CN102347417B - Radiation-emitting component - Google Patents
Radiation-emitting component Download PDFInfo
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- CN102347417B CN102347417B CN201110340389.0A CN201110340389A CN102347417B CN 102347417 B CN102347417 B CN 102347417B CN 201110340389 A CN201110340389 A CN 201110340389A CN 102347417 B CN102347417 B CN 102347417B
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- 239000004065 semiconductor Substances 0.000 claims abstract description 57
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 45
- 230000005855 radiation Effects 0.000 claims description 147
- 238000005253 cladding Methods 0.000 claims description 49
- 239000000463 material Substances 0.000 claims description 34
- 238000006243 chemical reaction Methods 0.000 claims description 32
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- 230000008878 coupling Effects 0.000 claims description 8
- 238000010168 coupling process Methods 0.000 claims description 8
- 238000005859 coupling reaction Methods 0.000 claims description 8
- 230000002745 absorbent Effects 0.000 abstract 2
- 239000002250 absorbent Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 description 21
- 230000008901 benefit Effects 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 229910001512 metal fluoride Inorganic materials 0.000 description 12
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- 150000004706 metal oxides Chemical class 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 8
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910052735 hafnium Inorganic materials 0.000 description 6
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 6
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- 229920003023 plastic Polymers 0.000 description 3
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
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- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
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- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The invention relates to a radiation-emitting component (8), which comprises a semiconductor layer stack (10) having an active region (12), which is configured for emitting electromagnetic radiation (R), and a covering element (62) has an outer surface (68) and an inner surface (70). An absorbent or reflective layer (72) is arranged on the outer surface (68) and the inner surface (70) of a first section (64) of the covering element (62). The absorbent or reflective layer (72) is arranged on the outer surface (68) and the inner surface (70) of a second section (66) of the covering element (62).
Description
The present patent application is to be the divisional application that on March 19th, 2010, application number are the application for a patent for invention of " device of emitted radiation " for " 200880107984.6 ", denomination of invention the date of application.
Technical field
The present invention relates to a kind of device of emitted radiation, it has the active area building for electromagnetic radiation-emitting.
Summary of the invention
Task of the present invention is, proposes a kind of device of emitted radiation, can realize in simple mode the high radiation-emitting efficiency of the device of emitted radiation by this device.In addition, the desirable radiation spectrum with high as far as possible accuracy will be realized in simple mode.
This task solves by the feature of independent claims.Favourable expansion scheme of the present invention shows with dependent claims.
According to first aspect, a kind of device of emitted radiation has been proposed, it has: with the semiconductor layers stack of active area, this active area builds for electromagnetic radiation-emitting; And at least one surface of semiconductor layers stack or build at least one surface for the optical element of transmission of electromagnetic radiation, wherein this surface has normal vector, on at least one surface of the semiconductor layers stack of wherein passing in electromagnetic radiation or optical element, be provided with anti-reflection layer, and this anti-reflection layer is configured to and makes it under the following viewing angle about surface normal, have minimum reflection for wavelength given in advance: the increase of the zonal luminous flux of electromagnetic radiation roughly has maximum in the situation that of this viewing angle.Zonal luminous flux is the lip-deep of semiconductor layers stack or at the luminous flux building for the lip-deep solid angle scope of the optical element of transmission of electromagnetic radiation from the normal vector of respective surfaces.
Can provide the explanation about device and total emission Angular correlation of emitted radiation the lip-deep of semiconductor layers stack or at the zonal luminous flux of the lip-deep solid angle scope that builds the optical element that is used for transmission of electromagnetic radiation.Anti-reflection layer is configured to and makes it under the following viewing angle about surface normal, have minimum reflection for wavelength given in advance: the in the situation that of this viewing angle, the increase of the zonal luminous flux of electromagnetic radiation roughly has maximum.The advantage building is like this, like this may be by the total emission maximization of the device of emitted radiation in the case of the distribution of the zonal luminous flux relevant to viewing angle of considering electromagnetic radiation.
In a form of implementation, anti-reflection layer is configured to and makes it under the viewing angle between 30 ° to 60 °, have minimal reflection about normal vector for wavelength given in advance.Thus, it is possible making the overall emission maximization of the device of following emitted radiation: in these devices, in the viewing angle of the maximum of the increase of the zonal luminous flux of electromagnetic radiation between 30 ° to 60 °.
In another preferred form of implementation, anti-reflection layer is configured to and makes it under the viewing angle about between 40 ° to 50 ° of normal vector, have minimum reflection for wavelength given in advance.Thus, it is possible making the overall emission maximization of the device of following emitted radiation: in these devices, the maximum of the increase of the zonal luminous flux of electromagnetic radiation is in the viewing angle of about 45 °.
In another form of implementation, the device of emitted radiation has substrate, on this substrate, is provided with semiconductor layers stack, and this substrate has the surface deviating from semiconductor layers stack, on this surface, is provided with anti-reflection layer.This advantage having is that anti-reflection layer can be applied on the existing substrate of device of emitted radiation simply.
In another form of implementation, the device of emitted radiation has cover plate, itself and semiconductor layers stack interval, its cover plate has towards the surface of semiconductor layers stack and deviates from the surface in semiconductor layers stack, and anti-reflection layer be arranged on cover plate surperficial one of at least on.Thus, can advantageously independently carry out applying of reflector with the manufacture of semiconductor layers stack.Finally, reflector also can be applied on the device of the emitted radiation of having made.
In another form of implementation, anti-reflection layer comprises metal fluoride or metal oxide, and this metal is selected from hafnium, zirconium, aluminium, titanium and magnesium.This advantage having is to be suitable for very well anti-reflection layer with metal fluoride and the metal oxide of this metal.
In another form of implementation, substrate comprises the material that is selected from glass, quartz and plastics.Thus, be possible for stable, the solution that can manufacture simply and with low cost of substrate.
