CN102369787A - Film forming device, film forming method, and organic EL element - Google Patents
Film forming device, film forming method, and organic EL element Download PDFInfo
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- CN102369787A CN102369787A CN2010800147449A CN201080014744A CN102369787A CN 102369787 A CN102369787 A CN 102369787A CN 2010800147449 A CN2010800147449 A CN 2010800147449A CN 201080014744 A CN201080014744 A CN 201080014744A CN 102369787 A CN102369787 A CN 102369787A
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- container handling
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- 238000000034 method Methods 0.000 title abstract description 21
- 230000007246 mechanism Effects 0.000 claims abstract description 125
- 238000007740 vapor deposition Methods 0.000 claims abstract description 85
- 239000011368 organic material Substances 0.000 claims abstract description 65
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 61
- 150000001340 alkali metals Chemical class 0.000 claims abstract description 61
- 238000012545 processing Methods 0.000 claims abstract description 35
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 31
- 230000015572 biosynthetic process Effects 0.000 claims description 74
- 239000012044 organic layer Substances 0.000 claims description 72
- 239000000463 material Substances 0.000 claims description 41
- 238000002309 gasification Methods 0.000 claims description 21
- 239000007769 metal material Substances 0.000 claims description 18
- 229910052792 caesium Inorganic materials 0.000 claims description 6
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 5
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 5
- 238000003475 lamination Methods 0.000 claims description 5
- 229910052700 potassium Inorganic materials 0.000 claims description 5
- 239000011591 potassium Substances 0.000 claims description 5
- 229910052701 rubidium Inorganic materials 0.000 claims description 5
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims description 5
- 229910052708 sodium Inorganic materials 0.000 claims description 5
- 239000011734 sodium Substances 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 62
- 239000007921 spray Substances 0.000 abstract description 19
- 230000006866 deterioration Effects 0.000 abstract description 17
- 230000008569 process Effects 0.000 abstract description 8
- -1 lithium Chemical class 0.000 abstract description 3
- 239000006200 vaporizer Substances 0.000 abstract 2
- 230000008016 vaporization Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 206
- 229910052751 metal Inorganic materials 0.000 description 115
- 239000002184 metal Substances 0.000 description 115
- 238000009740 moulding (composite fabrication) Methods 0.000 description 107
- 239000010410 layer Substances 0.000 description 48
- 239000007789 gas Substances 0.000 description 45
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 40
- 229910052786 argon Inorganic materials 0.000 description 20
- 239000012535 impurity Substances 0.000 description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- 239000002585 base Substances 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 14
- 229910052709 silver Inorganic materials 0.000 description 14
- 238000002347 injection Methods 0.000 description 13
- 239000007924 injection Substances 0.000 description 13
- 239000004332 silver Substances 0.000 description 13
- 230000003647 oxidation Effects 0.000 description 12
- 238000007254 oxidation reaction Methods 0.000 description 12
- 238000001704 evaporation Methods 0.000 description 11
- 230000008020 evaporation Effects 0.000 description 11
- 239000004411 aluminium Substances 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 238000005530 etching Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 5
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- 230000005540 biological transmission Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 229910001947 lithium oxide Inorganic materials 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 238000002203 pretreatment Methods 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
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- 238000005859 coupling reaction Methods 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- SZVJSHCCFOBDDC-UHFFFAOYSA-N iron(II,III) oxide Inorganic materials O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052752 metalloid Inorganic materials 0.000 description 2
- 150000002738 metalloids Chemical class 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 229920001955 polyphenylene ether Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 206010027146 Melanoderma Diseases 0.000 description 1
- 101000574352 Mus musculus Protein phosphatase 1 regulatory subunit 17 Proteins 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
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- 238000010276 construction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
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- 231100000719 pollutant Toxicity 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
In order to prevent the deterioration of a metallic layer that forms the electron-injecting layer of an organic EL element, a film forming device (PM1) is equipped with a processing container (100) that carries out desired processes upon a substrate therewithin; a vapor deposition source (200) (a first vapor deposition source) that stores organic materials, and heats and vaporizes the stored organic materials; first spray mechanisms (120a-120f) that are contained within the processing container (100) and connected to the vapor deposition source (200), and sprays the organic materials vaporized in the vapor deposition source (200) towards the substrate (G) in the processing container; a vaporizer (300) (a second vapor deposition source) that stores an alkali metal such as lithium, and heats and vaporizes the stored alkali metal; and a second spray mechanism (130) that is contained within the processing container (100) and connected to the vaporizer (300), and sprays the alkali metal vaporized in the vaporizing device (300) towards the substrate (G) in the processing container.
Description
Technical field
The present invention relates to film formation device, film build method and organic EL, say in more detail, relate to the organic EL membrane structure that comprises and the film formation device and the film build method that are used to form above-mentioned membrane structure.
Background technology
In recent years, utilization is adopted organic compound and the OLED display of its luminous organic EL (Organic Electroluminescence) element is gazed at.This organic EL has characteristics such as self is luminous, reaction speed is fast, consumes electric power is low.Therefore, compare image with LCD not only very beautiful, and do not need backlight, can be slimly, and especially expectation is applied in the display part of portable machine etc.
Organic EL is formed on the glass substrate, has the sandwich construction that organic layer is clipped by anode layer (positive pole) and cathode layer (negative pole).When this organic EL applied several V voltages and electric current is flowed from the outside, electronics was injected into organic layer from cathode side, and the hole is injected into organic layer from anode-side.Through injecting electronics and hole, organic-material vapor becomes excited state, but when electronics and hole-recombination and the organic-material vapor that is excited were got back to original ground state, its energy remaining was emitted with light.
In the time of with electron injecting organic layer,, then can make high performance organic EL if can make electronics injection obstacle reduction and electronics is injected organic layer efficiently from cathode side.Therefore, generally form the electron injecting layer that forms by the low materials such as alkali metal of work function at the interface of organic layer and negative electrode.(for example with reference to non-patent literature 1).
In non-patent literature 1, announced: the organic layer after forming doping metals between each negative electrode and the emitter layer.As dopant metal, for example lithium (Li), strontium (Sr) and samarium (Sm) can be arranged for example.
The prior art document
Patent documentation
Non-patent literature 1: " Bright organic electroluminescent devices having a metal-dopedelectron-injecting layer " " 1998 American Institute of Physics; Applied Physics Letters; VOLUME 73; NUMBER 20,16NOVEMBER 1998
Summary of the invention
The problem that invention will solve
So alkali metal is because work function is little preferred as the material that forms electron injecting layer.But, on the other hand because alkali metal is the high activity class, so even in the process chamber of high vacuum state also easily with reactions such as indoor residual moisture, nitrogen, oxygen.Therefore, when existing under the state of such impurity on the surface of the organic layer of the substrate that becomes electron injecting layer,, and become for example lithia (Li in metal and impurity reactions such as its interface lithiums with the electron injecting layer film forming
2O) insulants etc., film produces deterioration.Therefore, consider in the prior art that metal such as lithium is changed to insulants such as lithia, adopt the film method of film forming as thin as a wafer that makes lithium.But, even like this, the film that has a lithium very during the unfertile land film forming internal homogeneity of film degenerate, produce the problems such as deviation of the performance of organic EL.
Therefore, in order to address the above problem, the present invention provide the metal level that prevents to form electron injecting layer deterioration, and can improve film formation device, film build method and the organic EL of same layer electron injection efficiency.
