CN102419425A - Magnetoresistance automatic measuring device and measuring method for the same - Google Patents
Magnetoresistance automatic measuring device and measuring method for the same Download PDFInfo
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- CN102419425A CN102419425A CN2011102665415A CN201110266541A CN102419425A CN 102419425 A CN102419425 A CN 102419425A CN 2011102665415 A CN2011102665415 A CN 2011102665415A CN 201110266541 A CN201110266541 A CN 201110266541A CN 102419425 A CN102419425 A CN 102419425A
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Abstract
The invention discloses a magnetoresistance automatic measuring device and a measuring method for the same. The device comprises a magnetoresistance measuring unit, a magnetic field generation unit, a sample moving unit and a control unit. The method comprises the following steps of: firstly, a to-be-measured magnetoresistance sample is placed in the magnetic field generation unit through an opening, then, the control unit sends a measurement control signal, after receiving the measurement control unit, the magnetoresistance measuring unit connects to any magnetoresistance chip in the to-be-measured magnetoresistance sample; then, the control unit controls the magnetic field generation unit to generate corresponding measurement magnetic field according to the preset measurement requirement needed for the to-be-measured magnetoresistance chip; the magnetoresistance measuring unit sets a corresponding current signal according to the measurement requirement needed for the to-be-measured magnetoresistance chip, and transmits a voltage signal obtained by measurement to the control unit, and then, the control unit calculates the magnetoresistance value of the corresponding to-be-measured magnetoresistance chip according to the current signal and the voltage signal. The device and the method can measure the magnetoresistance of large batch of magnetic material chips quickly, accurately and efficiently in an automatic manner.
Description
Technical field
The accurate location that the present invention relates to the micro magnetic device is measured and treatment technology with the magneto-resistor of the associated magnetic sensor that adopts Hall effect, AMR, GMR, TMR, more particularly, relates to a kind of magneto-resistor self-operated measuring unit and measuring method.
Background technology
Magnetoresistance effect is that magnetoresistance effect is called for short MR; When on alive metal or semiconductor, applying magnetic field exactly; The phenomenon of significant change can take place in its resistance value, and this mainly is because the electron spin magnetic moment results of interaction in externally-applied magnetic field and metal or the semiconductor.Usually the change in resistance that magnetic field is caused is write as Δ ρ=ρ (H)-ρ (0), and wherein ρ (H) and ρ (0) are illustrated respectively in the magnetic field H and resistivity during no magnetic field.The size of magneto-resistor is often expressed as: MR=Δ ρ/ρ * 100%, wherein ρ can be ρ (0) or ρ (H).
The magnetoresistance effect of the magnetic material that has been studied at present, can roughly be divided into following several kinds: the normal magnetic flux resistance of the magnetic material that 1) is directly caused by magnetic field is called for short OMR; 2) anisotropic magnetoresistance that interrelates with technical magnetization is called for short AMR; 3) especially big magneto-resistor is called for short CMR in the rare earth doped oxide; 4) distinctive giant magnetoresistance is called for short GMR in magnetoresistance effect and the membrana granulosa; 5) tunnel magneto resistance is called for short TMR etc.
The MR of most non-magnetic conductors is very for a short time to be about 10
-5%, the MR maximum of magnetic conductor is about 3～5%, and the variation of resistivity is relevant with the angle of direction of current in magnetic direction and the conductor promptly has an anisotropy, is called anisotropic magnetoresistance AMR.
1988; The Albert Fert of the Paris, FRA university professor seminar of the magneto-resistor that studies for a long period of time phenomenon; The model of the magnetic metal electrical phenomena that proposes from Britain physicist N.F.Mott has designed a kind of multi-layer film structure, and has found that in the Fe/Cr multilayer film of molecular beam epitaxy preparation MR can reach 50%; Its value much larger than common AMR, successfully " amplification " the magneto-resistor phenomenon.And magneto-resistor is isotropic on thin film planar.People are referred to as giant magnetoresistance GMR.
About 1998, large reluctance magnetic head begins to be widely used in the middle of the hard disk, and from that time, in short several years, the capacity of hard disk has just risen to current 400G from 4G.But even if this all-powerful technology has developed into now also near the limit, the lifting of hard-disk capacity must be sought new technology.At present the industry next-generation technology of generally acknowledging is " perpendicular magnetic recording " technology, and promptly the line at the S/N the two poles of the earth of " recorded bit " is perpendicular to disc, and technology before this all belongs to " horizontal magnetic recording " technology.When hard disk when perpendicular magnetic recording technol changes, large reluctance magnetic head also will be replaced by " tunnel magnetoresistive magnetic head " simultaneously.
