CN102024656A - System and method for improving beam current intensity distribution after leading ion beam out - Google Patents
System and method for improving beam current intensity distribution after leading ion beam out Download PDFInfo
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- CN102024656A CN102024656A CN200910195845XA CN200910195845A CN102024656A CN 102024656 A CN102024656 A CN 102024656A CN 200910195845X A CN200910195845X A CN 200910195845XA CN 200910195845 A CN200910195845 A CN 200910195845A CN 102024656 A CN102024656 A CN 102024656A
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Abstract
The invention discloses a system and a method for improving beam current intensity distribution after leading an ion beam out. A positive bias current-conducting plate is added between the top part and the bottom part of a beam current path between a beam current leading-out system and a mass analysis magnet, wherein the positive bias current-conducting plate can generate an electric field so that part beam current is pressed to the middle part; a bias voltage can modulate beam current intensity to increase the beam current intensity, so that the beam current loss caused by the mass analysis magnet is compensated; and simultaneously, some nonlinear angle changes caused by the positive bias current-conducting plate is independently corrected by utilizing an angle controller. By using the system and the method, the beam current loss caused by an analysis magnet inlet can be reduced; high beam current transmission efficiency is achieved by greatly improving the beam current of an analysis magnet; and the density distribution of the beam current can be optimized more conveniently when the beam current uniformity distribution is adjusted.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of strong system and method that distributes of line stream that after ion beam is drawn, improves.
Background technology
Because the technology of the big semiconductor crystal wafer of the production of semiconductor product trend (from 8 inches to 12 inches, and now to 18 inches development), single-wafer technology (single treatment one wafer) is adopted recently widely.
It is a kind ofly to mix impurity in Semiconductor substrate that ion injects, with the electrical property that changes substrate and the technology of material properties.Several different round processes of doped single crystal have been had now.Wherein a kind of approach is at United States Patent (USP) 7,326, is disclosed in 941.As shown in Figure 1, ion implantation apparatus described in this patent comprises an ion source, one and draws the extraction system 101 ' of an ion beam, a mass analyzing magmet 102 ' and a line uniformity controller by the extraction system of dispersing, and this ion implantation apparatus also comprises a calibrator 103 '.Described extraction electrode has how much convex surfaces, thereby line is dispersed when leaving extraction electrode.The divergent state of ion beam is determined by the shape of extraction electrode, and line uniformity controller has high and narrow relatively cross section, and wherein, one side long on the cross section is the dispersionless plane of analyzing magnet.Along with the lasting propagation of line, to disperse when drawing owing to line, line can continue to uprise in transmission course, and when ion beam arrived target wafer, it highly was enough to cover the whole diameter of this wafer.Calibrator has stopped the divergent trend of line, and makes line become horizontal infection, the variation of control line implant angle on the injection face of target wafer.
The device that ion injects also comprises a cup type line current measure device of faraday that is arranged on the target wafer position, the cross-sectional direction long at ion beam scans, thereby measure line and inject relevant parameters, such as beam intensity and angular distribution, and measurement data fed back to line uniformity controller.
United States Patent (USP) 7,326 also discloses the system with two angle controllers in 941, and this system can solve the problem that non-linear angle changes.Angle controller is made up of several solenoids on the low-carbon (LC) rod iron.Quadripolar magnetic field can form in the gap between two coils on the rod.Each coil can be controlled separately, produces different quadrupole fields in the part, thereby changes the line angle at diverse location.But this United States Patent (USP) was not discussed the concrete application of system aspect the ion angle modification with two angle controllers.
Fig. 2 is the beam intensity distribution curve, because the plasma in ion source region and ion are drawn the complex interaction effect between the electric field, the import of the analyzed magnet of line at and two ends more smooth at the middle part usually along the beam intensity distribution curve of longer dimensional directions (vertical direction among Fig. 1) stops and sharply decline.In fact, the shoulder of the line of top and bottom (dotted line) is very long, and the middle part line is also smooth inadequately.On behalf of the import of analyzed magnet, dotted portion stop and by the line that lost.Distribute in order to obtain uniform beam intensity, make how much convex surfaces of extraction electrode more protruding, thereby more middle strand is drifted to the edge,
Cause more line that the inlet of analyzed magnet is stopped and lose, thereby make the line that can be transferred to wafer significantly reduce, this is for ion implantation process, can cause the processing procedure required time of same implantation dosage longer, the time efficiency for whole processing procedure is very disadvantageous like this.
