CN102288927A - Giant magnetoresistance (GMR) spin valve magnetic sensor and manufacturing method thereof - Google Patents
Giant magnetoresistance (GMR) spin valve magnetic sensor and manufacturing method thereof Download PDFInfo
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- CN102288927A CN102288927A CN2011101776815A CN201110177681A CN102288927A CN 102288927 A CN102288927 A CN 102288927A CN 2011101776815 A CN2011101776815 A CN 2011101776815A CN 201110177681 A CN201110177681 A CN 201110177681A CN 102288927 A CN102288927 A CN 102288927A
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Abstract
The invention relates to a giant magnetoresistance (GMR) spin valve magnetic sensor and a manufacturing method thereof. A process and a commercial production aspect in the prior art are extremely difficult. The giant magnetoresistance spin valve magnetic sensor comprises a Wheatstone bridge consisting of four magnetic resistors and is characterized in that: the four magnetic resistors which form the Wheatstone bridge are made of two different spin valve materials; two magnetic resistors are made of a common spin valve material, and the other two magnetic resistors are made of the spin valve material with a synthesized anti-ferromagnetic pinned layer; and differential output signals of the Wheatstone bridge consisting of the two pairs of magnetic resistors form a push-pull output in an outer field. The GMR spin valve magnetic sensor is realized by using a spin valve material deposition method twice. The GMR spin valve magnetic sensor has the advantages that: an output signal is maximum, the process is simple and easy to realize and has small size, high sensitivity and high linearity; and the GMR spin valve magnetic sensor is an ideal scheme for realizing industrial production.
Description
Technical field
The present invention relates to a kind of gmr spin valve magneto-dependent sensor and manufacture method thereof, belong to the measurement mechanism technical field.
Background technology
Giant magnetoresistance (GMR) spin valve magnetic dependent sensor can be widely used in that displacement measurement, velocity survey, precision optical machinery are accurately located, technical field such as the automatic sensing in petroleum prospecting system, electric power control, automobile ABS system, speed control and the navigation, guided missile navigation, medicine equipment.With respect to traditional magneto-dependent sensor such as Hall device, AMR device etc., GMR spin valve magnetic dependent sensor all has many advantages at aspects such as size, sensitivity, energy consumption and stability.
Usually adopt wheatstone bridge configuration to realize the design of GMR spin valve magnetic dependent sensor in the prior art.As shown in Figure 1, wheatstone bridge configuration is connected to form by four GMR mistors that are equal to.Wheatstone bridge formula GMR magneto-dependent sensor realizes that the method for signal output has two kinds: first method is that four mistors that are equal to are connected into Wheatstone bridge, two mistors by will be wherein carry out magnetic field shielding, make the electric bridge out of trim after the match outside and obtain electric bridge output.This kind method is applied in U.S. Pat 5569544 and US 7639005.As shown in Figure 2, can four GMR mistors be connected into Wheatstone bridge, and shield wherein two mistor (R with magnetic masking layer (dash area among the figure) by modern integrated device technology
2, R
4).Under the outside magnetic field effect, there are two resistance of magnetic shielding unaffected like this, do not have two resistance (R of magnetic shielding
1, R
3) resistance change, electric bridge output is changed.The output of whole electric bridge promptly reflects the size of external magnetic field.This magnetic masking layer not only the maskable external magnetic field to R
2And R
4Influence, external magnetic field can also be amplified simultaneously.The advantage of this design is that the temperature stability of device is good, highly sensitive.
Second method be on integrated sensor integral wire as shown in Figure 3, the electric current that passes through in lead produces magnetic field; Act on R
1, R
3And R
2, R
4Two pairs of ohmically magnetic directions are opposite, make R like this
1, R
3And R
2, R
4The nailed layer magnetic moment direction opposite, thereby make two pairs of resistance have different response characteristics to the outfield, form push-pull configuration.Resistance R after the match outside just
1, R
3Resistance become big, and R
2, R
4Resistance decreasing; Outside negative after the match, R
1, R
3Resistance decreasing, and R
2, R
4It is big that resistance becomes.This method is described in patent US 7016163 B2 of U.S. Pat 2003/0157368 A1, US 5561368 and U.S. Honeywell company.
