CN102175314A - Enhanced film bulk acoustic wave resonance ultraviolet detector - Google Patents
Enhanced film bulk acoustic wave resonance ultraviolet detector Download PDFInfo
- Publication number
- CN102175314A CN102175314A CN 201110035317 CN201110035317A CN102175314A CN 102175314 A CN102175314 A CN 102175314A CN 201110035317 CN201110035317 CN 201110035317 CN 201110035317 A CN201110035317 A CN 201110035317A CN 102175314 A CN102175314 A CN 102175314A
- Authority
- CN
- China
- Prior art keywords
- ultraviolet light
- ultraviolet
- bulk acoustic
- detector
- acoustic wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention discloses an enhanced film bulk acoustic wave resonance ultraviolet detector which comprises a piezoelectric film resonator, an ultraviolet reflecting film and a transparent conductive film, wherein a high-frequency bulk acoustic wave is used as the resonance mode of the detector; the ultraviolet reflecting film and the transparent conductive film are used for enhancing the absorption of the piezoelectric film to the ultraviolet light and increasing the sensitivity of the detector; and a doped zinc oxide material serves as a piezoelectric film layer, so the dosage concentration of magnesium can be adjusted according to the ultraviolet centre wavelength to be measured and the sensitive scope covers a wider spectrum region from low ultraviolet to deep ultraviolet. A bragg reflection layered structure is adopted, thus the mechanical firmness is high and the impact resistance is high. The detector can be applied to the civil and military fields of aerospace engineering, flame detection, biological effect, things of network, environmental monitoring, and the like.
Description
Technical field
The present invention relates to the ultraviolet light detector technical field, specifically, relate to the ultraviolet light detector of a kind of enhanced film bulk acoustic resonator.
Background technology
Ultraviolet light detector is a kind of very important optoelectronic device, is applied to civilian, military domain such as aerospace engineering, flame detecting, biological effect, communication and environmental monitoring.At present, the ultraviolet detector that has put it into commercial operation, mainly contain ultraviolet vacuum diode, ultravioplet photomultiplier, ultraviolet enhancer, ultraviolet pick-up tube and solid violet external detector etc., wherein Chang Yong photoconduction that is based on wide bandgap semiconductor materials and p-n junction device.Photoconduction and the ultraviolet light detector of p-n junction type all are to utilize the photo-generated carrier of semiconductor material to detect, and generally need the epitaxial semiconductor monocrystal thin films of high-crystal quality, and manufacturing cost is higher.
Resonant transducer is a kind of to detect its resonance frequency, phase place or the amplitude sensor that is changed to response with detection material, has been applied to multiple biochemistry detection field at present., existing literature finds that people such as the upright X.Qiu of university of State of Arizona, US have announced a kind of bulk acoustic wave ultraviolet light detector in 2009 for 191517 pages at Applied Physics Letters (applied physics wall bulletin) the 94th volume through being retrieved.This bulk acoustic wave ultraviolet light detector is a core devices with a kind of piezoelectric thin film vibrator, excites high frequency bulk acoustic wave resonance about 1.46 GHzs by extra electric field in zno piezoelectric thin film.When UV-irradiation, the partial oxygen composition in the zno piezoelectric thin film breaks away from, and density changes, and causes that resonance frequency raises.Can detect ultraviolet ray intensity by the amplitude of measuring the rising of detector resonance frequency.Detector based on this principle only needs the polycrystalline piezoelectric membrane, and cost is lower.In addition, the high-frequency signal response speed is fast, noise is low, resolution is high, and is more conducive to digitizing and wireless transmission, more is applicable to wireless sensor network.But still there are many defectives in above-mentioned bulk acoustic wave ultraviolet light detector, as adopting the lower gold of ultraviolet transmission rate as top electrode, has influenced the sensitivity of piezoelectric membrane to ultraviolet light; Adopt intrinsic zinc paste as piezoelectric film material, the response spectrum interval is narrower and can't adjust; Adopt unsettled diaphragm structure, mechanical fastness is relatively poor.
Summary of the invention
The present invention is directed to the deficiencies in the prior art and defective, proposed the ultraviolet light detector of a kind of enhanced film bulk acoustic resonator.This detector utilizes existing microelectric technique to make, and it is interval wide and can adjust to have highly sensitive a, response spectrum, and mechanical fastness is strong, and detection signal is easy to advantages such as digitized processing, and is easy to realize array and as the sensor terminal of Internet of Things.
