CN102312197A - Copper, indium, gallium and selenide (CIGS) solar battery processing equipment and method - Google Patents
Copper, indium, gallium and selenide (CIGS) solar battery processing equipment and method Download PDFInfo
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- CN102312197A CN102312197A CN2010102283990A CN201010228399A CN102312197A CN 102312197 A CN102312197 A CN 102312197A CN 2010102283990 A CN2010102283990 A CN 2010102283990A CN 201010228399 A CN201010228399 A CN 201010228399A CN 102312197 A CN102312197 A CN 102312197A
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Abstract
The invention provides copper, indium, gallium and selenide (CIGS) solar battery processing equipment and a CIGS solar battery processing method. The equipment comprises a buffer cavity, a first cavity, a second cavity and a mechanical device. The first cavity is adjacent to the buffer cavity and is provided with a coating deposition device; and the second cavity is adjacent to the buffer cavity and is provided with a heat treatment device which comprises a base, a storage groove, a first heater, a guide pipe and a cover plate. The base is used for positioning a base plate. The storage groove is positioned outside the second cavity and is used for accommodating a melting material; the first heater is used for heating the melting material; and one end of the guide pipe is pivoted with the storage groove and the other end of the guide pipe is positioned in the second cavity. The cover plate is arranged on the part, corresponding to an opening end in the second cavity, of the guide pipe; and the cover plate is also provided with an adjustable pore. The mechanical device is used for driving the base plate to move to and fro among the buffer cavity, the first cavity and the second cavity.
Description
Technical field
The invention relates to a kind of equipment of solar cell processing procedure, know clearly it, be meant a kind of equipment of the CIGS of being used for solar cell processing procedure especially.
Background technology
Because the earth energy shortage is on the rise with the problem that warms up phenomenon; The whole world begins to be devoted to the research of energy development; It is first-selected during sun power is more individual; And silicon is the material that the most extensively applies to solar cell at present, but for reducing cost and improving photoelectric transformation efficiency, is development in recent years solar cell the most fast with the CIGS solar cell again wherein.
The equipment that becomes known for CIGS solar cell processing procedure is the Nozzle-based that disclosed for No. 7194197 of USP number for example; Vapor-phase; Plume delivery structure for use inproduction of thin-film deposition layer; Wherein this fused semiconductor material must be tied to the base material transmission speed, and this equipment do not have the device be enough to the screening material molecule is set, and causes uncontrollable sedimentary being uniformly distributed with property and equivalence; The Methods andapparatus for treating a work piece with a vaporous element that disclosed for No. 7442413 of USP number and for example; Wherein except that above-mentioned problem; Also can produce Selenium hydride high toxicity gas; And this equipment uses integrated device, except that the bigger accommodation space of bulky needs own, once fault then can't and can remain in operation with the alternative replacing in part; The Atmospheric pressure chemical vapordeposition that is more disclosed for No. 7635647 like USP; Wherein be coated with the fused semiconductor material in the whole base plate scope to scan mode; With regard to four kinds of diverse elements of physical properties of copper-indium-galliun-selenium; Though substrate is held the temperature design, low melting material at high temperature is easier to evapotranspire, and the composition of whole base plate is difficult for.
Even if the equipment of above-mentioned CIGS solar cell processing procedure can reach the function of making CIGS, but the Selenium hydride (H of high reaction activity
2Se) or hydrogen sulfide (H
2S) be all high toxicity gas, exist its certain harm is all arranged in ecotope or the personnel safety; The steam of selenium or sulphur is prone to appear the macromolecular mass gathering on the other hand, and the CIGS absorption layer that in the use of traditional selenium steam, is drawn still has quite high defect density, causes quality to present unstable.
Summary of the invention
In view of this, main purpose of the present invention is the homogeneity that is to promote heat treated uniform temperature and substrate deposition composition, and improves the quality stability of solar cell.
