CN102367572B - 多晶硅铸锭坩埚喷涂免烧结方法 - Google Patents
多晶硅铸锭坩埚喷涂免烧结方法 Download PDFInfo
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- CN102367572B CN102367572B CN201110281457.0A CN201110281457A CN102367572B CN 102367572 B CN102367572 B CN 102367572B CN 201110281457 A CN201110281457 A CN 201110281457A CN 102367572 B CN102367572 B CN 102367572B
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- silicon
- silicon nitride
- sintering
- crucible
- gel
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- 238000005507 spraying Methods 0.000 title claims abstract description 26
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 18
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 46
- 239000010703 silicon Substances 0.000 claims abstract description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 30
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000011521 glass Substances 0.000 claims abstract description 15
- 239000000203 mixture Substances 0.000 claims abstract description 14
- 238000003756 stirring Methods 0.000 claims abstract description 13
- 239000000725 suspension Substances 0.000 claims abstract description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 29
- 239000007788 liquid Substances 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 5
- 238000006068 polycondensation reaction Methods 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- 230000001680 brushing effect Effects 0.000 claims description 3
- 238000006555 catalytic reaction Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000003760 magnetic stirring Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 11
- 239000011248 coating agent Substances 0.000 abstract description 8
- 238000000576 coating method Methods 0.000 abstract description 8
- 239000012535 impurity Substances 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000000499 gel Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 230000005611 electricity Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000035515 penetration Effects 0.000 abstract 1
- 239000008213 purified water Substances 0.000 abstract 1
- 239000000741 silica gel Substances 0.000 abstract 1
- 229910002027 silica gel Inorganic materials 0.000 abstract 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 abstract 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 13
- 239000010410 layer Substances 0.000 description 12
- 229960004756 ethanol Drugs 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 7
- 239000010453 quartz Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000002242 deionisation method Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 238000000643 oven drying Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 235000006708 antioxidants Nutrition 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229960000935 dehydrated alcohol Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- -1 silicon nitrides Chemical class 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
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Abstract
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CN201110281457.0A CN102367572B (zh) | 2011-09-21 | 2011-09-21 | 多晶硅铸锭坩埚喷涂免烧结方法 |
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CN201110281457.0A CN102367572B (zh) | 2011-09-21 | 2011-09-21 | 多晶硅铸锭坩埚喷涂免烧结方法 |
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CN102367572A CN102367572A (zh) | 2012-03-07 |
CN102367572B true CN102367572B (zh) | 2014-01-01 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102728532B (zh) * | 2012-06-29 | 2014-08-06 | 宜昌南玻硅材料有限公司 | 一种制备多晶硅铸锭用坩埚免烧结涂层的方法 |
CN102877126A (zh) * | 2012-09-20 | 2013-01-16 | 蠡县英利新能源有限公司 | 一种多晶硅大坩埚及其涂层浆料、涂层制备方法 |
CN104018221A (zh) * | 2014-05-08 | 2014-09-03 | 浙江晟辉科技有限公司 | 一种应用热交换生产多晶硅铸锭的方法 |
TWI568667B (zh) * | 2016-01-14 | 2017-02-01 | Super Energy Materials Inc | An impurity absorbing material and a crucible coated with the material |
CN112845000A (zh) * | 2020-12-31 | 2021-05-28 | 安徽百圣鑫金属科技有限公司 | 一种熔炼高纯铝锭用耐热涂层的制备方法 |
CN116535245B (zh) * | 2023-05-08 | 2024-09-27 | 徐州协鑫太阳能材料有限公司 | 一种致密石英坩埚高纯涂层的制备方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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TWI361174B (en) * | 2004-04-29 | 2012-04-01 | Vesuvius Crucible Co | Crucible for the crystallization of silicon |
EP1739209A1 (en) * | 2005-07-01 | 2007-01-03 | Vesuvius Crucible Company | Crucible for the crystallization of silicon |
DE102005050593A1 (de) * | 2005-10-21 | 2007-04-26 | Esk Ceramics Gmbh & Co. Kg | Dauerhafte siliciumnitridhaltige Hartbeschichtung |
CN101508590B (zh) * | 2009-03-20 | 2012-07-04 | 江西赛维Ldk太阳能高科技有限公司 | 一种多晶硅铸锭用坩埚涂层以及制备方法 |
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