CN102390998B - 含氧化铝颗粒与氮化硅晶须的碳化钨复合材料及制备方法 - Google Patents
含氧化铝颗粒与氮化硅晶须的碳化钨复合材料及制备方法 Download PDFInfo
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Abstract
本发明公开了一种含氧化铝颗粒与氮化硅晶须的碳化钨复合材料及制备方法。该碳化钨复合材料含按质量百分比0.5~3%的氧化铝颗粒和0.4~10%的氮化硅晶须,其余为碳化钨以及不可避免的杂质相;所述氮化硅晶须为原位自生β-Si3N4晶须。本发明制备的WC复合材料不含任何金属粘结相,具有优良的硬度、耐磨性和高温力学性能,以及中等的韧性;本发明不仅可以降低WC复合材料制备的成本,还有效地扩大了其应用范围,该材料适合作为刀具如可转位刀片等,塑性加工工具如拉丝模等,也适合作为剪切工具如冲剪模等。
Description
技术领域
本发明涉及一种碳化钨(WC)材料及其制备方法,具体是指含氧化铝(Al2O3)颗粒与氮化硅(β-Si3N4)晶须的碳化钨复合材料及制备方法。
背景技术
传统的硬质合金是由硬质WC相和低熔点金属类粘结相组成,其中WC具有极高的硬度和优异的抗氧化性和耐腐蚀性,而金属类粘结剂的加入不可避免地会削弱合金的硬度、耐磨损、抗氧化和耐腐蚀等性能,另外还很有可能会使合金的耐磨性下降,特别是在高温下金属粘结相易软化和氧化等特性,均会使得WC硬质合金容易出现过快失效,从而限制了WC硬质合金的应用范围,为此,本领域研究者一直为摆脱金属粘结剂的局限而努力。另外,传统硬质合金体系中最常见的是WC-Co合金,而Co资源的稀缺性以及其战略地位均要求WC硬质合金应尽可能减少或避免Co作为粘结相。
中国专利200410068022.8公开了一种超细纯碳化钨的烧结方法,该方法是利用放电等离子烧结技术制备不含任何粘结相的纯WC材料,获得的致密纯WC材料有着极高的硬度和优异的耐磨性,但由于其断裂韧性低,为此严重阻碍了该材料的应用。WC的化学键主要为共价键,有着陶瓷材料的固有脆性。长期以来,利用传统陶瓷材料的强韧化方法(如颗粒或晶须强韧化)对WC进行增韧的研究一直严重落后于WC-Co的研究,而鲜有报导。在一般陶瓷材料中,通过外加晶须对材料进行强韧化处理,可以有效地提高材料的强度和韧性,但是这种外加晶须的方法往往存在着晶须容易相互缠绕、团聚,难以分散等问题,而且操作人员直接接触晶须可能带来健康危害,使得其可操作性大大降低。中国专利200610011114.1提出了一种原位自生β-Si3N4晶须增韧Si3N4基陶瓷以及一种利用a-Si3N4颗粒在高温下向β-Si3N4转变从而在基体内原位生成β-Si3N4晶须的方法。这种原位生成晶须的方法不仅可增韧陶瓷基体,而且可以很好地解决通常外加陶瓷晶须时遇到的晶须容易相互缠绕、团聚,难以分散等问题,而且也避免了操作人员直接接触晶须所可能带来的健康危害。但这种方法目前只限用于Al2O3基和Si3N4基等少数几种材料中,其应用还有待进一步开发研究。
在不添加金属粘结剂的前提下,进一步提高WC材料的韧性又尽可能地利用纯WC的高硬度特点,是本领域技术研发的热点。
发明内容
本发明的目的在于克服现有技术的不足之处,提供一种不含金属粘结相的含氧化铝颗粒与氮化硅晶须的碳化钨复合材料。