Secondary objective of the present invention is at the equipment that a kind of CIGS of being used for solar cell processing procedure is provided; So as in the process of making the CIGS solar cell; The hole that reduces between CIGS and molybdenum (Mo) interface forms; Increase the tack between electric charge carrier transmission pipeline and molybdenum (Mo) and CIGS, the photoelectric transformation efficiency of the solar cell that is improved.
Another purpose of the present invention is to keep in the manufacturing processed certain vacuum process environment, in order to the loss of isolated occluding material and thermal source, not only avoids the waste of above-mentioned resource, and improves the security in the use.
A purpose more of the present invention is if equipment failure need keep in repair the time, can locally substitute to change and can continue to make produces, and more can limit the relative position arrangement that suitably adjust each cavity because of the place, so as to reducing cost and increasing the convenience of equipment.
Edge to be reaching above-mentioned purpose, a kind of equipment that is used for CIGS solar cell processing procedure provided by the present invention, and it comprises a buffering cavity, one first cavity, one second cavity and a mechanism.This first cavity is adjacent to this buffering cavity and has a coated film deposition device.This second cavity is adjacent to this buffering cavity and has a thermal treatment unit, and wherein, this thermal treatment unit comprises a pedestal, a storage tanks, a primary heater, a guide wire and a cover plate.This pedestal is in order to locate a substrate; This storage tanks is located at outside this second cavity, in order to a ccontaining melting material; This primary heater is in order to heat a predetermined melting material; This guide wire one end is articulated in this storage tanks, and the opening of the other end is arranged in second cavity and corresponding to this substrate position; Again, this cover plate is arranged at the pairing position of opening end that this guide wire is arranged in this second cavity, and wherein this cover plate also is provided with an adjustable perforate.Moreover this mechanism moves back and forth between this buffering cavity, this first cavity and this second cavity so as to driving this substrate, is convenient to carry out the respectively preset processing procedure of this cavity.
The present invention also comprises a secondary heater, be located on the outside of this guide wire, and this secondary heater can be a heater coil, so as to keeping the temperature in the guide wire pipe.
Again, the enclosed space that forms between the inwall of this second cavity and outer wall is a vacuum, when this substrate is heat-treated in this second cavity, through the vacuum state of this enclosed space, is able to block the influence that heat exchange caused of internal and external environment.Wherein this buffering cavity, first cavity and second cavity are vacuum, and respectively connection place between this cavity respectively is provided with a vacuum valve, this substrate is displaced into respectively can maintains the predetermined processing procedure that carries out each cavity under certain pressure state between this cavity.
According to a kind of equipment that is used for CIGS solar cell processing procedure of above-mentioned embodiment, wherein the pedestal of this thermal treatment unit is a revolving type, and the substrate that is arranged on this pedestal so as to control is able to changing position; This storage tanks comprises a batching hole, is able to replenish the required material of processing procedure in good time, and the melting material of this storage tanks can be selenium (Se) or sulphur (S) either-or; This primary heater can be a heater coil again, so as to heating this melting material.
This cover plate of this thermal treatment unit of the present invention has adjustable perforate still more; And this adjustable perforate is a plurality of array holes; And this cover plate also can comprise a heater coil; In order to heat this cover plate, cooperating above-mentioned this pedestal is that revolving type also can have a Heater Design, is deposited on this substrate so as to impelling this melting material to be uniformly distributed with.Above-mentioned this adjustable perforate can be the switched attenuator switched-mode perforate; Mean and be available for users to be used status of processes and open or close; Initial this adjustable perforate meeting keeps normally off; When this substrate in this second cavity location and when beginning to heat-treat, the beginning is opened this adjustable perforate also lets selenium steam through being deposited on this substrate; Treat that just closing this adjustable perforate when deposition is accomplished continues to overflow to stop selenium steam, make in this back-flow of molten material storage tanks and the waste of saving former material.
According to a kind of equipment that is used for CIGS solar cell processing procedure of above-mentioned embodiment, wherein thermal treatment unit comprises a heat dam, is located on storage tanks and this guide wire outside near this storage tanks one end; Again; The outside of this heat dam also can be encircled and establish a cooling tube; Because of the extreme temperatures of the well heater in this storage tanks and its outside, the setting of this heat dam and this cold water pipe can reduce the operation of temperatures involved nearby device or damage because of overheated, danger such as generation scald in the time of more can avoiding the reinforced or maintenance of personnel.