The means of dealing with problems
That is,,, a kind of film formation device is provided, possesses according to certain mode of the present invention in order to address the above problem: container handling, on handled object, implement required processing in inside; First vapor deposition source, it takes in organic material, and the organic material of being taken in heated makes its gasification; The first ejection mechanism, it is built in above-mentioned container handling and links with above-mentioned first vapor deposition source, will be in the handled object ejection of the vaporized organic material of above-mentioned first vapor deposition source in above-mentioned container handling; Second vapor deposition source, it takes in the alkali metal material, and the alkali metal material of being taken in heated makes its gasification; The second ejection mechanism, it is built in above-mentioned container handling and links with above-mentioned second vapor deposition source, will be in the handled object ejection of the vaporized alkali metal material of above-mentioned second vapor deposition source in above-mentioned container handling.
Have thus: will spray mechanism and will spray mechanism in first of the handled object ejection of the vaporized organic material of first vapor deposition source in container handling in second of the handled object ejection of the vaporized alkali metal of second vapor deposition source in above-mentioned container handling.The first ejection mechanism that like this, then sprays the material steam of organic material sprays mechanism with second of the alkali-metal gasification atom of ejection and is configured in the container handling.Like this, then after the film forming of organic layer,, can in same chamber, make the alkali metal layers film forming not with the processing unit conveyance of handled object to other.Thus, can avoid impurity such as surface attachment moisture, nitrogen, oxygen at organic layer.Thus, can prevent the deterioration of alkali metal layers and the film that becomes insulant etc. attached to the impurity reaction on the surface of organic layer, oxidation.Consequently, electron injection efficiency can be improved, high performance organic EL can be made.
In addition, as above-mentioned owing to can prevent the deterioration of alkali metal layers, so compared with prior art can make film than the heavy back film forming.For example, can make the thickness film forming of alkali metal layers at 0.5nm～100nm.Through making the thickness film forming of alkali metal layers, can suppress the deviation of the performance of organic EL in certain degree.In addition,, alkali metal layers is worked as electron injecting layer, can also work as the negative electrode of organic EL through alkali metal layers being set at the thickness of certain degree.
But,, after the alkali metal layers film forming, need immediately through diaphragms such as silicon oxidation nitride film such as metal, resin or SiN protection alkali metal layers in order to prevent reactions such as active alkali metal layers and the residual moisture in the container handling, nitrogen, oxygen.
Therefore, film formation device can also have: the 3rd vapor deposition source, and it is taken in diaphragm and uses material, and the diaphragm that will be taken in heats with material and makes its gasification; The 3rd ejection mechanism, it is built in above-mentioned container handling and links with above-mentioned the 3rd vapor deposition source, will be at the vaporized diaphragm of above-mentioned the 3rd vapor deposition source with the handled object ejection of material in above-mentioned container handling.
Also can also have the sputter equipment that is built in above-mentioned container handling, the target that is formed with material by diaphragm is carried out sputter.
Also can possess to carry to put and put platform, put the handled object that platform makes up or perhaps put in vertical year down and move in above-mentioned year from the above-mentioned second ejection mechanism of one side direction of the above-mentioned first ejection mechanism one sideslip to the carrying of handled object of above-mentioned container handling by conveyance.
Also can possess roller, spray mechanism's one side shifting from the above-mentioned first ejection mechanism one side direction above-mentioned second through the film that rotates the roller at above-mentioned two ends, make the roller that is wound on above-mentioned two ends at the two ends of above-mentioned container handling.
Can be at the above-mentioned at least first ejection mechanism one side configuration exhaust apparatus of above-mentioned container handling.
Can between above-mentioned first ejection mechanism and the above-mentioned second ejection mechanism, the next door be set.
Above-mentioned first vapor deposition source is formed by a plurality of crucibles of taking in multiple organic material; The above-mentioned first ejection mechanism is formed by a plurality of ejection portion that is attached at a plurality of crucibles; Spray respectively from a plurality of ejection portion that is arranged at the above-mentioned first ejection mechanism through making, can make lamination that organic layer continuous film forming on handled object of multiple organic material is arranged at the vaporized a plurality of organic materials of above-mentioned a plurality of crucibles.
Above-mentioned alkali metal can be any in lithium, caesium, sodium, potassium and the rubidium.
In addition; In order to address the above problem; According to other modes of the present invention, a kind of film build method is provided: will be incorporated in the organic material heating and the gasification of first vapor deposition source, will spray in container handling from the first ejection mechanism that is attached at above-mentioned first vapor deposition source at the vaporized organic material of above-mentioned first vapor deposition source; Through the above-mentioned organic material that is ejected, in above-mentioned container handling, make organic layer in the handled object film forming; With the alkali metal heating and the gasification that are incorporated in second vapor deposition source; To be sprayed onto in the above-mentioned container handling from the second ejection mechanism that is attached at above-mentioned second vapor deposition source at the vaporized alkali metal of above-mentioned second vapor deposition source; Through the above-mentioned alkali metal that is ejected, in above-mentioned container handling, make metal level film forming on the organic layer of handled object immediately.
At this moment, can make the thickness film forming of above-mentioned metal level at 0.5nm～100nm.Thus, above-mentioned metal level is worked as electron injecting layer and electrode.
Also can be with the diaphragm that is incorporated in the 3rd vapor deposition source with material heating and gasification; To in container handling, spray from the 3rd ejection mechanism that is attached at above-mentioned the 3rd vapor deposition source with material at the vaporized diaphragm of above-mentioned the 3rd vapor deposition source; Use material through the above-mentioned diaphragm that is ejected, in above-mentioned container handling, make diaphragm film forming on the metal level of handled object immediately.
Also can carry out sputter to the target (target) that forms with material by diaphragm by the sputter equipment that is built in above-mentioned container handling; Use material through above-mentioned diaphragm, in above-mentioned container handling, make diaphragm film forming on the metal level of handled object immediately by sputter.
Also can carry out etching to the surface of above-mentioned metal level through being disposed at the outer Etaching device of above-mentioned container handling; By being disposed at the outer sputter equipment of above-mentioned container handling to carrying out sputter with the target that material forms by diaphragm; Use material by above-mentioned diaphragm, outside above-mentioned container handling, make diaphragm film forming on the metal level of handled object immediately by sputter.
Also can carry out etching to above-mentioned layer on surface of metal by being disposed at the outer Etaching device of above-mentioned container handling; Use the material gas activated plasma by being disposed at the outer CVD device of above-mentioned container handling from diaphragm; By the plasma that is excited, outside above-mentioned container handling, make diaphragm film forming on the metal level of handled object immediately.
In addition,,, a kind of organic EL is provided, comprises: the organic layer of film forming on the ITO of handled object according to other modes of the present invention in order to address the above problem; Metal level, it is through making any thickness film forming at 0.5nm～100nm in lithium, caesium, sodium, potassium and the rubidium on above-mentioned organic layer, be used as electron injecting layer and electrode works; Diaphragm with film forming on above-mentioned metal level.
Like this, make organic layer and alkali metal layers film forming continuously, can prevent, reaction such as the residual moisture in alkali metal and the container handling, nitrogen, oxygen and deterioration at the interface of alkali metal layers and organic layer through the same space in container handling.Thus, can make the high-performance organic EL of having kept high electron injection efficiency.
In order to address the above problem, according to other modes of the present invention, a kind of film formation device can be provided, possess: container handling, on handled object, implement required processing in inside; First vapor deposition source, it takes in organic material, organic material heating and the gasification that will be taken in; The first ejection mechanism, it is built in above-mentioned container handling and links with above-mentioned first vapor deposition source, will be in the handled object ejection of the vaporized organic material of above-mentioned first vapor deposition source in above-mentioned container handling; First sputter equipment, it is built in above-mentioned container handling, and the target that is formed by the alkali metal material is carried out sputter; With second sputter equipment, it is built in above-mentioned container handling, to carrying out sputter by diaphragm with the target that material forms.
Can be at the above-mentioned at least first ejection mechanism one side configuration exhaust apparatus of above-mentioned container handling.
Can between above-mentioned first ejection mechanism and above-mentioned first sputter equipment, dispose the next door.
