CN101737662A - Method for manufacturing integrated packaged high-power LED illuminating light source, and LED illuminating lamp - Google Patents
Method for manufacturing integrated packaged high-power LED illuminating light source, and LED illuminating lamp Download PDFInfo
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- CN101737662A CN101737662A CN201010028116A CN201010028116A CN101737662A CN 101737662 A CN101737662 A CN 101737662A CN 201010028116 A CN201010028116 A CN 201010028116A CN 201010028116 A CN201010028116 A CN 201010028116A CN 101737662 A CN101737662 A CN 101737662A
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- 229920000647 polyepoxide Polymers 0.000 claims abstract description 14
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- 239000000463 material Substances 0.000 claims description 16
- 239000003085 diluting agent Substances 0.000 claims description 13
- 238000004020 luminiscence type Methods 0.000 claims description 12
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- 238000002360 preparation method Methods 0.000 claims description 7
- 235000015110 jellies Nutrition 0.000 claims description 6
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/90—Methods of manufacture
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to a method for manufacturing an integrated packaged high-power LED illuminating light source and an LED illuminating lamp. The manufacturing method comprises the following steps: (1) selecting a plurality of single white light LED wafers, putting the wafers on a substrate, and bonding the wafers into light-emitting chips by fulmargin; (2) connecting more than one light-emitting chips in series or/and in parallel to form a light source chip when reaching required power; (3) mixing the light source chip, substrate used epoxy resin glue, scattering agent and fluorescent powder for integral packaging; and (4) adhering the integrally packaged chips on a base plate and also arranging the integrally packaged chips on a heat radiator so as to arrange the combined components inside a lampshade to form the high-power LED illuminating light source, and then connecting the high-power LED illuminating light source with a control circuit to arrange the combined components inside a lamp casing to form the high-power LED illuminating lamp. The method for manufacturing the integrated packaged high-power LED illuminating light source and the LED illuminating lamp are characterized in that compared with existing LED multi-light spot illuminating light sources formed by connecting light spots which are separately packaged with single small lamp beads in series and in parallel, only one tenth packaging material is required; the light rays of the lamp is clear and soft and similar to natural daylight; the lamp has the advantages of uniform light emitting, no glare, no light pollution, no radiation, visual fatigue prevention and slow attenuation (less than 5 percent within three years); and compared with traditional incandescent lamps, sodium lamps and energy-saving lamps, the LED illuminating lamp also has the advantages of energy saving, long service life, environmental protection, high safety, solid state packaging, convenient transportation, and the like.
Description
(1) technical field: the LED lighting source preparation method and the LED illuminating lamp that the present invention relates to be used for light fixture.Belong to lighting device part class (F21V).
(2) background technology:
LED illumination has become the illumination development trend, with traditional lighting incandescent lamp, sodium vapor lamp, electricity-saving lamp ratio following advantage is arranged: energy-conservation, long-life, Environmental Safety, healthy light source, the big use of voltage pulsation are convenient etc.At present, LED illuminator commonly used all is to adopt commercially available individual packages to become the small lamp bulb luminous point of simple grain, one by one connection in series-parallel and make the lighting source of power demand, this led light source power is low, maximum can only be accomplished 2 watts, is equivalent to 20 watts of incandescent lamps, and room lighting is met the demands substantially; But to outdoor large power road lamp illumination, general traditional sodium vapor lamp is 250W-400W, and corresponding above-mentioned LED road-light light-source needs 20-40W, the small lamp bulb luminous point that needs too many (50 at least, at most more than 200).Therefore, there is following shortcoming in corresponding above-mentioned LED high-power illumination lamp: 1) because luminous point is too dazzling too much, have dazzle to produce, easily produce visual fatigue.2) luminous point is too many, the phenomenon of each point non-uniform light is arranged unavoidably, more because the serious luminous power asynchronous, each point of the light decay of each point is seriously uneven, has fragmentarily formed dazzle and light pollution so impinge upon easily to produce on the ground; 3) between each luminous point of multiple spot, can only take simple connection in series-parallel to connect: the luminous point voltage distribution of series connection is not to satisfy the needs of each point; The electric current that can not guarantee every circuit again in parallel is no more than the limit, so can not guarantee its life-span, just finds to have at least 20% street lamp middle part branch to extinguish after 1 year, and the illumination decay is serious; 4) each luminous point is an individual packages in many luminous points, and added scattering diluent and fluorescent material are too many, so light is natural, too white, and also can chemical radiation be arranged to human body above certain limit.