And equipment of the present invention, wherein this buffering cavity comprises a temperature adjustment device, so as to adjusting this substrate temperature preset temperature that goes up and down.
Moreover, according to another embodiment of the present invention, providing a kind of method of the CIGS of being used for solar cell processing procedure, its step comprises:
(a) through installations one substrate is moved to one first vacuum cavity, via a coated film deposition mode form one contain molybdenum (Mo) lower electrode on substrate;
(b) through these installations this substrate that (a) accomplishes is moved to one second vacuum cavity, make a melting material see through a heat treatment mode, pass the hole of a cover plate and deposit a film on this lower electrode;
(c) again this substrate that (b) accomplishes is moved to this first vacuum cavity through these installations, one first precursor layer and one second precursor layer are deposited on this film; And
(d) again this substrate that (c) accomplishes is moved to this second vacuum cavity through these installations, and heat-treat and form the light absorbing zone that contains CIGS.
The thermal treatment here; Be to utilize the effect of temperature to promote to pile up elemental diffusion and combination reaction in each layer of deposition; Contact (ohmic contact) so that the film that contains molybdenum (Mo) is reached ohmic properties with selenium (Se) reaction, it is residual to reduce after the thermal treatment hole between formed light absorbing zone and lower electrode, again because of the atmosphere of cooperation activation phenomenon; Can make the complete and atmosphere reaction of this absorption layer, promote the absorption layer composition homogeneity whereby.
According to above-mentioned implementation step, wherein the coated film deposition mode can be ald, chemical vapour deposition, metal-organic chemical vapor deposition or physical vapor deposition etc., wherein with the best results of physics vapor phase deposition; Again, this heat treatment mode can be selected from modes such as electron beam, ionic fluid, plasma resonance device or thermo-cracking, wherein again with the best results of plasma resonance device and thermo-cracking.
Method of the present invention again, wherein melting material can be selenium (Se) or sulphur (S), and then this film is for comprising molybdenum (Mo) and selenium (Se), or be the compound of molybdenum (Mo) and sulphur (S); And according to above-mentioned embodiment, wherein those holes of this cover plate are the array hole that is distributed on this cover plate.
Description of drawings
For letting above and other objects of the present invention, characteristic, advantage and the embodiment can be more obviously understandable, the explanation of appended accompanying drawing be following:
Fig. 1 is the synoptic diagram that illustrates according to the equipment of a kind of CIGS solar cell processing procedure of an embodiment of the present invention;
Fig. 2 is the enlarged diagram that illustrates according to second cavity of the equipment of Fig. 1 CIGS solar cell processing procedure;
Fig. 3 A is the synoptic diagram of cover plate of Fig. 1 guide wire that illustrates another embodiment of equipment of CIGS solar cell processing procedure;
Fig. 3 B is the synoptic diagram of cover plate of Fig. 1 guide wire that illustrates another embodiment of equipment of CIGS solar cell processing procedure;
Fig. 4 is the synoptic diagram that illustrates according to the pedestal of second cavity of the equipment of Fig. 1 CIGS solar cell processing procedure;
Fig. 5 is the flow chart of steps that illustrates according to the method for the CIGS solar cell processing procedure of another embodiment of the present invention;
Fig. 6 be one see through the CIGS solar cell processing procedure of Fig. 5 the photo of the CIGS solar cell that produces of method.
[primary clustering nomenclature]
100: buffering cavity 110: pedestal
120: 200: the first cavitys of temperature adjustment device
201: vacuum valve 210: pedestal
220: 300: the second cavitys of coated film deposition device
301: vacuum valve 302: inwall
303: outer wall 304: enclosed space
310: thermal treatment unit 311: pedestal
312: storage tanks 313: batching hole
314: melting material 315: primary heater
316: heat dam 317: cooling tube
318: guide wire 319: secondary heater
320: cover plate 321: the array hole
322: heater coil 400: mechanism
410: moving track 420: the arm device
500: substrate 510: back electrode
520: the first precursor layer 610-640: step
Embodiment
For being illustrated more clearly in CIGS solar battery structure of the present invention, lift preferred embodiment now and cooperate diagram to specify as after.