According to second aspect, a kind of device of emitted radiation has been proposed, it has: with the semiconductor layers stack of active area, this active area builds and is used for launching primary electrical magnetic radiation, and with the conversion layer of semiconductor layers stack mechanical couplings, this conversion layer has luminescent material, this luminescent material builds for a part for primary electrical magnetic radiation is converted to secondary electrical magnetic radiation, wherein a part for a part for primary electrical magnetic radiation and secondary electrical magnetic radiation stack becomes the mixed radiation with obtained chromaticity coordinate, and that passes in hybrid electromagnetic radiation surperficial is provided with colour correction layer on one of at least, this colour correction layer is with at least two layers that are adjacent to arrange, wherein ground floor is made up of the material with first refractive rate, and the second layer is made up of the material with the second refractive index, first refractive rate is different from the second refractive index, and these layer buildings are used for angle according to the observation and regulate obtained chromaticity coordinate.
This advantage having is, in the case of considering the composition of hybrid electromagnetic radiation, angular difference does not affect the primary radiation of device and the mixed proportion of secondary radiation of emitted radiation significantly according to the observation.In addition, this advantage having is that the electromagnetic radiation of the wavelength that should not be launched can be reflected back toward in conversion layer, and can be converted in order further to utilize secondary electrical magnetic radiation there.
In a form of implementation of second aspect, colour correction layer building is the layer heap with multiple layers, and these layers are arranged so that two adjacent with one of layer respectively layers have following refractive index: the two is all less than or greater than the refractive index of corresponding layer these refractive indexes.This is corresponding to the layout of layer heap of layer with height alternately and low-refraction.By this layout of layer, can realize broadband and efficient colour correction.
In another form of implementation of second aspect, colour correction layer is arranged on conversion layer.Thus, color conversion layer can be arranged so that it is mechanically subject to good especially protection.
In another form of implementation of second aspect, the device of emitted radiation has cover plate, and this cover plate is arranged on conversion layer, and this cover plate has the surface deviating from conversion layer, and colour correction layer is arranged on this surface.Thus, can independently carry out applying of colour correction layer with the manufacture of layer heap and conversion layer.Reflector finally also can be applied on the cover plate of device of the emitted radiation of having made.
In another form of implementation of second aspect, the device of emitted radiation has cover plate, this cover plate and conversion layer interval, its cover plate has towards the surface of semiconductor layers stack and deviates from the surface in semiconductor layers stack, and colour correction layer be arranged on cover plate surface one of at least on.This advantage having is independently to carry out applying of colour correction layer with the manufacture of layer heap and conversion layer.Reflector finally also can be applied on the cover plate of separation of the device of the emitted radiation of having made in addition.
In another form of implementation of second aspect, colour correction layer comprises metal fluoride or metal oxide, and metal is selected from magnesium, hafnium, zirconium, aluminium and titanium.The layer of colour correction layer can be formed by different metal fluorides and metal oxide.Be applicable to very well the layer of colour correction with the metal fluoride of this metal and metal oxide.
According to the third aspect, a kind of device of emitted radiation has been proposed, it has: with the semiconductor layers stack of active area, this active area builds for electromagnetic radiation-emitting; And with surperficial cladding element, wherein in the first section of cladding element, be provided with from the teeth outwards absorbefacient or reflexive layer, and in the second section of cladding element, surface does not have absorbefacient or reflexive layer.This advantage having is, the device of emitted radiation can send the light beam with shape of cross section by semiconductor layers stack, and this light beam is determined by the shape of second section that is configured to window area of cladding element.
In a form of implementation of the third aspect, on one of surface of the second section of cladding element, be provided with anti-reflection layer, and this anti-reflection layer is configured to and makes it under the following viewing angle about surface normal, have minimum reflection for wavelength given in advance: the increase of the zonal luminous flux of electromagnetic radiation roughly has maximum in the situation that of this viewing angle.Thus likely, in the case of the distribution of the zonal luminous flux relevant to viewing angle of considering electromagnetic radiation, in second section that is configured to window area of cladding element, the overall emission of the device of emitted radiation has maximum.
In another form of implementation of the third aspect, anti-reflection layer is configured to and makes it under the viewing angle between 40 ° to 50 °, have minimum reflection for wavelength given in advance.This advantage having is, the overall emission of the device of emitted radiation can have maximum, and wherein the maximum of the increase of the zonal luminous flux of electromagnetic radiation is in the viewing angle of about 45 °.
In another form of implementation of the third aspect, anti-reflection layer comprises metal fluoride or metal oxide, and this metal is selected from hafnium, zirconium, aluminium, titanium and magnesium.This is particularly advantageous, because can be suitable for very well anti-reflection layer with metal fluoride and the metal oxide of this metal.
In another form of implementation of the third aspect, electromagnetic radiation is primary electrical magnetic radiation, and with piling the conversion layer of mechanical couplings with layer, this conversion layer has luminescent material, this luminescent material is configured to for a part for primary electrical magnetic radiation is converted to secondary electrical magnetic radiation, wherein a part for a part for primary electrical magnetic radiation and secondary electrical magnetic radiation stack becomes the mixed radiation with obtained chromaticity coordinate, and wherein on the second section of cladding element, be provided with colour correction layer, this colour correction layer is with at least two layers that are adjacent to arrange, wherein ground floor is made up of the material with first refractive rate, and the second layer is made up of the material with the second refractive index, first refractive rate is different from the second refractive index, and these layer buildings are used for angle according to the observation and regulate obtained chromaticity coordinate.This advantage having is, considers in the situation of composition of hybrid electromagnetic radiation that angular difference according to the observation does not affect the primary radiation of device and the mixed proportion of secondary radiation of emitted radiation significantly.
In another form of implementation of the third aspect, colour correction layer comprises metal fluoride or metal oxide, and metal is selected from magnesium, hafnium, zirconium, aluminium and titanium.This is favourable, because be suitable for use in very well the layer of colour correction with the metal fluoride of this metal and metal oxide.
In another form of implementation of the third aspect, colour correction layer building is the layer heap with multiple layers, and these layers are arranged so that two adjacent with one of these layers respectively layers have following refractive index: the two is all less than or greater than the refractive index of corresponding layer these refractive indexes.This is favourable, can realize colour correction broadband and efficient because have the layer heap of height alternately and low-refraction.
In another form of implementation of the third aspect, anti-reflection layer and colour correction layer are arranged on two surfaces opposite each other of the second section of cladding element.This advantage having is that cladding element can be used as the supporting mass of anti-reflection layer and the supporting mass as colour correction layer.In addition, this advantage having is that anti-reflection layer can independently be applied on cladding element with colour correction layer.
