CN102130423A - Luminous unit and device of semiconductor laser diode - Google Patents
Luminous unit and device of semiconductor laser diode Download PDFInfo
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- CN102130423A CN102130423A CN 201110033774 CN201110033774A CN102130423A CN 102130423 A CN102130423 A CN 102130423A CN 201110033774 CN201110033774 CN 201110033774 CN 201110033774 A CN201110033774 A CN 201110033774A CN 102130423 A CN102130423 A CN 102130423A
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Abstract
The invention discloses a luminous unit and a luminous device of a semiconductor laser diode. The power of the output laser of the luminous unit is more than 0.2W. The structure of the luminous unit comprises a first limiting layer, a first waveguide layer, a quantum well layer, a second waveguide layer and a second limiting layer from bottom to top, wherein the first limiting layer and the second limiting layer are used for forming a PN junction to perform current carrier input; the thicknesses of the first waveguide layer and the second waveguide layer are between 400 and 600 nanometers, and the first waveguide layer and the second waveguide layer are used for forming a laser transmission channel; and the quantum well layer serving as an active area generates laser. By increasing the thicknesses of the waveguide layers in the luminous unit, the catastrophic optical damage (COD) threshold value of the semiconductor laser diode can be effectively improved.
Description
Technical field
The present invention relates to microelectronics and optical technical field, relate in particular to a kind of large-power semiconductor laser diode luminescence unit and semiconductor laser diode device.
Background technology
In the prior art, 808nm high power semiconductor laser diode array (High Power Laser Diode Array is called for short HP LDA) is considered the influence of its photoelectric characteristic, and duct thickness is generally about tens nanometers.
In realizing process of the present invention, the inventor recognizes that there is following technological deficiency in prior art: thin ducting layer make 808-HP LDA the reliability under the abominable operational environment relatively a little less than.Reliability is mainly reflected in a little less than: light catastrophe damage (Catastrophic Optical Damage is called for short COD) threshold value is lower, and tolerable rated current fluctuation is little; And the working life of 808-HP LDA can significantly reduce owing to the generation of COD.
Summary of the invention
(1) technical problem that will solve
For addressing the aforementioned drawbacks, the invention provides a kind of semiconductor laser diode luminescence unit and device, to improve the COD threshold value of semiconductor laser diode device.
(2) technical scheme
According to an aspect of the present invention, provide a kind of semiconductor laser diode luminescence unit.The power of this luminescence unit output laser is greater than 0.2W, its structure comprises from bottom to top: first limiting layer, first ducting layer, quantum well layer, second ducting layer and second limiting layer, wherein: first limiting layer and second limiting layer are used to form PN junction and carry out the charge carrier input; The thickness of first ducting layer and second ducting layer all between 400～600nm, is used to form the path of laser transmission; Quantum well layer is used for producing laser as active area.
Preferably, in the luminescence unit of the present invention, first limiting layer, first ducting layer, quantum well layer, second ducting layer and second limiting layer are epitaxially grown successively thin layer on substrate.
Preferably, in the luminescence unit of the present invention, the material that constitutes first ducting layer and second ducting layer is an III-V family semiconducting compound.
Preferably, in the luminescence unit of the present invention, first limiting layer is a N type limiting layer, second limiting layer is a P type limiting layer, the thickness of N type limiting layer and P type limiting layer is all between 1～2 μ m, its material is an III-V family semiconducting compound, and the energy gap of the III-V family semiconducting compound of formation N type limiting layer and P type limiting layer is greater than the energy gap of the III-V family semiconducting compound that constitutes first ducting layer and second ducting layer.
Preferably, in the luminescence unit of the present invention, the material that constitutes first ducting layer and second ducting layer is a gallium aluminium arsenic, the material that constitutes N type limiting layer and P type limiting layer is a gallium aluminium arsenic, wherein, constitute in the gallium aluminium arsenic of first ducting layer and second ducting layer gallium aluminium mol ratio less than gallium aluminium mol ratio in the gallium aluminium arsenic that constitutes N type limiting layer and P type limiting layer.
Preferably, in the luminescence unit of the present invention, the thickness of quantum well layer is 5～50nm, and its material is an Al-Ga-In-As.
Preferably, in the luminescence unit of the present invention, constitute in the gallium aluminium arsenic of first ducting layer and second ducting layer Al: Ga=0.35: 0.65; Constitute in the gallium aluminium arsenic of N type limiting layer and P type limiting layer, the mol ratio of gallium aluminium is Al: Ga=0.55: 0.45.
