CN102427039A - Photoresist removing method - Google Patents
Photoresist removing method Download PDFInfo
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- CN102427039A CN102427039A CN2011103419742A CN201110341974A CN102427039A CN 102427039 A CN102427039 A CN 102427039A CN 2011103419742 A CN2011103419742 A CN 2011103419742A CN 201110341974 A CN201110341974 A CN 201110341974A CN 102427039 A CN102427039 A CN 102427039A
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- Prior art keywords
- photoresist layer
- organic solvent
- photoresistance
- removal method
- layer
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000003960 organic solvent Substances 0.000 claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 238000001039 wet etching Methods 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims description 10
- RNIHKLMOEXFAAA-UHFFFAOYSA-N acetic acid;propane-1,1-diol Chemical class CC(O)=O.CCC(O)O RNIHKLMOEXFAAA-UHFFFAOYSA-N 0.000 claims description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 6
- OHEKCRCCSFMFHX-UHFFFAOYSA-N methoxymethane;propane-1,1-diol Chemical class COC.CCC(O)O OHEKCRCCSFMFHX-UHFFFAOYSA-N 0.000 claims description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 3
- 150000007530 organic bases Chemical class 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 abstract description 9
- 239000003990 capacitor Substances 0.000 abstract description 4
- 239000002184 metal Substances 0.000 description 11
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- Cleaning Or Drying Semiconductors (AREA)
Abstract
A photoresist removing method is applied to an MIM capacitor manufacturing process, and comprises the following steps: forming a photoresist layer on the surface of the wafer, and exposing and developing the wafer covered with the photoresist layer; when the photoresistance layer needs to be removed, at least one organic solvent is adopted to carry out wet etching on the photoresistance layer so as to remove the photoresistance layer on the surface of the wafer. The method for removing the light resistance changes the step of removing the light resistance by dry etching in the traditional process, avoids oxide which is not easy to etch on the surface of a product, and can effectively remove the light resistance, thereby improving the yield of the product.
Description
Technical field
The present invention relates to the electric capacity manufacturing process, and be particularly related to the photoresistance removal method in the electric capacity manufacturing process.
Background technology
Capacity cell be usually used in as in the integrated circuits such as radio frequency, monolithic microwave IC as electronic passive device.Common capacitance structure comprises like metal-oxide semiconductor (MOS) (MOS) electric capacity, PN junction electric capacity and metal-insulator-metal type (MIM) electric capacity etc.Wherein, Because mos capacitance and PN junction electric capacity all are subject to itself structure; When work, be prone to produce cavitation layer; Cause its frequency characteristic to reduce, and MIM electric capacity can provide characteristic such as frequency and temperature preferably, thereby MIM electric capacity can in some special applications, provide because the electrology characteristic of mos capacitance and PN junction electric capacity.In addition, MIM electric capacity can form in the metal interconnecting stage, had reduced degree of difficulty and the complexity integrated with the CMOS front-end process.
With reference to figure 1; Conventional mim capacitor structure can comprise at least: as the first metal layer 100 of lower electrode plate, as the insulation dielectric layer 300 at second metal level 200 of electric pole plate, middle institute interval, surface metal-layer 600, connect the through hole 500 of the first metal layer 100 and surface metal-layer 600 and second metal level 200 and surface metal-layer 600 and the passivation layer 400 between the metal level respectively.The size of MIM electric capacity depends primarily on the thickness of dielectric layer 300 and as the first metal layer 100 of battery lead plate and both corresponding areas of second metal level 200.In conventional manufacture craft, in order to form through hole 500, often form earlier photoresist layer on the surface of passivation layer 400, through etching photoresist layer and passivation layer 400 with formation through hole 500.
Manufacture craft about MIM electric capacity; Further referenced patent number is called the Chinese patent of " method that forms metal-insulator-metal capacitor " for ZL200310109109.0, name, wherein also mentions and uses reactive ion etching to remove dielectric medium under the via openings and the photoresist layer that is used to form through hole.
At present, in the process of making MIM electric capacity, when formed photoresist layer is removed, for example ought accomplish exposure and developed, perhaps when mistake having taken place in the technical process need do over again, adopt the method for dry etching usually at needs.Yet the inventor finds in long-term production is put into practice when the employing dry etching is removed photoresist layer, because easy with the surperficial metal of the oxygen in the dry etching; TiN for example; React, and then form the oxide that is difficult for etching, influence follow-up technology on the MIM capacitor surface; And general dry etching can't be removed the photoresist layer on surface clean usually, thereby has caused the decline of product yield.
