CN101966792A - Method for forming patterns on surface of gem - Google Patents
Method for forming patterns on surface of gem Download PDFInfo
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- CN101966792A CN101966792A CN2009101608691A CN200910160869A CN101966792A CN 101966792 A CN101966792 A CN 101966792A CN 2009101608691 A CN2009101608691 A CN 2009101608691A CN 200910160869 A CN200910160869 A CN 200910160869A CN 101966792 A CN101966792 A CN 101966792A
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Abstract
The invention discloses a method for forming patterns on the surface of a gem. The method comprises the following steps of: covering one surface of the gem with a mask layer on which the patterns are hollowed out; growing a crystal layer at the position corresponding to the hollowed patterns of the mask layer by lamination technology; and repeating the steps to form another crystal layer on other surfaces of the gem or on the surface of the formed crystal layer in a laminating way. By controlling the condition of crystal growth, the grown crystal has a color which is the same as or different from that of the original gem, so that the patterns with three-dimensional and colorful figures and/or words are formed on any side of the gem on the premise of not damaging the gem and not reducing the mass of the gem.
Description
Technical field
The invention relates to a kind of method at gemstone surface formation figure line, refer in particular to and utilize the shielding layer with hollow out structure to be covered in the surface of jewel, not destroying the mode of gemological quality, that lamination goes out to have is three-dimensional, the figure of color and/or the method for literal.
Background technology
Jewel process in appearance handle out have special graph, the moulding of lines or literal, can beautify the outward appearance of jewel and its value that gains.Yet the generation type of general figures, lines or literal is outer to be implemented in destructive modes such as mechanical lapping, Laser Processing or chemical etchings, and this kind method not only causes the loss of gemological quality, and in case the processing error is difficult to recovery.In addition, process formed figure, lines or literal in the above described manner, can only present the tone identical, can't give the jewel abundant colors and change with former jewel.And existing jewel with multicolour is that the cameo incrustation with different colours is formed in a jewel mostly.
Summary of the invention
In view of existing gem processing has as above disappearance point, therefore, the invention provides a kind of method, can directly form figure, lines or literal and not destroy jewel, to solve the problem that existing gem processing can reduce gemological quality in gemstone surface at gemstone surface formation figure line.
The present invention also provides a kind of method at gemstone surface formation figure line, can form figure, lines or literal in gemstone surface accurately, and solve the error problem of existing gem processing.
The present invention also provides a kind of method at gemstone surface formation figure line, can form in gemstone surface to be different from figure, lines or the literal of former color of gemstones, and solve the problem that existing gem processing has only single color.
Aforesaid method at gemstone surface formation figure line of the present invention, its step comprises: the gemstone surface that the shielding layer of at least one figure of engraving line is covered in desire formation figure line; At figure line hollow out place deposition growing one profile of the shielding layer of gemstone surface first crystal layer corresponding to hollow out figure line; And, shielding layer is removed on gemstone surface.If when forming the figure line of several layers of different graphic or size, its step also comprises: the surface that another shielding layer of engraving the figure line is covered in first crystal layer; Second crystal layer of a profile of growing at the figure line hollow out place of the shielding layer on the first crystal layer surface corresponding to hollow out figure line; At last, shielding layer is removed on the first crystal layer surface, can obtain the relief figure line that the gemstone surface lamination has first and second crystal number of plies layer.
Aforesaid method at gemstone surface formation figure line, wherein first crystal layer grows in a smooth surface or a sunk surface of jewel, and sunk surface can utilize laser or etching or machining to form.The surface area of jewel desire formation figure line should try one's best broadness and flat-satin, in order to avoid cause figure line thickness and contoured profile inhomogeneous, with the diamond is example, and the bizet desktop (Table) of circular (Round), princess side (Princess), emerald shape (Emerald), Lei Dien (Radiant) forms better suited plane for the figure line.
