CN102077326A - Protective film composition for wafer dicing - Google Patents
Protective film composition for wafer dicing Download PDFInfo
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- CN102077326A CN102077326A CN2009801259364A CN200980125936A CN102077326A CN 102077326 A CN102077326 A CN 102077326A CN 2009801259364 A CN2009801259364 A CN 2009801259364A CN 200980125936 A CN200980125936 A CN 200980125936A CN 102077326 A CN102077326 A CN 102077326A
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- C—CHEMISTRY; METALLURGY
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- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
- C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
- C08L33/08—Homopolymers or copolymers of acrylic acid esters
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- C08L39/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen; Compositions of derivatives of such polymers
- C08L39/04—Homopolymers or copolymers of monomers containing heterocyclic rings having nitrogen as ring member
- C08L39/06—Homopolymers or copolymers of N-vinyl-pyrrolidones
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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Abstract
Disclosed is a protective film composition for wafer dicing, comprising at least one resin selected from the group consisting of polyethyloxazoline and polyvinylpyrrolidone, at least one component selected from the group consisting of a water-soluble resin and an alcoholic monomer, and a solvent, such as water or a mixture of water and an organic solvent.
Description
Technical field
The present invention relates to a kind of diaphragm composition with excellent heat stability, it is applied to the semiconductor cutting technique.
Background technology
In the manufacturing of semiconductor device, the wafer cutting technique is after the semiconductor layer compression technology, so that by cutting this wafer along the borderline region between device (being referred to as the mark road), a plurality of devices of arranging are respectively separated.After cutting technique, carry out chip manufacture technology, finish semiconductor product thus.
Along with the increase of semiconductor device integrated level, the width in mark road is more and more narrow, and the mechanical performance of laminated sheet also worse and worse.Therefore, change the wafer cutting technique and solve the problems referred to above.
Along with the increase of device integrated level, the main matter polyimides in the dielectric film of the uppermost position of laminated sheet is may be in the wafer cutting technique destroyed or damage.Therefore, the wafer cutting technique uses laser to bore a hole on wafer by using the blade cuts wafer to become, then with this wafer of blade cuts.Equally, can adopt the technology of only using the laser cut crystal.But, in using the laser cutting parameter of laser,, thereby cause the contaminated problem of upper surface of wafer because the heat of laser can produce smog and can spread.
The process that disclosed known technology addresses this problem comprises that with such as polyvinyl alcohol, the water-soluble resin of polyethylene glycol or cellulose and so on is coated in the upper surface of wafer, thereby forms diaphragm, a lase then.
But even used this method, because the heat of laser, silicon gas also can be produced by the cut surface of wafer, undesirably makes the diaphragm layering of wafer.And smog can produce with silicon gas, thereby may accumulate between the upper surface of the diaphragm that is in stratification state and wafer.When the diaphragm of water clean wafers subsequently, these smog deposits are not removed, and become defective and left behind.
Water-soluble resin has poor thermal stability.Therefore, when laser radiation in laser wafer cutting technique, can produce internal heat, as the water-soluble resin of polyvinyl alcohol and so on can by the heat pyrolysis.And cross-linking reaction may take place in pyrolytic process, even thereby the cross-linked material that generates water behind laser wafer cutting technique clean and can not be removed, but remain in the upper surface of wafer.
At present, laser wafer cutting technique mainly comprises with laser perforate on wafer, then with this wafer of blade cuts.With the blade cuts wafer time, have at chip protection film under the situation of high rigidity, diaphragm may break, thus the impurity that produces in the wafer cutting may infiltrate the space of the film that has broken.Because water-insoluble these impurity adhere to the upper surface of wafer, they can not rinsed out by water, thereby become defective.
Summary of the invention
Technical problem
Therefore, keep in mind the problems referred to above that association area runs into, obtained the present invention.The purpose of this invention is to provide a kind of diaphragm composition that is used for the wafer cutting, it has high thermal stability, thereby prevents in cutting technique because the generation of the pyrolysis cross-linked material that the radiation of laser causes; It shows the high adhesion strength to wafer, thereby prevents the layering of the diaphragm in laser wafer cutting technique; With and form diaphragm with suitable hardness, even so that when wafer was used blade cuts then with the laser perforate, this diaphragm can not break yet.
