CN102280542B - Method for growing GaN-based light emitting diode multiquantum well - Google Patents
Method for growing GaN-based light emitting diode multiquantum well Download PDFInfo
- Publication number
- CN102280542B CN102280542B CN 201110258692 CN201110258692A CN102280542B CN 102280542 B CN102280542 B CN 102280542B CN 201110258692 CN201110258692 CN 201110258692 CN 201110258692 A CN201110258692 A CN 201110258692A CN 102280542 B CN102280542 B CN 102280542B
- Authority
- CN
- China
- Prior art keywords
- growth
- gallium nitride
- gan
- quantum well
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Led Devices (AREA)
Abstract
The invention discloses a method for growing a GaN-based light emitting diode multiquantum well. A light emitting diode epitaxial wafer structure comprises a substrate, a low-temperature buffer layer, an undoped GaN (u-GaN) high-temperature buffer layer, an AlGaN/GaN super lattice structure, an undoped GaN high-temperature buffer layer, an N-type contact layer, an N-type GaN conductive layer, a luminous layer multiquantum well (MQW) structure, a P-type AlGaN electronic blocking layer, a P-type GaN conductive layer and a P-type contact layer from bottom to top. The method for growing the MQW is different from the traditional method for growing the MQW, an In source is not closed after completion of growing of the well and continuously introduced into a reaction cavity during temperature rise, pressure change, growing atmosphere switching and base growing. In the atmosphere of In, light emitting diodes with the same wavelength are obtained, the quantum well and a base can grow at a relatively high temperature, so a GaN material with high-quality crystal can be obtained to improve the photoelectric characteristic of the light emitting diode.
Description
Technical field
The invention discloses the growing method of a kind of gallium nitride (GaN) based light-emitting diode Multiple Quantum Well, the method can make quantum well and base all can grow under relatively high temperature, thereby obtain the higher gallium nitride material of crystal mass, so that improve the photoelectric characteristic of light-emitting diode.
Background technology
The invention of GaN base high brightness blue led makes and human has realized contributing the full-color demonstration of jumbotron again for the mobile phone screen colorize at the beginning of 21 century in the mid-90 in 20th century.Meanwhile, the invention of GaN base high brightness blue led is also laid a good foundation for the exploitation of blue laser.Following one by one is the great market that replaces the energy-saving illumination of new generation of incandescent lamp and fluorescent lamp.
It is main that present blue-green LED still adopts InGaN/gallium nitride (InGaN/GaN) multi-quantum pit structure.The growing method of research InGaN/GaN Multiple Quantum Well, the interfacial structure of optimization quantum well, the point defect of minimizing quantum well, the internal quantum efficiency that promotes LED remains the target of present industrial circle and academia's pursuit.
Shanghai Blue Light Technology Co., Ltd. discloses a kind of manufacture method of luminous diode multi-quantum well, standby hydrogen (H when layer is built in making
2) replacement nitrogen (N
2), and in manufacturing process, keep temperature-resistant.Chinese Academy of Sciences's CAS Institute of Physics patent disclosure a kind of manufacture method of GaN based multiple quantum well blue light-emitting diode.The multi-quantum pit structure of this diode comprises: aluminium gallium nitride alloy (AlGaN) layer that p-type is mixed; The AlGaN layer that N-shaped mixes; Reach N the quantum well that GaN layer and plain InGaN layer by the p-type doping between the AlGaN layer form; Also be included in AlGaN layer that p-type mixes and plain GaN separator between N the quantum well and reach plain GaN separator between the AlGaN layer of N-shaped doping and N quantum well, thickness by reasonable adjustment GaN separator, can effectively adjust the position of p-n junction, make it to be positioned at the Multiple Quantum Well zone, effectively strengthen the luminous intensity of light-emitting diode.
Summary of the invention
The object of the invention is to propose a kind of growing method of new gallium nitride based light emitting diode Multiple Quantum Well.
