CN101807523A - Method for growing GaN film without crack on surface on large mismatch substrate - Google Patents
Method for growing GaN film without crack on surface on large mismatch substrate Download PDFInfo
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- CN101807523A CN101807523A CN 201010128376 CN201010128376A CN101807523A CN 101807523 A CN101807523 A CN 101807523A CN 201010128376 CN201010128376 CN 201010128376 CN 201010128376 A CN201010128376 A CN 201010128376A CN 101807523 A CN101807523 A CN 101807523A
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Abstract
The invention relates to a method for growing a GaN film without crack on the surface on a large mismatch substrate, which comprises the following steps that: Step 1: the large mismatch substrate is selected; Step 2: a nitride composite buffer layer is grown on the large mismatch substrate, and can relieve lattice mismatch and stop back-melting etching reaction; Step 3: a GaN transition layer is grown on the nitride composite buffer layer; Step 4: a group of superlattice is grown on the GaN transition layer, and can release some tensile stress and filter threading dislocation; and Step 5: a GaN epitaxial layer is grown on the superlattice, and the preparation of the GaN film is completed.
Description
Technical field
The invention belongs to technical field of semiconductors, refer in particular on the substrate of big mismatch, utilize the nitride compound buffer layer in conjunction with the flawless GaN thin-film material of the method growing surface of superlattice.
Background technology
The GaN material is as typical case's representative of third generation semi-conducting material, have that energy gap is big, electron drift velocity is big, pyroconductivity is high, the characteristics of high pressure resistant, heat-resisting decomposition, corrosion-resistant and radioresistens irradiation, with and unique polarity effect, be particularly suitable for making hyperfrequency, high temperature, high withstand voltage, high power device, have broad application prospects at radio communication, radar-probing system, high-temperature electronic device and lighting field.
But because the GaN material lacks homo-substrate, generally adopt the mode of heteroepitaxy to grow at present, the most frequently used substrate is sapphire, carborundum and silicon.Because carborundum cost height and size are little, are difficult to extensive use; The thermal conductivity of Sapphire Substrate is too low, and epitaxial material is made the high temperature high power device and is restricted; And the silicon substrate price is low, manufacture craft is ripe, size is big, thermal conductivity is high, easy cleavage, and can realize that silicon based opto-electronics is integrated; Therefore adopt silicon substrate epitaxial growth GaN material that remarkable advantages is arranged.
Yet because the lattice constant and the difference of thermal expansion coefficients of silicon and two kinds of materials of GaN are very big, its lattice mismatch and thermal mismatching reach 17% and 56% respectively, cause having bigger tensile stress in the epitaxial loayer, thereby crack in the GaN film.Macrolattice mismatch causes and have a large amount of dislocations in epitaxial loayer simultaneously, has reduced the crystal mass of GaN film.This paper proposes to adopt method on silicon substrate the growing GaN epitaxial loayer of nitride compound buffer layer in conjunction with superlattice, can effectively reduce face crack density, improves crystal mass.
Summary of the invention
Main purpose of the present invention is, provide a kind of on the substrate of big mismatch the method for the flawless GaN film in epitaxial growth surface, adopt this method can significantly improve the crystal mass of GaN epitaxial loayer, eliminate face crack, obtain device level GaN thin-film material.
The invention provides a kind of on big mismatch substrate the method for the flawless GaN film of growing surface, comprise the steps:
Step 1: select a big mismatch substrate;
Step 2: growth one deck nitride compound buffer layer on big mismatch substrate, this nitride compound buffer layer can be alleviated lattice mismatch, and stops the melt back etching reaction;
Step 3: growth one deck GaN transition zone on the nitride compound buffer layer;
Step 4: one group of superlattice of growth on the GaN transition zone, these superlattice can the release portion tensile stress, and can filter threading dislocation;
Step 5: growing GaN epitaxial loayer on superlattice, finish the preparation of GaN film.
Wherein said big mismatch substrate is a silicon substrate.
Wherein said on big mismatch substrate the method for growing nitride compound buffer layer, GaN transition zone, superlattice and GaN epitaxial loayer be to adopt the method for metal organic-matter chemical vapour phase epitaxy.
Wherein said nitride compound buffer layer comprises: an AlN layer and the AlxInyGazN layer of growing on the AlN layer.
The thickness of wherein said GaN transition zone is 0.1-0.4 μ m, and growth temperature is 800-1100 ℃.