Technical scheme
The invention provides a kind of diaphragm composition that is used for the wafer cutting; comprise at least a resin that is selected from the group of forming by poly-ethyl azoles quinoline and polyvinylpyrrolidone; be selected from least a component in the group of forming by water-soluble resin and alcohols monomer; and solvent, such as the mixture of water or water and organic solvent.
Beneficial effect
According to the present invention; the described diaphragm composition that is used for the wafer cutting has high thermal stability; thereby prevent in cutting technique because the generation of the pyrolysis cross-linked material that the radiation of laser causes; with the high adhesion strength that shows wafer, thereby prevent the layering of the diaphragm in laser wafer cutting technique.Also have, use described diaphragm composition can form diaphragm, thereby can when cut crystal, not cause and the diaphragm relevant problem of breaking with suitable hardness.And because described diaphragm composition is to the good applicability of wafer, it can be widely used in having in the cutting technique of manufacture process of semiconductor device of integrated level of increase.
Best mode for carrying out the invention
The present invention be directed to the diaphragm composition that is used for the wafer cutting; comprise at least a resin that is selected from the group of forming by poly-ethyl azoles quinoline and polyvinylpyrrolidone; be selected from least a component in the group of forming by water-soluble resin and alcohols monomer; and solvent, such as the mixture of water or water and organic solvent.
In diaphragm composition according to the present invention; at least a resin in the group of forming by poly-ethyl azoles quinoline and polyvinylpyrrolidone of being selected from that can contain weight ratio 1: 9～7: 3; with be selected from least a component in the group of forming by water-soluble resin and alcohols monomer and can contain solvent in the total viscosity that makes described composition is made into the scope of 10～100cp.
The diaphragm composition that is used for wafer cutting can also comprise the water soluble surfactant active based on 10～80ppm of the resin Composition gross weight of described composition.
The example of the resin Composition that the common diaphragm composition that is used for the wafer cutting is used comprises such as polyvinyl alcohol (PVA), and the resin of polyethylene glycol (PEG) and cellulose and so on, and water-soluble resin are as polyacrylic acid (PAA) etc.Wherein, owing to not heat resistanceheat resistant or may produce crosslinked accessory substance under pyrolysis, the water-soluble resin of hydroxyl or carboxyl is problematic.But as being used in according to the water-soluble resin in the composition of the present invention, poly-ethyl azoles quinoline and polyvinylpyrrolidone have good thermal stability and high water-soluble.
Diaphragm composition according to the present invention preferably comprises the mixture of poly-ethyl azoles quinoline or poly-ethyl azoles quinoline and polyvinylpyrrolidone as at least a resin that is selected from the group of being made up of poly-ethyl azoles quinoline and polyvinylpyrrolidone.
The example of known poly-ethyl azoles quinoline is poly-(the 2-ethyl-2-azoles quinoline) of commodity Aquazol by name, and it has high water-soluble and good thermal stability.When using thermogravimetric analyzer (TGA) in nitrogen atmosphere, when measuring loss of weight with the firing rate of 10 ℃/min, loss of weight begins to occur in 350 ℃ or higher temperature, sharply decomposes to occur in 380 ℃.But, in decomposable process, do not produce crosslinked accessory substance, thereby do not form water-fast defective.
Also have, polyvinylpyrrolidone has high water-soluble and good thermal stability, when with TGA in nitrogen atmosphere, when measuring loss of weight with the firing rate of 10 ℃/min, loss of weight begin to occur in about 300 ℃ and sharply decomposition occur in about 400 ℃.But, in decomposable process, do not produce crosslinked accessory substance, thereby do not form water-fast defective.
