CN101656246A - Chip stacking packaging structure of substrate with opening and packaging method thereof - Google Patents
Chip stacking packaging structure of substrate with opening and packaging method thereof Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 157
- 238000000034 method Methods 0.000 title claims description 23
- 238000004806 packaging method and process Methods 0.000 title abstract description 11
- 230000000149 penetrating effect Effects 0.000 claims abstract description 9
- 239000012790 adhesive layer Substances 0.000 claims description 56
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 229920001187 thermosetting polymer Polymers 0.000 claims description 2
- 239000002313 adhesive film Substances 0.000 claims 1
- 239000002861 polymer material Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/4824—Connecting between the body and an opposite side of the item with respect to the body
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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Abstract
Description
技术领域 technical field
本发明有关一种封装结构及其方法,特别是有关一种具有开口的基板的芯片堆叠封装结构及其封装方法。The present invention relates to a package structure and method thereof, in particular to a chip stack package structure with an opening substrate and a package method thereof.
背景技术 Background technique
具有开口的基板的半导体封装结构是较先进的封装技术,其特点是:在基板上形成至少一个通孔(opening),且允许芯片设置且覆盖住基板的通孔,并通过穿过通孔的打线接合的导线与基板电性连接。此种设置的方式可有效的缩短打线接合的导线的长度,借此在基板及芯片之间形成电性连接。现有的具有开口的基板的封装结构如图1所示,其中基板100具有一上表面及一下表面且具有一开口102贯穿基板100。接着,一芯片120以主动面(未在图中表示)朝下的方式且其主动面上的焊垫122曝露于基板100的开口102。紧接着,多条导线130以打线接合(bondingwires)的方式通过基板100的开口102连接至曝露于开口102的芯片120的焊垫122,借此电性连接基板100的下表面与芯片120的主动面。接着,一封装体140通过印刷的方式形成在基板100的下表面上用以包覆导线130以及将基板100的开口102密封住。The semiconductor packaging structure with an open substrate is a more advanced packaging technology, which is characterized by: at least one opening is formed on the substrate, and allows the chip to be placed and cover the through hole of the substrate, and pass through the through hole. The wires bonded by wires are electrically connected to the substrate. Such an arrangement can effectively shorten the length of wires for wire bonding, thereby forming an electrical connection between the substrate and the chip. A conventional packaging structure of a substrate with openings is shown in FIG. 1 , wherein a
然而,由于在封装体(尤其是通过树脂材料所形成的封装体)140及与封装体140接触的芯片120之间的热膨胀系数(CTE,coefficient of thermal expansion)的不匹配,在高温的条件下,例如封装体140的固化(curing)步骤或是后续的热循环步骤,特别是在芯片120的部份因为来自于封装体140的热应力(thermal stress)会产生芯片崩裂(chip-crack)的问题,而相对于较长且较大尺寸的芯片来说,其可靠度以及良率都会降低。此外,在封装体140的形成过程中,其焊线接合的导线会与树脂材料以模流的方式形成封装体时接触,使得会有短路的问题。However, due to the mismatch of the coefficient of thermal expansion (CTE, coefficient of thermal expansion) between the package body (especially the package body formed by the resin material) 140 and the
发明内容 Contents of the invention
鉴于以上的问题,本发明的主要目的在于提供一种利用具有开口的基板进行芯片的堆叠,借以减少整个芯片堆叠结构的封装厚度。In view of the above problems, the main purpose of the present invention is to provide a substrate with openings for chip stacking, thereby reducing the packaging thickness of the entire chip stacking structure.
根据上述的目的,本发明揭露一种芯片堆叠结构,包含:一基板,具有一正面及一背面且分别配置有一线路布局及具有一开口贯穿基板;一第一芯片,具有一主动面及一背面,其中第一芯片的主动面朝下,且通过一第一黏着层将第一芯片的部份背面贴附在基板的背面上,并曝露出未被第一黏着层覆盖的第一芯片的部份背面;第二芯片,具有一主动面及一背面,其中第二芯片的主动面朝上,且通过一第二黏着层将第二芯片的背面固定在第一芯片的背面上;多条第一导线,用以电性连接第一芯片的主动面及基板的背面;多条第二导线,用以电性连接第二芯片的主动面及基板的正面;第一封装体,用以包覆第一芯片、第一黏着层、多条第一导线及基板的背面;一第二封装体,用以包覆第二芯片、第二黏着层、多条第二导线、第一芯片的部份背面及基板的部份正面;及多个导电元件,其设置在基板的正面上。According to the above purpose, the present invention discloses a chip stacking structure, comprising: a substrate having a front surface and a back surface respectively configured with a circuit layout and having an opening penetrating the substrate; a first chip having an active surface and a back surface , wherein the active surface of the first chip faces downward, and a part of the back surface of the first chip is attached to the back surface of the substrate through a first adhesive layer, and the part of the first chip not covered by the first adhesive layer is exposed. a second chip with an active surface and a back surface, wherein the active surface of the second chip faces upwards, and the back surface of the second chip is fixed on the back surface of the first chip through a second adhesive layer; multiple strips A wire is used to electrically connect the active surface of the first chip and the back surface of the substrate; multiple second wires are used to electrically connect the active surface of the second chip and the front surface of the substrate; the first package is used to cover the The first chip, the first adhesive layer, multiple first wires, and the back surface of the substrate; a second package, used to cover the second chip, the second adhesive layer, multiple second wires, and part of the first chip a back side and a portion of the front side of the substrate; and a plurality of conductive elements disposed on the front side of the substrate.