Summary of the invention
A kind of strong system and method that distributes of line stream that after ion beam is drawn, improves provided by the invention, can reduce the beam loss that the analyzing magnet inlet is caused, line by analyzing magnet is promoted greatly, obtained higher beam transport efficient, when adjusting the distribution of the line uniformity, also can optimize the density distribution of line more easily.
In order to achieve the above object, the invention provides a kind of strong system that distributes of line stream that after ion beam is drawn, improves, comprise:
Ion source produces ion beam current;
The line extraction system, the ion beam current that obtains to disperse by the extraction electrode of dispersing;
Mass analyzing magmet is used to select the ion beam of institute's energy requirement with the ratio of quality;
Line uniformity controller is used to adjust line in density distribution longitudinally;
Calibrator stops the divergent trend of line, and makes line become horizontal infection, the implant angle of control line on wafer;
Be arranged on beam diagnostics equipment near the target wafer position, the long cross sectional dimensions that passes ion beam current scans, thereby measure line and inject relevant parameters (intensity of line and angular distribution), and measurement data is fed back to the beam current density controller;
The characteristics of this system are that the top and bottom in the line path between line extraction system and mass analyzing magmet adds the forward bias conduction plate; This forward bias conduction plate can produce electric field, makes the part line press to the middle part, and bias voltage can the modulator beam intensity of flow, thereby beam intensity is increased, and has compensated the beam loss that mass analyzing magmet causes.
Yet the positively biased pressing plate that added before mass analyzing magmet can cause some non-linear angles to change, and these angles change and can be revised separately by angle controller.
So, on the path of native system after ion beam current passes through mass analyzing magmet, need the angle control system to carry out angle modification, this angle control system comprises first angle controller and second angle controller, described line uniformity controller is as first angle controller, described calibrator is as second angle controller, each angle controller is made up of several solenoids on the low-carbon (LC) rod iron, after feeding electric current, quadripolar magnetic field can form in the gap between two coils on the rod, each coil can be controlled respectively, produces different quadrupole fields in the part, thereby changes the line angle at diverse location.
A kind of strong method that distributes of line stream of improving after ion beam is drawn comprises following steps:
Step 1, ion beam are drawn;
After ion source produces ion beam current, the ion beam current that obtains to disperse by the line extraction system of dispersing;
Step 2, positively biased pressing plate improve the strong distribution of line stream;
Between line extraction system and mass analyzing magmet, two forward bias conduction plates of line path top and bottom produce electric fields, make the part line at two ends press to the middle part, by regulating the size of bias voltage, control beam intensity;
Step 3, two angle controllers (line uniformity controller and calibrator) of adjusting in the angle control system are calibrated line angle and the distribution of control beam intensity;
The distribution of beam intensity can rely on independent adjustment first angle controller (line uniformity controller) or second angle controller (calibrator) to obtain, and perhaps adjusts two angle controllers simultaneously and obtains.
A kind of strong system and method that distributes of line stream that after ion beam is drawn, improves provided by the invention, can reduce the beam loss that the analyzing magnet inlet is caused, line by analyzing magnet is promoted greatly, obtained higher beam transport efficient, when adjusting the distribution of the line uniformity, also can optimize the density distribution of line more easily.
Description of drawings
Fig. 1 is the structural representation of background technology intermediate ion injection device;
Fig. 2 is the beam intensity distribution curve in the background technology;
Fig. 3 is a kind of structural representation that improves the strong system that distributes of line stream after ion beam is drawn provided by the invention;
Fig. 4 is the beam intensity distribution curve after improving through the present invention;
Fig. 5 has the line angle curve that non-linear angle changes;
Fig. 6 is a kind of structural representation that improves the angle control system in the strong system that distributes of line stream after ion beam is drawn provided by the invention;
Fig. 7 is the line angle curve after overregulating;
Fig. 8 is the line angle curve that finally obtains.
