CN102013622B - A kind of single longitudinal mode laser in microchip of frequency-adjustable - Google Patents
A kind of single longitudinal mode laser in microchip of frequency-adjustable Download PDFInfo
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- CN102013622B CN102013622B CN201010548964.1A CN201010548964A CN102013622B CN 102013622 B CN102013622 B CN 102013622B CN 201010548964 A CN201010548964 A CN 201010548964A CN 102013622 B CN102013622 B CN 102013622B
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Abstract
The present invention relates to field of lasers, particularly relate to single longitudinal mode laser in microchip.The single longitudinal mode laser in microchip of frequency-adjustable of the present invention, comprise produce pump light pump light source, the collimation collimating lens of pump light, coupling pumping light is to the coupled lens of micro-piece type laser cavity and microchip single longitudinal mode laser chamber.Wherein, described microchip single longitudinal mode laser chamber at least comprises a gain medium sheet of gummed and the optical crystal sheet of a band angle of wedge, and before and after being plated on, lead to the chamber mirror film of light end face, by regulating the different incident pump points of pump light in microchip single longitudinal mode laser chamber, and then regulate single longitudinal mode laser output frequency.The single longitudinal mode laser in microchip of frequency-adjustable of the present invention by 2 or more pump lights respectively pumping produce, produce two bundle or the multiple lasers be separated.Therefore, it influences each other less, and frequency is more stable, and difference on the frequency is also stablized controlled more.
Description
Technical field
The present invention relates to field of lasers, particularly relate to single longitudinal mode laser in microchip.
Background technology
Two-frequency laser is in the research of communication optical fiber; The image procossing of satellite transmission photo; The accurate measurement of relative phase and displacement; Optically active substance Quality Research in light industry chemical industry; The measurement of optical element and optical film performance; Precision optics is measured; Precision optical machinery is measured; The Laser Power Devices of precision instrument and Advanced Concepts Laboratory; Composition two-frequency laser array, produces the fields such as two optical frequency frequency differences of hundreds of megahertz and is all widely used.
In the field such as accurate measurement, frequency reference, the acquisition of the dual wavelength that frequency gap is fixed or even multi wave length illuminating source is extremely important.In accurate measurement, the double-wavelength light source in especially tangible Michelson's interferometer intermediate frequency gap by applying magnetic field to obtain in He-Ne laser, and the laser of this kind of structure has the larger shortcoming of complex structure volume.
Have again Chinese Patent Application No. be 200810071796.4 technical scheme propose a kind of two-frequency laser, resonant cavity before it obtains double-frequency laser to resonant cavity after pump light pumping remaining after pump light with this and exports, due to the power stability of unsteadiness therefore two frequency of Pumping light absorption, frequency stability, the stability of difference on the frequency is all poor.
Summary of the invention
Therefore, the present invention is directed to the deficiency that above-mentioned two-frequency laser exists, propose the laser structure that a kind of structure simply can realize adjustable fixed frequency gap, it can realize the double frequency even laser structure of multifrequency in adjustable frequency gap.
The present invention adopts following technical scheme:
A single longitudinal mode laser in microchip for frequency-adjustable, comprise produce pump light pump light source, the collimation collimating lens of pump light, coupling pumping light is to the coupled lens of micro-piece type laser cavity and microchip single longitudinal mode laser chamber.Wherein, described microchip single longitudinal mode laser chamber at least comprises a gain medium sheet of gummed and the optical crystal sheet of a band angle of wedge, and before and after being plated on, lead to the chamber mirror film of light end face, by regulating the different incident pump points of pump light in microchip single longitudinal mode laser chamber, and then regulate single longitudinal mode laser output frequency.
Further, Xie Jiao≤10 of the optical crystal sheet of the described band angle of wedge ".
Further, Hou Du≤100 μm of described gain medium sheet.
Further, by regulating the position of coupled lens to make the position of focal beam spot occur skew, and then realize regulating pump light to offset in the position of the different incident pump points in microchip single longitudinal mode laser chamber.
Further, described pump light source is 1, and by microchip single longitudinal mode laser chamber that the 2 bundle pump lights that a beam splitter is divided into space interval come described in pumping.The position of described beam splitter can regulate.
Further, described pump light source be 2 or more than, the pump light producing the space interval of respective numbers bundle comes the microchip single longitudinal mode laser chamber described in pumping.The pump power of described pump light source can regulate.
Further, described gain medium sheet is isotropic gain medium, or anisotropic gain medium.
Further, the optical crystal sheet of the described band angle of wedge is crystal wafer that is identical with gain medium sheet or different substrates material.
Further, other optical crystal sheet is also inserted in described microchip single longitudinal mode laser chamber.
Further, the optical crystal sheet of described other comprises heat radiation crystal wafer, linear crystal sheet, nonlinear crystal sheet.
The present invention adopts as above technical scheme, and a kind of structure simply can realize the laser structure in adjustable fixed frequency gap, and it can realize the double frequency even laser structure of multifrequency in adjustable frequency gap.The advantage that the microplate of this kind of structure has is: by 2 or more pump lights respectively pumping produce, produce two bundle or the multiple lasers be separated.Therefore, it influences each other less, and frequency is more stable, and difference on the frequency is also stablized controlled more.
Accompanying drawing explanation
Fig. 1 is the structural representation of embodiments of the invention 1.
Fig. 2 is the structural representation of embodiments of the invention 2.
Fig. 3 a is the 1st kind of structural representation in microchip single longitudinal mode laser chamber of the present invention.
Fig. 3 b is the 2nd kind of structural representation in microchip single longitudinal mode laser chamber of the present invention.
Fig. 3 c is the 3rd kind of structural representation in microchip single longitudinal mode laser chamber of the present invention.
Fig. 3 d is the 4th kind of structural representation in microchip single longitudinal mode laser chamber of the present invention.
Fig. 3 e is the 5th kind of structural representation in microchip single longitudinal mode laser chamber of the present invention.
Embodiment
Now the present invention is further described with embodiment by reference to the accompanying drawings.
The single longitudinal mode laser in microchip of frequency-adjustable of the present invention, comprise produce pump light pump light source, the collimation collimating lens of pump light, coupling pumping light is to the coupled lens of micro-piece type laser cavity and microchip single longitudinal mode laser chamber.Wherein, described microchip single longitudinal mode laser chamber at least comprises a gain medium sheet of gummed and the optical crystal sheet of a band angle of wedge, and before and after being plated on, lead to the chamber mirror film of light end face, by regulating the different incident pump points of pump light in microchip single longitudinal mode laser chamber, and then regulate single longitudinal mode laser output frequency.
Consult the single longitudinal mode laser in microchip of the frequency-adjustable shown in Fig. 1, whole laser cavity angle is δ θ, and the value of the angle of wedge δ θ of the optical crystal sheet 202 namely with the angle of wedge should within 10 seconds, to ensure that the pumping threshold that it produces laser generation is unlikely to too high.Two pumping point location gap are L, if the emission wavelength of 1 road laser is λ
0, effective cavity length is d, and so we just can obtain the frequency gap of 1 road laser and 2 road laser: Δ λ=λ
0* L*tan (δ θ)/d, pumping point is got different positions and is just had different Δ λ, namely reaches the object of fine setting frequency gap.
Wherein, 101 is semiconductor laser pumping light source, and 102a is optical alignment element, 103 is light-splitting device, adopts NPBS beam splitting, also can adopt other light-splitting devices, can beam splitting be two restraint also easily extensible and be divided into multiple beam, export to realize light beam laser, 102b be optical focusing element.104 is microchip single longitudinal mode laser chamber, and it is made up of ultra-thin gain medium 201 and optical wedge gusset plate 202, and leads to front cavity mirror film 203 and the Effect of Back-Cavity Mirror film 204 of light end face before and after being plated on.The THICKNESS CONTROL of ultra-thin gain medium 201 within 100um, with ensure short gain media realize single longitudinal mode export.It can be isotropic gain medium, as Nd:YAG, can be also anisotropic gain medium, as Nd:YVO
4.202 for being with the optical crystal sheet of the angle of wedge, i.e. optical wedge gusset plate, its material can be the undoped host material identical with gain medium, as YAG/YVO
4, also can be that Single-handed Dinghy open-Laser optical material that optical property is similar or different is as SF11, K9 etc.
It should be noted that, if optical wedge gusset plate 202 is the undoped host material identical with gain medium 201, as YAG/YVO
4, such have identical thermo-optical properties due to whole laser cavity, and therefore 1 road laser is identical with the temperature variant frequency drift of 2 road laser, can realize the high-temperature stability of difference on the frequency.If optical wedge gusset plate 202 is the optical material that optical property is different, 1 road laser will be different from its frequency amount of varying with temperature of 2 road laser.
