CN101807523A - Method for growing GaN film without crack on surface on large mismatch substrate - Google Patents
Method for growing GaN film without crack on surface on large mismatch substrate Download PDFInfo
- Publication number
- CN101807523A CN101807523A CN 201010128376 CN201010128376A CN101807523A CN 101807523 A CN101807523 A CN 101807523A CN 201010128376 CN201010128376 CN 201010128376 CN 201010128376 A CN201010128376 A CN 201010128376A CN 101807523 A CN101807523 A CN 101807523A
- Authority
- CN
- China
- Prior art keywords
- gan
- substrate
- superlattice
- buffer layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 27
- 230000007704 transition Effects 0.000 claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims abstract description 5
- 238000002360 preparation method Methods 0.000 claims abstract description 5
- -1 nitride compound Chemical class 0.000 claims description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 12
- 239000000155 melt Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 3
- 239000005416 organic matter Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 11
- 239000010409 thin film Substances 0.000 abstract description 5
- 239000002131 composite material Substances 0.000 abstract 3
- 150000004767 nitrides Chemical class 0.000 abstract 3
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 230000035882 stress Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 206010042209 Stress Diseases 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
一种在大失配衬底上生长表面无裂纹的GaN薄膜的方法，包括如下步骤：步骤1：选择一大失配衬底；步骤2：在大失配衬底上生长一层氮化物复合缓冲层，该氮化物复合缓冲层可以缓解晶格失配，并且阻止回熔刻蚀反应；步骤3：在氮化物复合缓冲层上生长一层GaN过渡层；步骤4：在GaN过渡层上生长一组超晶格，该超晶格可以释放部分张应力，并能过滤穿透位错；步骤5：在超晶格上面生长GaN外延层，完成GaN薄膜的制备。
A method for growing a crack-free GaN thin film on a large mismatch substrate, comprising the following steps: step 1: selecting a large mismatch substrate; step 2: growing a layer of nitride composite on the large mismatch substrate Buffer layer, the nitride composite buffer layer can relieve the lattice mismatch and prevent the melting back etching reaction; step 3: grow a layer of GaN transition layer on the nitride composite buffer layer; step 4: grow on the GaN transition layer A set of superlattice, which can release part of the tensile stress and filter threading dislocations; step 5: grow a GaN epitaxial layer on the superlattice to complete the preparation of the GaN film.
Description
Technical field
The invention belongs to technical field of semiconductors, refer in particular on the substrate of big mismatch, utilize the nitride compound buffer layer in conjunction with the flawless GaN thin-film material of the method growing surface of superlattice.
Background technology
The GaN material is as typical case's representative of third generation semi-conducting material, have that energy gap is big, electron drift velocity is big, pyroconductivity is high, the characteristics of high pressure resistant, heat-resisting decomposition, corrosion-resistant and radioresistens irradiation, with and unique polarity effect, be particularly suitable for making hyperfrequency, high temperature, high withstand voltage, high power device, have broad application prospects at radio communication, radar-probing system, high-temperature electronic device and lighting field.
But because the GaN material lacks homo-substrate, generally adopt the mode of heteroepitaxy to grow at present, the most frequently used substrate is sapphire, carborundum and silicon.Because carborundum cost height and size are little, are difficult to extensive use; The thermal conductivity of Sapphire Substrate is too low, and epitaxial material is made the high temperature high power device and is restricted; And the silicon substrate price is low, manufacture craft is ripe, size is big, thermal conductivity is high, easy cleavage, and can realize that silicon based opto-electronics is integrated; Therefore adopt silicon substrate epitaxial growth GaN material that remarkable advantages is arranged.
Yet because the lattice constant and the difference of thermal expansion coefficients of silicon and two kinds of materials of GaN are very big, its lattice mismatch and thermal mismatching reach 17% and 56% respectively, cause having bigger tensile stress in the epitaxial loayer, thereby crack in the GaN film.Macrolattice mismatch causes and have a large amount of dislocations in epitaxial loayer simultaneously, has reduced the crystal mass of GaN film.This paper proposes to adopt method on silicon substrate the growing GaN epitaxial loayer of nitride compound buffer layer in conjunction with superlattice, can effectively reduce face crack density, improves crystal mass.