In diaphragm composition according to the present invention, be selected from least a component in the group of forming by water-soluble resin and alcohols monomer, be to be used for improving diaphragm to the adherence of substrate with adjust the hardness of diaphragm.The example of water-soluble resin comprises polyvinyl alcohol, polyethylene glycol (PEG), polypropylene glycol (PPG), cellulose, polyacrylic acid (PAA) etc., and the example of alcohols monomer comprises ethylene glycol, diethylene glycol, triethylene glycol, tetraethylene glycol, propylene glycol, cyclohexanediol, cyclohexanedimethanol, pentaerythrite, trimethyl propyl alcohol etc.
Thus, polyvinyl alcohol, it is a water-soluble resin, high dissolution is in water and have the remarkable adhesion strength to wafer.Therefore, when using polyvinyl alcohol, the adhesion strength that is used for the diaphragm composition of wafer cutting can be enhanced, and prevents the layering of diaphragm under laser radiation thus.In addition, about polyvinyl alcohol, the water-soluble and bin stability after its dissolving changes according to its saponification degree and molecular weight.Be under 100% the situation at the saponification degree of polyvinyl alcohol, polyvinyl alcohol has poor water-soluble, and after being dissolved in water gel, thereby as time passes, its viscosity increases.Therefore, can use the polyvinyl alcohol of saponification degree with 87-90%.Because have the polyvinyl alcohol that saponification degree is 87-90%, its viscosity does not change as time passes, and it can be used as solution reagent.In addition, the water-soluble and stability of POLYPROPYLENE GLYCOL changes according to its molecular weight as time passes.When POLYPROPYLENE GLYCOL had 500～2000 the degree of polymerization, water-soluble and bin stability was good.Therefore, in the present invention, it is preferred using the polyvinyl alcohol of the degree of polymerization of saponification degree with 87-90% and 500-2000.
But, because polyvinyl alcohol has poor thermal stability, so it is using with the form of the mixture of poly-ethyl azoles quinoline with excellent heat stability and/or polyvinylpyrrolidone, and the scope of mixing makes and can not be created in 250 ℃ or following water-fast crosslinked accessory substance.
In diaphragm composition according to the present invention; be selected from least a resin in the group of forming by poly-ethyl azoles quinoline and polyvinylpyrrolidone; with at least a component that is selected from the group of forming by water-soluble resin and alcohols monomer; can use preferred 3: 7～7: 3 with 1: 9～7: 3 weight ratio.When these components when above-mentioned scope is used, show thermal stability, be desired the adherence of wafer and the hardness of diaphragm.
In diaphragm composition according to the present invention, the water soluble surfactant active is being worked aspect applicability that improves described composition and the enhancing bin stability.
The diaphragm that normally is used for laser wafer cutting technique can have 1 μ m or thicker thickness.If the diaphragm composition is poor for applicability, the difference of thickness will take place so, thereby process margin may be lowered between the center of wafer and its edge.Therefore, in diaphragm composition according to the present invention, add the water soluble surfactant active, thereby improved the applicability of composition.Water soluble surfactant active's example comprises polyether-modified alkylsiloxane, polyether-modified poly-alkylsiloxane, polyether-modified dimethyl silicone polymer with hydroxyl, the poly-alkylsiloxane of polyether-polyester modification with hydroxyl, nonionic polyacrylic acid water soluble surfactant active, the fluorine-based water soluble surfactant active of alcohol alcoxylates (alcohol alkoxylate) and polymerization, they can use separately, perhaps two kinds or be used in combination.
Also have, the present inventor has been found that this fact, and promptly the water soluble surfactant active plays a part dispersant in the diaphragm composition, so that the diaphragm composition can be not as time passes and gel.Therefore, according to diaphragm composition of the present invention because water soluble surfactant active's use has the applicability of enhancing and high bin stability.
In diaphragm composition according to the present invention, the water soluble surfactant active can use based on the amount of the 10-80ppm of the total weight of resin Composition in the composition.When the water soluble surfactant active when above-mentioned scope is used, the performance of diaphragm composition comprises that applicability and bin stability become fine, thermal stability, the adherence of wafer and the hardness of diaphragm also all is improved.