Summary of the invention
The present invention proposes a kind of photoresistance removal method, has changed the step that the dry etching that is adopted in traditional MIM electric capacity manufacture craft is removed photoresistance, has improved the product yield.
In order to realize above-mentioned technical purpose, the present invention proposes a kind of photoresistance removal method, is applied to MIM electric capacity manufacture craft, and this photoresistance removal method comprises: form photoresist layer in wafer surface, and the wafer that covers photoresist layer is made public and develops; Adopt at least a organic solvent that said photoresist layer is carried out wet etching, to remove the photoresist layer of wafer surface.
Optional, at least a organic solvent of said employing carries out etching to photoresist layer and comprises and only adopt a kind of organic solvent that said photoresist layer is carried out etching, wherein, according to said photoresist said organic solvent is selected.
Optional, said organic solvent is that the different methyl ether-ether of different methyl ether propane diols and acetate propane diols is through the formed solvent of preset blending ratio ratio.
Optional; At least a organic solvent of said employing carries out etching to photoresist layer and comprises that two kinds of organic solvents of employing carry out wet etching to said photoresist layer successively; Wherein, at least a organic solvent is by different methyl ether propane diols and the formed solvent of the different methyl ether-ether process preset blending ratio ratio of acetate propane diols.
Optional, at least a organic solvent is the organic base solution of being made up of according to a certain ratio monoethanolamine etc.
Beneficial effect of the present invention is: changed the step of the dry etching removal photoresistance in the traditional handicraft, avoided product surface to form the oxide that is difficult for etching, can remove photoresistance more effectively in addition, thereby improve the product yield.
Description of drawings
Fig. 1 is the structural profile sketch map of conventional MIM electric capacity;
Fig. 2 is the schematic flow sheet of a kind of execution mode of photoresistance removal method of the present invention;
Fig. 3 is the schematic flow sheet of a step S12 shown in Figure 2 embodiment.
Embodiment
To combine specific embodiment and accompanying drawing below, photoresistance removal method of the present invention will be set forth in detail.
With reference to figure 2, a kind of embodiment of photoresistance removal method of the present invention is applied to MIM electric capacity manufacture craft, and the embodiment of this photoresistance removal method can may further comprise the steps:
Step S11 forms photoresist layer in wafer surface, and the wafer that covers photoresist layer is made public and develops;
Step S12 when needs are removed formed photoresist layer, adopts at least a organic solvent that said photoresist layer is carried out wet etching, to remove the photoresist layer of wafer surface.
Wherein, step S11 can adopt existing process steps and parameter, and its practical implementation process does not constitute influence to thinking of the present invention.
Wherein, Step S12 can comprise and adopts a kind of organic solvent that said photoresistance is removed; The organic solvent that is adopted can be selected according to the material of said photoresistance, for example, can adopt the different methyl ether-ether of different methyl ether propane diols and acetate propane diols through the formed solvent of preset blending ratio ratio.
In other embodiments, step S12 also can comprise and adopts different organic solvents successively said photoresist layer to be removed.For example, with reference to figure 3, step S12 can comprise: step S210, adopt first organic solvent that said photoresist layer is removed earlier; Step S220 adopts second organic solvent that the residual photoresistor layer is proceeded to remove again.Wherein, Said first organic solvent can be according to the selected organic solvent of said photoresistance; For example can adopt the different methyl ether-ether of different methyl ether propane diols and acetate propane diols through the formed solvent of preset blending ratio ratio; Second organic solvent can be the organic base solution of being made up of according to a certain ratio monoethanolamine etc., thereby can the said photoresist layer of more effective removal.In addition, step S12 also can comprise and adopts two or more organic solvents successively said photoresist layer to be removed, thereby reach more effective photoresistance removal effect.
In above-mentioned each embodiment, the inventor adopts wet etching that the photoresist layer of wafer surface is removed through choosing appropriate organic solvent; Changed the conventional dry etching that adopts in the traditional handicraft; Because selected organic solvent only reacts with photoresist, not only avoided forming the oxide that influences subsequent technique and be difficult for etching in wafer surface, and with respect to dry etching; Can remove photoresistance more effectively up hill and dale, improve the product yield.
In addition, photoresistance removal method of the present invention can effectively utilize existing processes equipment, thereby saves production cost, enhances productivity.
