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CN102252747A - Micro sound pressure sensor with bionic cricket cilia structure and manufacturing method thereof - Google Patents

Micro sound pressure sensor with bionic cricket cilia structure and manufacturing method thereof Download PDF

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CN102252747A
CN102252747A CN 201110154934 CN201110154934A CN102252747A CN 102252747 A CN102252747 A CN 102252747A CN 201110154934 CN201110154934 CN 201110154934 CN 201110154934 A CN201110154934 A CN 201110154934A CN 102252747 A CN102252747 A CN 102252747A
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cricket
silicon wafer
cilia
photoresist
sensitive diaphragm
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马志波
姜澄宇
苑伟政
刘振亚
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Northwestern Polytechnical University
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Abstract

本发明公开了一种微型仿蟋蟀纤毛结构声压传感器及其制造方法,属于微机电系统(MEMS)领域。该传感器的蟋蟀纤毛结构1位于敏感膜片2上方,敏感膜片2通过支撑梁3连在环形固定结构4上;敏感膜片2与玻璃基底6上的两个检测电极5形成平板式电容结构。当有外来声音激励作用时,仿蟋蟀纤毛结构1发生弯曲变形,带动敏感膜片2上下位移,使得敏感膜片2与两个检测电极5之间的电容产生变化,以此来检测外来声音激励的声压大小。本发明提出的纤毛结构1具有强度高、深宽比大的优点,克服了现有方法SU-8光刻胶构成的纤毛刚度不足、声传感器灵敏度不足的缺点。该传感器可用于海洋、低空和地面运动目标的监测领域。

Figure 201110154934

The invention discloses a sound pressure sensor with a micro-imitation cricket cilium structure and a manufacturing method thereof, belonging to the field of micro-electromechanical systems (MEMS). The cricket cilia structure 1 of the sensor is located above the sensitive diaphragm 2, and the sensitive diaphragm 2 is connected to the ring-shaped fixed structure 4 through the support beam 3; the sensitive diaphragm 2 and the two detection electrodes 5 on the glass substrate 6 form a flat capacitive structure . When there is external sound excitation, the cricket-like cilia structure 1 is bent and deformed, which drives the sensitive diaphragm 2 to move up and down, so that the capacitance between the sensitive diaphragm 2 and the two detection electrodes 5 changes, so as to detect the external sound excitation sound pressure. The ciliary structure 1 proposed by the present invention has the advantages of high strength and large aspect ratio, and overcomes the disadvantages of insufficient rigidity of cilia and insufficient sensitivity of acoustic sensors formed by SU-8 photoresist in the existing method. The sensor can be used in the monitoring fields of ocean, low-altitude and ground moving targets.

Figure 201110154934

Description

一种微型仿蟋蟀纤毛结构声压传感器及其制作方法A kind of miniature cricket imitation cilia structure sound pressure sensor and its manufacturing method

所属领域Field

本发明属于微机电系统(MEMS)领域,尤其涉及一种微型仿蟋蟀纤毛结构声压传感器。The invention belongs to the field of micro-electromechanical systems (MEMS), in particular to a sound pressure sensor with a miniature cricket-like cilia structure.

背景技术 Background technique

声学探测定位技术在海洋、低空和地面运动目标的监测领域有着重要的应用。声压传感器是被动声探测装置中水声信号接收的关键器件,传统机械加工制造的声压传感器体积大,工作频率高,灵敏度低。为了提高目标的探测能力,必须降低声压传感器的工作频率,拓展工作带宽,提高接收灵敏度并减小体积与重量,MEMS技术的发展为声压传感器灵敏度性能的提高和微型化提供了重要的技术手段,增加了单位面积内声压传感器阵列的个数,减小了阵列内声压传感器之间的间距,提高了声压传感器对低频信号的指向性。Acoustic detection and positioning technology has important applications in the monitoring fields of ocean, low-altitude and ground moving targets. The sound pressure sensor is the key device for underwater acoustic signal reception in the passive acoustic detection device. The sound pressure sensor manufactured by traditional machining is large in size, high in operating frequency and low in sensitivity. In order to improve the detection ability of the target, it is necessary to reduce the operating frequency of the sound pressure sensor, expand the working bandwidth, improve the receiving sensitivity and reduce the volume and weight. The development of MEMS technology provides an important technology for the improvement of the sensitivity and miniaturization of the sound pressure sensor. The method increases the number of sound pressure sensor arrays per unit area, reduces the distance between the sound pressure sensors in the array, and improves the directivity of the sound pressure sensors to low-frequency signals.