In most metal, the changing value of resistivity is for just, and the change in resistance value of transition metal and metalloid alloy and saturation magnets is for negative.Semiconductor has big magneto-resistor anisotropy.Utilize magnetoresistance effect, can process the mistor element, its common used material has indium antimonide, indium arsenide etc.The mistor element mainly is used for constructing displacement transducer, speed probe, position transducer and speed pickup etc.In order to improve sensitivity, increase resistance, can be the mistor element by for example straight line or the annular use that is together in series of definite shape.In actual use; Honeywell magnetic field sensor and magnetometer have very high degree of accuracy; Can be incorporated into easily in nearly all applied environment, applied environment comprises electronic compass, magnetometer, position sensing-linearity and angular position pick up, vehicle detection solution, global navigation satellite positioning GPS solution, vehicle-mounted information service system.In addition, Hall effect also is the typical effect of magnetic field to the resistance influence.U.S. physicist Hall is found; If the conductor that is arranged in magnetic field is applied a voltage; The direction in this magnetic field is perpendicular to the direction of applying voltage; On not only vertical with magnetic field but also vertical with applying direction of current direction, can produce another voltage so, people are called Hall voltage with this voltage, produce this phenomenon and are called as Hall effect.More generally, be exactly when in the conductor electric current being arranged, just there is electric charge carrier to move inside.And when in the conductor magnetic field being arranged, the electric charge carrier motion in the conductor will be influenced, and these electric charge carriers therefore maybe be toward certain on one side by in the past.The both sides of conductor will produce voltage difference.The Hall effect of ferromagnetic material is made up of two parts usually, and the resistance of general nonmagnetic metal material should be proportional to externally-applied magnetic field, is called general Hall effect.Yet in ferromagnetic metallic material, its resistance is also relevant with the magnetization of material, and this is called as anomalous Hall effect.According to the hall device that Hall effect is made, be the work medium exactly with magnetic field, change the exercise parameter of object the form output of digital voltage into, make it to possess the function of sensing and switch.Till settled the present; On the automobile there be the hall device of widespread use in modern times: on ignition distributor, make speed pickup, autometasomatism and mileometer, the liquid physics amount detector in signal transducer, the ABS system, various current detecting and duty diagnosis, engine speed and crankshaft angle sensor, various switch with electric loading, or the like.Hall device changes electric signal output into through detecting changes of magnetic field, can be used for the variation of each parts operational factor of monitoring and measuring automobile.For example position, displacement, angle, angular velocity, rotating speed or the like, and can these variablees be carried out quadratic transformation; But gaging pressure, quality, liquid level, flow velocity, flow etc.Direct and the ECU interface of hall device output quantity can be realized automatic detection.Present hall device all can bear certain vibration, can in 150 degrees centigrade of scopes above freezing, work at subzero 40 degrees centigrade, and all sealing does not receive water oil contamination, can adapt to the abominable working environment of automobile fully.
This shows that magnetoresistance effect has a large amount of widespread uses, and according to market survey, magnetic sensor is based on this replacing traditional mechanical switch device gradually and is becoming main flow.Yet existing magneto-resistor measuring instrument all is to be merely able to measure a thin magnetic film magneto-resistor, and operation such as the sample that changes the outfit all needs manually, and efficient is low and be not suitable for the application demand of large-scale industrialization measurement.
Summary of the invention
To the manual measurement film magneto-resistor that exists in the prior art; Cause efficient low and be not suitable for the problem of the application demand that large-scale industrialization measures; The purpose of this invention is to provide a kind of magneto-resistor self-operated measuring unit and measuring method, a large amount of magnetic material chip of measurement magneto-resistor that can be rapidly and efficiently.
For achieving the above object, the technical scheme that the present invention adopts is following:
According to an aspect of the present invention; A kind of magneto-resistor self-operated measuring unit is provided; Comprise magneto-resistor measuring unit, field generating unit, sample mobile unit and control module, said control module is connected with magneto-resistor measuring unit, field generating unit and sample mobile unit respectively through data collecting card; Said field generating unit level is located at the periphery of magneto-resistor sample to be measured, and the field generating unit of magneto-resistor sample to be measured top is provided with opening; Said magneto-resistor measuring unit is located at the top of field generating unit, and said sample mobile unit is located at the below of field generating unit, and is connected fixing with field generating unit;
Wherein, said magneto-resistor measuring unit receives the measuring control signal of control module, and is connected with magneto-resistor sample to be measured through opening.
Said field generating unit comprises coil, soft magnetism substrate and magnetic field alterating and direct current potential source, and said coil is located at the top of soft magnetism substrate, and is connected with the soft magnetism substrate; Said soft magnetism substrate is located at the top of sample mobile unit, and is connected fixing with the sample mobile unit; Magneto-resistor sample to be measured is located at soft magnetism substrate top, and magneto-resistor sample to be measured is between coil and soft magnetism substrate; One end of said magnetic field alterating and direct current potential source is connected with said control module, and the other end is connected with coil.
The material of said soft magnetism substrate is FeCo or elemental metals.
Said magneto-resistor measuring unit comprises microscope, four point probe, lock-in amplifier, combined-voltage table and ac and dc current voltage source, and said four point probe, microscope are located at the top of magneto-resistor sample to be measured successively; Said four point probe constitutes through circuit board and ac and dc current voltage source measures the loop; Said four point probe also is connected with an end of lock-in amplifier through circuit board, and the other end of lock-in amplifier is connected with the combined-voltage epiphase; Said four point probe also is connected with magneto-resistor sample to be measured through circuit board; Said control module is connected with microscope, four point probe, combined-voltage table and ac and dc current voltage source respectively.
Said sample mobile unit comprises sample stage control box and mobile example platform, and said control module is connected with the mobile example platform through the sample stage control box; Said mobile example platform is located at the below of field generating unit.
According to a further aspect in the invention, a kind of magneto-resistor method for automatic measurement is provided also, the concrete steps of this measuring method are:
A. after magneto-resistor sample to be measured being put into field generating unit through opening, send measuring control signal by control module;
B. after the magneto-resistor measuring unit receives measuring control signal, be connected with arbitrary magneto-resistor chip in the magneto-resistor sample to be measured;
C. control module produces the corresponding magnetic field of measuring according to the required measurement requirement controlling magnetic field generating unit of preset magneto-resistor chip to be measured;
D. the magneto-resistor measuring unit is provided with corresponding current signal according to the required measurement requirement of magneto-resistor chip to be measured; And will measure the voltage signal that obtains and be sent to control module, calculate the magnetoelectricity resistance that obtains corresponding magneto-resistor chip to be measured by control module according to current signal and voltage signal;
E. according to magneto-resistor chip coordinate that is preset in magneto-resistor sample to be measured in the control module and the location of the magneto-resistor chip among the step B, according to the loop test principle a back magneto-resistor chip to be measured is linked to each other with the magneto-resistor measuring unit by the sample mobile unit;
F. repeating step C is to step e, and magneto-resistor chips all in magneto-resistor sample to be measured are all accomplished corresponding measurement.
