CN102128973B - Voltage zero-crossing detecting circuit and DC-DC converter with same - Google Patents
Voltage zero-crossing detecting circuit and DC-DC converter with same Download PDFInfo
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- CN102128973B CN102128973B CN201010044464.4A CN201010044464A CN102128973B CN 102128973 B CN102128973 B CN 102128973B CN 201010044464 A CN201010044464 A CN 201010044464A CN 102128973 B CN102128973 B CN 102128973B
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Abstract
The invention discloses a voltage zero-crossing detecting circuit. The circuit comprises PMOS (P-channel Metal Oxide Semiconductor) transistors m1, m2 and m3, NMOS (N-channel Metal Oxide Semiconductor) transistors m5, m6, Ms0 and Ms1, a reference current source I0, a resistor R0 and a phase inverter. The voltage zero-crossing detecting circuit can also comprise a serial connection branch circuit which comprises a PMOS transistor m4 and an NMOS transistor m7. The invention also discloses a DC-DC converter with the voltage zero-crossing detecting circuit, which comprises a power transistor mp, a synchronous rectifying transistor mn, an inductor L, a capacitor Cout, a power supply voltage and a feedback control loop. The invention balances the time delay of logic units, such as the feedback control loop, and the like by a simple circuit, saves the cost, improves the reliability and is suitable for the application of a portable product.
Description
Technical field
The present invention relates to a kind of Analogous Integrated Electronic Circuits, relate to Analogous Integrated Electronic Circuits and application thereof that a kind of curtage zero passage to circuit lights detection effect especially.
Background technology
Synchronous rectification adopts the very low power MOSFET of on state resistance to replace commutation diode to reduce a technology of rectifier loss, greatly can improve the conversion efficiency of transducer.Synchronous rectified DC-DC converters is a kind of conventional power supply IC, has the advantage that output current is large, conversion efficiency is high, is one of first-selected electric power system of portable product.
Under non-continuous mode (DCM), when synchronous rectifier conducting, now inductive current linearly declines, when electric current drops to zero, if synchronous rectifier is conducting still, then electric current can pour in down a chimney to ground by synchronous rectifier by output capacitance, thus reduces the conversion efficiency of power supply largely.
The key problem of synchronous rectification is the driving problems of synchronous rectifier, namely when electric current drops to zero, drives synchronous rectifier to turn off, thus prevents output capacitance from pouring in down a chimney to ground by synchronous rectifier by electric current, reduce the conversion efficiency of power supply.Conventional current driven synchronous rectifier flows through the electric current of synchronous rectifier by detecting, determine whether to open or turn off synchronous rectifier, when synchronous rectifier conducting and electric current flows to drain electrode from the source electrode of synchronous rectifier time, the electric current of detection power MOSFET, obtains the drive singal of synchronous rectifier; When electric current be reduced to 0 or oppositely time, synchronous rectifier turns off.Therefore, the zero passage detection of synchronous rectifier is the determinative producing synchronous rectifier drive singal.The voltage/current zero cross detection circuit of existing synchronous rectifier has two kinds: one is resistance detection method, an i.e. series connection small resistor on synchronous rectifier branch road, current zero-crossing point is detected by detecting ohmically pressure drop, because resistance can cause loss in circuit, what therefore resistance needs did is very little, but detection signal will be caused like this to become very weak, make the anti-interference of control circuit poor, and in any case resistance all can introduce loss, especially, when low-voltage and high-current, this method becomes very impracticable.Simultaneously because this resistance must be external, make the integrated very difficult of this method.Another kind of current over-zero testing circuit method is current transformer detection method, in main circuit, namely introducing the method for power pack, convert current signal to voltage signal, then this voltage signal is carried out process complicated approach, obtaining the voltage signal for controlling.The shortcoming of the method be complicated, expensive, volume greatly, not easy of integration.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of voltage zero-crossing detection circuit and the application of this circuit in synchronous rectified DC-DC converters, this voltage zero-crossing detection circuit not only has reliable zero crossing detection function, and successfully solves the problem such as reliability, power consumption, integrated level in traditional current detection circuit.