In diaphragm composition according to the present invention, solvent is a water.Perhaps, for the film thickness that increases the diaphragm composition or improve its applicability, solvent can use with the form of the mixture of water and organic solvent.Representative examples of organic comprises isopropyl alcohol, propylene glycol methyl ether acetate (PGMEA), and propylene glycol monomethyl ether (PGME) and alkyl carbonate, such as butylene, propene carbonate, carbonic acid glyceride or ethylene carbonate.These organic solvents can use separately or two or more is used in combination.
Propylene glycol monomethyl ether has high and compatibility water, even is enough to be dissolved in water with any mixing ratio.But 1-Methoxy-2-propyl acetate has 16g or solubility still less in every 100g water, therefore must use in above-mentioned scope.
Particularly, as butylene, propene carbonate, the alkyl carbonate with high polarity of carbonic acid glyceride or ethylene carbonate and so on are used as under the situation that organic solvent uses, and bin stability and applicability can advantageously be improved.
Ethylene carbonate at room temperature is a solid, but can be well water-soluble, and carbonic acid glyceride can be dissolved in the water with any mixing ratio.But butylene and propene carbonate at room temperature have 10% and 25% or littler water-soluble respectively, therefore must use in above-mentioned scope.
In diaphragm composition according to the present invention, add solvent so that total viscosity of composition is configured to 10-100cp.If the viscosity of diaphragm composition drops in the above-mentioned scope, just can show applicability preferably, and can obtain desirable adherence and diaphragm hardness wafer.
According to diaphragm composition of the present invention, can also comprise at least a additive known in the art in order to improve performance.
Particularly, the diaphragm composition that is used for the wafer cutting can also comprise that defoamer is used for suppressing the foaming of solution reagent, and the example of defoamer comprises polysiloxanes, poly-alkylsiloxane, fluorosilicone polymer etc.
In addition, The present invention be directed to the semiconductor device that uses described wafer cutting diaphragm preparation of compositions.Semiconductor device according to the invention in addition when wafer by with laser or blade cuts the time, can protect fully by protected film, and because diaphragm is easy to clean, can be prepared into does not have defective yet yet.
Can obtain better understanding of the present invention by following example.These examples are to be used for illustrationally, but should not be interpreted as limitation of the present invention.
Example 1～10 and comparative example 1～6: the diaphragm preparation of compositions that is used for the wafer cutting
Example 1
The poly-ethyl azoles quinoline (Aquazol that in a blender that is equipped with blender, adds 5g; 50) and the polyvinyl alcohol of 5g (PVA) (DP:500 the degree of polymerization (DP):; saponification degree (DS): 87-90%); and add entry as solvent so that the viscosity of solution is 60cP; after this; under room temperature and 500rpm, stirred 1 hour, thereby preparation is used for the diaphragm composition of wafer cutting.
Example 2
The poly-ethyl azoles quinoline (Aquazol that in a blender that is equipped with blender, adds 3g; DP:50); PVA (the DP:1700 of the polyvinylpyrrolidone of 3g (DP:1200) and 4g; DS:87-90%); and add entry as solvent so that the viscosity of solution is 60cP; after this, under room temperature and 500rpm, stirred 1 hour, thereby preparation is used for the diaphragm composition of wafer cutting.
Example 3
The poly-ethyl azoles quinoline (Aquazol that in a blender that is equipped with blender, adds 3g; DP:50); PVA (the DP:1700 of the polyvinylpyrrolidone of 3g (DP:1200) and 4g; DS:87-90%); and add entry and propylene glycol monomethyl ether (PGME) in the mixture of 70/30 (w/w) ratio as solvent so that the viscosity of solution is 60cP; after this, under room temperature and 500rpm, stirred 1 hour, thereby preparation is used for the diaphragm composition of wafer cutting.
Example 4
The poly-ethyl azoles quinoline (Aquazol that in a blender that is equipped with blender, adds 7g; DP:500); PVA (the DP:500 of 3g; DS:87-90%); and add entry and PGME in the mixture of 70/30 (w/w) ratio as solvent so that the viscosity of solution is 60cP; after this, under room temperature and 500rpm, stirred 1 hour, thereby preparation is used for the diaphragm composition of wafer cutting.