Aforesaid method at gemstone surface formation figure line, wherein the material of the jewel and first crystal layer can be homogeneity or heterogeneous, and jewel can be the natural or synthetic cut stone of tool crystal structure, as diamond, corundum, zircon etc.; Jewel can carry out earlier that cutting and grinding shapes or in the figure line form back processing also can, but the latter more easily causes the damage of figure line.The color of the jewel and first crystal layer can be same color or different colours, can arrange in pairs or groups according to the color of design requirement and pie graph line, for example arranges in pairs or groups with the contrast color that right and wrong is clearly obvious.
Aforesaid method at gemstone surface formation figure line, wherein the material of shielding layer is the composite of metal or pottery or metal and pottery; And the hollow out figure line of shielding layer can form with modes such as mechanical stamping, turning, Laser Processing, chemical etching, electric paste etchings.
Aforesaid method at gemstone surface formation figure line, wherein the method for crystal growth is selected from collocation mixing use each other between chemical vapour deposition technique (Chemical Vapor Deposition), physical vaporous deposition (Physical Vapor Deposition), chemical solution method (Chemical SolutionDeposition), pulsed laser deposition (Pulsed Laser Deposition), molecular beam epitaxy method (Mo1ecular Beam Epitaxy), galvanoplastic at least a methods such as (Electroplating) or each method.
As above-mentioned any growing method, all can obtain the gem crystal of tool specific color by the adjustment of synthetic parameters such as crystal growth condition.With chemical vapour deposition technique (CVD) diamond growth is example, because can influencing the behavior of the inner carbon of diamond crystal, nitrogen and defective, the temperature of growth changes, therefore often being dark-brown or black at crystal growth temperature greater than 1300 ℃ of diamond crystals of being grown, then is brown or yellow less than 1300 ℃ of diamond crystal colors of being grown.When nitrogen concentration is considerably less in the CVD cavity, can grow the diamond crystal (nitrogen content is lower than 0.001%) of clear, colorless.But work as the interior nitrogen concentration of CVD cavity very for a long time, the diamond crystal of the green that then is easy to get.In addition, because that boron can make diamond produce is blue, the boron that therefore adds trace in the diamond crystal growth course then can obtain blue diamond, if but add the amount of boron when too much (in about 10,000 carbon atoms a boron atom being arranged), just can cause opaque black-and-blue diamond.
Except CVD, other crystal growth pattern also can obtain the crystal of different color equally, for example can utilize pulsed laser deposition (PLD) to carry out crystal growth.Pulsed laser deposition is a kind of of physical vaporous deposition (PVD), have another name called laser melting loss sedimentation (LaserAblation Deposition), its principle is to utilize the pulsed laser irradiation of high-energy-density on the target of desire plating material, make the target material flash evapn and then be deposited on substrate surface, be usually used in the growth of metal oxide, metal nitride or carbide.The present invention's employed lasing light emitter of method does not according to this limit, can select suitable laser system according to employed target material, general plated film laser system commonly used has Nd:YAG laser (wavelength 1064nm or frequency doubling system) or KrF (wavelength 248nm) PRK.Because having, this method keeps the characteristic that grown crystal and target have identical or approaching composition proportion of composing, therefore the crystal color colour system of desire growth can be decided by the color of target, and the influence that is subjected to laser pulse power, crystal growth temperature and oxygen partial pressure can present different tone (Hue), light and shade (Tone) and transparency (Transparency) and changes.For example desire to make the crystal of zirconium oxide color that grows to have red tone, then can select red zirconia target for use, employed pulse power is 1mJ at least, and repetition rate is more than the 1Hz, growth temperature can be by room temperature to 1000 ℃, and partial pressure of oxygen is that 0-300mTorr carries out the adjustment on the color.Basically under bigger laser power, the low more color of crystal of zirconium oxide that makes of temperature and partial pressure of oxygen is dark more and opaque.
Aforesaid method at gemstone surface formation figure line also comprises a plated film step, and the one anti abrasive protective clear layer of crystal layer surface coating in the end makes the figure line can not suffer external force to collide and damage.
Through the as above jewel processed of method of the present invention, except that the purposes of former Jewelry Accessories, also can be applicable to, open fortune amulet etc. and decorate elaboration or article as trade mark famous brand, cuff button collar badge, elaboration pendant, souvenir.