In another form of implementation of the third aspect, absorbefacient and/or reflexive layer is arranged on the outer surface of the first section of cladding element.
In another form of implementation of the third aspect, absorbefacient and/or reflexive layer is arranged in the side section of cladding element.
In another form of implementation of the third aspect, the second section of cladding element has two part sections, and its principal spread direction tilts towards each other.
In another form of implementation of the third aspect, two sectional principal spread directions of portion form the angle between 150 ° to 170 ° each other, comprising boundary value.
In another form of implementation of the third aspect, the second section of cladding element is configured to the shading element of the headlight of vehicle, and wherein this shading element is configured to as asymmetrical dipped headlights.
In another form of implementation of the third aspect, conversion element and anti-reflection layer, colour correction layer and cladding element compartment of terrain arrange.
In another form of implementation of the third aspect, anti-reflection layer is arranged on the outer surface of the first section of cladding element.
In another form of implementation, the device of emitted radiation is light-emitting diode.Thus likely, reflector and/or colour correction layer are used for to light-emitting diode.
In another form of implementation, the device of emitted radiation builds planarly.At this, build and mean planarly: the associated ground of device of emitted radiation extends on face region, this face region at least has the area of several square millimeters, the area of preferred several square centimeters, and be particularly preferably the area of a square decimeter or several square decimeters or larger.This advantage having is, reflector and/or colour correction layer can build for the device of the emitted radiation of planar structure and thus also for the device of very smooth emitted radiation.
Brief description of the drawings
Set forth in more detail favourable expansion scheme of the present invention by schematic diagram below.
Wherein:
Fig. 1 shows the sectional view with the first form of implementation of the device of the emitted radiation of anti-reflection layer,
Fig. 2 shows the sectional view with another form of implementation of the device of the emitted radiation of anti-reflection layer,
Fig. 3 shows the sectional view with another form of implementation of the device of the emitted radiation of anti-reflection layer,
Fig. 4 shows the sectional view with the first form of implementation of the device of the emitted radiation of colour correction layer,
Fig. 5 shows the sectional view with another form of implementation of the device of the emitted radiation of colour correction layer,
Fig. 6 shows the sectional view with another form of implementation of the device of the emitted radiation of colour correction layer,
Fig. 7 shows the sectional view of a form of implementation of the device of emitted radiation,
Fig. 8 shows along the vertical view of another form of implementation of the device of the emitted radiation of the line VIII-VIII ' of Fig. 7,
Fig. 9 shows the sectional view of the colour correction layer of the device of emitted radiation,
Figure 10 shows relevant to viewing angle the chromaticity coordinate of the device of the emitted radiation of CIE color table,
Figure 11 shows the CIE color table with selected chromaticity coordinate, and
Figure 12 in normalization depending on there is shown the distribution map of zonal luminous flux of light-emitting diode.
In institute's drawings attached, the element of same structure or function represents with identical Reference numeral.
Shown element and magnitude relationship to each other thereof can not be considered as conforming with ratio in principle.Or rather, for clearer and/or for better understanding, each element for example layer, parts, device and region can be overstated heavy back or be illustrated large.
Embodiment
Figure 1 illustrates the first embodiment of the device 8 of emitted radiation.
The device 8 of emitted radiation has semiconductor layers stack 10.Semiconductor layers stack 10 has the active area 12 building for electromagnetic radiation-emitting R.
The device 8 of this emitted radiation is preferably configured to and makes the device 8 of emitted radiation is light-emitting diode or light emitting diode matrix.
Preferably, the device 8 of emitted radiation is semiconductor light-emitting-diode, for example the semiconductor light-emitting-diode based on AlIn-GaN.
Bonding pad 13 is adjacent to arrange with active area 12, and these bonding pads and connecting line coupling, be used to the device 8 of emitted radiation that electric current is provided.
Semiconductor layers stack 10 is arranged on substrate 18.Particularly preferably be, substrate 18 has glass.Alternatively or additionally, substrate 18 also can comprise quartz, plastic film, metal, metal film, silicon wafer or other suitable backing materials arbitrarily.Alternatively or additionally, substrate 18 also can have the sequence of layer of laminate or multiple layers of formation.At this, one of at least can the thering is glass or be formed by glass of layer.Especially, in the case of the substrate 18 being formed by sequence of layer, the layer that is at least provided with semiconductor layers stack 10 on it can have glass.In addition, substrate 18 also can have plastics.
Make the electromagnetic radiation R of transmitting in active area 12 through substrate 18 (Fig. 2) transmitting if the device of emitted radiation 8 is configured to, substrate 18 can advantageously have the transparency at least a portion of the electromagnetic radiation producing in active area 12.In this configuration advantageously, the transparency of at least a portion of the electromagnetic radiation that the bonding pad 13 building between active area 12 and substrate 18 produces in also can having for active area 12.
Semiconductor layers stack 10 has the surface 14 with normal vector N, is provided with anti-reflection layer 30 (Fig. 1) on this surface.Anti-reflection layer 30 is configured to and makes it under the viewing angle ALPHA of the normal vector N on the surface 14 about semiconductor layers stack 10, have minimum reflection for wavelength given in advance, and wherein in the situation that of this viewing angle, the increase of the zonal luminous flux of electromagnetic radiation R roughly has maximum.
In Figure 12, exemplarily show the distribution of zonal luminous flux for light-emitting diode with normalized form.
This diagram is to draw to the solid angle scope between viewing angle ALPHA according to 0 °.Solid angle scope is respectively from normal vector N, and viewing angle ALPHA can be between 0 ° to 90 °.At this, zonal luminous flux normalizes on the zonal luminous flux in the solid angle scope between 0 ° to 90 °.Shown here go out the form of implementation of device 8 of the emitted radiation as light-emitting diode in, for the value of viewing angle ALPHA that equals 45 °, the maximum that reaches zonal luminous flux rises.In other words, this means, for the overall emission of light-emitting diode, maximum differential value (Beitrag) is in following solid angle: for this solid angle, viewing angle ALPHA equals 45 °.