Embodiment
Following according to Fig. 3～Fig. 8, specify preferred embodiment of the present invention:
As shown in Figure 3, be a kind of strong system that distributes of line stream that after ion beam is drawn, improves, comprise:
Ion source produces ion beam current;
Calibrator 1032 stops the divergent trend of line, and makes line become horizontal infection, the implant angle of control line on wafer; In the present embodiment, calibrator 1032 can also be realized the function of second angle controller;
Be arranged on beam diagnostics equipment near the target wafer place, this beam diagnostics equipment is the cup type line current measure device of faraday, the long cross sectional dimensions that passes ion beam current scans, thereby measure line and inject relevant parameters (intensity of line and angular distribution), and measurement data is fed back to line uniformity controller;
The top and bottom in the line path of native system between line extraction system and mass analyzing magmet adds two forward bias conduction plates 104 and reduces the beam loss that mass analyzing magmet causes;
Among Fig. 3, dotted line is when not adding the positively biased pressing plate, the propagation trajectories of ion beam current, and solid line is after having added two positively biased pressing plates, the beam trace after being affected.This forward bias conduction plate 104 can produce electric field makes the line at two ends press to the middle part.Thereby the beam intensity in the region of interest (± 150mm, the wafer of covering 300mm diameter) is increased.The distribution results of its line curve as shown in Figure 4, solid line is that the situation of adding the forward bias conduction plate is arranged, dotted line is the situation that does not have the positively biased pressing plate.The use of plate bias voltage, sharpening the line edge distribution, thereby promoted the intensity at line middle part, so the line by analyzing magnet is promoted greatly, when obtaining higher beam transport efficient, also make the density distribution of optimizing line when the line uniformity distributes more easily adjusting.
As shown in Figure 6, native system is set up an angle control system at ion beam current on by the path after the mass analyzing magmet, this angle control system comprises first angle controller and second angle controller, described line uniformity controller 1031 is as first angle controller, described calibrator 1032 is as second angle controller, second angle controller 1032 is arranged on the horizontal focus of mass analyzing magmet 102, first angle controller 1031 is arranged between second angle controller 1032 and the mass analyzing magmet 102, each angle controller is made up of several solenoids on the low-carbon (LC) rod iron, behind the coil electricity, quadripolar magnetic field can form in the gap between two coils on the rod, each coil can be controlled respectively, produce different quadrupole fields in the part, thereby change the line angle at diverse location.
A kind of strong method that distributes of line stream of improving after ion beam is drawn comprises following steps:
Step 1, ion beam are drawn;
After ion source produces ion beam current, the ion beam current that the line extraction system obtains to disperse by the extraction electrode of dispersing;
Step 2, positively biased pressing plate improve the strong distribution of line stream;
Between line extraction system and mass analyzing magmet, two forward bias conduction plates of line path top and bottom produce electric fields makes the line at two ends press to the middle part, by regulating the size of bias voltage, control beam intensity; (Fig. 2 and Fig. 4 are the comparison example that does not have and have the beam current density distribution of positive bias);
Step 3, two angle controllers adjusting in the angle control system are calibrated the line angle;
Step 3.1, under the situation that angle controller 1031,1032 is closed, use the cup type line angular surveying of faraday device, measure line angle curve as shown in Figure 5;
Step 3.2, opening angle controller 1032, the current value of regulating winding makes that the line middle part is parallel (angle is zero), the angle shaped form that obtains is as shown in Figure 7;
Step 3.3, opening angle controller 1031 are regulated the current value of its top and bottom coil, make the angle of edge line can approach zero or more parallel;
Step 3.4, reuse the cup type line angular surveying of faraday device and carry out the line angular surveying, obtain line angle curve, if the angle at edge away from zero, is higher or lower value with the current value adjustment on first angle controller, 1031 tops and the bottom coil still;
Step 3.5, reuse the cup type line angular surveying of faraday device and carry out the line angular surveying, have some little local angles and change, can control by relevant individual coil is set, final line angle curve as shown in Figure 8.
Non-linear angle changes also can be finished by the coil setting of adjusting second angle controller 1032.