The effect of invention
As described above, according to the present invention, can prevent to form the deterioration of the metal level of electron injecting layer, can improve electron injection efficiency with layer.
Description of drawings
[Fig. 1] is the summary pie graph of the base plate processing system of the 1st～the 4th execution mode and its variation.
[Fig. 2] is the figure of an example of manufacturing process of the organic EL of an expression execution mode of the present invention.
[Fig. 3] is the longitudinal section of the film formation device PM1 of the 1st execution mode.
[Fig. 4] is the organic EL that forms is handled in expression through 6 layers of continuous film forming of the 1st～the 4th execution mode figure.
[Fig. 5] is the longitudinal section of film formation device PM1 of the variation of the 1st execution mode.
[Fig. 6] is the longitudinal section of the film formation device PM1 of the 2nd execution mode.
[Fig. 7] is the longitudinal section of the film formation device PM1 of the 3rd execution mode.
[Fig. 8] is the longitudinal section of film formation device PM1 of the variation of the 3rd execution mode.
[Fig. 9] is the longitudinal section of the film formation device PM1 of the 4th execution mode.
Embodiment
Below each execution mode that present invention will be described in detail with reference to the accompanying.And, in following explanation and accompanying drawing,, omit repeat specification through giving prosign to composed component with same formation and function.
In addition, according to the order explanation shown in following.
[1] first execution mode
The integral body of [1-1] base plate processing system constitutes
The inside of [1-2] film formation device constitutes
The variation of [1-3] the 1st execution mode
[2] the 2nd execution modes
The inside of [2-1] film formation device constitutes
[3] the 3rd execution modes
The inside of [3-1] film formation device constitutes
The variation of [3-2] the 3rd execution mode
[4] the 4th execution modes
[1] the 1st execution mode
The integral body of [1-1] base plate processing system constitutes
At first, explain that with reference to Fig. 1 the integral body of the base plate processing system that contains film formation device of the 1st execution mode constitutes.Organic EL is made in the base plate processing system Sys of cluster-type for example as shown in Figure 1.
In base plate processing system Sys, a plurality of container handlings are attached at the side of trooping.In fact, base plate processing system Sys has: load lock apparatus LLM (Load Lock Module), carrying device TM (Transfer Module), cleaning device (pre-treatment chamber) CM (Cleaning Module), film formation device PM1 (Process Module), Etaching device PM2, CVD (Chemical Vapor Deposition: chemical vapor deposition forming thin film method) device PM3 and sputter equipment PM4.Film formation device PM1 is equivalent in same container handling, make organic layer and the alkali metal layers film formation device of film forming continuously.
Load lock apparatus LLM be for will be from atmosphere by the glass substrate G of conveyance (to call substrate G in the following text) conveyance to the carrying device TM of decompression state and make inside remain on the vacuum carrying room of decompression state.Set the carrying arm Arm that can bend and stretch with revolvable multi-joint shape at the substantial middle place of carrying device TM.Initial use carrying arm Arm with substrate G from load lock apparatus LLM conveyance to cleaning device CM.Form ITO (Indium Tin Oxide) at substrate G, remove attached to its surperficial pollutant (being mainly organic substance) at cleaning device CM as anode layer.
Fig. 2 representes the manufacturing process of organic EL.Shown in Fig. 2 (a), move into the substrate G that has cleaned at film formation device PM1.At film formation device PM1, shown in Fig. 2 (b), make 6 layers organic layer 20 film forming continuously on the ITO surface of substrate through vapor deposition.After the organic layer film forming,, shown in Fig. 2 (c), make metal level 30 film forming through vapor deposition immediately at same film formation device PM1.In the film forming of metal level 30, utilize gasifier.Form the low alkali metal of the preferred work function of metal of metal level 30, especially in preferred, lithium, caesium, sodium, potassium or the rubidium any.Consider that these alkali metal are high activity class and instability, especially be difficult to realize internal homogeneity under the situation of film, in this execution mode, in the same space of film formation device PM1, make organic layer 20 and metal level 30 continuous film formings.To this, in this execution mode, detail at the back as example as alkali-metal situation to use lithium.
Then, substrate G is grasped by the arm Arm of carrying device TM, and conveyance is to Etaching device PM2.At Etaching device PM2, shown in Fig. 2 (d), soft etching is carried out on the surface of metal level 30, remove impurity attached to the surface of metal level 30.Afterwards, substrate G is grasped by the arm Arm of carrying device TM, and conveyance is to sputter equipment PM4.At sputter equipment PM4, through to the diaphragm that carries out sputter by diaphragms such as aluminium or silver with the target that material forms, make flying out atom lamination on metal level 30 with material.Thus, shown in Fig. 2 (e), on metal level 30, make diaphragm 40 film forming.
When taking out light,, need to form thin metal level 30 owing to need make light transmission at metal level 30 from the top of laminated film.At this moment, because metal level 30 is films, can not carry out the soft etched situation shown in Fig. 2 (d) so exist.Thus, can form the such transparent oxide film of ITO film on the surface of metal level 30, so that it is also passable not carry out soft etching.
In the film forming of diaphragm 40, also can use CVD device PM3 to replace sputter equipment PM4.At this moment, also shown in Fig. 2 (d), at first, soft etching is carried out on the surface of metal level 30, removed impurity attached to the surface of metal level 30.Afterwards, CVD device PM3 is arrived in substrate G conveyance.In CVD device PM3, use the material gas activated plasma from diaphragm, on the metal level of substrate G, make diaphragm 40 film forming through the plasma that is excited.Thus, also shown in Fig. 2 (e), on metal level 30, make diaphragm 40 film forming.And CVD device PM3 can be capacitive coupling type (parallel flat) plasma processing apparatus, inductance coupling high type (ICP:Inductively Coupled Plasma) plasma processing apparatus, ECR (Electron Cyclotron Resonance), microwave plasma processing apparatus equal excitation gas generation plasma and use the plasma that generates to make the device of substrate G film forming.
(controller)
The Be Controlled device 50 that respectively installs of base plate processing system Sys is controlled.Particularly, CPU50c uses data and the control program that is stored in ROM50a, RAM50b, generates to be used for the interior conveyance of control basal plate treatment system Sys and the drive signal of operation.Input and output I/F50d will be outputed to base plate processing system Sys by the drive signal that CPU50c generates, and corresponding therewith input is passed to CPU50c from the answer signal of base plate processing system Sys output.
The inside of [1-2] film formation device constitutes
Then, the inside formation to film formation device PM1 at length describes with reference to Fig. 3.Fig. 3 is the longitudinal section of the film formation device PM1 of this execution mode of medelling ground expression.Film formation device PM1 has container handling 100, as the vapor deposition source 200 of first vapor deposition source, as the gasifier 300 of second vapor deposition source.
Container handling 100 is cuboids, puts 110,6 first of platforms and sprays the 120a～120f of mechanism, 1 second ejection mechanism 130, next door 140 and next door 150 in built-in slidable year.At the gate valve 160a that the sidewall setting of container handling 100 can be moved into substrate G, take out of through switch, 160b.
Carry and to put platform 110, through the high voltage that illustrated high-voltage power supply never applies, the substrate G that Electrostatic Absorption is moved into from gate valve 160a.Carry and to put platform 110, carrying down under the state of putting substrate G like this, move towards the second ejection mechanism, 130 1 sideslips from the first ejection 120a of mechanism, one side being arranged on the track 110a of ceiling.Thus, substrate G moves the overhead slightly parallel of each ejiction opening according to the order of the first ejection 120a of mechanism, 120b, 120c, 120d, 120e, 120f, the second ejection mechanism 130.