The material of wherein said superlattice is AlN/Al
xGa
yN.
The growth temperature of wherein said GaN epitaxial loayer is 800-1100 ℃.
The thickness of the AlN layer in the wherein said nitride compound buffer layer is 50-250nm, and growth temperature is 900-1100 ℃.
Al in the wherein said nitride compound buffer layer
xIn
yGa
zThe thickness of N layer is 60-240nm, x+y+z=1 wherein, and 0＜x＜1,0≤y＜1,0＜z＜1, growth temperature is 900-1100 ℃.
AlN and Al in the wherein said superlattice
xGa
yThe thickness of N is respectively 3-12nm and 6-25nm, x+y=1 wherein, and 0≤x＜1,0＜y≤1, the growth temperature of superlattice is 900-1100 ℃.
Description of drawings
For further specifying technology contents of the present invention, below in conjunction with embodiment and accompanying drawing the present invention is done a detailed description, wherein:
Fig. 1 is the schematic flow sheet of the present invention's epitaxial growth GaN thin-film material on big mismatch substrate;
Fig. 2 is the method schematic diagram of the present invention's epitaxial growth GaN thin-film material on silicon substrate;
Embodiment
For describing technical scheme of the present invention in detail,, and, the present invention is described in further details with reference to accompanying drawing below in conjunction with specific embodiment.
As shown in Figure 1, 2, for provided by the invention a kind of on big mismatch substrate the method for the flawless GaN film of growing surface, comprise the steps:
Step 1: select a big mismatch substrate 01, this big mismatch substrate 01 is a silicon substrate;
Step 2: growth one deck nitride compound buffer layer 02 on big mismatch substrate 01, the lattice parameter of this nitride compound buffer layer 02 is littler than the lattice parameter of GaN epitaxial loayer, therefore can provide compression, alleviate subsequent step Grown GaN epitaxial loayer 05 in temperature-fall period because the tensile stress that silicon substrate and GaN epitaxial loayer thermal mismatching cause, and stop the melt back etching reaction, wherein said nitride compound buffer layer 02 comprises: an AlN layer 021 and the AlxInyGazN layer 022 of growing on the AlN layer, the thickness of the AlN layer 021 in the described nitride compound buffer layer 02 is 50-250nm, growth temperature is 900-1100 ℃, the thickness of AlxInyGazN layer 022 is 60-240nm in the described nitride compound buffer layer 02, x+y+z=1 wherein, 0＜x＜1,0≤y＜1,0＜z＜1, growth temperature are 900-1100 ℃;
Step 3: growth one deck GaN transition zone 03 on nitride compound buffer layer 02, the thickness of described GaN transition zone 03 is 0.1-0.4 μ m, growth temperature is 800-1100 ℃;
Step 4: one group of superlattice 04 of growth on GaN transition zone 03, these superlattice 04 can the release portion tensile stress, and energy filter threading dislocation, the material of wherein said superlattice 04 is AlN/AlxGayN, the thickness of AlN and AlxGayN is respectively 3-12nm and 6-25nm in the wherein said superlattice 04, x+y=1 wherein, 0≤x＜1,0＜y≤1, the growth temperature of superlattice 04 are 900-1100 ℃;
Step 5: growing GaN epitaxial loayer 05 on superlattice 04, the growth temperature of this GaN epitaxial loayer 05 is 800-1100 ℃, finishes the preparation of GaN film.
Described on big mismatch silicon substrate 01 method of growing nitride compound buffer layer 02, GaN transition zone 03, superlattice 04 and GaN epitaxial loayer 05 be to adopt the method for metal organic-matter chemical vapour phase epitaxy.
Embodiment
The invention provides a kind of on big mismatch substrate the method for the flawless GaN film of growing surface, comprise the steps:
Step 1: select a silicon substrate 01;
Step 2: growth one deck nitride compound buffer layer 02 on silicon substrate 01, this nitride compound buffer layer 02 can be alleviated lattice mismatch, and stops the melt back etching reaction, and this nitride compound buffer layer 02 comprises an AlN layer 021 and the Al that grows on the AlN layer
xIn
yGa
zN layer 022;
Step 3: the thick GaN transition zone 03 of growth one deck 0.2 μ m on nitride compound buffer layer 02, the growth temperature of this GaN transition zone 03 is 950 ℃;
Step 4: one group of superlattice 04 of growth on GaN transition zone 03, superlattice 04 comprise AlN and the thick Al of 6-25nm that 3-12nm is thick
xGa
yN, these superlattice 04 can the release portion tensile stresss, and can filter threading dislocation; Wherein said, x+y=1 wherein, 0≤x＜1,0＜y≤1, the growth temperature of superlattice is 1000 ℃.
