CN101752213B - Low temperature heat-treatment process for eliminating water mist on silicon chip surface - Google Patents
Low temperature heat-treatment process for eliminating water mist on silicon chip surface Download PDFInfo
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- CN101752213B CN101752213B CN 200810239405 CN200810239405A CN101752213B CN 101752213 B CN101752213 B CN 101752213B CN 200810239405 CN200810239405 CN 200810239405 CN 200810239405 A CN200810239405 A CN 200810239405A CN 101752213 B CN101752213 B CN 101752213B
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- silicon chip
- constant temperature
- chip surface
- ozone
- low temperature
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 93
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 89
- 239000010703 silicon Substances 0.000 title claims abstract description 89
- 238000010438 heat treatment Methods 0.000 title claims abstract description 31
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000003595 mist Substances 0.000 title claims abstract description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 30
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 27
- 238000001816 cooling Methods 0.000 claims abstract description 13
- 239000007789 gas Substances 0.000 claims abstract description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
- 150000002500 ions Chemical class 0.000 abstract description 6
- 238000009826 distribution Methods 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 3
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 239000002245 particle Substances 0.000 description 23
- 239000000779 smoke Substances 0.000 description 11
- 238000012856 packing Methods 0.000 description 6
- 230000002950 deficient Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000010923 batch production Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004441 surface measurement Methods 0.000 description 1
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- Formation Of Insulating Films (AREA)
Abstract
The invention relates to a low temperature heat-treatment process for eliminating water mist on a silicon chip surface, which comprises the following steps when treating a single chip: loading a single silicon chip into a furnace chamber, vacuumizing and replacing with nitrogen gas; heating to 100-300 DEG C at a heating rate of 10-30 DEG C/s, keeping at constant temperature, and introducing ozone gas in the constant temperature stage; and cooling to 80 DEG C at a cooling rate of 10-30 DEG C/s, and then taking out the silicon chip. When a plurality of chips are treated, the heating rate and the time of constant temperature are different from that of single chip treatment. The invention has the advantages that the purpose of adding ozone is to oxidize the residual organic substances and soluble ions on the surface with the ozone to obtain a better silicon chip surface; because the concentration of ozone added to the gas atmosphere and the heat treatment temperature are relatively low, the ozone can not affect and oxidize the silicon chip surface, or cause the oxidation film on the silicon chip surface to increase in thickness; and the ozone also can not affect the distribution of thermal donors in the silicon chip, nor affect the change of micro-roughness of the silicon chip surface, thus the silicon chip after the low temperature heat-treatment can be directly used.
Description
Technical field
The present invention relates to a kind of integrated circuit with silicon polished low temperature heat-treatment process, avoid silicon chip to be cleaned again even polishing once more to eliminate silicon chip surface " water smoke ".
Background technology
Along with the development of microelectric technique, the characteristic line breadth of photoetching is more and more littler, and people are also more and more stricter to the control of the particle of silicon chip surface minor diameter.Surface particles is important Control Parameter in the silicon chip manufacture process, is to guarantee silicon chip surface particle, and silicon chip will clean under super-clean environment, detect after through polishing, packs then.But in the storage of silicon chip, transportation, the leakage of external packing or encapsulation are preceding because ambient humidity is excessive, cause the steam in the silicon chip surface absorbed air, and condense at silicon chip surface, be shown as particle and mist defective at the laser particle calculating instrument, the diameter of particle is at 0.1-0.3um, and quantity reaches several ten thousand.But analyze the signal to noise ratio of these defectives, find these defectives make an uproar lowlyer frequently, belong to the rub-out signal of system.
The water smoke of silicon chip surface is caused by several factors, but the encapsulation of silicon chip plays main effect, and the standard packaging of silicon chip comprises three parts: drier, inner packing, external packing.Discover same silicon chip, if through well packing, silicon chip can preserve for 18 each months, if but " pinprick " arranged or breaking on the packing, the steam in the environment is just at silicon chip surface generation water smoke.Discover the silicon chip through strict packaging quality control, it is very stable that surface metal, particle, oxidated layer thickness keep.But find that also if use wrong packing method, a certain amount of organic substance and ion can appear at silicon chip surface, and the surface can produce the particle of 100,000 diameters at the 0.1-0.3 mu m range.