For solving the problems of the technologies described above, the present invention proposes a kind of voltage zero-crossing detection circuit, this circuit comprises PMOS m
1, m
2, m
3, NMOS tube m
5, m
6, M
s0, M
s1, reference current source I
0, resistance R
0and a phase inverter, wherein, PMOS m
2with NMOS tube m
5, PMOS m
1with reference current source I
0be series at respectively between power voltage terminal and ground, PMOS m
3with NMOS tube m
6and resistance R
0branch road one termination supply voltage after series connection, another termination NMOS tube M
s0and M
s1drain electrode, NMOS tube M
s0source electrode meet an input voltage V of described voltage zero-crossing detection circuit
sw, grid meets an input control signal V
ckn; Input control signal V
cknnMOS tube M is met after described phase inverter
s1grid, NMOS tube M
s1source ground; PMOS m
1, m
2, m
3mirror image connects, NMOS tube m
5, m
6mirror image connects, by NMOS tube m
6drain electrode obtain the output control signal of described voltage zero-crossing detection circuit.Described NMOS tube M
s0and M
s1for switching tube.
Described resistance R
0resistance can be ahead of described voltage zero-crossing detection circuit input voltage V according to the output control signal of described voltage zero-crossing detection circuit
swreach the Timing of zero voltage value.
This testing circuit also comprises a PMOS m
4with a NMOS tube m
7the series arm of composition, is connected to NMOS tube m
6drain electrode and the output control signal of described voltage zero-crossing detection circuit between, wherein NMOS tube m
6drain electrode export NMOS tube m to
7grid, NMOS tube m
7drain electrode connect the output control signal of described voltage zero-crossing detection circuit; And this series arm one termination supply voltage, other end ground connection; PMOS m
4with PMOS m
3grid be connected.
The invention allows for a kind of voltage zero-crossing detection circuit, this testing circuit comprises PMOS m
1, m
2, m
3, m
8, m
9, m
10, m
12, NMOS tube m
5, m
6, M
s0, M
s1, two identical reference current sources, resistance R
0and a phase inverter, wherein, PMOS m
12with a reference current source, PMOS m
8with PMOS m
1and another reference current source, PMOS m
9with PMOS m
2and NMOS tube m
5be series at power supply V respectively
dDand between ground, and PMOS m
8grid meet PMOS m
1source electrode, PMOS m
12grid drain electrode be connected, NMOS tube m
5grid drain electrode be connected; PMOS m
10, m
3with NMOS tube m
6and resistance R
0branch road one termination supply voltage after series connection, another termination NMOS tube M
s0and M
s1drain electrode, NMOS tube M
s0source electrode meet an input voltage V of described voltage zero-crossing detection circuit
sw, grid meets an input control signal V
ckn; Control signal V
cknnMOS tube M is met after described phase inverter
s1grid, NMOS tube M
s1source ground; PMOS m
1, m
2, m
3, m
12grid all connected, PMOS m
8, m
9, m
10mirror image connects, NMOS tube m
5, m
6mirror image connects, by NMOS tube m
6drain electrode obtain the output control signal of described voltage zero-crossing detection circuit.Described NMOS tube M
s0, M
s1for switching tube.And described resistance R
0resistance can be ahead of described voltage zero-crossing detection circuit input voltage V according to the output control signal of described voltage zero-crossing detection circuit
swreach the Timing of zero voltage value.
Described testing circuit also comprises PMOS m
11, m
4with NMOS tube m
7the series arm of composition, is connected to NMOS tube m
6the described voltage zero-crossing detection circuit of drain electrode output control signal between, wherein NMOS tube m
6drain electrode export NMOS tube m to
7grid, NMOS tube m
7drain electrode connect the output control signal of described voltage zero-crossing detection circuit; And this series arm one termination supply voltage, other end ground connection; PMOS m
11with PMOS m
10mirror image connects, PMOS m
4grid and PMOS m
3grid be connected.