Example 5
The poly-ethyl azoles quinoline (Aquazol that in a blender that is equipped with blender, adds 3g; DP:500); PVA (DP:1700 with 7g; DS:87-90%); and add entry and PGME in the mixture of 70/30 (w/w) ratio as solvent so that the viscosity of solution is 60cP; after this, under room temperature and 500rpm, stirred 1 hour, thereby preparation is used for the diaphragm composition of wafer cutting.
Example 6
The poly-ethyl azoles quinoline (Aquazol that in a blender that is equipped with blender, adds 5g; DP:50) and the PVA (DP:500 of 5g; DS:87-90%); add surfactant (BYK-337 respectively based on the amount of the 30ppm that gathers ethyl azoles quinoline and PVA total weight; can buy to BYK) and defoamer (BYK-025; can buy to BYK); and add entry as solvent so that the viscosity of solution is 60cP; after this; under room temperature and 500rpm, stirred 1 hour, thereby preparation is used for the diaphragm composition of wafer cutting.
Example 7
The poly-ethyl azoles quinoline (Aquazol that in a blender that is equipped with blender, adds 3g; DP:50); PVA (the DP:1700 of the polyvinylpyrrolidone of 3g (DP:1200) and 4g; DS:87-90%); add respectively based on poly-ethyl azoles quinoline; surfactant (the BYK-337 of the amount of the 30ppm of polyvinylpyrrolidone and PVA total weight; can buy to BYK) and defoamer (BYK-025; can buy to BYK); and add entry as solvent so that the viscosity of solution is 60cP; after this, under room temperature and 500rpm, stirred 1 hour, thereby preparation is used for the diaphragm composition of wafer cutting.
Example 8
The poly-ethyl azoles quinoline (Aquazol that in a blender that is equipped with blender, adds 2g; DP:50); PVA (the DP:1700 of the polyvinylpyrrolidone of 2g (DP:1200) and 6g; DS:87-90%); add respectively based on poly-ethyl azoles quinoline; surfactant (the BYK-337 of the amount of the 30ppm of polyvinylpyrrolidone and PVA total weight; can buy to BYK) and defoamer (BYK-025; can buy to BYK); and add entry as solvent so that the viscosity of solution is 60cP; after this, under room temperature and 500rpm, stirred 1 hour, thereby preparation is used for the diaphragm composition of wafer cutting.
Example 9
The poly-ethyl azoles quinoline (Aquazol that in a blender that is equipped with blender, adds 7g; DP:500); PVA (the DP:500 of 3g; DS:87-90%); add surfactant (BYK-337 respectively based on the amount of the 30ppm that gathers ethyl azoles quinoline and PVA total weight; can buy to BYK) and defoamer (BYK-025; can buy to BYK); and add entry as solvent so that the viscosity of solution is 60cP; after this; under room temperature and 500rpm, stirred 1 hour, thereby preparation is used for the diaphragm composition of wafer cutting.
Example 10
The poly-ethyl azoles quinoline (Aquazol that in a blender that is equipped with blender, adds 3g; DP:500); PVA (the DP:1700 of 7g; DS:87-90%); the butylene of the triethylene glycol of 1g (TEG) and 0.3g; add surfactant (BYK-337 respectively based on the amount of the 30ppm that gathers ethyl azoles quinoline and PVA total weight; can buy to BYK) and defoamer (BYK-025; can buy to BYK); and add entry as solvent so that the viscosity of solution is 60cP; after this, under room temperature and 500rpm, stirred 1 hour, thereby preparation is used for the diaphragm composition of wafer cutting.
Comparative example 1
PVA (the DP:1700 that in a blender that is equipped with blender, adds 10g; DS:87-90%), and add entry as solvent so that the viscosity of solution is 60cP, after this; under room temperature and 500rpm, stirred 1 hour, thereby preparation is used for wafer cutting diaphragm composition.
