CN102055167A - Over-temperature protection circuit capable of resisting process deviation influence - Google Patents
Over-temperature protection circuit capable of resisting process deviation influence Download PDFInfo
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- CN102055167A CN102055167A CN2009102367175A CN200910236717A CN102055167A CN 102055167 A CN102055167 A CN 102055167A CN 2009102367175 A CN2009102367175 A CN 2009102367175A CN 200910236717 A CN200910236717 A CN 200910236717A CN 102055167 A CN102055167 A CN 102055167A
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- 238000007493 shaping process Methods 0.000 claims abstract description 19
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Abstract
The invention discloses an over-temperature protection circuit for resisting process deviation, which comprises a reference voltage input buffer stage, a resistance voltage division array, a negative temperature coefficient voltage branch circuit, a comparator and an output shaping circuit, wherein input reference voltage is buffered by the reference voltage input buffer stage to be reference voltage which is not influenced by a load, then the reference voltage is divided by the resistance voltage division array to generate temperature setting voltage and output the temperature setting voltage to the comparator, the temperature setting voltage is compared with the voltage generated by the negative temperature coefficient voltage branch circuit in the comparator, and a control signal is generated and output by the output shaping circuit in a shaping mode. The over-temperature protection circuit capable of resisting the process deviation influence can overcome the influence of the process deviation in the manufacturing process of an integrated circuit, and accurately generates an action signal at a preset temperature point so as to control the protected circuit or an auxiliary circuit thereof to be switched off, thereby realizing the over-temperature protection of the circuit.
Description
Technical field
The present invention relates to a kind of thermal-shutdown circuit, specifically, relate in the analog integrated circuit overheat protector protective circuit that can carry out temperature detection and when working temperature is too high, protect circuit.
Background technology
It is too high that some integrated circuit (IC) products such as power supply, driving element etc. often will face working temperature, and caloric value is excessive, causes circuit cisco unity malfunction even permanent problem of burning, and this just need be integrated in thermal-shutdown circuit in the circuit.The effect of thermal-shutdown circuit is, the circuit working temperature is monitored, and reaches set point in the integrated circuit working temperature and exports control signal later on, finishes functions such as breaking circuit, power cutoff, plays the purpose of protective circuit.
The programme of work of tradition thermal-shutdown circuit as shown in Figure 1.Current source 12 driving resistor R11 produce temperature and set current potential at node 102 places; The triode Q11 that connects into the diode type of attachment produces the output potential with negative temperature coefficient at node 101, that is: along with the rising of temperature, node 101 output potentials can reduce gradually.Along with near the change of temperature heat is turn-offed threshold temperature point, the current potential of node 101 can change to opposite side from the side that node 102 is set the value of current potential, causes the upset of comparator output level.At digital controlled signal of node 104 outputs, offer the circuit that needs protection after these upset process shaping circuit 14 shapings,, prevent that it from burning because of overheated its shutoff.
The defective of traditional scheme is, is difficult to realize the resistance of high precision high resistance in the integrated circuit technology.High-precision resistance need take sizable chip area; And adopt low resistance resistance, in order to reach required setting voltage, will increase the electric current that flows through it, thereby circuit power consumption is increased.In traditional thermal-shutdown circuit, in order to take into account area and power consumption, regular meeting uses bigger polycrystalline resistance or the trap resistance of square resistance, and this just means that under relatively poor situation the resistance deviation of R11 can reach 10～20%.Under these circumstances; the current potential of the node of being set by R11 and current source 12 102 also has very big deviation; cause protective circuit not export control signal at the temperature spot of design; and might appear at very high temperature and could move; the perhaps situation of action in advance under the normal working temperature, thus the protective capability of expection lost.
Summary of the invention
(1) technical problem that will solve
In order to address the above problem, the skew that the heat that the elimination process deviation causes is turn-offed threshold temperature point the present invention proposes the thermal-shutdown circuit that a kind of anti-process deviation influences.
(2) technical scheme
The technical solution adopted for the present invention to solve the technical problems is:
A kind of thermal-shutdown circuit of anti-process deviation; this circuit comprises reference voltage input buffering level, electric resistance partial pressure array, negative temperature coefficient voltage branch road, comparator and output Shaping circuit; input reference voltage becomes the reference voltage that is not subjected to load effect through this reference voltage input buffering level buffering; produce the temperature setting voltage and export to comparator through this electric resistance partial pressure array dividing potential drop then; the voltage that produces with negative temperature coefficient voltage branch road in comparator compares, and produces a control signal through this output Shaping circuit shaping output.