The invention allows for a kind of dc-dc with voltage zero-crossing detection circuit, comprise power tube mp, synchronous rectifier mn, inductance L, electric capacity C
out, supply voltage, feedback control loop, wherein, power tube mp and synchronous rectifier mn is series between supply voltage and ground, the drain voltage V of synchronous rectifier mn
swoutput voltage V after inductance L
outthrough electric capacity C
outto ground, and this output voltage V
outalso input to feedback control loop, this feedback control loop exports two control signal V
ckpand V
ckncontrol the grid of power tube mp and synchronous rectifier mn respectively, this dc-dc also comprises any one voltage zero-crossing detection circuit above-mentioned, and wherein, the drain voltage of synchronous rectifier mn is as the input voltage V of described voltage zero-crossing detection circuit
sw, the control signal V that described feedback control loop exports
cknas the input control signal of described voltage zero-crossing detection circuit, and the output control signal of this voltage zero-crossing detection circuit inputs to described feedback control loop.
Output control signal and the control signal V obtained after described feedback control loop of described voltage zero-crossing detection circuit
cknoppositely.
The beneficial effect that a kind of voltage zero-crossing detection circuit of the present invention is applied to dc-dc shows: for prevent the control signal that exports due to voltage zero-crossing detection circuit through feedback control loop time the time delay that causes on the impact of circuit, the present invention's time delay of the associated logical circuitry such as feedback control loop by simple circuit balancing, when voltage zero-cross, voltage zero-crossing detection circuit of the present invention can close synchronous rectifier in time, both provided cost savings, turn improve reliability, output capacitance is prevented to pour in down a chimney to ground by synchronous rectifier by electric current, thus improve the conversion efficiency of power supply largely, on the other hand, circuit structure of the present invention is simple, effectively can save area, be more suitable for portable product.
Accompanying drawing explanation
Fig. 1 is the structural representation of the synchronous rectified DC-DC converters with voltage zero-crossing detection circuit;
Fig. 2 be in the existing zero cross detection circuit of the present invention control signal time delay in the waveform schematic diagram of voltage over zero;
Fig. 3 is the circuit structure diagram of the voltage zero-crossing detection circuit described in the embodiment of the present invention one;
Fig. 4 be voltage zero-crossing detection circuit of the present invention export the control signal of control signal after feedback control loop consistent with input voltage zero crossing time waveform schematic diagram;
Fig. 5 is the circuit structure diagram of the voltage zero-crossing detection circuit described in the embodiment of the present invention two;
Fig. 6 is the structural drawing of the voltage zero-crossing detection circuit described in the embodiment of the present invention three;
Fig. 7 is the structural drawing of the voltage zero-crossing detection circuit described in the embodiment of the present invention four.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Be illustrated in figure 1 the structural representation of the synchronous rectified DC-DC converters of zero cross detection circuit with voltage, this structure comprises power tube mp, synchronous rectifier mn, inductance L, output capacitance C, feedback control loop and voltage zero-crossing detection circuit proposed by the invention, wherein, power tube mp and synchronous rectifier mn is series between supply voltage and ground, the drain voltage V of synchronous rectifier mn
swoutput voltage V after inductance L
outthrough electric capacity C
outto ground, and this output voltage V
outalso input to feedback control loop, this feedback control loop exports two control signal V
ckpand V
ckncontrol the grid of power tube mp and synchronous rectifier mn respectively.The drain voltage of synchronous rectifier mn is as the input voltage V of described voltage zero-crossing detection circuit
sw, the control signal V that described feedback control loop exports
cknas the input control signal of described voltage zero-crossing detection circuit, and the output control signal of this voltage zero-crossing detection circuit inputs to described feedback control loop.
When power tube mp conducting, synchronous rectifier mn end, supply voltage is to output capacitance C
outcharge, output voltage Vout rises; And when power tube mp cut-off, synchronous rectifier mn conducting, synchronous rectifier mn carries out afterflow to output, and freewheel current linearly reduces.Under non-continuous mode (DCM), when voltage zero-crossing detection circuit place in circuit, during synchronous rectifier mn conducting, now inductance L electric current linearly declines, when electric current drops to zero, if synchronous rectifier mn still conducting, then and output capacitance C
outby synchronous rectifier mn, electric current can be poured in down a chimney to ground, thus reduce the conversion efficiency of power supply largely.
