CN102173376B - Preparation method for small silicon-based nano hollow array with orderly heights - Google Patents
Preparation method for small silicon-based nano hollow array with orderly heights Download PDFInfo
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Abstract
The invention relates to a preparation method for a small silicon-based nano hollow array with orderly heights, belonging to the technical field of nano-structure preparation. The preparation method employs large-diameter polystyrene nano-spheres which are self-mounted into a single-layer nano-sphere film serving as masks on a Si substrate. After going through multiple technical procedures such as reaction ion lithography, direct current sputtering metal films, selective corrosion and the like, the mask is converted into a small inverted-pyramidal nano-hollow array, which is a two-dimensionalhexagonal dot array. The cycle of the nano-hollow arrays is determined by the diameters initially selected for the polystyrene nano-spheres. The invention is likely to be used in fields of growth of controllable quantum structures, photonic crystal manufacturing, quantum logic operation, magnetic storage media, etc.
Description
Technical field
The invention belongs to the Fabrication Techniques of Nano-Structure field, be specifically related to the preparation method of a kind of small size silicon-based nano hole array.
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Background technology
In recent years, along with development and the maturation of various semiconductor integrated techniques, the preparation of semiconductor low-dimension nano material has also obtained tremendous development with sign, and has progressively entered practical.Semiconductor low-dimensional quantum structure (such as quantum dot, quantum wire, Quantum Rings etc.) is owing to having the quantum limitation effect that low spatial dimension and very small dimensions cause, present the physical characteristic of a lot of novelties, become one of the study hotspot in current low-dimensional nano structure field.Yet utilize the quantum structure of self-assembling technique growth, its spatial distribution, pattern and size etc. generally all is difficult to accurate control, has limited its application in devices field.In order to realize the low-dimensional quantum structure Controllable growth, the researcher has proposed the multiple method that realizes the quantum structure controllable growth at the substrate with orderly distribution nanometer hole or nano-pore.The method of the orderly nanometer hole of common preparation (or nano-pore) structure has electron beam lithography (EBL), focused ion beam technology etching (FIB) and X-ray holographic lithography etc.These methods are at first accurately to etch the nano-scale mask on the substrate of photoresist scribbling, and then utilize lithographic technique, etch the structures such as nanometer hole or nano-pore.This class ordered nano-structure preparation method's advantage is that accuracy is high, and the size of its spatial distribution and quantum structure etc. all is easy to accurate control.But its apparatus expensive, technology is complicated, and production cost is high, also easily introduces defective after the etching.
Utilize the nanosphere self-assembling technique to prepare the nano material preparation technology that orderly graphic array is a kind of low-cost high production.Early stage work mainly is exploration prepares orderly nano-structure array in semiconductor or metal surface method.Along with the development of this technology, people utilize the ordered nano ball array to prepare magnetic ordered nano particle film, ordered nano line etc., and have found their new physical characteristic.These new materials with ordered nano-structure have obtained application in fields such as feds, infrared photon crystal, phase transition storage and solar cells, have shown their important using values.The relevant report that utilizes the polystyrene nanospheres self-assembling technique to prepare nanometer hole starts from 2009.But the nanometer hole size that reaches described in this report is larger, and uncontrollable.This is unfavorable for the research to its Quantum Properties.The method for preparing nanometer hole that this invention proposes can be regulated and control cycle and the size of nanometer hole simultaneously.Prepared nanometer hole is arranged high-sequential, and size only is tens nanometer.Can make to get the extremely small quantum structure of size with this nanometer hole.This explores new physical characteristic for their quantum effect of research, and it will be very favourable improving using value.
Summary of the invention
The purpose of this invention is to provide a kind of method of using the small size silicon-based nano hole array of the preparation high-sequential that equipment is simple, technological operation convenient, cost of manufacture is cheap.
The method of the small size silicon-based nano hole array of the preparation high-sequential that the present invention proposes, to utilize the self-assembling technique of major diameter polystyrene nanospheres on silicon substrate, through multiple etching, sputter, the techniques such as selective corrosion are prepared the nanometer hole array in monocrystalline substrate.The equipment that uses mainly contains culture dish, the syringe of 20 microlitre capacity, slide, and the concrete steps of preparation are:
1, will lie against through the silicon substrate that cleans the culture dish bottom, being positioned in the culture dish with certain angle of inclination through the slide that cleans, the downside of slide is facing to silicon substrate, as shown in Figure 2; In culture dish, inject deionized water.