Technical scheme of the present invention: a kind of growing method of gallium nitride based light emitting diode Multiple Quantum Well, this LED epitaxial slice structure order from bottom to top is followed successively by substrate, low temperature buffer layer, unadulterated gallium nitride high temperature buffer layer u-GaN, aluminium gallium nitride alloy/gallium nitride AlxGa1-xN/GaN, 0＜x＜1 superlattice structure, unadulterated gallium nitride high temperature buffer layer u-GaN, the N-type contact layer, the n type gallium nitride conductive layer, luminescent layer multi-quantum pit structure MQW, P type aluminium gallium nitride alloy electronic barrier layer, P type gallium nitride conductive layer, P type contact layer; After the growth of n type gallium nitride conductive layer finishes, the growing method of Multiple Quantum Well; Its growing method is as follows: stop to pass into TMGa in the reaction chamber, reduce growth temperature, switching growth atmosphere is pure N2 atmosphere, adjusts the flow of reaction chamber pressure and NH3, after growth conditions is stablized 15 seconds, passes into TMGa, TMIn, growth trap.After the trap growth finished, reaction chamber heated up, and this becomes growth pressure, switched growth atmosphere, continued to pass into TMGa, TMIn, and growth is built; After building the growth end, the reaction chamber cooling, this becomes growth pressure, switches growth atmosphere, continues to pass into TMGa, TMIn, growth trap; Repeating step (2) (3), so circulation, last circulation, completing steps is closed TMIn after (2), switches growth conditions, prepares the growth of P type layer; In the Multiple Quantum Well growth course, In does not close in the source; Heat up, pressure changeable switches growth atmosphere and builds in the growth course the logical In source of reaction chamber continuation; Under the rich In atmosphere like this, obtain the light-emitting diode of same wavelength, quantum well all can be grown under relatively high temperature with the base, thereby obtains the high gallium nitride GaN material of crystal mass, so that improve the photoelectric characteristic of light-emitting diode.
A kind of growing method of gallium nitride based light emitting diode Multiple Quantum Well, the growth cycle number of its quantum well is 6～18.The growth atmosphere of building is N, H gaseous mixture, and its mixed proportion is 20: 2～2: 20.
The growing method of gallium nitride based light emitting diode Multiple Quantum Well, the growth pattern of its quantum well can be the x+y pattern, that is, build for Si mixes for x, y base be not for to mix Si's.
The growing method of gallium nitride based light emitting diode Multiple Quantum Well, the growth pattern of its quantum well can be the m+n+p+s pattern, that is, build for Si mixes for m, builds for not mixing Si for n, and p base is for the Si doping, and s base be not for to mix Si's.
This LED epitaxial slice structure order from bottom to top is followed successively by substrate, low temperature buffer layer, unadulterated gallium nitride high temperature buffer layer u-GaN, aluminium gallium nitride alloy/gallium nitride (Al
xGa
1-xN/GaN, 0＜x＜1) superlattice structure, unadulterated gallium nitride high temperature buffer layer u-GaN, the N-type contact layer, n type gallium nitride conductive layer, luminescent layer Multiple Quantum Well (MQW) structure, P type aluminium gallium nitride alloy electronic barrier layer, P type gallium nitride conductive layer, P type contact layer.It is characterized in that: after the trap growth finished, indium (In) source was not closed; Heat up, pressure changeable switches growth atmosphere and builds in the growth course the logical In source of reaction chamber continuation.The growing method of this kind Multiple Quantum Well is different from traditional Multiple Quantum Well growing method, and concrete growth pattern as shown in Figure 4.Traditional Multiple Quantum Well growth pattern such as Fig. 1 are shown in 2,3.Usually, obtain the good higher growth temperature of GaN material require of crystal mass, and the saturated vapor pressure of In is high, high temperature is easy to decompose, and under typical GaN epitaxial growth temperature, In can not effectively mix.And low-temperature epitaxy, the crystal mass of GaN is poor, and dislocation density is large, can cause light-emitting diode (LED) photoelectric characteristic very poor.The present invention adopts growth pattern shown in Figure 4, in the whole MQW growth course, In does not close in the source, under the rich In atmosphere like this, in the InGaN growth course incident be separated suppressed, obtain the light-emitting diode of same wavelength, quantum well all can be grown under relatively high temperature with the base, thereby obtains the higher GaN material of crystal mass.And this rich In, under the high growth temperature environment, the component of In is easier in the quantum well space fluctuation occurs, form a lot of local energy state, when electronics and hole injection InGaN active layer, caught by these local energy state, the exciton with higher binding energy is just realized radiation recombination at these local attitude places.The impact of QCSE (quantum limit Stark effect) has not only effectively been avoided in the existence of local attitude, and decrease the impact of the defective that may exist in the crystal, thereby can increase substantially the luminous efficiency of LED light-emitting diode.This rich In, under the high growth temperature environment, form the rich In district of similar quantum-dot structure nano-scale in the quantum well, charge carrier is played three-dimensional restriction, make charge carrier more difficult moving to because the non-radiative recombination center that defective etc. cause before radiation recombination occurs, thereby greatly improve the radiation recombination luminous efficiency.Quantum-dot structure more can effectively improve the internal quantum efficiency of LED light-emitting diode.