(3) summary of the invention
Method for manufacturing integrated packaged high-power LED illuminating light source provided by the invention and LED illuminating lamp, the multiple spot LED light source that overcomes small light pearl composition exactly produces dazzle and light pollution, the life-span is short, light decay is serious, light is natural, chemical radiation reaches problems such as power limited greatly, and its technical scheme is as follows:
Method for manufacturing integrated packaged high-power LED illuminating light source, its feature comprises the following steps: 1) watt level that requires according to illuminating lamp, select some single white light LEDs wafers 1, be put at a certain distance on the substrate 2 of nonmetallic materials making, with conduction jelly elargol 3 some single white light LEDs wafer bondings are fixedly become luminescence chip 4, each wafer power is 0.01-3 watt; 2) an above luminescence chip is connected or/and be connected in parallel, reach power demand; Become light source chip; 3) light source chip and substrate are carried out overall package with the mixture of epoxide-resin glue 6, scattering diluent and fluorescent material 7, become the overall package chip 8 of the length of side less than the square or rectangular of 40mm; 4) above-mentioned overall package chip is attached on the substrate 9 of metal material making; Be installed on the radiator 10 together with substrate again; In integral body is packed metal shade 11 at last, just make integrated packaged high-power LED illuminating light source 12, each light source power is greater than 30 watts.Light source power can be accomplished 30 watts-120 watts at present.
The LED illuminating lamp of making by above-mentioned method for manufacturing integrated packaged high-power LED illuminating light source, it is characterized in that this LED illuminating lamp comprises as the lower part: 1. in illuminating lamp lamp housing 13, be fixed with integrated packaged high-power LED illuminating light source 12 and the control circuit 14 that is connected with it; LED lighting source power is greater than 30 watts; 2. the LED lighting source comprises: be fixed with the overall package chip 8 on the substrate 9 that is attached to the metal material making in the metal shade 11; Substrate is installed on the radiator 10; 3. have in the overall package chip: the overall package layer that light source chip 5, substrate 2 and peripheral epoxide-resin glue, scattering diluent and fluorescent material mixture form; The overall package chip is the square or rectangular of the length of side less than 40mm; 4. light source chip is connected by power demand or/and be formed in parallel by an above luminescence chip 4; 5. have in the luminescence chip 4: place some single white light LEDs wafers 1 at regular intervals on the substrate 2 that nonmetallic materials are made, and have conduction jelly elargol 3 that some wafer bondings are fixed as whole blocks; The power of single white light LEDs wafer is 0.01-3 watt.
Beneficial effect of the present invention is:
1) LED illuminating lamp of the present invention is as follows than advantage with conventional light source: 1. energy-conservation; Energy consumption be incandescent lamp 1/10, high-pressure mercury lamp 1/6, electricity-saving lamp 1/4.2. the long-life reaches 100,000 hours.3. work under can and turn-offing at frequent starting, scope range of the fluctuation of voltage is big.4. environmental protection, safety: the no width of cloth is penetrated, and need not consider heat radiation, no greenhouse effects.5. solid-state encapsulation; Non-friable, not to be afraid of and to shake, easy transportation and installation are fit to high wind sand district and use.
