CN101931001B - Asymmetric fast thyristor - Google Patents
Asymmetric fast thyristor Download PDFInfo
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- CN101931001B CN101931001B CN2009100628132A CN200910062813A CN101931001B CN 101931001 B CN101931001 B CN 101931001B CN 2009100628132 A CN2009100628132 A CN 2009100628132A CN 200910062813 A CN200910062813 A CN 200910062813A CN 101931001 B CN101931001 B CN 101931001B
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- anode region
- high concentration
- thyristor
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- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 238000009792 diffusion process Methods 0.000 claims description 5
- 238000011084 recovery Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
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Abstract
The invention discloses an asymmetric fast thyristor. Belongs to the technical field of power semiconductor devices. The fast thyristor mainly solves the problems of large voltage drop, poor dynamic characteristics and the like when being applied to series inversion of the existing fast thyristor. The PNPN three-layer structure is mainly characterized by comprising a tube shell and a PNPN four-layer three-end structure semiconductor chip packaged in the tube shell; the junction depth of the P1 anode region 1 of the semiconductor chip is 20-70% of the junction depth of the P2 cathode region 3, and P1 anode region 1 is provided with P+And a high concentration region 8. The invention can obviously reduce the on-state voltage drop when being applied to series inversion, thereby improving the on-state capability and the working reliability, simultaneously optimizing the internal structure, reducing the large injected stored charge and improving the recovery softness, and is mainly used for a high-power series inversion power supply device.
Description
Technical field
The invention belongs to the power semiconductor technical field.Be specifically related to a kind of semiconductor variable flow device, be mainly used in high-power series resonant inverter supply unit.
Background technology
At present, the most parallel inverter technology that adopt of induction heating power, used semiconductor device is a high speed thyristor, typical circuit is as shown in Figure 1.After reactor is output as direct current, the inverter bridge of being made up of 4 high speed thyristors receives the triggering signal that control unit sends to the three-phase alternating current of input, and direct current is carried out conversion, exports high-frequency single-phase alternating current through over commutation.And a kind of more efficient, stable and bigger scheme of fan-out capability is the series resonant inverter technology, and typical circuit is as shown in Figure 2.Different with the parallel inverter technology is that inverter bridge is high-frequency ac voltage output with the dc voltage conversion of rectifier bridge output.
High speed thyristor is the semiconductor device of four layer of three end structure of a kind of PNPN, through improving structural design and minority carrier control technology, makes it have higher switching speed than triode thyristor, thereby is applicable to the power converter of 200Hz～10kHz.No matter series resonant inverter or parallel inverter, the domestic high speed thyristor that all uses forward and reverse voltage identical (symmetry), promptly the P1 anode region is identical with the junction depth in cathode terminal P2 district, and N1 growing base area layer thickness is bigger.When being applied to series resonant inverter, because of its through-current capability of pressure drop ambassador is restricted.And because dynamic characteristic is relatively poor, to the stability and the easy generation of the reliability harmful effect of single unit system operation.
Summary of the invention
The object of the invention provides a kind of when being applied to series resonant inverter to above-mentioned weak point exactly; Can obviously reduce on-state voltage drop; Thereby improve the on-state ability and improve functional reliability; Simultaneously can more optimize internal structure, reduce the big store charge that injects, improve the asymmetric high speed thyristor that recovers softness.
Technical solution of the present invention is: a kind of asymmetric high speed thyristor; Comprise shell and the semiconductor chip that is encapsulated in four layer of three end structure of PNPN in this shell; It is characterized in that: the junction depth of the P1 anode region of described semiconductor chip is 20～70% of a cathode terminal P2 district junction depth, and P1 is provided with P in the anode region
+High concentration region.
The junction depth of the P1 anode region described in the technical solution of the present invention is 15～80 μ m; The junction depth in cathode terminal P2 district is 45～130 μ m, and surface concentration is 1.5～8 * 10
17Cm
-3The thickness of N1 growing base area is 110～350 μ m; P in the P1 anode region
+The surface concentration of high concentration region is 2 * 10
19～9.5 * 10
20Cm
-3
P in the P1 anode region described in the technical solution of the present invention
+High concentration region is that single window diffuses to form P
+The high concentration region junction depth is less than P1 anode region junction depth.
P in the P1 anode region described in the technical solution of the present invention
+High concentration region is that multiwindow diffuses to form, P
+The high concentration region junction depth is less than P1 anode region junction depth.
P in the P1 anode region described in the technical solution of the present invention
+High concentration region is that multiwindow diffuses to form, P
+The high concentration region junction depth is greater than P1 anode region junction depth.