The present invention is with high-purity hydrogen (H
2) or nitrogen (N
2) as carrier gas, with trimethyl gallium (TMGa), trimethyl aluminium (TMAl), trimethyl indium (TMIn) and ammonia (NH
3) respectively as gallium (Ga), aluminium (A1), indium (In) and nitrogen (N) source, with silane (SiH
4), two luxuriant magnesium (Cp
2Mg) respectively as n, p-type dopant.High temperature, the Multiple Quantum Well of growing under the rich In environment (MQW) can significantly reduce the defective that may exist in the material, improves the luminous efficiency of light-emitting diode (LED).
Description of drawings
The structural representation of a kind of gallium nitride based light emitting diode Multiple Quantum Well of Fig. 1 the present invention; Wherein 1 is that substrate, 2 is that low temperature buffer layer, 3 is that high temperature buffer layer, 4 is aluminium gallium nitride alloy/gallium nitride (Al
xGa
1-xN/GaN, 0＜x＜1) superlattice period structure insert layer, 5 is that high temperature buffer layer, 6 is P type contact layer for P type gallium nitride conductive layer, 11 for P type aluminium gallium nitride alloy electronic barrier layer, 10 for luminescent layer multi-quantum pit structure MQW, 9 for n type gallium nitride conductive layer, 8 for N-type contact layer, 7.
Fig. 2 is known quantum trap growth pattern 1, transverse axis time represents the time, TMIn represents trimethyl indium, TMGa represents trimethyl gallium, " on " expression reaction raw material enter the reaction chamber reaction, " off " expression reaction raw material stop to enter reaction chamber, and " Growth GaN barrier " expression gallium nitride is built layer growth, and Tg represents reaction temperature;
Fig. 3 is known quantum trap growth pattern 2, transverse axis time represents the time, TMIn represents trimethyl indium, TMGa represents trimethyl gallium, " on " expression reaction raw material enter the reaction chamber reaction, " off " expression reaction raw material stop to enter reaction chamber, and " Growth GaN barrier " expression gallium nitride is built layer growth, and Tg represents reaction temperature;
Fig. 4 is known quantum trap growth mode 3, transverse axis time represents the time, TMIn represents trimethyl indium, TMGa represents trimethyl gallium, " on " expression reaction raw material enter the reaction chamber reaction, " off " expression reaction raw material stop to enter reaction chamber, and " Growth GaN barrier " expression gallium nitride is built layer growth, and Tg represents reaction temperature;
Fig. 5 is a kind of luminous diode multi-quantum well growing method of the present invention, transverse axis time represents the time, TMIn represents trimethyl indium, TMGa represents trimethyl gallium, " on " expression reaction raw material enter the reaction chamber reaction, " off " expression reaction raw material stop to enter reaction chamber, and " Growth GaN barrier " expression gallium nitride is built layer growth, and Tg represents reaction temperature.
Embodiment
The present invention is described further below in conjunction with embodiment.