Comparative example 2
PVA (the DP:1700 that in a blender that is equipped with blender, adds 9g; DS:87-90%) and the polyethylene glycol of 1g (PEG) (weight average molecular weight: 700); and add entry as solvent so that the viscosity of solution is 60cP; after this; under room temperature and 500rpm, stirred 1 hour, thereby preparation is used for the diaphragm composition of wafer cutting.
Comparative example 3
PVA (the DP:1700 that in a blender that is equipped with blender, adds 9g; DS:87-90%) and the pentaerythrite of 1g; and add entry and PGME in the mixture of 70/30 (w/w) ratio as solvent so that the viscosity of solution is 60cP; after this; under room temperature and 500rpm, stirred 1 hour, thereby preparation is used for the diaphragm composition of wafer cutting.
Comparative example 4
PVA (the DP:1700 that in a blender that is equipped with blender, adds 8g; DS:87-90%) and the PEG of 1g (weight average molecular weight: 700) and the pentaerythrite of 1g; and add entry and PGME in the mixture of 70/30 (w/w) ratio as solvent so that the viscosity of solution is 60cP; after this; under room temperature and 500rpm, stirred 1 hour, thereby preparation is used for the diaphragm composition of wafer cutting.
Comparative example 5
PVA (the DP:1700 that in a blender that is equipped with blender, adds 9g; DS:87-90%) and the PEG of 1g (weight average molecular weight: 700); adding is based on the surfactant (BYK-337 of the amount of the 300ppm of PVA and PEG total weight; can buy to BYK); and add entry as solvent so that the viscosity of solution is 60cP; after this, under room temperature and 500rpm, stirred 1 hour, thereby preparation is used for the diaphragm composition of wafer cutting.
Comparative example 6
PVA (the DP:1700 that in a blender that is equipped with blender, adds 9g; DS:87-90%) and the pentaerythrite of 1g; adding is based on the surfactant (BYK-337 of the amount of the 30ppm of PVA and pentaerythrite total weight; can buy to BYK); and add entry and PGME in the mixture of 70/30 (w/w) ratio as solvent so that the viscosity of solution is 60cP; after this, under room temperature and 500rpm, stirred 1 hour, thereby preparation is used for the diaphragm composition of wafer cutting.
Test case 1: the test of peeling rate
By spin-coating method the sample of each embodiment and comparative example is coated onto on the silicon oxide substrate with 4 feet sizes; adjust rotary speed (rpm) simultaneously; so that the film that obtains has the thickness of 1 μ m 110 ℃ of dryings after 15 minutes, thereby form a diaphragm.Measure the peeling rate of diaphragm in water with DRM.Measurement unit represents with the film thickness that is removed each second.Result of the test is as shown in table 1 below.
◎: 1000nm/s or more than
Zero: 800 and less than 1000nm/s between
△: 500 and less than 800nm/s between
*: less than 500nm/s
Test case 2: the test of applicability
The sample of each embodiment and comparative example is coated onto on the substrate of a silica with 4 feet sizes by spin-coating method; adjust rotary speed (rpm) simultaneously; so that the film that obtains has the thickness of 1 μ m 110 ℃ of dryings after 15 minutes, thereby form a diaphragm.After this, measure, and determine its standard deviation, estimate the applicability of diaphragm composition thus in center wafer and apart from the 2cm of all directions of center wafer and the film thickness of 4cm position.Result of the test is as shown in table 1 below.
◎: 1% or below
Zero: surpass 1% but be not more than 2%
△: surpass 2% but be not more than 4%
*: surpass 4%
Test case 3: the measurement of pencil hardness
The sample of each embodiment and comparative example is coated onto on the substrate of a silica with 4 feet sizes by spin-coating method; adjust rotary speed (rpm) simultaneously; so that the film that obtains has the thickness of 1 μ m 110 ℃ of dryings after 15 minutes, thereby form a diaphragm.After this, measure the pencil hardness of diaphragm according to JID D0202.Result of the test is as shown in table 1 below.
Test case 4: adhesive test
The sample of each embodiment and comparative example is coated onto on the substrate of a silica with 4 feet sizes by spin-coating method; adjust rotary speed (rpm) simultaneously; so that the film that obtains has the thickness of 1 μ m 110 ℃ of dryings after 15 minutes, thereby form a diaphragm.After this, draw lattice tests (adhesive tape test (taping test)) according to JIS K5600-5-6, result of the test is as shown in table 1 below.
◎: the lattice number (0) of separation
Zero: the lattice number of separation (1 between) less than 5
△: the lattice number of separation (5 between) less than 10
*: the lattice number of separation (10 or more than)
Test case 5: the test of thermal stability
The sample of each embodiment and comparative example is coated onto on the substrate of a silica with 4 feet sizes by spin-coating method; adjust rotary speed (rpm) simultaneously; so that the film that obtains has the thickness of 1 μ m 110 ℃ of dryings after 15 minutes, thereby form a diaphragm.After this, with diaphragm be positioned in the hot air cabinet 250 ℃ 10 minutes, check then whether it is water-washed away, in order whether to confirm because heat has produced water-fast pyrolysis cross-linked material.Result of the test is as shown in table 1 below.
◎: peel off state fully
Zero: fine particles exists
△: a large amount of non-released part exist
*: the non-state of peeling off
Test case 6: the test of bin stability
When with the sample of embodiment and comparative example during in room temperature preservation, each week is measured its viscosity and applicability, checks thus whether its performance changes as time passes.Result of the test is as shown in table 1 below.
◎: 36 weeks or longer time are stable
Zero: 18 week or longer time are stable
△: 8 weeks or longer time are stable
*: it is stable to be no more than for 8 weeks
Table 1
| Peeling rate | Applicability | Pencil hardness | Adherence | Thermal stability | Bin stability |
| Example 1 | ◎ | ◎ | 7H | ◎ | ◎ | ○ |
| Example 2 | ◎ | ○ | 9H | ○ | ◎ | ○ |
| Example 3 | ◎ | ○ | 9H | ○ | ◎ | ○ |
| Example 4 | ◎ | ◎ | 7H | ◎ | ◎ | ○ |
| Example 5 | ◎ | ◎ | 7H | ◎ | ◎ | ○ |
| Example 6 | ◎ | ◎ | 9H | ○ | ◎ | ◎ |
| Example 7 | ◎ | ◎ | 7H | ◎ | ◎ | ◎ |
| Example 8 | ◎ | ◎ | 9H | ◎ | ○ | ◎ |
| Example 9 | ◎ | ◎ | 7H | ○ | ◎ | ◎ |
| Example 10 | ◎ | ◎ | 5H | ◎ | ◎ | ◎ |
| Comparative example 1 | △ | × | 9H | ◎ | △ | ○ |
| Comparative example 2 | ○ | ◎ | H | × | △ | ○ |
| Comparative example 3 | △ | ○ | H | × | △ | ○ |
| Comparative example 4 | ○ | ○ | H | × | △ | △ |
| Comparative example 5 | ○ | ◎ | H | × | △ | ○ |
| Comparative example 6 | △ | ○ | H | × | △ | △ |
Claims (11)
1. a diaphragm composition that is used for the wafer cutting comprises at least a resin that is selected from the group of being made up of poly-ethyl azoles quinoline and polyvinylpyrrolidone; Be selected from least a component in the group of forming by water-soluble resin and alcohols monomer; Solvent with the mixture that comprises water or water and organic solvent.
2. diaphragm composition according to claim 1; wherein saidly be selected from least a resin in the group of forming by poly-ethyl azoles quinoline and polyvinylpyrrolidone and describedly be selected from least a component in the group of forming by water-soluble resin and alcohols monomer with weight ratio use in 1: 9～7: 3 with to use described solvent so that make total viscosity of described composition be 10～100cp.
3. diaphragm composition according to claim 1 further comprises the water soluble surfactant active, and described water soluble surfactant active uses with the amount based on the 10-80ppm of the total weight of the resin Composition of described composition.
4. diaphragm composition according to claim 1, the wherein said at least a resin that is selected from the group of being made up of poly-ethyl azoles quinoline and polyvinylpyrrolidone is poly-ethyl azoles quinoline.