Preferably, in the luminescence unit of the present invention, luminescence unit output Wavelength of Laser is 808nm, and the thickness of first ducting layer and second ducting layer is 540nm, and the thickness of N type limiting layer and P type limiting layer is 1.5 μ m, and the thickness of quantum well layer is 10nm.
According to another aspect of the present invention, provide a kind of semiconductor laser diode luminescent device.This device comprises semiconductor laser diode luminescence unit above.
Preferably, in the luminescent device of the present invention, the width of each luminescence unit is 80～140 μ m, and the packed density of luminescence unit is between 15%～25%.
(3) beneficial effect
The present invention can improve the COD threshold value of laser diode effectively by adopting the semiconductor laser diode structure of thick ducting layer, considers to be not cost with other photoelectric characteristics of sacrificing device simultaneously, the thickness of reasonable optimizing ducting layer.
Description of drawings
Fig. 1 is the structural representation of embodiment of the invention semiconductor laser diode luminescence unit;
Fig. 2 is the structural representation of embodiment of the invention semiconductor laser diode luminescent device;
Fig. 3 is the COD threshold value situation of the LDA device of different waveguide layer thickness.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
In one exemplary embodiment of the present invention, provide a kind of semiconductor laser diode luminescence unit.The power of this luminescence unit output laser is greater than 0.2W.Fig. 1 is the structural representation of embodiment of the invention semiconductor laser diode luminescence unit.As shown in Figure 1, the structure of luminescence unit comprises from bottom to top: first limiting layer, first ducting layer, quantum well layer, second ducting layer and second limiting layer, and wherein: first limiting layer and second limiting layer are used to form PN junction and carry out the charge carrier input; The thickness of first ducting layer and second ducting layer all between 400～600nm, is used to form the path of laser transmission; Quantum well layer is used for producing laser as active area.Preferably, first limiting layer, first ducting layer, quantum well layer, second ducting layer and second limiting layer are epitaxially grown successively thin layer on substrate.
In the present embodiment luminescence unit,, form thick ducting layer (ducting layer of more conventional waveguide bed thickness also becomes wide ducting layer in the industry), can improve the COD threshold value of semiconductor laser diode effectively by increasing the thickness of ducting layer in the luminescence unit.The output optical maser wavelength of this luminescence unit is between 650～900nm, and its power is greater than 0.2W, and preferably greater than 0.5W, optimum greater than 1W.
In the further embodiment of the present invention, the material that constitutes first ducting layer and second ducting layer is a gallium aluminium arsenic.First limiting layer is a N type limiting layer, and second limiting layer is a P type limiting layer, and all between 1～2 μ m, its material is a gallium aluminium arsenic to the thickness of N type limiting layer and P type limiting layer.And constitute in the gallium aluminium arsenic of first ducting layer and second ducting layer gallium aluminium mol ratio less than gallium aluminium mol ratio in the gallium aluminium arsenic that constitutes N type limiting layer and P type limiting layer.The thickness of quantum well layer is 5～50nm, and its material is an Al-Ga-In-As.The present invention is that example describes with gallium aluminium arsenic material, in fact, the material that constitutes ducting layer and limiting layer also can be other III-V family semiconducting compound, as long as it meets the following conditions: the energy gap of III-V family semiconducting compound that is construed as limiting layer is greater than the energy gap of the III-V family semiconducting compound of formation ducting layer.
In a specific embodiment of the present invention, luminescence unit output Wavelength of Laser is 808nm, and the thickness of first ducting layer and second ducting layer is 540nm, and the thickness of N type limiting layer and P type limiting layer is 1.5 μ m, and the thickness of quantum well layer is 10nm.Constitute in the gallium aluminium arsenic of first ducting layer and second ducting layer Al: Ga=0.35: 0.65; Constitute in the gallium aluminium arsenic of N type limiting layer and P type limiting layer, the mol ratio of gallium aluminium is Al: Ga=0.55: 0.45.The semiconductor laser diode luminescence unit of this structure shows good comprehensive optical characteristics, will be described below.
In sum, for device property and the reliability that improves 808-HP LDA, improve the COD threshold value of laser diode, the present invention has introduced a special ducting layer in the epitaxial structure of 808-HP LDA, this ducting layer is thicker than conventional ducting layer, is referred to as thick ducting layer.The epitaxial structure of laser diode as shown in Figure 1, W wherein
WG＞400nm.
