CN102122612A - Method and system for manufacturing component by using shadow mask technological line - Google Patents
Method and system for manufacturing component by using shadow mask technological line Download PDFInfo
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- CN102122612A CN102122612A CN 201010591717 CN201010591717A CN102122612A CN 102122612 A CN102122612 A CN 102122612A CN 201010591717 CN201010591717 CN 201010591717 CN 201010591717 A CN201010591717 A CN 201010591717A CN 102122612 A CN102122612 A CN 102122612A
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- substrate
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- shadow mask
- planar mask
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a method and a system for manufacturing a component by using a shadow mask technological line. The method comprises the following steps: A. firstly depositing materials in a vacuum deposition box, and then accurately locating shadow mask plates in a first area of a substrate according to the operable relationship between the shadow mask plates and deposited material sources which are fully positioned in the vacuum deposition box; B. depositing the materials on the first area of the substrate through vacuum evaporation to form a graph; C. accurately locating the shadow mask plates and the deposited material sources in a second area of the substrate by a transmission device; and D. depositing the materials on the second area of the substrate through vacuum evaporation to form a graph and stereoscopic overlap of the materials; repeating step C and D according to design so as to complete composition and connection of the component; and sequentially annealing, testing, cutting and assembling respectively by a vacuum annealing box, a vacuum test box, a vacuum cutting box and a vacuum assembling box, and finally forming the complete component.
Description
Technical field
The present invention relates to a kind of manufacture method and system that adopts shadow mask techniques to make up production line, it is applicable to the making of printed circuit board (PCB), precise electronic loop and display panel with electronic component formed thereon.
Background technology
At present, the mainstream technology of microelectronics manufacturing both at home and abroad is an optical lithography, and mask aligner and baseplate material size have determined the full-size of the display screen and the base plate of output.Prior art can't be made above the base plate of its mask aligner upper dimension bound and display screen, and can't in time, promptly satisfy client's the custom size base plate and the demand of display screen, and this technology also exists scale of investment big, and floor space is big, to environmental requirement height, technical problem such as product is single and the production time is long.
At the problems referred to above, people have developed and have utilized vapor deposition shadow mask process to carry out the microelectronics manufacturing, and have developed such as Chinese invention patent bulletin CN101027424B disclosed " using small-area shadow mask to make the system and method for large-area backplane ".
Above-mentioned patent announcement really can realize using small-area shadow mask to make the effect of large-area backplane in actual applications, but it only shows when deposition required system and the method step by step when specifically depositing, promptly only rely on above-mentioned patent announcement, those skilled in the art only can produce semi-finished product, and can't obtain a complete microelectronic component, have the infull defective of product function thus, remain in fact to be improved.
In view of this, the inventor has this case to produce at the above-mentioned defective further investigation of existing microelectronic component manufacture method then.
Summary of the invention
First purpose of the present invention is to provide a kind of method that adopts the shadow mask techniques production line to make device, to solve the problem that the available technology adopting vapor deposition shadow mask process can't produce complete microelectronics vigour part.
In order to reach above-mentioned purpose, solution of the present invention is:
A kind of method that adopts the shadow mask techniques production line to make device wherein, comprises the steps:
But A, according to the planar mask and the sources of deposition operative relationship that are positioned at the deposition vacuum tank fully, planar mask is accurately positioned in the first area of substrate;
B, material is deposited on the first area of substrate, forms figure by vacuum evaporation;
C, planar mask and sources of deposition are accurately positioned in basic second area by transmission device;
D, material is deposited on the second area of substrate, forms figure, and form the stereo-overlap of storeroom by vacuum evaporation;
E, according to design, repeating step C and step D finish the formation and the connection of components and parts;
F, substrate is advanced to the annealing vacuum tank, carries out annealing in process;
G, substrate is advanced to the test vacuum tank, utilizes probe that the tester substrate point is tested;
H, substrate is advanced to the cutting vacuum tank, substrate is cut by design;
I, substrate is advanced to the assembling vacuum tank, the substrate of well cutting is assembled, and finish the manufacturing of whole components and parts.
Further, this deposition vacuum tank comprises a plurality of of continuous setting, and this transmission device promotes substrate and moves and the deposition region on planar mask and the substrate is accurately located along the deposition vacuum tank.
Further, this deposition vacuum tank is one, and this transmission device promotes planar mask and sources of deposition is moved in the deposition vacuum tank and the deposition region on planar mask and the substrate is accurately located.
