CN102412361A - Laminated heat dissipation substrate and electronic assembly structure using same - Google Patents
Laminated heat dissipation substrate and electronic assembly structure using same Download PDFInfo
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- CN102412361A CN102412361A CN2011101269562A CN201110126956A CN102412361A CN 102412361 A CN102412361 A CN 102412361A CN 2011101269562 A CN2011101269562 A CN 2011101269562A CN 201110126956 A CN201110126956 A CN 201110126956A CN 102412361 A CN102412361 A CN 102412361A
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- 239000000758 substrate Substances 0.000 title claims abstract description 80
- 230000017525 heat dissipation Effects 0.000 title abstract 4
- 239000010410 layer Substances 0.000 claims description 141
- 230000004888 barrier function Effects 0.000 claims description 49
- 229920005989 resin Polymers 0.000 claims description 42
- 239000011347 resin Substances 0.000 claims description 42
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 28
- 239000011241 protective layer Substances 0.000 claims description 26
- 239000010949 copper Substances 0.000 claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 20
- 229910052802 copper Inorganic materials 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 229910052759 nickel Inorganic materials 0.000 claims description 14
- 239000011469 building brick Substances 0.000 claims description 13
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 12
- 230000004308 accommodation Effects 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 11
- -1 silanes organic compound Chemical class 0.000 claims description 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 10
- 229910052804 chromium Inorganic materials 0.000 claims description 10
- 239000011651 chromium Substances 0.000 claims description 10
- 229910017052 cobalt Inorganic materials 0.000 claims description 10
- 239000010941 cobalt Substances 0.000 claims description 10
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 10
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- 239000011733 molybdenum Substances 0.000 claims description 10
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- 150000002894 organic compounds Chemical class 0.000 claims description 8
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- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 7
- 239000003822 epoxy resin Substances 0.000 claims description 7
- 229920000647 polyepoxide Polymers 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 239000011135 tin Substances 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 7
- 239000004925 Acrylic resin Substances 0.000 claims description 6
- 229920000178 Acrylic resin Polymers 0.000 claims description 6
- 239000004952 Polyamide Substances 0.000 claims description 6
- 239000004695 Polyether sulfone Substances 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 239000005011 phenolic resin Substances 0.000 claims description 6
- 229920001568 phenolic resin Polymers 0.000 claims description 6
- 125000001997 phenyl group Chemical class [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229920001643 poly(ether ketone) Polymers 0.000 claims description 6
- 229920002647 polyamide Polymers 0.000 claims description 6
- 229920006393 polyether sulfone Polymers 0.000 claims description 6
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 239000009719 polyimide resin Substances 0.000 claims description 6
- 229920005749 polyurethane resin Polymers 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 229920006337 unsaturated polyester resin Polymers 0.000 claims description 6
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 5
- 239000004962 Polyamide-imide Substances 0.000 claims description 5
- KYTZHLUVELPASH-UHFFFAOYSA-N naphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 KYTZHLUVELPASH-UHFFFAOYSA-N 0.000 claims description 5
- 229920002312 polyamide-imide Polymers 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical group [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 4
- 239000011229 interlayer Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052717 sulfur Chemical group 0.000 claims description 4
- 239000011593 sulfur Chemical group 0.000 claims description 4
- 229910000531 Co alloy Inorganic materials 0.000 claims description 3
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
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- 239000000853 adhesive Substances 0.000 description 11
- 230000001070 adhesive effect Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
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- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
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- 230000000007 visual effect Effects 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Laminated Bodies (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a laminated heat dissipation substrate and an electronic assembly structure using the same. The laminated heat dissipation substrate includes a substrate, a laminated bonding layer, an insulating layer, and a conductive layer. The laminated bonding layer is arranged on the substrate and at least comprises a first bonding layer and a second bonding layer. The first bonding layer is disposed on the substrate. The second bonding layer is disposed on the first bonding layer. The insulating layer is disposed on the laminated bonding layer. The conductive layer is disposed on the insulating layer. The electronic assembly structure comprises the laminated heat dissipation substrate and an electronic assembly. The insulating layer and the conductive layer further enclose an accommodating space on the laminated bonding layer, and the accommodating space exposes the laminated bonding layer. The electronic assembly is arranged in the accommodating space and on the laminated bonding layer and is electrically connected with the conductive layer. The electronic component is preferably a light emitting diode.