本发明的另一个目的在于利用颗粒与原位自生晶须协同增韧,提供一种含氧化铝颗粒与氮化硅晶须的碳化钨复合材料的制备方法。
本发明的目的可以通过如下措施来实现:
含氧化铝颗粒与氮化硅晶须的碳化钨复合材料,其特征在于:所述碳化钨复合材料含氧化铝颗粒与氮化硅晶须,其余为碳化钨以及不可避免的杂质相;所述氧化铝颗粒的质量百分比为0.5~3%;所述氮化硅晶须为原位自生β-Si3N4晶须,其质量百分比为0.4~10%。
所述原位自生β-Si3N4晶须的长径比≥3。
含氧化铝颗粒与氮化硅晶须的碳化钨复合材料的制备方法,其特征在于:所述制备方法包括如下步骤及其工艺条件:
步骤一:备料
将WC、Al2O3、a-Si3N4粉末按下述质量百分比配比原料粉末:WC87~99%,Al2O30.5~3%,颗粒为0.5~10μm的a-Si3N40.5~10%,其余为不可避免的微量杂质;
步骤二:粉末分散与混合
将上述原料粉末置于有机或无机溶剂中,采用强制手段使团聚粉末分散,再将所得浆料进行湿式低能球磨,制得混合浆料;
步骤三:粉末干燥与过筛
将上述混合浆料置于干燥炉内烘干至溶剂残余量≤1%,然后碾碎、过筛,得到颗粒尺寸≤250μm的混合粉末;
步骤四:烧结粉末
采用放电等离子烧结或热压烧结技术对上述混合粉末进行成型和烧结。
所述Al2O3与a-Si3N4的质量比≥1/10。
所述有机溶剂为乙醇,无机溶剂为水;所述强制手段是指超声震荡和机械搅拌协同作用下实施团聚粉末分散。
所述放电等离子烧结为一步烧结工艺或两步烧结工艺,所述一步烧结工艺条件如下:
烧结电流类型为直流脉冲电流,
烧结压力:30~70Mpa,
烧结升温速率:50~300℃/min,
烧结温度:1550~1900℃,
烧结保温时间:0~20min,
烧结真空度:≤4Pa;
所述两步烧结工艺条件如下:
第一步:
烧结电流类型为直流脉冲电流,
烧结压力:30~70Mpa,
烧结升温速率:50~300℃/min,
烧结温度:1550~1900℃,
烧结保温时间:0~20min,
烧结真空度:≤4Pa;
第二步:
烧结电流类型为直流脉冲电流,
烧结压力:30~70Mpa,
降温速率:50~300℃/min,
烧结温度:1350~1550℃,
烧结保温时间:0~20min,
烧结真空度:≤4Pa。
所述热压烧结为一步烧结工艺或两步烧结工艺,所述一步烧结工艺条件如下:
烧结压力:30~70Mpa,
烧结升温速率:5~20℃/min,
烧结温度:1550~1900℃,
烧结保温时间:0~120min,
烧结气氛:真空度≤4Pa或0.1MPa的N2气氛保护;
所述两步烧结工艺条件如下:
第一步:
烧结压力:30~70Mpa,
烧结升温速率:5~20℃/min,
烧结温度:1550~1900℃,
烧结保温时间:0~120min,
烧结气氛:真空度≤4Pa或0.1MPa的N2气氛保护;
第二步:
烧结压力:30~70Mpa,
降温速率:5~20℃/min,
烧结温度:1350~1550℃,
烧结保温时间:0~120min,
烧结气氛:真空度≤4Pa或0.1MPa的N2气氛保护。
本发明与现有技术相比具有以下突出的优点:
1、本发明制备的WC复合材料是一种由Al2O3颗粒与原位自生β-Si3N4晶须协同增韧的不含有任何金属粘结相的WC复合材料,它具有优良的硬度、耐磨性和高温力学性能,以及中等的韧性,它适合作为刀具如可转位刀片等,塑性加工工具如拉丝模等,也适合作为剪切工具如冲剪模等。