Yet the employing second method forms the GMR spin-valve sensor of tool push-pull configuration, and is all very difficult on technology and aspect commercially producing.At first need integral wire on sensor, produce magnetic field by the electric current in the integral wire again, this magnetic direction is at R
1, R
3Go up and R
2, R
4On direction opposite.Also need reach T in intensification
B(Blocking Temperature) also lowers the temperature under the magnetic field that lead produces, and just can make R
1And R
3Pinning direction and R
2, R
4On the contrary, thereby form the electric bridge push-pull configuration, make R
1And R
3Resistance with the variation and the R in outfield
2, R
4On the contrary.Because this scheme has increased the complexity of technology, is unfavorable for the extensive making of device on the silicon chip level, thereby greatly reduces business-like feasibility that this scheme does not obtain practical application.
Summary of the invention
The technical assignment of the technical problem to be solved in the present invention and proposition is the defective that overcomes prior art, a kind of magnetic masking layer that neither needs to add is provided, also do not need to change the pinning layer magnetic moment direction by galvanization and heating means, technology is simple, be easy to realize, size is little, highly sensitive, magneto-dependent sensor and manufacture method thereof that the linearity is good.For this reason, the present invention adopts following technical scheme.
The gmr spin valve magneto-dependent sensor, comprise the Wheatstone bridge of forming by four mistors, it is characterized in that four mistors forming Wheatstone bridge are made by two kinds of different Spin Valve materials, wherein two mistors are made by common Spin Valve material, and two other mistor is made by the Spin Valve material with synthetic anti-ferromagnetic nailed layer, and the differential output signal of the Wheatstone bridge that these two pairs of mistors are formed forms after the match outside and pushes away-La output.Such structure can make the big maximization of output signal.
For the improving and replenishing of technique scheme, can increase following technical characterictic or its combination.
Described mistor by top pinning Spin Valve material, SAF top pinning Spin Valve material, end pinning Spin Valve material, synthetic anti-ferromagnetic at the bottom of pinning Spin Valve material make.
Two pairs of mistors of the Wheatstone bridge of described composition push-pull configuration are that a pair of mistor is made by top pinning Spin Valve material and in addition a pair ofly made or a pair of mistor is made by end pinning spin material by synthetic anti-ferromagnetic top pinning Spin Valve material, and are a pair ofly in addition made by pinning Spin Valve material at the bottom of the synthetic anti-ferromagnetic.
Described top pinning Spin Valve material is made up of Seed Layer, free layer, wall, nailed layer, antiferromagnetic pinning layer and protective seam; Seed layer materials is Ta, NiCr or NiFeCr material; The free layer material is NiFe, NiFeCo, CoFe, Co, CoFeB and composite material thereof; Wall is made up of non-magnetic conductive material, and composition is Cu, Au, Ag, Cr and alloy thereof; Nailed layer is made up of ferromagnetic material, and composition is NiFe, NiFeCo, CoFe, Co and composite material thereof; Antiferromagnetic pinning layer is made up of antiferromagnetic material, and composition is FeMn, NiMn, IrMn, PtMn, PtPdMn or CrPtMn alloy material; The protective seam composition is Ta, NiCr or NiFeCr.
Seed Layer, free layer, wall, antiferromagnetic pinning layer and the protective seam of described synthetic anti-ferromagnetic top pinning Spin Valve material is identical with top pinning Spin Valve material; nailed layer is the synthetic anti-ferromagnetic material; the synthetic anti-ferromagnetic material be ferromagnetic layer/nonmagnetic layer/ferromagnetic layer structure; the ferromagnetic layer composition is NiFe, NiFeCo, CoFe, Co and composite material thereof, nonmagnetic layer composition Ru.