The first ejection 120a～120f of mechanism, shape is all identical with structure, is parallel to each other and equally spaced configuration.The first ejection 120a～120f of mechanism, its inside is the rectangular shape of hollow (cushion space S), from being arranged at the opening ejection organic-material vapor of its center upper portion.The bottom of the first ejection 120a～120f of mechanism is linked to vapor deposition source 200 through first gas supply pipe 170a～170f of the diapire of perforation container handling 100.
The second ejection mechanism 130 is set with in the same space of container handling 100, leaving the first ejection 120f of mechanism a little.The bottom of the second ejection mechanism 130 links with gasifier 300 through second gas supply pipe 180 of the diapire of perforation container handling 100.Control is set by the valve V1 of conveyance to supply, disconnection and the flow of the organic material of handling container one side and alkali metal material, V2 respectively at the first gas supply pipe 170a～170b and second gas supply pipe 180.
The next door 140,150 that each ejection mechanism is separated is set in the both sides of the first ejection 120a～120f of mechanism and the second ejection mechanism 130.Thus, can prevent from the various organic materials of ejiction opening ejection and the sneaking into of alkali metal material of the first adjacent ejection 120a～120f of mechanism and the second ejection mechanism 130.
In the first ejection 120a of mechanism of container handling 100 side exhaust outlet 190a is set.When driving is connected the exhaust apparatus 195a of exhaust outlet 190a, be ejected outside the container handling from exhaust outlet 190a from the residue of the organic material of the first ejection 120a of the mechanism～120f ejection.In addition, the second ejection mechanism, 130 1 sides at container handling 100 are provided with exhaust outlet 190b.When driving is connected the exhaust apparatus 195b of exhaust outlet 190b, be ejected outside the container handling from exhaust outlet 190b from the residual atom of the alkali metal material steam of the second ejection mechanism 130 ejection.Especially, through in the film forming of vapor deposition, while the gasification atom flies in container handling, spreads and arrive substrate G and be used to film forming.Even also exist the gas atom that temporarily is adsorbed on substrate G also to leave situation about in container handling, flying once more from substrate G.Like this, through in the film forming of vapor deposition, gasification atom tendency in the scope diffusion of non-constant width in container handling is very strong.
Thus, through carrying out exhaust, can suppress organic-material vapor and fly to second ejection mechanism's 130 1 sides and the pick-up metal layer 30 from the residual organic-material vapor of the first ejection 120a of mechanism one side.In addition, through carrying out exhaust, can suppress lithium and fly to the first ejection 120a～120f of mechanism one side and sneak into organic layer 20 from the second ejection mechanism's 130 1 sides residual lithium.Can only drive exhaust apparatus 195a in the film forming of organic layer 20; Make residual organic-material vapor not fly 130 1 sides to the second ejection mechanism; Can only drive exhaust apparatus 195b in the film forming of metal level 30, make residual lithium not fly one side to the first ejection 120a～120f of mechanism.In the film forming, in the container handling through drive each exhaust apparatus 195a, 195b is maintained at 10
-2Pa～10
-3Decompression state about Pa.
At vapor deposition source 200 built-in shapes 6 the crucible 210a～210fs identical with structure.Each crucible 210a～210f takes in different organic material A～F respectively in inside.Imbed heater 220a～220f respectively at the container bottoms of taking in organic material A～F respectively.Through difference heater 220a～220f, make crucible 210a～210f reach the high temperature about 200～500 ℃, control the gasification rate of organic material A～F thus.And gasification is not the phenomenon that liquid becomes gas, also comprises solid directly becomes gas without the state of liquid phenomenon (that is distillation).
The gas piping of supplying with argon Ar is set at crucible 210a～210f.Supply to the argon gas in the crucible 210f from gas piping; To be emitted in the inside of container handling 100 from the ejiction opening of the first ejection 120a～120f of mechanism at the vaporized organic-material vapor A～F of each crucible 210a～210f through first gas supply pipe 170a～170b conveyance to the first ejection 120a～120f of mechanism.In vapor deposition source 200 exhaust outlet 230 is set.Through driving exhaust apparatus 240, make and maintain required vacuum degree in the container handling.
First gas supply pipe 170a～170f that argon gas and organic-material vapor are passed through also is adjusted to the temperature more than 200 ℃ with crucible identically.Thus, in the time of preventing organic-material vapor by the argon gas conveyance, attached to last and liquefaction such as first gas supply pipe 170a～170f.Thus, can improve material efficiency when making organic layer 20 film forming.
At the outer setting of container handling 100 heating lithium and make the gasifier 300 of its gasification.Set inside at gasifier 300 can be taken in alkali-metal container for evaporation Ds1 such as lithium.Connect power supply Ds2 at container for evaporation Ds1.Drive signal according to slave controller 50 outputs applies required voltage at power supply Ds2, and predetermined electric current flows at container for evaporation Ds1.Thus, container for evaporation Ds1 is heated and remains on required temperature.Do like this, can adjust the evaporation capacity of the lithium that is accommodated in container for evaporation Ds1.And, if be accommodated in the low alkali metal material of the material work function of container for evaporation Ds1, then also can be any of lithium, sodium, potassium, rubidium, caesium etc.
In addition, gasifier 300 is attached at argon gas feed source 320 through the mass flow controller MFC and the valve V4 of the flow of adjustment gas.Through drive signal control of quality stream controller MFC and valve V4, regulate supply, disconnection and the flow of argon gas according to slave controller 50 outputs.
Thus, the lithium of evaporation in gasifier 300, by conveyance to the second ejection mechanism 130, is emitted in container handling from ejiction opening through second gas supply pipe 180 as carrier gas with the argon gas that is admitted to the ormal weight in the gasifier 300.And, as from the alkali-metal machine of the second ejection mechanism, 130 ejections, be not limited to above-mentioned gasifier 300, the mechanism that also can use the alkali metal monomer directly to evaporate and spray.
Second gas supply pipe 180 that argon gas and organic-material vapor are passed through is adjusted to the temperature more than 200 ℃ with gasifier 300.Thus, when evaporation rate and the lithium of control lithium is by the argon gas conveyance, can prevent to adhere to and liquefy in second gas supply pipe, 180 grades.Thus, the material efficiency in the time of improving metal level 30 film forming.
And, in order to make metal level 30 film forming, replace gasifier 300, can use the vapor deposition source with the identical formation of using in order to make organic layer 20 film forming of crucible, also can be heaters such as resistance heating plate.
According to the film formation device PM1 of above explanation, form organic layer 20 by organic-material vapor from the first ejection 120a of mechanism～120f ejection, afterwards, form organic layer 20 continuously by organic-material vapor from 130 ejections of the second ejection mechanism.
Particularly; Among the organic-material vapor of the first ejection 120a of the mechanism～120f ejection, at first, from the organic-material vapor of the first ejection 120a of the mechanism ejection attached to the ITO (anode) on the substrate G that advances with certain speed above the ejection 120a of mechanism; Thus; As shown in Figure 4, pile up at substrate G through organic-material vapor A from the first ejection 120a of the mechanism ejection, on substrate, form the ground floor hole injection layer.Then; When substrate G moves to the first ejection 120f of mechanism in order from the first ejection 120b of mechanism; Pile up at substrate G respectively from the organic-material vapor B～F of the first ejection 120b of mechanism～120f ejection, order forms organic layer (the 2nd layer～the 6th layer) thus.At last, pile up at substrate G, form metal level 30 through the lithium of emitting from the second ejection mechanism 130.