Description
Technical field
The invention relates to a kind of range upon range of heat-radiating substrate, the sub-component of can supplying power uses.Particularly, the invention relates to a kind of range upon range of heat-radiating substrate that supplies light-emitting diode to use.
Background technology
Along with the development of High Power LED (LED) technology, its luminous efficiency is promoted to more than 160 ~ 170lm/W gradually in recent years.Yet, its electro-optical efficiency only about 40 ~ 50%.In other words, still have exhausted major part to convert heat energy in the electric energy of its input, these heat energy will cause chip temperature to rise, and then influence luminous intensity and life-span if can not be directed at external environment fast.Therefore, the heat management problems of high-capacity LED product more and more comes into one's own.
In the LED product, printed circuit board (PCB) is indispensable part, provides electronic building brick to install and interconnected prop carrier, wherein is again main material with the heat-radiating substrate.General industry the most often uses metal substrate as heat-radiating substrate, and shown in Figure 1A, existing electronics package assembly 90 comprises aluminum metal substrate 10, insulating barrier 50 and conductive layer 70.The maximum heat radiation bottleneck of this type substrate promptly is the insulating barrier 50 between conductive layer 70 and aluminum metal substrate 10.Insulating barrier 50 uses epoxy resin as main material mostly, but on the low side because of its coefficient of heat conduction, must add heat filling separately, like fillers such as aluminium oxide, aluminium nitride and boron nitride, improves the coefficient of heat conduction of this layer, and then reduces the thermal impedance of this substrate.Even so, the coefficient of heat conduction of insulating barrier 50 is still far below metal material, so still be the main bottleneck of heat radiation.On the other hand, shown in Figure 1B, in different embodiment, the aluminum metal substrate 10 and 50 of the insulating barriers of existing electronics package assembly 90 have the demand that copper containing layer 33 is set.Yet copper containing layer 33 is not good with the adhesion of aluminum metal substrate 10, is prone to make copper containing layer 33 to peel off from aluminum metal substrate 10.
Summary of the invention
Main purpose of the present invention has preferable adhesive force of metal layer for a kind of range upon range of heat-radiating substrate is provided.
Another object of the present invention has thin thickness for a kind of range upon range of heat-radiating substrate is provided.
Another object of the present invention has preferable heat-sinking capability for a kind of electronics package assembly is provided.
Range upon range of heat-radiating substrate of the present invention comprises substrate, range upon range of key knot layer, insulating barrier and conductive layer.Range upon range of key knot layer is arranged on the substrate, comprises first key knot layer and second key knot layer at least.First key knot layer is arranged on the substrate.Second key knot layer is arranged on first key knot layer.Insulating barrier is arranged on the range upon range of key knot layer.Conductive layer is arranged on the insulating barrier.
Substrate comprises aluminum or aluminum alloy or copper or copper alloy.Second key knot layer is copper or copper alloy.Range upon range of key knot layer further comprises triple bond knot layer, is arranged at first key knot layer and second key knot interlayer, and wherein triple bond knot layer comprises metal, metal alloy or pottery.In preferred embodiment, first key knot layer contains zinc.The nickel content of triple bond knot layer is between 90% to 100%, and phosphorus content is between 0 to 10%.Range upon range of key knot layer further comprises protective layer, is arranged under the insulating barrier, and protective layer comprises metal, metal alloy, metal oxide or organic compound.Protective layer can be Cu oxide or chromated oxide; Or can be nitrogenous, as to contain oxygen, phosphorous or sulfur-bearing organic compound; Also can be the silanes organic compound, or also can be nickel, cobalt, zinc, chromium, molybdenum, copper, nickel alloy, cobalt alloy, kirsite, evanohm, molybdenum alloy, copper alloy or its mixture.