Discharged over the ground by synchronous rectifier to prevent output capacitance, voltage zero-crossing detection circuit is added in DC-DC converter circuit structure described in this embodiment, the direction of current and the size that judge synchronous rectifier mn is carried out by the magnitude of voltage detecting sw place, when the electric current of synchronous rectifier mn drops to zero, then close this synchronous rectifier mn, otherwise continue conducting afterflow.When power tube mp ends, during synchronous rectifier mn conducting, now synchronous rectifier mn is to inductance L afterflow, and direction of current is from ground to sw, then now the voltage of sw is less than ground voltage, be negative voltage, when the current drops to zero, then now need to close synchronous rectifier mn, sw point is made to be high-impedance state, namely when electric current reduces to zero, voltage zero-crossing detection circuit exports a control signal, is used for closing synchronous rectifier mn.
Wherein voltage zero-crossing detection circuit can adopt conventional comparator unit, but because feedback control loop exists certain time delay, produce certain time delay when causing the drive singal exported by comparator unit to arrive synchronous rectifier mn, as shown in Figure 2, in the process of time delay, electric capacity C
outto pour in down a chimney to ground by synchronous rectifier mn, reduce the conversion efficiency of power supply.
This embodiment proposes four kinds of voltage zero-crossing detection circuit structures.
Embodiment one
In the present embodiment one, voltage zero-crossing detection circuit adopts circuit structure as described in Figure 3, and this structure comprises PMOS m
1, m
2, m
3, m
4, NMOS tube m
5, m
6, m
7, switching tube m
s0, m
s1, phase inverter inv, current source I
0and resistance R
0, supply voltage V
dD, below in conjunction with dc-dc as shown in Figure 1, the annexation of the voltage zero-crossing detection circuit described in the present embodiment be described and be applied to the principle of work of dc-dc: wherein, current source I
0for reference current source, provide bias current to amplifier, work as V
cknduring for high level, synchronous rectifier mn conducting, to inductance L afterflow, afterflow direction inputs to by PMOS m from ground to the voltage at the drain electrode SW of commutator tube mn, this drain electrode SW place
3, m
4with NMOS tube m
6, m
7the amplifier of composition, wherein PMOS m
3with NMOS tube m
6composition first order amplifier, PMOS m
4with NMOS tube m
7composition second level amplifier, due to current source I
0for reference current source, in the present invention, the metal-oxide-semiconductor size of mirror image can be identical, also can be proportional, but the present embodiment is with PMOS m
1, m
2, m
3, m
4size is identical, and NMOS tube m
5, m
6size is identical to be described for example, then flow through PMOS m
1, m
2, m
3electric current be all I
0, switching tube m
s0, m
s1conducting resistance can ignore.
As shown in Figure 3, first order amplifier is typical common grid amplifier, its DC voltage gain
Shown in (1):
A
v1＝(g
m6+g
mb6)(r
o3//r
o6)+1 (1)
And second level amplifier is common-source stage amplifier, its DC voltage gain is such as formula shown in (2):
A
v2＝g
m7(r
o4//r
o7) (2)
Then total DC voltage gain of two-stage amplifier is such as formula shown in (3):
A
v＝[(g
m6+g
mb6)(r
o3//r
o6)+1]g
m7(r
o4//r
o7) (3)
Can obtain from formula (3), the gain of this two-stage amplifier is very large, can amplify very small signal.