Further, each planar mask also comprises the step that planar mask is thoroughly cleaned after evaporation is finished.
Second purpose of the present invention is to provide a kind of system that adopts the shadow mask techniques production line to make device, and its concrete structure is:
A kind of system that adopts the shadow mask techniques production line to make device, wherein, the annealing vacuum tank that comprises substrate, transmission device and being used for of being provided with in regular turn the deposition vacuum tank to deposition materials on the substrate, the substrate that is used to have deposited material carry out annealing in process, the cutting vacuum tank that cuts to the test vacuum tank tested through the substrate of annealing in process, to the substrate after testing and the assembling vacuum tank that substrate is assembled, this deposition vacuum tank has planar mask and the sources of deposition that is positioned at wherein, and this transmission device orders about substrate and planar mask is accurately located.
Further, this deposition vacuum tank be provided with continuously a plurality of, and this transmission device then promotes substrate and moves and the deposition region on planar mask and the substrate is accurately located along depositing vacuum tank.
Further, this deposition vacuum tank is one, and this transmission device promotes planar mask and sources of deposition is moved in the deposition vacuum tank and the deposition region on planar mask and the substrate is accurately located.
After adopting said structure, a kind of method that adopts the shadow mask techniques production line to make device that the present invention relates to, it can realize the shadow mask deposition of whole base plate after by steps A, B, C, D and E, and eliminates stress, stable dimensions, minimizing distortion and crackle tendency, crystal grain thinning, adjustment tissue and the elimination tissue defects that produces in the deposition event through the annealing vacuum tank; Then measure the performance of each product unit via the test vacuum tank, and product unit distinguished, and via the cutting vacuum tank cut by the designing requirement of whole base plate, after formed whole components and parts after the assembling, the present invention can realize the production of complete components and parts after by above-mentioned steps thus.
Description of drawings
Fig. 1 the present invention relates to a kind of process chart that adopts the shadow mask techniques production line to make the method for device;
Fig. 2 is the concrete production system schematic diagram of the present invention according to above-mentioned principle.
Among the figure:
Production system: 100 substrates: 10
Planar mask: 11 sources of deposition: 14
The deposition vacuum tank: 101,101A, 101B ... 101N-1,101N
Annealing vacuum tank: 102
Test vacuum tank: 103
Cutting vacuum tank: 104
Assembling vacuum tank: 105.
Embodiment
In order further to explain technical scheme of the present invention, the present invention will be described in detail below by specific embodiment.
As shown in Figure 1, the shadow mask techniques production line that adopts for the present invention is a kind of shown in it is made the method for device, wherein, comprises the steps:
But A, according to the planar mask and the sources of deposition operative relationship that are positioned at the deposition vacuum tank fully, planar mask is accurately positioned in the first area of substrate;
B, material is deposited on the first area of substrate, forms figure by vacuum evaporation;
C, planar mask and sources of deposition are accurately positioned in basic second area by transmission device; Concrete, the mode that it can select for use substrate to move, the mode that can also select for use planar mask to move realizes the location of second area; When selecting the substrate move mode for use, this deposition vacuum tank comprises a plurality of of continuous setting, and this transmission device then promotes substrate and moves and the deposition region on planar mask and the substrate is accurately located along the deposition vacuum tank; When selecting the planar mask move mode for use, this deposition vacuum tank only need be set to one, and this transmission device then promotes planar mask and sources of deposition is moved in the deposition vacuum tank and the deposition region on planar mask and the substrate is accurately located;
D, material is deposited on the second area of substrate, forms figure, and form the stereo-overlap of storeroom by vacuum evaporation; By overlapping and can realize the sewing effect of substrate;
E, according to design, repeating step C and step D finish the formation and the connection of components and parts; By this substrate is divided into a plurality of zones, thereby can realize that small-area shadow mask forms the effect of large-area backplane,, can consult the statement among the Chinese patent bulletin CN101027424B, just not elaborate at this as a kind of implementation wherein; Certainly the mode that realizes small-area shadow mask formation large-area backplane is not limited to above-mentioned patent announcement, such as: it can select the division methods of deposition region, be about to first area and second area etc. and all be divided into a plurality of fritters, and by in each deposition vacuum tank, one group of planar mask being set all, and every group of planar mask comprises a plurality of planar masks, and each planar mask corresponds respectively to a pocket in the zones of different in one group of planar mask, and moulding whole base plate thus is to realize superimposed and realize the deposition of whole base plate by depositing respectively of synsedimentary vacuum tank not; Wherein, preferred, each planar mask also comprises the step that planar mask is thoroughly cleaned after evaporation is finished;
F, substrate is advanced to the annealing vacuum tank, carries out annealing in process; Concrete, it eliminates the stress, stable dimensions, minimizing distortion and the crackle tendency that produce in the deposition event by to temperature controlling; And play crystal grain thinning, adjust tissue and eliminate the effect of tissue defects;
G, substrate is advanced to the test vacuum tank, utilizes probe that the tester substrate point is tested; Concrete, it is tested test point by probe, and the electrical characteristic of product is tested, thereby measures the performance of each product unit on the whole base plate and each product unit is distinguished;
H, substrate is advanced to the cutting vacuum tank, substrate is cut by design; It specifically is to require to cut according to current design;
I, substrate is advanced to the assembling vacuum tank, the substrate of well cutting is assembled, and finish the manufacturing of whole components and parts.