Description of drawings
Fig. 1 is the step schematic diagram of first preferred embodiment of the method that forms the figure line in gemstone surface of the present invention.
Fig. 2 is the step schematic diagram of second preferred embodiment of the method that forms the figure line in gemstone surface of the present invention.
Main Reference numeral
11 shielding layers
12 jewels
13 surfaces
14 figure line hollow out places
15 first crystal layers
16 shielding layers
17 figure line hollow out places
18 second crystal layers
The specific embodiment
Below enumerate at least one embodiment and specify better embodiment of the present invention and characteristic thereof.
As shown in Figure 1 of the present invention forms the step schematic diagram of first preferred embodiment of the method for figure line in gemstone surface, its step comprises: the shielding layer 11 of at least one figure of engraving line is covered in the surface 13 in the jewel 12 of desire formation figure line; Then, the figure line hollow out place 14 at the shielding layer 11 of gemstone surface utilizes first crystal layer 15 of crystal technique deposition growing one profile corresponding to hollow out figure line; At last, shielding layer 11 is removed on gemstone surface, promptly obtain a figure line (i.e. first crystal layer 15) that protrudes in gemstone surface.
As shown in Figure 2 of the present invention forms the step schematic diagram of second preferred embodiment of the method for figure line in gemstone surface, finish formed figure line after the above-mentioned steps, can be that perhaps the figure line is scattered in a plurality of surfaces at single figure line or a plurality of figure line on a wherein surface of jewel.In addition,, then can repeat above-mentioned step, comprise: the surface that another shielding layer 16 of engraving the figure line is covered in first crystal layer 15 at gemstone surface formation figure line if desire on completed figure line surface again the figure line of lamination number layer; At second crystal layer 18 of 17 growths, one profile in the figure line hollow out place of the shielding layer 16 on first crystal layer, 15 surfaces corresponding to hollow out figure line; After 15 growths of first crystal layer are finished, shielding layer 11 is removed on first crystal layer, 15 surfaces.In above-mentioned preferred embodiment because sheathed shielding layer 11 earlier around first crystal layer 15, though so shielding layer 16 be covered in first crystal layer, 15 surfaces, also be placed on shielding layer 11 surfaces simultaneously; But shielding layer 16 can directly contact with gemstone surface by the mode of extending pin or increasing thickness, and the mode that needn't adopt the shielding layer storehouse.
As first and second above-mentioned specific embodiment, wherein jewel is selected cubic zirconia jewel (cubic zirconia, the popular name Soviet Union bores) for use, and the surface of jewel formation figure line is a specific face of viewing and admiring (selecting the maximum surface of jewel usually).In addition, first and second specific embodiment utilizes the method for carrying out crystal growth to be pulsed laser deposition (PLD), wherein uses the KrF PRK; The PLD target is selected cubic zirconia; Pulse or laser power 10-650mJ; Repetition rate is 1-50Hz; Crystal growth temperature is by room temperature to 1000 ℃; Partial pressure of oxygen is 0-300mTorr.Carry out crystal growth with PLD, can and adjust each conditional parameter by the different targets of selection, and obtain the crystal of different colours, for example:
The 3rd embodiment uses black cubic zirconia target, and laser power is 100mJ, repetition rate is 10Hz, crystal growth temperature is a room temperature, and does not additionally grow under the condition of aerating oxygen (oxygen partial pressure is 0), can grow to have opaque black cubic crystal of zirconium oxide.
The 4th embodiment, target are red cubic zirconia, and laser power 80mJ, crystal growth temperature are room temperature, but partial pressure of oxygen is to grow under the condition of 30mTorr, can obtain the translucent cubic crystal of zirconium oxide of aubergine.
The 5th embodiment, target still are red cubic zirconia, and laser power is 50mJ, and crystal growth temperature is kept room temperature, and partial pressure of oxygen is to grow under the condition of 50mTorr, then can form the cubic crystal of zirconium oxide of white; Increase to 300 ℃ yet work as temperature, the cubic crystal of zirconium oxide of being grown will form filbert.