2、本发明制备的WC复合材料不含有Co,与传统WC-Co硬质合金相比,它不仅可以降低成本,还可以节约稀缺而且具战略性的Co资源。
3、本发明制备的WC复合材料,它不含有任何金属粘结相,因而它比以金属作为粘结相的WC基硬质合金具有更高的硬度和更优异的耐磨性能,尤其是在较高的工作温度下不会因为金属的软化而导致材料硬度大幅度下降,因此它更适合应用在对硬度和耐磨性要求比较高或工作温度比较高的条件下,譬如可用作切削高强合金、高速切削的刀具和拉丝模等。另外,它的抗氧化和耐腐蚀性能也有显著提高,因此也更适用于各种腐蚀性环境中,譬如作为特殊的密封材料,从而扩大了WC材料的应用范围。
4、本发明制备的WC复合材料,它含有Al2O3颗粒与β-Si3N4晶须,由于两者的协同增韧,因此可以获得比纯WC或由单一陶瓷组元增韧WC材料更高韧性的无粘结相WC材料。
5、本发明制备方法采用了原位自生法在WC基体中引入β-Si3N4晶须,充分利用了a-Si3N4在高温下向β-Si3N4转变以及β-Si3N4晶粒易沿特定晶面生长的特点。在初始材料粉末的准备中,只需将a-Si3N4颗粒粉末与其它颗粒粉末充分均匀混合即可以在随后的烧结过程中在WC晶间生成均匀分布的β-Si3N4晶须,经X射线衍射分析得到,a-Si3N4向β-Si3N4转变的最终转化率≥80%。为此本发明不但很好地解决了通常外加陶瓷晶须时遇到的晶须容易相互缠绕、团聚,难以分散等问题,而且也避免了操作人员直接接触晶须所可能带来的健康危害。
6、本发明采用相对廉价的Al2O3与a-Si3N4粉末作为原料,可以降低WC基硬质材料的生产成本。加入的Al2O3既作为a-Si3N4向β-Si3N4转变的烧结助剂,同时也作为颗粒增韧相弥散分布在WC基体中。
7、本发明采用的a-Si3N4粉末其表面不可避免地存在少量的SiO2,在烧结过程中,SiO2与Al2O3在1587℃左右会发生共晶发应形成液相,从而促进材料的致密化,为在相对较低的烧结温度下制备致密的无粘结相WC材料提供了可能。
附图说明
图1为实施例1获得的含氧化铝颗粒与氮化硅晶须的碳化钨复合材料的断口形貌扫描电镜(S EM)图;
图2为实施例1获得的含氧化铝颗粒与氮化硅晶须的碳化钨复合材料的显微组织S EM图;
图3为实施例2获得的含氧化铝颗粒与氮化硅晶须的碳化钨复合材料的断口形貌S EM图;
图4为实施例2获得的含氧化铝颗粒与氮化硅晶须的碳化钨复合材料的显微组织S EM图;
图5为实施例3获得的含氧化铝颗粒与氮化硅晶须的碳化钨复合材料的断口形貌S EM图;
图6为实施例3获得的含氧化铝颗粒与氮化硅晶须的碳化钨复合材料的显微组织S EM图。
具体实施方式
通过如下实施例对本发明作进一步说明,但本发明的实施方式不仅限于此。
实施例1
含氧化铝颗粒与氮化硅晶须的碳化钨复合材料的制备方法包括如下步骤及其工艺条件:
步骤一:备料
将WC、Al2O3、a-Si3N4粉末按下述质量百分比用量进行配比:WC 96%,Al2O31%,a-Si3N43%,其余为不可避免的微量杂质;WC粉末纯度≥98.7%、粒度约100nm,Al2O3粉末纯度≥99.9%、粒度1~2μm,a-Si3N4粉末表面氧含量为3~5wt.%,粒度0.8~1μm。
步骤二:粉末分散与混合
将上述原料粉末浸没于乙醇中,进行超声震荡加机械搅拌,使团聚粉末分散,再将所得浆料进行湿式低能球磨,所用球磨机为行星式,球磨礶(500mL)与磨球材质为Al2O3陶瓷,球料比为2∶1,在转速200r/min工况下,球磨30小时制得混合浆料。
