CN102185048A - Manufacturing method of high-light emitting rate light-emitting diode (LED) lamp strip - Google Patents
Manufacturing method of high-light emitting rate light-emitting diode (LED) lamp strip Download PDFInfo
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- CN102185048A CN102185048A CN2011100935369A CN201110093536A CN102185048A CN 102185048 A CN102185048 A CN 102185048A CN 2011100935369 A CN2011100935369 A CN 2011100935369A CN 201110093536 A CN201110093536 A CN 201110093536A CN 102185048 A CN102185048 A CN 102185048A
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Abstract
The invention discloses a manufacturing method of a high-light emitting rate light-emitting diode (LED) lamp strip. The manufacturing method comprises the following steps of: 1, fixing a plurality of blue light-emitting transparent wafers on a transparent base board, wherein each transparent wafer is a single wafer with one PN junction or a combined wafer formed by serially connecting a plurality of single wafers; 2, sequentially connecting the two electrodes on the transparent wafers in series, and connecting the two ends of the first transparent wafer and the last transparent wafer to an extraction electrode; and 3, coating powder glue outside the transparent base board and the transparent wafers to form the high-light emitting rate LED lamp strip, wherein the powder glue comprises fluorescent powder and transparent colloid, and the fluorescent powder is yellow fluorescent powder or mixed fluorescent powder of yellow fluorescent powder, red fluorescent powder and green fluorescent powder. The invention provides the manufacturing method of the high-light emitting rate LED lamp strip improving the light emitting rate.
Description
Technical field
The present invention relates to a kind of manufacture method of LED lamp bar.
Background technology
Existing LED bulb, led chip is installed on substrate bottom surface usually, the LED substrate adopts the good material of heat conductivility usually, described substrate is provided with electric power connection interface, described electric power connection interface is electrically connected with electric power connection line, and described substrate is provided with printed circuit, a plurality of led chips of arranged on the described substrate, described led chip comprises current-limiting resistance and pressurizer, and described current-limiting resistance all is connected with described printed circuit with pressurizer.
The LED lamp bar that the manufacture method of existing LED lamp bar obtains because the light that sends of led chip disperses downwards, its range of exposures be substrate with the lower part, promptly realize 2 high light-emitting rates, the part irradiate light has reduced the light emission rate of led light source to the bottom surface of substrate.
Summary of the invention
In order to overcome the lower deficiency of light emission rate of the manufacture method that has LED lamp bar, the invention provides a kind of manufacture method that promotes the high light-emitting rate LED lamp bar of light emission rate.
The technical solution adopted for the present invention to solve the technical problems is:
A kind of manufacture method of high light-emitting rate LED lamp bar, described manufacture method may further comprise the steps:
1), the transparent wafers of multi-disc blue light-emitting is fixed on the transparency carrier, described transparent wafers is single-chip or many resultant wafer that single-chip is together in series of a single PN junction;
2), two electrodes on the transparent wafers are together in series in order, two of initial and end transparent wafers terminates on the extraction electrode;
3), outside transparency carrier and transparent wafers, cover arogel, make the high light-emitting rate LED lamp bar; Wherein, described arogel comprises fluorescent material and transparent colloid, and described fluorescent material is yellow fluorescent powder or yellow, redness and green mixed fluorescent powder.
Further, in the described step 3), earlier fluorescent material and transparent colloid are mixed into arogel, more mixed arogel are coated onto outside transparency carrier and the transparent wafers.
In the described step 3), mould up and down is set, cavity between the mould is identical with high light-emitting rate LED lamp strip to be made up and down, transparency carrier and transparent wafers are put in the described cavity, the two ends of described mold have in order to charging hole that injects described arogel and steam vent, and described charging hole and steam vent all are communicated with described cavity.
Further again, in the described step 3), earlier fluorescent material and transparent colloid are mixed, adopt printing process to make the glue film arogel, outside transparency carrier and transparent wafers, the seam crossing of described glue film adopts transparent colloid bonding with described glue film wrapped.
Further, in the described step 3), earlier fluorescent material and transparent colloid are mixed, arogel is made sebific duct, the internal diameter of described sebific duct is bigger than high light-emitting rate LED lamp bar described to be made, glue pipe socket is contained in outside transparency carrier and the transparent wafers, makes sebific duct wrap tightly outside transparency carrier and transparent wafers through heat treatment.
In the described step 3), the quality percentage composition that each component of described arogel accounts for gross mass is: fluorescent material 10～50%, transparent colloid 50～90%.Certainly, also can adopt other quality percentage composition scope; According to the operating mode of lamp bar, the rare close degree that the luminous intensity of corresponding wafer, wavelength and wafer distribute and the light emission color temperature of lamp bar are just taken all factors into consideration the content of arogel.
In the described step 3), described transparent colloid is a transparent silica gel.Certainly, also can adopt other transparent colloids that have equivalent effect with transparent silica gel.
Beneficial effect of the present invention mainly shows: realized the high light-emitting rate of light-emitting section, promoted the light emission rate of LED lamp.