The present invention is because more shallow than the junction depth in cathode terminal P2 district with the junction depth design of the P1 anode region of the semiconductor chip of four layer of three end structure of PNPN, and the thickness of N1 growing base area is than general thyristor thin 20%～30%; P1 anode region surface concentration also is higher than cathode terminal P2 district, thereby makes the asymmetric design in two P districts of thyristor, has obviously reduced the on-state voltage drop of device, thereby improves the reliability of on-state ability and work.The present invention has overcome the deficiency of prior art, has when being applied to series resonant inverter, can obviously reduce on-state voltage drop; Thereby improve the on-state ability and improve functional reliability; Simultaneously can more optimize internal structure, reduce the big store charge that injects, improve the characteristics of recovering softness.The present invention is mainly used in high-power series resonant inverter supply unit.
Description of drawings
Fig. 1 is the parallel inverter circuit theory diagrams;
Fig. 2 is the series resonant inverter circuit theory diagrams;
Fig. 3 is high speed thyristor chip structure figure;
Fig. 4 is the chip structure figure of the embodiment of the invention 1;
Fig. 5 is the chip structure figure of the embodiment of the invention 2;
Fig. 6 is the chip structure figure of the embodiment of the invention 3.
Embodiment
According to different application requirements
Silicon single crystal is selected the NTD material for use, and resistivity is 30～140 Ω .cm, thickness 380～600 μ m.Choosing of gross thickness both requires to guarantee the withstand voltage requirement of N1 growing base area 2 realization device forwards, is unlikely to increase pressure drop again.
With the surface protection in cathode terminal P2 district 3 good after, through methods such as grinding, sandblast and chemical corrosions, silicon chip is carried out skiving from the P1 end handles.Remove 30～150 μ m.
Behind the wafer thinning, surface oxidation treatment is done simultaneously with cathode terminal P2 district 3 in P1 anode region 1.Target end P2 district 3 surface oxide layers carry out selective etching then, and N type diffusion of impurities is done on 3 surfaces, target end P2 district again, form N2 cathodic region 4, junction depth 12～28 μ m, surface concentration 2 * 10
19～9.5 * 10
20
1 surface, P1 anode region is diffuseed to form P through too high surface concentration P type
+ High concentration region 8, junction depth 25～70 μ m.P in case of necessity
+Diffusion is selected on high concentration region 8 surfaces.
For improving asymmetric thyristor switch speed, to spreading good silicon chip gold doping or mixing the platinum diffusion, to reduce minority carrier lifetime.Diffusion temperature is 830～880 ℃, 20～45 minutes time.Also adopt electron irradiation, be characterized in that leakage current is little, hot properties is better.
On molybdenum sheet, selective etch is again carried out after the metal evaporation on target end P2 district 3 and 4 surfaces, N2 cathodic region with ready-made asymmetric thyristor silicon chip sintering, clear needed figure and gate pole 5, the negative electrode 6 isolated, and molybdenum sheet is as the anode 7 of chip.At last chip is installed in the standard shell of customization, accomplishes the final packaging and the test of the asymmetric high speed thyristor of the present invention.
Table one is the 76mm high speed thyristor and the main static index test contrast of asymmetric thyristor of same specification:
Table one
Data show, when identical forward off state voltage design, and the average V of asymmetric thyristor on-state voltage drop
TMThan the low 0.72V of conventional high speed thyristor, reach 25%.This shows its lower on-state loss that is in operation.
Table two
Table two is dynamic parameter sample testing contrasts.Therefrom see: asymmetric thyristor is faster than the service time summary of conventional high speed thyristor, and it is less to recover electric charge, and expansion voltage is lower.Through Computer Simulation, its switching loss is little by 27%.
Above result of the test shows that asymmetric high speed thyristor, has than remarkable advantages with respect to the thyristor of conventional symmetric design on dynamic and static characteristic.
Claims (4)
1. asymmetric high speed thyristor; Comprise shell and the semiconductor chip that is encapsulated in four layer of three end structure of PNPN in this shell; It is characterized in that: the junction depth of the P1 anode region (1) of described semiconductor chip is 20～70% of cathode terminal P2 district (a 3) junction depth, and the junction depth of P1 anode region (1) is 15～80 μ m; The junction depth in cathode terminal P2 district (3) is 45～130 μ m, and surface concentration is 1.5～8 * 10
17Cm
-3The thickness of N1 growing base area (2) is 110～350 μ m; Be provided with the P that adopts the window diffusion in the P1 anode region (1)
+P in the high concentration region (8), P1 anode region (1)
+The surface concentration of high concentration region (8) is 2 * 10
19～9.5 * 10
20Cm
-3
2. a kind of asymmetric high speed thyristor according to claim 1 is characterized in that: the P in the described P1 anode region (1)
+The single window of high concentration region (8) diffuses to form P
+High concentration region (8) junction depth is less than P1 anode region (1) junction depth.
