CN102074610A - Beta-radiation detector based on field effect tube structure of silicon carbide metal semiconductor - Google Patents
Beta-radiation detector based on field effect tube structure of silicon carbide metal semiconductor Download PDFInfo
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Abstract
The invention discloses a beta-radiation detector based on a field effect tube structure of a silicon carbide metal semiconductor, which mainly solves the problem that the traditional beta-radiation detector has poor radiation-resistant performance and low energy conversion efficiency. The detector comprises an n-type substrate (8), a p-type buffer layer (7), an n-type channel (6) with concentration of 3.5 to 4*1017cm<-3>, an n-type buffer layer (5) and an ohmic contact layer (4) from the bottom up. A source drain electrode (2) is deposited on the ohmic contact layer, and a semitransparent Schottky contact layer (1) is deposited on the n-type buffer layer, wherein the Schottky contact layer is made of high potential barrier Schottky metal of Au, Ti or Pt. The burying depth of the Schottky contact layer (1) in the n-type buffer layer (5) is 0.06-0.08mum, and the surface region except a grid electrode, a source electrode and a drain electrode is covered by a SiO2 buffer layer (3). The invention has characteristics of strong irradiation-resistant performance, high energy conversion efficiency and high detection efficiency, and can be used for detecting beta-rays in nuclear energy.
Description
Technical field
The invention belongs to microelectronic, refer more particularly to a kind of β irradiation detector, can be used for beta-ray ionization radiation detection field based on the silicon carbide metal-semiconductor field effect tubular construction.
Technical background
Semiconductor radiation detector is the gas detector that continues, a kind of novel advanced person's who grows up after the scintillator detector detector.Its basic principle is to adopt semiconductor technology, as evaporation, and diffusion, ion injections etc. on semiconductor chip, by make thicker depletion layer or diffusion region under the condition of work of reverse biased, are used for surveying incident ray or charged particle.The conventional semiconductor radiation detector all is based on Si, and structures such as the diode of GaAs material and PIN pipe are mainly used in and survey α particle, β ray and neutron etc.
Semiconductor radiation detector has very high requirement to material, it is generally acknowledged have following characteristic:
(1) bigger energy gap when guaranteeing detector work, has higher resistivity and lower leakage current;
(2) favorable manufacturability energy makes the purity height easily, and the crystal that integrality is good has favorable mechanical performance and chemical property simultaneously, is convenient to carry out machining, is made into potential barrier contact or ohmic contact easily;
(3) You Yi physical property, the reverse biased that ability is higher, reverse current is little, and forward current is also little; Long-pending wanting of mobility of charge carrier rate-life-span guarantees that detector has excellent energy resolution greatly in the material simultaneously.
Traditional Si, GaAs junction field effect transistor device not too are fit to fields such as nuclear radiation detection, are because the thermal conductivity of these devices is low, puncture voltage is lower, power density is low, anti-radiation performance is not good.In order to satisfy at national defence and medical field high-performance, the demand of high-reliable semiconductor radiation detector needs the radiation detector of exploitation based on novel semiconductor material.
The SiC of semi-conducting material has the broad stopband width, 2.0 * 10 of 2.6～3.2eV
7Cms
-1High saturated electron drift velocity, 2.2MVcm
-1High breakdown electric field and 3.4～4.9Wcm
-1S
-1Performances such as high heat conductance, and has lower dielectric constant, these characteristics have determined it all to have great application potential at aspects such as high temperature, high frequency, large power semiconductor device, radioresistance, digital integrated circuits, especially radiation resistance is good and be suitable for advantage such as nuclear environment work, therefore will have the better application prospect based on the SiC radio-resisting semiconductor device in the radiation detection field.Xiang Guan scientific research personnel has also done the research of this respect for this reason.Metal-semiconductor field effect transistor based on SiC is the field-effect transistor that replaces PN junction with golden half hitch.The metal semiconductor contact process allows the raceway groove of metal-semiconductor field effect transistor to do shortlyer, helps improving the switching speed and the operating frequency of device.