Do like this, in same processing unit, carry out film forming continuously, can prevent the deterioration of organic layer 20 and metal level 30 through making organic layer 20 and metal level 30.This is carried out bright specifically.Alkali metal such as lithium and caesium is because work function is little, so preferred material as the electron injecting layer that forms organic EL.But, on the other hand because alkali metal is the high activity class, though in the process chamber of high vacuum state also easily with reactions such as indoor residual moisture, nitrogen, oxygen.Therefore; Be present at such impurity under the state on surface of organic layer 20 of the substrate that becomes metal level 30, if above that during metal level 30 film forming, in organic layer 20 and the alkali metal of the interface film forming of metal level 30 and impurity reaction attached to organic layer; For example, become lithia (Li
2O) insulants etc. produce deterioration at metal level 30.Therefore, consider in the prior art that alkali metal such as lithium are changed to the situation of insulant, the film of taking to make lithium is the method for unfertile land film forming very.But, even so, still exist make lithium film very the internal homogeneity variation of film during the unfertile land film forming, produce the problems such as deviation of the performance of organic EL.
To this, in the film formation device PM1 of this execution mode, after the film forming of organic layer 20, need before metal level 30 film forming, substrate transferring not arrived other chambers.Thus, impurity becomes very low attached to the probability on the organic layer.Thus, the direct metal level 30 of film forming on organic layer in same container handling, the probability of the materialization of insulating also becomes very low with the impurity reaction at the interface of organic layer 20.Consequently, the electron injection efficiency of metal level 30 can be improved, the light-to-current inversion efficient of organic layer 20 can be improved.
In addition; Film formation device PM1 according to this execution mode; As above-mentioned, owing to metal level 30 is very low in the insulate probability change of materialization of the interface of organic layer 20 and impurity reaction, can make so do not reduce electron injection efficiency alkali-metal film than prior art more heavy back carry out film forming.Therefore,, for example, can make metal level 30 carry out film forming, become the thickness that to manage film formation process at the thickness of 0.5nm～100nm according to this film formation device PM1.Through making metal level 30 carry out film forming at the thickness of certain degree, can improve the internal homogeneity of metal level 30, can suppress the deviation of the performance of organic EL.
And then, carry out film forming through making metal level 30 at the thickness of certain degree, can make the electric polarization of the too thin and impossible electron injecting layer of film in the prior art become possibility.That is to say,, carry out film forming at the thickness of for example 50nm～100nm degree, metal level 30 is worked as electron injecting layer and electrode (negative electrode) through making metal level 30 according to the film formation device of this execution mode.In addition, carry out film forming at certain degree thickness, can absorb its damage through metal level 30, the damage to organic layer 20 that is caused by sputter is lowered for the sputter of the diaphragm of operation afterwards through making metal level 30.
After making metal level 30 film forming, substrate G is by the Etaching device PM2 of conveyance to Fig. 1, and the metal level 30 of the lithium that commute reacts carries out soft etching and cleans its surface (with reference to (d) of Fig. 2).Afterwards, conveyance immediately collides the sputter material that is formed by aluminium A1 and silver-colored Ag to sputter equipment PM4 through the ion that makes argon gas, gets sputtered atom Ag.The sputtered atom Ag that is got is deposited on the metal level 30.Thus, diaphragm 40 film forming shown in Fig. 2 (e).Diaphragm 40 prevents the oxidation of the metal level 30 of high activity class.
When taking out light,, need to form thin metal level 30 owing to need make transmittance at metal level 30 from the top of laminated film.At this moment, because metal level 30 is films, can not carry out the soft etched situation shown in Fig. 2 (d) so exist.Thus, can form the such transparent oxide film of ITO film on the surface of metal level 30, so that it is also passable not carry out soft etching.
And, if diaphragm 40 can be protected the material of the alkali-metal metal level 30 of high activity class, then can also use resin etc. except silver-colored and aluminium.But, when resin is used for diaphragm 40,, use film build method through vapor deposition or CVD owing to can not use film build method through sputter.
Be sidelong from ITO one under the situation of organic EL of bright dipping, preferably use high silver of reflection of light rate and aluminium as diaphragm 40.In addition, because transmittance when diaphragm 40 approaches, so the thickness that diaphragm 40 needs to a certain degree in order to be sidelong bright dipping from ITO one.In addition, at this moment, can not use not catoptrical resin at diaphragm 40.
On the other hand, take out from a side opposite (diaphragm one side) under the situation of organic EL of light, can make silver and aluminium, be used as diaphragm 40, so that the easy transmission of light than the unfertile land film forming with ITO one side.In addition, at this moment, so long as difficult absorbing light and make the resin of the easy transmission of light just can be used for diaphragm 40.
And the thickness through making metal level 30 such as lithium and diaphragms such as aluminium and silver 40 can make optical transmission rate and reflection of light rate optimization for metal level 30 and diaphragm 40 than optimization.
As described above; Film formation device PM1 according to this execution mode; Material steam through from the first ejection 120a of mechanism～organic material that 120f sprays is deposited in substrate G; Form organic layer 20, in the same space, form metal level 30 at substrate G immediately afterwards through alkali-metal gasification atom packing from 130 ejections of the second ejection mechanism.Like this, then after organic layer 20 film forming, substrate G is not removed the processing unit to other, can in same chamber, make metal level 30 film forming.Thus, can avoid impurity such as surface attachment moisture, nitrogen, oxygen at organic layer 20, can prevent metal level 30 with attached to the impurity reaction on the surface of organic layer 20, oxidation and the deterioration of the materialization caudacoria that insulate.Consequently, can make electron injection efficiency height, high performance organic EL.
In addition, owing to can as above-mentioned, prevent the deterioration of metal level 30, so can make metal level 30 thicker than prior art.For example, can make metal level 30 carry out film forming at the thickness of 0.5nm～100nm.Through metal level 30 being set at the thickness of certain degree, metal level 30 is worked as electron injecting layer, can also work as the negative electrode of organic EL.The deviation that can suppress in addition, the performance of organic EL.
The variation of [1-3] the 1st execution mode
The variation of the film formation device PM1 of the 1st execution mode is described with reference to Fig. 5.In the film formation device PM1 of the 1st execution mode, make substrate G carry out film forming with mode down.
To this, in the film formation device PM1 of the variation of the 1st execution mode, carry and put platform 110, as shown in Figure 5, be arranged at the bottom surface of container handling 100.Carry and to put substrate G that platform 110 will move into from gate valve 160a and carry with up state and put.And, if can gas delivery film forming, then become film base material not only can (face up) up, can also (face down) down or towards vertically (side).Carry and to put platform 110 and on the track 110a of the bottom surface that is arranged at container handling, break away moving from the first ejection 120a of mechanism, one side direction, the second ejection mechanism 130 1.Thus, substrate G carries out parallel moving according to the order of the first ejection 120a of mechanism, 120b, 120c, 120d, 120e, 120f, the second ejection mechanism 130 in the sky a little of each ejiction opening.Consequently, identical with the 1st execution mode, organic layer 20 and metal level 30 are continuously by film forming in the inside of same container handling 100.
Thus, can make substrate G implement the film forming processing under the state of putting towards uploading.Thus, even under the situation of large substrate, also can be not with substrate G counter-rotating and easily with its conveyance.In addition, can improve the internal homogeneity that is formed at the film on the substrate.
[2] the 2nd execution modes
The film formation device of the 2nd execution mode then, is described with reference to Fig. 6.And the base plate processing system Sys of the 2nd execution mode is identical with the 1st execution mode, and organic EL is made in cluster-type base plate processing system Sys shown in Figure 1.
The inside of [2-1] film formation device constitutes
In the film formation device PM1 of this execution mode, the vapor deposition of the vapor deposition of organic layer 20, metal level 30 and the film forming of diaphragm 40 are handled in the inside of container handling 100 continuously.Thus; In the film formation device PM1 of this execution mode; Except the vapor deposition source 200 (first vapor deposition source) and the first ejection 120a～120f of mechanism, the gasifier 300 (second vapor deposition source) that is provided with for metal level 30 is carried out vapor deposition and the second ejection mechanism 130 that are provided with for organic layer 20 is carried out vapor deposition to the film formation device PM1 at first execution mode, following sputter equipment 400 is arranged in the container handling set inside.
