CN102198927A

CN102198927A - Method for etching nanometer pattern on surface of crystalline silicon

Info

Publication number: CN102198927A
Application number: CN2011101009546A
Authority: CN
Inventors: 杜祖亮; 吴国运; 蒋晓红; 王书杰
Original assignee: Henan University
Current assignee: Henan University
Priority date: 2011-04-22
Filing date: 2011-04-22
Publication date: 2011-09-28

Abstract

The invention belongs to the technical field of nanometer pattern processing, and in particular relates to a method for etching a nanometer pattern on the surface of crystalline silicon. The surface of the crystalline silicon is directly etched by an atomic force microscope. The surface of the crystalline silicon is directly etched by the atomic force microscope, so that the processing procedure is not influenced by an environment, and compared with the conventional photoetching and electron beam etching methods and the like, the method has the advantages that: the method is higher in etching accuracy and easy to operate, subsequent processing is not needed, and a processing result can be directly observed on site; and the method is low in condition requirement and cost, simple in operation steps and high in operability, repeatability and processing accuracy.

Description

A kind of method at surface of crystalline silicon etching processing nano-pattern

Technical field

The invention belongs to the nano-pattern processing technique field, be specifically related to a kind of method at surface of crystalline silicon etching processing nano-pattern.

Background technology

Along with the rise of nanosecond science and technology and the development of nanometer technology, the nanometer manufacturing makes nanosecond science and technology move towards to use gradually, the various advantages of nano material displaying progressively.Silicon materials are to use maximum materials in the present semiconductor technology, are the foundation stones of modern semiconductors industry.The microminiaturization of semiconductor devices, high integrated and the high density storage is more and more higher to the requirement of its preparation and processing technology, people are also more and more higher to the microminiaturized requirement of the live width of integrated circuit and system architecture, and traditional process technology (as photoetching technique, laser technology etc.) can not satisfy the needs of its development.Therefore, the machine silicon material is an important direction of current semiconductor development under nanoscale.

Summary of the invention

The object of the present invention is to provide a kind of high precision, controlled, simple method at surface of crystalline silicon etching processing nano-pattern.

The present invention is by the following technical solutions:

A kind of method at surface of crystalline silicon etching processing nano-pattern is utilized the direct etching worked crystal of AFM silicon face.

The probe of described AFM is the probe that DLC film coats.

The shape of the probe that described DLC film coats is the triangular taper, the coefficient of elasticity 20-100N/m of probe, and the thickness 15nm of diamond thin, the height of needle point are 15-19 μ m, the radius of curvature of probe tip is less than 15nm.

The power that applies that the probe etching of described AFM adds man-hour is 10 μ N, etching speed 1 μ m/s.

Processing procedure before the processing of described crystalline silicon is: clean twice through the absolute ethyl alcohol ultrasonic wave, clean one time with the acetone ultrasonic wave, each scavenging period is 15-20 minute, uses the deionized water ultrasonic cleaning then 5-10 minute, after nitrogen dry up.

The present invention adopts the direct etching worked crystal of AFM silicon face, its process is not subjected to the influence of environment, than method etching precision height such as traditional photoetching, electron beam lithographies, easy to operate, need not subsequent treatment, the direct observation processing result on the throne of energy, and system and supporting simple relatively and cheap are a kind of very potential nanoprocessing instruments; The probe that uses in the etching process is the probe that DLC film coats, and probe shape is a triangular pyramid, and radius of curvature is less than 15nm, and is relatively more sharp-pointed, can be used for the high accuracy mechanical etching, has a sharp cutting limit, helps cutting crystalline silicon; The outer DLC film that coats of probe is a kind of noncrystalline membrane, has higher hardness and wearability, reduces the wearing and tearing in the needle point etching process, and surfacing and cost are low.The inventive method conditional request is low, and operating procedure is simple, and is workable, good reproducibility, and the machining accuracy height, cost is low.

Description of drawings

Fig. 1 is the scanning electron microscope diagram of the probe of DLC film coating;

Fig. 2 obtains the AFM figure of silicon linear array for embodiment 1 etching;

The AFM figure of the silicon square array that Fig. 3 obtains for embodiment 1 etching.