荷兰特文特大学Krijnen等人研制的仿蟋蟀尾须纤毛结构的声压传感器(MEMS based hairflow-sensors as model systems for acoustic perception studies),采用电容式的检测原理,在敏感膜片上通过两次旋涂SU-8光刻胶、曝光显影后,形成仿蟋蟀纤毛结构,由于其仿蟋蟀纤毛结构采用SU-8光刻胶制作,刚度比较低,致使声压传感器灵敏度不高。The acoustic pressure sensor (MEMS based hairflow-sensors as model systems for acoustic perception studies) developed by Krijnen and others at the University of Twente in the Netherlands, adopts the capacitive detection principle and passes through the sensitive diaphragm twice After spin-coating SU-8 photoresist, exposure and development, a cricket-like cilia structure is formed. Because the cricket-like cilia structure is made of SU-8 photoresist, the stiffness is relatively low, resulting in low sensitivity of the sound pressure sensor.

发明内容 Contents of the invention

为了克服现有仿蟋蟀尾须纤毛结构的声压传感器中纤毛结构的刚度低,灵敏度不高的缺点,同时也为了减小传感器器件的体积,本发明提出了一种新的微型仿蟋蟀纤毛结构声压传感器及其制作方法。In order to overcome the shortcomings of low rigidity and low sensitivity of the cilia structure in the existing sound pressure sensor imitating the cilium structure of the cricket tail, and also to reduce the volume of the sensor device, the present invention proposes a new miniature cricket-like cilia structure Sound pressure sensor and its manufacturing method.

本发明的技术方案是,一种微型仿蟋蟀纤毛结构声压传感器,包括仿蟋蟀纤毛结构1、敏感膜片2、支撑梁3、环形固定结构4、两个检测电极5以及玻璃基底6。仿蟋蟀纤毛结构1位于敏感膜片2的上方并与之连为一体,敏感膜片2通过两个支撑梁3连在环形固定结构4上,且敏感膜片2与环形固定结构4之间存在间隙9;固定结构4与溅射有两个检测电极5的玻璃基底6阳极键合,使敏感膜片2与两个检测电极5之间通过一定间隙形成平板式电容结构,检测敏感膜片2的振动位移。两个检测电极5的金属引线从固定结构4上的导线孔7引出,与外界电源相连。The technical solution of the present invention is a miniature cricket-imitation cilia structure sound pressure sensor, which includes a cricket-imitation cilia structure 1 , a sensitive diaphragm 2 , a support beam 3 , an annular fixing structure 4 , two detection electrodes 5 and a glass substrate 6 . The cricket-like cilia structure 1 is located above the sensitive diaphragm 2 and is integrated with it. The sensitive diaphragm 2 is connected to the annular fixed structure 4 through two support beams 3, and there is a gap between the sensitive diaphragm 2 and the annular fixed structure 4. Gap 9; the fixed structure 4 is anodically bonded to the glass substrate 6 sputtered with two detection electrodes 5, so that a flat capacitive structure is formed between the sensitive diaphragm 2 and the two detection electrodes 5 to detect the sensitive diaphragm 2 vibration displacement. The metal lead wires of the two detection electrodes 5 are led out from the wire hole 7 on the fixed structure 4, and connected to the external power supply.

当有外来声音激励作用时,位于敏感膜片2上的仿蟋蟀纤毛结构1发生弯曲变形,带动敏感膜片2产生上下位移,使得敏感膜片2与两个检测电极5之间的电容产生变化,以此来检测外来声音激励的声压大小。When there is external sound excitation, the cricket-like cilia structure 1 on the sensitive diaphragm 2 is bent and deformed, which drives the sensitive diaphragm 2 to move up and down, so that the capacitance between the sensitive diaphragm 2 and the two detection electrodes 5 changes , in order to detect the sound pressure of external sound excitation.