2) led light source (also can be described as single-point type or 3 with interior high-power LED light source) according to the present invention with existing many luminous points led light source sampling test comparative result, obtains: 1. the present invention forms and makes color rendering properties of light source high; And because of the encapsulating material total amount reduces, scattering diluent and fluorescent material consumption are also few, and light is obviously soft, more near natural daylight, daylight (see figure 4).2. luminous evenly do not have dazzle and light pollution, and prevention visual fatigue is had positive role.3. decay is slow, and decay is no more than 5% within 3 years.4. because of chemical material total amounts such as the epoxide-resin glue of the required usefulness of structures shape of the present invention, scattering diluent, fluorescent material are existing below 1/10 of many luminous points light source consumption, so light do not have chemical radiation, more helps the health of eye and health.3) high-power LED illuminating light source of the present invention has solved the problem that existing multiple spot led light source can not be used for the relatively large outdoor lighting of power, and with going deep into of research and development, power can reach more than 120 watts, makes the LED semiconductor lighting become real high-power green illumination.
(4) description of drawings
Fig. 1 light source chip 6 schematic diagrames of the present invention, promptly LED lighting source preparation method step 1) 2) diagram;
Fig. 2 overall package chip 8 schematic diagrames of the present invention, i.e. LED lighting source preparation method step 3) diagram;
Fig. 3 integrated packaged high-power LED illuminating light source 12 schematic diagrames of the present invention; It is LED lighting source preparation method step 3) diagram;
Fig. 4 chip packaging effect of the present invention figure;
Fig. 5 embodiment of the invention 1 illuminating street lamp product theory structure schematic diagram.
(5) specific embodiment
Embodiment: see Fig. 1-Fig. 5,
The present embodiment method for manufacturing integrated packaged high-power LED illuminating light source, this LED lighting source is used for large power road lamp.Preparation method comprises the following steps:
1) sees Fig. 1, select six single white light LEDs wafers 1 that belong to semiconductor element, be put at a certain distance on the substrate 2 of organic material making, six single white light LEDs wafer bondings are fixedly become luminescence chip 4 with conduction jelly elargol 3; The power of single white light LEDs wafer 1 is 0.01-3 watt (company that can make semiconductor-LED wafer in the world specially buys).2) see Fig. 1 (giving an example), six luminescence chips 4 are connected (going here and there two) and in parallel (and three), reach power demand and be 90 watts light source chip 5.3) see Fig. 2, the mixture of light source chip 5 and substrate 2 usefulness epoxide-resin glues 6, scattering diluent and fluorescent material 7 is carried out overall package become square overall package chip 8; The every length of side B8=30-40mm of square.Epoxide-resin glue 6 can be processed by solid epoxy resin.1/10 of the multiple spot light source consumption that epoxide-resin glue, scattering diluent and fluorescent material total amount are made less than existing equal-wattage individual packages simple grain small lamp bulb; Scattering diluent and fluorescent material encapsulate even consumption less than 5% of epoxide-resin glue consumption.4) see Fig. 3, above-mentioned overall package chip 8 be attached on the substrate 9 that substrate plays heat conduction and supporting role, generally makes of aluminium sheet.The overall package chip of belt substrate is installed on the radiator 10: in integral body was packed metal shade 11 at last, metal shade adopted die casting aluminium, just makes integrated packaged high-power LED illuminating light source 12, and lighting source power is 90 watts.