Embodiment
Below the present invention is further described.
A kind of manufacture method of high light-emitting rate LED lamp bar, described manufacture method may further comprise the steps:
1), the transparent wafers of multi-disc blue light-emitting is fixed on the transparency carrier, described transparent wafers is single-chip or many resultant wafer that single-chip is together in series of a single PN junction;
2), two electrodes on the transparent wafers are together in series in order, two of the brilliant slide of initial and end terminate on the extraction electrode;
3), outside transparency carrier and transparent wafers, cover arogel, make the high light-emitting rate LED lamp bar; Wherein, described arogel comprises fluorescent material and transparent colloid, and described fluorescent material is yellow fluorescent powder or yellow, redness and green mixed fluorescent powder.
In the described step 3), the quality percentage composition that each component of described arogel accounts for gross mass is: fluorescent material 10～50%, transparent colloid 50～90%.Certainly, also can adopt other quality percentage composition scope; According to the operating mode of lamp bar, the rare close degree that the luminous intensity of corresponding wafer, wavelength and wafer distribute and the light emission color temperature of lamp bar are just taken all factors into consideration the content of arogel.
In the described step 3), described transparent colloid is a transparent silica gel.Certainly, also can adopt other transparent colloids that have equivalent effect with transparent silica gel.
Example 1: in the described step 3), earlier fluorescent material and transparent colloid are mixed into arogel, more mixed arogel are coated onto outside transparency carrier and the transparent wafers.
In the described step 3), mould up and down is set, cavity between the mould is identical with high light-emitting rate LED lamp strip to be made up and down, transparency carrier and transparent wafers are put in the described cavity, the two ends of described mold have in order to charging hole that injects described arogel and steam vent, and described charging hole and steam vent all are communicated with described cavity.
By charging hole arogel is injected cavity, steam vent is discharged air in time, and the effect of this steam vent is when the injecting glue moulding, is difficult for producing bubble in the lamp bar of moulding, promotes crudy.
Example 2: in the described step 3), earlier fluorescent material and transparent colloid are mixed, adopt printing process to make the glue film arogel, described glue film wrapped is arrived outside transparency carrier and the transparent wafers, the seam crossing of described glue film adopts transparent colloid bonding, forms a complete high light-emitting rate LED lamp bar.
Example 3: in the described step 3), earlier fluorescent material and transparent colloid are mixed, arogel is made sebific duct, the internal diameter of described sebific duct is bigger than high light-emitting rate LED lamp bar described to be made, glue pipe socket is contained in outside transparency carrier and the transparent wafers, make sebific duct wrap tightly outside transparency carrier and transparent wafers through heat treatment, form a complete high light-emitting rate LED lamp bar.
Above example 1 is applicable to the lamp bar of different shape, for example linear, circle or oval, and perhaps other shapes are as long as the cavity of mould mates with the lamp strip up and down; Example 2 and example 3 are suitable for linear lamp bar.
The described content of the embodiment of this specification only is enumerating the way of realization of inventive concept; protection scope of the present invention should not be regarded as only limiting to the concrete form that embodiment states, protection scope of the present invention also reach in those skilled in the art conceive according to the present invention the equivalent technologies means that can expect.
Claims (7)
1. the manufacture method of a high light-emitting rate LED lamp bar, it is characterized in that: described manufacture method may further comprise the steps:
1), the transparent wafers of multi-disc blue light-emitting is fixed on the transparency carrier;
2), two electrodes on the transparent wafers are together in series in order, two of initial and end transparent wafers terminates on the extraction electrode;
3), outside transparency carrier and transparent wafers, cover arogel, make the high light-emitting rate LED lamp bar; Wherein, described arogel comprises fluorescent material and transparent colloid, and described fluorescent material is yellow fluorescent powder or yellow, redness and green mixed fluorescent powder.
2. the manufacture method of a kind of high light-emitting rate LED lamp bar as claimed in claim 1 is characterized in that: in the described step 3), earlier fluorescent material and transparent colloid are mixed into arogel, more mixed arogel are coated onto outside transparency carrier and the transparent wafers.
3. the manufacture method of a kind of high light-emitting rate LED lamp bar as claimed in claim 2, it is characterized in that: in the described step 3), mould up and down is set, cavity between the mould is identical with high light-emitting rate LED lamp strip to be made up and down, transparency carrier and transparent wafers are put in the described cavity, the two ends of described mold have in order to charging hole that injects described arogel and steam vent, and described charging hole and steam vent all are communicated with described cavity.
4. the manufacture method of a kind of high light-emitting rate LED lamp bar as claimed in claim 1, it is characterized in that: in the described step 3), earlier fluorescent material and transparent colloid are mixed, adopt printing process to make the glue film arogel, outside transparency carrier and transparent wafers, the seam crossing of described glue film adopts transparent colloid bonding with described glue film wrapped.