本发明还揭露另一芯片堆叠结构,包含:一基板,具有一正面及一背面且分别配置有一线路布局及具有一开口贯穿基板;一第一芯片,具有一主动面及一背面,其中第一芯片的主动面朝下,且将第一芯片的背面通过一黏着层贴附在基板的部份背面上且黏着层覆盖住开口的一表面;一第二芯片,具有一主动面及一表面,其中第二芯片的主动面朝上,且第二芯片的背面通过黏着层固定在第一芯片的背面上;多条第一导线,用以电性连接第一芯片的主动面及基板的背面;多条第二导线,用以电性连接第二芯片的主动面及基板的正面;第一封装体,用以包覆第一芯片、黏着层、多条第一导线及基板的背面;第二封装体,用以包覆第二芯片、部份黏着层、多条第二导线及基板的部份正面;多个导电元件,其设置在基板的正面上。The present invention also discloses another chip stacking structure, comprising: a substrate having a front surface and a back surface respectively configured with a circuit layout and having an opening penetrating the substrate; a first chip having an active surface and a back surface, wherein the first The active surface of the chip faces downward, and the back surface of the first chip is attached to a part of the back surface of the substrate through an adhesive layer, and the adhesive layer covers a surface of the opening; a second chip has an active surface and a surface, Wherein the active surface of the second chip faces upward, and the back of the second chip is fixed on the back of the first chip through an adhesive layer; a plurality of first wires are used to electrically connect the active surface of the first chip and the back of the substrate; A plurality of second wires are used to electrically connect the active surface of the second chip and the front surface of the substrate; the first package is used to cover the first chip, the adhesive layer, a plurality of first wires and the back surface of the substrate; the second The packaging body is used to cover the second chip, part of the adhesive layer, a plurality of second wires and part of the front surface of the substrate; a plurality of conductive elements are arranged on the front surface of the substrate.
根据上述的芯片堆叠结构,本发明揭露一种形成芯片堆叠结构的方法,包含:提供一基板具有一正面及一背面,且分别配置有一线路布局,及具有一开口贯穿基板的正面及背面;贴附第一芯片在基板的部份背面上,是将第一芯片的主动面朝下,第一芯片的背面通过一第一黏着层贴附在基板的部份背面上且于开口曝露出第一芯片的未被第一黏着层所覆盖的第一芯片的背面;贴附第二芯片在第一芯片的背面上,是将第二芯片的主动面朝上,且第二芯片的一背面通过一第二黏着层贴附在未被第一黏着层所覆盖的第一芯片的背面上;形成多条第一导线,以电性连接第一芯片的主动面及基板的背面;形成多条第二导线,以电性连接第二芯片的主动面及基板的正面;形成一第一封装体,用以包覆第一芯片、第一黏着层、多条第一导线及基板的背面;形成一第二封装体,用以包覆第二芯片、第二黏着层、第一芯片的部份背面、多条第二导线及基板的部份正面;及形成多个导电元件,是形成在基板的正面上。According to the above-mentioned chip stack structure, the present invention discloses a method for forming a chip stack structure, comprising: providing a substrate with a front surface and a back surface, respectively configured with a circuit layout, and having an opening penetrating through the front surface and the back surface of the substrate; Attaching the first chip on a part of the back of the substrate is to place the active surface of the first chip downward, and the back of the first chip is pasted on the part of the back of the substrate through a first adhesive layer and exposes the first chip in the opening. The back side of the first chip not covered by the first adhesive layer of the chip; attaching the second chip on the back side of the first chip is to make the active side of the second chip face up, and a back side of the second chip passes through a The second adhesive layer is attached on the back surface of the first chip not covered by the first adhesive layer; a plurality of first wires are formed to electrically connect the active surface of the first chip and the back surface of the substrate; a plurality of second wires are formed The wire is used to electrically connect the active surface of the second chip and the front surface of the substrate; a first package is formed to cover the first chip, the first adhesive layer, a plurality of first wires and the back surface of the substrate; a first package is formed The second package is used to cover the second chip, the second adhesive layer, part of the back of the first chip, a plurality of second wires and part of the front of the substrate; and form a plurality of conductive elements, which are formed on the front of the substrate superior.