The material of insulating barrier is included as polyimide resin, polyamide-imide resin, gathers the naphthalenedicarboxylic acid resin, epoxy resin, acrylic resin, amido formate are resin, organic siliconresin, gather ring diformazan benzene series resin, BMI is resin, polyether ketone resin, unsaturated polyester resin, polyamide, polyurethane resin, phenolic resins, polyethersulfone resin, PETG or its mixture.Conductive layer is to be selected from tin, nickel, silver, copper, gold, palladium, cobalt, chromium, titanium, platinum, tantalum, tungsten and molybdenum.
In different embodiment, range upon range of heat-radiating substrate further can comprise the toss about insulating barrier and the conductive layer of tossing about.The insulating barrier of tossing about is arranged at the side in addition of the range upon range of relatively key knot of substrate layer.The conductive layer of tossing about is arranged at the side in addition of the relative substrate of insulating barrier of tossing about.Range upon range of heat-radiating substrate can further comprise a plurality of holes and run through the toss about insulating barrier and the conductive layer of tossing about.It is resin, organic siliconresin that the material of insulating barrier of tossing about is included as polyimide resin, epoxy resin, acrylic resin, amido formate, gather ring diformazan benzene series resin, BMI is resin, polyether ketone resin, unsaturated polyester resin, polyamide, polyurethane resin, phenolic resins, polyethersulfone resin, PETG or its mixture.The conductive layer of tossing about is to be selected from tin, nickel, silver, copper, gold, palladium, cobalt, chromium, titanium, platinum, tantalum, tungsten and molybdenum.
Electronics package assembly of the present invention comprises aforementioned range upon range of heat-radiating substrate and electronic building brick.Wherein, insulating barrier and conductive layer further cross accommodation space on range upon range of key knot layer, and accommodation space exposes range upon range of key knot layer.Electronic building brick is arranged in the accommodation space and range upon range of key is tied on the layer, and is electrically connected with conductive layer.Electronic building brick is preferably light-emitting diode.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention; Understand technological means of the present invention in order can more to know; And can implement according to the content of specification, and for let above and other objects of the present invention, feature and advantage can be more obviously understandable, below special act preferred embodiment; And conjunction with figs., specify as follows.
Description of drawings
Figure 1A and 1B are the prior art sketch map;
Fig. 2,3A, 3B, 4,5A, 5B and 6A are the different embodiments of the invention sketch map;
Fig. 6 B is a preferred embodiment sketch map of the present invention; And
Fig. 6 C, 7A and 7B are the different embodiments of the invention sketch map.
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention; Below in conjunction with accompanying drawing and preferred embodiment; To range upon range of heat-radiating substrate that proposes according to the present invention and its embodiment of electronics package assembly, structure, characteristic and the effect thereof of using this range upon range of heat-radiating substrate, specify as after.
Embodiment as shown in Figure 2, range upon range of heat-radiating substrate 800 of the present invention comprise substrate 100, range upon range of key knot layer 300, insulating barrier 500 and conductive layer 700.Particularly, substrate 100 is preferably and uses metal or alloy to process, because this type of material is with good thermal conductivity, so can further promote the radiating effect of heat-radiating substrate 800 integral body.Wherein, because the aluminium quality is light, price is lower and have good thermal conductivity, so in preferred embodiment, substrate 100 is to use aluminum or aluminum alloy to process.
Range upon range of key knot layer 300 is arranged on the substrate 100, comprises first key knot layer, 310 and second key knot layer 320 at least.First key knot layer 310 is arranged on the substrate 100, and is preferable but do not limit and contain zinc.Second key knot layer 320 is arranged on first key knot layer 310.Second key knot layer 320 is copper or copper alloy.Wherein, second key knot layer 320 is lower with the adhesive force of the substrate 100 that uses aluminum or aluminum alloy to process, and first key knot layer 310 then has good adhesive force with substrate 100.