2, utilize self-assembling technique, cover the individual layer polystyrene nanospheres in surface of silicon.Its method is as follows: be that (the polystyrene nanospheres latex suspension is for buying gained from commercial company, and the nanosphere density of particle is 1.05g/cm for the polystyrene nanospheres latex suspension of 400-800nm with methanol solution and diameter
3, particle concentration is 10% solids by weight in the latex suspension) evenly mix according to the ratio of volume ratio 1:1; Then drop on the slide with the polystyrene nanospheres methyl alcohol mixed solution of syringe with the 4-6 microlitre, allow this solution slowly flow in the water; After 4-6 minute, with syringe deionized water is slowly extracted out.At this moment, on silicon substrate, namely obtain the individual layer polystyrene nanospheres film (consulting Fig. 3) that two-dimentional hexagonal lattice is arranged.
3, surface coverage there is the sample of polystyrene nanospheres carry out the size that reactive ion etching processes to reduce nanosphere.The remaining size of polystyrene nanospheres after the etching is determined by the size of the nanometer hole of wish preparation.Its method is as follows: utilize reactive ion etching (RIE) technology, carry out etching in oxygen atmosphere.Oxygen during etching is pressed and is 9-10Pa, and oxygen gas flow rate is 20-40sccm, uses power to be 25-35W; After the etching, make the pipe/polyhenylethylene nano structure be class taper (consulting Fig. 4).Etch period is determined by the remaining size of desired polystyrene nanospheres.
4, deposit last layer gold film on the polystyrene nanospheres sample surfaces after the etching.Its method is as follows: use the d.c. sputtering technology, at sample surfaces sputter last layer gold film.The operating voltage of d.c. sputtering is 900V-1000V, and sputtering current is 35-45mA, and working gas is argon gas, and the ar pressure during sputter remains on 10
-3About Torr (such as 10
-3--200～10
-3+ 200Torr).Sputtering time is 1-2 minute.The golden film thickness that is deposited on sample surfaces after the sputter is 1-3nm.
5, the polystyrene nanospheres on the sample surfaces of removal previous step preparation.Its method is as follows: sample is put into organic solvent tetrahydrofuran (C
4H
8O) in the solution, and do ultrasonic processing.Ultrasonic time 15-25 minute, polystyrene film is dissolved in the organic solvent.Then, sample is placed the ultrasonic processing of ethanol 2--4 minute.Use at last deionized water rinsing, dry.The polystyrene nanospheres of sample surfaces and the golden film on these nanospheres all are removed after this processes.The golden film that is covered in sample surfaces is network structure.Polystyrene nanospheres after mesh size and the etching is measure-alike.
6, the sample of previous step preparation carried out selective etching.Its method is as follows: it is the KOH solution of 15-25% that sample is placed weight concentration.Utilize the net metal film of sample surfaces as mask, under 25-35 ℃ of temperature, ultrasonic processing 2-5 minute.Silicon in the etching off mesh.Because KOH solution is different in the corrosion rate of different crystal orientations for silicon, thereby obtain the nanometer hole of inverted pyramid shape.
7, remove the golden film of the sample surfaces of previous step preparation.Its method is as follows: it is KI:I that sample is placed on proportioning
2: H
2O=(8-12) g:(2-3) the interior ultrasonic processing of g:100ml corrosive liquid is 25-35 minute.Continued to soak after the ultrasonic processing 9-11 hour.Sample is used deionized water rinsing after taking out.Namely obtain having the small size nanometer hole array of arranging by two-dimentional hexagonal lattice.Nanometer hole is inverted pyramid shape structure.Nanometer hole is arranged high-sequential (consulting Fig. 5) on a large scale.
Among the present invention, the program of described cleaning silicon substrate is as follows: deionized water rinsing 1-3 minute, and the ultrasonic 3-7 of acetone minute, the ultrasonic 4-6 of methyl alcohol minute.Deionized water rinsing 4-6 minute.At H
2SO
4: H
2O
2After boiling 6-4 minute in the=2:1 solution, continue to soak 6-4 minute.Deionized water rinsing 2-4 minute.Then at HF:H
2Flood 40-80 second in the O=1:9 solution, to remove oxide layer.Use at last deionized water rinsing 50-80 after second, dry with the rejection tablet machine.
Among the present invention, the program of described cleaning slide is: deionized water rinsing 1-3 minute, and the ultrasonic 4-6 of acetone minute, the ultrasonic 4-6 of methyl alcohol minute, deionized water rinsing 4-6 minute.Then at H
2SO
4: H
2O
2After boiling 4-6 minute in the=2:1 solution, continue to soak 6-4 minute.After using at last deionized water rinsing 2-4 minute, oven dry.