本发明再揭露一种形成芯片堆叠的方法,包含:提供一基板,其具有一正面及一背面且分别配置有一线路布局,及具有一开口贯穿基板的正面及背面;贴附一第一芯片在基板的部份背面上,是将第一芯片的主动面朝下,将第一芯片的一背面通过一黏着层贴附在基板的背面;贴附一第二芯片在第一芯片的背面上,是将第二芯片的一主动面朝上且将第二芯片的一背面通过黏着层固接在第一芯片的背面上;形成多条第一导线以电性连接第一芯片的主动面及基板的背面;形成多条第二导线以电性连接第二芯片的主动面及基板的正面;形成一第一封装体用以包覆第一芯片、黏着层、多条第一导线及基板的背面;形成第二封装体用以包覆第二芯片、黏着层、第一芯片的部份背面、多条第二导线及基板的部份正面;及形成多个导电元件,是将多个导电元件形成在基板的正面上。The present invention further discloses a method for forming a chip stack, comprising: providing a substrate having a front surface and a back surface respectively configured with a circuit layout, and having an opening penetrating through the front surface and the back surface of the substrate; attaching a first chip on the On part of the back of the substrate, the active surface of the first chip is facing downward, and a back of the first chip is attached to the back of the substrate through an adhesive layer; a second chip is attached to the back of the first chip, An active surface of the second chip faces upward and a back surface of the second chip is fixed on the back surface of the first chip through an adhesive layer; a plurality of first wires are formed to electrically connect the active surface of the first chip and the substrate form a plurality of second wires to electrically connect the active surface of the second chip and the front side of the substrate; form a first package to cover the first chip, the adhesive layer, a plurality of first wires and the back side of the substrate ; forming a second package to cover the second chip, the adhesive layer, a part of the back of the first chip, a plurality of second wires and a part of the front of the substrate; and forming a plurality of conductive elements, which is a plurality of conductive elements formed on the front side of the substrate.
附图说明 Description of drawings
为能更清楚理解本发明的目的、构造、特征、及其功能,以下将配合附图对本发明的较佳实施例进行详细说明,其中:For a clearer understanding of the purpose, structure, features, and functions of the present invention, preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings, wherein:
图1是根据现有技术,表示具有开口的基板的封装结构的示意图;FIG. 1 is a schematic diagram showing a package structure of a substrate having openings according to the prior art;
图2A至图2F是根据本发明的技术,表示具有开口的基板的芯片堆叠封装结构形成的各步骤示意图;及2A to 2F are schematic diagrams showing various steps of forming a chip stack package structure with a substrate having an opening according to the technology of the present invention; and
图3A至图3F是根据本发明的另一实施例,表示具有开口的基板的芯片堆叠封装结构形成的各步骤示意图。3A to 3F are schematic diagrams illustrating various steps of forming a chip stack package structure on a substrate with openings according to another embodiment of the present invention.
具体实施方式 Detailed ways
本发明在此所探讨的方向为一种封装结构及其封装方法,是提供具有开口的基板,使得不同尺寸的芯片可以覆晶方式朝向开口贴附在基板上,然后进行芯片堆叠的方法。为了能彻底地了解本发明,将在下列的描述中提出详尽的步骤及其组成。显然地,本发明的施行并未限定芯片封装的方式中为本领域技术的技术人员所熟悉的特殊细节。对于本发明的较佳实施例,则会详细描述如下,然而除了这些详细描述之外,本发明还可以广泛地施行在其它的实施例中,且本发明的范围不受限定,而是以所附的本申请权利要求所限定的范围为准。The direction that the present invention discusses here is a packaging structure and its packaging method, which is to provide a substrate with an opening so that chips of different sizes can be flip-chip attached to the substrate facing the opening, and then the chips are stacked. In order to provide a thorough understanding of the present invention, detailed steps and components thereof will be set forth in the following description. Clearly, the practice of the invention is not limited to specific details of the manner in which chips are packaged that are familiar to those skilled in the art. For the preferred embodiments of the present invention, it will be described in detail as follows, but in addition to these detailed descriptions, the present invention can also be widely implemented in other embodiments, and the scope of the present invention is not limited, but in the following The scope defined by the appended claims of this application shall prevail.