Work as V
ckp, V
cknwhen being all low level, power tube mp conducting, to output capacitance C
outcharging, switching tube m
s0cut-off, switching tube m
s1conducting, now voltage zero-crossing detection circuit described in the present embodiment one and the synchronous rectifier mn sw that drains is not connected, and does not affect whole circuit; Work as V
ckn, V
ckpwhen being all high level, synchronous rectifier mn conducting, switching tube m
s0conducting, switching tube m
s1cut-off, synchronous rectifier mn is to inductance afterflow, and direction is from ground to synchronous rectifier mn drain electrode sw, then this drain voltage V
swfor negative voltage, when | V
sw| > I
0× R
0time, NMOS tube m
6source voltage V
2for negative value, cause NMOS tube m
6gate source voltage V
gs6become large, the current formula (4) according to saturation region:
From formula (4), as the gate source voltage V of NMOS tube m6
gs6when becoming large, NMOS tube m
6drain-source current increase, but PMOS m
3electric current constant due to mirror image, then PMOS m
3enter linear zone, voltage V
2for high level, output drive signal V
cnfor low level; Then drive singal V
cnthe V obtained after feedback control loop
cknbe still high level, synchronous rectifier mn continues conducting; When synchronous rectifier mn afterflow is to meeting | V
sw|=I
0× R
0time, now voltage V
2for zero level, circuit is in DC operation dotted state; When synchronous rectifier mn continues afterflow to meeting | V
sW| < I
0× R
0time, then voltage V
2for positive voltage, NMOS tube m
6gate source voltage V
gs6diminish, known according to the current formula (4) of saturation region, NMOS tube m
6drain-source current reduce, NMOS tube m
6enter linear zone, voltage V
1for low level, then output drive signal V
cnfor high level, produce after certain time delay through feedback control loop, obtain as low level V
ckn, thus turn off synchronous rectifier mn.
In the present embodiment one, drive singal V
cnchange be ahead of SW point voltage, this advanced time is set as Δ t, as this advanced time Δ t and drive singal V
cnwhen the time of feedback control loop time delay is identical, then synchronous rectifier mn afterflow to zero time just drive singal V
cntransfer to the grid of synchronous rectifier mn, synchronous rectifier mn is closed, thus effectively prevents output capacitance C
outby synchronous rectifier mn, electric current is poured in down a chimney to ground.Be illustrated in figure 4 synchronous rectifier mn drain electrode SW terminal voltage, drive singal V
cnand synchronous rectifier mn grid voltage V
ckntime delay waveform schematic diagram.
For making drive singal V
cnthe advanced time is consistent through the time delay of feedback control loop with drive singal, by regulating resistance R in this embodiment
0resistance realize, when the circuit structure of feedback control loop is determined, then the time delay that produces through this feedback control loop of signal is then certain, now regulating resistance R
0resistance, control | V
sw| afterflow is to equaling I
0× R
0time, thus it is equal with the time delay that feedback control loop produces to realize leading time Δ t.
Embodiment two
Be illustrated in figure 5 another voltage zero-crossing detection circuit of the present invention, this circuit structure adds 5 PMOS m on the basis of voltage zero-crossing detection circuit as shown in Figure 3
8, m
9, m
10, m
11, m
12with a reference current source I
0, wherein PMOS m
8, PMOS m
9, PMOS m
10, PMOS m
11mirror image connects, and is series at PMOS m respectively successively
1, PMOS m
2, PMOS m
3, PMOS m
4source electrode and power supply V
dDbetween, form folding current source structure; PMOS m
12with reference current source I
0be series at power supply V
dDand between ground, and PMOS m
12grid drain electrode be connected, be PMOS m
1, m
2, m
3, m
4bias voltage is provided, ensures that these 4 PMOS are in degree of depth state of saturation; PMOS m
8grid and PMOS m
1drain electrode be connected, be the PMOS m of mirror image
8, m
9, m
10, m
11bias current is provided.
The effect that the present embodiment two increases by row's PMOS on the basis of embodiment one reduces supply voltage V
dDripple, make output signal more stable, prevent supply voltage V
dDin noise or burr be incorporated into control signal V
cnin cause maloperation.
Embodiment three
Be illustrated in figure 6 another voltage zero-crossing detection circuit of the present invention, this circuit removes second level amplifier on the basis of the voltage zero-crossing detection circuit described in embodiment one, namely removes PMOS m
4with NMOS tube m
7, directly by the output terminal V of first order amplifier
1as the V in embodiment one
cnexport feedback control loop to, the principle of work of this electric circuit inspection zero passage voltage is identical with circuit shown in embodiment one, adopts first stage amplifier to compare two-stage amplifier gain less, but circuit structure is simple, saves chip area.
Embodiment four
Be illustrated in figure 7 another voltage zero-crossing detection circuit of the present invention, wherein this circuit removes branch road described in the second amplifier, i.e. PMOS m on the basis of circuit structure described in embodiment two as shown in Figure 5
10, m
3with NMOS tube m
6, directly by the output V of first order amplifier
1as V
cninput to feedback control loop and generate control signal V
ckn, V
ckp.The principle of work of this electric circuit inspection zero passage voltage is identical with circuit shown in embodiment one, but it is less to adopt first stage amplifier to compare two-stage amplifier gain, but circuit structure is simple, saves chip area.
Above content is in conjunction with concrete preferred implementation further description made for the present invention, can not assert that specific embodiment of the invention is confined to these explanations.For general technical staff of the technical field of the invention, without departing from the inventive concept of the premise, some simple deduction or replace can also be made, all should be considered as belonging to protection scope of the present invention.
Claims (10)
1. a voltage zero-crossing detection circuit, is characterized in that, this circuit comprises PMOS m
1, m
2, m
3, NMOS tube m
5, m
6, m
s0, m
s1, reference current source I
0, resistance R
0and a phase inverter, wherein, PMOS m
2with NMOS tube m
5, PMOS m
1with reference current source I
0be series at successively respectively between power voltage terminal and ground, PMOS m
3source electrode connect supply voltage, drain electrode meet NMOS tube m
6make PMOS m
3with NMOS tube m
6and resistance R
0connect successively, resistance R
0another termination NMOS tube m
s0and m
s1drain electrode, NMOS tube m
s0source electrode meet an input voltage V of described voltage zero-crossing detection circuit
sw, grid meets an input control signal V
ckn; Input control signal V
cknnMOS tube m is met after described phase inverter
s1grid, NMOS tube m
s1source ground; PMOS m
1, m
2, m
3mirror image connects, NMOS tube m
5, m
6mirror image connects, by NMOS tube m
6drain electrode obtain the output control signal of described voltage zero-crossing detection circuit.
2. voltage zero-crossing detection circuit according to claim 1, is characterized in that, described NMOS tube m
s0and m
s1for switching tube.
3. voltage zero-crossing detection circuit according to claim 2, is characterized in that, described resistance R
0resistance can be ahead of described voltage zero-crossing detection circuit input voltage V according to the output control signal of described voltage zero-crossing detection circuit
swreach the Timing of zero voltage value.
4. voltage zero-crossing detection circuit according to claim 1, is characterized in that, this testing circuit also comprises a PMOS m
4with a NMOS tube m
7the series arm be composed in series successively, wherein PMOS m
4grid and PMOS m
3grid mirror image connects, source electrode is connected with supply voltage, NMOS tube m
7grid be connected to NMOS tube m
6drain electrode, source ground, the output control signal of described voltage zero-crossing detection circuit changes NMOS tube m into
7drain electrode output voltage.