Range upon range of key knot layer 300 further comprises triple bond knot layer 330, is arranged at 320 on first key knot layer, 310 and second key knot layer, and wherein triple bond knot layer 330 comprises metal, metal alloy or pottery.Metal is selected from tin, nickel, silver, copper, gold, palladium, cobalt, chromium, titanium, platinum, tantalum, tungsten and molybdenum.In preferred embodiment, triple bond knot layer 330 is nickel alloys, and nickel content is between 90% to 100%, and phosphorus content is between 0 to 10%.Wherein, triple bond knot layer 330 and first key tied layer 310 and all had good adhesive force with second key knot layer 320.Furthermore, triple bond knot layer 330 respectively and first key knot layer 310 and and the adhesive force of 320 on second key knot layer preferable, greater than first key knot layer 310 and and the adhesive force of 320 on second key knot layer.Therefore, second key knot layer 320 can be by triple bond knot layer 330 more well attached on first key knot layer 310.
Comprehensive speech; Embodiment shown in Fig. 3 A; Range upon range of key knot layer 300 is except comprising first key knot layer, 310 and second key knot layer 320; Can further comprise a plurality of key knot layers and be laminated in 320 on first key knot layer, 310 and second key knot layer in regular turn, each adjacent key knot layer has good adhesive force to each other.By this, even it is not good with the adhesive force of substrate 100 to be laminated in the key knot layer of the superiors, the key knot layer that is located in therebetween still capable of using is attached on the substrate 100 well.Wherein, each key knot layer can be selected identical or different material for use, also is that available identical or different material stacks gradually out adjacent key knot layer.On the other hand, can be in the middle of the processing procedure by control formation condition for example ratio, temperature, time etc., order uses the different keys knot layers of same material to have different physics, chemical property.
Insulating barrier 500 is arranged on the range upon range of key knot layer 300.Conductive layer 700 is arranged on the insulating barrier 500.Wherein, the material of insulating barrier is included as polyimide resin, polyamide-imide resin, gathers the naphthalenedicarboxylic acid resin, epoxy resin, acrylic resin, amido formate is resin, organic siliconresin, gather ring diformazan benzene series resin, BMI is resin, polyether ketone resin, unsaturated polyester resin, polyamide, polyurethane resin, phenolic resins, polyethersulfone resin, PETG or its mixture.Conductive layer is to be selected from tin, nickel, silver, copper, gold, palladium, cobalt, chromium, titanium, platinum, tantalum, tungsten and molybdenum.
Different embodiment shown in Fig. 3 B, range upon range of key knot layer 300 further comprises protective layer 333, is arranged at 500 of second key knot layer 320 and insulating barriers.In other words, protective layer 333 is the superiors of a plurality of keys knot layers of comprising of range upon range of key knot layer 300.Protective layer 333 comprises metal, metal alloy, metal oxide or organic compound.Second key knot layer 320 is a copper in this embodiment, and protective layer 333 is Cu oxides.Insulating barrier 500 that protective layer 333 is not only upper and lower with it respectively and second key knot layer 320 have good adhesive force, more can have the anti-welding protection effect that waits.Yet in other different embodiment; Second key knot layer 320 can be copper alloy, and protective layer 333 (for example: chromated oxide), the mixture of itself or its alloy of organic compound (for example: nitrogenous, as to contain oxygen, phosphorous or sulfur-bearing organic compound or silanes organic compound), one or more metals (like nickel, cobalt, zinc, chromium, molybdenum, copper) can be other metal oxide.Wherein, protective layer 333 further can the overlapped way setting, and is above-mentioned combination in any.
As shown in Figure 4, in different embodiment, range upon range of heat-radiating substrate 800 further can comprise the toss about insulating barrier 550 and the conductive layer 770 of tossing about.The insulating barrier 550 of tossing about is arranged at the side in addition of the range upon range of relatively key knot of substrate 100 layer 300.The conductive layer 770 of tossing about is arranged at the side in addition of the insulating barrier 550 relative substrates 100 of tossing about.The material of insulating barrier 550 of tossing about is included as polyimide resin, polyamide-imide resin, gathers the naphthalenedicarboxylic acid resin, epoxy resin, acrylic resin, amido formate are resin, organic siliconresin, gather ring diformazan benzene series resin, BMI is resin, polyether ketone resin, unsaturated polyester resin, polyamide, polyurethane resin, phenolic resins, polyethersulfone resin, PETG or its mixture.The conductive layer 770 of tossing about is to be selected from tin, nickel, silver, copper, gold, palladium, cobalt, chromium, titanium, platinum, tantalum, tungsten and molybdenum.