Embodiment 1
(1) substrate 1: be 1050 ℃ with Sapphire Substrate in temperature at first, anneal in the pure hydrogen atmosphere, then carry out nitrogen treatment;
(2) low temperature buffer layer 2: with drop in temperature to 585 ℃, and the thick low temperature GaN nucleating layer of growth 20nm;
(3) high temperature buffer layer 3: after low temperature buffer layer 2 growths finish, stop to pass into TMGa, underlayer temperature is raise 1050 ℃, low temperature buffer layer 2 is carried out annealing in process in position, annealing time is 8 minutes; After the annealing, growth thickness is the plain GaN of the high temperature of 0.8 μ m;
After plain GaN high temperature buffer layer 3 growths of the high temperature that (4) 0.8 μ m are thick finish, aluminium gallium nitride alloy/gallium nitride (Al in 5 cycles of growth in pure hydrogen atmosphere
0.2Ga
0.8N/GaN) superlattice structure 4, aluminium gallium nitride alloy (Al in the superlattice structure 4
0.2Ga
0.8N) thickness with gallium nitride (GaN) is identical, and namely trap is built uniform thickness, is 3nm, and the growth pressure of reaction chamber is 200Torr.
Aluminium gallium nitride alloy/gallium nitride (Al in (5) 5 cycles
0.2Ga
0.8N/GaN) after superlattice structure 4 growths finish, adjust growth conditions with high temperature buffer layer 3, continued growth thickness is the plain GaN high temperature buffer layer 5 of 0.8 μ m.
(6) after plain GaN high temperature buffer layer 5 growths finish, growth N-type contact layer 6, thickness is 2.5 μ m.
(7) after 6 growths of N-type contact layer finished, growth thickness was the n type gallium nitride conductive layer 7 of 1 μ m.
(8) light-emitting layer grows multi-quantum pit structure MQW 8 after 7 growths of n type gallium nitride conductive layer finish: luminescent layer 8 is by the In in 6 cycles
0.3Ga
0.7The N/GaN Multiple Quantum Well forms.The thickness that trap is built is respectively 2.5nm and 15nm, and the growth atmosphere at base is N2: H2=19: 3, and the first two barrier doping Si, rear 4 undope.
(9) after luminescent layer multi-quantum pit structure MQW 8 growths finished, growth thickness was P type aluminium gallium nitride alloy (AlGaN) electronic barrier layer 9 of 80nm.
(10) after electronic barrier layer 9 growths finished, growing P-type gallium nitride conductive layer 10, thickness were 0.2 μ m.
(11) after 10 growths of P type gallium nitride conductive layer finish, growing P-type contact layer 11, P type doping content is 1 * 10
20/ cm
3, growth thickness is 15nm.
After all epitaxy technique growths finish, the temperature of reaction chamber is down to 800 ℃, the pure nitrogen gas atmosphere is carried out annealing in process 10min, then is down to room temperature, finishes the epitaxy technique growth.
Embodiment 1, behind the semiconducter process processing procedures such as cleaning, deposition, photoetching and etching, is divided into the led chip that size is 11 * 11mil.Through the led chip test, measuring current 20mA, single little chip optical output power is 11.5mW, operating voltage 3.20V can be antistatic: Human Body Model 6000V.And traditional epitaxial growth mode, the power output of single little chip light of identical chips processing procedure only is 10.5mW, operating voltage 3.25V can be antistatic: Human Body Model 4000V.
Embodiment 2
The difference of embodiment 2 epitaxy techniques and embodiment 1 is that the growth cycle of MQW Multiple Quantum Well is 12, is the 3+9 pattern, that is: front 3 barrier doping Si, and rear 9 undope.Behind the semiconducter process processing procedures such as cleaning, deposition, photoetching and etching, be divided into the led chip that size is 11 * 11mil.Through the led chip test, measuring current 20mA, single little chip optical output power is 12.2mW, operating voltage 3.20V can be antistatic: Human Body Model 6000V.