Characteristics of the present invention are as follows:
1. made nanometer hole array sizes is little, and it arranges high-sequential in the large tracts of land scope, and the cycle of array can be controlled.
2. the technique easy operating control of preparation nanometer hole array, and with the process compatible of traditional silicon-based devices.
3. can make at the large tracts of land substrate, produce in batches.
4. equipment price and the cost of manufacture of development use are all very cheap.
The ordered nano hole array of the present invention's preparation is applicable to the growth of controlled amounts minor structure, can be widely used in the fields such as photonic crystal manufacturing, quantum logic computing and magnetic medium storage.
Description of drawings
Fig. 1. the technical process figure of preparation nanometer hole array.
Fig. 2. polystyrene nanospheres is carried out the experimental provision that self assembly is arranged at silicon substrate.
Fig. 3. be covered in the atomic force microscope images of the polystyrene nanospheres on the silicon substrate film.The upper right corner is the nanosphere image that amplifies.
The atomic force microscope images of polystyrene nanospheres after the RIE etching on Fig. 4 silicon substrate.The upper right corner is nanosphere enlarged image after etching.
Fig. 5. utilize the atomic force microscope images of the prepared nanometer hole array of this invention.Nanometer hole is the inverted pyramid shape, arranges by two-dimentional hexagonal lattice.The upper right corner is the nanometer hole image that amplifies.
Number in the figure:
Culture dish,
The syringe of capacity 20 μ L,
Slide,
Silicon substrate,
Deionized water.
The specific embodiment
1, substrate is Si (001) single-chip.Carry out following cleaning: deionized water rinsing 2 minutes, ultrasonic 5 minutes of acetone, ultrasonic 5 minutes of methyl alcohol.Deionized water rinsing 5 minutes.At H
2SO
4: H
2O
2After=2:1 solution boils 5 minutes, continue to soak 5 minutes.Using deionized water rinsing after 3 minutes, being placed on proportioning is HF:H
2Dipping is 60 seconds in the O=1:9 solution, to remove the oxide layer of silicon chip surface.Use at last deionized water rinsing after 60 seconds, dry with the rejection tablet machine.
2, be individual layer polystyrene nanospheres on silicon substrate covers, set up the device such as Fig. 2.The culture dish material is polystyrene.Be of a size of 100mm * 20mm.
3, slide used in the device shown in Figure 2 is made cleaning by following program: deionized water rinsing 2 minutes, ultrasonic 5 minutes of acetone, ultrasonic 5 minutes of methyl alcohol, deionized water rinsing 5 minutes.At H
2SO
4: H
2O
2After boiling 5 minutes in the=2:1 solution, continue to soak 5 minutes.Use at last deionized water rinsing after 3 minutes, oven dry.
4, with the silicon chip that cleans up and slide according to position of sound production shown in Figure 2 wherein.Then inject the 50ml deionized water.
5, deposit individual layer polystyrene nanospheres on silicon substrate.Process is as follows: be that (the polystyrene nanospheres latex suspension is from good (the Duke China Scientific of high molecular particle Science and Technology Ltd. of Du You for the polystyrene nanospheres latex suspension of 430nm with methanol solution and diameter, Inc.) buy, product type is 5043A) evenly mix according to the ratio of volume ratio 1:1.Then as shown in Figure 2, with the syringe of 20 microlitres, the polystyrene nanospheres methanol solution of 5 microlitres on slide drips, and allow this solution slowly flow in the water.After 5 minutes, with syringe water is slowly extracted out.At this moment, will be coated with the individual layer nanosphere film that two-dimentional hexagonal lattice is arranged on Si (001) substrate, the cycle of nanosphere dot matrix is that 430nm(consults Fig. 3).Polystyrene nanospheres diameter wherein can be selected arbitrarily in 400-800nm.
6, with the Si substrate that is coated with individual layer polystyrene nanospheres film of step 5 preparation, adopt the dry plasma etch technology to reduce the size of polystyrene nanospheres.Technique is as follows: sample is put into the vacuum chamber of reactive ion etching equipment (model SAMCO 10-NR), carried out etching in oxygen atmosphere.Oxygen during etching is pressed and is 10Pa, and oxygen gas flow rate is 30sccm.Etching power is 30W, and etch period is 10 minutes and 40 seconds.Obtain cone-shaped pipe/polyhenylethylene nano structure after etching is complete.(consulting Fig. 4).