Those skilled in the art will be understood that; In above-mentioned each execution mode; For example deposit, make public, the concrete realization and the step of technology such as development, etching do not cause restriction to the inventive concept of photoresistance removal method of the present invention, can adopt in above-mentioned each processing step but be not limited to existing conventional technological parameter, raw material and equipment.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can utilize the method and the technology contents of above-mentioned announcement that technical scheme of the present invention is made possible change and modification, therefore, every content that does not break away from technical scheme of the present invention; To any simple modification, equivalent variations and modification that above embodiment did, all belong to the protection range of technical scheme of the present invention according to technical spirit of the present invention.
Claims (5)
1. a photoresistance removal method is applied to MIM electric capacity manufacture craft, it is characterized in that, said photoresistance removal method comprises:
Form photoresist layer in wafer surface, and the wafer that covers photoresist layer is made public and develops;
Adopt at least a organic solvent that said photoresist layer is carried out wet etching, to remove the photoresist layer of wafer surface.
2. photoresistance removal method as claimed in claim 1; It is characterized in that; At least a organic solvent of said employing carries out wet etching to photoresist layer and comprises and only adopt a kind of organic solvent that said photoresist layer is carried out etching, wherein, according to said photoresist said organic solvent is selected.
3. photoresistance removal method as claimed in claim 2 is characterized in that, said organic solvent is that the different methyl ether-ether of different methyl ether propane diols and acetate propane diols is through the formed solvent of preset blending ratio ratio.
4. photoresistance removal method as claimed in claim 1; It is characterized in that; At least a organic solvent of said employing carries out wet etching to photoresist layer; Comprise and adopt two kinds of organic solvents successively said photoresist layer to be carried out etching that wherein, at least a organic solvent is by different methyl ether propane diols and the formed solvent of the different methyl ether-ether process preset blending ratio ratio of acetate propane diols.
5. photoresistance removal method as claimed in claim 4 is characterized in that, at least a organic solvent is the organic base solution of being made up of according to a certain ratio monoethanolamine etc.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103419742A CN102427039A (en) | 2011-11-02 | 2011-11-02 | Photoresist removing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103419742A CN102427039A (en) | 2011-11-02 | 2011-11-02 | Photoresist removing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102427039A true CN102427039A (en) | 2012-04-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103419742A Pending CN102427039A (en) | 2011-11-02 | 2011-11-02 | Photoresist removing method |
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|---|---|
| CN (1) | CN102427039A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1308737A (en) * | 1998-07-10 | 2001-08-15 | 克拉里安特国际有限公司 | Composition for stripping photoresist and organic material from substrate surfaces |
| US20030124747A1 (en) * | 2001-12-28 | 2003-07-03 | Kee-Joon Oh | Method for forming ruthenium storage node of semiconductor device |
| CN1650235A (en) * | 2002-04-26 | 2005-08-03 | 东京应化工业株式会社 | Method for removing photoresist |
| CN1722002A (en) * | 2004-07-13 | 2006-01-18 | 鸿富锦精密工业（深圳）有限公司 | Photoresistance is peeled off processing procedure and optical resistance-stripping device |
| KR100638984B1 (en) * | 2004-12-15 | 2006-10-26 | 동부일렉트로닉스 주식회사 | Method of fabricating metal-insulator-metal capacitor |
| CN102200700A (en) * | 2011-06-08 | 2011-09-28 | 绵阳艾萨斯电子材料有限公司 | Stripping liquid as well as preparation method and application |
-
2011
- 2011-11-02 CN CN2011103419742A patent/CN102427039A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1308737A (en) * | 1998-07-10 | 2001-08-15 | 克拉里安特国际有限公司 | Composition for stripping photoresist and organic material from substrate surfaces |
| US20030124747A1 (en) * | 2001-12-28 | 2003-07-03 | Kee-Joon Oh | Method for forming ruthenium storage node of semiconductor device |
| CN1650235A (en) * | 2002-04-26 | 2005-08-03 | 东京应化工业株式会社 | Method for removing photoresist |
| CN1722002A (en) * | 2004-07-13 | 2006-01-18 | 鸿富锦精密工业（深圳）有限公司 | Photoresistance is peeled off processing procedure and optical resistance-stripping device |
| KR100638984B1 (en) * | 2004-12-15 | 2006-10-26 | 동부일렉트로닉스 주식회사 | Method of fabricating metal-insulator-metal capacitor |
| CN102200700A (en) * | 2011-06-08 | 2011-09-28 | 绵阳艾萨斯电子材料有限公司 | Stripping liquid as well as preparation method and application |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140507 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20140507 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120425 |
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| WD01 | Invention patent application deemed withdrawn after publication |