Embodiment 3
The difference of embodiment 3 epitaxy techniques and embodiment 1 is that the growth cycle of MQW Multiple Quantum Well is 18, be the 2+4+2+10 pattern, that is: alternating-doping pattern, the MQW of 2 barrier doping Si grows first, then 4 plain MQW grow, the MQW of 2 barrier doping of regrowth Si, 10 the plain MQW that then grow.Behind the semiconducter process processing procedures such as cleaning, deposition, photoetching and etching, be divided into the led chip that size is 11 * 11mil.Through the led chip test, measuring current 20mA, single little chip optical output power is 13.5mW, operating voltage 3.3V can be antistatic: Human Body Model 4000V.
Embodiment 4
The difference of embodiment 4 epitaxy techniques and embodiment 1 is that the growth atmosphere of MQW Multiple Quantum Well Zhonglei is N2: H2=20: 2 through behind the semiconducter process processing procedures such as cleaning, deposition, photoetching and etching, is divided into the led chip that size is 11 * 11mil.Through the led chip test, measuring current 20mA, single little chip optical output power is 11.3mW, operating voltage 3.18V can be antistatic: Human Body Model 6000V.
Embodiment 5
The difference of embodiment 5 epitaxy techniques and embodiment 1 is that the growth atmosphere of MQW Multiple Quantum Well Zhonglei is N2: H2=2: 20 through behind the semiconducter process processing procedures such as cleaning, deposition, photoetching and etching, is divided into the led chip that size is 11 * 11mil.Through the led chip test, measuring current 20mA, single little chip optical output power is 13mW, operating voltage 3.4V can be antistatic: Human Body Model 5000V.
Embodiment 6
The difference of embodiment 6 epitaxy techniques and embodiment 1 is that the growth atmosphere of MQW Multiple Quantum Well Zhonglei is N2: H2=13: 9 through behind the semiconducter process processing procedures such as cleaning, deposition, photoetching and etching, is divided into the led chip that size is 11 * 11mil.Through the led chip test, measuring current 20mA, single little chip optical output power is 12.5mW, operating voltage 3.35V can be antistatic: Human Body Model 6000V.
Superlattice structure is namely: one deck aluminium gallium nitride alloy film of growing first, regrowth one deck gallium nitride film on this layer material, and then growth one deck aluminium gallium nitride alloy film, one deck gallium nitride film ... so circulation, its number of cycles is between 2～20.The beginning layer of this superlattice period structure and end layer material can be the aluminium gallium nitride alloy films, also can be gallium nitride films.
Claims (4)
1. the growing method of a gallium nitride based light emitting diode Multiple Quantum Well, this LED epitaxial slice structure order from bottom to top is followed successively by substrate, low temperature buffer layer, unadulterated gallium nitride high temperature buffer layer u-GaN, aluminium gallium nitride alloy/gallium nitride Al
xGa
1-xN/GaN, 0＜x＜1 superlattice structure, unadulterated gallium nitride high temperature buffer layer u-GaN, N-type contact layer, n type gallium nitride conductive layer, luminescent layer multi-quantum pit structure MQW, P type aluminium gallium nitride alloy electronic barrier layer, P type gallium nitride conductive layer, P type contact layer; It is characterized in that: after the growth of n type gallium nitride conductive layer finishes, the growing method of Multiple Quantum Well; Its growing method is as follows:
(1) stop to pass into TMGa in the reaction chamber, reduce growth temperature, switching growth atmosphere is pure N2 atmosphere, adjusts the flow of reaction chamber pressure and NH3, after growth conditions is stablized 15 seconds, passes into TMGa, TMIn, growth trap;
(2) after the trap growth finished, reaction chamber heated up, and changes growth pressure, and the switching growth atmosphere is N, H gaseous mixture, and its mixed proportion is 20: 2～2: 20, continues to pass into TMGa, TMIn, and growth is built;
(3) after the base growth finished, the reaction chamber cooling changed growth pressure, and the switching growth atmosphere continues to pass into TMGa, TMIn, growth trap;
(4) repeating step (2) (3), so circulation, last circulation, completing steps is closed TMIn after (2), switches growth conditions, prepares the growth of P type layer;
In the Multiple Quantum Well growth course, In does not close in the source; Heat up, pressure changeable switches growth atmosphere and builds in the growth course the logical In source of reaction chamber continuation; Under the rich In atmosphere like this, obtain the light-emitting diode of same wavelength, quantum well all can be grown under relatively high temperature with the base, thereby obtains the high gallium nitride GaN material of crystal mass, so that improve the photoelectric characteristic of light-emitting diode.