Document " Nuclear Instruments and Methods in Physics ResearchA 583 (2007) 157-161 " " Silicon carbide for UV, alpha, beta and X-ray detectors:Results and perspectives " the imagination of having introduced that Italian Francesco Moscatelli proposes based on the beta rediation detector of SiC metal semiconductor structure.This structure is extension one deck p type carborundum on the semi-insulating substrate of carborundum, and extension one deck n type carborundum on p type carborundum by the highly doped formation source-drain area of n+, forms grid at zone line, as shown in Figure 3 afterwards.But thisly there is the high density surface trap based on traditional Si C Schottky junction structure field-effect transistor, in the SiC material, be subjected to first type surface trap trapped electron to form surface charge, a part of power line is terminated on the surface charge, because under the high electric field action in grid leak district, source electrode flows to the electronics of drain electrode and can be captured by surface trap through raceway groove the time, thereby form depletion layer on the surface, make effective channel thickness attenuation of current delivery, thereby had influence on the electric property of metal-semiconductor field effect transistor device.After the β ray arrives detector surface,, have only part β ray can enter device inside simultaneously owing to be subjected to stopping of thicker gate metal layer.The β particle that only enters depletion region just can have contribution to electric current output.Therefore this thicker grid structure causes the projectile energy loss big, and energy conversion efficiency is lower.
Summary of the invention
The objective of the invention is to avoid the defective of above-mentioned prior art, utilize the unique advantage of SiC semi-conducting material, propose a kind of based on silicon carbide metal-semiconductor field effect transistors β irradiation detector and preparation method thereof, cause the loss of incident β particle energy big to weaken traditional MESFET structure detector because of surface trap effect and thicker grid structure, the low influence to device performance of energy conversion efficiency improves the efficient of surveying.
For achieving the above object, the β irradiation detector that the present invention proposes based on the silicon carbide metal-semiconductor field effect tubular construction, comprise the ohmic contact layer that n type substrate, p type resilient coating, n type raceway groove, n type resilient coating and both sides n+ mix from bottom to top, be deposited with metal Ni on this ohmic contact layer as source-drain electrode, the translucent schottky contact layer of n type resilient coating zone line deposit, and imbed in the n type resilient coating, this schottky contact layer is made of high barrier schottky metal A u/Ti/Pt, and the surf zone beyond grid and the source-drain electrode is coated with one deck SiO
2Passivation layer, wherein the concentration of n type raceway groove is 3.5～4 * 10
17Cm
-3, the degree of depth that schottky contact layer is imbedded n type resilient coating is 0.06～0.08 μ m.
For achieving the above object, the β irradiation detector manufacture method based on the silicon carbide metal-semiconductor field effect tubular construction provided by the invention comprises the steps:
(1) extension one layer thickness is 0.15 μ m on n type 4H-SiC substrate, and doping content is 1.4 * 10
15Cm
-3P type epitaxial loayer;
(2) extension one layer thickness is 0.26 μ m on p type resilient coating, and doping content is 3.5～4 * 10
17Cm
-3N type raceway groove;
(3) extension one layer thickness is 0.1 μ m on the n raceway groove, and doping content is 1.7 * 10
17Cm
-3N type resilient coating;
(4) extension one layer thickness is 0.15 μ m on n type resilient coating, and doping content is 1 * 10
19Cm
-3Source-drain layer;
(5) dry-oxygen oxidation on the epitaxial loayer in source-drain layer forms SiO
2Passivation layer;
(6) adopt wet etching SiO
2The SiO on two side areas surface on the passivation layer
2Form source-drain area, deposited by electron beam evaporation Ni, forming thickness at this source-drain area is 0.2 μ m metal ohmic contact source-drain electrode;
(7) adopt wet etching passivation layer zone line, vertically be etched to n type buffer-layer surface, form the area of grid of irradiation detector, the surf zone beyond the source metal drain electrode carries out dry-oxygen oxidation and forms one deck SiO
2Cover layer;
(8), adopt wet etching to fall this surperficial SiO at the zone line of distance drain electrode 0.8 μ m and source electrode 0.4 μ m
2With the n type resilient coating of 0.06～0.08 μ m degree of depth, adopt the electron beam evaporation translucent high barrier schottky metal Ti of deposition thickness 100nm or metal Pt or metal A u in this etch areas, form the schottky metal grid.