The 6th embodiment, target still are blue cubic zirconia, and laser power is 100mJ, and crystal growth temperature is kept room temperature, and partial pressure of oxygen is to grow under the condition of 15mTorr, then can form blue cubic crystal of zirconium oxide.
The 7th embodiment, target are arbitrary color cubic zirconia, and laser power is 100mJ, and crystal growth temperature is greater than 300 ℃, and partial pressure of oxygen is to grow under the condition of 50mTorr, then can form the cubic crystal of zirconium oxide of clear, colorless.
The colorful cubic crystal of zirconium oxide of being grown as above-mentioned the 3rd to six embodiment can be again imposes temperature greater than 300 ℃ through a heating schedule, so that colorful cubic crystal of zirconium oxide is become clear, colorless.
According to the different targets of above-mentioned selection and adjust each conditional parameter, can obtain the practice of the crystal of different colours, can on a jewel, form the full-color figure line that different color makes up.Second embodiment for example shown in Figure 2, wherein first crystal layer 15 can be the crystal of zirconium oxide of a blueness, second crystal layer 18 then is red crystal of zirconium oxide layer, or first crystal layer, 15 surfaces also are provided with one the 3rd crystal layer (not shown), and the 3rd crystal layer and second crystal layer 18 can be identical or different lamination height, identical or different color crystal, so that constitute figure, the literal with solid, rich colors on jewel.
In above-mentioned all embodiment, when different colours figure line is current on same jewel or crystrallographic plane, the shielding plate of back processing need cover lower floor or the preceding figure line that once forms, and is formed at the zone or the position of not planning to avoid the figure line.
Above embodiment only is explanation better embodiment of the present invention, be not in order to limit interest field of the present invention, any those skilled in the art does not deviate from change, the modification of the technology of the present invention spirit after considering the as above disclosed technical descriptioon of the present invention in light of actual conditions, all be fine.Therefore, described in basic right request scope of the present invention such as the claim of the present invention.
Claims (18)
1. one kind forms the method for figure line in gemstone surface, and its step comprises:
The shielding layer of at least one figure of engraving line is covered in the gemstone surface of desire formation figure line;
At figure line hollow out place deposition growing one profile of the shielding layer of gemstone surface first crystal layer corresponding to hollow out figure line; And
Shielding layer is removed on gemstone surface.
2. the method at gemstone surface formation figure line as claimed in claim 1, wherein first crystal layer grows in a smooth surface of jewel.
3. the method at gemstone surface formation figure line as claimed in claim 1, wherein first crystal layer grows in a sunk surface of jewel.
4. as claimed in claim 3ly form the method for figure line in gemstone surface, wherein the sunk surface of jewel forms with laser or etching or machining.
5. the method at gemstone surface formation figure line as claimed in claim 1, wherein the material of the jewel and first crystal layer is a homogeneity or heterogeneous.
6. the method at gemstone surface formation figure line as claimed in claim 1, wherein the color of the jewel and first crystal layer is same color or different colours.
7. as claimed in claim 1ly form the method for figure line in gemstone surface, wherein the method for crystal growth is selected from least a in chemical vapour deposition technique, physical vaporous deposition, chemical solution method, pulsed laser deposition, molecular beam epitaxy method, the galvanoplastic.
8. as claimed in claim 7ly form the method for figure line in gemstone surface, utilize the pulsed laser deposition crystal of growing, the condition of its grown crystal comprises: target and jewel homogeneity or heterogeneous; Lasing light emitter is the wherein a kind of of Nd:YAG laser or KrF PRK; Laser power is 1mJ at least; Repetition rate is more than the 1Hz; Growth temperature is a room temperature to 1000 ℃; Partial pressure of oxygen is 0-300mTorr.
9. the method at gemstone surface formation figure line as claimed in claim 8, the cubic crystal of zirconium oxide of the opaque jet black colors of growing, the condition of its grown crystal is: target is a black cubic zirconia; Lasing light emitter is the KrF PRK; Laser power 100mJ; Repetition rate is 10Hz; Growth temperature is a room temperature; Partial pressure of oxygen is 0mTorr.