Like this, a kind of method that adopts the shadow mask techniques production line to make device that the present invention relates to, it can realize the shadow mask deposition of whole base plate after by steps A, B, C, D and E, and after annealing vacuum tank, test vacuum tank, cutting vacuum tank and assembling vacuum tank assembling, having formed whole components and parts, the present invention can realize the production of complete components and parts after by above-mentioned steps thus.
Need to prove that this substrate is meant the base foundation layer that forms element, this substrate can possess following character, such as transparent, nontransparent, flexible, inflexibility, coloured or non-conductive; If this substrate be conduction need between electronic component and substrate, insulating barrier to be set, this substrate can have any required size and shape.And, can be any electronic component by the components and parts that the present invention forms, such as P, the N knot and the electrode of diode; The grid of metal oxide semiconductor field effect tube, source electrode and drain electrode; The base stage of double pole triode, collector and emitter; The resistance body of resistance and electrode; The electrode of electric capacity and dielectric material; By realizing that by above-mentioned deposition the connection between substrate, the electronic component forms the loop.
As shown in Figure 2, be the concrete production system schematic diagram of the present invention when specifically using shown in it, wherein, this production system 100 comprises a plurality of deposition vacuum tank 101A of continuous setting, 101B, 101N-1 and 101N, substrate 10, transmission device (not shown) and annealing vacuum tank 102, test vacuum tank 103, cutting vacuum tank 104 and assembling vacuum tank 105, certainly it also comprises the alignment system (not shown) between planar mask 11 and the substrate 10, this a plurality of deposition vacuum tanks 101 herein, annealing vacuum tank 102, test vacuum tank 103, that adopts between cutting vacuum tank 104 and the assembling vacuum tank 105 is provided with for connecting, and show N deposition vacuum tank, and each deposition vacuum tank 101 all has and is positioned at one or more sources of deposition 14, this transmission device then driving substrate along deposition vacuum tank axial-movement, native system can carry out the deposition of multilayer to substrate according to current needs, thereby realizes the manufacturing of components and parts.Need to prove that shown in Figure 2 only be an embodiment of this case, it does not limit the present invention.
The foregoing description and graphic and non-limiting product form of the present invention and style, any person of an ordinary skill in the technical field all should be considered as not breaking away from patent category of the present invention to its suitable variation or modification of doing.
Claims (7)
1. a method that adopts the shadow mask techniques production line to make device is characterized in that, comprises the steps:
But A, according to the planar mask and the sources of deposition operative relationship that are positioned at the deposition vacuum tank fully, planar mask is accurately positioned in the first area of substrate;
B, material is deposited on the first area of substrate, forms figure by vacuum evaporation;
C, planar mask and sources of deposition are accurately positioned in basic second area by transmission device;
D, material is deposited on the second area of substrate, forms figure, and form the stereo-overlap of storeroom by vacuum evaporation;
E, according to design, repeating step C and step D finish the formation and the connection of components and parts;
F, substrate is advanced to the annealing vacuum tank, carries out annealing in process;
G, substrate is advanced to the test vacuum tank, utilizes probe that the tester substrate point is tested;
H, substrate is advanced to the cutting vacuum tank, substrate is cut by design;
I, substrate is advanced to the assembling vacuum tank, the substrate of well cutting is assembled, and finish the manufacturing of whole components and parts.