步骤三:粉末干燥与过筛
将上述混合浆料置于干燥炉内烘干至溶剂残余量≤1%,然后碾碎、过筛,得到颗粒尺寸≤250μm的混合粉末。
步骤四:烧结粉末
将步骤三所得的混合粉末称取60g装入直径为Φ30mm的石墨烧结模具中进行放电等离子一步烧结,烧结电流类型为直流脉冲电流,其中烧结压力为70MPa,烧结温度为1800℃,升温速率为100℃/min,保温时间为5min,真空度为4Pa。
通过以上方法制备,所得碳化钨复合材料含氧化铝颗粒的质量百分比约为1%;原位自生β-Si3N4晶须的质量百分比约为2.5%,其余为碳化钨以及不可避免的杂质相。上述无粘结相含氧化铝颗粒与氮化硅晶须的碳化钨复合材料,其硬度为HV1018.65GPa,断裂韧性为7.25MPa·m1/2(断裂韧性是通过维氏硬度压痕法进行测量(Anstis G R,Chantikul P,Lawn B R,et al.,Acritical-evaluation of indentation techniques for measuring fracturetoughness. l. direct crack measurements[J].Joumal of the AmericanCeramic Society,1981.64(9):533-538)),其断口形貌与显微组织形貌分别如图1,图2所示。根据图1所示的断口形貌估算出材料基体的晶粒尺寸为200~800nm;根据图2所示的材料体内β-Si3N4晶须的长径比为5~6。
实施例2
含氧化铝颗粒与氮化硅晶须的碳化钨复合材料的制备方法包括如下步骤及其工艺条件:
步骤一:备料
将WC、Al2O3、a-Si3N4粉末按下述质量百分比用量进行配比:WC 94%,Al2O31%,a-Si3N45%,其余为不可避免的微量杂质;WC粉末纯度≥98.7%、粒度约100nm,Al2O3粉末纯度≥99.9%、粒度1~2μm,a-Si3N4粉末表面氧含量为3~5wt.%,粒度0.8~1μm。
步骤二:粉末分散与混合
将上述原料粉末浸没于乙醇中,进行超声震荡加机械搅拌,使团聚粉末分散,再将所得浆料进行湿式低能球磨,所用球磨机为行星式,球磨礶(500mL)与磨球材质为Al2O3陶瓷,其球料比为2∶1,在转速200r/min工况下,球磨30小时制得混合浆料。
步骤三:粉末干燥与过筛
将上述混合浆料置于干燥炉内烘干至溶剂残余量≤1%,然后碾碎、过筛,得到颗粒尺寸≤250μm的混合粉末。
步骤四:烧结粉末
将步骤三所得的混合粉末称取60g装入直径为Φ30mm的石墨烧结模具中进行放电等离子两步烧结,烧结电流类型为直流脉冲电流,其中烧结压力为70MPa,真空度为4Pa,烧结分两步完成:先以100℃/min的升温速率升至1550℃,保温10min,随后以50℃/min的降温速率降至1450℃,再保温10min,烧结完成。
通过以上步骤制备,所得碳化钨复合材料含氧化铝颗粒的质量百分比约为1%;原位自生β-Si3N4晶须的质量百分比约为4.5%,其余为碳化钨以及不可避免的杂质相。上述无粘结相含氧化铝颗粒与氮化硅晶须的碳化钨复合材料,其硬度为HV1021.42GPa,断裂韧性为5.94MPa·m1/2,其断口形貌与显微组织形貌分别如图3,图4所示。根据图3所示的断口形貌估算出材料基体的晶粒尺寸为100~300nm;根据图4所示的材料体内β-Si3N4晶须的长径比为3~5。