Anti-reflection layer 30 needn't necessarily be configured to make for wavelength given in advance just in time under the viewing angle ALPHA about surface 14 normal vector N reflection be minimum because the increase of the zonal luminous flux of electromagnetic radiation R is approximately constant conventionally in the wide region of the maximum left and right of the increase of the zonal luminous flux of electromagnetic radiation R.Therefore, anti-reflection layer 30 is configured to and is made for wavelength given in advance under the viewing angle ALPHA of the normal vector N about surface 14, minimal reflection is near the maximum of the increase of the zonal luminous flux of electromagnetic radiation R, and this is just enough.
Particularly preferably be, for wavelength given in advance, the minimal reflection of anti-reflection layer 30 is under the viewing angle ALPHA about between 30 ° to 60 ° of normal vector N.So likely, reach the maximization of overall emission for the device 8 of emitted radiation, in the case of the viewing angle ALPHA between 30 ° to 60 °, have the maximum of the zonal luminous flux of electromagnetic radiation R for this overall emission.
Especially particularly preferably be, for wavelength given in advance, in the scope of the viewing angle ALPHA between 40 ° to 50 °, have the minimal reflection of anti-reflection layer 30.
In another form of implementation, substrate 18 has surface 15, and this surface deviates from semiconductor layers stack 10 (Fig. 2).Be provided with anti-reflection layer 30 in deviating from the surface 15 of semiconductor layers stack 10 of substrate 18.The function of the anti-reflection layer 30 of the form of implementation of Fig. 2 is corresponding to the function of the anti-reflection layer 30 of the form of implementation of Fig. 1.
Fig. 3 show with semiconductor layers stack 10 and with the device of the emitted radiation of the cover plate 20 at semiconductor layers stack 10 intervals, wherein this cover plate has towards the surface 16 of semiconductor layers stack 10 and deviates from the surface 17 in semiconductor layers stack 10.In order to realize the reflection reducing on the cover plate 20 that is configured to the optical element that is suitable for transmission of electromagnetic radiation R, anti-reflection layer 30 be not only arranged on cover plate 20 on the surface 16 of semiconductor layers stack 10, and be arranged on the surface that deviates from semiconductor layers stack 10 17 of cover plate 20.Can realize thus, be issued to minimum reflection for wavelength given in advance in the situation of the viewing angle ALPHA of the normal vector N about surface 16,17, wherein the in the situation that of this viewing angle ALPHA, the increase of the zonal luminous flux of electromagnetic radiation R has maximum.This is particularly advantageous, because can realize like this reflection minimized on two surfaces 16,17 of cover plate.
Surface one of 14,15,16,17 or multiple on anti-reflection layer 30 realize by the vapor deposition of the one or more thin layer of a kind of material, especially metal fluoride or metal oxide.The metal of metal fluoride and/or metal oxide is preferably selected from hafnium, zirconium, aluminium, titanium and magnesium.Suitable material is magnesium fluoride, silicon dioxide, titanium dioxide or zirconium dioxide especially.
Particularly preferably be, anti-reflection layer 30 has multiple layers.This advantage having is to make consumingly thus reflection minimized.In addition,, by by multiple layer building anti-reflection layers 30, can realize for the reflection of multiple wavelength and reducing.
In other forms of implementation, the device 8 of emitted radiation is preferably configured to light-emitting diode, and its emitting mixed light, from the electromagnetic radiation (Fig. 4 to 6) of at least two wave-length coverages.Particularly preferably be, the device 8 of this emitted radiation is configured to white light emitting diode.
The device 8 having with the emitted radiation of the semiconductor layers stack 10 of active area 12 has been shown in Fig. 4 to 6, and this active area builds and is used for launching primary electrical magnetic radiation P.The device 8 of emitted radiation has conversion layer 40, itself and semiconductor layers stack 10 mechanical couplings.
The primary electrical magnetic radiation P producing in the active area 12 of the device 8 of emitted radiation in the situation that conducting direction applies with electric current particularly can have following spectrum: this spectrum has ultraviolet spectral range until the wavelength of infrared range of spectrum.Especially can be advantageously, this spectrum at least comprises the visible wavelength for observer.The spectrum of electromagnetic radiation can advantageously also comprise multiple wavelength, makes can form at observer place the luminous impression of colour mixture.To this likely, the device 8 of emitted radiation itself can produce the primary electrical magnetic radiation P with multiple wavelength, or whole secondary electrical magnetic radiation S that change second wave length (for example in yellow and/or red color spectrum range) by material for transformation of wave length into of a part of the primary electrical magnetic radiation P being produced by the device 8 of emitted radiation or that produce by the device 8 of emitted radiation, to have the first wavelength (for example in blueness and/or green spectral range) primary electrical magnetic radiation P.For this reason, be provided with conversion layer 40 after active area 12, it has material for transformation of wave length.Suitable material for transformation of wave length and be known for those skilled in the art aspect its 26S Proteasome Structure and Function with the layer of material for transformation of wave length, and no longer elaborates at this.A part of a part of primary electrical magnetic radiation P and secondary electrical magnetic radiation S is superposed to the hybrid electromagnetic radiation M with obtained chromaticity coordinate.For white light emitting diode, hybrid electromagnetic radiation M is white light to a great extent.Be worth expecting, this white light emitting diode has been facilitated uniform as far as possible color impression in plane.
As shown in Figure 10, the chromaticity coordinate C of hybrid electromagnetic radiation M
xand C
yincrease along with becoming larger viewing angle ALPHA.This means, the ratio of the secondary electrical magnetic radiation S of the second wave length in yellow and/or red color spectrum range in hybrid electromagnetic radiation M increases along with becoming larger viewing angle ALPHA.
Figure 11 illustrates the chromaticity coordinate C with hybrid electromagnetic radiation M
xand C
ycIE color table.Drawn for viewing angle ALPHA be 90 ° hybrid electromagnetic radiation M chromaticity coordinate G and for the chromaticity coordinate O of viewing angle ALPHA that equals 0 °.In addition, in the CIE of Figure 11 color table, provided achromatic some E, corresponding to pure white light.