Among the different embodiment as shown in Figure 4, range upon range of heat-radiating substrate 800 can further comprise a plurality of holes 400 and run through the toss about insulating barrier 550 and the conductive layer 770 of tossing about.In different embodiment, can be filled with Heat Conduction Material (not illustrating) in a plurality of holes 400.Wherein, the position of hole 400, quantity, internal diameter or distribution mode etc. can change according to design requirement.The coefficient of heat conduction of Heat Conduction Material is preferably greater than 10W/mK, comprises metal, alloy, pottery, metal or pottery-polymer composite, thermal conductive silicon resin or its mixture.Wherein, metal can be silver, copper, aluminium, nickel or iron, and alloy can be leypewter, tin pb-ag alloy or SAC alloy.Pottery can be aluminium oxide, boron nitride, aluminium nitride, carborundum, carbon nanotube or graphite etc.Heat Conduction Material is filled in visual its changes in material properties of mode of hole 400; For example can when thermal conductive silicon resin heat conduction thing is flow regime, it be poured into hole 400; Or the plating of metal heat-conducting thing is formed in the hole 400, or solid metallic-polymer composite heat conduction thing is pressed into hole 400 with mechanical force.Wherein, the heat conduction thing is not limited to fill up hole 400, and mode that also can coverage hole 400 sidewalls is provided with.In different embodiment, electronic building brick (not illustrating) can be set also in a plurality of holes 400.
Embodiment shown in Fig. 5 A, electronics package assembly 900 of the present invention comprises aforementioned range upon range of heat-radiating substrate 800 and electronic building brick 200.Wherein, insulating barrier 500 and conductive layer 700 further cross accommodation space 600 on range upon range of key knot layer 300, and accommodation space 600 exposes range upon range of key knot layer 300.In preferred embodiment, be that range upon range of heat-radiating substrate 800 shown in Figure 2 is removed the insulating barrier 500 and the conductive layer 700 of specific region with physics or chemical mode etching, to form accommodation space 600.Shown in Fig. 5 A, electronic building brick 200 is arranged in the accommodation space 600 and range upon range of key is tied on the layer 300, and is electrically connected with conductive layer 700.Wherein, ways of connecting is preferably and uses lead 222.Electronic building brick 200 is preferably light-emitting diode, also is that electronics package assembly 900 is preferably and is used for light emitting diode illuminating apparatus.Yet in different embodiment, electronics package assembly 900 can be used for other electronic installation.Particularly, in electronics package assembly 900 of the present invention, 100 of electronic building brick 200 and substrates do not have insulating barrier 500, and integral thickness is reduced.On the other hand, the heat that produces during electronic building brick 200 runnings can more directly be sent to substrate 100 heat radiations, can promote radiating efficiency.
Different embodiment shown in Fig. 5 B, 320 on second key knot layer of electronic building brick 200 and range upon range of key knot layer 300, second key knot layer 320 and 330 on triple bond knot layer, 310 on triple bond knot layer 330 and first key knot layer, first key knot layer 310 and 100 of substrates have good adhesive force respectively.Therefore, even electronic building brick 200 adhesive force direct and substrate 100 are not good, first key knot layer 310, triple bond knot layer 330 and second key that is located in therebetween still capable of using tied layer 320 and is attached to well on the substrate 100.
In the embodiment shown in Fig. 6 A to Fig. 6 C, wherein, protective layer 333 optionally keeps (like Fig. 6 A) or removes (like Fig. 6 B) in processing procedure.In other words, protective layer 333 can be arranged at insulating barrier 500 times and be exposed to accommodation space 600 keeping in the processing procedure simultaneously shown in Fig. 6 A, or can shown in Fig. 6 B, only be arranged at insulating barrier 500 times removing in the processing procedure.On the other hand, insulating barrier 500 can be further with the overlapped way setting.For example in the embodiment shown in Fig. 6 C, insulating barrier 500 comprises first insulating barrier 510 and second insulating barrier 520.So can increase then effect by this.Furthermore, shown in Fig. 7 A and Fig. 7 B, insulating barrier 500 and conductive layer 700 also can range upon range ofly be provided with.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction; Though the present invention discloses as above with preferred embodiment; Yet be not in order to limiting the present invention, anyly be familiar with the professional and technical personnel, in not breaking away from technical scheme scope of the present invention; When the technology contents of above-mentioned announcement capable of using is made a little change or is modified to the equivalent embodiment of equivalent variations; In every case be not break away from technical scheme content of the present invention, to any simple modification, equivalent variations and modification that above embodiment did, all still belong in the scope of technical scheme of the present invention according to technical spirit of the present invention.