The concrete steps of described step B are:
B1. microscope in the magneto-resistor measuring unit and four point probe descend after receiving measuring control signal simultaneously, until in control module, knowing that through microscope observing magneto-resistor sample shape to be measured is as the criterion;
B2. the four point probe that descends separately, and adjust its position, the surface that makes four point probe pass through the arbitrary magneto-resistor chip in circuit board and the magneto-resistor sample to be measured contacts.
The concrete steps of described step C are:
C1. control module makes coil produce corresponding electromagnetic field according to the magnetic field alterating and direct current potential source in the required measurement requirement controlling magnetic field generating unit of magneto-resistor chip to be measured;
C2. increase the electromagnetic field that produces by coil through the soft magnetism substrate, produce the corresponding magnetic field of measuring.
The concrete steps of described step D are:
D1., the current signal of magneto-resistor chip to be measured is set according to the required measurement requirement of magneto-resistor chip to be measured through the ac and dc current voltage source in the magneto-resistor measuring unit;
D2. four point probe obtains the voltage signal of magneto-resistor chip to be measured through circuit board, and this voltage signal is measured the voltage signal after obtaining to amplify and sent it to control module by the combined-voltage table after lock-in amplifier amplifies;
D3. the voltage signal calculating of control module according to current signal and after amplifying obtains the magnetoelectricity resistance of corresponding magneto-resistor chip to be measured.
Sample mobile unit in the said step e comprises sample stage control box and mobile example platform, moves through driving the mobile example platform by predefined step distance of control module and stepped intervals time control sample stage control box.
Compared with prior art; Adopt a kind of magneto-resistor self-operated measuring unit of the present invention and measuring method; Comprise magneto-resistor measuring unit, field generating unit, sample mobile unit and control module, said control module links to each other with magneto-resistor measuring unit, field generating unit and sample mobile unit respectively through data collecting card; Said field generating unit level is located at the periphery of magneto-resistor sample to be measured, and the field generating unit of magneto-resistor sample to be measured top is provided with opening; Said magneto-resistor measuring unit is located at the top of field generating unit, and said sample mobile unit is located at the below of field generating unit, and is connected fixing with field generating unit; Wherein, said magneto-resistor measuring unit receives the measuring control signal of control module, and links to each other with magneto-resistor sample to be measured through opening.At first, magneto-resistor sample to be measured put into field generating unit through opening after, send measuring control signal by control module, after the magneto-resistor measuring unit receives measuring control signal, be connected with arbitrary magneto-resistor chip in the magneto-resistor sample to be measured.Then, control module produces the corresponding magnetic field of measuring according to the required measurement requirement controlling magnetic field generating unit of preset magneto-resistor chip to be measured; The magneto-resistor measuring unit is provided with corresponding current signal according to the required measurement requirement of magneto-resistor chip to be measured; And will measure the voltage signal that obtains and be sent to control module, calculate the magnetoelectricity resistance that obtains corresponding magneto-resistor chip to be measured by control module according to current signal and voltage signal; Then, according to magneto-resistor chip coordinate that is preset in magneto-resistor sample to be measured in the control module and magneto-resistor chip location, according to the loop test principle a back magneto-resistor chip to be measured is linked to each other with the magneto-resistor measuring unit by the sample mobile unit.
Magneto-resistor self-operated measuring unit of the present invention and measuring method can be quick and precisely measured magnetic material chip magneto-resistor in enormous quantities efficiently automatically, once can measure up to ten thousand samples, have broken away from the drawback that manually exchanges sample measurement film magneto-resistor for that existing magneto-resistor measuring instrument can only be one by one; On average the fastest every 200ms just can accomplish one-shot measurement; So not only greatly improved efficiency of measurement, also helped and find best optimal magnetic resistance material rapidly efficiently, all had purposes very big scientific research or practical application in industry aspect; Be that traditional magneto-resistor measuring instrument is incomparable; And all control automatically of measuring process, utilize control module directly to analyze data, fast precisely; Easily and effectively, can under the condition that does not reduce precision, fully satisfy the industrialization demand.Magneto-resistor self-operated measuring unit of the present invention and measuring method not only can be used to measure Hall effect, anomalous Hall effect, anisotropic magnetoresistance AMR, giant magnetoresistance GMR and tunnel magneto resistance TMR etc., and can measure the conventional, electric-resistance of other material.
Description of drawings
Fig. 1 is the principle schematic of a kind of magneto-resistor self-operated measuring unit of the present invention;
Fig. 2 is the principle schematic that adopts the four probe method measuring resistance;
Fig. 3 is the magnetic field synoptic diagram of energization solenoid;
Fig. 4 is the placement graph of a relation of hot-wire coil, testing sample and soft magnetism substrate;
Fig. 5 is the synoptic diagram of electricity (magnetic) field of electric (magnetic) lotus generation of the mirror image of soft magnetism substrate among Fig. 4;
Fig. 6 is magnetic field when having or not the soft magnetism substrate-current relationship comparison diagram, wherein: 26 when the soft magnetism substrate is arranged coil-induced magnetic field and alive relation, 27 coil magnetic field during for no soft magnetism substrate and alive relations;
Fig. 7 is the schematic flow sheet of a kind of magneto-resistor method for automatic measurement of the present invention.
