CN102064252A - LED (Light Emitting Diode) and manufacturing method thereof - Google Patents
LED (Light Emitting Diode) and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses an LED (Light Emitting Diode) and a manufacturing method thereof. The LED comprises a substrate, an n-type semiconductor layer, an active layer, a p-type semiconductor layer, a p-type buried electrode layer, an opening, a first electrode and a second electrode. The n-type semiconductor layer, the active layer and the p-type semiconductor layer are sequentially arranged on the substrate. The p-type buried electrode layer is formed in the p-type semiconductor layer. The opening extends into the n-type semiconductor layer in depth. The first electrode is formed in the opening, and the n-type semiconductor layer is electrically connected with the negative electrode of a power source by the first electrode. The second electrode is formed on the p-type semiconductor layer, and the p-type semiconductor layer is electrically connected with the positive electrode of the power source by the p-type buried electrode layer. The p-type buried electrode layer can increase the hole concentration contributing to light emission so as to improve the light emitting efficiency of the LED.
Description
Technical field
The present invention relates to the semiconductor light emitting field, particularly relate to a kind of light-emitting diode and manufacture method thereof.
Background technology
Light-emitting diode (LED, Light Emitting Diode) is applied to various fields owing to have long, advantage such as power consumption is low of life-span, especially day by day significantly improves along with its illumination performance index, and LED is commonly used for light-emitting device at lighting field.Wherein, be the III-V compounds of group of representative with gallium nitride (GaN) because have that band gap is wide, luminous efficiency is high, characteristics such as electronics saturation drift velocity height, chemical property are stable, in field of optoelectronic devices such as high brightness blue light-emitting diode, blue lasers huge application potential is arranged, caused people's extensive concern.
Specifically please refer to Fig. 1, it is the generalized section of the light-emitting diode of prior art.As shown in Figure 1, existing a kind of light-emitting diode comprises: substrate 100; Be positioned at resilient coating 110, n type semiconductor layer 120, active layer 130, p type semiconductor layer 140 on the substrate 100 successively; And first electrode 150 and second electrode 160.Wherein, the material of described resilient coating 110 gallium nitride of low-temperature epitaxy normally; The material of n type semiconductor layer 120 is the gallium nitride (n-GaN) of n type doping normally; Described active layer 130 generally includes multiple quantum well active layer, and the material of multiple quantum well active layer for example is indium gallium nitride (InGaN); The material of described p type semiconductor layer 140 is the gallium nitride (p-GaN) of p type doping normally, and normally magnesium-doped in gallium nitride (Mg) atom forms p-GaN.Described light-emitting diode is used for when luminous, with first electrode 150 be electrically connected to power cathode, second electrode 160 is electrically connected to positive source, because n type semiconductor layer 120 is opposite with the doping type of p type semiconductor layer 140, the gallium nitride that the n type mixes drives by external voltage and makes electron drift, the gallium nitride that the p type mixes drives by external voltage and makes hole drift, the combination again mutually in multiple quantum well active layer (being also referred to as active layer or luminescent layer) of described hole and electronics, thereby reverberation.
Yet there is following shortcoming in the light-emitting diode of prior art: background charge carrier (electronics) concentration of this light-emitting diode is too high, and p type doped level is lower, and then causes hole too low.Wherein, for n type doping aspect, the background charge carrier is relevant with n room, instead type Si, instead type O etc.; For p type doping aspect, the H compensation is subjected to main Mg, and it is semi-insulating that the GaN that mixes Mg is become.But because Mg has higher ionization energy (about 250meV), even through after low energy electron beam irradiation (LEEBI) or rapid thermal annealing (RTA) PROCESS FOR TREATMENT, part Mg can be activated, and hole concentration can reach 10
18/ cm
3, but still can not satisfy the device needs well.
How enhancing along with people's environmental protection and energy saving consciousness improves luminous contributive hole concentration, improves the performance of light-emitting diode, becomes those skilled in the art's problem demanding prompt solution.
Summary of the invention
The problem that the present invention solves provides a kind of light-emitting diode and manufacture method thereof, to improve the hole concentration to light-emitting diode.