A kind of being interpreted as that water smoke forms: under higher levels of humidity, the surface of hydrophilic silicon chip has condensing of the small globule.These globules can cause the charged ion in water-soluble contamination of silicon chip surface (organic volatile and the residual water soluble ion of cleaning) and the environment to assemble the formation particle in the relevant position at silicon chip.The particle that the silicon chip surface water-solubility impurity causes mainly is subjected to the influence of charged ion in concentration, ambient humidity and the environment of impurities on surface of silicon chip.
The another kind that water smoke forms is interpreted as: hydrogen atom or hydrogen molecule are diffused in the wafer bulk in silicon wafer polishing and cleaning, and and foreign atom formation complex.Between the storage life, the hydrogen-dopant complex that is diffused into silicon chip inside decomposes, and is discharged into silicon chip surface at silicon chip.Be discharged into hydrogen meeting and the oxygen in the environment or the steam reaction of silicon chip, cause the silicide of silicon chip surface growth projection.When using the laser particle calculating instrument to scan these particles, the silicide meeting reflector laser of these protrusions is defaulted as particle by the laser particle calculating instrument.So the silicon chip behind scanning growth water smoke under the laser particle calculating instrument finds that several ten thousand granules appear in silicon chip surface.
Particle and water smoke that silicon chip surface is caused by the air humidity increase can clean by rinsing+normal SC1 and the SC2 of HF, and drying can effectively be removed then.But repeatedly clean the microroughness that generally all increases silicon chip surface.The invention provides the problem that a kind of low temperature heat-treatment process is eliminated to be increased by surface particles that ambient humidity causes.Not only eliminate surperficial water smoke, and can not increase the roughness and the metal contamination of silicon chip surface.
Summary of the invention
The purpose of this invention is to provide a kind of low temperature heat-treatment process of eliminating water mist on silicon chip surface, eliminate the water smoke defective of silicon chip surface, improve the utilance of silicon chip.
For reaching the purpose of foregoing invention, the present invention by the following technical solutions:
The present invention is a kind of low temperature heat-treatment process, and heat treatment can be carried out in the monolithic furnace chamber, also can be in horizontal chamber furnace (oven) batch process.The quantity of heat treated silicon chip and physical condition can be selected different heat treatment modes as required.Silicon chip for a small amount of can use monolithic to handle, and can reach like this to save time and purpose of energy saving.And, can in the heat treatment furnace chamber, adopt batch process technology for a large amount of silicon chips, i.e. the silicon chip of some (as 50,100 or more, the treating capacity of silicon chip is by the capacity decision of equipment) single treatment reaches fast and purpose of energy saving.
The low temperature heat-treatment process of this elimination water mist on silicon chip surface, when monolithic was handled, it may further comprise the steps:
(1), single silicon chip is written into furnace chamber, vacuumize, and with nitrogen replacement;
(2), be warmed up to 100～300 ℃ with 10～30 ℃/s programming rate, and constant temperature, the constant temperature stage feeds ozone gas;
(3), with 10～30 ℃/s cooling rate, cool to 80 ℃, take out silicon chip then.
The low temperature heat-treatment process of this elimination water mist on silicon chip surface, when multi-disc was handled, it may further comprise the steps:
(1), the air in the furnace chamber is discharged after the multi-disc silicon chip being written into furnace chamber;
(2), under the nitrogen protection state, with 10～20 ℃/s programming rate, be warmed up between 100～300 ℃, constant temperature then, the constant temperature stage feeds ozone gas;
(3), with the cooling of the cooling rate of 10～20 ℃/s, begin to cool to the time interval that silicon chip comes out of the stove and be decided to be 3 minutes.
Concrete process:
For monolithic heat treatment furnace chamber, furnace chamber is cold wall, and adopts the Halogen lamp LED heating, and energy is directly absorbed by silicon chip.Utilize the monolithic stove can well control temperature, programming rate and the thermostat temperature of silicon chip heating.After silicon chip is written into furnace chamber, the air displacement in the furnace chamber is become nitrogen environment by vacuumizing with nitrogen replacement.Be warmed up to 100-300 ℃ of constant temperature with 10-30 ℃/s programming rate then, cool to 80 ℃ with 10-30 ℃/s cooling rate behind the constant temperature certain hour, take out silicon chip then.Constant temperature time depends primarily on thermostat temperature, reduces thermostat temperature and will prolong constant temperature time accordingly.The general constant temperature time that adopts 5 minutes of 300 ℃ thermostat temperature, and during the temperature constant temperature below 300 ℃, constant temperature time was generally got 5-20 minute, concrete constant temperature time depends on thermostat temperature.In the process of whole intensification, constant temperature and cooling, need to feed nitrogen and do protective atmosphere.Ozone feeds in thermostatic process, and the volume ratio of the nitrogen use level the when consumption of feeding ozone and constant temperature is 2-10%.If the ratio of ozone is too high, can cause silicon chip surface oxide-film to occur, stop ozone after constant temperature finishes and feed.