Although content of the present invention has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple modification of the present invention with to substitute all will be conspicuous.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (9)
1. one kind is improved the strong system that distributes of line stream after ion beam is drawn, and comprises:
Ion source produces ion beam current;
Line extraction system (101), the ion beam current that obtains to disperse by the extraction electrode of dispersing;
Mass analyzing magmet (102) is used to select the ion beam of institute's energy requirement;
Line uniformity controller (1031) is used to adjust line in density distribution longitudinally;
Calibrator (1032) stops the divergent trend of line, and makes line become horizontal infection, the implant angle of control line on wafer;
Be arranged on the beam diagnostics equipment near the target wafer place, the long cross sectional dimensions that this beam diagnostics equipment passes ion beam current scans, thereby measures line and inject relevant parameters, and measurement data is fed back to line uniformity controller;
It is characterized in that,
The described strong system that distributes of line stream that improves after ion beam is drawn also comprises two forward bias conduction plates (104), described conductive plate (104) interpolation is arranged on the top and bottom in the line path between line extraction system and the mass analyzing magmet, thereby reduces the beam loss that mass analyzing magmet causes.
2. the strong system that distributes of line stream that after ion beam is drawn, improves as claimed in claim 1, it is characterized in that, described line uniformity controller (1031) is as first angle controller, described calibrator (1032) is as second angle controller, this first angle controller (1031) and second angle controller (1032) are formed the angle control system, change the line angle.
3. the strong system that distributes of line stream that after ion beam is drawn, improves as claimed in claim 2, it is characterized in that, described second angle controller (1032) is arranged on the horizontal focus of mass analyzing magmet (102), and first angle controller (1031) is arranged between second angle controller (1032) and the mass analyzing magmet (102).
4. the strong system that distributes of line stream that after ion beam is drawn, improves as claimed in claim 3, it is characterized in that, each angle controller is made up of several solenoids on the low-carbon (LC) rod iron, behind the coil electricity, quadripolar magnetic field can form in the gap between two coils on the rod, each coil can be controlled respectively, produces different quadrupole fields in the part.
5. the strong system that distributes of line stream that improves after ion beam is drawn as claimed in claim 1 is characterized in that described beam diagnostics equipment is the cup type line current measure device of faraday.
6. one kind is improved the strong method that distributes of line stream after ion beam is drawn, and it is characterized in that, comprises following steps:
Step 1, ion beam are drawn;
After ion source produces ion beam current, the ion beam current that the line extraction system obtains to disperse by the extraction electrode of dispersing;
Step 2, positively biased pressing plate improve the strong distribution of line stream;
Between line extraction system and mass analyzing magmet, two forward bias conduction plates of line path top and bottom produce electric fields makes the line at two ends press to the middle part, by regulating the size of bias voltage, control beam intensity;
Step 3, two angle controllers adjusting in the angle control system are calibrated the line angle.
7. the strong system that distributes of line stream that after ion beam is drawn, improves as claimed in claim 6, it is characterized in that, the distribution of beam intensity can rely on independent adjustment first angle controller or second angle controller to obtain, and perhaps adjusts two angle controllers simultaneously and obtains.
8. the strong system that distributes of line stream that improves after ion beam is drawn as claimed in claim 6 is characterized in that described step 3 comprises following steps:
Step 3.1, under the situation that angle controller is closed, use the cup type line angular surveying of faraday device to measure line angle curve;
Step 3.2, opening angle controller, the current value of regulating winding makes that the line middle part is parallel or angle is zero;
Step 3.3, opening angle controller are regulated the current value of its top and bottom coil, make the angle of edge line can approach zero or more parallel;
Step 3.4, reuse the cup type line angular surveying of faraday device and carry out the line angular surveying, obtain line angle curve, if the angle at edge away from zero, is higher or lower value with the current value adjustment on the first angle controller top and the bottom coil still;
Step 3.5, reuse the cup type line angular surveying of faraday device and carry out the line angular surveying, control local angle and change by relevant individual coil is set.
9. the strong system that distributes of line stream that improves after ion beam is drawn as claimed in claim 8 is characterized in that non-linear angle changes also can be finished by the coil setting of adjusting second angle controller.