Pinning Spin Valve material is made up of Seed Layer, antiferromagnetic pinning layer, nailed layer, wall, free layer and protective seam at the described end, and seed layer materials can be selected Ta, NiCr or NiFeCr for use; Pinning layer is made up of antiferromagnetic material, and composition is that FeMn, NiMn, IrMn, PtMn, PtPdMn or CrPtMn alloy material or NiO are as pinning layer; Nailed layer is made up of ferromagnetic material, and composition is NiFe, NiFeCo, CoFe, Co and composite material thereof; Wall is made up of non-magnetic conductive material, and composition is Cu, Au, Ag, Cr and alloy thereof; The free layer material is NiFe, NiFeCo, CoFe, Co, CoFeB and composite material thereof; Protective seam is Ta, NiCr or NiFeCr.
The Seed Layer of pinning Spin Valve material, antiferromagnetic pinning layer, wall, free layer and protective seam are formed identical with end pinning Spin Valve material at the bottom of the described synthetic anti-ferromagnetic; nailed layer synthetic anti-ferromagnetic material; the synthetic anti-ferromagnetic material is ferromagnetic layer/nonmagnetic layer/ferromagnetic layer structure; the ferromagnetic layer composition is NiFe, NiFeCo, CoFe, Co and composite material thereof, and the nonmagnetic layer composition is Ru.
Two pairs of mistors in the described Wheatstone bridge are twice deposition processs that adopts the gmr spin valve material, and make by photoetching, etching.
Twice deposition process of described Spin Valve material is for by for the first time depositing top pinning Spin Valve material and etching obtains first pair of mistor, deposit for the second time again behind the deposition one deck insulating material that SAF top pinning Spin Valve material and etching obtain second pair of mistor or by depositing end pinning Spin Valve material for the first time and etching obtains first pair of mistor, deposit at the bottom of the SAF pinning Spin Valve material and etching behind deposition one deck insulating material more for the second time and obtain second pair of mistor.
Described gmr spin valve magneto-dependent sensor is finished by deposition, etching, perforate, passivation technology, and what wherein device substrate adopted is the monocrystalline silicon that has deposited one deck insulating layer material, and this insulating layer material composition is SiO
2Or Si
3N
4, twice deposition of gmr spin valve material and etching obtain forming four resistance of Wheatstone bridge, deposit one deck insulating material then, open the connection window, depositing metal layers, photoetching forms line, the last insulation isolated material that deposits a bed thickness again, and open connecting hole and form external output welded disc.
The GMR spin valve magnetic dependent sensor that the present invention adopts this invention to make is become the Wheatstone bridge of push-pull configuration by two pairs of four opposite Spin Valve magnetosensitive resistor group of response characteristic.The structure difference of the Spin Valve material of twice deposition can obtain two pairs of mistors different to the outfield response characteristic by etching.This GMR spin-valve sensor is realized by the deposition process of twice Spin Valve material.The structure difference of the Spin Valve material of twice deposition can obtain two pairs of mistors different to the outfield response characteristic by etching.The differential output signal of the Wheatstone bridge that these two pairs of mistors are formed forms after the match outside and pushes away-La output, makes the big maximization of output signal.This method does not need integral wire, is applicable to that the technology of silicon chip level realizes.Wheatstone bridge is made up of two pairs of different mistors of Spin Valve material structure, the Spin Valve material structure of forming every pair of mistor is identical, technology is simple, be easy to realize, size is little, highly sensitive, the linearity is good, is the ideal scheme of realizing suitability for industrialized production.
Description of drawings
Fig. 1 is a wheatstone bridge configuration synoptic diagram in the prior art.
Fig. 2 is a bridge-type GMR magnetosensitive device synoptic diagram in the prior art: (a) device plane synoptic diagram, (b) circuit electric bridge isoboles.
Fig. 3 is for being integrated with the spin-valve sensor schematic diagram of lead in the prior art.
Fig. 4 is a top of the present invention pinning spin-valve sensor structural representation.
Fig. 5 is a top of the present invention pinning Spin Valve material structure synoptic diagram: (a) cross section structure synoptic diagram, (b) circuit diagram.
Fig. 6 is the structural representation of synthetic anti-ferromagnetic layer of the present invention (SAF) top pinning Spin Valve material.
Fig. 7 is synthetic anti-ferromagnetic layer (SAF) structure of the present invention and magnetized state synoptic diagram thereof.