所述微型仿蟋蟀纤毛结构声压传感器的制作方法,包括如下步骤:The manufacturing method of the described miniature imitation cricket cilia structure sound pressure sensor comprises the following steps:

步骤1:选用标准清洗双面抛光硅片,在硅片背面涂覆光刻胶8,光刻,显影,将掩模版上的环形固定结构4转移到硅片背面。Step 1: Select a standard cleaned double-sided polished silicon wafer, apply a photoresist 8 on the back of the silicon wafer, perform photolithography, develop, and transfer the annular fixed structure 4 on the mask plate to the back of the silicon wafer.

步骤2:高密度等离子体(ICP)刻蚀一定深度硅片背面,形成环形固定结构4、平板电容极板间间距、以及导线孔7,去除光刻胶8。Step 2: Etching the back of the silicon wafer to a certain depth by high-density plasma (ICP) to form a ring-shaped fixed structure 4 , the spacing between plates of the flat capacitor, and wire holes 7 , and remove the photoresist 8 .

步骤3:在硅片背面再次涂覆光刻胶8,光刻,显影,将掩模版上的敏感膜片2转移到硅片背面。Step 3: Coating photoresist 8 on the back of the silicon wafer again, photolithography, developing, and transferring the sensitive film 2 on the mask plate to the back of the silicon wafer.

步骤4:ICP刻蚀硅片背面,形成敏感膜片2下表面,以及敏感膜片2和固定结构4之间的间隙9,并去除光刻胶8。Step 4: ICP etching the back of the silicon wafer to form the lower surface of the sensitive membrane 2 and the gap 9 between the sensitive membrane 2 and the fixed structure 4, and remove the photoresist 8.

步骤5:在玻璃基底6正面溅射金属,涂光刻胶8,光刻显影,刻蚀金属形成两个检测电极5。Step 5: Sputter metal on the front surface of the glass substrate 6, apply photoresist 8, photolithography and develop, and etch the metal to form two detection electrodes 5.

步骤6:将步骤4的硅片背面和步骤5的玻璃基底6正面进行阳极键合。Step 6: Perform anodic bonding of the back side of the silicon wafer in step 4 and the front side of the glass substrate 6 in step 5.

步骤7:硅片正面上涂覆光刻胶8,光刻,显影,将掩模版上的仿蟋蟀纤毛结构1图形转移到硅片正面。Step 7: Coating photoresist 8 on the front side of the silicon wafer, photolithography, developing, and transferring the imitation cricket cilia structure 1 pattern on the mask plate to the front side of the silicon wafer.

步骤8:ICP刻蚀硅片正面,形成仿蟋蟀纤毛结构1和敏感膜片2上表面,去除光刻胶8,完成微型仿蟋蟀纤毛结构声压传感器的制作。Step 8: ICP etching the front side of the silicon wafer to form the cricket-imitation cilia structure 1 and the upper surface of the sensitive diaphragm 2, remove the photoresist 8, and complete the production of the micro-cricket-imitation cilia structure sound pressure sensor.

附图说明 Description of drawings

图1是本发明提出的微型仿蟋蟀纤毛结构声压传感器三维结构示意图Fig. 1 is the three-dimensional structure schematic diagram of the sound pressure sensor of the miniature imitation cricket cilia structure that the present invention proposes

图2是本发明提出的微型仿蟋蟀纤毛结构声压传感器工艺流程示意图Fig. 2 is the technological process schematic diagram of the miniature imitation cricket cilia structure acoustic pressure sensor that the present invention proposes

图中:1-仿蟋蟀纤毛结构,2-敏感膜片,3-支撑梁,4-环形固定结构,5-两个检测电极,6-玻璃基底,7-导线孔,8-光刻胶,9-间隙In the figure: 1-imitation cricket cilia structure, 2-sensitive diaphragm, 3-support beam, 4-annular fixed structure, 5-two detection electrodes, 6-glass substrate, 7-wire hole, 8-photoresist, 9-gap