Step 5: growing GaN epitaxial loayer 05 on superlattice 04, growth temperature is 950 ℃, finishes the preparation of GaN film.
The above; only be the embodiment among the present invention, but protection scope of the present invention is not limited thereto, anyly is familiar with the people of this technology in the disclosed technical scope of the present invention; the conversion that can expect easily or replacement all should be encompassed in of the present invention comprising within the scope.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Claims (10)
1. the method for the flawless GaN film of growing surface on big mismatch substrate comprises the steps:
Step 1: select a big mismatch substrate;
Step 2: growth one deck nitride compound buffer layer on big mismatch substrate, this nitride compound buffer layer can be alleviated lattice mismatch, and stops the melt back etching reaction;
Step 3: growth one deck GaN transition zone on the nitride compound buffer layer;
Step 4: one group of superlattice of growth on the GaN transition zone, these superlattice can the release portion tensile stress, and can filter threading dislocation;
Step 5: growing GaN epitaxial loayer on superlattice, finish the preparation of GaN film.
2. according to claim 1 on big mismatch substrate the method for the flawless GaN film of growing surface, wherein said big mismatch substrate is a silicon substrate.
3. according to claim 1 on big mismatch substrate the method for the flawless GaN film of growing surface, wherein said on big mismatch substrate the method for growing nitride compound buffer layer, GaN transition zone, superlattice and GaN epitaxial loayer be to adopt the method for metal organic-matter chemical vapour phase epitaxy.
4. according to claim 1 on big mismatch substrate the method for the flawless GaN film of growing surface, wherein said nitride compound buffer layer comprises: an AlN layer and the Al that grows on the AlN layer
xIn
yGa
zThe N layer.
5. according to claim 1 on big mismatch substrate the method for the flawless GaN film of growing surface, the thickness of wherein said GaN transition zone is 0.1-0.4 μ m, growth temperature is 800-1100 ℃.
6. according to claim 1 on big mismatch substrate the method for the flawless GaN film of growing surface, the material of wherein said superlattice is AlN/Al
xGa
yN.
7. according to claim 1 on big mismatch substrate the method for the flawless GaN film of growing surface, the growth temperature of wherein said GaN epitaxial loayer is 800-1100 ℃.
8. according to claim 4 on big mismatch substrate the method for the flawless GaN film of growing surface, the thickness of the AlN layer in the wherein said nitride compound buffer layer is 50-250nm, growth temperature is 900-1100 ℃.
9. according to claim 4 on big mismatch substrate the method for the flawless GaN film of growing surface, Al in the wherein said nitride compound buffer layer
xIn
yGa
zThe thickness of N layer is 60-240nm, x+y+z=1 wherein, and 0＜x＜1,0≤y＜1,0＜z＜1, growth temperature is 900-1100 ℃.
10. the method for the flawless GaN film of growing surface on the big mismatch substrate according to claim 6, AlN and Al in the wherein said superlattice
xGa
yThe thickness of N is respectively 3-12nm and 6-25nm, x+y=1 wherein, and 0≤x＜1,0＜y≤1, the growth temperature of superlattice is 900-1100 ℃.
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| CN102925968A (en) * | 2012-10-17 | 2013-02-13 | 中国电子科技集团公司第五十五研究所 | Strain control method of nitride single crystal thin film |
| CN105161578A (en) * | 2015-08-17 | 2015-12-16 | 中国科学院半导体研究所 | Growth method of GaN thin film on Si substrate and composite GaN thin film |
| CN105489723A (en) * | 2016-01-15 | 2016-04-13 | 厦门市三安光电科技有限公司 | Nitride bottom layer and manufacturing method thereof |
| CN105914128A (en) * | 2015-02-19 | 2016-08-31 | 汉民科技股份有限公司 | Semiconductor template and manufacturing method thereof |
| CN110752146A (en) * | 2019-10-28 | 2020-02-04 | 北京华进创威电子有限公司 | Method for growing gallium nitride film on silicon substrate |
| CN113874559A (en) * | 2019-03-13 | 2021-12-31 | 德州仪器公司 | Nitride semiconductor substrate and method for manufacturing same |
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Application publication date: 20100818 |