In the such scheme, described reference voltage input buffering level matches with the electric resistance partial pressure array, and input reference voltage dividing potential drop to produce the temperature setting voltage, is turn-offed threshold temperature thereby set heat.
In the such scheme, described reference voltage input buffering level comprises differential amplifier, is connected into the NMOS pipe of source follower, and the PMOS pipe that operating current is provided for NMOS pipe branch road.
In the such scheme, described electric resistance partial pressure array is two or the two groups same quasi-resistances that are cascaded, and the voltage that the junction produces is exported to subordinate's circuit as the result of dividing potential drop.
In the such scheme, described comparator is a differential amplifier.
In the such scheme, described negative temperature coefficient voltage props up route one negative temperature device and a current source constitutes, and negative temperature device and current source are connected in series.
In the such scheme, described output Shaping circuit is made of the inverter of two series connection.
(3) beneficial effect
The thermal-shutdown circuit of this anti-process deviation influence provided by the invention; can overcome the influence of process deviation in the ic manufacturing process; produce control signal at default temperature spot exactly, turn-off, realize overheat protector circuit to control protected circuit or its auxiliary circuit.
Description of drawings
Fig. 1 is traditional thermal-shutdown circuit schematic diagram;
Fig. 2 is the described thermal-shutdown circuit schematic diagram of the embodiment of the invention;
Fig. 3 is the circuit theory diagrams of the described input buffer of the embodiment of the invention;
Fig. 4 is the circuit theory diagrams of the described negative temperature coefficient voltage of embodiment of the invention branch road;
Fig. 5 is the simulation curve figure under three kinds of process corner of traditional thermal-shutdown circuit;
Fig. 6 is the simulation curve figure of the described thermal-shutdown circuit of the embodiment of the invention under three kinds of process corner.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
In the integrated circuit fabrication process, resistance is difficult to accurate realization, and can accurately realize with the resistance ratio of quasi-resistance.Utilize this characteristics, the technical program replaces the method that original resistance and current value multiply each other to produce setting voltage with the method for electric resistance partial pressure array dividing potential drop reference voltage, thereby obtains more traditional thermal-shutdown circuit heat shutoff more accurately threshold temperature point.
Specifically, exactly an accurate reference voltage is introduced circuit by buffer, offer the electric resistance partial pressure array, produce the setting voltage that is used to set the protection temperature through dividing potential drop.This setting voltage and the temperature sampling voltage with the temperature monotone variation are compared, along with variation of temperature, the value of temperature sampling voltage can change to opposite side from a side of setting voltage again.This has also just caused the upset of comparator output level, and by the shaping of output Shaping circuit, the output signal of generation has been controlled external circuit and entered protected state or remove protected state again.
What need emphatically point out is, in the analog integrated circuit, accurate reference voltage is usually from band gap reference, and directly will influence the output of band gap reference as the load of band gap reference with resistance.So used the input buffer of reference voltage among the present invention.Reference voltage becomes the burning voltage that is not subjected to load effect through the buffering of input buffer.In technical scheme of the present invention, this buffer is by one-level differential amplifier and the one-level source class follower unit's of being connected into negative feedback amplifier and constitute.
Fig. 2 has provided the circuit theory diagrams of thermal-shutdown circuit of the present invention.This circuit comprises reference voltage input buffering level, electric resistance partial pressure array, negative temperature coefficient voltage branch road, comparator and output Shaping circuit, input reference voltage becomes the reference voltage that is not subjected to load effect through this reference voltage input buffering level buffering, produce the temperature setting voltage and export to comparator through this electric resistance partial pressure array dividing potential drop then, the voltage that produces with negative temperature coefficient voltage branch road in comparator compares, and produces a control signal through this output Shaping circuit shaping output.
Voltage from voltage-reference (as band gap reference etc.) is imported into node 201 (Vin), becomes the reference voltage that is not subjected to the stable output that load variations influences and from node 202 outputs through the buffering of reference voltage input buffering level 21.Resistance R 21, the R22 dividing potential drop of the reference voltage of node 202 in electric resistance partial pressure array 22 produces the setting voltage that is used for initialization circuit heat shutoff threshold temperature at node 203, and its value is
This setting voltage is output an input to comparator 23.Another input node 204 of comparator 23 connects the output of negative temperature coefficient voltage branch road 24.Under the normal operating conditions, the setting voltage height of the voltage ratio node 203 of the output node 204 of negative temperature coefficient voltage branch road 24.Along with temperature raises, the output meeting of negative temperature coefficient voltage branch road reduces gradually, and when temperature is elevated to operating temperature when above, the voltage of node 204 is reduced to below 203 the setting voltage.At this moment, the output of comparator 23 (node 205) output level change (become high level or become low level by high level from low level, which receives the positive input terminal of comparator to depend on node 203 and node 204).The output Shaping circuit 25 that this level upset is formed via the two-stage inverter produces the control signal that is used to change the external circuit operating state at output node 206.