The present invention compared with prior art has following advantage:
(1) the present invention utilizes the strong characteristics of the anti-irradiation ability of silicon carbide structure, can guarantee under the radiation of nuclear radiation and cosmic ray, and electronics still can operate as normal, is very favorable for surveying the β ray;
(2) β irradiation detector of the present invention adopts and buries grid silicon carbide metal-semiconductor field effect transistors structure based on buried channel, with respect to traditional metal-semiconductor field effect transistor structure, owing to increased n type resilient coating, can be so that effectively conducting channel be away from the surface, weakened the surface trap effect, thereby weaken the influence of surface trap, improved device performance the electric property of device;
(3) n type channel doping concentration of the present invention is 3.5～4 * 10
17Cm
-3, be higher than conventional metals semiconductor field effect transistor n type channel doping concentration, help improving raceway groove conductive current density; Metal gates is imbedded the n type resilient coating degree of depth 0.06～0.08 μ m, do not imbed n resilient coating metal gates relatively and can reduce the surface trap effect, simultaneously along with burial depth increases, effectively the thickness of conducting channel reduces, drain saturation current also reduces thereupon, thereby has reduced the influence of drain saturation current to device.
(4) the present invention adopts the thick thin metal gates of 100nm, has effectively reduced metal gates the low energy incoming particle stopped that improve energy conversion efficiency, detection efficient is higher.
Description of drawings
Fig. 1 is a β irradiation panel detector structure schematic diagram of the present invention;
Fig. 2 is the main schematic flow sheet that the present invention makes β irradiation detector;
Fig. 3 is traditional metal-semiconductor field effect transistor structural representation.
Embodiment
With reference to Fig. 1, the β irradiation detector based on the silicon carbide metal-semiconductor field effect tubular construction of the present invention comprises mainly that from bottom to top thickness is that 0.4 μ m doping content is 1 * 10
18Cm
-3 N type substrate 8; Be that a layer thickness is that 0.15 μ m doping content is 1.4 * 10 above the substrate
15m
-3P type resilient coating 7; Be that a layer thickness is that 0.26 μ m doping content is 3.5～4 * 10 on the p type resilient coating 7
17Cm
-3N type raceway groove 6; Be that one deck doping content is 1.7 * 10 on the n type raceway groove 6
17Cm
-3, thickness is the n type resilient coating 5 of 0.1 μ m; The both sides on n type resilient coating 5 surfaces are that doping content is 1 * 10
19Cm
-3 Ohmic contact layer 4, be deposited with metal Ni on this ohmic contact layer as source-drain electrode 2, n type resilient coating zone line deposition thickness is the translucent schottky contact layer 1 of 100nm, this schottky contact layer is made of high barrier schottky metal A u or Ti or Pt, it is imbedded in the n type resilient coating 5, and the degree of depth of imbedding n type resilient coating 5 is 0.06～0.08 μ m; Surf zone beyond grid and the source-drain electrode is coated with one deck SiO
2Passivation layer 3.
With reference to Fig. 2, the method for making of the present invention β irradiation shown in Figure 1 detector describes in detail by following embodiment:
Embodiment 1
In the 1st step, selecting thickness for use is that 0.4 μ m doping content is 1 * 10
18Cm
-3N type 4H-SiC substrate make substrate 8, after the cleaning,, be 1570 ℃ at epitaxial temperature with low pressure hot wall chemical vapor deposition method LPCVD, pressure 100mbar, growth gasses is C
3H
8, SiH
4And H
2Condition under, epitaxial growth thickness is 0.15 μ m on substrate, doping content is 1.4 * 10
15Cm
-3The p type resilient coating 7 of 4H-SiC, shown in Fig. 2 a.