For solving the problems of the technologies described above, the invention provides a kind of light-emitting diode, comprising: substrate; Be positioned at n type semiconductor layer, active layer and p type semiconductor layer on the described substrate successively; Be formed at the p type buried type electrode layer in the described p type semiconductor layer; The degree of depth extends to the opening of described n type semiconductor layer; Be formed at first electrode in the described opening, described n type semiconductor layer is electrically connected with power cathode by described first electrode; Be formed at second electrode on the described p type semiconductor layer, described p type semiconductor layer is electrically connected with positive source by the described p type buried type electrode layer and second electrode.
Optionally, in described light-emitting diode, also comprise the transparency conducting layer that is positioned on the described p type semiconductor layer, described second electrode is electrically connected with described p type buried type electrode layer by described transparency conducting layer.
Optionally, in described light-emitting diode, also comprise the resilient coating between described substrate and n type semiconductor layer.
Optionally, in described light-emitting diode, described substrate is Sapphire Substrate, silicon carbide substrates or gallium nitride substrate.
Optionally, in described light-emitting diode, the gallium nitride that the material of described n type semiconductor layer mixes for the n type; Described active layer comprises multiple quantum well active layer, and the material of described multiple quantum well active layer is the indium gallium nitride; The gallium nitride that the material of described p type semiconductor layer mixes for the p type.The material of described first electrode and second electrode is titanium-aluminium alloy or titanium alloy.
Accordingly, the present invention also provides a kind of method for manufacturing light-emitting, comprising: substrate is provided; On described substrate, form n type semiconductor layer, active layer and p type semiconductor layer successively; In described p type semiconductor layer, form p type buried type electrode layer; Form the opening that the degree of depth extends to described n type semiconductor layer; In described opening, form first electrode, and on described p type semiconductor layer, form second electrode, described n type semiconductor layer is electrically connected with power cathode by described first electrode, and described p type semiconductor layer is electrically connected with positive source by the described p type buried type electrode layer and second electrode.
Optionally, in described method for manufacturing light-emitting, the step that forms p type buried type electrode layer in described p type semiconductor layer comprises: form the pattern mask layer on described p type semiconductor layer; With described pattern mask layer is mask, carries out ion implantation technology, to form ion implanted region in described p type semiconductor layer; Remove described pattern mask layer; Carry out annealing process, described ion implanted region is changed into p type buried type electrode layer.
Optionally, in described method for manufacturing light-emitting, the ion that described ion implantation technology is injected is beryllium ion, zinc ion or magnesium ion, and the injection energy is 500eV～10KeV, and implantation dosage is 10
14/ cm
2～10
16/ cm
2The annealing temperature of described annealing process is 800 ℃～1200 ℃, and annealing time is 1 second～200 seconds.
Optionally, in described method for manufacturing light-emitting, before the formation degree of depth extended to the opening of described n type semiconductor layer, also comprise: form transparency conducting layer on described p type semiconductor layer, described second electrode was electrically connected with p type buried type electrode layer by described transparency conducting layer.
Optionally, in described method for manufacturing light-emitting, before forming the n type semiconductor layer on the described substrate, also comprise: on described substrate, form resilient coating.
Compared with prior art, the present invention has the following advantages: the present invention is after forming the p type semiconductor layer, in the p type semiconductor layer, additionally formed p type buried type electrode layer, when lumination of light emitting diode, described p type buried type electrode layer can promote luminous contributive hole concentration, and then improves the luminous efficiency of light-emitting diode.
Description of drawings
Fig. 1 is the generalized section of the light-emitting diode of prior art;
Fig. 2 is the vertical view of the light-emitting diode that provides of the embodiment of the invention;
Fig. 3 is the generalized section of light-emitting diode shown in Figure 2 along the A-A direction;
The flow chart of the method for manufacturing light-emitting that Fig. 4 provides for the embodiment of the invention;
The generalized section of each step corresponding construction of the method for manufacturing light-emitting that Fig. 5 A～5E provides for the embodiment of the invention.
Embodiment
Mention that in background technology the major obstacle of existing light-emitting diode development is that background charge carrier (electronics) concentration of this light-emitting diode is too high, and p type doped level is lower, and then causes hole too low.Therefore, the invention provides a kind of light-emitting diode and manufacture method thereof, described light-emitting diode has additionally formed p type buried type electrode layer in the p type semiconductor layer, when lumination of light emitting diode, described p type buried type electrode layer can promote luminous contributive hole concentration, and then improves the luminous efficiency of light-emitting diode.
Please refer to Fig. 2 and Fig. 3, wherein, Fig. 2 is the vertical view of the light-emitting diode that provides of the embodiment of the invention, and Fig. 3 is the generalized section of light-emitting diode shown in Figure 2 along the A-A direction.Described light-emitting diode is gallium nitrate based blue light diode, and described light-emitting diode comprises:
N type semiconductor layer 220, active layer 230, p type semiconductor layer 240 are positioned at resilient coating 210 tops successively.In the present embodiment, the material of described n type semiconductor layer 220 is the gallium nitride (n-GaN) of n type doping; Described active layer 230 comprises multiple quantum well active layer, and the material of described multiple quantum well active layer is indium gallium nitride (InGaN), is used to send the blue light that wavelength is 470nm; The gallium nitride (p-GaN) that the material of described p type semiconductor layer 240 mixes for the p type.
Described light-emitting diode also comprises the p type buried type electrode layer 270 that is formed in the p type semiconductor layer 240, and described p type buried type electrode layer 270 can make light-emitting diode have higher hole concentration, and then improves the luminous efficiency of light-emitting diode.The p type dopant that mixed in the described p type buried type electrode layer 270, described p type dopant is preferably beryllium (Be), zinc (Zn) or magnesium (Mg).
As shown in Figure 2, in the present embodiment, described p type buried type electrode layer 270 comprises: spaced first arcuate limb 271, the first rectangle branch 272, the second rectangle branch 273 and the 4th arcuate limb 274; With the 3rd rectangle branch 275 connected vertically of above-mentioned four branches; And the semicircle branch 276 that is connected with the 3rd rectangle branch 275, described second electrode 260 be positioned at described semicircle branch 276 directly over.P type buried type electrode layer 270 is set to above-mentioned shape, can makes more even that the hole concentration of light-emitting diode distributes.Be understandable that, the shape of p type buried type electrode layer 270 is not limited thereto, as long as described p type buried type electrode layer 270 is evenly distributed in the p type semiconductor layer 240, reaching the purpose that the hole concentration that makes light-emitting diode is evenly distributed gets final product, for example, described p type buried type electrode layer 270 also can be the broach shape.
Preferable, described light-emitting diode also comprises transparency conducting layer (TCL) 280, described transparency conducting layer 280 is positioned at described p type semiconductor layer 240 and p type buried type electrode layer 270 tops.Because the conductivity of the gallium nitride that the p type mixes is smaller, therefore, help to improve conductivity at the current-diffusion layer of p type semiconductor layer 240 surface deposition layer of metal.The material of described transparency conducting layer 280 is preferably nickel billon (Ni/Au), or a kind of or its combination in the tin indium oxide (ITO), zinc oxide (ZnO), nickel oxide (NiO).
Described light-emitting diode comprises that also the degree of depth extends to the opening 221 of n type semiconductor layer 220, is formed at first electrode 250 in the opening 221 and is formed at second electrode 260 on the p type semiconductor layer 240.Wherein, described n type semiconductor layer 220 is electrically connected with power cathode by first electrode 250, and described p type semiconductor layer 240 is electrically connected with positive source by the p type buried type electrode layer 270 and second electrode 260.Preferably, first electrode 250 and second electrode 260 form in a step process simultaneously, and its material is titanium-aluminium alloy (Ti/Al) or titanium alloy (Ti/Au).
Described light-emitting diode is used for when luminous, first electrode 250 is electrically connected to power cathode, and second electrode 260 is electrically connected to positive source, make described n type semiconductor layer 220 link to each other with power cathode by first electrode 250, described p type semiconductor layer 240 and p type buried type electrode layer 270 link to each other with positive source by second electrode 260, n type semiconductor layer 220 drives by external voltage and makes electron drift, p type semiconductor layer 240 and p type buried type electrode layer 270 drive by external voltage and make hole drift, described p type buried type electrode layer 270 has increased luminous contributive hole concentration, thereby increased hole and the electronics mutual probability of combination again in multiple quantum well active layer (being also referred to as active layer or luminescent layer), improved the luminous efficiency of light-emitting diode.
Accordingly, the present invention also provides a kind of method for manufacturing light-emitting.Please refer to Fig. 4, it is the flow chart of the light-emitting diode that the embodiment of the invention provided, and this method may further comprise the steps:
Step S410 provides substrate;
Step S420 forms n type semiconductor layer, active layer and p type semiconductor layer successively on described substrate;
Step S430 forms p type buried type electrode layer in described p type semiconductor layer;
Step S440 forms the opening that the degree of depth extends to described n type semiconductor layer;
Step S450, in described opening, form first electrode, and on described p type semiconductor layer, form second electrode, described n type semiconductor layer is electrically connected with power cathode by described first electrode, and described p type semiconductor layer is electrically connected with positive source by the described p type buried type electrode layer and second electrode.
Below in conjunction with generalized section method for manufacturing light-emitting of the present invention is described in more detail, the preferred embodiments of the present invention have wherein been represented, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
With reference to figure 5A, at first, provide substrate 500, in the present embodiment, the material of described substrate 500 is aluminium oxide (Al
2O
3), described substrate 500 is in order to form gallium nitrate based blue light diode.Certainly, the material of described substrate 500 can also be a kind of or its combination in any in carborundum (SiC), gallium nitride (GaN), zinc oxide (ZnO) or the magnesium oxide (MgO).
Continue next, to utilize metal organic chemical vapor deposition (MOCVD) technology with reference to figure 5A, form resilient coating 510 on described substrate 500, described resilient coating 510 can improve the problem of the lattice constant mismatch between substrate 500 and the gallium nitride material.
Continue afterwards, to form n type semiconductor layer 520, active layer 530 and p type semiconductor layer 540 successively on described resilient coating 510 with reference to figure 5A, described n type semiconductor layer 520, active layer 530 and p type semiconductor layer 540 constitute the tube core of light-emitting diode.The gallium nitride that the material of described n type semiconductor layer 520 mixes for the n type; Described active layer 530 comprises multiple quantum well active layer, and the material of described multiple quantum well active layer is the indium gallium nitride; The gallium nitride that the material of described p type semiconductor layer 540 mixes for the p type.
With reference to figure 5B, committed step of the present invention is to form p type buried type electrode layer 570 in described p type semiconductor layer 540, to increase the hole concentration of light-emitting diode.
Wherein, described p type buried type electrode layer 570 can form by following steps: at first, on p type semiconductor layer 540, form the pattern mask layer, described pattern mask layer for example is patterned photoresist layer or patterned silicon dioxide layer, and described pattern mask layer comes out the zone that needs carry out the ion injection; Then, be mask with described pattern mask layer, carry out ion implantation technology, can in the unlapped p type semiconductor layer of described pattern mask layer, form ion implanted region, have the higher p type ion of concentration in the described ion implanted region; Subsequently, utilize the mode of wet method or dry method to remove described pattern mask layer; At last, carry out annealing process, to activate the p type ion in the described ion implanted region, thereby form p type buried type electrode layer, described p type buried type electrode layer 570 has higher hole concentration than p type semiconductor layer 540, has improved the luminous efficiency of light-emitting diode greatly.
In the present embodiment, the ion that described ion implantation technology is injected can be beryllium (Be) ion, zinc (Zn) ion or magnesium (Mg) ion, and the injection energy is 500eV～10KeV, and implantation dosage is 10
14/ cm
2～10
16/ cm
2The annealing temperature of annealing process is 800 ℃～1200 ℃, and annealing time is 1 second～200 seconds.Need to prove that the present invention is not limited to above-mentioned numerical value, also can adjust and inject energy and implantation dosage, and adjust annealing temperature and annealing time accordingly, control the injection degree of depth and the hole concentration that will reach according to the requirement of device.