Fig. 3 has provided the circuit theory diagrams of input buffering level among the present invention.The grid of the output of differential amplifier 31 and NMOS pipe N1 links to each other, and N1 is connected into source follower, together the be linked back inverting input component unit negative feedback loop of differential amplifier of its source S and substrate B (node 202).This structure makes the current potential of input (also be the input of whole buffer simultaneously) node 201 of output potential with the differential amplifier of node 202 identical, and is not subjected to the influence of load resistance.The P1 pipe provides electric current for this branch road, realizes automatic biasing by node 302.It is pointed out that in some integrated circuit fabrication process that all NMOS pipes all are fabricated in the common trap, such technology is to realize the connection of above-mentioned input buffering level.In other words, only under those allowed the NMOS pipe is produced on manufacturing process in the independent trap, technical scheme proposed by the invention can be implemented.This point believes that those skilled in the art holds understanding very much.
Fig. 4 has provided the circuit theory diagrams of negative temperature coefficient voltage branch road.This route connects into the NPN triode Q41 of diode form and forms for it provides current source biasing 41.Diode operation is at anti-state partially, and the pressure drop at its two ends reduces with the rising of temperature.Therefore, circuit has negative temperature characteristic at the output potential of node 204.
Fig. 5 is the temperature variant curve chart of the output of traditional thermal-shutdown circuit.Be followed successively by the simulation curve of this circuit under fast angle, typical angular and slow three kinds of different process angles, angle from left to right, it a little is the some heat shutoff just threshold temperature point of circuit output level upset that order of a curve jumps.Owing to the significant errors of resistance value under the different process corner, caused the substantial deviation of hot shutoff threshold temperature.Especially under the situation of fast angle, this temperature has been offset near 0 ℃ from 100 ℃ of setting, and not only can not play the effect of protective circuit, also will have a strong impact on the operate as normal of protected circuit.And Fig. 6 is according to the designed temperature variant output curve diagram of a thermal-shutdown circuit of the embodiment of the invention.Be followed successively by its simulation curve under fast angle, three kinds of process corner of typical angular and slow angle from left to right.Though the operating temperature of circuit exists and departs under three kinds of process corner as can be seen, side-play amount is very little, is in fully on the engineering in the acceptable scope.
Contrast by Fig. 5 and Fig. 6; be not difficult to find out; really can overcome the skew of the operating temperature that process deviation causes in the integrated circuit fabrication process according to the thermal-shutdown circuit of technical scheme realization proposed by the invention; make thermal-shutdown circuit in the temperature spot output control signal of setting, protected circuit is protected.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. the thermal-shutdown circuit of an anti-process deviation; it is characterized in that; this circuit comprises reference voltage input buffering level, electric resistance partial pressure array, negative temperature coefficient voltage branch road, comparator and output Shaping circuit; input reference voltage becomes the reference voltage that is not subjected to load effect through this reference voltage input buffering level buffering; produce the temperature setting voltage and export to comparator through this electric resistance partial pressure array dividing potential drop then; the voltage that produces with negative temperature coefficient voltage branch road in comparator compares, and produces a control signal through this output Shaping circuit shaping output.
2. thermal-shutdown circuit according to claim 1 is characterized in that, described reference voltage input buffering level matches with the electric resistance partial pressure array, to input reference voltage dividing potential drop producing the temperature setting voltage, thereby set operating temperature.
3. thermal-shutdown circuit according to claim 1 is characterized in that, described reference voltage input buffering level comprises differential amplifier, is connected into the NMOS pipe of source follower, and the PMOS pipe that operating current is provided for NMOS pipe branch road.
4. thermal-shutdown circuit according to claim 1 is characterized in that, described electric resistance partial pressure array is two or the two groups same quasi-resistances that are cascaded, and the voltage that the junction produces is exported to subordinate's circuit as the result of dividing potential drop.
5. thermal-shutdown circuit according to claim 1 is characterized in that, described comparator is a differential amplifier.
6. thermal-shutdown circuit according to claim 1 is characterized in that, described negative temperature coefficient voltage props up route one negative temperature device and a current source constitutes, and negative temperature device and current source are connected in series.