The 2nd step with low pressure hot wall chemical vapor deposition method LPCVD, was 1570 ℃ at epitaxial temperature, pressure 100mbar, and growth gasses is C
3H
8, SiH
4And H
2Condition under, extension one layer thickness is 0.26 μ m on p type resilient coating 7, doping content is 3.5 * 10
17Cm
-3N type raceway groove 6, shown in Fig. 2 b;
The 3rd step with low pressure hot wall chemical vapor deposition method LPCVD, was 1570 ℃ at epitaxial temperature, pressure 100mbar, and growth gasses is C
3H
8, SiH
4And H
2Condition under, extension one layer thickness is 0.1 μ m on the n raceway groove, doping content is 1.7 * 10
17Cm
-3N type resilient coating 5, shown in Fig. 2 c;
In the 4th step, extension one layer thickness is the carborundum of 0.15 μ m on n type resilient coating 5, adopts ion to inject and mixes, and forming doping content is 1 * 10
19Cm
-3N type ohmic contact layer 4, shown in Fig. 2 d;
The 5th step, under 1100 ± 50 ℃ of temperature, the outer substrate of delaying of step 4 is carried out two hours dry-oxygen oxidation, form SiO
2Passivation layer 3 is shown in Fig. 2 e;
The 6th step is at SiO
2Two side areas adopts wet etching to fall its surperficial SiO on the passivation layer 3
2Form source-drain area, the metal ohmic contact that deposited by electron beam evaporation Ni leaks as the source at this source-drain area, short annealing 10min under 1000 ℃ nitrogen atmosphere high temperature, forming thickness is 0.2 μ m metal ohmic contact source-drain electrode 2, shown in Fig. 2 f;
The 7th step, adopt wet etching to go out the area of grid of irradiation detector at the passivation layer zone line, promptly selecting concentration for use is 5% buffered HF acid corrosion 10 seconds, with SiO
2Passivation layer 3 zone lines are etched to n type resilient coating 5 surfaces, and dry-oxygen oxidation is carried out in the zone beyond the source metal drain electrode 2, form one deck SiO
2Passivation layer 3, shown in Fig. 2 g;
In the 8th step, the zone line at distance source electrode 0.4 μ m and distance drain electrode 0.8 μ m adopts wet etching to fall its surperficial SiO
2And continue to be etched to the n type resilient coating 5 of the 0.06 μ m degree of depth downwards, on the resilient coating 5 that etches, adopt the translucent high barrier schottky metal Ti of electron beam evaporation deposition thickness 100nm again, short annealing 10min forms schottky metal grid 1 under the high temperature of 1000 ℃ of nitrogen atmospheres, shown in Fig. 2 h.
The first step, selecting substrate thickness for use is that 0.4 μ m doping content is 1 * 10
18Cm
-3N type 4H-SiC substrate make substrate (8), clean back C
3H
8, SiH
4And H
2, H wherein
2For carrying gas, growth thickness is that 0.15 μ m doping content is 1.4 * 10 on the epitaxial surface
15Cm
-3The p type resilient coating 7 of 4H-SiC, shown in Fig. 2 a;
Second step with low pressure hot wall chemical vapor deposition method LPCVD, was 1570 ℃ at epitaxial temperature, pressure 100mbar, and growth gasses is C
3H
8, SiH
4And H
2Condition under, extension one deck doping content is 3.7 * 10 on p type resilient coating
17Cm
-3, thickness is the n type raceway groove 6 of 0.26 μ m, shown in Fig. 2 b;
The 3rd step with low pressure hot wall chemical vapor deposition method LPCVD, was 1570 ℃ at epitaxial temperature, pressure 100mbar, and growth gasses is C
3H
8, SiH
4And H
2Condition under, extension one deck doping content is 1.7 * 10 on the n raceway groove
17Cm
-3, thickness is the n type resilient coating 5 of 0.1 μ m, shown in Fig. 2 c;
In the 4th step, extension one layer thickness is 0.15 μ m carborundum on n type resilient coating, and adopt ion to inject carrying out highly doped to this zone is 1 * 10 to form doping content
19Cm
-3 Ohmic contact 4 is shown in Fig. 2 d;
In the 5th step, under 1100 ± 50 ℃ of temperature, go on foot the dry-oxygen oxidation that the outer substrate of delaying carries out two hours, formation SiO to the 4th
2Passivation layer is shown in Fig. 2 e;
The 6th step is at SiO
2Two side areas adopts wet etching to fall surperficial SiO on the passivation layer
2Form source-drain area, the metal ohmic contact that deposited by electron beam evaporation Ni leaks as the source at this source-drain area, short annealing 10min under the high temperature of 1000 ℃ of nitrogen atmospheres, forming thickness is 0.2 μ m metal ohmic contact source-drain electrode, shown in Fig. 2 f;
In the 7th step, adopt wet etching to go out the area of grid of irradiation detector at the passivation layer zone line.Selecting concentration for use is 5% buffered HF acid corrosion 10 seconds, at SiO
2Passivation layer 3 zone lines are etched to n type buffer-layer surface.And the zone beyond the source metal drain electrode 2 carried out dry-oxygen oxidation, form one deck SiO
2Cover layer, shown in Fig. 2 g;
In the 8th step, the zone line at distance source electrode 0.4 μ m and distance drain electrode 0.8 μ m adopts wet etching to fall the SiO on surface
2And continue to be etched to the n type resilient coating 5 of the 0.07 μ m degree of depth downwards, on the resilient coating 5 that etches, adopt the translucent high barrier schottky metal Pt of electron beam evaporation deposition thickness 100nm again, short annealing 10min forms schottky metal grid 1 under the high temperature of 1000 ℃ of nitrogen atmospheres, shown in Fig. 2 h.
