CN102446682A - Ion implantation low-energy lens - Google Patents
Ion implantation low-energy lens Download PDFInfo
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- CN102446682A CN102446682A CN2010105135647A CN201010513564A CN102446682A CN 102446682 A CN102446682 A CN 102446682A CN 2010105135647 A CN2010105135647 A CN 2010105135647A CN 201010513564 A CN201010513564 A CN 201010513564A CN 102446682 A CN102446682 A CN 102446682A
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- electrode
- power supply
- focusing electrode
- connection device
- insulation power
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Abstract
The invention discloses an ion implantation low-energy lens which relates to an ion implanter and belongs to the field of semiconductor manufacturing. The structure of the ion implantation low-energy lens comprises an inlet electrode (1), an outlet electrode (2), a middle focusing electrode (3), an installing flange (4), two connecting bars (5) and an insulation power supply connection device (6), wherein the inlet electrode (1) and the outlet electrode (2) are respectively connected with one ends of the connecting bars (5), and the other ends of the connecting bars (5) are connected to the installing flange (4); the installing flange (4) is used for fixing the two connecting bars (5) and the insulation power supply connection device (6) and is positioned at a ground potential; the middle focusing electrode (3) is connected with the insulation power supply connection device (6) and is isolated from the inlet electrode (1) and the outlet electrode (2); one end of the insulation power supply connection device (6) is connected with the middle focusing electrode (3), and the other end of the insulation power supply connection device (6) is connected with an external power source so that the insulation power supply connection device (6) supplies power to the focusing electrode (3); and the end of the insulation power supply connection device (6), which is connected with the power source, is provided with two connectors which can be used for detecting a real power supply state. The inlet electrode (1), the outlet electrode (2) and the middle focusing electrode (3) jointly form a diaphragm lens structure, thereby realizing the first diffusion and later focusing of the ion beams in a low-energy manner and the total focusing effect.
Description
Technical field
The present invention is a kind of ion implantor light path devices, and particularly semiconductor is made used ion implantor in the ion implantation technology, belongs to field of manufacturing semiconductor devices.
Background technology
Ion implantor is a requisite process equipment during the modern semiconductors integrated circuit is made.Semiconductor integrated circuit manufacturing process now to ion implantor require increasingly high.Not only whole aircraft reliability, line degree of purity, beam homogeneity, implant angle etc. are had higher requirement; And the ion energy scope of implanter, bundle shape of spot, beam transmission efficient etc. have also been proposed very high requirement, and to its technology and equipment require increasingly high.Particularly strict more to the requirement of implanter light path system.
In order to improve the quality of implanter particle ion beam, reduce ion sputtering effectively and pollute, obtain stable high accuracy ion ion beam, the present invention adopts three diaphragm structures, and front and back are ground electrode, and the centre is the new design of focusing electrode.
Summary of the invention
Patent of the present invention is the focusing of ion beam to ion implantor under the low energy mode, improves the efficiency of transmission of ion beam.Ion beam gets into the low energy condenser lens through analyzing the light hurdle; Receive the electric field force effect between electrode and the middle focusing electrode previously and be tending towards dispersity; When the ion beam that disperses gets into the electric field field between middle focusing electrode and the back ground electrode, because the effect of electric field force is issued to the effect of focusing.
The present invention realizes through following technical approach:
A kind of ion injects the low energy lens and comprises: inlet electrode (1), exit electrodes (2), middle focusing electrode (3), mounting flange (4), two pitmans (5), insulation power supply connect (6).
Described inlet electrode (1), exit electrodes (2) are connected with an end of pitman (5) respectively, and the other end of pitman (5) is connected to mounting flange (4);
Described mounting flange (4) is used for fixing pitman (5) and is connected (6) with the insulation power supply, is in earth potential;
Focusing electrode (3) is connected (6) connection in the middle of described with insulation power supply, and insulate between the inlet electrode (1), exit electrodes (2);
Described two pitmans (5) are used for joint access electrode (1), exit electrodes (2) and mounting flange (4), inlet electrode (1) and exit electrodes (2) are communicated with earth potential, and be contact rod;
Described insulation power supply connects (6) one ends and connects middle focusing electrode (3), and the other end connects external power source, to focusing electrode (3) power supply, connects power end and has two connectors, can be used for detecting the actual power state.
The present invention has the following advantages:
Mounting structure is stable, reliable operation, and repeatability is high;
Focusing power is strong, and through the supply power voltage of focusing electrode in the middle of regulating, but better controlled is to the focusing effect of ion beam.
Description of drawings:
Description of drawings embodiment of the present invention.In the drawings, identical Reference numeral is represented identical parts.
Accompanying drawing 1 is the sketch map of one embodiment of the present invention
Embodiment:
Specific embodiment below in conjunction with accompanying drawing is done further introduction to the present invention, should be appreciated that, these descriptions all are illustrative, the invention is not restricted to this.Scope of the present invention is only limited the scope of accompanying claims.
One embodiment of the present invention are as shown in fig. 1.