具体实施方法Specific implementation method

参阅图1,本实施例中的微型仿蟋蟀纤毛结构声压传感器,包括仿蟋蟀纤毛结构1、敏感膜片2、支撑梁3、固定结构4、两个检测电极5以及玻璃基底6;仿蟋蟀纤毛结构1位于敏感膜片2的上方并与之连为一体,仿蟋蟀纤毛结构1的直径为500nm,长度为10μm;敏感膜片2通过两个支撑梁3连在环形固定结构4上,且敏感膜片2与环形固定结构4之间存在20μm间隙9;环形固定结构4与溅射有两个检测电极5的玻璃基底6阳极键合,使敏感膜片2与两个检测电极5之间通过一定间隙形成平板式电容结构,检测敏感膜片2的振动位移。两个检测电极5的金属引线从固定结构4上的导线孔7引出,与外界电源相连。Referring to Fig. 1, the miniature cricket imitation cricket cilia structure sound pressure sensor in the present embodiment comprises imitation cricket cilia structure 1, sensitive diaphragm 2, support beam 3, fixed structure 4, two detection electrodes 5 and glass substrate 6; imitation cricket The ciliary structure 1 is located above the sensitive diaphragm 2 and is integrated with it. The cricket-like cilia structure 1 has a diameter of 500 nm and a length of 10 μm; the sensitive diaphragm 2 is connected to the ring-shaped fixed structure 4 through two supporting beams 3, and There is a 20 μm gap 9 between the sensitive diaphragm 2 and the annular fixed structure 4; the annular fixed structure 4 is anodically bonded to the glass substrate 6 with two detection electrodes 5 sputtered, so that the gap between the sensitive diaphragm 2 and the two detection electrodes 5 A flat capacitive structure is formed through a certain gap to detect the vibration displacement of the sensitive diaphragm 2 . The metal lead wires of the two detection electrodes 5 are led out from the wire hole 7 on the fixed structure 4, and connected to the external power supply.

当有外来声音激励作用时,位于敏感膜片上的仿蟋蟀纤毛结构会发生弯曲变形,带动敏感膜片产生上下位移,使得敏感膜片与玻璃电极之间的电容产生变化,以此来检测外来声音激励的声压大小。When there is external sound excitation, the cricket-like cilia structure on the sensitive diaphragm will bend and deform, driving the sensitive diaphragm to move up and down, causing the capacitance between the sensitive diaphragm and the glass electrode to change, so as to detect the external sound. The sound pressure of the sound excitation.

所述微型仿蟋蟀纤毛结构声压传感器的制作方法,包括如下步骤:The manufacturing method of the described miniature imitation cricket cilia structure sound pressure sensor comprises the following steps:

步骤1:选用<100>晶向,厚度200μm双面抛光硅片。在温度为120℃,体积比为4∶1的98%浓硫酸和30%过氧化氢溶液中沸煮30分钟,然后分别放在碱性过氧化氢溶液(体积比为1∶1∶5的28%氨水、30%过氧化氢和水,75℃)和酸性过氧化氢溶液(体积比为1∶1∶5的36%盐酸、30%过氧化氢和水,75℃)中浸泡10分钟,最后用去离子水将硅片冲洗干净并烘干,完成硅片标准清洗。涂覆光刻胶8,光刻,显影,将掩模版上的环形固定结构4转移到硅片下表面,如图2(a)所示。Step 1: Choose <100> crystal orientation, double-sided polished silicon wafer with a thickness of 200 μm. At a temperature of 120°C, boil in 98% concentrated sulfuric acid and 30% hydrogen peroxide solution with a volume ratio of 4:1 for 30 minutes, and then place them in alkaline hydrogen peroxide solution (with a volume ratio of 1:1:5) Soak in 28% ammonia water, 30% hydrogen peroxide and water, 75°C) and acidic hydrogen peroxide solution (36% hydrochloric acid, 30% hydrogen peroxide and water, 75°C with a volume ratio of 1:1:5, 75°C) for 10 minutes , and finally rinse the silicon wafer with deionized water and dry it to complete the standard cleaning of the silicon wafer. Coating photoresist 8, photolithography, developing, transferring the annular fixed structure 4 on the mask plate to the lower surface of the silicon wafer, as shown in FIG. 2(a).

步骤2:以光刻胶8为掩膜,高密度等离子体(ICP)刻蚀硅片背面,刻蚀深度为5μm,形成环形固定结构4,以及导线孔7,此时平板电容上下极板间间距即为5μm,最后去除光刻胶8,如图2(b)。Step 2: Using the photoresist 8 as a mask, high-density plasma (ICP) etches the back of the silicon wafer to a depth of 5 μm to form a ring-shaped fixed structure 4 and wire holes 7. At this time, the gap between the upper and lower plates of the flat capacitor is The pitch is 5 μm, and finally the photoresist 8 is removed, as shown in FIG. 2( b ).