The present invention is achieved by the following technical solutions:
The ultraviolet light detector of a kind of enhanced film bulk acoustic resonator, comprise piezoelectric thin film vibrator, ultraviolet light reflectance coating and nesa coating, it is characterized in that, have the ultraviolet light reflectance coating and, set gradually substrate, sound wave Bragg reflecting layer, metal bottom electrode, ultraviolet light reflectance coating, piezoelectric membrane, nesa coating from bottom to top as the nesa coating of top electrode.
Described piezoelectric membrane is magnesium-doped zinc oxide material, and its preferred thickness is the 1-1.5 micron, and the doping content of magnesium is 1% to 3%.
Described ultraviolet light reflectance coating is magnesium fluoride or aluminium nitride film, its thickness be required measurement ultraviolet light centre wavelength 1/2nd.
Described nesa coating is the zinc oxide material of adulterated al, its thickness be required measurement ultraviolet light centre wavelength 1/4th, the doping content of aluminium is 1% to 10%.
The present invention utilizes extra electric field to be activated at and produces bulk acoustic wave resonance in the piezoelectric thin film vibrator, when UV-irradiation, partial oxygen composition in the zno piezoelectric thin film that is adsorbed on doping is broken away from, thereby its density is changed, this will cause that the bulk acoustic wave resonance frequency raises.The desorption rate of oxygen composition depends on incident uv intensity, and therefore the amplitude that raises by the survey sensor resonance frequency just can detect the intensity of incident uv.
Compare with technology in the past, the invention has the beneficial effects as follows: (1) utilizes the ultraviolet light reflectance coating that unabsorbed ultraviolet light is reflected once more and enters piezoelectric membrane, and use the less nesa coating alternative metals of UV Absorption as top electrode, strengthened the absorption of piezoelectric membrane, thereby improved detector sensitivity ultraviolet light; (2) use the zinc oxide material of doping as the piezoelectric sensitivity layer, can adjust the doping content of magnesium according to the ultraviolet light centre wavelength of required measurement, its sensitive range covers the broad spectrum range of low ultraviolet to deep ultraviolet, and this all has extremely important using value in the civilian and military field; (3) adopt the sound wave Bragg reflecting layer to substitute the diaphragm structure, mechanical fastness height, anti-impact force is strong.
Description of drawings
Accompanying drawing 1 is a cross-sectional view of the present invention
Accompanying drawing 3 is the impedance frequency response before and after the embodiment of the invention 2 irradiating ultraviolet light.
Drawing explanation: 1, substrate; 2, sound wave Bragg reflecting layer; 3, metal bottom electrode; 4, ultraviolet light reflectance coating; 5, piezoelectric sensitivity layer; 6, nesa coating
Embodiment
The ultraviolet light detector of a kind of enhanced film bulk acoustic resonator, comprise piezoelectric thin film vibrator, ultraviolet light reflectance coating and nesa coating, it is characterized in that, have ultraviolet light reflectance coating 4 and, set gradually substrate 1, sound wave Bragg reflecting layer 2, metal bottom electrode 3, ultraviolet light reflectance coating 4, piezoelectric membrane 5, nesa coating 6 from bottom to top as the nesa coating 6 of top electrode.
Present embodiment is for being 0.35 micron ultraviolet light detector at surveying centre wavelength.
Sound wave Bragg reflecting layer 2 is the tungsten in three cycles and the crossover layer of monox.
Ultraviolet light reflectance coating 4 is a magnesium fluoride film, and thickness is 0.175 micron.
Nesa coating 6 is the zinc oxide material of adulterated al, and its thickness is 0.0875 micron, and the doping content of aluminium is 8%.
During work, apply the radio frequency alternate electrical signal between metal bottom electrode 3 and the nesa coating 6, excitation bulk acoustic wave resonance in piezoelectric membrane.As shown in Figure 2, during no UV-irradiation, the device resonance frequency is 2530 megahertzes.When energy is that 0.35 micron ultraviolet lighting of 0.1 to 0.3 milliwatt is mapped to device constantly, make to be adsorbed on oxygen generation desorption in the magnesium-doped zinc paste, cause its density to change, thereby cause that the bulk acoustic wave resonance frequency raises.By external frequency detection circuit, can detect change of resonance frequency, obtain the energy value of ultraviolet light.
Present embodiment is for being 0.3 micron ultraviolet light detector at surveying centre wavelength.
Sound wave Bragg reflecting layer 2 is the tungsten in three cycles and the crossover layer of monox.
Ultraviolet light reflectance coating 4 is an aluminium nitride film, and thickness is 0.15 micron.