2. a kind of method that adopts the shadow mask techniques production line to make device as claimed in claim 1, it is characterized in that, this deposition vacuum tank comprises a plurality of of continuous setting, and this transmission device promotes substrate and moves and the deposition region on planar mask and the substrate is accurately located along the deposition vacuum tank.
3. a kind of method that adopts the shadow mask techniques production line to make device as claimed in claim 1, it is characterized in that, this deposition vacuum tank is one, and this transmission device promotes planar mask and sources of deposition is moved in the deposition vacuum tank and the deposition region on planar mask and the substrate is accurately located.
4. a kind of method that adopts the shadow mask techniques production line to make device as claimed in claim 1 is characterized in that each planar mask also comprises the step that planar mask is thoroughly cleaned after evaporation is finished.
5. system that adopts the shadow mask techniques production line to make device, it is characterized in that, comprise substrate, transmission device and the deposition vacuum tank that is used for deposition materials on substrate that is provided with in regular turn, the substrate that is used to have deposited material carries out the annealing vacuum tank of annealing in process, to the test vacuum tank of testing through the substrate of annealing in process, to the cutting vacuum tank that cuts of substrate after the test and the assembling vacuum tank that substrate is assembled, this deposition vacuum tank has planar mask and the sources of deposition that is positioned at wherein, and this transmission device orders about substrate and planar mask is accurately located.
6. a kind of system that adopts the shadow mask techniques production line to make device as claimed in claim 5, it is characterized in that, this deposition vacuum tank be provided with continuously a plurality of, and this transmission device then promotes substrate and moves and the deposition region on planar mask and the substrate is accurately located along depositing vacuum tank.
7. a kind of system that adopts the shadow mask techniques production line to make device as claimed in claim 5, it is characterized in that, this deposition vacuum tank is one, and this transmission device promotes planar mask and sources of deposition is moved in the deposition vacuum tank and the deposition region on planar mask and the substrate is accurately located.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010591717 CN102122612A (en) | 2010-12-16 | 2010-12-16 | Method and system for manufacturing component by using shadow mask technological line |
| PCT/CN2011/070399 WO2012079295A1 (en) | 2010-12-16 | 2011-01-19 | Method and system for manufacturing device using shadow mask technology production line |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010591717 CN102122612A (en) | 2010-12-16 | 2010-12-16 | Method and system for manufacturing component by using shadow mask technological line |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102122612A true CN102122612A (en) | 2011-07-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010591717 Pending CN102122612A (en) | 2010-12-16 | 2010-12-16 | Method and system for manufacturing component by using shadow mask technological line |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102122612A (en) |
| WO (1) | WO2012079295A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105097507A (en) * | 2014-05-15 | 2015-11-25 | 北大方正集团有限公司 | Polysilicon emitter transistor and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1666318A (en) * | 2002-06-05 | 2005-09-07 | 阿德文泰克全球有限公司 | Active matrix backplane for controlling controlled elements and method of manufacture thereof |
| CN101273444A (en) * | 2005-09-27 | 2008-09-24 | 阿德文泰克全球有限公司 | Method and apparatus for electronic device manufacture using shadow masks |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11200023A (en) * | 1998-01-13 | 1999-07-27 | Tdk Corp | Vacuum deposition device |
| US7132016B2 (en) * | 2002-09-26 | 2006-11-07 | Advantech Global, Ltd | System for and method of manufacturing a large-area backplane by use of a small-area shadow mask |
-
2010
- 2010-12-16 CN CN 201010591717 patent/CN102122612A/en active Pending
-
2011
- 2011-01-19 WO PCT/CN2011/070399 patent/WO2012079295A1/en active Application Filing
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1666318A (en) * | 2002-06-05 | 2005-09-07 | 阿德文泰克全球有限公司 | Active matrix backplane for controlling controlled elements and method of manufacture thereof |
| CN101273444A (en) * | 2005-09-27 | 2008-09-24 | 阿德文泰克全球有限公司 | Method and apparatus for electronic device manufacture using shadow masks |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105097507A (en) * | 2014-05-15 | 2015-11-25 | 北大方正集团有限公司 | Polysilicon emitter transistor and manufacturing method thereof |
| CN105097507B (en) * | 2014-05-15 | 2018-06-05 | 北大方正集团有限公司 | A kind of polysilicon emitter transistor and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012079295A1 (en) | 2012-06-21 |
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Application publication date: 20110713 |