The LED illuminating street lamp that said method is made comprises as the lower part: 1. see Fig. 5, in illuminating lamp lamp housing 13, be fixed with integrated packaged high-power LED illuminating light source 12 and the control circuit 14 that is connected with it.The following composition of control circuit: the moving gauge tap of street lamp AC power (AC) 220V catcher, transformation rectification circuit are direct current DC24V with the alternating current 220V rectification; Meet the two poles of the earth 8a and the 8b of lighting source 12 again through the constant current Drive and Control Circuit, light source power is 90 watts.This streetlamp housing 13 peripheral hardware lamp stands and support member 15.In lamp housing 13, need to adjust light source position by using.2. see Fig. 3, LED lighting source 12 following compositions: be fixed with the overall package chip 8 on the substrate 9 that is attached to the aluminium sheet making in the die casting aluminium lampshade 11; Substrate is installed on the radiator 10.The radiator 10.1 that radiator 10 can adopt pottery and aluminum alloy materials to make; Radiator 10 also can make the shape that matches with the lampshade inner surface shape or be affixed on the radiator 10.2 that lampshade inner surface combines together.See Fig. 4, reflecting component 11.1 is housed at overall package chip 8 and 11 on lampshade.Adorning convex lens with the light source mated position.3. see Fig. 2, have in the overall package chip 8: the overall package layer that light source chip 5, substrate 2 and peripheral epoxide-resin glue, scattering diluent and fluorescent material mixture form.The every length of side B8 of overall package chip is the square of 30mm-40mm.4. see Fig. 1, light source chip 5 carries out two series connection and three by six luminescence chips 4 by 90 watts of power demands and is formed in parallel.5. see Fig. 1, have in the luminescence chip 4: place six single white light LEDs wafers 1 at regular intervals on the substrate 2 that organic material is made, and have conduction jelly elargol 3 that six wafer bondings are fixed as whole blocks.The power of single white light LEDs wafer 1 is 2.5 watts.
Claims (5)
1. method for manufacturing integrated packaged high-power LED illuminating light source, its feature comprises the following steps:
1) watt level that requires according to illuminating lamp, select some single white light LEDs wafers (1), be put at a certain distance on the substrate (2) of nonmetallic materials making, with conduction jelly elargol (3) some single white light LEDs wafer bondings are fixedly become luminescence chip (4), each wafer power is 0.01-3 watt;
2) an above luminescence chip (4) is connected or/and be connected in parallel, reach power demand; Become light source chip (5);
3) light source chip (5) and substrate are carried out overall package with the mixture of epoxide-resin glue 6, scattering diluent and fluorescent material 7, become the overall package chip (8) of the length of side less than the square or rectangular of 40mm;
4) above-mentioned overall package chip is attached on the substrate (9) of metal material making; Be installed on the radiator (10) together with substrate again; In integral body is packed metal shade (11) at last, just make integrated packaged high-power LED illuminating light source (12), each LED lighting source power is greater than 30 watts.
2. by the described LED lighting source of claim 1 preparation method, it is characterized in that 1/10 of multiple spot light source consumption that epoxide-resin glue, scattering diluent and fluorescent material total amount are made less than existing equal-wattage individual packages simple grain small lamp bulb; Scattering diluent and fluorescent material consumption are less than 5% of epoxide-resin glue consumption.
3. the LED illuminating lamp of making by the described LED lighting source of claim 1 preparation method is characterized in that this LED illuminating lamp comprises as the lower part:
1. in illuminating lamp lamp housing (13), be fixed with integrated packaged high-power LED illuminating light source (12) and the control circuit that is connected with it (14); Each LED lighting source (12) power is greater than 30 watts;
2. LED lighting source (12) comprising: be fixed with the overall package chip (8) on the substrate (9) that is attached to the metal material making in the metal shade (11); Substrate is installed on the radiator (10);
3. have in the overall package chip (8): the overall package layer that light source chip (5), substrate (2) and peripheral epoxide-resin glue, scattering diluent and fluorescent material mixture form; The overall package chip is the square or rectangular of the length of side less than 40mm;
4. light source chip (5) is connected by power demand or/and be formed in parallel by an above luminescence chip (4);
5. have in the luminescence chip (4): the substrate (2) that nonmetallic materials are made is gone up and is placed some single white light LEDs wafers at regular intervals (1), and has conduction jelly elargol (3) that some wafer bondings are fixed as whole blocks; The power of single white light LEDs wafer is 0.01-3 watt.
4. by the described LED illuminating lamp of claim 3, it is characterized in that light source power is 30 watts-120 watts; The overall package chip is that the length of side is the square of 30mm-40mm.