In the form of implementation shown in Fig. 4 and 6, on conversion layer 40, be provided with cover plate 20.Cover plate 20 has the surface 17 that deviates from conversion layer 40, is provided with colour correction layer 48 on this surface.
Colour correction layer 48 has the layer 50,51 of at least two adjacent settings.Ground floor 50 is made up of the material with first refractive rate N_1, and the second layer 51 is made up of the material with the second refractive index N_2.First refractive rate N_1 is different from the second refractive index N_2.Layer 50,51 aspect its refractive index N_1, N_2 and their thickness, be configured to make obtained chromaticity coordinate according to the observation angle ALPHA regulate.By the thickness of the N_1 of selective refraction rate suitably, N_2 and layer 50,51, what can realize especially is, approach chromaticity coordinate E for the chromaticity coordinate G of the viewing angle ALPHA of 90 ° or for the chromaticity coordinate O of the viewing angle ALPHA that equals 0 °, as indicated in passing through the arrow in the CIE of Figure 11 color table figure.
If colour correction layer 48 is configured to the layer heap with multiple layers 50,51,52,53,54,55,56, as schematically illustrated in Fig. 9, and if layer 50,51,52,53,54,55,56 is arranged so that two adjacent with one of layer respectively layers have following refractive index: the two is all less than or greater than the refractive index of corresponding layer these refractive indexes.In other words, this means, one of layer of colour correction layer 48 is respectively between adjacent layer, and the layer that this is adjacent or the two all have larger refractive index or have less refractive index.Like this, can realize particularly preferred colour correction and realize thus chromaticity coordinate G, O far away especially the approaching to chromaticity coordinate E.
A form of implementation that figure 5 illustrates the device 8 of emitted radiation, wherein colour correction layer 48 is applied directly on the surface 42 of conversion layer 40.
Fig. 6 shows a form of implementation of the device 8 of emitted radiation, its cover plate 20 and conversion layer 40 intervals.On the surface 17 that deviates from semiconductor layers stack 10, be provided with colour correction layer 48.This advantage having is that colour correction layer 48 can be applied on cover plate 20 afterwards.But, colour correction layer 48 also can additionally or individually be arranged on cover plate 20 on the surface 16 of semiconductor layers stack 10.
Fig. 7 a and 7b show the form of implementation having with the device 8 of the emitted radiation of the semiconductor layers stack 10 of active area 12.Semiconductor layers stack 10 builds and is used for launching primary electrical magnetic radiation P.The device 8 of emitted radiation has conversion layer 40, itself and semiconductor layers stack 10 mechanical couplings.Be configured to for a part of primary electrical magnetic radiation P is converted to secondary electrical magnetic radiation S with the conversion layer 40 of luminescent material.A part of primary electrical magnetic radiation P and secondary electrical magnetic radiation S are superposed to the mixed radiation N with obtained chromaticity coordinate each other.
The device 8 of emitted radiation has cladding element 62, and this element has the first section 64 and the second section 66.Cladding element 62 has outer surface 68 and inner surface 70.On the outer surface 68 of the first section 64 of cladding element 62, be provided with absorbefacient or reflexive layer 72.The surface 68,70 of the second section 66 of cladding element 62 does not have absorbefacient or reflexive layer 72.
Reflexive and/or absorbefacient layer 72 particularly also can be arranged in the side section 74 of cladding element 62.Thus, can avoid particularly in the side section 74 of cladding element 62 and in approaching the part (referring to Fig. 8) of front area of first section 64 the second section 66, cladding element 62 of cladding element 62 optical transmission.
Second section 66 that there is no reflexive and/or absorbefacient layer 72 of cladding element 62 can have suitable shape, as illustrated in Figure 8.If the device of emitted radiation 8 for example will be used for the headlight of vehicle, light cone have from the first section 64 to the transition of the second section 66 more or less unexpected dark/bright transition.Especially, the second section 66 of cladding element 62 can have two part section 66a, 66b, and their principal spread direction inclines towards each other as making them form each other the angle of about 150 ° to 170 °.Will serve as for the shading element of the headlight of vehicle and use and this shading element preferably will be served as asymmetrical dipped headlights while using when the second section 66 of cladding element 62, this is particularly advantageous.
Fig. 7 b shows the device 8 of emitted radiation, wherein on the surface 68 of the second section 66 of cladding element 62, is provided with anti-reflection layer 58.Anti-reflection layer 58 is configured to and makes the device 8 of emitted radiation under the viewing angle ALPHA of the normal vector N about surface 68,70, have minimum reflection for wavelength given in advance, and wherein in the situation that of this viewing angle, the increase of the zonal luminous flux of hybrid electromagnetic radiation M roughly has maximum.Anti-reflection layer 58 is preferably configured to and makes it under the viewing angle ALPHA between 40 ° to 50 °, have minimum reflection for wavelength given in advance.Particularly preferably be, anti-reflection layer 58 is formed by metal fluoride or metal oxide.Preferably, metal is selected from hafnium, zirconium, aluminium, titanium and magnesium.
On the surface 70 of the second section 66 of cladding element 62, be provided with colour correction layer 48.Colour correction layer 48 has the layer 50,51 of at least two adjacent settings.Ground floor 50 is made up of the material with first refractive rate N_1, and the second layer 51 is made up of the material with the second refractive index N_2.First refractive rate N_1 is different from the second refractive index N_2.Thus likely, these layer buildings are used for to angle ALPHA according to the observation and regulate obtained chromaticity coordinate.Especially, colour correction layer 48 can be constructed as the layer heap (Fig. 9) with multiple layers 50,51,52,53,54,55,56.
Anti-reflection layer 58 and colour correction layer 48 are arranged on two surfaces that arrange 68,70 of the second section 66 of cladding element 62 opposite each otherly.Thus, the second section 66 of cladding element 62 can be for holding anti-reflection layer 58 and colour correction layer 48.