实施例3
含氧化铝颗粒与氮化硅晶须的碳化钨复合材料的制备方法包括如下步骤及其工艺条件:
步骤一:备料
将WC、Al2O3、a-Si3N4粉末按下述质量百分比用量进行配比:WC 97%,Al2O31%,a-Si3N42%,其余为不可避免的微量杂质;WC粉末纯度≥98.7%、粒度约100nm,Al2O3粉末纯度≥99.9%、粒度1~2μm,a-Si3N4粉末表面氧含量为3~5wt.%,粒度0.8~1μm。
步骤二:粉末分散与混合
将上述原料粉末浸没于乙醇中,进行超声震荡加机械搅拌,使团聚粉末分散,再将所得浆料进行湿式低能球磨,所用球磨机为行星式,球磨礶(500mL)与磨球材质为Al2O3陶瓷,其球料比为2∶1,在转速200r/min工况下,球磨30小时制得混合浆料。
步骤三:粉末干燥与过筛
将上述混合浆料置于干燥炉内烘干至溶剂残余量≤1%,然后碾碎、过筛,得到颗粒尺寸≤250μm的混合粉末。
步骤四:烧结粉末
将步骤三所得的混合粉末称取60g装入直径为Φ30mm的石墨烧结模具中进行热压两步烧结,其中烧结压力为70MPa,烧结气氛为N2(0.1MPa),烧结分两步完成:先以20℃/min的升温速率升至1550℃,保温60min,随后以10℃/min的降温速率降至1450℃,再保温60min,烧结完成。
通过以上步骤制备,所得碳化钨复合材料含氧化铝颗粒的质量百分比约为1%;原位自生β-Si3N4晶须的质量百分比约为1.7%,其余为碳化钨以及不可避免的杂质相。上述无粘结相含氧化铝颗粒与氮化硅晶须的碳化钨复合材料,其硬度为HV1022.87GPa,断裂韧性为5.64MPa·m1/2,其断口形貌与显微组织形貌分别如图5,图6所示。根据图5所示的断口形貌估算出材料基体的晶粒尺寸为100~200nm;根据图6所示的材料体内β-Si3N4晶须的长径比为3~4。
实施例4
含氧化铝颗粒与氮化硅晶须的碳化钨复合材料的制备方法包括如下步骤及其工艺条件:
步骤一:备料
将WC、Al2O3、a-Si3N4粉末按下述质量百分比用量进行配比:WC 99%,Al2O30.5%,a-Si3N40.5%,其余为不可避免的微量杂质;WC粉末纯度≥99.9%、粒度约800nm,Al2O3粉末纯度≥99.9%、粒度1~2μm,a-Si3N4粉末表面氧含量为3~5wt.%,粒度8~10μm。
步骤二:粉末分散与混合
将上述原料粉末浸没于乙醇中,进行超声震荡加机械搅拌,使团聚粉末分散,再将所得浆料进行湿式低能球磨,所用球磨机为行星式,球磨礶(500mL)与磨球材质为Al2O3陶瓷,球料比为2∶1,在转速200r/min工况下,球磨30小时制得混合浆料。
步骤三:粉末干燥与过筛
将上述混合浆料置于干燥炉内烘干至溶剂残余量≤1%,然后碾碎、过筛,得到颗粒尺寸≤250μm的混合粉末。
步骤四:烧结粉末
将步骤三所得的混合粉末称取60g装入直径为Φ30mm的石墨烧结模具中进行放电等离子一步烧结,烧结电流类型为直流脉冲电流,其中烧结压力为30MPa,烧结温度为1900℃,升温速率为50℃/min,烧结过程不保温,真空度为4Pa。
通过以上方法制备出,所得碳化钨复合材料含氧化铝颗粒的质量百分比约为0.5%;原位自生β-Si3N4晶须的质量百分比约为0.4%,其余为碳化钨以及不可避免的杂质相。上述无粘结相含氧化铝颗粒与氮化硅晶须的碳化钨复合材料,其硬度为HV1023.20GPa,断裂韧性为5.45MPa·m1/2,材料基体的晶粒尺寸为800~1000nm;材料体内β-Si3N4晶须的长径比为4~5。