步骤3:在硅片背面再次涂覆光刻胶8,光刻,显影,将掩模版上的敏感膜片2转移到硅片背面,如图2(c)。Step 3: Apply photoresist 8 again on the back of the silicon wafer, perform photolithography, develop, and transfer the sensitive film 2 on the mask plate to the back of the silicon wafer, as shown in Figure 2(c).

步骤4:以光刻胶8为掩膜,ICP刻蚀硅片背面,刻蚀深度为3μm,形成敏感膜片2和固定结构4之间的间隙9,以及敏感膜片2下表面,此时敏感膜片2的厚度即为3μm,最后去除光刻胶8,如图2(d)。Step 4: Using the photoresist 8 as a mask, ICP etches the back of the silicon wafer with an etching depth of 3 μm to form a gap 9 between the sensitive diaphragm 2 and the fixed structure 4, and the lower surface of the sensitive diaphragm 2. At this time The thickness of the sensitive membrane 2 is 3 μm, and finally the photoresist 8 is removed, as shown in FIG. 2( d ).

步骤5:在玻璃基底6上表面溅射300nm金属铝,涂光刻胶8,光刻,显影,以光刻胶8为掩膜,刻蚀金属铝形成两个检测电极5,如图2(e)。Step 5: Sputter 300nm metal aluminum on the upper surface of the glass substrate 6, apply photoresist 8, photolithography, develop, use photoresist 8 as a mask, etch metal aluminum to form two detection electrodes 5, as shown in Figure 2 ( e).

步骤6:将步骤4的硅片背面和步骤5的玻璃基底6正面进行阳极键合,如图2(f)。Step 6: Perform anodic bonding of the back side of the silicon wafer in step 4 and the front side of the glass substrate 6 in step 5, as shown in FIG. 2(f).

步骤7:硅片正面上涂覆光刻胶8,光刻,显影,将掩模版上的仿蟋蟀纤毛结构1图形转移到硅片正面,如图2(g)。Step 7: Coating photoresist 8 on the front side of the silicon wafer, photolithography, developing, and transferring the cricket-like cilia structure 1 pattern on the mask plate to the front side of the silicon wafer, as shown in Figure 2(g).

步骤8:以光刻胶8为掩膜,ICP刻蚀硅片正面,刻蚀深度为195μm,形成仿蟋蟀纤毛结构1和敏感膜片2上表面,纤毛结构1长度为195μm,敏感膜片2厚度为5μm,最后去除光刻胶8,完成微型仿蟋蟀纤毛结构声压传感器的制作,如图2(h)。Step 8: Using the photoresist 8 as a mask, ICP etches the front side of the silicon wafer with an etching depth of 195 μm to form the cricket-like cilia structure 1 and the upper surface of the sensitive diaphragm 2, the length of the cilia structure 1 is 195 μm, and the sensitive diaphragm 2 The thickness is 5 μm, and finally the photoresist 8 is removed to complete the fabrication of the microscopic cricket-like cilia structure sound pressure sensor, as shown in Figure 2(h).

Claims (2)