According to another aspect of the present invention, also provide a kind of semiconductor laser diode luminescent device.This luminescent device comprises several semiconductor laser diode luminescence units mentioned above.Preferably, in this luminescent device, the width of luminescence unit is 80～140 μ m, and each semiconductor laser diode luminescence unit is with trench isolations, and the degree of depth of groove is to the lower waveguide layer of luminescence unit, and the packed density of luminescence unit is between 15%～25%.
Fig. 2 is the structural representation of embodiment of the invention semiconductor laser diode luminescent device.The preparation process of this luminescent device can comprise: the epitaxial structure as shown in Figure 1 that at first deposits two dimension; Then, this structure is carried out plasma etching, etch groove as shown in Figure 2, be used to isolate different luminescence units, wherein the degree of depth of groove is preferably to lower waveguide layer shown in Figure 1.To be example below, carry out experimental analysis with 20W808-HP LDA device.The sample device basic parameter of analyzing is: the width of luminescence unit is 100 μ m, the wide 1cm of array bar, 19 of luminescence units, packed density 20%, the long 1500 μ m in chamber, standard C S encapsulation.
Fig. 3 is the COD threshold value situation of the LDA device of different waveguide layer thickness.As can be seen from the figure, along with the increase of ducting layer thickness, the COD threshold value increases gradually; But duct thickness is less than 400nm, and the COD threshold value improves not obvious, and duct thickness is during greater than 540nm, and the COD threshold value begins saturated phenomenon to occur along with the increase of thickness.
Table 1 is the characterisitic parameter of the 20W 808-HP LDA device (CS encapsulation) of different-thickness waveguiding structure.When having compared ducting layer thickness in the table 1 greater than 400nm, other characterisitic parameters of laser.The display threshold electric current is along with the thickness of waveguide increases and increases in the table 1, and it is big that slope resistance also can become slightly because of thickening of waveguide; But the slope efficiency of thick ducting layer structure and electro-optical efficiency are compared with narrow waveguiding structure, all some tangible raisings, and other characterisitic parameters to change be not very greatly.The waveguiding structure of careful relatively 540nm and 590nm thickness, the operating efficiency of its device is approaching substantially, but but big than 540nm of the threshold current of 590nm.In general, thicker ducting layer also is a challenge to epitaxial growth.Therefore, comprehensively compare the characterisitic parameter of laser, the thick ducting layer structure that about 540nm is thick is one and comparatively reasonably selects:
Adopt the semiconductor laser diode luminescent device of the thick ducting layer of 540nm for the embodiment of the invention: 1) compare with narrow waveguide, effectively improved the COD threshold value of 20W 808-HP LDA device, the COD threshold value has improved about 75%; 2) keeping under the little situation of other characterisitic parameters variations, slope efficiency and electro-optical efficiency all increase; The epitaxial quality problem of having introduced when 3) this thickness has reduced the grow thick ducting layer as far as possible, thus have influence on the final response of device.
The 20W 808-HP LDA Devices Characteristics parameter of table 1 different-thickness waveguiding structure
* annotate: above characterisitic parameter is to measure under the situation of laser Output optical power at 20W.
The present invention is a kind of thick ducting layer luminescence unit that is applied to the high power semiconductor lasers diode.But the COD threshold value and the reliability of the high power semiconductor laser diode that improves 800nm～900nm wavelength of this new luminescence unit validity can effectively improve the electro-optical efficiency of device simultaneously.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a semiconductor laser diode luminescence unit is characterized in that, the power of this luminescence unit output laser is greater than 0.2W, and its structure comprises from bottom to top: first limiting layer, first ducting layer, quantum well layer, second ducting layer and second limiting layer, wherein:
Described first limiting layer and second limiting layer are used to form PN junction and carry out the charge carrier input;
The thickness of described first ducting layer and second ducting layer all between 400～600nm, is used to form the path of laser transmission;
Described quantum well layer is used for producing laser as active area.
2. luminescence unit according to claim 1 is characterized in that, described first limiting layer, first ducting layer, quantum well layer, second ducting layer and second limiting layer are epitaxially grown successively thin layer on substrate.
3. luminescence unit according to claim 2 is characterized in that, the material that constitutes described first ducting layer and second ducting layer is an III-V family semiconducting compound.