Known according to foregoing description, technical scheme of the present invention includes but not limited to following:
The device (8) of 1. 1 kinds of emitted radiations of scheme, it has:
-with the semiconductor layers stack (10) of active area (12), this active area builds for electromagnetic radiation-emitting (R); And
At least one surface (14,15,16 of-semiconductor layers stack (10), 17) or build for the optical element (18 of transmission of electromagnetic radiation (R), 20) at least one surface (14,15,16,17), wherein this surface (14,15,16,17) there is normal vector (N)
Wherein:
At semiconductor layers stack (10) or optical element (18,20) at least one surface (14, that electromagnetic radiation (R) is passed, 15,16,17) on, be provided with anti-reflection layer (30), and this anti-reflection layer be configured to make this anti-reflection layer for wavelength given in advance about surface (14,15,16,17) under the following viewing angle (ALPHA) of normal vector (N), there is minimal reflection: the increase of the zonal luminous flux of electromagnetic radiation (R) roughly has maximum in the situation that of this viewing angle.
Scheme 2. is according to the device (8) of the emitted radiation described in scheme 1, wherein anti-reflection layer (30) be configured to make this anti-reflection layer for wavelength given in advance about normal vector (N) between 30 ° to 60 °, particularly there is minimal reflection under the viewing angle (ALPHA) between 40 ° to 50 °.
Scheme 3. is according to the device (8) of the emitted radiation described in the arbitrary scheme in such scheme, it has substrate (18), on this substrate (18), be provided with semiconductor layers stack (10), and this substrate (18) has the surface (15) that deviates from semiconductor layers stack (10), is provided with anti-reflection layer (30) on this surface.
Scheme 4. is according to the device (8) of the emitted radiation described in the arbitrary scheme in such scheme, wherein the device of emitted radiation (8) has cover plate (20), this cover plate and semiconductor layers stack (10) interval, its cover plate (20) has towards the surface (16) of semiconductor layers stack (10) and deviates from the surface (17) of semiconductor layers stack (10), and anti-reflection layer (30) be arranged on cover plate (20) surface (16,17) one of at least on.
Scheme 5. is according to the device of the emitted radiation described in scheme 3 or 4 (8), and wherein substrate (18) comprises the material that is selected from glass, quartz and plastics.
The device (8) of 6. 1 kinds of emitted radiations of scheme, it has:
-with the semiconductor layers stack (10) of active area (12), this active area builds and is used for launching primary electrical magnetic radiation (P); And
-with the conversion layer (40) of semiconductor layers stack (10) mechanical couplings, this conversion layer has luminescent material, this luminescent material builds for a part for primary electrical magnetic radiation (P) is converted to secondary electrical magnetic radiation (S)
Wherein:
The part stack of a part for-primary electrical magnetic radiation (P) and secondary electrical magnetic radiation (S) becomes the mixed radiation (M) with obtained chromaticity coordinate, and
-the surface (16 passed in hybrid electromagnetic radiation (M), 17, 42) one of at least on be provided with colour correction layer (48), this colour correction layer (48) is with at least two layers (50 that are adjacent to arrange, 51), wherein ground floor (50) is made up of the material with first refractive rate (N_1), the second layer (51) is made up of the material with the second refractive index (N_2), first refractive rate (N_1) is different from the second refractive index (N_2), and these layers (50, 51) build for angle (ALPHA) according to the observation and regulate obtained chromaticity coordinate.
Scheme 7. is according to the device (8) of the emitted radiation described in scheme 6, wherein colour correction layer (48) is configured to multiple layers (50, 51, 52, 53, 54, 55, 56) layer heap, and these layers (50, 51, 52, 53, 54, 55, 56) be arranged so that respectively and layer (50, 51, 52, 53, 54, 55, 56) one of two adjacent layers (50, 51, 52, 53, 54, 55, 56) there is following refractive index: the two is all less than or greater than corresponding layer (50 these refractive indexes, 51, 52, 53, 54, 55, 56) refractive index.
Scheme 8. is according to the device of the emitted radiation described in scheme 6 or 7 (8), and wherein colour correction layer (48) is arranged on conversion layer (40).
Scheme 9. is according to the device of the emitted radiation described in scheme 6 or 7 (8), it has cover plate (20), this cover plate (20) is arranged on conversion layer (40), and this cover plate has the surface (17) that deviates from conversion layer (40), and colour correction layer (48) is arranged on this surface.
Scheme 10. is according to the device of the emitted radiation described in scheme 6 or 7 (8), wherein the device of emitted radiation (8) has cover plate (20), this cover plate (20) and conversion layer (40) interval, its cover plate (20) has towards the surface (16) of semiconductor layers stack (10) and deviates from the surface (17) of semiconductor layers stack (10), and the surface (16,17) that colour correction layer (48) is arranged on cover plate (20) one of at least on.
The device (8) of 11. 1 kinds of emitted radiations of scheme, it has:
-with the semiconductor layers stack (10) of active area (12), this active area builds for electromagnetic radiation-emitting (R); And
-with surface (68,70) cladding element (62), wherein in first section (64) of cladding element (62) surface (68,70) on, be provided with absorbefacient or reflexive layer (72), and in second section (66) of cladding element (62), surface (68,70) does not have absorbefacient or reflexive layer (72).
Scheme 12. is according to the device (8) of the emitted radiation described in scheme 11, wherein on the surface (68 of second section (66) of cladding element (62), 70) one of, be provided with anti-reflection layer (58), and this anti-reflection layer be configured to make this anti-reflection layer for wavelength given in advance about surface (68, 70) under the viewing angle (ALPHA) of normal vector (N), particularly in the scope between 40 ° to 50 °, there is minimum reflection, wherein the in the situation that of this viewing angle, the increase of the zonal luminous flux of electromagnetic radiation (R) roughly has maximum.
Scheme 13. is according to the device of the emitted radiation described in scheme 11 or 12 (8), wherein electromagnetic radiation is primary electrical magnetic radiation (P), and this device with the conversion layer (40) of semiconductor layers stack (10) mechanical couplings, this conversion layer (40) has luminescent material, this luminescent material is configured to for a part for primary electrical magnetic radiation (P) is converted to secondary electrical magnetic radiation (S)
Wherein a part for a part for primary electrical magnetic radiation (P) and secondary electrical magnetic radiation (S) is superimposed as the mixed radiation (M) with obtained chromaticity coordinate, and wherein on second section (66) of cladding element (62), be provided with colour correction layer (48), this colour correction layer (48) is with at least two layers (50 that are adjacent to arrange, 51), wherein ground floor (50) is made up of the material with first refractive rate (N_1), the second layer (51) is made up of the material with the second refractive index (N_2), first refractive rate (N_1) is different from the second refractive index (N_2), and these layers (50, 51) build for basis about surface (68, 70) viewing angle (ALPHA) of normal vector (N) regulates obtained chromaticity coordinate.