For the batch process technology of a large amount of silicon chips, the air in the furnace chamber is discharged after silicon chip need being written into furnace chamber.Be warmed up to back constant temperature between 100-300 ℃ with 10-20 ℃/s programming rate then.Because the quantity of silicon chip is more in the horizontal chamber furnace (oven), need to reduce programming rate, to guarantee inner silicon chip thermally equivalent.Constant temperature time is mainly decided by thermostat temperature, reduces thermostat temperature and will prolong constant temperature time accordingly.Compare monolithic technology, the thermostat temperature of horizontal chamber furnace (oven) prolongs 3 minutes than the constant temperature time of monolithic stove, promptly 300 ℃ thermostat temperature needed constant temperature 8 minutes, and the constant temperature time of the temperature constant temperature below 300 ℃ is 8-23 minute, and concrete constant temperature time depends on thermostat temperature.Whole technical process finishes all to be in the protection of nitrogen gas state from being warmed up to cooling, feeds ozone when constant temperature begins, and the volume ratio of ozone and nitrogen is 2%-10%.If the ratio of ozone is too high, can cause silicon chip surface oxide-film to occur.After constant temperature finishes, stop ozone and feed, and lower the temperature with the cooling rate of 10-20 ℃/s.Need nitrogen flow in the temperature-fall period, to promote the dilution of cooling and ozone.Beginning to cool to the time interval that silicon chip comes out of the stove was decided to be about 3 minutes, to guarantee that ozone is not all blown away and can enter in the air by nitrogen in the furnace chamber.
Advantage of the present invention: can directly use through the silicon chip after the Low Temperature Heat Treatment,,, cause the silicon chip surface oxide thickness to increase so the existence of ozone can not influence the oxidized silicon chip surface because the concentration and the heat treatment temperature of adding ozone are all lower in the atmosphere.The purpose that adds ozone is to utilize ozone oxidation remaining organic substance in surface and soluble ion, to obtain better silicon chip surface.Because the heat treated temperature of this patent is lower,, also can not influence the variation of silicon chip surface microroughness so can not influence the distribution of hot alms giver in the silicon chip.
Embodiment
Embodiment 1
Extract 5 clean silicon chips, Low Temperature Heat Treatment is done in growth " water smoke " then under a kind of high humidity environment of simulation.Before using the laser particle calculating instrument to scan growth respectively, after the growth, and the distribution of Low Temperature Heat Treatment rear surface particle.
The high humidity environment of simulation is achieved in that the 1-5 groove that silicon chip is placed on film magazine.Simultaneously film magazine deposited silicon chip side bed hedgehopping.Splash into ultra-pure deionized water of 5ml then in the bottom of film magazine the 25th groove position, sealing is preserved then, guarantees in the seal process that the water of 5ml can not arrive silicon chip surface.Preserve after 2 days, unlock cassette is measured the particle of silicon chip surface, does Low Temperature Heat Treatment then in the monolithic stove.The Low Temperature Heat Treatment temperature is 300 ℃, and constant temperature time is 5 minutes, and the flow of nitrogen is 30SLM (standard liter/min), and ozone is 3SLM.Surface measurements distribution of particles once more after the processing.Table 1 has write down the primary granule quantity of silicon chip surface, the amounts of particles after water smoke stains, and amounts of particles after the Low Temperature Heat Treatment.
Annotate: general silicon chip film magazine can be put 25 silicon chips, and there are 25 grooves the two sides of film magazine, in order to isolate and the support silicon chip.Generally be slot in the industry.Number according to 1-25 these groove numberings front and back according to film magazine.Be slotl-slot25.