5. by claim 3,4 described LED illuminating lamps, the shape that it is characterized in that radiator (10) matches or is affixed on lampshade inner surface with the lampshade inner surface shape and combines together.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010100281168A CN101737662B (en) | 2010-01-18 | 2010-01-18 | Method for manufacturing integrated packaged high-power LED illuminating light source, and LED illuminating lamp |
| PCT/CN2010/071556 WO2011085568A1 (en) | 2010-01-18 | 2010-04-03 | Manufacturing method for integrally packaged high-power led illumination source and led illumination lamp |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010100281168A CN101737662B (en) | 2010-01-18 | 2010-01-18 | Method for manufacturing integrated packaged high-power LED illuminating light source, and LED illuminating lamp |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101737662A true CN101737662A (en) | 2010-06-16 |
| CN101737662B CN101737662B (en) | 2011-05-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010100281168A Expired - Fee Related CN101737662B (en) | 2010-01-18 | 2010-01-18 | Method for manufacturing integrated packaged high-power LED illuminating light source, and LED illuminating lamp |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN101737662B (en) |
| WO (1) | WO2011085568A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102339820A (en) * | 2011-09-19 | 2012-02-01 | 昆山隆泰电子有限公司 | Integrated encapsulated LED (light-emitting diode) lamp bulb |
| CN102544258A (en) * | 2010-11-30 | 2012-07-04 | 丰田合成株式会社 | Light-emitting device and producing method thereof |
| CN102569284A (en) * | 2012-03-16 | 2012-07-11 | 广东科立盈光电技术有限公司 | Novel light-emitting diode (LED) light-emitting chip and LED lamp formed by assembling LED light-emitting chips |
| CN105400470A (en) * | 2015-12-01 | 2016-03-16 | 杭州新湖电子有限公司 | Packaging adhesive for LED white-light nixie tube and preparation method of packaging adhesive |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100736891B1 (en) * | 2006-01-13 | 2007-07-10 | 서울반도체 주식회사 | Led lamp |
| CN100489386C (en) * | 2007-09-20 | 2009-05-20 | 胡家培 | Non-reflection high light extracting rate unit WLED power expanding type high power WLED light source |
| CN201133636Y (en) * | 2007-12-03 | 2008-10-15 | 林复基 | Large power flat-plate LED heat radiating device |
| CN100590869C (en) * | 2008-06-04 | 2010-02-17 | 深圳市科纳实业有限公司 | High-power LED encapsulation structure |
| CN201273472Y (en) * | 2008-09-01 | 2009-07-15 | 曾义诚 | Improved LED lamp structure |
| CN201255334Y (en) * | 2008-09-02 | 2009-06-10 | 东莞市福地电子材料有限公司 | LED street lamp |
| CN101404317A (en) * | 2008-11-12 | 2009-04-08 | 鹤山丽得电子实业有限公司 | High-power white light LED packaging method |
| CN201359209Y (en) * | 2008-11-25 | 2009-12-09 | 董丽霞 | Flat-plate type lens integrated LED light source |
-
2010
- 2010-01-18 CN CN2010100281168A patent/CN101737662B/en not_active Expired - Fee Related
- 2010-04-03 WO PCT/CN2010/071556 patent/WO2011085568A1/en active Application Filing
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544258A (en) * | 2010-11-30 | 2012-07-04 | 丰田合成株式会社 | Light-emitting device and producing method thereof |
| CN102339820A (en) * | 2011-09-19 | 2012-02-01 | 昆山隆泰电子有限公司 | Integrated encapsulated LED (light-emitting diode) lamp bulb |
| CN102569284A (en) * | 2012-03-16 | 2012-07-11 | 广东科立盈光电技术有限公司 | Novel light-emitting diode (LED) light-emitting chip and LED lamp formed by assembling LED light-emitting chips |
| CN105400470A (en) * | 2015-12-01 | 2016-03-16 | 杭州新湖电子有限公司 | Packaging adhesive for LED white-light nixie tube and preparation method of packaging adhesive |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101737662B (en) | 2011-05-04 |
| WO2011085568A1 (en) | 2011-07-21 |
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