Embodiment
Further specify technical scheme of the present invention below in conjunction with accompanying drawing and embodiment.
See also shown in Figure 1: a kind of magneto-resistor self-operated measuring unit provided by the invention; Comprise magneto-resistor measuring unit, field generating unit, sample mobile unit and control module, control module links to each other with magneto-resistor measuring unit, field generating unit and sample mobile unit respectively through data collecting card.The field generating unit level is located at the periphery of magneto-resistor sample to be measured, and the field generating unit of magneto-resistor sample to be measured top is provided with opening.The magneto-resistor measuring unit is located at the top of field generating unit, and the sample mobile unit is located at the below of field generating unit, and is connected fixing with field generating unit.Wherein, the magneto-resistor measuring unit receives the measuring control signal of control module, and links to each other with magneto-resistor sample to be measured through opening.Control module is a computing machine 13, and the sample mobile unit comprises sample stage control box 12 and mobile example platform 7, and computing machine 13 links to each other with mobile example platform 7 through sample stage control box 12, and mobile example platform 7 is located at the below of field generating unit.Mobile example platform 7 can move 160mm in horizontal extent
2, Moving Unit step-length 0.001mm, the translational speed representative value is 200ms.Field generating unit comprises coil 5, soft magnetism substrate 6 and magnetic field alterating and direct current potential source 11, and coil 5 is located at the top of soft magnetism substrate 6 and is linked to each other with soft magnetism substrate 6.Soft magnetism substrate 6 is located at the top of mobile example platform 7, and is connected fixing with mobile example platform 7.One end of magnetic field alterating and direct current potential source 11 links to each other with mobile example platform 7, and the other end links to each other with coil 5.The voltage max of magnetic field alterating and direct current potential source 11 is about 20V, and its output resistance is typically 50 Ω-1M Ω, its frequency representative value 1 μ Hz-50MHz, and typical enabled production is Keithley 3390.The typical sizes of coil 5: internal diameter is 23mm, and external diameter is 100mm, and thickness is 3mm.The magnetic field of coil 5 is 200
OeThe coercive force of soft magnetism substrate 6 is less than 200
OeThe material of soft magnetism substrate 6 is FeCo or elemental metals.The magneto-resistor measuring unit comprises microscope 1, four point probe 3, lock-in amplifier 8, combined-voltage table 10 and ac and dc current voltage source 9, and four point probe 3, microscope 1 are located at the top of magneto-resistor sample 4 to be measured successively; Four point probe 3 constitutes through circuit board (not shown) and ac and dc current voltage 10 sources measures the loop.Four point probe 3 also links to each other with an end of lock-in amplifier 8 through circuit board, and the other end of lock-in amplifier 8 links to each other with combined-voltage table 10.Four point probe 3 also links to each other with magneto-resistor sample 4 to be measured through circuit board.Computing machine 13 links to each other with microscope 1, four point probe 3, combined-voltage table 10 and ac and dc current voltage source 9 respectively.The input resistance representative value of combined-voltage table 10 is greater than 10
14Ω, frequency range is 1Hz-2MHz, measuring accuracy 100nV, its typical enabled production is Keithley 2001.The range of current representative value of ac and dc current voltage source 9 is 1fA-1.5A, and its typical optional product is Keithley 2636A and Keithley 2400.
When stopped status, the camera lens 2 of four point probe 3 and microscope 1 is suspended at than the higher position of magneto-resistor sample 4 test surfaces to be measured.When preparing surveying work; Magneto-resistor sample 4 to be measured is placed between coil 5 and the soft magnetism substrate 6; The automatic location control of clicking computing machine 13 descends microscope 1 and four point probe 3 simultaneously; And the observations of watching camera lens 2 at computing machine 13, when dropping to camera lens 2 and can know the position of the shape that observes magneto-resistor sample 4 to be measured, stop to descend.Separately automatic more later on decline four point probe 3; And adjust its position; Let it just in time touch the surface that magneto-resistor sample 4 to be measured needs contact; Because probe the inside all is to be built-in with flexible little spring, thus with magneto-resistor sample 4 to be measured in magneto-resistor chip arbitrary to be measured contact after, bring owing to error is inaccurate a spot of probe move up and down and can not damage magneto-resistor sample 4 to be measured.The energising beginning is formal then measures.In measuring process; Automatically control ac and dc current voltage source 9 feeds electric current for magneto-resistor chip to be measured and four point probe to computing machine 3 on the one hand, simultaneous computer 3 is gone back controlling magnetic field alterating and direct current potential source 11 and given coil 5 power supplies; According to the difference of survey magneto-resistor character, different magnetic field is provided.Different when the electric current through coil 5, when making electric current in the coil 5 change, the magnetic field that coil 5 is induced is just different.The magneto-resistor of sample also can change to it.This variation can through ac and dc current voltage source 9 combined-voltage tables 10 record and through data collecting card with data acquisition to computing machine 3, calculate institute's measuring resistance.Through in computing machine 3, importing the program of different coordinate positions or setting changes in coordinates; Sample stage control box 12 is according to the relative displacement of the step-length programmed control mobile example platform that designs 7 through locating for the first time; Accurately move on other magneto-resistor chips to be measured, and measure and to locate magneto-resistor.In this process, do not need each contact condition that calibration plays zither and magneto-resistor sample 4 to be measured of observing.After measurement like this is accomplished, rise the camera lens 2 and four point probe 3 of microscope 1, magneto-resistor sample 4 taking-ups to be measured are got final product.If computing machine 13 can not normally use or suspect when computing machine 13 is not accurate enough, can be through the camera lens 2 of manually regulating microscope 1.The magneto-resistor loop line that magneto-resistor self-operated measuring unit of the present invention is measured a chip the most only needs 200ms, and is convenient and swift, is particularly useful for the measurement of large-batch industrial chip.Magneto-resistor self-operated measuring unit of the present invention, its resistance measurement scope is 1 μ Ω-1M Ω, the accuracy class of relative error can be to 10E
-6The I of MR reaches 0.001%, maximum no maximum; Operating temperature range is-45oC-125oC once to measure 200,000 chips.