In the A step, selecting substrate thickness for use is that 0.4 μ m doping content is 1 * 10
18Cm
-3N type 4H-SiC substrate make substrate (8), after the cleaning,, be 1570 ℃ at epitaxial temperature with low pressure hot wall chemical vapor deposition method LPCVD, pressure 100mbar; Growth gasses is C
3H
8, SiH
4And H
2, H wherein
2For carrying gas, growth thickness is that 0.15 μ m doping content is 1.4 * 10 on the epitaxial surface
15Cm
-3The p type resilient coating 7 of 4H-SiC, shown in Fig. 5 a;
The B step with low pressure hot wall chemical vapor deposition method LPCVD, is 1570 ℃ at epitaxial temperature, pressure 100mbar, and growth gasses is C
3H
8, SiH
4And H
2Condition under, extension one deck doping content is 4.0 * 10 on p type resilient coating
17Cm
-3, thickness is the n type raceway groove 6 of 0.26 μ m, shown in Fig. 5 b;
The C step with low pressure hot wall chemical vapor deposition method LPCVD, is 1570 ℃ at epitaxial temperature, pressure 100mbar, and growth gasses is C
3H
8, SiH
4And H
2Condition under, extension one deck doping content is 1.7 * 10 on the n raceway groove
17Cm
-3, thickness is the n type resilient coating 5 of 0.1 μ m, shown in Fig. 5 c;
In the D step, extension one layer thickness is 0.15 μ m carborundum on n type resilient coating, and adopt ion to inject carrying out highly doped to this zone is 1x10 to form doping content
19Cm
-3Ohmic contact 4 is shown in Fig. 5 d;
E step, under 1100 ± 50 ℃ of temperature, the substrate that step D is delayed outward carries out two hours dry-oxygen oxidation, forms SiO
2Passivation layer is shown in Fig. 5 e;
The F step is at SiO
2Two side areas adopts wet etching to fall surperficial SiO on the passivation layer
2Form source-drain area, the metal ohmic contact that deposited by electron beam evaporation Ni leaks as the source at this source-drain area, short annealing 10min under the high temperature of 1000 ℃ of nitrogen atmospheres, forming thickness is 0.2 μ m metal ohmic contact source-drain electrode, shown in Fig. 2 f;
In the G step, adopt wet etching to go out the area of grid of irradiation detector at the passivation layer zone line.Selecting concentration for use is 5% buffered HF acid corrosion 10 seconds, at SiO
2Passivation layer 3 zone lines are etched to n type buffer-layer surface.And the zone beyond the source metal drain electrode 2 carried out dry-oxygen oxidation, form one deck SiO
2Cover layer, shown in Fig. 2 g;
In the H step, the zone line at distance source electrode 0.4 μ m and distance drain electrode 0.8 μ m adopts wet etching to fall the SiO on surface
2And continue to be etched to the n type resilient coating 5 of the 0.08 μ m degree of depth downwards, on the resilient coating 5 that etches, adopt the translucent high barrier schottky metal A u of electron beam evaporation deposition thickness 100nm again, short annealing 10min forms schottky metal grid 1 under the high temperature of 1000 ℃ of nitrogen atmospheres, shown in Fig. 2 h.
Claims (3)
1. β irradiation detector based on the silicon carbide metal-semiconductor field effect tubular construction, comprise the ohmic contact layer (4) that n type substrate (8), p type resilient coating (7), n type raceway groove (6), n type resilient coating (5) and both sides n+ mix from bottom to top, be deposited with metal Ni on this ohmic contact layer as source-drain electrode (2), the n type resilient coating translucent schottky contact layer of zone line deposit (1), and imbed in the n type resilient coating (5), this schottky contact layer is made of high barrier schottky metal A u/Ti/Pt, and the surf zone beyond grid and the source-drain electrode is coated with one deck SiO
2Passivation layer (3), the concentration that it is characterized in that n type raceway groove is 3.5～4 * 10
17Cm
-3, the degree of depth that schottky contact layer (1) is imbedded n type resilient coating (5) is 0.06～0.08 μ m.