Particularly, sputter equipment 400 has: target 420a, 420b, backboard (backing plate) 430a, 430b, target support 440a, 440b, magnetic field produce the 450a of mechanism, 450b and gas tip 460.
A pair of target 420a, 420b are parallel mode with sputter face and dispose in opposite directions.Target material 420a, the preferred resistance of 420b is low, light reflectivity is high silver or aluminium are used material as diaphragm.In this execution mode, target 420a, 420b are formed by silver.
A pair of target 420a, 420b are kept by target support 440a, 440b via backboard 430a, 430b.Magnetic field produces the 450a of mechanism, 450b is magnetite in this execution mode, is positioned at the mode that target 420a, the N utmost point be positioned at target 420b at the back side of each target 420a, 420b with the S utmost point and disposes magnetite.Thus, in the space in opposite directions of target 420a, 420b, produce vertical magnetic field at each target 420a, 420b with the mode of surrounding this space.
The argon gas of 320 outputs supplies in the container handling from gas tip 460 from the argon gas feed source.Supply, disconnection and the flow of regulating argon gas through drive signal control of quality stream controller MFC and valve V5 according to slave controller 50 output.
Near sputter equipment 400, be provided with exhaust outlet 480 and the exhaust apparatus 490 that is connected exhaust outlet 480,, target atom remaining in the container handling be vented to the outside through driving exhaust apparatus 490.
The internal pressure of container handling 100 is described here.The internal pressure of container handling 100 has great influence to each film forming.For example, if organic layer 20 reacts then its membranous deterioration with metal level 30 and moisture, nitrogen, oxygen etc.Therefore, the pressure preferred 10 in the container handling during vapor deposition
-2About Pa.Especially, organic layer 20 is sensitive films with metal level 30, and the environment during film forming has a big influence to membranous.For example, pressure in container handling is high, in container handling, exist under the state of a lot of impurity, and reactions such as organic layer 20 films and moisture, generation blackspot etc. makes the light-to-current inversion degradation in efficiency in film, makes the life-span deterioration of organic EL.In addition owing to use high activity metal such as lithiums at metal level 30, so the pressure in container handling high, have under the state of a lot of impurity reaction such as metal level 30 and oxygen and become insulant, the electron injection efficiency deterioration.Therefore, the pressure in making container handling is than 10
-2It is not good method that Pa more carries out vapor deposition to organic layer 20 and metal level 30 under the state of rough vacuum.
In this execution mode, through the pressure in the container handling is maintained 10
-2～10
-3About Pa, be implemented in the film formation device of processing of sputter of vapor deposition, the diaphragm 40 of the vapor deposition that carries out organic layer 20 in the same container continuously, metal level 30.
According to the film formation device PM1 of this execution mode, can prevent the oxidation and the nitrogenize of organic material and alkali metal material, and the ability film forming becomes the organic layer 20 and metal level 30 of high-quality.Meanwhile, can make argon gas carry out plasma igniting, get sputtered atom Ag, thus, can in same chamber, make diaphragm 40 film forming shown in Fig. 2 (e) by the ion of argon gas by the sputter equipment 400 that is arranged in the same process chamber.
Thus, make metal level 30 film forming after, need be with substrate G conveyance to the outside of handling container 100.Consequently, can avoid impurity such as surface attachment moisture, nitrogen, oxygen, can prevent before forming diaphragm 40 on the metal level 30, the impurity reaction in metal level 30 and the container handling, oxidation and the deterioration of film after the materialization of insulating at metal level 30.Like this, through before 30 oxidation of high activity metalloid layer, in same chamber, making diaphragm 40 film forming, can make electron injection efficiency height, high performance organic EL.
In addition, in this execution mode, need not carry out in the 1st execution mode as the pre-treatment of sputter and the soft etched operation of implementing (Fig. 2 (d)).Thus, can improve disposal ability, raising productivity.
And, according to this execution mode, can than prior art more low vacuum 10
-2～10
-3Implement sputter about Pa.Therefore, exhaust efficiency uprises, and the conveyance of substrate G and the required time ratio prior art of processing are shortened.Thus, also can improve disposal ability, raising productivity.
[3] the 3rd execution modes
The film formation device of the 3rd execution mode then, is described with reference to Fig. 7.And the base plate processing system Sys of the 3rd execution mode is identical with the 1st execution mode, and organic EL is made in the base plate processing system Sys of cluster-type shown in Figure 1.
The inside of [3-1] film formation device constitutes
In the film formation device PM1 of this execution mode, handle the vapor deposition of organic layer 20, the vapor deposition of metal level 30 and the vapor deposition of diaphragm 40 continuously in the inside of container handling 100.Thus; In the film formation device PM1 of this execution mode; Except the vapor deposition source 200 (first vapor deposition source) that in the film formation device PM1 of the 2nd execution mode, is provided with and the first ejection 120a～120f of mechanism, metal level 30 is carried out vapor deposition and the gasifier 300 (second vapor deposition source) and the second ejection mechanism 130 that are provided with, also spray mechanism 510 at the following gasifier 500 of container handling set inside (suitable the 3rd vapor deposition source) and the 3rd for organic layer 20 is carried out vapor deposition.
In the outside of container handling 100, except heating lithium and make the gasifier 300 of its gasification, also be provided with the gasifier 500 that makes silver or aluminium gasification.Gasifier 500 links through aperture adjustable valve V6 and vacuum pump 520.Through the aperture according to the drive signal control valve V6 of slave controller 50 output, the inside of gasifier 500 is controlled in required vacuum pressure.
In addition, gasifier 500 is through mass flow controller MFC and the valve V7 and 320 bindings of argon gas feed source of adjustment gas flow.Through drive signal control of quality stream controller MFC and valve V7, regulate supply, disconnection and the flow of argon gas according to slave controller 50 outputs.Gasifier 500 and the 3rd ejection mechanism 510 are linked by the 3rd gas supply pipe 530.At the 3rd gas supply pipe 530 control is set and is arrived the valve V8 of the diaphragm of processing container one side with supply, disconnection and the flow of material by conveyance.
Thus, the aluminium and the silver of evaporation in gasifier 500, with the argon gas that is admitted to the ormal weight in the gasifier 500 as carrier gas, through the inner paths of the 3rd gas supply pipe 520 by conveyance to handling in the container.
Between the second ejection mechanism 130 and the 3rd ejection mechanism 510, be provided with next door 540.In addition, the 3rd ejection mechanism 510 1 sides at container handling 100 are provided with exhaust outlet 550.Exhaust outlet 550 is connected with exhaust apparatus 560.When driving exhaust apparatus 560, be ejected outside the container handling from exhaust outlet 550 from the residual atom of the silver of the 3rd ejection mechanism 510 ejections.
And, in order to make diaphragm 40 film forming, replace gasifier 500, can use vapor deposition source with the identical formation of using in order to make organic layer 20 film forming of crucible.But, because diaphragm is a metal material with material gas, so should be noted that it can not is alloy.
Continuous film forming apparatus according to above explanation; When substrate G moves in the overhead order of the first ejection 120b～120f of mechanism; Be deposited in substrate G respectively from the organic-material vapor A～F of the first ejection 120b of mechanism～120f ejection, order forms organic layer (the 1st layer～the 6th layer) thus.Then, the lithium of emitting from the second ejection mechanism 130 is deposited in substrate G, forms metal level 30 thus.At last, the silver of emitting from the 3rd ejection mechanism 510 is deposited in substrate G, forms diaphragm 40 thus.
Thus, can prevent the oxidation and the nitrogenize of organic material and alkali metal material, and can film forming be the organic layer 20 and metal level 30 of high-quality.In addition, according to the film formation device PM1 of this execution mode,, can on metal level 30, form diaphragm 40 immediately by from being arranged at the silver of the ejection of the 3rd in same process chamber mechanism 510 ejections.