Below specify the principle that the present invention mainly utilizes:
1, four probe method
Four probe method normally is used for measuring semi-conductive resistivity.The four probe method measured resistivity has a very large advantage, and it does not need more accurate, and is also more accurate with four probe method when using other method measured resistivity sometimes.
As shown in Figure 2, four metal probes 17 contact with sample 16 surfaces during test, and wherein, two in the outside of metal probe 17 is the galvanization probe, and inboard two are the survey voltage probe.Make sample 16 inner generation pressure drops by the little electric current of current source 14 inputs, measure the voltage of other two probes simultaneously with electrometer, electronics millivoltmeter or the digital voltmeter 15 of high impedance.
The advantage that also has of four probe method is not require preparation alloy junction electrode between probe and the semiconductor samples, and this has brought convenience to measurement.The section resistivity that four probe method can measuring samples radially distributes, thus the inhomogeneous situation of resistivity can be observed.Because it is higher that this method can rapidly, conveniently, nothing destruction be measured the sample and the precision of arbitrary shape, is suitable for using in the large-lot production.
2, increase measurement magnetic field through the soft magnetism substrate
When with hot-wire coil magnetic field being provided, we have placed a soft magnetism substrate in coil bottom is soft magnetosphere, when measuring, places testing sample between coil and the soft magnetosphere, to increase the magnetic field that on sample, produces.
Generally speaking, magnetic field provides dual mode, and a kind of is permanent magnet, and such as magnet etc., another kind is exactly an energization solenoid, but the magnetic field that permanent magnet provides fix, seek out the magnetic field that changes with specific requirement, can only use energization solenoid.In the present invention, owing to need the magnetic field of the continuous variation of different sizes, so we have also selected energization solenoid.The principle of energization solenoid is as shown in Figure 3, and wherein 18 is electric current/potential source, and 19 for surveying with small magnet (magnetic dipole), and 20 is energization solenoid, and 21 is magnetic induction line.When the electric current of current source 18 generations passes through solenoid 20, can produce the magnetic field that is similar to bar magnet.The outside magnetic induction line 21 of energization solenoid is to send and get back to the South Pole from the solenoidal arctic, and the inner magnetic direction of energization solenoid is from the solenoidal south poles arctic.The relation of sense of current and solenoid two ends polarity can also make Ampere's law judge with the right-hand rule in the energization solenoid: the promptly 1) Ampere's law in the electromotion straight wire: hold electromotion straight wire with the right hand; Let thumb point to sense of current, so four sensings that refer to be exactly magnetic induction line around direction; 2) Ampere's law in the energization solenoid: hold energization solenoid with the right hand, make four to refer to that bending is consistent with direction of current, that end of thumb indication is the N utmost point of energization solenoid so.Otherwise left hand.
Because under many circumstances, during such as the measurement anomalous Hall effect, need to produce the magnetic field that constantly changes; So this magnetic field can only produce through hot-wire coil; But the magnetic field that is purely provided by coil is too little, and general using portion in coil adds ferromagnetic material and can improve the magnetic field that coil produces, but this method has hysteresis effect; Measuring the material Hall coefficient still is hall device work, and this is unallowed.Moreover, the geometric volume that produces the coil in magnetic field can not be too big, when coil is too big, because its resistance is bigger; The thermal effect meeting highly significant of electric current, as shown in Figure 4, wherein 22 is hot-wire coil; 23 is hub of a spool, and 24 is testing sample, and 25 is the soft magnetism substrate.Use internal diameter as 23mm, external diameter as 100mm and thickness during as the coil 22 generation magnetic fields of the Cu lead coiled of 3mm, when passing to the 1A electric current to produce 200
OeMagnetic field the time; In the normal air environment; Its temperature can rise to 80 deg.c, and this not only influences normal surveying work, also the character of material own is had very big influence; Because a lot of magnetic materials such as Hall material etc. have very big susceptibility to temperature, so influence of thermal effect is huge and must discharges.Though radiation fin etc. can be alleviated thermal effect on coil, can increase its institute again greatly and take up space and cost dearly, so should not take.Many deficiencies and defective based on traditional magnetic field sources presentation mode have proposed new mode among the present invention, as shown in Figure 4; Below coil 22, placing a common soft magnetic film layer exactly is soft magnetism substrate 25, and testing sample 24 is placed between coil 22 and the soft magnetism substrate 25, at this moment; As shown in Figure 5, the soft magnetic film layer is that soft magnetism substrate 25 just looks like a mirror, can reflect the magnetic field that hot-wire coil produces; If pass to the electric current of identical size like this, the magnetic field that produces can increase about 2 times.This is that we also can regard it as a magnetic dipole, for electromagnetics because energization solenoid just is equivalent to a small magnet; Magnetic charge viewpoint and magnetic dipole viewpoint are equivalences fully; So the magnetic effect of energization solenoid can be regarded as two magnetic charges.When below coil, placing a soft magnetic film layer; The magnetic effect that produces up of equivalence magnetic charge, just be equivalent to soft magnetosphere be the effect of closing that mirror image magnetic charge and former magnetic charge on the symmetric position of the plane of symmetry produce magnetic field jointly, clearly; Originally the magnetic field of each magnetic charge generation is above soft magnetosphere; Because the similar direct reflection effect of soft magnetosphere just is equivalent to the magnetic field that 2 magnetic charges produce, promptly magnetic field can increase to 2 times nearly.Shown in Figure 4 by internal diameter be 23mm, external diameter be 100mm and thickness be the coil of the Cu lead coiled of 3mm produce magnetic field the time; If below coil, place the FeCo soft magnetic film layer that a magnetic permeability is about 800H/m; Then under same current; Magnetic field can increase to about original 1.9 times, and is as shown in Figure 6.If the magnetic permeability of soft magnetosphere is bigger, then mirror effect is better, and the magnetic field that then produces is just big more.