Fig. 8 is the structural representation of the end of the present invention pinning spin-valve sensor:: (a) cross section structure synoptic diagram, (b) circuit diagram.
Fig. 9 is a end of the present invention pinning Spin Valve material structure synoptic diagram.
Figure 10 is the structural representation of pinning Spin Valve material at the bottom of the SAF of the present invention.
Figure 11 is the structural representation of the snakelike mistor of the present invention.
Figure 12 (a) is the structural representation of the common Spin Valve of the present invention.
Figure 12 (b) is the variation diagram of the common Spin Valve resistance of the present invention with externally-applied magnetic field.
Figure 13 (a) is the structural representation of SAF Spin Valve of the present invention.
Figure 13 (b) is the variation diagram of SAF Spin Valve resistance of the present invention with externally-applied magnetic field.
Figure 14 is the variation diagram of Spin Valve electric bridge output of the present invention with externally-applied magnetic field.
Figure 15 is the technology cross section structure synoptic diagram of GMR spin-valve sensor of the present invention.
Embodiment
Below in conjunction with specification drawings and specific embodiments the essence of an invention characteristics are further described.
Fig. 1-3 partly has been described in background technology, does not repeat them here.
As shown in Figure 4, in the pinning spin-valve sensor structural representation of top, the magneto-dependent sensor of GMR Spin Valve material of the present invention is to adopt GMR spin valve magnetic dependent sensor to be become the Wheatstone bridge of push-pull configuration by two pairs of four opposite Spin Valve magnetosensitive resistor group of response characteristic.This method does not need integral wire, is applicable to that the technology of silicon chip level realizes.Wheatstone bridge is made up of two pairs of different mistors of Spin Valve material structure, and the Spin Valve material structure of forming every pair of mistor is identical.First couple of mistor R
1, R
3Can make second couple of mistor R by simple top pinning Spin Valve material
2, R
4Can be made by SAF top pinning Spin Valve material.
Top of the present invention pinning Spin Valve material structure as shown in Figure 5 is made up of Seed Layer, free layer, wall, nailed layer, antiferromagnetic pinning layer and protective seam.Seed layer materials can be selected Ta, NiCr or NiFeCr for use; The free layer material can be selected NiFe, NiFeCo, CoFe, Co, CoFeB and composite material thereof for use; Wall is made up of non-magnetic conductive material, can be Cu, Au, Ag, Cr and alloy thereof; Nailed layer is made up of ferromagnetic material, can be NiFe, NiFeCo, CoFe, Co and composite material thereof; Pinning layer is made up of antiferromagnetic material, is generally FeMn, NiMn, IrMn, PtMn, PtPdMn, CrPtMn alloy material; Protective seam adopts Ta, NiCr or NiFeCr usually.
Synthetic anti-ferromagnetic as shown in Figure 6 (SAF) top pinning Spin Valve material structure synoptic diagram, its structure and top pinning Spin Valve material structure shown in Figure 5 are similar.Seed Layer, free layer, wall, antiferromagnetic pinning layer and the protective seam of SAF top pinning Spin Valve material is identical with top pinning Spin Valve material, and different is that nailed layer replaces with SAF.
In as shown in Figure 7 synthetic anti-ferromagnetic layer (SAF) structure and magnetized state synoptic diagram thereof, synthetic anti-ferromagnetic layer (SAF) is made up of ferromagnetic layer/nonmagnetic layer/ferromagnetic layer, ferromagnetic layer can be NiFe, NiFeCo, CoFe, Co and composite material thereof, and nonmagnetic layer generally adopts Ru.Usually the typical material structure that adopts is CoFe/Ru/CoFe.
Shown in pinning spin-valve sensor structural representation at the bottom of Fig. 8, the present invention forms two pairs of resistance of Wheatstone bridge also can be made first couple of mistor R by end pinning Spin Valve material
1, R
3Can make by pinning Spin Valve material of the simple end, and second couple of mistor R
2, R
4Can be made by pinning Spin Valve material at the bottom of the SAF.