实施例5
含氧化铝颗粒与氮化硅晶须的碳化钨复合材料的制备方法包括如下步骤及其工艺条件:
步骤一:备料
将WC、Al2O3、a-Si3N4粉末按下述质量百分比用量进行配比:WC 87%,Al2O33%,a-Si3N410%,其余为不可避免的微量杂质;WC粉末纯度≥99.9%、粒度约600nm,Al2O3粉末纯度≥99.9%、粒度1~2μm,a-Si3N4粉末表面氧含量为3~5wt.%,粒度6~8μm。
步骤二:粉末分散与混合
将上述原料粉末浸没于水中,进行超声震荡加机械搅拌,使团聚粉末分散,再将所得浆料进行湿式低能球磨,所用球磨机为行星式,球磨礶(500mL)与磨球材质为Al2O3陶瓷,球料比为2∶1,在转速200r/min工况下,球磨30小时制得混合浆料。
步骤三:粉末干燥与过筛
将上述混合浆料置于干燥炉内烘干至溶剂残余量≤1%,然后碾碎、过筛,得到颗粒尺寸≤250μm的混合粉末。
步骤四:烧结粉末
将步骤三所得的混合粉末称取60g装入直径为Φ30mm的石墨烧结模具中进行放电等离子一步烧结,烧结电流类型为直流脉冲电流,其中烧结压力为50MPa,烧结温度为1550℃,升温速率为300℃/min,保温时间为20min,真空度为3Pa。
通过以上方法制备,所得碳化钨复合材料含氧化铝颗粒的质量百分比约为3%;原位自生β-Si3N4晶须的质量百分比约为10%,其余为碳化钨以及不可避免的杂质相。上述无粘结相含氧化铝颗粒与氮化硅晶须的碳化钨复合材料,其硬度为HV1017.56GPa,断裂韧性为7.62MPa·m1/2,材料基体的晶粒尺寸为600~800nm;材料体内β-Si3N4晶须的长径比为5~6。
实施例6
含氧化铝颗粒与氮化硅晶须的碳化钨复合材料的制备方法包括如下步骤及其工艺条件:
步骤一:备料
将WC、Al2O3、a-Si3N4粉末按下述质量百分比用量进行配比:WC 90%,Al2O32%,a-Si3N48%,其余为不可避免的微量杂质;WC粉末纯度≥98.7%、粒度约100nm,Al2O3粉末纯度≥99.9%、粒度1~2μm,a-Si3N4粉末表面氧含量为3~5wt.%,粒度0.5~0.8μm。
步骤二:粉末分散与混合
将上述原料粉末浸没于水中,进行超声震荡加机械搅拌,使团聚粉末分散,再将所得浆料进行湿式低能球磨,所用球磨机为行星式,球磨礶(500mL)与磨球材质为Al2O3陶瓷,球料比为2∶1,在转速200r/min工况下,球磨30小时制得混合浆料。
步骤三:粉末干燥与过筛
将上述混合浆料置于干燥炉内烘干至溶剂残余量≤1%,然后碾碎、过筛,得到颗粒尺寸≤250μm的混合粉末。
步骤四:烧结粉末
将步骤三所得的混合粉末称取60g装入直径为Φ30mm的石墨烧结模具中进行热压一步烧结,其中烧结压力为30MPa,烧结温度为1550℃,升温速率为5℃/min,保温时间为120min,真空度为4Pa。
通过以上方法制备,所得碳化钨复合材料含氧化铝颗粒的质量百分比约为2%;原位自生β-Si3N4晶须的质量百分比约为7%,其余为碳化钨以及不可避免的杂质相。上述无粘结相含氧化铝颗粒与氮化硅晶须的碳化钨复合材料,其硬度为HV1018.20GPa,断裂韧性为6.58MPa·m1/2,材料基体的晶粒尺寸为200~1000nm;材料体内β-Si3N4晶须的长径比为4~5。