In sum; In the present invention as will produce the magnetic field with original identical size, feed electric current and can be reduced to the half the of common mode, the thermal effect of generation can also be reduced to original 1/4 like this; And can not produce magnetic hysteresis, promptly magnetic field also just is zero when electric current is zero.In the present invention, soft magnetosphere just is equivalent to the magnetic field that mirror is reflecting energization solenoid, so that it goes without doing is very thick, only needs a very thin one deck get final product, so just can not take too large space.The magnetic field presentation mode that the present invention proposes not only makes the magnetic field of generation double, and has reduced thermal effect with quadratic relationship; Can control the magnetic field size that is produced easily and not have magnetic hysteresis; It is little to account for volume, is convenient to practicality, is to optimization and the improvement greatly of this type of classical magnetic field sources.
See also a kind of magneto-resistor method for automatic measurement shown in Figure 7 again, the concrete steps of this measuring method are:
81. after magneto-resistor sample to be measured put into field generating unit through opening, send measuring control signal by control module;
82. after the magneto-resistor measuring unit receives measuring control signal, be connected with arbitrary magneto-resistor chip in the magneto-resistor sample to be measured;
83. control module produces the corresponding magnetic field of measuring according to the required measurement requirement controlling magnetic field generating unit of preset magneto-resistor chip to be measured;
84. the magneto-resistor measuring unit is provided with corresponding current signal according to the required measurement requirement of magneto-resistor chip to be measured; And will measure the voltage signal that obtains and be sent to control module, calculate the magnetoelectricity resistance that obtains corresponding magneto-resistor chip to be measured by control module according to current signal and voltage signal;
85., according to the loop test principle a back magneto-resistor chip to be measured is linked to each other with the magneto-resistor measuring unit by the sample mobile unit according to magneto-resistor chip coordinate that is preset in magneto-resistor sample to be measured in the control module and the location of the magneto-resistor chip in the step 82;
86. repeating step 83 is to step 85, magneto-resistor chips all in magneto-resistor sample to be measured are all accomplished corresponding measurement.
The concrete steps of described step 82 are:
821. microscope in the magneto-resistor measuring unit and four point probe descend after receiving measuring control signal simultaneously, until in control module, knowing that through microscope observing magneto-resistor sample shape to be measured is as the criterion;
The four point probe 822. descend separately, and adjust its position, the surface that makes four point probe pass through the arbitrary magneto-resistor chip in circuit board and the magneto-resistor sample to be measured contacts.
The concrete steps of described step 83 are:
831. control module makes coil produce corresponding electromagnetic field according to the magnetic field alterating and direct current potential source in the required measurement requirement controlling magnetic field generating unit of magneto-resistor chip to be measured;
832. increase the electromagnetic field that produces by coil through the soft magnetism substrate, produce the corresponding magnetic field of measuring.
The representative value of coil is: internal diameter is 23mm, and external diameter is 100mm, and thickness is 3mm, and the magnetic field of coil is 200
Oe
The representative value of soft magnetism substrate is: the coercive force of soft magnetism substrate is less than 200
Oe, the material of soft magnetism substrate is FeCo or elemental metals.
The concrete steps of described step 84 are:
841. the current signal of magneto-resistor chip to be measured is set according to the required measurement requirement of magneto-resistor chip to be measured through the ac and dc current voltage source in the magneto-resistor measuring unit;
842. four point probe obtains the voltage signal of magneto-resistor chip to be measured through circuit board, this voltage signal is measured the voltage signal after obtaining to amplify and is sent it to control module by the combined-voltage table after lock-in amplifier amplifies;
843. the voltage signal calculating of control module according to current signal and after amplifying obtains the magnetoelectricity resistance of corresponding magneto-resistor chip to be measured.
Sample mobile unit in the said step 85 comprises sample stage control box and mobile example platform, moves through driving the mobile example platform by predefined step distance of control module and stepped intervals time control sample stage control box.
Said step distance is 0.001mm; Said stepped intervals is 200ms.
It is pointed out that self-operated measuring unit according to the invention and method for automatic measurement according to the invention are identical or similar on principle and implementation procedure, so its repeating part repeats no more at this.
Those of ordinary skill in the art will be appreciated that; Above embodiment is used for explaining the object of the invention; And be not with opposing qualification of the present invention; As long as in essential scope of the present invention, all will drop in the scope of claim of the present invention variation, the modification of the above embodiment.