Please with reference to Fig. 1, it illustrates the equipment synoptic diagram according to a kind of CIGS of being used for solar cell processing procedure of content of the present invention.This equipment comprises a buffering cavity 100, one first cavity 200, one second cavity 300 and a mechanism 400.This first cavity 200 is adjacent to buffering cavity 100 and has a coated film deposition device 220.This second cavity 300 is adjacent to buffering cavity 100 and has a thermal treatment unit 310.This thermal treatment unit 310 mainly comprises a pedestal 311, a storage tanks 312, a primary heater 315, a guide wire 318 and a cover plate 320.This pedestal 311 is in order to locate a substrate 500.This storage tanks 312 is located at outside second cavity 300, in order to a ccontaining melting material 314; This primary heater 315 is in order to heat this melting material 314.One end of this guide wire 318 articulates storage tanks 312, and the opening of the other end is arranged in this second cavity 300; Cover plate 320 is arranged at the opening end institute corresponding position that guide wire 318 is arranged in second cavity 300, and its cover plate 320 also is provided with an adjustable perforate; And this mechanism 400 moves back and forth in 300 of this buffering cavity 100, this first cavity 200 and this second cavitys in order to drive this substrate 500.
This buffering cavity 100 comprises a pedestal 110 and a temperature adjustment device 120.This pedestal 110 is in order to carry and to locate this substrate 500; When this substrate 500 moves when inserting this buffering cavity 100 through this mechanism 400; Can according to demand, operate this substrate 500 of heating of this temperature adjustment device 120 or cooling off this substrate 500 reaches a preset temperature, wherein; For example this well heater can be a heater coil, and this water cooler can be the cold water pipeline.
This first cavity 200 is a vacuum cavity again, and a side that is communicated with buffering cavity 100 has a vacuum valve 201.Have a pedestal 210 and a coated film deposition device 220 in this first cavity 200.This substrate 500 is inserted this first cavity 200 through this mechanism 400 and is positioned on this pedestal 210; This coated film deposition device 220 can store at least a Coating Materials; Can select differing materials to carry out coated film deposition; Wherein, this coated film deposition mode can be atomic layer deposition apparatus, chemical vapor depsotition equipment, metal-organic chemical vapor deposition or physical vapor deposition etc.The coated film deposition device 220 of one embodiment of the invention is provided with three kinds of Coating Materials-molybdenums (Mo), indium (In) and copper gallium alloy (CuGa), and is the physical vapor deposition mode.
More please be many with reference to Fig. 2, be the enlarged diagram of second cavity 300 that illustrates the equipment of Fig. 1 CIGS solar cell processing procedure.This second cavity 300 is a vacuum cavity, and and 100 of this buffering cavitys also be provided with a vacuum valve 301.The enclosed space 304 of the inwall 302 of this second cavity 300 and 303 formation of outer wall is a vacuum; Whereby; When this substrate 500 carries out processing procedure in this second cavity 300, can further control the stable of cavity interior condition, and avoid inside processing to receive the influence of external environment.This storage tanks 312 of the thermal treatment unit 310 of this second cavity 300 is provided with a batching hole 313; Supply the user to insert melting material 314 in the storage tanks 312 or additional this material in processing procedure carries out; Wherein this melting material 314 can be selenium (Se) or sulphur (S), and melting material of the present invention 314 is selenium (Se).Again, this primary heater 315 is a heater coil, is to be looped around outside the storage tanks 312, and continues to provide thermal source to heat the selenium (Se) in this storage tanks 312, selenium (Se) is maintained continue the evaporation selenium steam under 260 ℃-380 ℃ the temperature; This selenium steam can get into this guide wire 318, and arrives these substrate 500 depositions on this pedestal 311 through this guide wire 318 and through its outlet that is positioned at this second cavity 300.