As shown in Figure 9, pinning Spin Valve material structure is made up of Seed Layer, antiferromagnetic pinning layer, nailed layer, wall, free layer and protective seam the end of the present invention.Seed layer materials can be selected Ta, NiCr or NiFeCr for use; Pinning layer is made up of antiferromagnetic material, is generally FeMn, NiMn, IrMn, PtMn, PtPdMn, CrPtMn alloy material, also can adopt NiO as pinning layer; Nailed layer is made up of ferromagnetic material, can be NiFe, NiFeCo, CoFe, Co and composite material thereof; Wall is made up of non-magnetic conductive material, can be Cu, Au, Ag, Cr and alloy thereof; The free layer material can be selected NiFe, NiFeCo, CoFe, Co, CoFeB and composite material thereof for use; Protective seam adopts Ta, NiCr or NiFeCr usually.
As shown in figure 10, the structure of pinning Spin Valve material and end pinning Spin Valve material structure shown in Figure 9 are similar at the bottom of the SAF.Seed Layer at the bottom of the SAF in the pinning Spin Valve material, antiferromagnetic pinning layer, wall, free layer and protective seam are identical with respective layer in the end pinning Spin Valve material, and different is that nailed layer replaces with SAF.The SAF material structure is made up of ferromagnetic layer/nonmagnetic layer/ferromagnetic layer as shown in Figure 7, and is identical with SAF layer used in the pinning Spin Valve material of SAF top.
In the described GMR spin valve magnetic of this patent dependent sensor, two pairs of mistors forming Wheatstone bridge all are operated under the linear model, it is to the response characteristic difference of externally-applied magnetic field: a pair of mistor increases with the increase in outfield, and the increase with the outfield reduces and another is to mistor.
As shown in figure 11, typical GMR mistor is usually designed to serpentine shaped.
As shown in figure 12, adopt the principle of work of the Spin Valve material of common nailed layer.
As shown in figure 13, adopt the principle of work of SAF as the Spin Valve material of nailed layer.
Wherein the direction of magnetization of nailed layer is fixed on the Y direction by the exchange-coupling interaction with antiferromagnetic pinning layer, and the direction of magnetization of free layer is not fixed, and can rotate with the variation of field signal.The magnetic resistance Bianization ⊿ R of giant magnetoresistance changes with the free layer direction of magnetization, and is proportional to the sine value of free layer direction of magnetization and X-axis angle (θ).Can release according to energy balance relations, if adopt a pair of mistor ， ⊿ R of common nailed layer to be proportional to externally-applied magnetic field intensity; Another that then adopts the SAF nailed layer is inversely proportional to externally-applied magnetic field intensity to mistor ， ⊿ R.Vice versa.
As shown in figure 14, the mistor R that makes by common Spin Valve material
1, R
3With the mistor R that makes by SAF Spin Valve material
2, R
4Two pairs of Wheatstone bridge formation push-pull configurations that mistor is formed, push-pull configuration makes the output signal maximization of GMR magneto-dependent sensor.Under the effect in outfield, electric bridge out of trim output signal, its output signal strength and outfield are proportional.
If R
1, R
2, R
3, R
4Four resistances equate, are 5000 ohm, and have identical giant magnetoresistance effect, such as 7%.The sensitivity of supposing four mistors is identical, and such as being 0.2%/V/Oe, then formed electric bridge output signal will be as shown in figure 15.The operation interval of electric bridge is-35Oe～+ 35Oe, electric bridge output is about 2mV/V/Oe.
The making of the described GMR spin valve magnetic of patent of the present invention dependent sensor need utilize the modern device processing technology.Device technology is simple, can finish through a series of processing technologys such as deposition, etching, perforate, passivation on original silicon chip.
The technology sectional view of GMR spin valve magnetic dependent sensor as shown in figure 15.The substrate that device adopted has normally deposited the monocrystalline silicon of one deck insulating layer material, and this insulating layer material can be SiO
2Or Si
3N
4At first deposition one deck GMR Spin Valve material 1 on substrate obtains first pair of Spin Valve magnetosensitive resistance R by photoetching process and etching
1And R
3Then, deposit one deck insulating material thereon.This insulation course can be Al
2O
3, also can be Si
3N
4The deposition GMR Spin Valve material 2 different with GMR Spin Valve material 1 structure on insulating layer material obtains second pair of Spin Valve magnetosensitive resistance R by photoetching process and etching more subsequently
2, R
4Next, as deposition one deck insulating material, open the connection window by the series of process flow process, depositing metal layers, photoetching forms line, deposits the insulation isolated material of a bed thickness at last again, and opens connecting hole and form external output welded disc.