Adopt same semiconductor pumped light source 101, we can realize the adjustment of relative pumping position of Nd by regulating the relative position of beam splitting element 103 and optical focusing element 102b and then realize the adjustment of frequency gap.
Consulting shown in Fig. 2, is another example structure of patent of the present invention.It adopts two semiconductors to swash pumping source 101a, 101b to carry out the diverse location in pump micro-slice formula single longitudinal mode laser chamber 104 to produce different laser output wavelengths respectively.The watt level of pumping source 101a, 101b is swashed by adjusting different semiconductor, it is long that the thermal effect changing diverse location in microchip single longitudinal mode laser chamber 104 with this produces different effective laser cavities, can finely tune the difference on the frequency of two (or multiple) laser output wavelengths like this.Also skew is to reach the object of adjustment outgoing laser beam difference on the frequency the position of focal beam spot can be occurred by the position of fine adjustment collimation focusing lens 102 in addition.Described pump light source can also be 3 or more than, the pump light producing the space interval of respective numbers bundle comes the microchip single longitudinal mode laser chamber 104 described in pumping.
Consult shown in Fig. 3 a-Fig. 3 e, microchip single longitudinal mode laser chamber 104 of the present invention can be the structure of the optical crystal sheet inserting or do not insert other, and optical crystal sheet comprises heat radiation crystal wafer, linear crystal sheet, nonlinear crystal sheet.
Such as, shown in Fig. 3 a is the microchip laserresonator be made up of ultra-thin gain medium 201 and ordinary optical angle of wedge sheet 202 in embodiment 1.The microchip laserresonator be made up of the optical wedge gusset plate 206 of the nonlinear crystal of ultra-thin gain medium 201 and KTP shown in Fig. 3 b.The microchip laserresonator be made up of heat radiation crystal 205, ultra-thin gain medium 201 and ordinary optical angle of wedge sheet 202 shown in Fig. 3 c, heat radiation crystal can be YAG, YVO4 etc.The microchip laserresonator be made up of nonlinear crystal sheet 207 and the ordinary optical angle of wedge sheet 202 of ultra-thin gain medium 201, LBO shown in Fig. 3 d.The microchip laserresonator be made up of nonlinear crystal sheet 207 and the ordinary optical angle of wedge sheet 202 of heat radiation crystal 205, ultra-thin gain medium 201, LBO shown in Fig. 3 e.The conversion that nonlinear crystal can realize fundamental laser wavelength is all introduced in Fig. 3 b, Fig. 3 d, Fig. 3 e.The alternative of such laser cavity structure can be multiple, no longer exhaustive and repeat in this.
Although specifically show in conjunction with preferred embodiment and describe the present invention; but those skilled in the art should be understood that; not departing from the spirit and scope of the present invention that appended claims limits; can make a variety of changes the present invention in the form and details, be protection scope of the present invention.
Claims (10)
1. the single longitudinal mode laser in microchip of a frequency-adjustable, comprise the pump light source producing pump light, the collimating lens of collimation pump light, coupling pumping light is to the coupled lens of micro-piece type laser cavity and microchip single longitudinal mode laser chamber, it is characterized in that: described microchip single longitudinal mode laser chamber at least comprises a gain medium sheet of gummed and the optical crystal sheet of a band angle of wedge, and before and after being plated on, lead to the chamber mirror film of light end face, by regulating the different incident pump points of pump light in microchip single longitudinal mode laser chamber, different effective laser cavity that the thermal effect changing diverse location in microchip single longitudinal mode laser chamber with this produces is long, and then regulate single longitudinal mode laser output frequency, and Hou Du≤100 μm of described gain medium sheet, Xie Jiao≤10 of the optical crystal sheet of the described band angle of wedge ".
2. the single longitudinal mode laser in microchip of frequency-adjustable according to claim 1, it is characterized in that: by regulating the position of coupled lens to make the position of focal beam spot occur skew, and then realize regulating pump light to offset in the position of the different incident pump points in microchip single longitudinal mode laser chamber.
3. the single longitudinal mode laser in microchip of frequency-adjustable according to claim 1, is characterized in that: described pump light source is 1, and by microchip single longitudinal mode laser chamber that the 2 bundle pump lights that a beam splitter is divided into space interval come described in pumping.
4. the single longitudinal mode laser in microchip of frequency-adjustable according to claim 3, is characterized in that: the position of described beam splitter can regulate.
5. the single longitudinal mode laser in microchip of frequency-adjustable according to claim 1, is characterized in that: described pump light source be 2 or more than, the pump light producing the space interval of respective numbers bundle comes the microchip single longitudinal mode laser chamber described in pumping.
6. the single longitudinal mode laser in microchip of frequency-adjustable according to claim 5, is characterized in that: the pump power of described pump light source can regulate.
7. the single longitudinal mode laser in microchip of frequency-adjustable according to claim 1, is characterized in that: described gain medium sheet is isotropic gain medium, or anisotropic gain medium.
8. the single longitudinal mode laser in microchip of frequency-adjustable according to claim 1, is characterized in that: the optical crystal sheet of the described band angle of wedge is crystal wafer that is identical with gain medium sheet or different substrates material.
9. the single longitudinal mode laser in microchip of frequency-adjustable according to claim 1, is characterized in that: other optical crystal sheet is also inserted in described microchip single longitudinal mode laser chamber.
10. the single longitudinal mode laser in microchip of the frequency-adjustable stated according to claim 9, is characterized in that: other described optical crystal sheet comprises heat radiation crystal wafer, linear crystal sheet, nonlinear crystal sheet.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102412497A (en) * | 2011-09-16 | 2012-04-11 | 清华大学 | One-chip neodymium-doped yttrium aluminum garnet (Nd:YAG) laser capable of outputting multiple beams of laser light simultaneously |
| CN103227407A (en) * | 2013-04-19 | 2013-07-31 | 杭州电子科技大学 | Double-frequency microchip laser device based on adjustable frequency difference |
| KR102243474B1 (en) * | 2014-01-24 | 2021-04-21 | 캘리포니아 인스티튜트 오브 테크놀로지 | Dual-frequency optical source |
| TW201719109A (en) | 2015-11-23 | 2017-06-01 | 財團法人工業技術研究院 | Apparatus for measuring cavity length of optical resonant cavity |
| CN105470793A (en) * | 2015-12-29 | 2016-04-06 | 哈尔滨工业大学 | Device and method for achieving stable dual-frequency laser output by using etalon and electro-optical crystal |
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| CN101093930A (en) * | 2007-07-26 | 2007-12-26 | 福州高意通讯有限公司 | Single longitudinal mode laser in microchip |
| CN101242075A (en) * | 2008-01-30 | 2008-08-13 | 福州高意通讯有限公司 | Optical structure and its application |
| CN101340051A (en) * | 2008-08-27 | 2009-01-07 | 福州高意通讯有限公司 | Single longitudinal mode laser |
| CN101355227A (en) * | 2008-09-11 | 2009-01-28 | 福州高意通讯有限公司 | Method for implementing dual-frequency output laser |
| CN101388521A (en) * | 2008-10-14 | 2009-03-18 | 福州高意通讯有限公司 | Method realizing adjustment of laser frequency difference and laser thereof |
| CN201478677U (en) * | 2009-08-10 | 2010-05-19 | 福州高意通讯有限公司 | Pumping structure used for a plurality of lasers |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101093930A (en) * | 2007-07-26 | 2007-12-26 | 福州高意通讯有限公司 | Single longitudinal mode laser in microchip |
| CN101242075A (en) * | 2008-01-30 | 2008-08-13 | 福州高意通讯有限公司 | Optical structure and its application |
| CN101340051A (en) * | 2008-08-27 | 2009-01-07 | 福州高意通讯有限公司 | Single longitudinal mode laser |
| CN101355227A (en) * | 2008-09-11 | 2009-01-28 | 福州高意通讯有限公司 | Method for implementing dual-frequency output laser |
| CN101388521A (en) * | 2008-10-14 | 2009-03-18 | 福州高意通讯有限公司 | Method realizing adjustment of laser frequency difference and laser thereof |
| CN201478677U (en) * | 2009-08-10 | 2010-05-19 | 福州高意通讯有限公司 | Pumping structure used for a plurality of lasers |
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Effective date of registration: 20171017 Address after: Jinan District Fuk new road 350000 Fuzhou city of Fujian province No. 253 CATIC industrial district Patentee after: Fuzhou Photop Technologies Inc. Address before: No. 39 Fuxing Road, Jinan District, Fuzhou city of Fujian Province in 360014 Patentee before: Photop Technologies, Inc. |