3. a kind of asymmetric high speed thyristor according to claim 1 is characterized in that: the P in the described P1 anode region
+High concentration region (8) is that multiwindow diffuses to form, P
+High concentration region (8) junction depth is less than P1 anode region junction depth.
4. a kind of asymmetric high speed thyristor according to claim 1 is characterized in that: the P in the described P1 anode region
+High concentration region (8) is that multiwindow diffuses to form, P
+High concentration region (8) junction depth is greater than P1 anode region junction depth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100628132A CN101931001B (en) | 2009-06-24 | 2009-06-24 | Asymmetric fast thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100628132A CN101931001B (en) | 2009-06-24 | 2009-06-24 | Asymmetric fast thyristor |
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| Publication Number | Publication Date |
|---|---|
| CN101931001A CN101931001A (en) | 2010-12-29 |
| CN101931001B true CN101931001B (en) | 2012-05-30 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014183432A1 (en) * | 2013-05-17 | 2014-11-20 | 国家电网公司 | Integrated heat-dissipation thyristor |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102184951A (en) * | 2011-03-23 | 2011-09-14 | 浙江正邦电力电子有限公司 | High-temperature-resistance high-power thyristor |
| CN103378144A (en) * | 2012-04-20 | 2013-10-30 | 湖北台基半导体股份有限公司 | Impulse power thyristor |
| CN103378143A (en) * | 2012-04-20 | 2013-10-30 | 湖北台基半导体股份有限公司 | Thyristor with buffer layer structure |
| FR3011124A1 (en) * | 2013-09-26 | 2015-03-27 | St Microelectronics Tours Sas | SCR COMPONENT WITH STABLE TEMPERATURE CHARACTERISTICS |
| CN104637998B (en) * | 2015-02-06 | 2017-06-30 | 清华大学 | A kind of method for improving IGCT antijamming capability |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3634739A (en) * | 1969-12-02 | 1972-01-11 | Licentia Gmbh | Thyristor having at least four semiconductive regions and method of making the same |
| GB2175443A (en) * | 1985-05-15 | 1986-11-26 | Philips Electronic Associated | Bipolar semiconductor device |
| US4654679A (en) * | 1983-10-05 | 1987-03-31 | Toyo Denki Seizo Kabushiki Kaisha | Static induction thyristor with stepped-doping gate region |
| CN1126372A (en) * | 1994-06-10 | 1996-07-10 | Abb管理有限公司 | Short circuit structure on side of positive pole of unsymetric silicon brake tube |
| CN101013699A (en) * | 2007-02-09 | 2007-08-08 | 华中科技大学 | Semiconductor pulse power switch and method for making same |
| EP1835542A3 (en) * | 1999-09-30 | 2007-10-03 | Kabushiki Kaisha Toshiba | Semiconductor device with trench gate |
| CN101228635A (en) * | 2005-07-22 | 2008-07-23 | Abb技术有限公司 | Power semiconductor device |
| CN201430142Y (en) * | 2009-06-24 | 2010-03-24 | 湖北台基半导体股份有限公司 | Asymmetric fast switching thyristor |
-
2009
- 2009-06-24 CN CN2009100628132A patent/CN101931001B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3634739A (en) * | 1969-12-02 | 1972-01-11 | Licentia Gmbh | Thyristor having at least four semiconductive regions and method of making the same |
| US4654679A (en) * | 1983-10-05 | 1987-03-31 | Toyo Denki Seizo Kabushiki Kaisha | Static induction thyristor with stepped-doping gate region |
| GB2175443A (en) * | 1985-05-15 | 1986-11-26 | Philips Electronic Associated | Bipolar semiconductor device |
| CN1126372A (en) * | 1994-06-10 | 1996-07-10 | Abb管理有限公司 | Short circuit structure on side of positive pole of unsymetric silicon brake tube |
| EP1835542A3 (en) * | 1999-09-30 | 2007-10-03 | Kabushiki Kaisha Toshiba | Semiconductor device with trench gate |
| CN101228635A (en) * | 2005-07-22 | 2008-07-23 | Abb技术有限公司 | Power semiconductor device |
| CN101013699A (en) * | 2007-02-09 | 2007-08-08 | 华中科技大学 | Semiconductor pulse power switch and method for making same |
| CN201430142Y (en) * | 2009-06-24 | 2010-03-24 | 湖北台基半导体股份有限公司 | Asymmetric fast switching thyristor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014183432A1 (en) * | 2013-05-17 | 2014-11-20 | 国家电网公司 | Integrated heat-dissipation thyristor |
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|---|---|
| CN101931001A (en) | 2010-12-29 |
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