Gmr spin valve magneto-dependent sensor shown in the above accompanying drawing 4-15 and manufacture method thereof are specific embodiments of the invention, substantive distinguishing features and obvious improvement that the present invention gives prominence to have been embodied, can be according to the use needs of reality, making amendment in aspects such as circuit, specification, material and arrangement mode to GMR mistor and Wheatstone bridge, seldom gives unnecessary details at this.
Claims (10)
1. gmr spin valve magneto-dependent sensor, comprise the Wheatstone bridge of forming by four mistors, it is characterized in that four mistors forming Wheatstone bridge are made by two kinds of different Spin Valve materials, wherein two mistors are made by common Spin Valve material, and two other mistor is made by the Spin Valve material with synthetic anti-ferromagnetic nailed layer, and the differential output signal of the Wheatstone bridge that these two pairs of mistors are formed forms after the match outside and pushes away-La output.
2. gmr spin valve magneto-dependent sensor according to claim 1 is characterized in that pinning Spin Valve material is made at the bottom of described mistor is by top pinning Spin Valve material, SAF top pinning Spin Valve material, end pinning Spin Valve material, synthetic anti-ferromagnetic.
3. gmr spin valve magneto-dependent sensor according to claim 1, two pairs of mistors that it is characterized in that the Wheatstone bridge of described composition push-pull configuration are that a pair of mistor is made by top pinning Spin Valve material and in addition a pair ofly made or a pair of mistor is made by end pinning spin material by synthetic anti-ferromagnetic top pinning Spin Valve material, and are a pair ofly in addition made by pinning Spin Valve material at the bottom of the synthetic anti-ferromagnetic.
4. according to the described gmr spin valve magneto-dependent sensor of the arbitrary claim of 1-3, it is characterized in that described top pinning Spin Valve material is made up of Seed Layer, free layer, wall, nailed layer, antiferromagnetic pinning layer and protective seam; Seed layer materials is Ta, NiCr or NiFeCr material; The free layer material is NiFe, NiFeCo, CoFe, Co, CoFeB and composite material thereof; Wall is made up of non-magnetic conductive material, and composition is Cu, Au, Ag, Cr and alloy thereof; Nailed layer is made up of ferromagnetic material, and composition is NiFe, NiFeCo, CoFe, Co and composite material thereof; Antiferromagnetic pinning layer is made up of antiferromagnetic material, and composition is FeMn, NiMn, IrMn, PtMn, PtPdMn or CrPtMn alloy material; The protective seam composition is Ta, NiCr or NiFeCr.
5. according to the gmr spin valve magneto-dependent sensor described in the arbitrary claim of 1-3; the Seed Layer, free layer, wall, antiferromagnetic pinning layer and the protective seam that it is characterized in that described synthetic anti-ferromagnetic top pinning Spin Valve material are identical with top pinning Spin Valve material; nailed layer is the synthetic anti-ferromagnetic material; the synthetic anti-ferromagnetic material be ferromagnetic layer/nonmagnetic layer/ferromagnetic layer structure; the ferromagnetic layer composition is NiFe, NiFeCo, CoFe, Co and composite material thereof, nonmagnetic layer composition Ru.
6. according to the described gmr spin valve magneto-dependent sensor of the arbitrary claim of 1-3, it is characterized in that pinning Spin Valve material of the described end is made up of Seed Layer, antiferromagnetic pinning layer, nailed layer, wall, free layer and protective seam, seed layer materials can be selected Ta, NiCr or NiFeCr for use; Pinning layer is made up of antiferromagnetic material, and composition is that FeMn, NiMn, IrMn, PtMn, PtPdMn or CrPtMn alloy material or NiO are as pinning layer; Nailed layer is made up of ferromagnetic material, and composition is NiFe, NiFeCo, CoFe, Co and composite material thereof; Wall is made up of non-magnetic conductive material, and composition is Cu, Au, Ag, Cr and alloy thereof; The free layer material is NiFe, NiFeCo, CoFe, Co, CoFeB and composite material thereof; Protective seam is Ta, NiCr or NiFeCr.