7, utilize sputtering technology deposit last layer gold film at the sample surfaces by step 6 preparation.Technique is as follows: use the d.c. sputtering technology, at sample surfaces sputter last layer gold film.The d.c. sputtering platform model of using is Lecia EM SCD-005.The operating voltage of sputter is 1000V, and sputtering current is 40mA, and working gas is argon gas, and the Ar Pressure during sputter remains on 10
-3About Torr.Sputtering time is 1 minute.The golden film thickness of sample surfaces deposit is 2nm after the sputter.
8, the polystyrene nanospheres film on the sample of removing step 7 preparation.Process is as follows: with the tetrahydrofuran solution that places of the sample of Au film in the sputter, do ultrasonic processing 20 minutes.Then, place the ultrasonic processing of ethanol 3 minutes.Use at last deionized water rinsing after 3 minutes, dry.After this processed, the polystyrene nanospheres of sample surfaces and the golden film above the nanosphere all were completely removed, and have only stayed netted golden film on the surface.Polystyrene nanospheres after mesh size and the etching is measure-alike.
9. use mesh gold film as mask, the sample with step 8 preparation etches nanometer hole.Technique is as follows: it is that 20% the KOH aqueous solution carries out selective corrosion that sample is placed concentration.To place temperature be 30 ℃ water bath with thermostatic control to container during corrosion.Etching time is 4 minutes.Corrode complete after, take out sample., dry after 3 minutes with deionized water rinsing.Because KOH solution is different in the corrosion rate of different crystal orientations for silicon, thereby the silicon in the mesh of golden film is etched into the nanometer hole of reverse pyramid.
10, remove the golden film of the sample surfaces of step 9 preparation.Technique is as follows: it is KI:I that sample is placed proportioning
2: in the solution of H2O=10g:2.5g:100ml, ultrasonic processing 30 minutes.After ultrasonic being disposed, in original solution, continue to soak 10 hours.Take out sample,, dry after 3 minutes with deionized water rinsing.Namely obtain the nanometer hole array that two-dimentional hexagonal lattice is arranged at Si (001) substrate.Its arrangement cycle is 430nm.Nanometer hole is inverted pyramid shape structure.The length of side of nanometer hole bottom surface is between 75nm-85nm.The degree of depth is between 55nm-65nm.As shown in Figure 5.
Claims (3)
1. the small size silicon-based nano of high-sequential is cheated the preparation method of array, it is characterized in that concrete steps are:
(1) will lie against through the silicon substrate that cleans the culture dish bottom, being positioned in the culture dish with certain angle of inclination through the slide that cleans, the downside of slide is facing to silicon substrate; In culture dish, inject deionized water;
(2) utilize self-assembling technique, cover the individual layer polystyrene nanospheres in surface of silicon, its method is as follows: be that the polystyrene nanospheres latex suspension of 400-800nm evenly mixes according to the ratio of volume ratio 1:1 with methanol solution and diameter, wherein, the nanosphere density of particle is 1.05g/cm in the described polystyrene nanospheres latex suspension
3, the particulate weight concentration is 10% in the latex suspension; Then drop on the slide with the polystyrene nanospheres methyl alcohol mixed solution of syringe with the 4-6 microlitre, allow this solution slowly flow in the water; After 4-6 minute, with syringe deionized water is slowly extracted out; At this moment, on silicon substrate, namely obtain the individual layer polystyrene nanospheres film that two-dimentional hexagonal lattice is arranged;
(3) surface coverage there is the sample of polystyrene nanospheres carry out the size that reactive ion etching processes to reduce nanosphere, its method is as follows: utilize reactive ion etching technology, in oxygen atmosphere, carry out etching, oxygen during etching is pressed and is 9-10Pa, oxygen gas flow rate is 20-40sccm, uses power to be 25-35W; After the etching, make the pipe/polyhenylethylene nano structure be the class taper;
(4) deposit last layer gold film on the polystyrene nanospheres sample surfaces after the etching, its method is as follows: use the d.c. sputtering technology, at sample surfaces sputter last layer gold film; The operating voltage of d.c. sputtering is 900V-1000V, and sputtering current is 35-45mA, and working gas is argon gas, and the Ar Pressure during sputter remains on 10
-3--200～10
-3+ 200Torr, sputtering time are 1-2 minute; The golden film thickness that is deposited on sample surfaces after the sputter is 1-3nm;
(5) polystyrene nanospheres on the sample surfaces of removal previous step preparation, its method is as follows: sample is put into organic solvent tetrahydrofuran solution, and do ultrasonic processing, ultrasonic time 15-25 minute, polystyrene film is dissolved in the organic solvent, then, sample is placed the ultrasonic processing of ethanol 2--4 minute; Use at last deionized water rinsing, dry; The polystyrene nanospheres of sample surfaces and the golden film on these nanospheres all are removed after this processes, and the golden film that is covered in sample surfaces is network structure;
(6) sample of previous step preparation carried out selective etching, its method is as follows: it is the KOH solution of 15-25% that sample is placed weight concentration, utilize the netted golden film of sample surfaces as mask, under 25-35 ℃ of temperature, ultrasonic processing 2-5 minute, silicon in the etching off mesh obtains the nanometer hole of inverted pyramid shape;
(7) the golden film of the sample surfaces of removal previous step preparation, its method is as follows: it is KI:I that sample is placed on proportioning
2: H
2O=(8-12) g:(2-3) the interior ultrasonic processing of g:100ml corrosive liquid is 25-35 minute, continues to soak after the ultrasonic processing 9-11 hour, and sample is used deionized water rinsing after taking out, and namely obtains having the small size nanometer hole array of arranging by two-dimentional hexagonal lattice.
