CN102183553A - Humidity sensor based on organic matter modified silicon nano-wire - Google Patents
Humidity sensor based on organic matter modified silicon nano-wire Download PDFInfo
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- CN102183553A CN102183553A CN 201110044398 CN201110044398A CN102183553A CN 102183553 A CN102183553 A CN 102183553A CN 201110044398 CN201110044398 CN 201110044398 CN 201110044398 A CN201110044398 A CN 201110044398A CN 102183553 A CN102183553 A CN 102183553A
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Abstract
The invention discloses a humidity sensor based on organic matter modified silicon nano-wires, and the sensor comprises a silicon substrate, organic matter modified silicon nano-wires, and interpolation electrodes. The silicon substrate is used for growing and loading silicon nano-wires; the silicon nano-wires are modified by organic matter; and the interpolation electrodes are prepared at the tops of the organic matter modified silicon nano-wires; the silicon nano-wires are prepared by chemical etching; the surfaces of the silicon nano-wires are than modified by organic matter; the interpolation electrodes are prepared at the tops with conductive silver paste through a screen printing method; and conductors are drawn out. the sensor of the invention is simple in preparation, has good recoverability, less humidity hysteresis, fast response, and stable performance, and is easy to realize micromation.
Description
Technical field
The present invention relates to sensor technical field, specifically a kind of silicon nanowires humidity sensor of modifying based on organism.
Background technology
Nowadays, moisture measurement more and more is subject to people's attention, and humidity and scientific research, production, human lives, plant growth all have confidential relation.From the birth of first humidity-sensitive element till now, existing more than 200 year, various humidity-sensitive elements miscellaneous and sensor have appearred during this, and it mainly is divided into resistance-type and condenser type two big classes.In order to obtain more excellent performance, the humidity sensitive material of all kinds of novelties emerges in an endless stream, and includes organic polymer, inorganic material, nano-complex, microchannel, porous silicon or the like.Though these new materials have certain utilization potential, but some technical disadvantages have limited their development, comprise that the response time is long, humidity hysteresis big, incompatible with traditional integrated circuit technology, only be suitable for that among a small circle moisture measurement, needs extra heating element, cost are big, production process is complicated or the like.Therefore, seeking a kind of desirable humidity sensitive material is the task of top priority.
Summary of the invention
The purpose of this invention is to provide a kind of silicon nanowires humidity sensor of modifying based on organism, solving and to improve the some shortcomings of prior art, for the making of following humidity sensor provides a kind of feasible program that is new, that be applicable to large-scale production, with low cost and performance optimization.
The concrete technical scheme that realizes the object of the invention is:
A kind of silicon nanowires humidity sensor of modifying based on organism, silicon nanowires and slotting finger electrode that this sensor is modified by silicon substrate, organism constitute, silicon substrate is used for growth and carrying silicon nanowires, modify organism on the silicon nanowires, the silicon nanowires top that organism is modified makes to insert and refers to electrode.
A kind of preparation method of described sensor comprises following concrete steps:
1) preparation of silicon nanowires
Silicon nanowires makes silicon nanowires by chemical etching method;
2) organism is modified
The silicon nanowires that makes is placed 100-200 ℃ hydrophobic nature organism saturated gas atmosphere, reacted 20 minutes.The organism self assembly finishes, and surface of silicon nanowires is hydrophobic in nature;
3) making of electrode
At the surface of silicon nanowires that organism is modified, to make one with conductive silver paste with the method for serigraphy and insert the finger electrode, electrode width and electrode separation are the 1-2 millimeter; Draw lead at last, obtain described sensor.
Described hydrophobic nature organism is HMDS (HMDS) or 3-aminopropyl trimethoxy siloxane (APTMS).
Higher by the humidity sensor sensitivity that silicon nanowires is made, but humidity hysteresis is very big, the response time under the high humidity environment is longer, and this mainly is because have a lot of hydroxyls on the surface of silicon nanowires, makes its surface be water wettability and causes.The method that the present invention has taked organism to modify at surface of silicon nanowires self assembly one deck organism, makes its surface hydrophobic in nature, thereby improves the performance of sensor.Advantages such as that this method has is simple, reliable, inexpensive, good reproducibility, humidity hysteresis is little and reaction velocity is fast are for the making of following micro-nano humidity transducer and the selection of humidity-sensitive material provide a kind of new thinking and method.
The present invention has following purposes and advantage:
⑴, purposes
The humidity sensor that this method is made can be studied widely and be used in the Humidity Detection agriculture, industrial, that the human lives is required.
⑵, advantage
First can produce in enormous quantities by simple micro fabrication, and cost is low and compatible mutually with lsi technology.