7. according to the described gmr spin valve magneto-dependent sensor of the arbitrary claim of 1-3; it is characterized in that the Seed Layer of pinning Spin Valve material at the bottom of the described synthetic anti-ferromagnetic, antiferromagnetic pinning layer, wall, free layer and protective seam form identical with end pinning Spin Valve material; nailed layer synthetic anti-ferromagnetic material; the synthetic anti-ferromagnetic material is ferromagnetic layer/nonmagnetic layer/ferromagnetic layer structure; the ferromagnetic layer composition is NiFe, NiFeCo, CoFe, Co and composite material thereof, and the nonmagnetic layer composition is Ru.
8. according to the manufacture method of the described gmr spin valve magneto-dependent sensor of the arbitrary claim of 1-3, it is characterized in that two pairs of mistors in the described Wheatstone bridge are twice deposition processs that adopts the gmr spin valve material, and make by photoetching, etching.
9. the manufacture method of giant magnetoresistance magneto-dependent sensor according to claim 8, twice deposition process that it is characterized in that described Spin Valve material is for by depositing top pinning Spin Valve material for the first time and etching obtains first pair of mistor, deposit for the second time again behind the deposition one deck insulating material that SAF top pinning Spin Valve material and etching obtain second pair of mistor or by depositing end pinning Spin Valve material for the first time and etching obtains first pair of mistor, deposit at the bottom of the SAF pinning Spin Valve material and etching behind deposition one deck insulating material more for the second time and obtain second pair of mistor.
10. the manufacture method of gmr spin valve magneto-dependent sensor according to claim 9, it is characterized in that described gmr spin valve magneto-dependent sensor finishes by deposition, etching, perforate, passivation technology, what wherein device substrate adopted is the monocrystalline silicon that has deposited one deck insulating layer material, and this insulating layer material composition is SiO
2Or Si
3N
4, twice deposition of gmr spin valve material and etching obtain forming four resistance of Wheatstone bridge, deposit one deck insulating material then, open the connection window, depositing metal layers, photoetching forms line, the last insulation isolated material that deposits a bed thickness again, and open connecting hole and form external output welded disc.
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| CN110687485A (en) * | 2019-07-10 | 2020-01-14 | 杭州电子科技大学 | Wide-range vertical sensitive magnetic sensor with feedback on closed-loop core |
| CN113196079A (en) * | 2019-08-23 | 2021-07-30 | 西部数据技术公司 | Magnetic sensor array with one TMR stack including two free layers |
| CN113196078A (en) * | 2019-08-28 | 2021-07-30 | 西部数据技术公司 | Dual free layer TMR magnetic field sensor |
| CN110806529A (en) * | 2019-11-27 | 2020-02-18 | 云南电网有限责任公司电力科学研究院 | Capacitive type equipment insulation performance on-line monitoring system |
| CN113316725A (en) * | 2019-12-27 | 2021-08-27 | 西部数据技术公司 | Magnetic sensor array with laser annealed single TMR film and characterization thereof |
| CN111430535A (en) * | 2020-03-19 | 2020-07-17 | 西安交通大学 | GMR magnetic field sensor with adjustable testing sensitivity direction and preparation method thereof |
| CN113314667A (en) * | 2021-04-14 | 2021-08-27 | 山东大学 | Magnetic thin film material structure for generating bias based on SOT effect |
| CN113466759A (en) * | 2021-06-30 | 2021-10-01 | 山东大学 | Single-axis and double-axis magnetic resistance magnetic field sensor and manufacturing method |
| CN118091233A (en) * | 2024-04-26 | 2024-05-28 | 广东电网有限责任公司中山供电局 | Current monitoring device and current monitoring method based on same |
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