Claims (10)
1. magneto-resistor self-operated measuring unit; It is characterized in that: comprise magneto-resistor measuring unit, field generating unit, sample mobile unit and control module, said control module is connected with magneto-resistor measuring unit, field generating unit and sample mobile unit respectively through data collecting card; Said field generating unit level is located at the periphery of magneto-resistor sample to be measured, and the field generating unit of magneto-resistor sample to be measured top is provided with opening; Said magneto-resistor measuring unit is located at the top of field generating unit, and said sample mobile unit is located at the below of field generating unit, and is connected fixing with field generating unit; Wherein, said magneto-resistor measuring unit receives the measuring control signal of control module, and is connected with magneto-resistor sample to be measured through opening.
2. magneto-resistor self-operated measuring unit according to claim 1 is characterized in that: said field generating unit comprises coil, soft magnetism substrate and magnetic field alterating and direct current potential source, and said coil is located at the top of soft magnetism substrate, and is connected with the soft magnetism substrate; Said soft magnetism substrate is located at the top of sample mobile unit, and is connected fixing with the sample mobile unit; Magneto-resistor sample to be measured is located at soft magnetism substrate top, and magneto-resistor sample to be measured is between coil and soft magnetism substrate; One end of said magnetic field alterating and direct current potential source is connected with said control module, and the other end is connected with coil.
3. magneto-resistor self-operated measuring unit according to claim 2 is characterized in that: the material of said soft magnetism substrate is FeCo or elemental metals.
4. magneto-resistor self-operated measuring unit according to claim 1; It is characterized in that: said magneto-resistor measuring unit comprises microscope, four point probe, lock-in amplifier, combined-voltage table and ac and dc current voltage source, and said four point probe, microscope are located at the top of magneto-resistor sample to be measured successively; Said four point probe constitutes through circuit board and ac and dc current voltage source measures the loop; Said four point probe also is connected with an end of lock-in amplifier through circuit board, and the other end of lock-in amplifier is connected with the combined-voltage epiphase; Said four point probe also is connected with magneto-resistor sample to be measured through circuit board; Said control module is connected with microscope, four point probe, combined-voltage table and ac and dc current voltage source respectively.
5. magneto-resistor self-operated measuring unit according to claim 1 is characterized in that: said sample mobile unit comprises sample stage control box and mobile example platform, and said control module is connected with the mobile example platform through the sample stage control box; Said mobile example platform is located at the below of field generating unit.
6. magneto-resistor method for automatic measurement, it is characterized in that: the concrete steps of this measuring method are:
A. after magneto-resistor sample to be measured being put into field generating unit through opening, send measuring control signal by control module;
B. after the magneto-resistor measuring unit receives measuring control signal, be connected with arbitrary magneto-resistor chip in the magneto-resistor sample to be measured;
C. control module produces the corresponding magnetic field of measuring according to the required measurement requirement controlling magnetic field generating unit of preset magneto-resistor chip to be measured;
D. the magneto-resistor measuring unit is provided with corresponding current signal according to the required measurement requirement of magneto-resistor chip to be measured; And will measure the voltage signal that obtains and be sent to control module, calculate the magnetoelectricity resistance that obtains corresponding magneto-resistor chip to be measured by control module according to current signal and voltage signal;
E. according to magneto-resistor chip coordinate that is preset in magneto-resistor sample to be measured in the control module and the location of the magneto-resistor chip among the step B, according to the loop test principle a back magneto-resistor chip to be measured is linked to each other with the magneto-resistor measuring unit by the sample mobile unit;
F. repeating step C is to step e, and magneto-resistor chips all in magneto-resistor sample to be measured are all accomplished corresponding measurement.
7. magneto-resistor method for automatic measurement according to claim 6 is characterized in that: the concrete steps of described step B are:
B1. microscope in the magneto-resistor measuring unit and four point probe descend after receiving measuring control signal simultaneously, until in control module, knowing that through microscope observing magneto-resistor sample shape to be measured is as the criterion;
B2. the four point probe that descends separately, and adjust its position, the surface that makes four point probe pass through the arbitrary magneto-resistor chip in circuit board and the magneto-resistor sample to be measured contacts.
8. magneto-resistor method for automatic measurement according to claim 6 is characterized in that: the concrete steps of described step C are:
C1. control module makes coil produce corresponding electromagnetic field according to the magnetic field alterating and direct current potential source in the required measurement requirement controlling magnetic field generating unit of magneto-resistor chip to be measured;
C2. increase the electromagnetic field that produces by coil through the soft magnetism substrate, produce the corresponding magnetic field of measuring.
9. magneto-resistor method for automatic measurement according to claim 6 is characterized in that: the concrete steps of described step D are:
D1., the current signal of magneto-resistor chip to be measured is set according to the required measurement requirement of magneto-resistor chip to be measured through the ac and dc current voltage source in the magneto-resistor measuring unit;
D2. four point probe obtains the voltage signal of magneto-resistor chip to be measured through circuit board, and this voltage signal is measured the voltage signal after obtaining to amplify and sent it to control module by the combined-voltage table after lock-in amplifier amplifies;
D3. the voltage signal calculating of control module according to current signal and after amplifying obtains the magnetoelectricity resistance of corresponding magneto-resistor chip to be measured.