Table 1
Claims (4)
1. low temperature heat-treatment process of eliminating water mist on silicon chip surface, it is characterized in that: it may further comprise the steps:
(1), single silicon chip is written into furnace chamber, vacuumize, and with nitrogen replacement;
(2), be warmed up to 100～300 ℃ with 10～30 ℃/s programming rate, and constant temperature, the constant temperature stage feeds ozone gas, and feeding the consumption of ozone gas and the volume ratio of the nitrogen use level in constant temperature stage is 2～10%;
(3), with 10～30 ℃/s cooling rate, cool to 80 ℃, take out silicon chip then.
2. a kind of low temperature heat-treatment process of eliminating water mist on silicon chip surface according to claim 1, it is characterized in that: the constant temperature time in described (2) operation, 300 ℃ thermostat temperature adopts 5 minutes constant temperature time, and when being lower than 300 ℃ of temperature constant temperature, constant temperature time adopted 5～20 minutes.
3. low temperature heat-treatment process of eliminating water mist on silicon chip surface, it is characterized in that: it may further comprise the steps:
(1), the air in the furnace chamber is discharged after the multi-disc silicon chip being written into furnace chamber;
(2), under the nitrogen protection state, with 10～20 ℃/s programming rate, be warmed up between 100～300 ℃, constant temperature then, the constant temperature stage feeds ozone gas, the consumption volume ratio of ozone gas and nitrogen is 2～10%;
(3), with the cooling of the cooling rate of 10～20 ℃/s, begin to cool to the time interval that silicon chip comes out of the stove and be decided to be 3 minutes.
4. a kind of low temperature heat-treatment process of eliminating water mist on silicon chip surface according to claim 3, it is characterized in that: the constant temperature time in described (2) operation, 300 ℃ thermostat temperature adopts 8 minutes constant temperature time, and when being lower than 300 ℃ of temperature constant temperature, constant temperature time adopted 8～23 minutes.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200810239405 CN101752213B (en) | 2008-12-08 | 2008-12-08 | Low temperature heat-treatment process for eliminating water mist on silicon chip surface |
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| CN 200810239405 CN101752213B (en) | 2008-12-08 | 2008-12-08 | Low temperature heat-treatment process for eliminating water mist on silicon chip surface |
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| CN101752213A CN101752213A (en) | 2010-06-23 |
| CN101752213B true CN101752213B (en) | 2011-09-07 |
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| CN107256907A (en) * | 2017-06-20 | 2017-10-17 | 常州亿晶光电科技有限公司 | Improve the annealing process of PERC high-efficiency battery piece outward appearance small particles |
| CN111986984B (en) * | 2019-05-22 | 2024-04-19 | 有研半导体硅材料股份公司 | Method for reducing time fog generated on surface of silicon polishing sheet |
| CN114993028B (en) * | 2022-06-17 | 2023-05-30 | 高景太阳能股份有限公司 | Silicon wafer drying treatment method and system |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87106114A (en) * | 1986-09-02 | 1988-05-04 | 箭头工业用水公司 | Method for manufacturing integrated circuit |
| CN1127805A (en) * | 1994-08-26 | 1996-07-31 | Memc电子材料有限公司 | Pre-thermal treatment cleaning process |
| CN1870227A (en) * | 2006-06-09 | 2006-11-29 | 河北工业大学 | Control method for surface perfect of preparation region of silion single chip device |
| CN1870219A (en) * | 2006-06-09 | 2006-11-29 | 河北工业大学 | Control method for raising consistence of silicon epitaxial resistivity |
| CN101211774A (en) * | 2006-12-29 | 2008-07-02 | 斯尔瑞恩公司 | Method for cleaning silicon wafer |
-
2008
- 2008-12-08 CN CN 200810239405 patent/CN101752213B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87106114A (en) * | 1986-09-02 | 1988-05-04 | 箭头工业用水公司 | Method for manufacturing integrated circuit |
| CN1127805A (en) * | 1994-08-26 | 1996-07-31 | Memc电子材料有限公司 | Pre-thermal treatment cleaning process |
| CN1870227A (en) * | 2006-06-09 | 2006-11-29 | 河北工业大学 | Control method for surface perfect of preparation region of silion single chip device |
| CN1870219A (en) * | 2006-06-09 | 2006-11-29 | 河北工业大学 | Control method for raising consistence of silicon epitaxial resistivity |
| CN101211774A (en) * | 2006-12-29 | 2008-07-02 | 斯尔瑞恩公司 | Method for cleaning silicon wafer |
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Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |