CN102116676A - Metallizing method of infrared focal plane detector for packaging metallization regions of window - Google Patents
Metallizing method of infrared focal plane detector for packaging metallization regions of window Download PDFInfo
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- CN102116676A CN102116676A CN2009102476473A CN200910247647A CN102116676A CN 102116676 A CN102116676 A CN 102116676A CN 2009102476473 A CN2009102476473 A CN 2009102476473A CN 200910247647 A CN200910247647 A CN 200910247647A CN 102116676 A CN102116676 A CN 102116676A
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Abstract
The invention relates to a metallizing method of an infrared focal plane detector for packaging metallization regions of a window, comprising the following steps: a layer of Cr or Ti, used as a riveting layer, is deposited in a metallization region of a substrate by an evaporation method, then, a layer of Ni, Pd or Pt is deposited on the riveting layer as a blocked layer, and then a thin layer of Au is deposited on the blocked layer as a protective layer, and finally, a layer of Au film is plated on the protective layer as a welding layer by a cyanide plating method. In the metallizing method of the infrared focal plane detector for the packaging metallization regions of the window, Au plating adopts combination of an evaporation deposition method and the cyanide plating method, the advantages and disadvantages of the two methods are complemented, so that the metalizing method has important significance for packaging quality of the infrared focal plane detector, cost and energy consumption reduction.
Description
Technical field
The present invention relates to photoelectric technology, particularly a kind of method for metallising of package window of infrared focal plane detector metallized area.
Background technology
The development of infrared focus plane Detection Techniques is had higher requirement to device package and infrared Thin Film Filter.A new generation's encapsulation technology is integrated with infrared window with infrared Thin Film Filter, and infrared Thin Film Filter directly is coated on the infrared window, and metallization around window again is welded into infrared focal plane detector with infrared window and infrared focal plane array at last.
At present, adopt vacuum evaporation in the infrared window manufacturing process usually and contain cyanogen electro-plating method realization metallization.Vacuum evaporation method is hydatogenesis one deck riveting layer (Metal Cr or Ti) on the Si substrate at first, and hydatogenesis one deck barrier layer (metal Ni, Pd or Pt) deposits one deck weld layer (metal A u) at last more then.The advantage of method of evaporating is that golden layer thickness is easy to control, and technological process is simple, and is little to the pollution of environment.Containing the cyanogen electro-plating method is to realize on the basis of vacuum evaporation method.Utilize vacuum evaporation method to prepare Seed Layer (being riveting layer and barrier layer) earlier, and the thin gold layer of one deck.Utilize electro-plating method to deposit bed thickness gold layer again as weld layer.Contain the cyanogen electro-plating method and have selectivity, i.e. deposited gold layer on Seed Layer only, other place does not deposit, and equipment is simple, therefore has the low advantage of cost.And the golden ply stress of electroplating is little, the adhesion height, and weldability is good, can improve the quality of product.
But, method of evaporating with contain cyanogen and electroplate plating Au and have following shortcoming:
Method of evaporating plating Au non-selectivity.The Au uniform deposition is at the Si substrate surface during evaporation, and the zone that need weld can not deposit the Au layer yet, and this method is serious to the waste of Au, and the service efficiency of Au is very low.Therefore method of evaporating plating Au cost is very high.
The firm poor performance of method of evaporating Au layer.The Au layer of method of evaporating deposition is a column structure, and the internal stress of Au layer is big, causes the fastness of Au layer poor.
The method of evaporating equipment needed thereby is huge, costs an arm and a leg the energy consumption height.
Contain cyanogen plating Au and have environmental pollution, handling cost height and treatment cost of waste liquor height.
The cyanideless electro-plating method is the environment-protection electroplating method that grew up in recent years, has than containing cyanogen electrochemical plating adhesion height, advantage that weldability is good, has avoided the problem of environmental pollution and liquid waste processing difficulty again.It is a kind of clean method of environmental protection.Therefore, electroplating Au can effectively reduce production costs, and improves the service efficiency of Au and the quality of Au layer, reduces energy consumption and environmental pollution.
Summary of the invention
Purpose of the present invention is to provide a kind of method for metallising that evaporation deposition method is plated the infrared focal plane detector window metallized area that Au and electrochemical plating plating Au be used in combination.
To achieve these goals, the present invention has adopted following technical scheme: a kind of method for metallising of package window of infrared focal plane detector metallized area, the metallized area that is included in substrate with method of evaporating deposition one deck Cr or Ti as riveting layer, on riveting layer, deposit layer of Ni, Pd or Pt again as barrier layer, the thin Au of deposition one deck adopts electric plating method to be coated with layer of Au film as weld layer on protective seam as protective seam then on barrier layer again; Au film weld layer wherein adopts cyanogenless electroplating technology to be coated with, and used cyanideless electro-plating formula of liquid and electroplating technological parameter are as follows:
Prescription: citric acid gold potassium (5～6g/L), open cylinder agent/pure water (5L/100L);
Electroplating technological parameter: pH value: 5.5～6.5; Temperature: 30～70 ℃; Cathode-current density: 0.001～0.005A/cm
2Anode: golden plate or platinum titanium net; Rate of deposition: 1～3nm/s.
The described cylinder agent composition of opening is tartrate, sal tartari, sodium thiosulfate and ethylenediamine tetraacetic acid second sodium.
The described thickness that is deposited on the barrier layer as the Au layer of protective seam is 50～300nm.
Described Au film thickness as weld layer is 1.00～5.00 μ m.
Described electroplate liquid is for containing cyanogen alkaline electro plating bath or containing neutral electroplate liquid of cyanogen or cyanideless electro-plating liquid.
The method for metallising of infrared focal plane detector window metallized area of the present invention is used in combination owing to evaporation deposition method being plated Au and electrochemical plating plating Au, the advantage of electrochemical plating can remedy the shortcoming of method of evaporating, for the package quality that improves infrared focal plane detector, reduce cost and energy consumption is significant.And have the following advantages and characteristics:
1, the surface-brightening of plating Au is careful, is bright-coloured golden yellow.Infrared window after the plating is not found the rete obscission through functional behind thermocycling, vacuum high-temperature impulse test and the adhesion test, and spectrum test is good.
2, soldering test shows, the infrared window of electro-plating method preparation combines firmly with infrared eye, does not have gas leak phenomenon.
3, a series of test shows, the infrared window of electro-plating method preparation is functional, satisfies the welding requirements of infrared eye fully.This method can replace the Au film that existing method of evaporating prepares metallized area, can obviously reduce production costs, and enhances productivity.
Embodiment
The method for metallising of package window of infrared focal plane detector metallized area of the present invention, the metallized area that is included in substrate with method of evaporating deposition one deck Cr or Ti as riveting layer, on riveting layer, deposit layer of Ni, Pd or Pt again as barrier layer, the thin Au of deposition one deck adopts the method for cyanideless electro-plating to be coated with layer of Au film as weld layer on protective seam as protective seam then on barrier layer again; Used cyanideless electro-plating formula of liquid and electroplating technological parameter are as follows:
Prescription: citric acid gold potassium (5～6g/L), open cylinder agent/pure water (5L/100L);
Electroplating technological parameter: pH value: 5.5～6.5; Temperature: 30～70 ℃; Cathode-current density: 0.001～0.005A/cm
2Anode: golden plate or platinum titanium net; Rate of deposition: 1～3nm/s.
Concrete operation steps is as follows:
A, with Si or Ge wafer as substrate, utilize the graphic structure that masking method is prepared to be needed;
B, adopt method of evaporating on substrate, to deposit one deck Cr or Ti, on riveting layer, deposit layer of Ni, Pd or Pt then again as barrier layer as riveting layer;
C, utilize method of evaporating on barrier layer, to deposit the thick Au layer of one deck 50～300nm as protective seam and the prime coat of electroplating Au;
D, utilization go mask liquid to remove mask;
E, with the substrate anchor clamps of packing into, dry after the clean substrate surfaces in cleansing solution with ultrasound wave;
F, on substrate welding electrode lead-in wire or clamp substrate as electrode with crocodile clip;
G, the anchor clamps that substrate will be housed immerse in the electroplate liquid prepare, and it is gold-plated to substrate to set electric current;
Anchor clamps are taken out in H, the good back of plating, put into ultrasound wave, with deionized water and clear water rinsing, remove the plating bath of remained on surface;
I, remove contact conductor or crocodile clip.
For the control of rate of deposition and plating Au thickness, can adopt following measure:
The control of rate of deposition: under the identical plating time conditions, control bath concentration and strength of current, obtain the Au film of different-thickness.Utilize the step film thickness gauge to measure the Au film thickness, thereby calculate the rate of deposition that calibrates Au film under different bath concentrations and the strength of current.
The control of THICKNESS CONTROL: under certain bath concentration and strength of current, utilize the rate of deposition of demarcating in advance, the control electroplating time obtains the Au film thickness that needs.