Claims (27)
1. a range upon range of heat-radiating substrate is characterized in that, comprises:
One substrate;
One range upon range of key knot layer is arranged on this substrate, comprises at least:
One first key knot layer is arranged on this substrate; And
One second key knot layer is arranged on this first key knot layer;
One insulating barrier is arranged on this range upon range of key knot layer; And
One conductive layer is arranged on this insulating barrier.
2. range upon range of heat-radiating substrate as claimed in claim 1 is characterized in that, this first key knot layer contains zinc.
3. range upon range of heat-radiating substrate as claimed in claim 1 is characterized in that, this substrate comprises aluminum or aluminum alloy or copper or copper alloy.
4. range upon range of heat-radiating substrate as claimed in claim 1 is characterized in that, this second key knot layer is copper or copper alloy.
5. range upon range of heat-radiating substrate as claimed in claim 1 is characterized in that, this range upon range of key knot layer further comprises triple bond knot layer, is arranged at this first key knot layer and this second key knot interlayer, and wherein this triple bond knot layer comprises metal, metal alloy or pottery.
6. range upon range of heat-radiating substrate as claimed in claim 5 is characterized in that, this triple bond knot layer is a nickel alloy, and nickel content is between 90% to 100%, and phosphorus content is between 0 to 10%.
7. range upon range of heat-radiating substrate as claimed in claim 1 is characterized in that, this range upon range of key knot layer further comprises a protective layer, is arranged under this insulating barrier, and this protective layer comprises metal, metal alloy, metal oxide or organic compound.
8. range upon range of heat-radiating substrate as claimed in claim 7 is characterized in that, this protective layer is Cu oxide or chromated oxide.
9. range upon range of heat-radiating substrate as claimed in claim 7 is characterized in that, this protective layer is an organic compound nitrogenous, that contain oxygen, phosphorous or sulfur-bearing.
10. range upon range of heat-radiating substrate as claimed in claim 7 is characterized in that, this protective layer is the silanes organic compound.
11. range upon range of heat-radiating substrate as claimed in claim 7 is characterized in that, the material of this protective layer is included as nickel, cobalt, zinc, chromium, molybdenum, copper, nickel alloy, cobalt alloy, kirsite, evanohm, molybdenum alloy, copper alloy or its mixture.
12. range upon range of heat-radiating substrate as claimed in claim 1; It is characterized in that the material of this insulating barrier is included as polyimide resin, polyamide-imide resin, gathers the naphthalenedicarboxylic acid resin, epoxy resin, acrylic resin, amido formate are resin, organic siliconresin, gather ring diformazan benzene series resin, BMI is resin, polyether ketone resin, unsaturated polyester resin, polyamide, polyurethane resin, phenolic resins, polyethersulfone resin, PETG or its mixture.
13. range upon range of heat-radiating substrate as claimed in claim 1 is characterized in that, this conductive layer is to be selected from tin, nickel, silver, copper, gold, palladium, cobalt, chromium, titanium, platinum, tantalum, tungsten and molybdenum.
14. range upon range of heat-radiating substrate as claimed in claim 1 is characterized in that, further comprises:
One insulating barrier of tossing about, other side that is arranged at that this substrate relatively should range upon range of key knot layer; And
One conductive layer of tossing about is arranged at this insulating barrier side in addition of this substrate relatively of tossing about.
15. range upon range of heat-radiating substrate as claimed in claim 14 is characterized in that, further comprises a plurality of holes and runs through this toss about insulating barrier and this conductive layer of tossing about.