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| CN200910195845XA CN102024656B (en) | 2009-09-17 | 2009-09-17 | System and method for improving beam current intensity distribution after leading ion beam out |
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Cited By (7)
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| CN102751155A (en) * | 2011-04-22 | 2012-10-24 | 上海凯世通半导体有限公司 | Beam transmission system and beam transmission method |
| CN102791073A (en) * | 2011-05-17 | 2012-11-21 | 上海凯世通半导体有限公司 | Beam transmission system and transmission method thereof |
| CN102856147A (en) * | 2011-06-28 | 2013-01-02 | 上海凯世通半导体有限公司 | Beam current transmission system and beam current transmission method thereof |
| CN103681191A (en) * | 2013-11-26 | 2014-03-26 | 中国电子科技集团公司第四十八研究所 | Broad beam uniformity adjusting device of ion implanter |
| CN109148246A (en) * | 2017-06-16 | 2019-01-04 | 上海凯世通半导体股份有限公司 | Ion implantation device and method |
| CN112987076A (en) * | 2021-02-07 | 2021-06-18 | 中国科学院近代物理研究所 | Stream intensity detection system for weak beam current |
| CN117969566A (en) * | 2024-04-02 | 2024-05-03 | 天津蓝孚高能物理技术有限公司 | Beam correction device for radiation imaging inspection system |
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| US7087913B2 (en) * | 2003-10-17 | 2006-08-08 | Applied Materials, Inc. | Ion implanter electrodes |
| US7078714B2 (en) * | 2004-05-14 | 2006-07-18 | Nissin Ion Equipment Co., Ltd. | Ion implanting apparatus |
| JP4305499B2 (en) * | 2006-11-27 | 2009-07-29 | 日新イオン機器株式会社 | Ion implanter |
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| CN102751155A (en) * | 2011-04-22 | 2012-10-24 | 上海凯世通半导体有限公司 | Beam transmission system and beam transmission method |
| CN102751155B (en) * | 2011-04-22 | 2015-02-11 | 上海凯世通半导体有限公司 | Beam transmission system and beam transmission method |
| CN102791073A (en) * | 2011-05-17 | 2012-11-21 | 上海凯世通半导体有限公司 | Beam transmission system and transmission method thereof |
| CN102856147B (en) * | 2011-06-28 | 2016-02-17 | 上海凯世通半导体有限公司 | Beam Transport Systems and beam transport method thereof |
| CN102856147A (en) * | 2011-06-28 | 2013-01-02 | 上海凯世通半导体有限公司 | Beam current transmission system and beam current transmission method thereof |
| CN103681191B (en) * | 2013-11-26 | 2016-03-09 | 中国电子科技集团公司第四十八研究所 | A kind of ion implantor wide beam uniformity adjusting device |
| CN103681191A (en) * | 2013-11-26 | 2014-03-26 | 中国电子科技集团公司第四十八研究所 | Broad beam uniformity adjusting device of ion implanter |
| CN109148246A (en) * | 2017-06-16 | 2019-01-04 | 上海凯世通半导体股份有限公司 | Ion implantation device and method |
| CN109148246B (en) * | 2017-06-16 | 2024-02-02 | 上海凯世通半导体股份有限公司 | Ion implantation apparatus and method |
| CN112987076A (en) * | 2021-02-07 | 2021-06-18 | 中国科学院近代物理研究所 | Stream intensity detection system for weak beam current |
| CN112987076B (en) * | 2021-02-07 | 2022-08-16 | 中国科学院近代物理研究所 | Stream intensity detection system for weak beam current |
| CN117969566A (en) * | 2024-04-02 | 2024-05-03 | 天津蓝孚高能物理技术有限公司 | Beam correction device for radiation imaging inspection system |
| CN117969566B (en) * | 2024-04-02 | 2024-06-04 | 天津蓝孚高能物理技术有限公司 | Beam correction device for radiation imaging inspection system |
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Address after: 201203, building 7, building 200, Newton Road, Zhangjiang hi tech park, Shanghai, 1 Patentee after: KINGSTONE SEMICONDUCTOR COMPANY LTD. Address before: 201203, building 7, building 200, Newton Road, Zhangjiang hi tech park, Shanghai, 1 Patentee before: Shanghai Kaishitong Semiconductor Co., Ltd. |