4. luminescence unit according to claim 3, it is characterized in that, described first limiting layer is a N type limiting layer, described second limiting layer is a P type limiting layer, the thickness of described N type limiting layer and described P type limiting layer is all between 1～2 μ m, its material is an III-V family semiconducting compound, and the energy gap of III-V family semiconducting compound that constitutes described N type limiting layer and described P type limiting layer is greater than the energy gap of the III-V family semiconducting compound that constitutes described first ducting layer and second ducting layer.
5. luminescence unit according to claim 4 is characterized in that, the material that constitutes described first ducting layer and second ducting layer is a gallium aluminium arsenic, and the material that constitutes described N type limiting layer and described P type limiting layer is a gallium aluminium arsenic, wherein,
Constitute in the gallium aluminium arsenic of described first ducting layer and second ducting layer gallium aluminium mol ratio less than gallium aluminium mol ratio in the gallium aluminium arsenic that constitutes described N type limiting layer and described P type limiting layer.
6. luminescence unit according to claim 5 is characterized in that, the thickness of described quantum well layer is 5～50nm, and its material is an Al-Ga-In-As.
7. luminescence unit according to claim 6 is characterized in that, constitutes in the gallium aluminium arsenic of described first ducting layer and second ducting layer Al: Ga=0.35: 0.65; Constitute in the gallium aluminium arsenic of described N type limiting layer and described P type limiting layer, the mol ratio of gallium aluminium is Al: Ga=0.55: 0.45.
8. luminescence unit according to claim 6, it is characterized in that, described luminescence unit output Wavelength of Laser is 808nm, the thickness of described first ducting layer and second ducting layer is 540nm, the thickness of described N type limiting layer and described P type limiting layer is 1.5 μ m, and the thickness of described quantum well layer is 10nm.
9. a semiconductor laser diode luminescent device is characterized in that, this device comprises each described semiconductor laser diode luminescence unit among several claims 1-8, and each semiconductor laser diode luminescence unit is with trench isolations.
10. luminescent device according to claim 9 is characterized in that, in this luminescent device, the width of each luminescence unit is 80～140 μ m, and the packed density of luminescence unit is between 15%～25%.
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| CN2011100337740A CN102130423B (en) | 2011-01-31 | 2011-01-31 | Luminous unit and device of semiconductor laser diode |
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| CN2011100337740A CN102130423B (en) | 2011-01-31 | 2011-01-31 | Luminous unit and device of semiconductor laser diode |
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| CN102130423B CN102130423B (en) | 2012-06-27 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6219365B1 (en) * | 1998-11-03 | 2001-04-17 | Wisconsin Alumni Research Foundation | High performance aluminum free active region semiconductor lasers |
| US6907056B2 (en) * | 2003-08-08 | 2005-06-14 | Wisconsin Alumni Research Foundation | Semiconductor light sources with doping gradients in optical confinement layers for improved device efficiency |
| CN101340060A (en) * | 2008-08-11 | 2009-01-07 | 山东华光光电子有限公司 | 808nm large-power quantum well laser in non-aluminum active region of asymmetric structure |
| CN101820136A (en) * | 2010-04-21 | 2010-09-01 | 中国科学院半导体研究所 | Asymmetrical 980nm semiconductor laser structure with high power and wide waveguide |
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2011
- 2011-01-31 CN CN2011100337740A patent/CN102130423B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6219365B1 (en) * | 1998-11-03 | 2001-04-17 | Wisconsin Alumni Research Foundation | High performance aluminum free active region semiconductor lasers |
| US6907056B2 (en) * | 2003-08-08 | 2005-06-14 | Wisconsin Alumni Research Foundation | Semiconductor light sources with doping gradients in optical confinement layers for improved device efficiency |
| CN101340060A (en) * | 2008-08-11 | 2009-01-07 | 山东华光光电子有限公司 | 808nm large-power quantum well laser in non-aluminum active region of asymmetric structure |
| CN101820136A (en) * | 2010-04-21 | 2010-09-01 | 中国科学院半导体研究所 | Asymmetrical 980nm semiconductor laser structure with high power and wide waveguide |
Non-Patent Citations (2)
| Title |
|---|
| 《Proc. of SPIE》 20041231 Mariusz Zbroszczyk et al Design optimization of InGaAlAs/GaAs single and double quantum well lasers emitting at 808 nm 446-453 1-10 第5349卷, 2 * |
| 《激光与光电子学进展》 20101231 刘媛媛 等 连续百瓦级高功率半导体阵列激光器热效应分析 091403 1-10 , 2 * |
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