Summary of the invention
Main purpose of the present invention is, provide a kind of on the substrate of big mismatch the method for the flawless GaN film in epitaxial growth surface, adopt this method can significantly improve the crystal mass of GaN epitaxial loayer, eliminate face crack, obtain device level GaN thin-film material.
The invention provides a kind of on big mismatch substrate the method for the flawless GaN film of growing surface, comprise the steps:
Step 1: select a big mismatch substrate;
Step 2: growth one deck nitride compound buffer layer on big mismatch substrate, this nitride compound buffer layer can be alleviated lattice mismatch, and stops the melt back etching reaction;
Step 3: growth one deck GaN transition zone on the nitride compound buffer layer;
Step 4: one group of superlattice of growth on the GaN transition zone, these superlattice can the release portion tensile stress, and can filter threading dislocation;
Step 5: growing GaN epitaxial loayer on superlattice, finish the preparation of GaN film.
Wherein said big mismatch substrate is a silicon substrate.
Wherein said on big mismatch substrate the method for growing nitride compound buffer layer, GaN transition zone, superlattice and GaN epitaxial loayer be to adopt the method for metal organic-matter chemical vapour phase epitaxy.
Wherein said nitride compound buffer layer comprises: an AlN layer and the AlxInyGazN layer of growing on the AlN layer.
The thickness of wherein said GaN transition zone is 0.1-0.4 μ m, and growth temperature is 800-1100 ℃.
The material of wherein said superlattice is AlN/Al
xGa
yN.
The growth temperature of wherein said GaN epitaxial loayer is 800-1100 ℃.
The thickness of the AlN layer in the wherein said nitride compound buffer layer is 50-250nm, and growth temperature is 900-1100 ℃.
Al in the wherein said nitride compound buffer layer
xIn
yGa
zThe thickness of N layer is 60-240nm, x+y+z=1 wherein, and 0＜x＜1,0≤y＜1,0＜z＜1, growth temperature is 900-1100 ℃.
AlN and Al in the wherein said superlattice
xGa
yThe thickness of N is respectively 3-12nm and 6-25nm, x+y=1 wherein, and 0≤x＜1,0＜y≤1, the growth temperature of superlattice is 900-1100 ℃.
Description of drawings
For further specifying technology contents of the present invention, below in conjunction with embodiment and accompanying drawing the present invention is done a detailed description, wherein:
Fig. 1 is the schematic flow sheet of the present invention's epitaxial growth GaN thin-film material on big mismatch substrate;
Fig. 2 is the method schematic diagram of the present invention's epitaxial growth GaN thin-film material on silicon substrate;
Embodiment
For describing technical scheme of the present invention in detail,, and, the present invention is described in further details with reference to accompanying drawing below in conjunction with specific embodiment.
As shown in Figure 1, 2, for provided by the invention a kind of on big mismatch substrate the method for the flawless GaN film of growing surface, comprise the steps:
Step 1: select a big mismatch substrate 01, this big mismatch substrate 01 is a silicon substrate;
Step 2: growth one deck nitride compound buffer layer 02 on big mismatch substrate 01, the lattice parameter of this nitride compound buffer layer 02 is littler than the lattice parameter of GaN epitaxial loayer, therefore can provide compression, alleviate subsequent step Grown GaN epitaxial loayer 05 in temperature-fall period because the tensile stress that silicon substrate and GaN epitaxial loayer thermal mismatching cause, and stop the melt back etching reaction, wherein said nitride compound buffer layer 02 comprises: an AlN layer 021 and the AlxInyGazN layer 022 of growing on the AlN layer, the thickness of the AlN layer 021 in the described nitride compound buffer layer 02 is 50-250nm, growth temperature is 900-1100 ℃, the thickness of AlxInyGazN layer 022 is 60-240nm in the described nitride compound buffer layer 02, x+y+z=1 wherein, 0＜x＜1,0≤y＜1,0＜z＜1, growth temperature are 900-1100 ℃;
Step 3: growth one deck GaN transition zone 03 on nitride compound buffer layer 02, the thickness of described GaN transition zone 03 is 0.1-0.4 μ m, growth temperature is 800-1100 ℃;
Step 4: one group of superlattice 04 of growth on GaN transition zone 03, these superlattice 04 can the release portion tensile stress, and energy filter threading dislocation, the material of wherein said superlattice 04 is AlN/AlxGayN, the thickness of AlN and AlxGayN is respectively 3-12nm and 6-25nm in the wherein said superlattice 04, x+y=1 wherein, 0≤x＜1,0＜y≤1, the growth temperature of superlattice 04 are 900-1100 ℃;
Step 5: growing GaN epitaxial loayer 05 on superlattice 04, the growth temperature of this GaN epitaxial loayer 05 is 800-1100 ℃, finishes the preparation of GaN film.