10. the method at gemstone surface formation figure line as claimed in claim 8, the translucent cubic crystal of zirconium oxide of the aubergine of growing, the condition of its grown crystal is: target is a red cubic zirconia; Lasing light emitter is the KrF PRK; Laser power 80mJ; Repetition rate is 10Hz; Growth temperature is a room temperature; Partial pressure of oxygen is 30mTorr.
11. the method at gemstone surface formation figure line as claimed in claim 8, the cubic crystal of zirconium oxide of the white of growing, the condition of its grown crystal is: target is a red cubic zirconia; Lasing light emitter is the KrF PRK; Laser power 50mJ; Repetition rate is 10Hz; Growth temperature is a room temperature; Partial pressure of oxygen is 50mTorr.
12. the method at gemstone surface formation figure line as claimed in claim 8, the hazel cubic crystal of zirconium oxide of growing, the condition of its grown crystal is: target is a red cubic zirconia; Lasing light emitter is the KrF PRK; Laser power 50mJ; Repetition rate is 10Hz; Growth temperature is 300 ℃; Partial pressure of oxygen is 50mTorr.
13. as claim 8 a described method at gemstone surface formation figure line, the cubic crystal of zirconium oxide of the blueness of growing, the condition of its grown crystal is: target is a blue cubic zirconia; Lasing light emitter is the KrF PRK; Laser power 100mJ; Repetition rate is 10Hz; Growth temperature is a room temperature; Partial pressure of oxygen is 15mTorr.
14., also comprise a heating schedule as one of them described method of claim 9 to 13 at gemstone surface formation figure line, impose on colorful cubic crystal of zirconium oxide with temperature greater than 300 ℃, make its color become clear, colorless.
15. the method at gemstone surface formation figure line as claimed in claim 8, the cubic crystal of zirconium oxide of the clear, colorless of growing, the condition of its grown crystal is: target is the cubic zirconia of arbitrary color; Lasing light emitter is the KrF PRK; Laser power 100mJ; Repetition rate is 10Hz; Growth temperature is greater than 300 ℃; Partial pressure of oxygen is 50mTorr.
16. the method at gemstone surface formation figure line as claimed in claim 1, its step also comprises:
Another shielding layer of engraving the figure line is covered in the surface of first crystal layer;
Second crystal layer of a profile of growing in the figure line hollow out place of the shielding layer on the first crystal layer surface corresponding to hollow out figure line; And
Shielding layer is removed on the first crystal layer surface.
17. the method at gemstone surface formation figure line as claimed in claim 1 also comprises a plated film step, in first crystal layer surface coating, one anti abrasive protective clear layer.
18. the method at gemstone surface formation figure line as claimed in claim 1, wherein the material of shielding layer is the composite of metal or pottery or metal and pottery.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101608691A CN101966792A (en) | 2009-07-28 | 2009-07-28 | Method for forming patterns on surface of gem |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101608691A CN101966792A (en) | 2009-07-28 | 2009-07-28 | Method for forming patterns on surface of gem |
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| CN101966792A true CN101966792A (en) | 2011-02-09 |
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| CN2009101608691A Pending CN101966792A (en) | 2009-07-28 | 2009-07-28 | Method for forming patterns on surface of gem |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102771970A (en) * | 2012-08-09 | 2012-11-14 | 邓民 | Titanium decorating process on precious stone |
| CN111455324A (en) * | 2020-04-21 | 2020-07-28 | 华南理工大学 | Preparation method of crystal form and thickness controllable zirconium dioxide film |
-
2009
- 2009-07-28 CN CN2009101608691A patent/CN101966792A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102771970A (en) * | 2012-08-09 | 2012-11-14 | 邓民 | Titanium decorating process on precious stone |
| CN111455324A (en) * | 2020-04-21 | 2020-07-28 | 华南理工大学 | Preparation method of crystal form and thickness controllable zirconium dioxide film |
| CN111455324B (en) * | 2020-04-21 | 2021-10-26 | 华南理工大学 | Preparation method of crystal form and thickness controllable zirconium dioxide film |
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Application publication date: 20110209 |