5. the manufacture method of a kind of high light-emitting rate LED lamp bar as claimed in claim 1, it is characterized in that: in the described step 3), earlier fluorescent material and transparent colloid are mixed, arogel is made sebific duct, the internal diameter of described sebific duct is bigger than high light-emitting rate LED lamp bar described to be made, glue pipe socket is contained in outside transparency carrier and the transparent wafers, makes sebific duct wrap tightly outside transparency carrier and transparent wafers through heat treatment.
6. as the manufacture method of the described a kind of high light-emitting rate LED lamp bar of one of claim 1～5, it is characterized in that: in the described step 3), the quality percentage composition that each component of described arogel accounts for gross mass is: fluorescent material 10～50%, transparent colloid 50～90%.
7. as the manufacture method of the described a kind of high light-emitting rate LED lamp bar of one of claim 1～5, it is characterized in that: in the described step 3), described transparent colloid is a transparent silica gel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100935369A CN102185048A (en) | 2011-04-14 | 2011-04-14 | Manufacturing method of high-light emitting rate light-emitting diode (LED) lamp strip |
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| CN2011100935369A CN102185048A (en) | 2011-04-14 | 2011-04-14 | Manufacturing method of high-light emitting rate light-emitting diode (LED) lamp strip |
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| CN102185048A true CN102185048A (en) | 2011-09-14 |
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| CN2011100935369A Pending CN102185048A (en) | 2011-04-14 | 2011-04-14 | Manufacturing method of high-light emitting rate light-emitting diode (LED) lamp strip |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103872224A (en) * | 2014-03-04 | 2014-06-18 | 福建永德吉灯业股份有限公司 | Novel LED (Light Emitting Diode) illuminating element |
| CN103904071A (en) * | 2014-03-20 | 2014-07-02 | 苏州东山精密制造股份有限公司 | Manufacturing technology of transparent substrate LED lamp strip |
| CN104241501A (en) * | 2014-09-22 | 2014-12-24 | 四川柏狮光电技术有限公司 | All-direction plant growth lamp LED filament and manufacturing method thereof |
| CN104253121A (en) * | 2013-06-28 | 2014-12-31 | 横山明聪 | Omnidirectional light-emitting diode device and packaging method thereof |
| WO2015139369A1 (en) * | 2014-03-21 | 2015-09-24 | 苏州东山精密制造股份有限公司 | Led light bar manufacturing method and led light bar |
| CN106523949A (en) * | 2016-12-27 | 2017-03-22 | 浙江力胜电子科技有限公司 | LED wick and LED spiral lamp |
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| CN101577301A (en) * | 2008-09-05 | 2009-11-11 | 佛山市国星光电股份有限公司 | Package method for white light LED and LED device manufactured by package method for white light LED |
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| CN2745220Y (en) * | 2004-05-09 | 2005-12-07 | 王亚盛 | Large power multi-die integrated LED module |
| CN101540314A (en) * | 2008-03-19 | 2009-09-23 | 财团法人工业技术研究院 | Light emitting diode element and method of forming the same |
| CN101577301A (en) * | 2008-09-05 | 2009-11-11 | 佛山市国星光电股份有限公司 | Package method for white light LED and LED device manufactured by package method for white light LED |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104253121A (en) * | 2013-06-28 | 2014-12-31 | 横山明聪 | Omnidirectional light-emitting diode device and packaging method thereof |
| CN103872224A (en) * | 2014-03-04 | 2014-06-18 | 福建永德吉灯业股份有限公司 | Novel LED (Light Emitting Diode) illuminating element |
| CN103904071A (en) * | 2014-03-20 | 2014-07-02 | 苏州东山精密制造股份有限公司 | Manufacturing technology of transparent substrate LED lamp strip |
| CN103904071B (en) * | 2014-03-20 | 2016-08-17 | 苏州东山精密制造股份有限公司 | A kind of manufacturing process of transparency carrier LED lamp bar |
| WO2015139369A1 (en) * | 2014-03-21 | 2015-09-24 | 苏州东山精密制造股份有限公司 | Led light bar manufacturing method and led light bar |
| JP2017508302A (en) * | 2014-03-21 | 2017-03-23 | ▲蘇▼州▲東▼山精密制造股▲分▼有限公司Ｓｕｚｈｏｕ Ｄｏｎｇｓｈａｎ Ｐｒｅｃｉｓｉｏｎ Ｍａｎｕｆａｃｔｕｒｉｎｇ Ｃｏ．， Ｌｔｄ． | LED light bar manufacturing method and light bar |
| US9905542B2 (en) | 2014-03-21 | 2018-02-27 | Suzhou Dongshan Precision Manufacturing Co., Ltd. | LED light bar manufacturing method and LED light bar |
| CN104241501A (en) * | 2014-09-22 | 2014-12-24 | 四川柏狮光电技术有限公司 | All-direction plant growth lamp LED filament and manufacturing method thereof |
| CN106523949A (en) * | 2016-12-27 | 2017-03-22 | 浙江力胜电子科技有限公司 | LED wick and LED spiral lamp |
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Application publication date: 20110914 |