A kind of ion injects the low energy lens shown in Fig. 1, comprising:
Inlet electrode (1), exit electrodes (2), middle focusing electrode (3), mounting flange (4), two pitmans (5), insulation power supply connect (6).Wherein said inlet electrode (1), exit electrodes (2) are connected with an end of pitman (5) respectively; Distance is between the two confirmed by the physical dimension of pitman (5); The other end of pitman (5) is connected to mounting flange (4); Inlet electrode (1), exit electrodes (2) are connected to earth potential, are conducting rods, can adopt electric conducting material making such as aluminium alloy; Described mounting flange (4) is used for fixing pitman (5) and is connected (6) with the insulation power supply, is in earth potential, also is with the interface of the implanter of whole low energy lens installation, generally is designed with the vacuum detecting interface, alignment pin etc.; Focusing electrode (3) is connected (6) and connects in the middle of described with insulation power supply, and insulation between the inlet electrode (1), exit electrodes (2), generally adopts high purity graphite to make, and reduces the sputter pollution, raising useful life; Described insulation power supply connects (6) one ends and connects middle focusing electrode (3); The other end connects external power source, to focusing electrode (3) power supply, connects power end and has two connectors; Can be used for detecting the actual power state; And mounting flange adopts insulating material between (4), and the design anti-pollution structure, improves insulation property and useful life.
Specific embodiment of the present invention elaborates content of the present invention.As far as persons skilled in the art, any conspicuous change of under the prerequisite that does not deviate from spirit of the present invention, it being done, perhaps the direct replacement of customary means all constitutes the infringement to patent of the present invention, with corresponding legal responsibilities.
Claims (4)
1. ion injection low energy lens comprise: inlet electrode (1), exit electrodes (2), middle focusing electrode (3), mounting flange (4), two pitmans (5), insulation power supply connect (6).Described inlet electrode (1), exit electrodes (2) are connected with an end of two pitmans (5) respectively, and the other end of two pitmans (5) is connected to mounting flange (4); Described mounting flange (4) is used for fixing pitman (5) and is connected (6) with the insulation power supply, is in earth potential; Focusing electrode (3) is connected (6) connection in the middle of described with insulation power supply, and insulate between the inlet electrode (1), exit electrodes (2); Described insulation power supply connects (6) one ends and connects middle focusing electrode (3), and the other end connects external power source, supplies power to focusing electrode (3);
2. a kind of ion as claimed in claim 1 injects the low energy lens, and it is characterized in that: focusing electrode (3) is positioned between inlet electrode (1) and the exit electrodes (2), and insulate with inlet electrode (1) and exit electrodes (2), forms the diaphragm lens arrangement;
3. a kind of ion as claimed in claim 1 injects the low energy lens, it is characterized in that: inlet electrode (1), exit electrodes (2), be connected respectively to an end of two pitmans (5), and the other end of two pitmans is connected to mounting flange (4), is grounded.
4. a kind of ion as claimed in claim 1 injects the low energy lens; It is characterized in that: middle focusing electrode (3) connects (6) through the insulation power supply and is communicated with power supply; Insulation power supply connects (6) and has two connectivity ports with power supply, can detect the power supply state of centre focusing electrode (3) in real time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105135647A CN102446682A (en) | 2010-10-13 | 2010-10-13 | Ion implantation low-energy lens |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105135647A CN102446682A (en) | 2010-10-13 | 2010-10-13 | Ion implantation low-energy lens |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102446682A true CN102446682A (en) | 2012-05-09 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105135647A Pending CN102446682A (en) | 2010-10-13 | 2010-10-13 | Ion implantation low-energy lens |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102446682A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040262542A1 (en) * | 2003-06-26 | 2004-12-30 | Axcelis Technologies, Inc. | Electrostatic lens for ion beams |
| US20050082497A1 (en) * | 2003-10-17 | 2005-04-21 | Applied Materials, Inc. | Ion implanter electrodes |
| CN101432841A (en) * | 2006-04-26 | 2009-05-13 | 艾克塞利斯科技公司 | Methods and systems for trapping ion beam particles and focusing an ion beam |
| US20090236547A1 (en) * | 2008-03-18 | 2009-09-24 | Axcelis Technologies, Inc. | Extraction electrode system for high current ion implanter |
-
2010
- 2010-10-13 CN CN2010105135647A patent/CN102446682A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040262542A1 (en) * | 2003-06-26 | 2004-12-30 | Axcelis Technologies, Inc. | Electrostatic lens for ion beams |
| US20050082497A1 (en) * | 2003-10-17 | 2005-04-21 | Applied Materials, Inc. | Ion implanter electrodes |
| CN101432841A (en) * | 2006-04-26 | 2009-05-13 | 艾克塞利斯科技公司 | Methods and systems for trapping ion beam particles and focusing an ion beam |
| US20090236547A1 (en) * | 2008-03-18 | 2009-09-24 | Axcelis Technologies, Inc. | Extraction electrode system for high current ion implanter |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| DD01 | Delivery of document by public notice |
Addressee: Zhongkexin Electronic Equipment Co., Ltd., Beijing Document name: Notification that Application Deemed to be Withdrawn |
|
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120509 |