Thus, after metal level 30 film forming, need be with substrate G conveyance to the outside of handling container 100.Consequently, can avoid impurity such as surface attachment moisture, nitrogen, oxygen, can prevent before forming diaphragm 40 on the metal level 30, the impurity reaction in metal level 30 and the container handling, oxidation and the deterioration of the materialization caudacoria that insulate at metal level 30.Do like this,, can make that electron injection efficiency uprises, high performance organic EL through in same chamber, making diaphragm 40 film forming before 30 oxidation of high activity metalloid layer.
In addition, need be in the 1st execution mode as the pre-treatment of sputter and the soft etched operation of implementing (Fig. 2 (d)).Thus, can improve disposal ability, raising productivity.
The variation of [3-2] the 3rd execution mode
In each above execution mode, put platform and put substrate G in 110 years carrying, put platform 110 and slide mobilely through using track 110a to make to carry, make each layer in substrate G film forming continuously.To this; In the variation of the 3rd execution mode; Replacement is carried substrate G to place to carry and put platform 110, and is as shown in Figure 8, and roller 610,620 is set at the two ends of container handling; Through the roller 610,620 at rotation two ends, the film F lm that is wound on the roller 610,620 at two ends sprays mechanism 130, reels to the 3rd ejection mechanism 510 from the first ejection 120a～120f of mechanism, one side warp second.During this, spray organic material A～F, lithium, silver respectively from the first ejection 120a～120f of mechanism, the second ejection mechanism 130, the 3rd ejection mechanism 510, at film F lm in order by vapor deposition.Thus, the same space in container handling can make organic layer 20, metal level 30, diaphragm 40 on film F lm, carry out film forming continuously.Thus, can prevent deterioration in the film forming of organic layer 20 and metal level 30 of sensitive reaction in the atmosphere in film forming.Thus, on film F lm, keep high light-to-current inversion efficient and electron injection efficiency, can make long-life organic EL, and manufacturing cost is reduced through replacing substrate G that film F lm is used to be processed physical efficiency.And, Polyethylene Terephthalate) and PPE (polyphenylene oxide: Polyphenylene Ether) as film F lm, can use PET (polyethylene terephthalate:.
[4] the 4th execution modes
Then, explain that with reference to Fig. 9 the inside of the film formation device of the 4th execution mode constitutes.In the film formation device PM1 of this execution mode, after the vapor deposition of organic layer 20, use 2 different sputter process of 2 different targets in same container handling 100, to carry out continuously.
Concrete processing is described.At first, when organic layer 20 is carried out vapor deposition, be ejected respectively towards substrate from the first ejection 120a～120f of mechanism, implement 6 layers of continuous film forming of organic layer 20 thus at vapor deposition source 200 vaporized organic-material vapors.
Be built-in with the sputter equipment 401 that is used for making metal level 30 film forming on the first ejection 120f of the mechanism next door at container handling 100.And, be built-in with the sputter equipment 402 that is used for making diaphragm 40 film forming on the next door of sputter equipment 401.Because sputter equipment 401 constitutes with sputter equipment 402 main inside, with identical at the sputter equipment 400 of the 2nd execution mode explanation, so omit explanation here.And sputter equipment 401 is equivalent to first sputter equipment, and sputter equipment 402 is equivalent to second sputter equipment.
After organic layer 20 film forming, substrate moves to the below of sputter equipment 401, at this, and metal level 30 film forming that work function is high.Sputter equipment 401, for example the magnesium Mg lamination on substrate through the target that is formed by magnesium Mg being carried out sputter, make being got forms metal level 30.
After metal level 30 film forming, substrate moves to the below of sputter equipment 402, and film forming is as the acting diaphragm 40 of negative electrode.Sputter equipment 402, for example the silver-colored Ag atom lamination on substrate through the target that is formed by silver-colored Ag being carried out sputter, make being got forms diaphragm 40.Also can use aluminium Al at diaphragm 40.In addition, replace sputter equipment 401,402, also can use alkali sending trap (alkali dispenser).
And, on diaphragm 40, form by silicon oxide film SiO
2With the diaphragm seal (not shown) that silicon nitride film SiN etc. forms, thus, can make organic EL.
In the vapor deposition of organic-material vapor,, organic-material vapor arrives substrate while expanding.Otherwise sputtered atom arrives substrate more point-blank.Therefore, organic-material vapor is near more Workflow arrives than sputtered atom.Therefore, organic-material vapor flies to sputter equipment, preferably in organic film forming one side the exhaust gear more than 1 is set at least, the film forming of metal level 30 is not produced bad influence.In this execution mode, at the first ejection 120f of mechanism, one side configuration exhaust apparatus 195b, mainly make from the organic-material vapor of the first ejection 120a of mechanism～120f ejection and carry out exhaust, prevent that organic-material vapor from flying to sputter equipment 401.Next door 410 between the first ejection 120f of mechanism and the sputter equipment 401 prevents that too organic-material vapor from flying to sputter equipment 401.Certainly, their structure prevents that also sputtered atom from flying to organic film forming one side.
According to this execution mode, can prevent the oxidation and the nitrogenize of organic material and alkali metal material etc., and can make organic layer 20, metal level 30 and diaphragm 40 film forming.In this execution mode,, improve the productive manufacturing cost that reduces simultaneously so can be implemented in owing to can in same container handling, implement the formation of vapor deposition, metal level 30 and the diaphragm 40 of organic layer 20 continuously.Especially, through sputter equipment 401,402 is disposed transversely arrangedly, film forming, the different device that can implement different condition continuously constructed, the spatter film forming of different materials, has at same container handling and carries out function separation and the effect of cripetura time.
And, in this execution mode, arrange 2 sputter equipments, also can arrange the sputter equipment more than 3.
As described above, according to each execution mode, can not make the alkali metal oxidation of easy activate etc., and stably make high performance organic El device.
In the above-described embodiment, the action of each several part is interrelated, on one side can consider interrelated, Yi Bian change a series of action.So; Through such conversion, the execution mode of can will be used to making the film formation device of above-mentioned organic EL is set at the execution mode of the film build method that is used to make above-mentioned organic EL and the execution mode of the organic EL that uses above-mentioned film formation device to make.
Above with reference to description of drawings the execution mode that is fit to of the present invention, but the present invention is not limited to relevant example.All those skilled in the art are in the category of claim record, and various change examples or the modification that can expect also belong to technical scope of the present invention certainly.
For example, in the present invention, make alkali metal gasification and film forming, but alkali-metal fusing point is low, can use liquid to supply with continuously.Therefore, in this case, Yi Bian replace above-mentioned gasifier to supply with the characteristic that alkali metal is implemented film forming continuously with liquid on one side have the special container of use.Otherwise, then be difficult to supply with continuously material with above-mentioned gasifier.Therefore,, prepare a plurality of gasifiers, need try every possible means to change each gasifier of use etc. in order to supply with material continuously by gasifier.
In addition, the alkali metal material of the present invention's use can use monomer also can use compound.But, when using compound, need dispose gettering material (getter) at gasifier, make and do not sneak in the film for forming the necessary metal vapors of film material in addition.
In this execution mode, the container handling of film formation device 100 is provided with vapor deposition source 200 in addition, but also can be in a container handling vapor deposition source of built-in each organic material.
In addition, handled object can be the above substrate of 730mm * 920mm, also can be the above silicon wafer of 200mm or 300mm.
In addition, organic layer and work function vapor deposition layer (metal level) are while can be to make mutual material steam be mingled in film forming together.For example, residual organic-material vapor is flown to second ejection mechanism's 130 1 sides and the pick-up metal layer 30 from the first ejection 120a of mechanism, one side.In addition, lithium is flown to the first ejection 120a～120f of mechanism one side and sneak into organic layer 20.