Claims (3)
1.含氧化铝颗粒与氮化硅晶须的碳化钨复合材料,其特征在于:所述碳化钨复合材料含Al2O3颗粒与β‐Si3N4晶须,其余为WC以及不可避免的杂质相;所述Al2O3颗粒的质量百分比为0.5~3%;所述β‐Si3N4晶须为由α‐Si3N4原位自生晶须,其晶须的长径比≥3,其质量百分比为0.4~10%;
所述含氧化铝颗粒与氮化硅晶须的碳化钨复合材料,其制备方法包括如下步骤及其工艺条件:
步骤一:备料
将WC、Al2O3、α‐Si3N4粉末按下述质量百分比配比原料粉末:WC87~99%,Al2O30.5~3%,颗粒为0.5~10μm的α‐Si3N40.5~10%,其余为不可避免的微量杂质;
步骤二:粉末分散与混合
将上述原料粉末置于有机或无机溶剂中,采用强制手段使团聚粉末分散,再将所得浆料进行湿式低能球磨,制得混合浆料;
步骤三:粉末干燥与过筛
将上述混合浆料置于干燥炉内烘干至溶剂残余量≤1%,然后碾碎、过筛,得到颗粒尺寸≤250μm的混合粉末;
步骤四:烧结粉末
采用放电等离子烧结或热压烧结技术对上述混合粉末进行成型和烧结;
所述放电等离子烧结为一步烧结工艺或两步烧结工艺,所述一步烧结工艺条件如下:
烧结电流类型为直流脉冲电流,
烧结压力:30~70MPa,
烧结升温速率:50~300℃/min,
烧结温度:1550~1900℃,
烧结保温时间:0~20min,
烧结真空度:≤4Pa;
所述两步烧结工艺条件如下:
第一步:
烧结电流类型为直流脉冲电流,
烧结压力:30~70MPa,
烧结升温速率:50~300℃/min,
烧结温度:1550~1900℃,
烧结保温时间:0~20min,
烧结真空度:≤4Pa;
第二步:
烧结电流类型为直流脉冲电流,
烧结压力:30~70MPa,
降温速率:50~300℃/min,
烧结温度:1350~1550℃,
烧结保温时间:0~20min,
烧结真空度:≤4Pa;
所述热压烧结为一步烧结工艺或两步烧结工艺,所述一步烧结工艺条件如下:
烧结压力:30~70MPa,
烧结升温速率:5~20℃/min,
烧结温度:1550~1900℃,
烧结保温时间:0~120min,
烧结气氛:真空度≤4Pa或0.1MPa的N2气氛保护;
所述两步烧结工艺条件如下:
第一步:
烧结压力:30~70MPa,
烧结升温速率:5~20℃/min,
烧结温度:1550~1900℃,
烧结保温时间:0~120min,
烧结气氛:真空度≤4Pa或0.1MPa的N2气氛保护;
第二步:
烧结压力:30~70MPa,
降温速率:5~20℃/min,
烧结温度:1350~1550℃,
烧结保温时间:0~120min,
烧结气氛:真空度≤4Pa或0.1MPa的N2气氛保护。
2.根据权利要求1所述的含氧化铝颗粒与氮化硅晶须的碳化钨复合材料,其特征在于:含氧化铝颗粒与氮化硅晶须的碳化钨复合材料的制备方法中所述Al2O3与α‐Si3N4的质量比≥1/10。
3.根据权利要求1所述的含氧化铝颗粒与氮化硅晶须的碳化钨复合材料,其特征在于:含氧化铝颗粒与氮化硅晶须的碳化钨复合材料的制备方法中所述有机溶剂为乙醇,无机溶剂为水;所述强制手段是指超声震荡和机械搅拌协同作用下实施团聚粉末分散。
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