CN102321911B - System and method for controlling zone melting furnace for producing silicon single crystal by using abnormity polycrystalline material - Google Patents
System and method for controlling zone melting furnace for producing silicon single crystal by using abnormity polycrystalline material Download PDFInfo
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- CN102321911B CN102321911B CN201110308209.0A CN201110308209A CN102321911B CN 102321911 B CN102321911 B CN 102321911B CN 201110308209 A CN201110308209 A CN 201110308209A CN 102321911 B CN102321911 B CN 102321911B
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- melting furnace
- zone melting
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- 238000004857 zone melting Methods 0.000 title claims abstract description 74
- 239000013078 crystal Substances 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 16
- 239000010703 silicon Substances 0.000 title claims abstract description 16
- 239000000463 material Substances 0.000 title abstract 4
- 239000013598 vector Substances 0.000 claims abstract description 41
- 239000007788 liquid Substances 0.000 claims abstract description 21
- 238000005259 measurement Methods 0.000 claims description 7
- 238000005070 sampling Methods 0.000 claims description 4
- 230000002459 sustained effect Effects 0.000 claims description 4
- 241001269238 Data Species 0.000 claims description 3
- 238000003723 Smelting Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 abstract description 6
- 230000008018 melting Effects 0.000 abstract description 6
- 230000005012 migration Effects 0.000 abstract description 4
- 238000013508 migration Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Time | Offset vector | Center vector | Offset vector after t |
16:05 | (0,0) | (1,1) | (-1,-1) |
16:06 | (0,0) | (0,1) | (0,-1) |
16:07 | (0,0) | (1,0) | (-1,0) |
16:08 | (0,0) | (0,0) | (0,0) |
16:09 | (0,0) | (0,0) | (0,0) |
16:10 | (-1,-1) | (- , ) | (- ,- ) |
16:11 | (0,-1) | ? | ? |
16:12 | (-1,0) | ? | ? |
16:13 | (0,0) | ? | ? |
16:14 | (0,0) | ? | ? |
16:15 | (- ,- ) | ? | ? |
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201110308209.0A CN102321911B (en) | 2011-10-12 | 2011-10-12 | System and method for controlling zone melting furnace for producing silicon single crystal by using abnormity polycrystalline material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110308209.0A CN102321911B (en) | 2011-10-12 | 2011-10-12 | System and method for controlling zone melting furnace for producing silicon single crystal by using abnormity polycrystalline material |
Publications (2)
Publication Number | Publication Date |
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CN102321911A CN102321911A (en) | 2012-01-18 |
CN102321911B true CN102321911B (en) | 2014-04-09 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201110308209.0A Active CN102321911B (en) | 2011-10-12 | 2011-10-12 | System and method for controlling zone melting furnace for producing silicon single crystal by using abnormity polycrystalline material |
Country Status (1)
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CN (1) | CN102321911B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012213715A1 (en) | 2012-08-02 | 2014-02-06 | Siltronic Ag | An apparatus for producing a single crystal by crystallizing the single crystal at a melting zone |
CN106989692B (en) * | 2017-04-20 | 2019-03-15 | 浙江富通光纤技术有限公司 | The measurement method and device of preform |
CN110727238A (en) * | 2019-11-07 | 2020-01-24 | 府谷县旭丽机电技术有限公司 | Double-station plasma fusion equipment control system and method |
-
2011
- 2011-10-12 CN CN201110308209.0A patent/CN102321911B/en active Active
Non-Patent Citations (5)
Title |
---|
Φ105mm区熔硅单晶的生长工艺研究;郭立洲;《稀有金属》;20021110(第06期);第514-516页 * |
我国人工晶体生长设备的回顾与展望;李留臣等;《人工晶体学报》;20020630(第03期);第328-331页 * |
李留臣等.我国人工晶体生长设备的回顾与展望.《人工晶体学报》.2002,(第03期), |
沈浩平,李翔,昝兴利,汪雨田等.CFZ单晶的生产及特点.《半导体杂志》.1998,(第03期), * |
郭立洲.Φ105mm区熔硅单晶的生长工艺研究.《稀有金属》.2002,(第06期), |
Also Published As
Publication number | Publication date |
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CN102321911A (en) | 2012-01-18 |
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Effective date of registration: 20181102 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 300384 Tianjin Xiqing District Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Patentee before: TIANJIN HUANOU SEMICONDUCTOR MATERIAL TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20191225 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 in Tianjin Binhai high tech Zone Huayuan Industrial Zone (outer ring) Haitai Road No. 12 Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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