And, in other embodiment of the present invention, also can utilize alternate manner (as the low energy electron beam irradiation mode) to come p type ion in the active ions injection region, thereby make light-emitting diode have higher hole concentration.
With reference to figure 5C, form p type buried type electrode layer 570 after, on p type semiconductor layer 540 form transparency conducting layer 580 thereafter,, described transparency conducting layer 580 helps to improve conductivity, and the material of described transparency conducting layer 580 can adopt nickel billon (Ni/Au).
With reference to figure 5D, next, utilize exposure, development and lithographic technique, form the opening 521 that the degree of depth extends to described n type semiconductor layer 520.In the present embodiment, described opening 521 runs through the n type semiconductor layer 520 of described transparency conducting layer 580, p type semiconductor layer 540, active layer 530 and segment thickness.Be understandable that described opening 521 also can only run through described transparency conducting layer 580, p type semiconductor layer 540 and active layer 530, can reach the purpose that n type semiconductor layer 520 is electrically connected with first electrode 550 equally.
With reference to figure 5E, in described opening 521, form first electrode 550, and on transparency conducting layer 580, form second electrode 560, described n type semiconductor layer 520 is electrically connected with power cathode by described first electrode 550, and described p type semiconductor layer 540 is electrically connected with positive source by the described p type buried type electrode layer 570 and second electrode 560.Preferably, described first electrode 550 and second electrode 560 form in a step process simultaneously, to enhance productivity.
Described light-emitting diode is used for when luminous, and described n type semiconductor layer 520 links to each other with power cathode by first electrode 550, and described p type semiconductor layer 540 and p type buried type electrode layer 570 link to each other with positive source by second electrode 560.N type semiconductor layer 520 drives by external voltage and makes electron drift, and p type semiconductor layer 540 and p type buried type electrode layer 570 drive by external voltage and make hole drift.Because the existence of described p type buried type electrode layer 570, increased luminous contributive hole concentration, thereby increased hole and the electronics mutual probability of combination again in multiple quantum well active layer, improved the luminous efficiency of light-emitting diode, and then improved the performance of light-emitting diode.
Need to prove, the foregoing description is an example with the blue LED, but the present invention is not restricted to this, and the foregoing description can also be red light emitting diodes, yellow light-emitting diode, those skilled in the art can make amendment, replace and be out of shape the present invention according to the foregoing description.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (12)
1. light-emitting diode comprises:
Substrate;
Be positioned at n type semiconductor layer, active layer and p type semiconductor layer on the described substrate successively;
Be formed at the p type buried type electrode layer in the described p type semiconductor layer;
The degree of depth extends to the opening of described n type semiconductor layer;
Be formed at first electrode in the described opening, described n type semiconductor layer is electrically connected with power cathode by described first electrode;
Be formed at second electrode on the described p type semiconductor layer, described p type semiconductor layer is electrically connected with positive source by the described p type buried type electrode layer and second electrode.
2. light-emitting diode as claimed in claim 1 is characterized in that, described light-emitting diode also comprises the transparency conducting layer that is positioned on the described p type semiconductor layer, and described second electrode is electrically connected with described p type buried type electrode layer by described transparency conducting layer.
3. light-emitting diode as claimed in claim 1 is characterized in that, described light-emitting diode also comprises the resilient coating between described substrate and n type semiconductor layer.
4. light-emitting diode as claimed in claim 1 is characterized in that, described substrate is Sapphire Substrate, silicon carbide substrates or gallium nitride substrate.
5. as each described light-emitting diode in the claim 1 to 4, it is characterized in that the gallium nitride that the material of described n type semiconductor layer mixes for the n type; Described active layer comprises multiple quantum well active layer, and the material of described multiple quantum well active layer is the indium gallium nitride; The gallium nitride that the material of described p type semiconductor layer mixes for the p type.
6. light-emitting diode as claimed in claim 1 is characterized in that, the material of described first electrode and second electrode is titanium-aluminium alloy or titanium alloy.