Embodiment 1:
According to above-mentioned prescription, prepared 500mL cyanideless electro-plating liquid, put into a slice 10mm * 10mm to be plated.Electroplate liquid pH value 5.5,40 ℃ of temperature, current density 0.002A/cm
2, 25 minutes time, anode adopts platinum titanium net.Electroplating back measurement Au layer thickness is 3.38 μ m.In the vacuum behind 320 ℃ of high temperature impact 30min, the fastness of utilizing 3M high temperature gummed tape tearing method to test electrodeposited coating, the result is good.
Embodiment 2:
According to above-mentioned prescription, prepared 500mL cyanideless electro-plating liquid, put into a slice 10mm * 10mm to be plated.Electroplate liquid pH value 5.5,55 ℃ of temperature, current density 0.002A/cm
2, 15 minutes time, anode adopts platinum titanium net.Electroplating back measurement Au layer thickness is 2.18 μ m.In the vacuum behind 320 ℃ of high temperature impact 30min, the fastness of utilizing 3M high temperature gummed tape tearing method to test electrodeposited coating, the result is good.
Embodiment 3:
According to above-mentioned prescription, prepared 500mL cyanideless electro-plating liquid, put into a slice 10mm * 10mm to be plated.Electroplate liquid pH value 5.5,65 ℃ of temperature, electric current 0.002A/cm
2, 35 minutes time, anode adopts golden plate.Electroplating back measurement Au layer thickness is 4.52 μ m.In the vacuum behind 320 ℃ of high temperature impact 30min, the fastness of utilizing 3M high temperature gummed tape tearing method to test electrodeposited coating, the result is good.
Claims (4)
1. the method for metallising of a package window of infrared focal plane detector metallized area, the metallized area that is included in substrate with method of evaporating deposition one deck Cr or Ti as riveting layer, on riveting layer, deposit layer of Ni, Pd or Pt again as barrier layer, the thin Au of deposition one deck adopts electric plating method to be coated with layer of Au film as weld layer on protective seam as protective seam then on barrier layer again; It is characterized in that described Au film weld layer adopts cyanogenless electroplating technology to be coated with, used cyanideless electro-plating formula of liquid and electroplating technological parameter are as follows:
Prescription: citric acid gold potassium (5～6g/L), open cylinder agent/pure water (5L/100L);
Electroplating technological parameter: pH value: 5.5～6.5; Temperature: 30～70 ℃; Cathode-current density: 0.001～0.005A/cm
2Anode: golden plate or platinum titanium net; Rate of deposition: 1～3nm/s.
2. the method for metallising of package window of infrared focal plane detector metallized area as claimed in claim 1 is characterized in that: described to open the cylinder agent be the solution that is mixed and is formed by tartrate, sal tartari, sodium thiosulfate and disodium ethylene diamine tetraacetate.
3. the method for metallising of package window of infrared focal plane detector metallized area as claimed in claim 1 is characterized in that: the described thickness that is deposited on the barrier layer as the Au layer of protective seam is 50～300nm.
4. the method for metallising of package window of infrared focal plane detector metallized area as claimed in claim 1 is characterized in that: described Au film thickness as weld layer is 1.00～5.00 μ m.
Priority Applications (1)
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| CN2009102476473A CN102116676A (en) | 2009-12-30 | 2009-12-30 | Metallizing method of infrared focal plane detector for packaging metallization regions of window |
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| CN2009102476473A CN102116676A (en) | 2009-12-30 | 2009-12-30 | Metallizing method of infrared focal plane detector for packaging metallization regions of window |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6439528A (en) * | 1987-08-06 | 1989-02-09 | Matsushita Electric Ind Co Ltd | Sealing method for infrared-ray transmission window |
| US20040200962A1 (en) * | 2003-04-11 | 2004-10-14 | Mitsubishi Denki Kabushiki Kaisha | Thermal type infrared detector and infrared focal plane array |
| CN101509135A (en) * | 2009-02-25 | 2009-08-19 | 无锡华测电子系统有限公司 | Method for manufacturing soldering-resistant metal membrane layer of tungsten-copper alloy heat sink substrate |
-
2009
- 2009-12-30 CN CN2009102476473A patent/CN102116676A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6439528A (en) * | 1987-08-06 | 1989-02-09 | Matsushita Electric Ind Co Ltd | Sealing method for infrared-ray transmission window |
| US20040200962A1 (en) * | 2003-04-11 | 2004-10-14 | Mitsubishi Denki Kabushiki Kaisha | Thermal type infrared detector and infrared focal plane array |
| CN101509135A (en) * | 2009-02-25 | 2009-08-19 | 无锡华测电子系统有限公司 | Method for manufacturing soldering-resistant metal membrane layer of tungsten-copper alloy heat sink substrate |
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Application publication date: 20110706 |