Nesa coating 6 is the zinc oxide material of adulterated al, and its thickness is 0.075 micron, and the doping content of aluminium is 4%.
During work, apply the radio frequency alternate electrical signal between metal bottom electrode 3 and the nesa coating 6, excitation bulk acoustic wave resonance in piezoelectric membrane.As shown in Figure 3, during no UV-irradiation, the device resonance frequency is 2011 megahertzes.When energy is that 0.35 micron ultraviolet lighting of 0.1 to 0.3 milliwatt is mapped to device constantly, make to be adsorbed on oxygen generation desorption in the magnesium-doped zinc paste, cause its density to change, thereby cause that the bulk acoustic wave resonance frequency raises.By external frequency detection circuit, can detect change of resonance frequency, obtain the energy value of ultraviolet light.
Claims (4)
1. enhanced film bulk acoustic resonator ultraviolet light detector, comprise piezoelectric thin film vibrator, ultraviolet light reflectance coating and nesa coating, it is characterized in that, have ultraviolet light reflectance coating (4) and, set gradually substrate (1), sound wave Bragg reflecting layer (2), metal bottom electrode (3), ultraviolet light reflectance coating (4), piezoelectric membrane (5) and nesa coating (6) from bottom to top as the nesa coating (6) of top electrode.
2. enhanced film bulk acoustic resonator according to claim 1 ultraviolet light detector is characterized in that, described piezoelectric membrane (5) is magnesium-doped zinc oxide material, and its preferred thickness is the 1-1.5 micron, and the doping content of magnesium is 1% to 3%.
3. enhanced film bulk acoustic resonator according to claim 1 ultraviolet light detector is characterized in that, described ultraviolet light reflectance coating (4) is magnesium fluoride or aluminium nitride film, its thickness be required measurement ultraviolet light centre wavelength 1/2nd.
4. enhanced film bulk acoustic resonator according to claim 1 ultraviolet light detector, it is characterized in that, described nesa coating (6) is the zinc oxide material of adulterated al, its thickness be required measurement ultraviolet light centre wavelength 1/4th, the doping content of aluminium is 1% to 10%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110035317 CN102175314A (en) | 2011-02-10 | 2011-02-10 | Enhanced film bulk acoustic wave resonance ultraviolet detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110035317 CN102175314A (en) | 2011-02-10 | 2011-02-10 | Enhanced film bulk acoustic wave resonance ultraviolet detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102175314A true CN102175314A (en) | 2011-09-07 |
Family
ID=44518524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110035317 Pending CN102175314A (en) | 2011-02-10 | 2011-02-10 | Enhanced film bulk acoustic wave resonance ultraviolet detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102175314A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104030234A (en) * | 2014-06-04 | 2014-09-10 | 江苏艾伦摩尔微电子科技有限公司 | MEMS (Micro Electro Mechanical System) infrared sensor based on film bulk acoustic resonator and preparation method of MEMS infrared sensor |
| CN107007287A (en) * | 2017-05-23 | 2017-08-04 | 中国科学院电子学研究所 | Biomolecule detection devices and method |
| CN107850486A (en) * | 2015-07-17 | 2018-03-27 | 电子部品研究院 | Multiple optical sensor and its manufacture method |
| CN109052312A (en) * | 2018-07-20 | 2018-12-21 | 中国电子科技集团公司第四十四研究所 | Enhance the low-light grid optical cavity structure and its manufacturing method of the response of silicon detector near-infrared |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1638036A (en) * | 2004-01-09 | 2005-07-13 | Tdk株式会社 | Structural body for producing electronic device and method for producing electronic device using the same |
| CN101005105A (en) * | 2007-01-19 | 2007-07-25 | 南京大学 | Gallium nitride base resonant chamber reinforced ultravivlet photoelectric detector and preparing method |
| CN101634643A (en) * | 2008-07-24 | 2010-01-27 | 鸿富锦精密工业（深圳）有限公司 | Surface acoustic wave sensor |
| CN101958696A (en) * | 2010-09-27 | 2011-01-26 | 张�浩 | Temperature compensation film bulk wave resonator and processing method thereof |
| CN202008402U (en) * | 2011-02-10 | 2011-10-12 | 山东科技大学 | Enhanced film body acoustic wave resonance ultraviolet detector |
-
2011