Described on big mismatch silicon substrate 01 method of growing nitride compound buffer layer 02, GaN transition zone 03, superlattice 04 and GaN epitaxial loayer 05 be to adopt the method for metal organic-matter chemical vapour phase epitaxy.
Embodiment
The invention provides a kind of on big mismatch substrate the method for the flawless GaN film of growing surface, comprise the steps:
Step 1: select a silicon substrate 01;
Step 2: growth one deck nitride compound buffer layer 02 on silicon substrate 01, this nitride compound buffer layer 02 can be alleviated lattice mismatch, and stops the melt back etching reaction, and this nitride compound buffer layer 02 comprises an AlN layer 021 and the Al that grows on the AlN layer
xIn
yGa
zN layer 022;
Step 3: the thick GaN transition zone 03 of growth one deck 0.2 μ m on nitride compound buffer layer 02, the growth temperature of this GaN transition zone 03 is 950 ℃;
Step 4: one group of superlattice 04 of growth on GaN transition zone 03, superlattice 04 comprise AlN and the thick Al of 6-25nm that 3-12nm is thick
xGa
yN, these superlattice 04 can the release portion tensile stresss, and can filter threading dislocation; Wherein said, x+y=1 wherein, 0≤x＜1,0＜y≤1, the growth temperature of superlattice is 1000 ℃.
Step 5: growing GaN epitaxial loayer 05 on superlattice 04, growth temperature is 950 ℃, finishes the preparation of GaN film.
The above; only be the embodiment among the present invention, but protection scope of the present invention is not limited thereto, anyly is familiar with the people of this technology in the disclosed technical scope of the present invention; the conversion that can expect easily or replacement all should be encompassed in of the present invention comprising within the scope.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Claims (10)
1. the method for the flawless GaN film of growing surface on big mismatch substrate comprises the steps:
Step 1: select a big mismatch substrate;
Step 2: growth one deck nitride compound buffer layer on big mismatch substrate, this nitride compound buffer layer can be alleviated lattice mismatch, and stops the melt back etching reaction;
Step 3: growth one deck GaN transition zone on the nitride compound buffer layer;
Step 4: one group of superlattice of growth on the GaN transition zone, these superlattice can the release portion tensile stress, and can filter threading dislocation;
Step 5: growing GaN epitaxial loayer on superlattice, finish the preparation of GaN film.
2. according to claim 1 on big mismatch substrate the method for the flawless GaN film of growing surface, wherein said big mismatch substrate is a silicon substrate.
3. according to claim 1 on big mismatch substrate the method for the flawless GaN film of growing surface, wherein said on big mismatch substrate the method for growing nitride compound buffer layer, GaN transition zone, superlattice and GaN epitaxial loayer be to adopt the method for metal organic-matter chemical vapour phase epitaxy.
4. according to claim 1 on big mismatch substrate the method for the flawless GaN film of growing surface, wherein said nitride compound buffer layer comprises: an AlN layer and the Al that grows on the AlN layer
xIn
yGa
zThe N layer.
5. according to claim 1 on big mismatch substrate the method for the flawless GaN film of growing surface, the thickness of wherein said GaN transition zone is 0.1-0.4 μ m, growth temperature is 800-1100 ℃.
6. according to claim 1 on big mismatch substrate the method for the flawless GaN film of growing surface, the material of wherein said superlattice is AlN/Al
xGa
yN.
7. according to claim 1 on big mismatch substrate the method for the flawless GaN film of growing surface, the growth temperature of wherein said GaN epitaxial loayer is 800-1100 ℃.
8. according to claim 4 on big mismatch substrate the method for the flawless GaN film of growing surface, the thickness of the AlN layer in the wherein said nitride compound buffer layer is 50-250nm, growth temperature is 900-1100 ℃.
9. according to claim 4 on big mismatch substrate the method for the flawless GaN film of growing surface, Al in the wherein said nitride compound buffer layer
xIn
yGa
zThe thickness of N layer is 60-240nm, x+y+z=1 wherein, and 0＜x＜1,0≤y＜1,0＜z＜1, growth temperature is 900-1100 ℃.