The specific embodiment

Embodiment 1

A kind of method at surface of crystalline silicon etching processing nano-pattern, carry out following preliminary treatment before the crystalline silicon processing earlier: clean twice through the absolute ethyl alcohol ultrasonic wave, clean one time with the acetone ultrasonic wave again, each scavenging period is 20 minutes, used the deionized water ultrasonic cleaning then 5 minutes, after nitrogen dry up; Utilize the direct etching worked crystal of the probe silicon face of the DLC film coating of AFM, the shape of the probe that DLC film coats is the triangular taper, shape as shown in Figure 1, the coefficient of elasticity 48N/m of probe, the thickness 15nm of diamond thin, the height of needle point are 17 μ m, and the radius of curvature of probe tip is less than 15nm, the power that applies that the probe etching of AFM adds man-hour is 10 μ N, etching speed 1 μ m/s.

The etching first being processed should be finished the etching program in advance, pretreated crystalline silicon is put on the objective table of AFM, and scanner impels crystalline silicon to contact with probe under the control of driving voltage; After treating probe and crystalline silicon contacting, at this moment backfeed loop is closed, be written into the etching program of finishing in advance then and adopt vector scan etching mode, AFM just can be by default power, etching speed, the circulation etching number of times that is applied on the probe, directly on crystalline silicon lateral etching cashier's linear meter array structure and horizontal and vertical both direction etch square structure.Probe is returned to initial state after to be etched the finishing, and at this moment is transformed into AFM scan image pattern, adopts the scan image pattern to observe etching effect.Because the size of the force parameter that applies of coding middle probe, probe translational speed parameter, probe etching loop parameter is directly connected to the effect of pattern after the etching.Select the suitable parameters lateral etching to go out linear array, vertically etch square array after elder generation is horizontal.Whole process is carried out at normal temperatures and pressures.

The shape of the probe of DLC film coating is the triangular taper as can see from Figure 1, and forward is a rib, is a face dorsad.

The etching condition of Fig. 2 linear array is: the power 10 μ N that probe applies, etching speed 1 μ m/s, circulation etching 4 times.Through profile analysis, the about 90nm of linear array live width that etching obtains, the about 2nm of the degree of depth.

The etching condition of Fig. 3 square array is: the power 10 μ N that probe applies, etching speed 1 μ m/s, circulation etching 6 times.The AFM figure of the silicon square array that etching obtains.It is about 100 * 110nm that etching obtains each square area ², the about 10nm of etching depth.

Embodiment 2

Be with the difference of embodiment 1: each scavenging period was 15 minutes when preliminary treatment was with absolute ethyl alcohol, acetone cleaning before the crystalline silicon processing, used the deionized water ultrasonic cleaning then 10 minutes, the coefficient of elasticity 20N/m of probe, the height of needle point is 15 μ m, the power 10 μ N that probe applies, etching speed 1 μ m/s, traverse cycle etching 4 times.

Embodiment 3

Be with the difference of embodiment 1: each scavenging period was 18 minutes when preliminary treatment was with absolute ethyl alcohol, acetone cleaning before the crystalline silicon processing, used the deionized water ultrasonic cleaning then 8 minutes, the coefficient of elasticity 100N/m of probe, the height of needle point is 19 μ m, the power 10 μ N that probe applies, etching speed 1 μ m/s, probe difference vertical and horizontal circulation etching 6 times.

Claims

1. the method at surface of crystalline silicon etching processing nano-pattern is characterized in that: utilize the direct etching worked crystal of AFM silicon face.

2. the method at surface of crystalline silicon etching processing nano-pattern as claimed in claim 1 is characterized in that: the probe of described AFM is the probe that DLC film coats.

3. the method at surface of crystalline silicon etching processing nano-pattern as claimed in claim 2, it is characterized in that: the shape of the probe that described DLC film coats is the triangular taper, the coefficient of elasticity 20-100N/m of probe, the thickness 15nm of diamond thin, the height of needle point is 15-19 μ m, and the radius of curvature of probe tip is less than 15nm.

4. the method at surface of crystalline silicon etching processing nano-pattern as claimed in claim 3, it is characterized in that: the power that applies that the probe etching of described AFM adds man-hour is 10 μ N, etching speed 1 μ m/s.

5. as each described method of claim 1 to 4 at surface of crystalline silicon etching processing nano-pattern, it is characterized in that: the processing procedure before the described crystalline silicon processing is: clean twice through the absolute ethyl alcohol ultrasonic wave, clean one time with the acetone ultrasonic wave again, each scavenging period is 15-20 minute, used the deionized water ultrasonic cleaning then 5-10 minute, after nitrogen dry up.