Specifically, the outside of this guide wire 318 can be provided with a secondary heater 319, and this secondary heater 319 can be a heater coil and is surrounded on this guide wire 318 outsides.Because fusion selenium is heated and flashes to selenium steam and possibly be a bigger molecular grouping, if directly be deposited on the substrate 500, possibly cause selenium film deposition inhomogeneous.If through the secondary heater 319 in these guide wire 318 outsides, after selenium steam gets into guide wire 318, provide 500-700 ℃ thermal source to carry out second-heating; Impel the selenium steam molecular grouping to be heated and clash into each other or bump guide wire 318 inwalls, cause this molecular grouping cracking to become littler molecular grouping, wherein; Subset is very fast because of lighter weight and translational speed, arrival exit and be disseminated to substrate 500 early, and the heavier person of molecular grouping quality; Just can sink or be stranded in guide wire 318 lower ends; When waiting to absorb energy and enough being cracked into subset, arrival exit fast filters out less selenium steam molecular grouping whereby and is deposited on the substrate 500 again.
In addition, this thermal treatment unit 310 also comprises a heat dam 316 and a cooling tube 317.This heat dam 316 is located on this primary heater 315 of this storage tanks 312 and secondary heater 319 outsides that this guide wire 318 is positioned at these storage tanks 312 ends, and this cooling tube 317 then is located on outside this heat dam 316.Can import cold water in this cooling tube 317; So as to contacting of isolated this storage tanks 312 and this guide wire 318 and external environment; So that not receiving external environment influence, the required selenium steam molecular grouping of this thermal treatment follow the path direction of this guide wire 318 to arrive at these substrate 500 depositions on this pedestal 311; This moment, this storage tanks 312 and this primary heater 315 were own high with ambient temperature, and this heat dam 312 can be avoided nearby device or personnel's damage.
Cooperate with reference to Fig. 3 A, 3B and 4, wherein Fig. 3 A, 3B illustrate the synoptic diagram of this cover plate 320 of this guide wire 318 of equipment two embodiment of a kind of CIGS of being used for solar cell processing procedure of the present invention again, and Fig. 4 then illustrates the synoptic diagram of pedestal 311.This guide wire 318 also comprises a cover plate 320, and it is installed in the opening end institute corresponding position that guide wire 318 is arranged in second cavity 300, wherein, has a plurality of array holes 321 on this cover plate 320.Specifically, the adjustable perforate on the cover plate 320 can be the switched attenuator switched-mode perforate, and it means and is available for users to be used status of processes and opens or close; For instance, when stopping to be deposited on these substrate 500 actions, can close this adjustable perforate so that this melting material stops to overflow and this storage tanks 312 that refluxes in.
Again; This pedestal 311 of this thermal treatment unit 310 is rotary; Therefore be arranged at this substrate 500 on this pedestal 311, inevitable along with these pedestal 311 rotations, also because those holes 321 are distributed on this cover plate 320 for array and its distribution range is just corresponding with these substrate 500 sizes; When impelling selenium steam to pass through these array hole 321 outside distributions, must increase the even effect that is deposited on this substrate 500.
And this cover plate 320 also comprises a heater coil 322, also can be heated once again when making selenium steam near the array hole 321 of this cover plate 320, avoids producing because of this cover plate 320 of contact the activity of condensing and can keep the selenium steam molecular grouping; The thermal source of these heater coil 322 generations also can be sent to this pedestal 311 surfaces through radiation mode simultaneously; This moment is if this pedestal 311 is set up a well heater 311a (Fig. 4); Just but interaction forms a three-dimensional thermal field; The Design on thermal insulation that cooperates the enclosed space 304 of aforesaid second cavity 300 again is when being able to reduce large-area substrates 500 thermal treatment processing procedures, because of the reduction of these substrate 500 lip temperatures causes sedimentary ununiformity.