16. range upon range of heat-radiating substrate as claimed in claim 14; It is characterized in that the material of this insulating barrier of tossing about is included as polyimide resin, polyamide-imide resin, gathers the naphthalenedicarboxylic acid resin, epoxy resin, acrylic resin, amido formate are resin, organic siliconresin, gather ring diformazan benzene series resin, BMI is resin, polyether ketone resin, unsaturated polyester resin, polyamide, polyurethane resin, phenolic resins, polyethersulfone resin, PETG or its mixture.
17. an electronics package assembly is characterized in that, comprises:
Range upon range of heat-radiating substrate as claimed in claim 1, wherein this insulating barrier and this conductive layer further cross an accommodation space on this range upon range of key knot layer, and this accommodation space exposes this range upon range of key knot layer; And
One electronic building brick is arranged in this accommodation space and this range upon range of key is tied on the layer, and is electrically connected with this conductive layer.
18. electronics package assembly as claimed in claim 17 is characterized in that, this range upon range of key knot layer further comprises triple bond knot layer, is arranged at this first key knot layer and this second key knot interlayer.
19. electronics package assembly as claimed in claim 17 is characterized in that, this range upon range of key knot layer further comprises triple bond knot layer in this accommodation space, be arranged at this first key knot layer and this second key knot interlayer.
20. electronics package assembly as claimed in claim 17 is characterized in that, this insulating barrier is to be provided with range upon range of or individual layer mode.
21. electronics package assembly as claimed in claim 17 is characterized in that, this range upon range of key knot layer further comprises a protective layer, and this protective layer comprises metal, metal alloy, metal oxide or organic compound.
22. electronics package assembly as claimed in claim 17 is characterized in that, this range upon range of key knot layer further comprises a protective layer, is arranged under this insulating barrier, and this protective layer comprises metal, metal alloy, metal oxide or organic compound.
23. electronics package assembly as claimed in claim 22 is characterized in that, this protective layer is Cu oxide or chromated oxide.
24. electronics package assembly as claimed in claim 22 is characterized in that, this protective layer is an organic compound nitrogenous, that contain oxygen, phosphorous or sulfur-bearing.
25. electronics package assembly as claimed in claim 22 is characterized in that, this protective layer is the silanes organic compound.
26. electronics package assembly as claimed in claim 22 is characterized in that, the material of this protective layer is included as nickel, cobalt, zinc, chromium, molybdenum, copper, nickel alloy, cobalt alloy, kirsite, evanohm, molybdenum alloy, copper alloy or its mixture.
27. electronics package assembly as claimed in claim 17 is characterized in that, the range upon range of setting of insulating barrier and conductive layer.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
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| TW99131992 | 2010-09-21 | ||
| TW099131992 | 2010-09-21 | ||
| TW100110313 | 2011-03-25 | ||
| TW100110313A TWI481085B (en) | 2010-09-21 | 2011-03-25 | A laminated heat dissipating plate and an electronic assembly structure using the same |
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| CN102412361A true CN102412361A (en) | 2012-04-11 |
| CN102412361B CN102412361B (en) | 2016-06-08 |
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| CN201110126956.2A Active CN102412361B (en) | 2010-09-21 | 2011-05-17 | Laminated heat dissipation substrate and electronic assembly structure using same |
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| JP (1) | JP2012066583A (en) |
| KR (1) | KR101260179B1 (en) |
| CN (1) | CN102412361B (en) |
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| CN105047790A (en) * | 2015-08-14 | 2015-11-11 | 何蓓 | Practical high-power LED encapsulation structure |
| CN105489747A (en) * | 2015-12-31 | 2016-04-13 | 乐健科技（珠海）有限公司 | High-thermal conductivity metal substrate and fabrication method thereof, LED module and fabrication method of LED module |
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| CN103951469B (en) * | 2014-04-02 | 2015-06-24 | 西安理工大学 | Preparation method of metal ceramic composite heat radiation material |
| KR20210016231A (en) * | 2019-08-02 | 2021-02-15 | 삼성디스플레이 주식회사 | Panel bottom sheet and display including the same |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN102412361B (en) | 2016-06-08 |
| JP2012066583A (en) | 2012-04-05 |
| KR20120030928A (en) | 2012-03-29 |
| KR101260179B1 (en) | 2013-05-06 |
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