The second, the humidity sensor of this method preparation has utilized organic self assembly performance dexterously, is easy to realize having extensive applicability.
The 3rd, prepared sensor recovery is good, humidity hysteresis is little, response is fast, stable performance, be easy to realize microminiaturized.
Description of drawings
Fig. 1 is the structural representation of sensor of the present invention;
Fig. 2 is the pictorial diagram of sensor of the present invention;
Fig. 3 is the proving installation synoptic diagram of sensor of the present invention;
Fig. 4 is the recovery curve of sensor of the present invention under relative humidity 11.3%-57%-11.3%RH and 11.3%-93%-11.3%RH condition;
Fig. 5 is the humidity hysteresis performance diagram of sensor of the present invention;
Fig. 6 is the stability curve figure of sensor of the present invention.
Embodiment
Further set forth technical characterstic of the present invention below in conjunction with the drawings and specific embodiments.
Embodiment
Consult Fig. 1, silicon nanowires 2 and slotting finger electrode 3 that sensor of the present invention is modified by silicon substrate 1, organism constitute, and silicon substrate 1 is used for growth and carrying silicon nanowires, modifies organism on the silicon nanowires, and the silicon nanowires 2 surperficial making that organism is modified are inserted and referred to electrode 3.
The preparation of sensor of the present invention specifically may further comprise the steps:
1) preparation of silicon nanowires
Silicon nanowires is made by chemical etching method.At first choose the silicon chip that size is 0.5 * 0.5cm, use H
2SO
4: H
2O
2=1:1(volume ratio) the solution scavenging period is 10 minutes, with deionized water it is rinsed well again; Prepare 70 mMs/liter AgNO
320 milliliters of solution, ultrasonic vibration 20 minutes, compound concentration is 20 milliliters of 20% HF solution again; With clean silicon chip put into above-mentioned AgNO
3With react in the mixed solution of HF, the reaction time is 60 minutes; Use HNO at last respectively
3Solution and deionized water clean up the silicon chip that this is carved with silicon nanowires, and rapid thermal annealing is 4 minutes in 400 degrees centigrade air.
2) organism is modified
The silicon nanowires that makes is placed 100-200 ℃ organism saturated gas atmosphere, and organism is selected HMDS for use, reacts 20 minutes; The organism self assembly finishes, and surface of silicon nanowires is hydrophobic in nature.
3) making of electrode
At the surface of silicon nanowires that organism is modified, to make one with conductive silver paste with the method for serigraphy and insert the finger electrode, electrode width and electrode separation are about the 1-2 millimeter.Draw lead at last, make the silicon nanowires humidity sensor of modifying based on organism.
Consult Fig. 2, sensor pictorial diagram of the present invention.
Consult Fig. 3, prepared sensor is carried out relative humidity test verification in addition.Needed standard humidity obtains by the salt saturated solution method in the experiment.Depress at a normal atmosphere, when indoor temperature is 25 ℃, get LiCl, CH
3COOK, K
2CO
3, NaBr, KI, NaCl, KCl, KNO
3Deng 8 kinds of saturated salt solutions, their rh value is respectively 11.3%, 23%, and 43%, 57%, 68%, 75%, 85%, 93%, the sensor two ends are connected in the oscillatory circuit that 555 chips are linked to be as capacitor element, observe the variation of its output valve by computer program.1 is the humidity measurement environment among the figure, and 2 are sensor of the present invention.
⑴, recovery
With humidity environment 11.3%RH is benchmark, is 23%, 43%, 57%, 68% to rh value respectively, and 75%, 85%, 93% has carried out the recovery test.Concrete testing procedure is: humidity sensor was placed 10 minutes in the 11.3%RH environment, put rapidly then to the tested relative humidity environment 10 minutes, play back in the 11.3%RH environment 10 minutes subsequently, again sensor was put back in the previous tested relative humidity environment 10 minutes, again it was put back at last in the 11.3%RH environment 10 minutes.With this, by 555 multivibrators and computer data collection, can obtain the frequency change data of twice repeated test, by calculating, be converted into the variation of capacitance.With 11.3%-57%-11.3%-57%-11.3% RH and 11.3%-93%-11.3 %-93%-11.3% RH is example (as shown in Figure 4), can see, the recovery of this sensor is good, no matter be that the frequency values of sensor all can be returned to initial position substantially under high humidity or the low wet environment.