Please refer again to Fig. 5, be flow chart of steps, and please cooperate that its step is following with reference to Fig. 1 according to the method for the CIGS solar cell processing procedure of another embodiment of the present invention:
Step 610: through installations one substrate is moved to one first cavity, via a coated film deposition mode form one contain molybdenum (Mo) lower electrode on substrate, wherein the material of this lower electrode is molybdenum (Mo).
Step 620: this substrate of step 610 being accomplished through these installations moves to one second cavity; Make a melting material see through a heat treatment mode; Pass the array hole of a cover plate and deposit a film on this lower electrode; Wherein this melting material is selenium (Se), is the selenium film on this lower electrode and be deposited on.
Step 630: again this substrate that step 620 is accomplished is moved to this first cavity through these installations; One first precursor layer and one second precursor layer are deposited on this selenium film; Wherein this first precursor layer is indium (In) film, and this second precursor layer is copper gallium alloy (CuGa alloy) film.
Step 640: again this substrate that step 630 is accomplished is moved to this second cavity through these installations, carry out a thermal treatment and form the light absorbing zone that contains CIGS.
By above-mentioned steps 610-640, can accomplish CIGS solar cell processing procedure.Wherein this coated film deposition mode can be selected from modes such as ald, chemical vapour deposition, metal-organic chemical vapor deposition or physical vapor deposition, and this heat-treating atmosphere activation method then can be modes such as electron beam, ionic fluid, plasma resonance device or thermo-cracking.
Again please with reference to Fig. 6, its be one see through the CIGS solar cell processing procedure of Fig. 5 the photo of the CIGS solar cell that produces of method.Can know by this photo, lower electrode 510 is deposited on substrate after, see through deposition one selenium film, with first precursor layer, 520 depositions on it, significantly reduced the hole of the lower electrode 510 and first precursor layer 520 again.
Though the present invention discloses as above with embodiment; Right its is not in order to limiting the present invention, anyly is familiar with this art, do not breaking away from the spirit and scope of the present invention; When can doing various changes and retouching, so protection scope of the present invention is as the criterion when looking the scope that appending claims defines.
Claims (21)
1. an equipment that is used for CIGS solar cell processing procedure is characterized in that, comprises:
One buffering cavity;
One first cavity is adjacent to this buffering cavity and has a coated film deposition device;
One second cavity is adjacent to this buffering cavity and has a thermal treatment unit, and wherein this thermal treatment unit comprises:
One pedestal is in order to locate a substrate;
One storage tanks is located at outside this second cavity, in order to a ccontaining melting material;
One primary heater is in order to heat this melting material; And
One guide wire, an end of this guide wire is articulated in this storage tanks, and the other end is arranged in this second cavity; And
One cover plate, this cover plate are arranged at the opening end institute corresponding position that this guide wire is arranged in this second cavity, and wherein this cover plate also is provided with an adjustable perforate;
One mechanism moves back and forth between this buffering cavity, this first cavity and this second cavity in order to drive this substrate.
2. a kind of equipment that is used for CIGS solar cell processing procedure according to claim 1 is characterized in that, also comprises:
One secondary heater is positioned at the outside of this guide wire.
3. a kind of equipment that is used for CIGS solar cell processing procedure according to claim 2 is characterized in that this secondary heater is a heater coil.
4. a kind of equipment that is used for CIGS solar cell processing procedure according to claim 1 is characterized in that the enclosed space that forms between the inwall of this second cavity and outer wall is vacuum.
5. a kind of equipment that is used for CIGS solar cell processing procedure according to claim 1 is characterized in that, this buffering cavity, this first cavity and this second cavity are vacuum cavity.
6. a kind of equipment that is used for CIGS solar cell processing procedure according to claim 1 is characterized in that, the corresponding connection place vacuum valve that is pivoted between this buffering cavity, this first cavity and this second cavity.
7. a kind of equipment that is used for CIGS solar cell processing procedure according to claim 1 is characterized in that this pedestal of this thermal treatment unit is a revolving type.
8. a kind of equipment that is used for CIGS solar cell processing procedure according to claim 1 is characterized in that this pedestal also is provided with a well heater.
9. a kind of equipment that is used for CIGS solar cell processing procedure according to claim 1 is characterized in that this storage tanks comprises a batching hole.