Scheme 14. is according to the device (8) of the emitted radiation described in scheme 13, wherein colour correction layer (48) is configured to multiple layers (50, 51, 52, 53, 54, 55, 56) layer heap, and these layers (50, 51, 52, 53, 54, 55, 56) be arranged so that respectively and layer (50, 51, 52, 53, 54, 55, 56) one of two adjacent layers (50, 51, 52, 53, 54, 55, 56) there is following refractive index: the two is all less than or greater than corresponding layer (50 these refractive indexes, 51, 52, 53, 54, 55, 56) refractive index.
Scheme 15. is according to the device of the emitted radiation described in scheme 13 or 14 (8), wherein anti-reflection layer (58) and colour correction layer (48) are arranged on two surfaces opposite each other (68,70) of the second section (66) of cladding element (62).
The present invention is not confined to this by the description by embodiment.Or rather, the present invention includes new arbitrarily feature and the combination in any of feature, particularly comprise the combination in any of the feature in claim, even if this feature or this combination itself do not illustrate clearly in claim or embodiment.
Present patent application requires the priority of German patent application DE 102007045087.9 and DE 102008005344.9, and their disclosure is incorporated herein by reference.
Claims (13)
1. the device of an emitted radiation (8), it has:
-with the semiconductor layers stack (10) of active area (12), this active area builds for electromagnetic radiation-emitting (R); And
-with surface (68,70) cladding element (62), wherein in first section (64) of cladding element (62) surface (68,70) on, be provided with absorbefacient and/or reflexive layer (72), and in second section (66) of cladding element (62), surface (68,70) does not have absorbefacient and/or reflexive layer (72)
Wherein on the surface (68 of second section (66) of cladding element (62), 70) one of, be provided with anti-reflection layer (58), and this anti-reflection layer be configured to make this anti-reflection layer for wavelength given in advance about surface (68,70) in the scope under the viewing angle (ALPHA) of normal vector (N), between 40 ° to 50 °, have minimum reflection, wherein the in the situation that of this viewing angle, the increase of the zonal luminous flux of electromagnetic radiation (R) has maximum.
2. the device of emitted radiation according to claim 1 (8), wherein the in the situation that of 45° angle, reflection is minimum.
3. the device of emitted radiation according to claim 1 and 2 (8), wherein electromagnetic radiation is primary electrical magnetic radiation (P), and this device with the conversion layer (40) of semiconductor layers stack (10) mechanical couplings, this conversion layer (40) has luminescent material, this luminescent material is configured to for a part for primary electrical magnetic radiation (P) is converted to secondary electrical magnetic radiation (S)
Wherein a part for a part for primary electrical magnetic radiation (P) and secondary electrical magnetic radiation (S) is superimposed as the mixed radiation (M) with obtained chromaticity coordinate.
4. the device of emitted radiation according to claim 3 (8), wherein on second section (66) of cladding element (62), be provided with colour correction layer (48), this colour correction layer (48) is with at least two layers (50 that are adjacent to arrange, 51), wherein ground floor (50) is made up of the material with first refractive rate (N_1), the second layer (51) is made up of the material with the second refractive index (N_2), first refractive rate (N_1) is different from the second refractive index (N_2), and these layers (50, 51) build for basis about surface (68, 70) viewing angle (ALPHA) of normal vector (N) regulates obtained chromaticity coordinate.
5. the device of emitted radiation according to claim 4 (8), wherein colour correction layer (48) is configured to multiple layers (50, 51, 52, 53, 54, 55, 56) layer heap, and described multiple layer (50, 51, 52, 53, 54, 55, 56) be arranged so that in described multiple layer respectively and described multiple layers (50, 51, 52, 53, 54, 55, 56) one of two adjacent layers (50, 51, 52, 53, 54, 55, 56) there is following refractive index: the two is all less than or greater than corresponding layer (50 these refractive indexes, 51, 52, 53, 54, 55, 56) refractive index.
6. the device of emitted radiation according to claim 4 (8), wherein anti-reflection layer (58) and colour correction layer (48) are arranged on two surfaces opposite each other (68,70) of the second section (66) of cladding element (62).
7. the device of emitted radiation according to claim 1 and 2 (8), wherein absorbefacient and/or reflexive layer (72) is arranged on the outer surface (68) of the first section (64) of cladding element (62).
8. the device of emitted radiation according to claim 1 and 2 (8), wherein absorbefacient and/or reflexive layer (72) is arranged in the side section (74) of cladding element (62).
9. the device of emitted radiation according to claim 1 (8), wherein second section (66) of cladding element (62) has two part sections (66a, 66b), and its principal spread direction tilts towards each other.
10. the device of emitted radiation according to claim 9 (8), wherein the principal spread direction of two part sections (66a, 66b) forms the angle between 150 ° to 170 ° each other, comprising boundary value.
11. according to the device of the emitted radiation described in claim 9 or 10 (8), wherein second section (66) of cladding element (62) is configured to the shading element of the headlight of vehicle, and wherein this shading element is configured to as asymmetrical dipped headlights.
The device (8) of 12. emitted radiations according to claim 4, wherein conversion layer (40) arranges with anti-reflection layer (58), colour correction layer (48) and cladding element (62) compartment of terrain.
The device (8) of 13. emitted radiations according to claim 1 and 2, wherein anti-reflection layer (58) is arranged on the outer surface (68) of the first section (64) of cladding element (62).