⑵, humidity hysteresis characteristic
In the practical application of humidity sensor, humidity hysteresis has become a problem that hinders its development greatly.Sensor of the present invention is carried out the humidity hysteresis test, and method of testing is for progressively testing from 11.3%RH to 93%RH earlier, and promptly humidity increases progressively direction; And then from 93%RH to 11.3%RH, progressively test the i.e. humidity direction of successively decreasing.By (1 silicon nanowires humidity sensor among the figure shown in Figure 5 for the HMDS modification, 2 is not modified silicon nanowires humidity sensor), as can be known, the humidity hysteresis characteristic of the silicon nanowires humidity sensor that process HMDS modifies has obtained tangible improvement, especially when relative humidity is 11.3%, its maximum humidity hysteresis rate is reduced to 1.1% by original 8.1%.
⑶, stability
As sensor, stability is crucial technical parameter, whether stablize be directly connected to it can be with reference to property.As shown in Figure 6, humidity sensor of the present invention has been carried out long stability test.Be specially under the environment of typical case than high humidity (relative humidity be 75% be example), follow-on test detects its stability over 30 days.Can see that by figure the output capacitance value of this sensor fluctuateed very little in 30 days, stable performance, its stability can reach within the acceptable scope of daily use.
⑷, response and release time
Sensor of the present invention under low moisture conditions, response and recover all very fast was generally about 20 to 30 seconds.And under the high humidity situation (relative humidity is greater than 85%RH), respond slack-offly, generally be about 2 minutes.But compare with the response time (being about 6 minutes) of the silicon nanowire sensor of not modifying with organism, be significantly improved.
Claims (3)
1. silicon nanowires humidity sensor of modifying based on organism, it is characterized in that silicon nanowires and slotting finger electrode that this sensor is modified by silicon substrate, organism constitute, silicon substrate is used for growth and carrying silicon nanowires, modify organism on the silicon nanowires, the silicon nanowires top that organism is modified makes to insert and refers to electrode.
2. the method for making of the described sensor of claim 1 is characterized in that this method comprises following concrete steps:
1) preparation of silicon nanowires
Silicon nanowires makes silicon nanowires by chemical etching method;
2) organism is modified
The silicon nanowires that makes is placed 100-200 ℃ hydrophobic nature organism saturated gas atmosphere, reacted 20 minutes; The organism self assembly finishes, and surface of silicon nanowires is hydrophobic in nature;
3) making of electrode
At the surface of silicon nanowires that organism is modified, to make one with conductive silver paste with the method for serigraphy and insert the finger electrode, electrode width and electrode separation are the 1-2 millimeter; Draw lead at last, obtain described sensor.
3. preparation method according to claim 2 is characterized in that described hydrophobic nature organism is HMDS or 3-aminopropyl trimethoxy siloxane.
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| CN 201110044398 CN102183553A (en) | 2011-02-24 | 2011-02-24 | Humidity sensor based on organic matter modified silicon nano-wire |
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| CN 201110044398 CN102183553A (en) | 2011-02-24 | 2011-02-24 | Humidity sensor based on organic matter modified silicon nano-wire |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110028038A (en) * | 2018-01-12 | 2019-07-19 | 天津大学 | A kind of silicon nanowires micro-structure regulation method towards different field application |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2101237U (en) * | 1991-08-16 | 1992-04-08 | 哈尔滨建筑工程学院 | Thermophilic high molecular humidity sensitive element |
| CN2243659Y (en) * | 1995-09-14 | 1996-12-25 | 电子工业部第四十九研究所 | Membrane capacitor moisture sensor |
| CN1445538A (en) * | 2002-03-20 | 2003-10-01 | 株式会社电装 | Capacitance humidity sensor with passivated layer |
| CN1782700A (en) * | 2004-11-09 | 2006-06-07 | 株式会社电装 | Capacitive humidity sensor |
-
2011
- 2011-02-24 CN CN 201110044398 patent/CN102183553A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2101237U (en) * | 1991-08-16 | 1992-04-08 | 哈尔滨建筑工程学院 | Thermophilic high molecular humidity sensitive element |
| CN2243659Y (en) * | 1995-09-14 | 1996-12-25 | 电子工业部第四十九研究所 | Membrane capacitor moisture sensor |
| CN1445538A (en) * | 2002-03-20 | 2003-10-01 | 株式会社电装 | Capacitance humidity sensor with passivated layer |
| CN1782700A (en) * | 2004-11-09 | 2006-06-07 | 株式会社电装 | Capacitive humidity sensor |
Non-Patent Citations (1)
| Title |
|---|
| 《Sensors and Actuators B: Chemical》 20110211 Xuejiao Chen et al 《Humidity sensing behavior of silicon nanowires with hexamethyldisilazane modification》 第1-5页 1-3 第156卷, 第2期 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110028038A (en) * | 2018-01-12 | 2019-07-19 | 天津大学 | A kind of silicon nanowires micro-structure regulation method towards different field application |
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Application publication date: 20110914 |