10. the method for the flawless GaN film of growing surface on the big mismatch substrate according to claim 6, AlN and Al in the wherein said superlattice
xGa
yThe thickness of N is respectively 3-12nm and 6-25nm, x+y=1 wherein, and 0≤x＜1,0＜y≤1, the growth temperature of superlattice is 900-1100 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010128376 CN101807523A (en) | 2010-03-17 | 2010-03-17 | Method for growing GaN film without crack on surface on large mismatch substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010128376 CN101807523A (en) | 2010-03-17 | 2010-03-17 | Method for growing GaN film without crack on surface on large mismatch substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101807523A true CN101807523A (en) | 2010-08-18 |
Family
ID=42609258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010128376 Pending CN101807523A (en) | 2010-03-17 | 2010-03-17 | Method for growing GaN film without crack on surface on large mismatch substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101807523A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102925968A (en) * | 2012-10-17 | 2013-02-13 | 中国电子科技集团公司第五十五研究所 | Strain control method of nitride single crystal thin film |
| CN105161578A (en) * | 2015-08-17 | 2015-12-16 | 中国科学院半导体研究所 | Growth method of GaN thin film on Si substrate and composite GaN thin film |
| CN105489723A (en) * | 2016-01-15 | 2016-04-13 | 厦门市三安光电科技有限公司 | Nitride bottom layer and manufacturing method thereof |
| CN105914128A (en) * | 2015-02-19 | 2016-08-31 | 汉民科技股份有限公司 | Semiconductor template and manufacturing method thereof |
| CN110752146A (en) * | 2019-10-28 | 2020-02-04 | 北京华进创威电子有限公司 | Method for growing gallium nitride film on silicon substrate |
| CN113874559A (en) * | 2019-03-13 | 2021-12-31 | 德州仪器公司 | Nitride semiconductor substrate and method for manufacturing same |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1552104A (en) * | 2001-05-30 | 2004-12-01 | ���﹫˾ | Group III nitride based light emitting diode structures with a quantum well and superlattice |
| US20070131953A1 (en) * | 2005-12-13 | 2007-06-14 | Lg Innotek Co., Ltd | Nitride semiconductor light emitting device and method for fabricating the same |
| CN1992166A (en) * | 2005-12-29 | 2007-07-04 | 深圳大学 | Process for sapphire-based non-mask transverse epitaxial growth of high quality group-III nitride film |
| CN1996625A (en) * | 2006-01-06 | 2007-07-11 | 大连路明科技集团有限公司 | GaN base optical electronic part and its making method |
| CN101060076A (en) * | 2007-05-14 | 2007-10-24 | 武汉大学 | A manufacture method for GaN insulation or semi-insulation epitaxy layer |
| CN101136432A (en) * | 2006-09-01 | 2008-03-05 | 中国科学院半导体研究所 | Structure and Fabrication Method of Wide Bandgap Gallium Nitride Based Heterojunction Field Effect Transistor |
| CN100433364C (en) * | 2006-10-16 | 2008-11-12 | 中国电子科技集团公司第五十五研究所 | Composite buffer layer nitride high electronic migration rate transmistor epitaxial structure and its manufacturing method |
-
2010
- 2010-03-17 CN CN 201010128376 patent/CN101807523A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1552104A (en) * | 2001-05-30 | 2004-12-01 | ���﹫˾ | Group III nitride based light emitting diode structures with a quantum well and superlattice |
| US20070131953A1 (en) * | 2005-12-13 | 2007-06-14 | Lg Innotek Co., Ltd | Nitride semiconductor light emitting device and method for fabricating the same |
| CN1992166A (en) * | 2005-12-29 | 2007-07-04 | 深圳大学 | Process for sapphire-based non-mask transverse epitaxial growth of high quality group-III nitride film |
| CN1996625A (en) * | 2006-01-06 | 2007-07-11 | 大连路明科技集团有限公司 | GaN base optical electronic part and its making method |
| CN101136432A (en) * | 2006-09-01 | 2008-03-05 | 中国科学院半导体研究所 | Structure and Fabrication Method of Wide Bandgap Gallium Nitride Based Heterojunction Field Effect Transistor |
| CN100433364C (en) * | 2006-10-16 | 2008-11-12 | 中国电子科技集团公司第五十五研究所 | Composite buffer layer nitride high electronic migration rate transmistor epitaxial structure and its manufacturing method |