5. a voltage zero-crossing detection circuit, is characterized in that, this testing circuit comprises PMOS m
1, m
2, m
3, m
8, m
9, m
10, m
12, NMOS tube m
5, m
6, m
s0, m
s1, two identical reference current sources, resistance R
0and a phase inverter, wherein, PMOS m
12with a reference current source, PMOS m
8with PMOS m
1and another reference current source, PMOS m
9with PMOS m
2and NMOS tube m
5be series at power supply V successively respectively
dDand between ground, wherein PMOS m
12, m
8and m
9source electrode all with power supply V
dDthe other end of connection, two reference current sources and NMOS tube m
5source electrode be all connected to ground; And PMOS m
8grid meet PMOS m
1source electrode, PMOS m
12grid drain electrode be connected, NMOS tube m
5grid drain electrode be connected; PMOS m
10, m
3with NMOS tube m
6and resistance R
0connect successively, wherein PMOS m
10source electrode connect supply voltage, resistance R
0another termination NMOS tube m
s0and m
s1drain electrode, NMOS tube m
s0source electrode meet an input voltage V of described voltage zero-crossing detection circuit
sw, grid meets an input control signal V
ckn; Control signal V
cknnMOS tube m is met after described phase inverter
s1grid, NMOS tube m
s1source ground; PMOS m
1, m
2, m
3, m
12grid all connected, PMOS m
8, m
9, m
10mirror image connects, NMOS tube m
5, m
6mirror image connects, by NMOS tube m
6drain electrode obtain the output control signal of described voltage zero-crossing detection circuit.
6. voltage zero-crossing detection circuit according to claim 5, is characterized in that, described NMOS tube m
s0, m
s1for switching tube.
7. voltage zero-crossing detection circuit according to claim 6, is characterized in that, described resistance R
0resistance can be ahead of described voltage zero-crossing detection circuit input voltage V according to the output control signal of described voltage zero-crossing detection circuit
swreach the Timing of zero voltage value.
8. voltage zero-crossing detection circuit according to claim 7, is characterized in that, described testing circuit also comprises PMOS m
11, m
4with NMOS tube m
7the series arm be composed in series successively, wherein, PMOS m
11source electrode meet supply voltage V
dD, grid and described PMOS m
10grid mirror image connects, PMOS m
4grid and described PMOS m
3grid mirror image connect, NMOS tube m
7grid and described NMOS tube m
6drain electrode connection, source ground, drain electrode output voltage replace NMOS tube m
6drain voltage as the output control signal of described voltage zero-crossing detection circuit.
9. there is a dc-dc for voltage zero-crossing detection circuit, comprise power tube mp, synchronous rectifier mn, inductance L, electric capacity C
out, supply voltage, feedback control loop, wherein, power tube mp and synchronous rectifier mn is series between supply voltage and ground, the drain voltage V of synchronous rectifier mn
swoutput voltage V after inductance L
outthrough electric capacity C
outto ground, and this output voltage V
outalso input to feedback control loop, this feedback control loop exports two control signal V
ckpand V
ckncontrol the grid of power tube mp and synchronous rectifier mn respectively, it is characterized in that, this dc-dc also comprise as arbitrary in claim 1-8 as described in voltage zero-crossing detection circuit, wherein, the drain voltage of synchronous rectifier mn is as the input voltage V of described voltage zero-crossing detection circuit
sw, the control signal V that described feedback control loop exports
cknas the input control signal of described voltage zero-crossing detection circuit, and the output control signal of this voltage zero-crossing detection circuit inputs to described feedback control loop.