1.一种微型仿蟋蟀纤毛结构声压传感器,其特征在于:包括仿蟋蟀纤毛结构(1)、敏感膜片(2)、支撑梁(3)、环形固定结构(4)、两个检测电极(5)以及玻璃基底(6)。仿蟋蟀纤毛结构(1)位于敏感膜片(2)的上方并与之连为一体,敏感膜片(2)通过两个支撑梁(3)连在环形固定结构(4)上,且敏感膜片(2)与环形固定结构(4)之间存在间隙(9);固定结构(4)与溅射有两个检测电极(5)的玻璃基底(6)阳极键合,使敏感膜片(2)与两个检测电极(5)之间通过一定间隙形成平板式电容结构,检测敏感膜片(2)的振动位移。两个检测电极(5)的金属引线从固定结构(4)上的导线孔(7)引出,与外界电源相连。1. A miniature imitation cricket cilia structure sound pressure sensor is characterized in that: comprise imitation cricket cilia structure (1), sensitive diaphragm (2), support beam (3), annular fixed structure (4), two detection electrodes (5) and glass substrate (6). The cricket-like cilia structure (1) is located above the sensitive membrane (2) and is integrated with it. The sensitive membrane (2) is connected to the ring-shaped fixed structure (4) through two support beams (3), and the sensitive membrane There is a gap (9) between the sheet (2) and the annular fixed structure (4); the fixed structure (4) is anodically bonded to the glass substrate (6) sputtered with two detection electrodes (5), so that the sensitive diaphragm ( 2) and the two detection electrodes (5) pass through a certain gap to form a flat capacitive structure to detect the vibration displacement of the sensitive diaphragm (2). The metal lead wires of the two detection electrodes (5) are led out from the wire hole (7) on the fixed structure (4) and connected with the external power supply. 2.一种如权利要求1所述的微型仿蟋蟀纤毛结构声压传感器的制作方法,其特征在于,包括如下步骤:2. a kind of manufacture method of miniature imitation cricket cilia structure sound pressure transducer as claimed in claim 1, is characterized in that, comprises the steps: 步骤1:选用标准清洗双面抛光硅片,在硅片背面涂覆光刻胶(8),光刻,显影,将掩模版上的环形固定结构(4)转移到硅片背面。Step 1: Select a standard cleaning double-sided polished silicon wafer, apply a photoresist (8) on the back of the silicon wafer, perform photolithography, develop, and transfer the annular fixed structure (4) on the mask plate to the back of the silicon wafer. 步骤2:高密度等离子体(ICP)刻蚀一定深度硅片背面,形成环形固定结构(4),平板电容极板间间距,以及导线孔(7),去除光刻胶(8)。Step 2: high-density plasma (ICP) etching the back of the silicon wafer to a certain depth to form a ring-shaped fixed structure (4), the spacing between plates of the flat capacitor, and wire holes (7), and remove the photoresist (8). 步骤3:在硅片背面再次涂覆光刻胶(8),光刻,显影,将掩模版上的敏感膜片(2)转移到硅片背面。Step 3: Coating photoresist (8) on the back of the silicon wafer again, photolithography, developing, and transferring the sensitive film (2) on the mask to the back of the silicon wafer. 步骤4:ICP刻蚀硅片背面,形成敏感膜片(2)下表面,以及敏感膜片(2)和固定结构(4)之间的间隙(9),并去除光刻胶(8)。Step 4: ICP etching the back of the silicon wafer to form the lower surface of the sensitive membrane (2) and the gap (9) between the sensitive membrane (2) and the fixed structure (4), and remove the photoresist (8). 步骤5:在玻璃基底(6)正面溅射金属,涂光刻胶(8),光刻显影,刻蚀金属形成两个检测电极(5)。Step 5: sputtering metal on the front surface of the glass substrate (6), coating photoresist (8), photolithography and developing, and etching the metal to form two detection electrodes (5). 步骤6:将步骤4的硅片背面和步骤(5)的玻璃基底(6)正面进行阳极键合。Step 6: performing anodic bonding on the back side of the silicon wafer in step 4 and the front side of the glass substrate (6) in step (5). 步骤7:硅片正面上涂覆光刻胶(8),光刻,显影,将掩模版上的仿蟋蟀纤毛结构1)图形转移到硅片正面。Step 7: Coating photoresist (8) on the front side of the silicon wafer, photolithography, developing, and transferring the imitation cricket cilia structure 1) pattern on the mask plate to the front side of the silicon wafer. 步骤8:ICP刻蚀硅片正面,形成仿蟋蟀纤毛结构(1)和敏感膜片(2)上表面,去除光刻胶8,完成微型仿蟋蟀纤毛结构声压传感器的制作。Step 8: ICP etching the front side of the silicon wafer to form the cricket-like cilia structure (1) and the upper surface of the sensitive diaphragm (2), remove the photoresist 8, and complete the production of the micro-cricket-like cilia-structure sound pressure sensor.
CN 201110154934 2011-06-09 2011-06-09 Micro sound pressure sensor with bionic cricket cilia structure and manufacturing method thereof Pending CN102252747A (en)

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Application publication date: 20111123