2. the growing method of gallium nitride based light emitting diode Multiple Quantum Well as claimed in claim 1, it is characterized in that: the growth cycle number of quantum well is 6～18.
3. as claimed in claim 1, a kind of growing method of gallium nitride based light emitting diode Multiple Quantum Well is characterized in that: the growth pattern of quantum well can be the x+y pattern, that is, build for Si mixes for x, and y base be not for to mix Si's.
4. as claimed in claim 1, a kind of growing method of gallium nitride based light emitting diode Multiple Quantum Well is characterized in that: the growth pattern of quantum well, can be the m+n+p+s pattern, that is, build for the Si doping for m, build for not mixing Si for n, build for the Si doping for p, s base be not for to mix Si's.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110258692 CN102280542B (en) | 2011-09-02 | 2011-09-02 | Method for growing GaN-based light emitting diode multiquantum well |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110258692 CN102280542B (en) | 2011-09-02 | 2011-09-02 | Method for growing GaN-based light emitting diode multiquantum well |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102280542A CN102280542A (en) | 2011-12-14 |
| CN102280542B true CN102280542B (en) | 2013-03-27 |
Family
ID=45105852
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110258692 Active CN102280542B (en) | 2011-09-02 | 2011-09-02 | Method for growing GaN-based light emitting diode multiquantum well |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102280542B (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569571B (en) * | 2012-03-06 | 2015-06-24 | 华灿光电股份有限公司 | Semiconductor light emitting diode and manufacturing method thereof |
| CN102709414B (en) * | 2012-06-11 | 2015-04-01 | 华灿光电股份有限公司 | Epitaxial growth method of novel GaN (gallium nitride)-based LED (light emitting diode) quantum well active region |
| CN103088416A (en) * | 2012-12-29 | 2013-05-08 | 光达光电设备科技（嘉兴）有限公司 | LED (Light-Emitting Diode) epitaxial wafer deposition process and LED epitaxial wafer deposition device |
| CN103390705A (en) * | 2013-07-24 | 2013-11-13 | 广州金鉴检测科技有限公司 | Method of controlling epitaxial growth of thickness of membrane of quantum well |
| CN104377274B (en) * | 2013-08-12 | 2017-05-24 | 展晶科技(深圳)有限公司 | Light-emitting diode and manufacturing method thereof |
| CN103515495B (en) * | 2013-09-13 | 2016-10-19 | 华灿光电股份有限公司 | A kind of growing method of GaN base light-emitting diode chip for backlight unit |
| CN104701431B (en) * | 2014-11-27 | 2017-03-29 | 厦门市三安光电科技有限公司 | A kind of epitaxial structure of light emitting diode and preparation method thereof |
| CN104821352B (en) * | 2015-05-14 | 2018-09-25 | 上海世湖材料科技有限公司 | A kind of InGaN/GaN Quantum Well interface interruption of growth structure and method |
| CN108735864B (en) * | 2018-05-28 | 2019-08-23 | 华灿光电（浙江）有限公司 | A kind of preparation method of LED epitaxial slice |
| CN112349817B (en) * | 2020-11-06 | 2021-07-23 | 辽宁百思特达半导体科技有限公司 | Epitaxial growth method of gallium nitride quantum well |
| CN112510125A (en) * | 2020-11-24 | 2021-03-16 | 华灿光电(苏州）有限公司 | Gallium nitride-based light emitting diode epitaxial wafer and manufacturing method thereof |
| CN113451462B (en) * | 2020-11-24 | 2022-07-26 | 重庆康佳光电技术研究院有限公司 | LED epitaxial structure, preparation method thereof and LED chip |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101847673A (en) * | 2009-03-27 | 2010-09-29 | 大连美明外延片科技有限公司 | GaN-based LED epitaxial wafer and growing method thereof |
| CN101593804B (en) * | 2009-06-26 | 2011-06-08 | 厦门大学 | High-brightness light emitting diode with GaN-based multiquantum-well structure and preparation method thereof |