- 2011-02-10 CN CN 201110035317 patent/CN102175314A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1638036A (en) * | 2004-01-09 | 2005-07-13 | Tdk株式会社 | Structural body for producing electronic device and method for producing electronic device using the same |
| CN101005105A (en) * | 2007-01-19 | 2007-07-25 | 南京大学 | Gallium nitride base resonant chamber reinforced ultravivlet photoelectric detector and preparing method |
| CN101634643A (en) * | 2008-07-24 | 2010-01-27 | 鸿富锦精密工业（深圳）有限公司 | Surface acoustic wave sensor |
| CN101958696A (en) * | 2010-09-27 | 2011-01-26 | 张�浩 | Temperature compensation film bulk wave resonator and processing method thereof |
| CN202008402U (en) * | 2011-02-10 | 2011-10-12 | 山东科技大学 | Enhanced film body acoustic wave resonance ultraviolet detector |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104030234A (en) * | 2014-06-04 | 2014-09-10 | 江苏艾伦摩尔微电子科技有限公司 | MEMS (Micro Electro Mechanical System) infrared sensor based on film bulk acoustic resonator and preparation method of MEMS infrared sensor |
| CN104030234B (en) * | 2014-06-04 | 2016-01-13 | 江苏艾伦摩尔微电子科技有限公司 | The MEMS infrared sensor preparation method of based thin film bulk acoustic wave resonator |
| CN107850486A (en) * | 2015-07-17 | 2018-03-27 | 电子部品研究院 | Multiple optical sensor and its manufacture method |
| CN107850486B (en) * | 2015-07-17 | 2020-06-16 | 电子部品研究院 | Multiple light sensor and method for manufacturing the same |
| CN107007287A (en) * | 2017-05-23 | 2017-08-04 | 中国科学院电子学研究所 | Biomolecule detection devices and method |
| CN109052312A (en) * | 2018-07-20 | 2018-12-21 | 中国电子科技集团公司第四十四研究所 | Enhance the low-light grid optical cavity structure and its manufacturing method of the response of silicon detector near-infrared |
| CN109052312B (en) * | 2018-07-20 | 2020-08-18 | 中国电子科技集团公司第四十四研究所 | Micro-grating optical cavity structure for enhancing near-infrared response of silicon detector and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20130234042A1 (en) | Fluorescence sensor | |
| CN102175314A (en) | Enhanced film bulk acoustic wave resonance ultraviolet detector | |
| CN102841138A (en) | Surface acoustic wave gas sensor based on two-dimensional phonon crystal reflecting grating | |
| CN110470965B (en) | Semiconductor surface state carrier life test method | |
| CN105576073A (en) | Graphene/beta-Ga<2>O<3>-based schottky junction deep ultraviolet photodetector and preparation method thereof | |
| CN105403528B (en) | The electricity that graphene phasmon enhances infrared spectrum detection detains background method in situ | |
| KR101529660B1 (en) | Photodetector using surface plasmon resonance and image senosr having thereof | |
| CN103364444A (en) | Method for gas detection by utilizing nanogenerator based on nano-piezoelectric semiconductor materials | |
| CN112331737B (en) | Ultraviolet-visible-near infrared silicon-based photoelectric detector and preparation method thereof | |
| CN103111410A (en) | Novel ultrasonic wave sensor | |
| CN202008402U (en) | Enhanced film body acoustic wave resonance ultraviolet detector | |
| CN102237432A (en) | Terahertz and infrared frequency band sensitive photon detector | |
| CN102135514B (en) | Gas sensor for cantilever beam type piezoelectric actuation and piezoelectric detection | |
| CN109580553A (en) | A kind of preparation method of the gas of based single crystal silicon nano thin-film photoelectric device and chemical substance sensor-based system | |
| CN201903532U (en) | Double-sensitive-layer bulk acoustic wave hydrogen resonance sensor | |
| CN102621025A (en) | Thin film bulk acoustic resonance biochemical sensor with annular electrodes | |
| CN102709346A (en) | Light detector of semiconductor quantum well | |
| CN203643602U (en) | High-sensitivity ultrasonic wave sensor | |
| CN102023184B (en) | Double-sensing-layer body sound-wave hydrogen resonant transducer | |
| CN102221568A (en) | Room temperature gas sensor with double-clamped beam | |
| JP5834600B2 (en) | Ultraviolet sensor element and ultraviolet sensor | |
| CN102280515A (en) | n-type doped ZnS quasi one-dimensional nano structure film photoconduction type ultraviolet detector and preparation method thereof | |
| CN206148450U (en) | A avalanche diode for photoelectric conversion module | |
| CN106908486B (en) | A kind of hygrosensor and preparation method thereof | |
| CN105352906A (en) | Spectral-line peak-value separation method employing graphene plasmons-enhanced infrared spectroscopy detection |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110907 |