10. a kind of dc-dc with voltage zero-crossing detection circuit according to claim 9, is characterized in that, output control signal and the control signal V obtained after described feedback control loop of described voltage zero-crossing detection circuit
cknoppositely.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010044464.4A CN102128973B (en) | 2010-01-19 | 2010-01-19 | Voltage zero-crossing detecting circuit and DC-DC converter with same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010044464.4A CN102128973B (en) | 2010-01-19 | 2010-01-19 | Voltage zero-crossing detecting circuit and DC-DC converter with same |
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| Publication Number | Publication Date |
|---|---|
| CN102128973A CN102128973A (en) | 2011-07-20 |
| CN102128973B true CN102128973B (en) | 2015-05-20 |
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| CN102735914B (en) * | 2012-05-10 | 2014-12-31 | 成都芯源系统有限公司 | synchronous rectification circuit and zero-crossing detection method |
| CN103424605A (en) * | 2012-05-19 | 2013-12-04 | 快捷半导体(苏州)有限公司 | Zero-current detection circuit and method, and voltage conversion circuit |
| CN102778602B (en) * | 2012-07-27 | 2014-07-02 | 电子科技大学 | Zero-cross detection circuit |
| CN103630735B (en) * | 2012-08-27 | 2016-04-13 | 上海占空比电子科技有限公司 | A kind of voltage slope change detection circuit and method |
| US9404948B2 (en) * | 2012-12-21 | 2016-08-02 | Microchip Technology Incorporated | Mains voltage zero-crossing detector |
| CN103346679B (en) * | 2013-07-12 | 2015-05-20 | 中颖电子股份有限公司 | Clamping circuit |
| CN103647438B (en) * | 2013-12-18 | 2016-03-02 | 嘉兴中润微电子有限公司 | Without the low-consumption power tube drive circuit of charge pump construction |
| CN103929048B (en) * | 2014-04-29 | 2016-04-20 | 中国科学院上海微系统与信息技术研究所 | A kind of zero cross detection circuit of Switching Power Supply |
| CN104092388A (en) * | 2014-06-17 | 2014-10-08 | 昆山弗尔赛能源有限公司 | Synchronous rectifying BOOST circuit with reverse current prevention |
| CN105510690B (en) * | 2014-09-22 | 2018-04-27 | 登丰微电子股份有限公司 | Zero passage voltage detection circuit and method |
| CN104578722B (en) * | 2014-12-30 | 2019-09-13 | 上海贝岭股份有限公司 | The zero cross detection circuit of inductive current in a kind of power switch chip |
| CN105406444A (en) * | 2015-11-20 | 2016-03-16 | 芜湖锐芯电子科技有限公司 | Zero-cross detection circuit |
| CN109061278B (en) * | 2018-06-19 | 2020-11-13 | 飞雕电器集团有限公司 | Zero-crossing detection circuit with ultralow power consumption |
| CN112977120A (en) * | 2019-12-02 | 2021-06-18 | 北京新能源汽车股份有限公司 | Discharging device and discharging method |
| CN112798854B (en) * | 2021-01-12 | 2024-05-24 | 拓尔微电子股份有限公司 | DC-DC zero crossing point detection circuit and control method |
| CN112910224B (en) * | 2021-01-16 | 2022-07-08 | 苏州浪潮智能科技有限公司 | Control circuit of buck converter and server |
| CN112816767B (en) * | 2021-02-26 | 2023-08-08 | 西安微电子技术研究所 | Inductance current zero-crossing detection circuit and method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101019320A (en) * | 2004-09-14 | 2007-08-15 | 皇家飞利浦电子股份有限公司 | DC/DC converter with dynamic offset compensation |
| CN101043216A (en) * | 2007-04-17 | 2007-09-26 | 清华大学 | Current equalization circuit for folded interpolation structure analog-digital converter |
| CN101199239A (en) * | 2005-03-22 | 2008-06-11 | 美国快捷半导体有限公司 | Single-stage digital power converter for driving LEDs |
| CN101540542A (en) * | 2009-03-18 | 2009-09-23 | 浙江大学 | Single-inductor switch direct current voltage converter and 4-mode control method |
-
2010
- 2010-01-19 CN CN201010044464.4A patent/CN102128973B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101019320A (en) * | 2004-09-14 | 2007-08-15 | 皇家飞利浦电子股份有限公司 | DC/DC converter with dynamic offset compensation |
| CN101199239A (en) * | 2005-03-22 | 2008-06-11 | 美国快捷半导体有限公司 | Single-stage digital power converter for driving LEDs |
| CN101043216A (en) * | 2007-04-17 | 2007-09-26 | 清华大学 | Current equalization circuit for folded interpolation structure analog-digital converter |
| CN101540542A (en) * | 2009-03-18 | 2009-09-23 | 浙江大学 | Single-inductor switch direct current voltage converter and 4-mode control method |
Non-Patent Citations (1)
| Title |
|---|
| 一种高效同步升压型芯片中过零检测电路的研究与分析;赵婉婉;《中国优秀硕士学位论文全文数据库 工程科技Ⅱ辑》;20090115(第01期);正文第1-65页 * |
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|---|---|
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