5. diaphragm composition according to claim 1, wherein said water-soluble resin is selected from by polyvinyl alcohol, polyethylene glycol (PEG); polypropylene glycol (PPG); in the group that cellulose and polyacrylic acid (PAA) are formed and described alcohols monomer be selected from by ethylene glycol diethylene glycol; triethylene glycol; tetraethylene glycol, propylene glycol, cyclohexanediol; cyclohexanedimethanol is in the group that pentaerythrite and trimethyl propyl alcohol are formed.
6. diaphragm composition according to claim 1, the wherein said at least a component that is selected from the group of forming by water-soluble resin and alcohols monomer be have saponification degree be 87～90% and the degree of polymerization be 500～2000 polyvinyl alcohol.
7. diaphragm composition according to claim 1; the wherein said at least a resin that is selected from the group of forming by poly-ethyl azoles quinoline and polyvinylpyrrolidone be gather ethyl azoles quinoline and the described at least a component that is selected from the group of forming by water-soluble resin and alcohols monomer be have saponification degree be 87～90% and the degree of polymerization be 500～2000 polyvinyl alcohol.
8. diaphragm composition according to claim 3; wherein said water soluble surfactant active is selected from by polyether-modified alkylsiloxane; polyether-modified poly-alkylsiloxane; polyether-modified dimethyl silicone polymer with hydroxyl; the poly-alkylsiloxane of polyether-polyester modification with hydroxyl; nonionic polyacrylic acid water soluble surfactant active, one or more in the group that the fluorine-based water soluble surfactant active of alcohol alcoxylates and polymerization forms.
9. diaphragm composition according to claim 1; wherein said solvent is the mixture of water and described organic solvent; and described organic solvent is selected from by isopropyl alcohol; propylene glycol methyl ether acetate (PGMEA); propylene glycol monomethyl ether (PGME), butylene, propene carbonate; in the group that carbonic acid glyceride and ethylene carbonate are formed one or more.
10. diaphragm composition according to claim 9, wherein said organic solvent is selected from by butylene, propene carbonate, one or more in the group that carbonic acid glyceride and ethylene carbonate are formed.
11. a semiconductor device uses each described diaphragm preparation of compositions in the claim 1 to 10.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020080050260A KR101539762B1 (en) | 2008-05-29 | 2008-05-29 | Protective film composition for dicing a wafer |
| KR1020080050261A KR101539763B1 (en) | 2008-05-29 | 2008-05-29 | Protective film composition for dicing a wafer |
| KR10-2008-0050261 | 2008-05-29 | ||
| KR10-2008-0050260 | 2008-05-29 | ||
| PCT/KR2009/002727 WO2009145526A2 (en) | 2008-05-29 | 2009-05-22 | Protective film composition for wafer dicing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102077326A true CN102077326A (en) | 2011-05-25 |
| CN102077326B CN102077326B (en) | 2014-04-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200980125936.4A Active CN102077326B (en) | 2008-05-29 | 2009-05-22 | Protective film composition for wafer dicing |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5511799B2 (en) |
| CN (1) | CN102077326B (en) |
| TW (1) | TWI399402B (en) |
| WO (1) | WO2009145526A2 (en) |
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2009
- 2009-05-22 JP JP2011511503A patent/JP5511799B2/en active Active
- 2009-05-22 CN CN200980125936.4A patent/CN102077326B/en active Active
- 2009-05-22 WO PCT/KR2009/002727 patent/WO2009145526A2/en active Application Filing
- 2009-05-25 TW TW98117363A patent/TWI399402B/en active
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Also Published As
| Publication number | Publication date |
|---|---|
| JP5511799B2 (en) | 2014-06-04 |
| TWI399402B (en) | 2013-06-21 |
| WO2009145526A3 (en) | 2010-03-04 |
| TW201000550A (en) | 2010-01-01 |
| WO2009145526A2 (en) | 2009-12-03 |
| CN102077326B (en) | 2014-04-16 |
| JP2011522411A (en) | 2011-07-28 |
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