2. preparation method according to claim 1, the program that it is characterized in that cleaning silicon substrate is as follows: deionized water rinsing 1-3 minute, the ultrasonic 3-7 of acetone minute, the ultrasonic 4-6 of methyl alcohol minute; Deionized water rinsing 4-6 minute; At H
2SO
4: H
2O
2After boiling 6-4 minute in the=2:1 solution, continue to soak 6-4 minute; Deionized water rinsing 2-4 minute, then at HF:H
2Flood 40-80 second in the O=1:9 solution, to remove oxide layer; Use at last deionized water rinsing 50-80 after second, dry with the rejection tablet machine.
3. preparation method according to claim 1 is characterized in that the program of cleaning slide is: deionized water rinsing 1-3 minute, and the ultrasonic 4-6 of acetone minute, the ultrasonic 4-6 of methyl alcohol minute, deionized water rinsing 4-6 minute; Then at H
2SO
4: H
2O
2After boiling 4-6 minute in the=2:1 solution, continue to soak 6-4 minute; After using at last deionized water rinsing 2-4 minute, oven dry.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1887688A (en) * | 2006-07-14 | 2007-01-03 | 清华大学 | Prepn process of nanometer dot array in controllable size with inverse porous nanometer ball template |
| CN101024483A (en) * | 2007-03-27 | 2007-08-29 | 吉林大学 | Constituting method for metal ordered structure surface reinforced base |
| CN101143710A (en) * | 2007-10-17 | 2008-03-19 | 中国科学院光电技术研究所 | Method for manufacturing rhombic metal nano particle array structure |
| CN101308219A (en) * | 2008-06-27 | 2008-11-19 | 吉林大学 | Method for constructing anti-reflection microstructure using single layer nanometer particle as etching blocking layer |
| CN101560663A (en) * | 2009-06-03 | 2009-10-21 | 长春理工大学 | Method for electrochemically preparing nano-array structure materials on basis of nano-mask preparation technique |
-
2011
- 2011-02-25 CN CN 201110045698 patent/CN102173376B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1887688A (en) * | 2006-07-14 | 2007-01-03 | 清华大学 | Prepn process of nanometer dot array in controllable size with inverse porous nanometer ball template |
| CN101024483A (en) * | 2007-03-27 | 2007-08-29 | 吉林大学 | Constituting method for metal ordered structure surface reinforced base |
| CN101143710A (en) * | 2007-10-17 | 2008-03-19 | 中国科学院光电技术研究所 | Method for manufacturing rhombic metal nano particle array structure |
| CN101308219A (en) * | 2008-06-27 | 2008-11-19 | 吉林大学 | Method for constructing anti-reflection microstructure using single layer nanometer particle as etching blocking layer |
| CN101560663A (en) * | 2009-06-03 | 2009-10-21 | 长春理工大学 | Method for electrochemically preparing nano-array structure materials on basis of nano-mask preparation technique |
Non-Patent Citations (2)
| Title |
|---|
| 基于直接胶体晶体刻蚀技术的高度有序纳米硅阵列的尺寸及形貌控制;李卫等;《物理学报》;20070731;第56卷(第7期);4242-4246页 * |
| 李卫等.基于直接胶体晶体刻蚀技术的高度有序纳米硅阵列的尺寸及形貌控制.《物理学报》.2007,第56卷(第7期),4242-4246页. |
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