10. magneto-resistor method for automatic measurement according to claim 6; It is characterized in that: the sample mobile unit in the said step e comprises sample stage control box and mobile example platform, moves through driving the mobile example platform by predefined step distance of control module and stepped intervals time control sample stage control box.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103777157A (en) * | 2014-01-15 | 2014-05-07 | 华中科技大学 | Testing system and testing method for perpendicular magnetic anisotropic magnetic tunnel junction unit |
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| CN104849594A (en) * | 2015-05-14 | 2015-08-19 | 中国科学院过程工程研究所 | High-precision measurement apparatus of electrical transport property of ionic liquid and method for measuring magneto-resistor effect by using the same |
| CN104950269A (en) * | 2015-07-24 | 2015-09-30 | 中国工程物理研究院电子工程研究所 | Two-dimensional magnetic field probe table measuring system |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020130658A1 (en) * | 2001-02-05 | 2002-09-19 | Masayuki Abe | Magnetic head measuring apparatus and measuring method applied to the same apparatus |
| JP2010152973A (en) * | 2008-12-25 | 2010-07-08 | Fujitsu Ltd | Device and method for measurement of magnetic characteristic |
| CN201590184U (en) * | 2009-11-30 | 2010-09-22 | 河海大学 | Experimental facility of giant magnetoresistance effect |
| CN101934608A (en) * | 2010-07-22 | 2011-01-05 | 兰州大学 | Giant Hall effect film material for magnetic field measurement and preparation method thereof |
| CN201876536U (en) * | 2010-11-22 | 2011-06-22 | 沈阳工业大学 | Adjustable-magnetic-circuit measurement device for two-dimensional magnetic property of electrical sheets |
| CN102132168A (en) * | 2008-09-29 | 2011-07-20 | 欧姆龙株式会社 | Magnetic field detection element and signal transmission element |
| CN202196162U (en) * | 2011-09-09 | 2012-04-18 | 兰州大学 | Automatic magnetoresistance measuring device |
-
2011
- 2011-09-09 CN CN2011102665415A patent/CN102419425B/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020130658A1 (en) * | 2001-02-05 | 2002-09-19 | Masayuki Abe | Magnetic head measuring apparatus and measuring method applied to the same apparatus |
| US6617848B2 (en) * | 2001-02-05 | 2003-09-09 | Kabushiki Kaisha Toshiba | Magnetic head measuring apparatus and measuring method applied to the same apparatus |
| CN102132168A (en) * | 2008-09-29 | 2011-07-20 | 欧姆龙株式会社 | Magnetic field detection element and signal transmission element |
| JP2010152973A (en) * | 2008-12-25 | 2010-07-08 | Fujitsu Ltd | Device and method for measurement of magnetic characteristic |
| CN201590184U (en) * | 2009-11-30 | 2010-09-22 | 河海大学 | Experimental facility of giant magnetoresistance effect |
| CN101934608A (en) * | 2010-07-22 | 2011-01-05 | 兰州大学 | Giant Hall effect film material for magnetic field measurement and preparation method thereof |
| CN201876536U (en) * | 2010-11-22 | 2011-06-22 | 沈阳工业大学 | Adjustable-magnetic-circuit measurement device for two-dimensional magnetic property of electrical sheets |
| CN202196162U (en) * | 2011-09-09 | 2012-04-18 | 兰州大学 | Automatic magnetoresistance measuring device |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11035716B2 (en) | 2013-01-25 | 2021-06-15 | MultiDimension Technology Co., Ltd. | Digital liquid-level sensor having at least one tunneling magnetoresistance switch |
| CN103968918A (en) * | 2013-01-25 | 2014-08-06 | 江苏多维科技有限公司 | Digital liquid level sensor |
| CN103968918B (en) * | 2013-01-25 | 2018-11-09 | 江苏多维科技有限公司 | Digital liquid-level sensor |
| CN103777157A (en) * | 2014-01-15 | 2014-05-07 | 华中科技大学 | Testing system and testing method for perpendicular magnetic anisotropic magnetic tunnel junction unit |
| WO2016026419A1 (en) * | 2014-08-20 | 2016-02-25 | 江苏多维科技有限公司 | Single-chip off-axis magnetoresistive z-x angle sensor and measuring instrument |
| US10473449B2 (en) | 2014-08-20 | 2019-11-12 | MultiDimension Technology Co., Ltd. | Single-chip off-axis magnetoresistive Z-X angle sensor and measuring instrument |
| US11636889B2 (en) | 2015-02-04 | 2023-04-25 | MultiDimension Technology Co., Ltd. | Automatic magnetic flow recording device |
| CN104849594A (en) * | 2015-05-14 | 2015-08-19 | 中国科学院过程工程研究所 | High-precision measurement apparatus of electrical transport property of ionic liquid and method for measuring magneto-resistor effect by using the same |
| CN104849594B (en) * | 2015-05-14 | 2018-05-15 | 中国科学院过程工程研究所 | Ionic liquid Electric transport properties high precision measuring device and the method with its measurement magneto-resistance effect |
| CN104950269A (en) * | 2015-07-24 | 2015-09-30 | 中国工程物理研究院电子工程研究所 | Two-dimensional magnetic field probe table measuring system |
| CN104950269B (en) * | 2015-07-24 | 2017-12-19 | 中国工程物理研究院电子工程研究所 | two-dimensional magnetic field probe station measuring system |
| CN108828477A (en) * | 2018-09-12 | 2018-11-16 | 中国科学院地质与地球物理研究所 | A kind of TMR array scanning formula rock magnetism detector |
| WO2020051924A1 (en) * | 2018-09-12 | 2020-03-19 | 中国科学院地质与地球物理研究所 | Tmr array scanning type rock magnetic detector |
| CN113433493A (en) * | 2021-06-01 | 2021-09-24 | 中国科学院上海光学精密机械研究所 | Magnetic resistance element for measuring magnetic field intensity and measuring system thereof |
| CN114441835A (en) * | 2022-02-10 | 2022-05-06 | 贵州电网有限责任公司 | Double-conductor current measuring method and device based on magnetic field sensing chip |
| CN114441835B (en) * | 2022-02-10 | 2024-09-06 | 贵州电网有限责任公司 | Dual-conductor current measurement method and device based on magnetic field sensing chip |
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