| CN102044598A (en) * | 2009-10-19 | 2011-05-04 | 大连美明外延片科技有限公司 | GaN-based light-emitting diode epitaxial wafer and growing method thereof |
| US8138494B2 (en) * | 2010-01-27 | 2012-03-20 | Chang Gung University | GaN series light-emitting diode structure |
-
2011
- 2011-09-02 CN CN 201110258692 patent/CN102280542B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN102280542A (en) | 2011-12-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102280542B (en) | Method for growing GaN-based light emitting diode multiquantum well | |
| CN101645480B (en) | Method for enhancing antistatic ability of GaN-based light-emitting diode | |
| CN103022285B (en) | Multi-quantum well layer growing method capable of improving LED luminance | |
| CN102368519B (en) | A kind of method improving semiconductor diode multiple quantum well light emitting efficiency | |
| CN102832306B (en) | A kind of epitaxial structure of high brightness LED and its implementation | |
| CN102664145B (en) | Method for growing asymmetric electron storing layer high-luminance luminous diode by metal organic compound gas phase epitaxy technology | |
| CN102881788A (en) | Epitaxial growth method for improving GaN-based light-emitting diode (LED) quantum well structure to improve carrier recombination efficiency | |
| CN103066174A (en) | Epitaxial structure and growing method for improving gallium nitride (GaN) based light-emitting diode (LED) lighting efficiency | |
| CN101488550A (en) | Manufacturing method for LED in high In ingredient multiple InGaN/GaN quantum wells structure | |
| CN102931303A (en) | Epitaxial structure and growing method thereof | |
| CN103346217A (en) | Method for designing quantum barrier used for enhancing light emitting diode (LED) brightness | |
| CN105552188A (en) | Semiconductor structure and manufacturing method thereof | |
| CN102709424A (en) | Method for improving luminous efficiency of light-emitting diode | |
| CN101355127B (en) | LED quantum well structure capable of improving III group nitride lighting efficiency and growing method thereof | |
| CN106935690B (en) | Epitaxial structure for improving light output power of ultraviolet LED | |
| CN103985798A (en) | LED of novel quantum well structure and method for manufacturing LED | |
| CN103872194B (en) | A kind of epitaxial growth method for improving GaN base LED active area luminous efficiencies | |
| CN104051586A (en) | GaN-based light-emitting diode epitaxial structure and preparation method thereof | |
| CN102903808A (en) | Shallow quantum well growth method for increasing light emitting efficiency of GaN-based LED (Light-Emitting Diode) | |
| CN104916748A (en) | Optical semiconductor element | |
| CN203398149U (en) | Novel GaN-base light emitting diode epitaxial structure | |
| CN103441197B (en) | A kind of GaN base LED epitaxial slice and preparation method thereof | |
| CN109244199B (en) | Preparation method of epitaxial wafer of light emitting diode and epitaxial wafer | |
| CN104253181A (en) | LED (Light Emitting Diode) epitaxy structure with multiple barrier layers | |
| CN104319317B (en) | Epitaxial production method capable of effectively improving P-GaN hole injection layer quality |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: HC SEMITEK (SUZHOU) CO., LTD. Free format text: FORMER OWNER: HC SEMITEK CORPORATION Effective date: 20131204 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 430223 WUHAN, HUBEI PROVINCE TO: 215600 SUZHOU, JIANGSU PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20131204 Address after: 215600 Feng Feng Road, Zhangjiagang Economic Development Zone, Jiangsu, Suzhou Patentee after: China shine photoelectric (Suzhou) Co., Ltd. Address before: 430223 Binhu Road, East Lake New Technology Development Zone, Hubei, China, No. 8, No. Patentee before: HC SemiTek Corporation |