Symbol description
10 ITO
20 organic layers
30 metal levels
40 diaphragms
50 controllers
100 container handlings
Put platform in 110 years
120a～120f first ejection mechanism
130 second ejection mechanisms
140,150,410,540 next doors
195a, 195b, 240,490,560 exhaust apparatus
200 vapor deposition source
300,500 gasifiers
400,401 sputter equipments
420a, 420b target
510 the 3rd ejection mechanisms
610,620 rollers
The G substrate
The Sys base plate processing system
The PM1 film formation device
The PM2 Etaching device
PM3 CVD device
The PM4 sputter equipment
The CM cleaning device
The TM carrying device
The LLM load lock apparatus
The Flm film
Claims (12)
1. a film formation device is characterized in that, comprising:
Container handling is implemented required processing on handled object in inside;
First vapor deposition source, it takes in organic material, and the organic material of being taken in heated makes its gasification;
The first ejection mechanism, it is built in said container handling and links with said first vapor deposition source, will be in the handled object ejection of the vaporized organic material of said first vapor deposition source in said container handling;
Second vapor deposition source, it takes in the alkali metal material, and the alkali metal material of being taken in heated makes its gasification; With
The second ejection mechanism, it is built in said container handling and links with said second vapor deposition source, will be in the handled object ejection of the vaporized alkali metal material of said second vapor deposition source in said container handling.
2. film formation device as claimed in claim 1 is characterized in that also having:
The 3rd vapor deposition source, it is taken in diaphragm and uses material, and the diaphragm that will be taken in heats with material and makes its gasification; With
The 3rd ejection mechanism, it is built in said container handling and links with said the 3rd vapor deposition source, will be at the vaporized diaphragm of said the 3rd vapor deposition source with the handled object ejection of material in said container handling.
3. film formation device as claimed in claim 1 is characterized in that:
Also has the sputter equipment that is built in said container handling, the target that is formed with material by diaphragm is carried out sputter.
4. film formation device as claimed in claim 1 is characterized in that:
Possess to carry to put and put platform to the carrying of handled object of said container handling by conveyance,
Put platform in said year, and made up or carry the handled object of putting down or vertically and break away moving from the said second ejection mechanism one of one side direction of the said first ejection mechanism.
5. film formation device as claimed in claim 1 is characterized in that:
Two ends at said container handling have roller,
Through the said roller at rotation two ends, the film that makes the said roller that is wound onto two ends is from the said second ejection mechanism of one side direction of the said first ejection mechanism one side shifting.
6. film formation device as claimed in claim 1 is characterized in that:
In the said container handling, dispose exhaust apparatus in the said first ejection mechanism one side at least.
7. film formation device as claimed in claim 1 is characterized in that:
Between said first ejection mechanism and the said second ejection mechanism, be provided with the next door.
8. film formation device as claimed in claim 1 is characterized in that:
Said first vapor deposition source is formed by a plurality of crucibles of taking in multiple organic material,
The said first ejection mechanism is formed by a plurality of ejection portion that is attached at a plurality of crucibles,
Through spraying respectively from a plurality of ejection portion that is arranged at the said first ejection mechanism, lamination there is organic layer continuous film forming on handled object of multiple organic material at the vaporized multiple organic material of said a plurality of crucibles.
9. film formation device as claimed in claim 1 is characterized in that:
Said alkali metal material is any in lithium, caesium, sodium, potassium and the rubidium.
10. a film formation device is characterized in that, comprising:
Container handling is implemented required processing on handled object in inside;
First vapor deposition source, it is taken in organic material and the organic material of being taken in is heated and makes its gasification;
The first ejection mechanism, it is built in said container handling and links with said first vapor deposition source, will be in the handled object ejection of the vaporized organic material of said first vapor deposition source in said container handling;
First sputter equipment, it is built in said container handling, and the target that is formed by the alkali metal material is carried out sputter; With
Second sputter equipment, it is built in said container handling, to carrying out sputter by diaphragm with the target that material forms.
11. film formation device as claimed in claim 10 is characterized in that:
In said container handling, dispose exhaust apparatus in the said first ejection mechanism one side at least.
12. film formation device as claimed in claim 10 is characterized in that:
Between said first ejection mechanism and said first sputter equipment, be provided with the next door.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009087744 | 2009-03-31 | ||
| JP2009-087744 | 2009-03-31 | ||
| PCT/JP2010/054675 WO2010113659A1 (en) | 2009-03-31 | 2010-03-18 | Film forming device, film forming method, and organic el element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102369787A true CN102369787A (en) | 2012-03-07 |
Family
ID=42827956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010800147449A Pending CN102369787A (en) | 2009-03-31 | 2010-03-18 | Film forming device, film forming method, and organic EL element |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPWO2010113659A1 (en) |
| KR (1) | KR20110116210A (en) |
| CN (1) | CN102369787A (en) |
| TW (1) | TW201107502A (en) |
| WO (1) | WO2010113659A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103805947A (en) * | 2012-11-09 | 2014-05-21 | 东京毅力科创株式会社 | Film forming apparatus |
| CN109609909A (en) * | 2019-01-03 | 2019-04-12 | 京东方科技集团股份有限公司 | Evaporation coating method and system |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8465556B2 (en) * | 2010-12-01 | 2013-06-18 | Sisom Thin Films Llc | Method of forming a solid state cathode for high energy density secondary batteries |
| WO2012118199A1 (en) * | 2011-03-03 | 2012-09-07 | 東京エレクトロン株式会社 | Vapor-deposition device, vapor-deposition method, organic el display, and lighting device |
| JP6049051B2 (en) | 2011-07-29 | 2016-12-21 | 日東電工株式会社 | Double-side vacuum deposition method |
| JP5963193B2 (en) | 2011-07-29 | 2016-08-03 | 日東電工株式会社 | Manufacturing method of laminate |
| DE102012107824B3 (en) * | 2012-08-24 | 2014-02-06 | Technische Universität Braunschweig Carolo-Wilhelmina | Method for coating a substrate with a plurality of material layers and multi-material delivery device therefor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007253590A (en) * | 2006-03-27 | 2007-10-04 | Fujifilm Corp | Gas barrier film, substrate film, and organic electroluminescence element |
| JP2008159381A (en) * | 2006-12-22 | 2008-07-10 | Tokyo Electron Ltd | Substrate treatment device and cleaning method |
-
2010
- 2010-03-18 CN CN2010800147449A patent/CN102369787A/en active Pending
- 2010-03-18 KR KR1020117020914A patent/KR20110116210A/en not_active Application Discontinuation
- 2010-03-18 JP JP2011507089A patent/JPWO2010113659A1/en not_active Withdrawn
- 2010-03-18 WO PCT/JP2010/054675 patent/WO2010113659A1/en active Application Filing
- 2010-03-30 TW TW099109484A patent/TW201107502A/en unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007253590A (en) * | 2006-03-27 | 2007-10-04 | Fujifilm Corp | Gas barrier film, substrate film, and organic electroluminescence element |
| JP2008159381A (en) * | 2006-12-22 | 2008-07-10 | Tokyo Electron Ltd | Substrate treatment device and cleaning method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103805947A (en) * | 2012-11-09 | 2014-05-21 | 东京毅力科创株式会社 | Film forming apparatus |
| CN109609909A (en) * | 2019-01-03 | 2019-04-12 | 京东方科技集团股份有限公司 | Evaporation coating method and system |
| CN109609909B (en) * | 2019-01-03 | 2021-01-26 | 京东方科技集团股份有限公司 | Evaporation method and system |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2010113659A1 (en) | 2012-10-11 |
| WO2010113659A1 (en) | 2010-10-07 |
| KR20110116210A (en) | 2011-10-25 |
| TW201107502A (en) | 2011-03-01 |
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Application publication date: 20120307 |