7. thermal-shutdown circuit according to claim 1 is characterized in that, described output Shaping circuit is made of the inverter of two series connection.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009102367175A CN102055167A (en) | 2009-10-28 | 2009-10-28 | Over-temperature protection circuit capable of resisting process deviation influence |
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| CN2009102367175A CN102055167A (en) | 2009-10-28 | 2009-10-28 | Over-temperature protection circuit capable of resisting process deviation influence |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103840430A (en) * | 2012-11-22 | 2014-06-04 | 三星电机株式会社 | Overheating protection circuit |
| CN105676939A (en) * | 2016-03-25 | 2016-06-15 | 厦门新页微电子技术有限公司 | Adjustable precise over-temperature protection circuit applied to wireless charging control chip |
| CN104734676B (en) * | 2014-09-30 | 2017-09-19 | 记忆科技(深圳)有限公司 | A kind of adjustable comparator circuit of threshold values |
| CN108879605A (en) * | 2018-08-16 | 2018-11-23 | 厦门元顺微电子技术有限公司 | Thermal-shutdown circuit |
| CN109980599A (en) * | 2019-04-19 | 2019-07-05 | 中国电子科技集团公司第五十八研究所 | A kind of overheat protector structure suitable for stand CMOS |
| CN110365326A (en) * | 2019-08-05 | 2019-10-22 | 电子科技大学 | A kind of star Flouride-resistani acid phesphatase thermal-shutdown circuit |
| CN110501556A (en) * | 2019-08-27 | 2019-11-26 | 上海芯旺微电子技术有限公司 | A kind of Low Drift Temperature low-voltage testing circuit for MCU |
| CN110794911A (en) * | 2019-12-03 | 2020-02-14 | 苏州大学 | CMOS buffer for buffering voltage close to ground |
| EP3757980A4 (en) * | 2018-02-23 | 2021-11-24 | Boe Technology Group Co., Ltd. | Control circuit, light source driving device and display equipment |
| CN114123105A (en) * | 2021-11-19 | 2022-03-01 | 深圳市迪浦电子有限公司 | Over-temperature protection circuit and method for power management LDO system |
-
2009
- 2009-10-28 CN CN2009102367175A patent/CN102055167A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103840430A (en) * | 2012-11-22 | 2014-06-04 | 三星电机株式会社 | Overheating protection circuit |
| CN104734676B (en) * | 2014-09-30 | 2017-09-19 | 记忆科技(深圳)有限公司 | A kind of adjustable comparator circuit of threshold values |
| CN105676939A (en) * | 2016-03-25 | 2016-06-15 | 厦门新页微电子技术有限公司 | Adjustable precise over-temperature protection circuit applied to wireless charging control chip |
| EP3757980A4 (en) * | 2018-02-23 | 2021-11-24 | Boe Technology Group Co., Ltd. | Control circuit, light source driving device and display equipment |
| CN108879605A (en) * | 2018-08-16 | 2018-11-23 | 厦门元顺微电子技术有限公司 | Thermal-shutdown circuit |
| CN108879605B (en) * | 2018-08-16 | 2024-05-14 | 厦门元顺微电子技术有限公司 | Over-temperature protection circuit |
| CN109980599A (en) * | 2019-04-19 | 2019-07-05 | 中国电子科技集团公司第五十八研究所 | A kind of overheat protector structure suitable for stand CMOS |
| CN109980599B (en) * | 2019-04-19 | 2021-04-13 | 中国电子科技集团公司第五十八研究所 | Over-temperature protection structure suitable for conventional CMOS (complementary metal oxide semiconductor) process |
| CN110365326A (en) * | 2019-08-05 | 2019-10-22 | 电子科技大学 | A kind of star Flouride-resistani acid phesphatase thermal-shutdown circuit |
| CN110501556A (en) * | 2019-08-27 | 2019-11-26 | 上海芯旺微电子技术有限公司 | A kind of Low Drift Temperature low-voltage testing circuit for MCU |
| CN110501556B (en) * | 2019-08-27 | 2021-06-01 | 上海芯旺微电子技术有限公司 | Low-temperature drift low-voltage detection circuit for MCU |
| CN110794911A (en) * | 2019-12-03 | 2020-02-14 | 苏州大学 | CMOS buffer for buffering voltage close to ground |
| CN114123105A (en) * | 2021-11-19 | 2022-03-01 | 深圳市迪浦电子有限公司 | Over-temperature protection circuit and method for power management LDO system |
| CN114123105B (en) * | 2021-11-19 | 2023-07-04 | 深圳市迪浦电子有限公司 | Over-temperature protection circuit and method for power management LDO system |
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Application publication date: 20110511 |