7. method for manufacturing light-emitting comprises:
Substrate is provided;
On described substrate, form n type semiconductor layer, active layer and p type semiconductor layer successively;
In described p type semiconductor layer, form p type buried type electrode layer;
Form the opening that the degree of depth extends to described n type semiconductor layer;
In described opening, form first electrode, and on described p type semiconductor layer, form second electrode, described n type semiconductor layer is electrically connected with power cathode by described first electrode, and described p type semiconductor layer is electrically connected with positive source by the described p type buried type electrode layer and second electrode.
8. method for manufacturing light-emitting as claimed in claim 7 is characterized in that, the step that forms p type buried type electrode layer in described p type semiconductor layer comprises:
On described p type semiconductor layer, form the pattern mask layer;
With described pattern mask layer is mask, carries out ion implantation technology, to form ion implanted region in described p type semiconductor layer;
Remove described pattern mask layer;
Carry out annealing process, described ion implanted region is changed into p type buried type electrode layer.
9. method for manufacturing light-emitting as claimed in claim 8 is characterized in that, the ion that described ion implantation technology is injected is beryllium ion, zinc ion or magnesium ion, and the injection energy is 500eV～10KeV, and implantation dosage is 10
14/ cm
2～10
16/ cm
2
10. method for manufacturing light-emitting as claimed in claim 9 is characterized in that, the annealing temperature of described annealing process is 800 ℃～1200 ℃, and annealing time is 1 second～200 seconds.
11. as claim 8 or 10 described method for manufacturing light-emitting, it is characterized in that, before the formation degree of depth extends to the opening of described n type semiconductor layer, also comprise: form transparency conducting layer on described p type semiconductor layer, described second electrode is electrically connected with p type buried type electrode layer by described transparency conducting layer.
12. as claim 8 or 10 described method for manufacturing light-emitting, it is characterized in that, before forming the n type semiconductor layer on the described substrate, also comprise: on described substrate, form resilient coating.
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| CN 201010559789 CN102064252A (en) | 2010-11-24 | 2010-11-24 | LED (Light Emitting Diode) and manufacturing method thereof |
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|---|---|---|---|
| CN 201010559789 CN102064252A (en) | 2010-11-24 | 2010-11-24 | LED (Light Emitting Diode) and manufacturing method thereof |
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| WO2013159485A1 (en) * | 2012-04-27 | 2013-10-31 | 杭州士兰明芯科技有限公司 | Semiconductor light emitting diode device and formation method thereof |
| CN104350616A (en) * | 2012-06-08 | 2015-02-11 | Lg伊诺特有限公司 | Light-emitting device, light-emitting device package, and light unit |
| CN104380487A (en) * | 2012-06-08 | 2015-02-25 | Lg伊诺特有限公司 | Light-emitting element |
| CN107180895A (en) * | 2016-03-10 | 2017-09-19 | 三星电子株式会社 | Luminescent device and its manufacture method |
| CN109888074A (en) * | 2019-01-31 | 2019-06-14 | 华灿光电（浙江）有限公司 | Light-emitting diode chip for backlight unit and preparation method thereof |
| CN113964251A (en) * | 2016-01-13 | 2022-01-21 | 首尔伟傲世有限公司 | Light emitting element |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2013159485A1 (en) * | 2012-04-27 | 2013-10-31 | 杭州士兰明芯科技有限公司 | Semiconductor light emitting diode device and formation method thereof |
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| CN104380487B (en) * | 2012-06-08 | 2018-02-16 | Lg伊诺特有限公司 | Light-emitting component |
| CN113964251A (en) * | 2016-01-13 | 2022-01-21 | 首尔伟傲世有限公司 | Light emitting element |
| CN107180895A (en) * | 2016-03-10 | 2017-09-19 | 三星电子株式会社 | Luminescent device and its manufacture method |
| CN107180895B (en) * | 2016-03-10 | 2021-08-03 | 三星电子株式会社 | Light emitting device and method of manufacturing the same |
| CN109888074A (en) * | 2019-01-31 | 2019-06-14 | 华灿光电（浙江）有限公司 | Light-emitting diode chip for backlight unit and preparation method thereof |
| CN109888074B (en) * | 2019-01-31 | 2020-07-07 | 华灿光电（浙江）有限公司 | Light emitting diode chip and preparation method thereof |
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Application publication date: 20110518 |