10. a kind of equipment that is used for CIGS solar cell processing procedure according to claim 1 is characterized in that the melting material of this storage tanks is selenium or sulphur.
11. a kind of equipment that is used for CIGS solar cell processing procedure according to claim 1 is characterized in that this primary heater is a heater coil.
12. a kind of equipment that is used for CIGS solar cell processing procedure according to claim 1 is characterized in that, this adjustable perforate is to be array to distribute.
13. a kind of equipment that is used for CIGS solar cell processing procedure according to claim 1 is characterized in that this cover plate also comprises a heater coil.
14. a kind of equipment that is used for CIGS solar cell processing procedure according to claim 1 is characterized in that this thermal treatment unit also comprises:
One heat dam, this heat dam are located on this storage tanks and this guide wire outside near storage tanks one end.
15. a kind of equipment that is used for CIGS solar cell processing procedure according to claim 14 is characterized in that this thermal treatment unit also comprises:
One cooling tube, this cooling tube is located on the outside of this heat dam.
16. a kind of equipment that is used for CIGS solar cell processing procedure according to claim 14 is characterized in that this buffering cavity comprises a temperature adjustment device.
17. a method that is used for CIGS solar cell processing procedure is characterized in that, its step comprises:
(a) through installations one substrate is moved to one first cavity, via a coated film deposition mode form one contain molybdenum lower electrode on this substrate;
(b) through these installations this substrate that (a) accomplishes is moved to one second cavity, make a melting material see through a heat treatment mode, pass a plurality of adjustable hole of a cover plate and deposit a film on this lower electrode;
(c) again this substrate that (b) accomplishes is moved to this first cavity through these installations, one first precursor layer and one second precursor layer are deposited on this film; And
(d) again this substrate that (c) accomplishes is moved to this second cavity through these installations, and heat-treat and form the light absorbing zone that contains CIGS.
18. a kind of method that is used for CIGS solar cell processing procedure according to claim 17 is characterized in that this coated film deposition mode can be ald, chemical vapour deposition, metal-organic chemical vapor deposition or physical vapor deposition.
19. a kind of method that is used for CIGS solar cell processing procedure according to claim 17 is characterized in that this heat treatment mode can be electron beam, ionic fluid, plasma resonance device or thermo-cracking.
20. a kind of method that is used for CIGS solar cell processing procedure according to claim 17 is characterized in that melting material is selenium or sulphur.
21. a kind of method that is used for CIGS solar cell processing procedure according to claim 17 is characterized in that, the adjustable hole of those of this cover plate is that array is arranged.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010102283990A CN102312197A (en) | 2010-07-08 | 2010-07-08 | Copper, indium, gallium and selenide (CIGS) solar battery processing equipment and method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010102283990A CN102312197A (en) | 2010-07-08 | 2010-07-08 | Copper, indium, gallium and selenide (CIGS) solar battery processing equipment and method |
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| CN102312197A true CN102312197A (en) | 2012-01-11 |
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| CN102965641A (en) * | 2012-12-05 | 2013-03-13 | 中国电子科技集团公司第十八研究所 | Selenizing method of CIGS (Copper Indium Gallium Selenide) layer of thin film solar cell |
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| CN112201709A (en) * | 2020-09-25 | 2021-01-08 | 暨南大学 | Antimony selenide thin film solar cell and preparation method and application thereof |
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| CN102965641A (en) * | 2012-12-05 | 2013-03-13 | 中国电子科技集团公司第十八研究所 | Selenizing method of CIGS (Copper Indium Gallium Selenide) layer of thin film solar cell |
| CN110408891A (en) * | 2019-07-31 | 2019-11-05 | 河南城建学院 | A kind of lamination evaporation source |
| CN110408891B (en) * | 2019-07-31 | 2021-09-07 | 河南城建学院 | Laminated evaporation source device |
| CN112201709A (en) * | 2020-09-25 | 2021-01-08 | 暨南大学 | Antimony selenide thin film solar cell and preparation method and application thereof |
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