2. β irradiation detector according to claim 1 is characterized in that it is schottky metal Ti or Pt or the Au of 100nm that schottky contact layer (1) adopts thickness.
3. the manufacture method based on the β irradiation detector of silicon carbide metal-semiconductor field effect tubular construction comprises the steps:
1) going up extension one layer thickness at n type 4H-SiC substrate (8) is 0.15 μ m, and doping content is 1.4 * 10
15Cm
-3P type epitaxial loayer (7);
2) going up extension one layer thickness at p type resilient coating (7) is 0.26 μ m, and doping content is 3.5～4 * 10
17Cm
-3N type raceway groove (6);
3) going up extension one layer thickness at n raceway groove (6) is 0.1 μ m, and doping content is 1.7 * 10
17Cm
-3N type resilient coating (5);
4) going up extension one layer thickness at n type resilient coating (5) is 0.15 μ m, and doping content is 1 * 10
19Cm
-3Source-drain layer (4);
5) dry-oxygen oxidation on the epitaxial loayer in source-drain layer (4) forms SiO
2Passivation layer (3);
6) adopt wet etching SiO
2The SiO on two side areas surface on the passivation layer
2Form source-drain area, deposited by electron beam evaporation Ni, forming thickness at this source-drain area is 0.2 μ m metal ohmic contact source-drain electrode (2);
7) adopt wet etching passivation layer zone line, vertically be etched to n type buffer-layer surface, form the area of grid of irradiation detector, the surf zone beyond the source metal drain electrode carries out dry-oxygen oxidation and forms one deck SiO
2Cover layer;
8), adopt wet etching to fall this surperficial SiO at the zone line of distance drain electrode 0.8 μ m and source electrode 0.4 μ m
2And continue to be etched to the n type resilient coating (5) of 0.06～0.08 μ m degree of depth downwards, adopt the electron beam evaporation translucent high barrier schottky metal Ti of deposition thickness 100nm or metal Pt or metal A u in resilient coating 5 zones that etch again, form schottky metal grid (1).
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| CN102664197A (en) * | 2012-06-05 | 2012-09-12 | 长安大学 | JFET (Junction Field Effect Transistor) and manufacturing method thereof, and micro inverter using JFET |
| CN102664197B (en) * | 2012-06-05 | 2014-08-06 | 长安大学 | JFET (Junction Field Effect Transistor) and manufacturing method thereof, and micro inverter using JFET |
| CN102931272A (en) * | 2012-11-23 | 2013-02-13 | 中国科学院微电子研究所 | Ultraviolet detector structure with gain and preparation method thereof |
| CN103594536B (en) * | 2013-11-20 | 2017-04-19 | 湖南共创光伏科技有限公司 | Multi-junction multi-lamination silicon-based thin-film solar cell and manufacturing technology thereof |
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| CN104867835A (en) * | 2015-05-05 | 2015-08-26 | 西安电子科技大学 | Preparation method for metal semiconductor field effect transistor with wide channel and deep recesses |
| CN104916706A (en) * | 2015-05-05 | 2015-09-16 | 西安电子科技大学 | Metal semiconductor field effect transistor with wide-channel deep sags |
| CN105161531A (en) * | 2015-08-26 | 2015-12-16 | 西安电子科技大学 | 4h-sic metal semiconductor field effect transistor and manufacturing method thereof |
| CN105738939A (en) * | 2016-04-01 | 2016-07-06 | 西安电子科技大学 | Beta irradiation scintillator detector based on silicon carbide PIN diode structure |
| CN105845746A (en) * | 2016-04-01 | 2016-08-10 | 西安电子科技大学 | Gamma irradiation scintillator detector based on silicon carbide PIN diode structure |
| CN105738939B (en) * | 2016-04-01 | 2019-03-08 | 西安电子科技大学 | β based on silicon carbide PIN diode structure irradiates scintillator detector |
| WO2021168693A1 (en) * | 2020-02-26 | 2021-09-02 | Shenzhen Xpectvision Technology Co., Ltd. | Radiation detector |
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| CN115407387A (en) * | 2022-08-19 | 2022-11-29 | 西北核技术研究所 | Silicon carbide self-powered semiconductor detector and neutron beam reflex angle monitoring device |
| CN115407387B (en) * | 2022-08-19 | 2024-08-16 | 西北核技术研究所 | Silicon carbide self-powered semiconductor detector and neutron beam dihedral angle monitoring device |
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