| CN101060076A (en) * | 2007-05-14 | 2007-10-24 | 武汉大学 | A manufacture method for GaN insulation or semi-insulation epitaxy layer |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102925968A (en) * | 2012-10-17 | 2013-02-13 | 中国电子科技集团公司第五十五研究所 | Strain control method of nitride single crystal thin film |
| CN102925968B (en) * | 2012-10-17 | 2015-11-18 | 中国电子科技集团公司第五十五研究所 | A kind of strain regulate and control method of nitride single crystal film |
| CN105914128A (en) * | 2015-02-19 | 2016-08-31 | 汉民科技股份有限公司 | Semiconductor template and manufacturing method thereof |
| CN105914128B (en) * | 2015-02-19 | 2018-12-18 | 汉民科技股份有限公司 | Semiconductor template and manufacturing method thereof |
| CN105161578A (en) * | 2015-08-17 | 2015-12-16 | 中国科学院半导体研究所 | Growth method of GaN thin film on Si substrate and composite GaN thin film |
| CN105161578B (en) * | 2015-08-17 | 2018-03-23 | 中国科学院半导体研究所 | The growing method of GaN film and compound GaN film on Si substrates |
| CN105489723A (en) * | 2016-01-15 | 2016-04-13 | 厦门市三安光电科技有限公司 | Nitride bottom layer and manufacturing method thereof |
| CN113874559A (en) * | 2019-03-13 | 2021-12-31 | 德州仪器公司 | Nitride semiconductor substrate and method for manufacturing same |
| CN110752146A (en) * | 2019-10-28 | 2020-02-04 | 北京华进创威电子有限公司 | Method for growing gallium nitride film on silicon substrate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100505165C (en) | A method for preparing gallium nitride single crystal substrate | |
| CN101771121A (en) | Structure of SiC or Si substrate GaN-based crystal and method for growing same | |
| CN111009602B (en) | Epitaxial substrate with 2D material interposer, preparation method and manufacturing assembly | |
| CN101807523A (en) | Method for growing GaN film without crack on surface on large mismatch substrate | |
| CN102851734B (en) | Semiconductor extension structure and growing method thereof | |
| CN102828251A (en) | Method for preparing aluminum nitride single crystal material | |
| CN109585269A (en) | A method of semiconductor monocrystal substrate is prepared using two dimensional crystal transition zone | |
| CN105720088B (en) | Silicon based gallium nitride epitaxial structure and its manufacturing method | |
| US8956952B2 (en) | Multilayer substrate structure and method of manufacturing the same | |
| CN107919392A (en) | Gallium nitride base nitride high electronic migration rate transmistor epitaxial structure and growing method | |
| CN103247516A (en) | Semiconductor structure and forming method thereof | |
| CN109461644A (en) | The preparation method and substrate of transparent single crystal AlN, ultraviolet light emitting device | |
| CN103117209B (en) | Gradient AlGaN layer preparation method and device prepared by same | |
| CN106128948A (en) | Strain modulating layer is utilized to reduce structure and the method for GaN layer threading dislocation on a si substrate | |
| WO2020207234A1 (en) | Single crystal substrate using 2d-material epitaxy to eliminate defects, and fabricating method therefor and components thereof | |
| CN212967721U (en) | GaN-on-Si epitaxial substrate with 2D material interlayer | |
| CN105810725A (en) | Silicon-based gallium nitride semiconductor wafer and manufacturing method thereof | |
| CN101901756A (en) | MOCVD Growth Method of Polar c-plane GaN Thin Films on C-plane Al2O3 Substrate | |
| CN110752146A (en) | Method for growing gallium nitride film on silicon substrate | |
| CN105762061B (en) | A kind of epitaxial growth method of nitride | |
| CN101560692A (en) | Growth method of non-polar plane InN material | |
| CN101429650A (en) | Method for in-situ preparation of self-supporting gallium nitride underlay | |
| CN210984756U (en) | Epitaxial substrate with 2D material interposer | |
| CN204792796U (en) | Compound template of III clans nitride / foreign substrate | |
| CN101230487A (en) | Method for growing indium nitride single crystal thin film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20100818 |