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007045087 | 2007-09-21 | ||
| DE102007045087.9 | 2007-09-21 | ||
| DE102008005344A DE102008005344A1 (en) | 2007-09-21 | 2008-01-21 | Radiation-emitting component |
| DE102008005344.9 | 2008-01-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008801079846A Division CN101803048B (en) | 2007-09-21 | 2008-08-28 | Radiation-emitting component |
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|---|---|
| CN102347417A CN102347417A (en) | 2012-02-08 |
| CN102347417B true CN102347417B (en) | 2014-10-01 |
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| CN2008801079846A Expired - Fee Related CN101803048B (en) | 2007-09-21 | 2008-08-28 | Radiation-emitting component |
| CN201110340389.0A Expired - Fee Related CN102347417B (en) | 2007-09-21 | 2008-08-28 | Radiation-emitting component |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2008801079846A Expired - Fee Related CN101803048B (en) | 2007-09-21 | 2008-08-28 | Radiation-emitting component |
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| JP (1) | JP5362727B2 (en) |
| KR (1) | KR101460388B1 (en) |
| CN (2) | CN101803048B (en) |
| DE (1) | DE102008005344A1 (en) |
| TW (2) | TW200915624A (en) |
| WO (1) | WO2009036731A2 (en) |
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| DE102012100788A1 (en) * | 2012-01-31 | 2013-08-01 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component with converter element |
| CN103633223B (en) * | 2013-11-13 | 2016-08-17 | 苏州热驰光电科技有限公司 | High light saturating glass substrate LED light device and preparation method thereof |
| WO2016079658A1 (en) * | 2014-11-18 | 2016-05-26 | Industries Yifei Wang Inc. | Led module, methods of manufacturing same and luminaire integrating same |
| KR20240133228A (en) * | 2023-02-28 | 2024-09-04 | 삼성전자주식회사 | Semiconductor light emitting devices |
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| CN1592974A (en) * | 2000-08-08 | 2005-03-09 | 奥斯兰姆奥普托半导体有限责任公司 | Semiconductor chip for optoelectronics and method for production thereof |
| CN1934477A (en) * | 2004-03-16 | 2007-03-21 | 皇家飞利浦电子股份有限公司 | High brightness illumination device with incoherent solid state light source |
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| JPH11145519A (en) | 1997-09-02 | 1999-05-28 | Toshiba Corp | Semiconductor light-emitting element, semiconductor light-emitting device, and image-display device |
| WO2001082384A1 (en) * | 2000-04-26 | 2001-11-01 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor element and method for producing the same |
| US7075112B2 (en) * | 2001-01-31 | 2006-07-11 | Gentex Corporation | High power radiation emitter device and heat dissipating package for electronic components |
| US6630689B2 (en) * | 2001-05-09 | 2003-10-07 | Lumileds Lighting, U.S. Llc | Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa |
| US6455878B1 (en) * | 2001-05-15 | 2002-09-24 | Lumileds Lighting U.S., Llc | Semiconductor LED flip-chip having low refractive index underfill |
| EP1577956A1 (en) | 2002-12-25 | 2005-09-21 | Japan Science and Technology Agency | Light emitting element device, light receiving element device, optical apparatus, fluoride crystal, process for producing fluoride crystal and crucible |
| US7087936B2 (en) * | 2003-04-30 | 2006-08-08 | Cree, Inc. | Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction |
| FR2861853B1 (en) | 2003-10-30 | 2006-02-24 | Soitec Silicon On Insulator | SUBSTRATE WITH INDEX ADAPTATION |
| JP2005157313A (en) * | 2003-10-30 | 2005-06-16 | Arisawa Mfg Co Ltd | Screen for rear projection display |
| JP2006093602A (en) * | 2004-09-27 | 2006-04-06 | Toyoda Gosei Co Ltd | Light emitting element |
| DE102004047640A1 (en) * | 2004-09-30 | 2006-04-13 | Osram Opto Semiconductors Gmbh | Optoelectronic component and housing for an optoelectronic component |
| DE102004047727B4 (en) * | 2004-09-30 | 2018-01-18 | Osram Opto Semiconductors Gmbh | Luminescence diode chip with a converter layer and method for producing a luminescence diode chip with a converter layer |
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- 2008-08-18 TW TW097131452A patent/TW200915624A/en unknown
- 2008-08-18 TW TW101124292A patent/TWI473297B/en not_active IP Right Cessation
- 2008-08-28 US US12/677,320 patent/US8373186B2/en not_active Expired - Fee Related
- 2008-08-28 WO PCT/DE2008/001448 patent/WO2009036731A2/en active Application Filing
- 2008-08-28 CN CN2008801079846A patent/CN101803048B/en not_active Expired - Fee Related
- 2008-08-28 JP JP2010525192A patent/JP5362727B2/en not_active Expired - Fee Related
- 2008-08-28 KR KR1020097025704A patent/KR101460388B1/en active IP Right Grant
- 2008-08-28 CN CN201110340389.0A patent/CN102347417B/en not_active Expired - Fee Related
- 2008-08-28 EP EP08801255.4A patent/EP2198464B1/en not_active Not-in-force
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| CN1592974A (en) * | 2000-08-08 | 2005-03-09 | 奥斯兰姆奥普托半导体有限责任公司 | Semiconductor chip for optoelectronics and method for production thereof |
| CN1934477A (en) * | 2004-03-16 | 2007-03-21 | 皇家飞利浦电子股份有限公司 | High brightness illumination device with incoherent solid state light source |
Also Published As
| Publication number | Publication date |
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| US8373186B2 (en) | 2013-02-12 |
| US8963181B2 (en) | 2015-02-24 |
| WO2009036731A2 (en) | 2009-03-26 |
| KR101460388B1 (en) | 2014-11-10 |
| TWI473297B (en) | 2015-02-11 |
| CN101803048A (en) | 2010-08-11 |
| EP2198464A2 (en) | 2010-06-23 |
| US20130146919A1 (en) | 2013-06-13 |
| TW201242078A (en) | 2012-10-16 |
| JP2010539715A (en) | 2010-12-16 |
| CN102347417A (en) | 2012-02-08 |
| KR20100055357A (en) | 2010-05-26 |
| JP5362727B2 (en) | 2013-12-11 |
| DE102008005344A1 (en) | 2009-04-02 |
| TW200915624A (en) | 2009-04-01 |
| US20100207148A1 (en) | 2010-08-19 |
| WO2009036731A3 (en) | 2009-05-28 |
| EP2198464B1 (en) | 2016-11-16 |
| CN101803048B (en) | 2011-12-21 |
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