图2A至图2B表示具有开口的基板的芯片堆叠封装结构形成的各步骤示意图。首先,参考图2A,先提供一基板10,其具有一正面及一背面,且在正面及背面分别设置有一线路布局(layout)(未在图中表示),在此,在基板10的正面与背面是可以配置相同或是不相同的线路布局,而在本实施例中,是用以堆叠不同尺寸及功能的芯片为其主要的发明技术特征,因此,是以具有不同线路布局的基板10做为实施例的说明。然而,要说明的是,基板10的线路布局的形成及其结构并非本发明的技术特征,仅以应用具有线路布局的基板做为本发明的实施例说明,因此不再多加陈述。2A to 2B are schematic diagrams showing various steps of forming a chip stack package structure with a substrate having openings. First, with reference to FIG. 2A , a
接着,是利用半导体工艺,在基板10的上方形成一图案化的光致抗蚀剂层(未在图中表示);接着进行显影及蚀刻,以移除部份基板,而形成一开口12贯穿基板10的正面及背面。在此,基板10的材料可以是单层或是多层的电路板或是金属薄板(metal foil)。Next, a patterned photoresist layer (not shown) is formed on the
紧接着,图2B是表示将一第一芯片贴附在基板的背面的示意图。在图2B中,是先提供第一芯片30,其具有一主动面其一背面,且于主动面上具有多个焊垫32。接着,是将第一芯片30的主动面朝下,并且通过第一黏着层20将第一芯片30的背面对准基板10的开口12,将第一芯片30的部份背面固着在基板10的背面上,并且于基板10的开口12曝露出第一芯片30的部份背面。在此实施例中,第一黏着层20可以是二阶段热固胶(B-stage)。Next, FIG. 2B is a schematic diagram illustrating attaching a first chip on the back surface of the substrate. In FIG. 2B , the
接下来,请参考图2C,其是表示将第二芯片堆叠在第一芯片上的示意图。在图2C中,是提供一第二芯片50,其具有一主动面及一背面,且于主动面上具有多个焊垫52。接着,将第二芯片50的主动面朝上,其第二芯片50的背面通过一第二黏着层40贴附在第一芯片30曝露于基板10的开口12的背面上,以形成一芯片堆叠结构。在此实施例中,第二黏着层可以是芯片黏着胶膜(die attach film)或是环氧树脂(epoxy)。此外,在本实施例中,第一芯片30与第二芯片50是不同功能的芯片,借此以增加芯片堆叠封装结构的应用范围。Next, please refer to FIG. 2C , which is a schematic diagram of stacking the second chip on the first chip. In FIG. 2C , a
接着,请参考图2D,其是表示将第一芯片、第二芯片分别与基板电性连接的示意图。在图2D中,是先将贴附在基板10上的第一芯片30与第二芯片50上下翻转,使得第一芯片30的主动面朝上而第二芯片50的主动面朝下。接着,利用打线接合(bonding wire)的方式,将多条第一导线60的两端,分别形成在第一芯片30的主动面的多个焊垫32及基板10的背面上,且在基板10的背面上配置有一线路布局,因此,利用多条第一导线60可以电性连接第一芯片30及基板10。然后,再将第一芯片30与第二芯片50下上翻转,使得第一芯片30的主动面朝下及第二芯片50的主动面朝上。同样地,利用打线接合的方式,将多条第二导线70的两端分别形成在第二芯片50的主动面的多个焊垫52及基板10的正面上。由于,在基板10的正面上同样配置有一线路布局,使得多条第二导线70可以电性连接第二芯片50及基板10。另外,要说明的是,在本发明的实施例中,也可以先在第二芯片50上形成多条第二导线70然后再将第二芯片50与第一芯片30上下倒转,再在第一芯片30上形成多条第一导线60。Next, please refer to FIG. 2D , which is a schematic diagram illustrating electrically connecting the first chip and the second chip to the substrate respectively. In FIG. 2D , the
紧接着,参考图2E,其是表示形成封装体在基板上的示意图。在图2E中,首先将一高分子材料(未在图中表示)注入第二芯片50的四周及基板10的开口12内。接着,对此高分子材料进行一烘烤程序(bake process),使得高分子材料固化以形成一封装体80A以包覆住第二芯片50、第二黏着层40、多条第一导线60且覆盖住基板10的开口12及基板10的部份正面上。然后,将第一芯片30与第二芯片50上下翻转,使得第一芯片30的主动面朝上。同样地,再将另一高分子材料注入第一芯片30的四周。接下来,对高分子材料进行一烘烤程序,使得高分子材料故化以形成另一封装体80B以包覆住第一芯片30、多条第一导线60以及基板10的背面。在此实施例中,高分子材料可以是硅胶、环氧树脂、丙烯酸(acrylic)、及苯环丁烯(BCB)等材料。Next, refer to FIG. 2E , which is a schematic diagram showing the formation of the package on the substrate. In FIG. 2E , first, a polymer material (not shown in the figure) is injected into the periphery of the
紧接着,参考图2F,其是表示将多个导电元件形成在基板的正面的示意图。在图2F中,在基板10的正面上是阵列排列方式,形成多个导电元件90,例如金属凸块(metal bump)或是锡球(solder ball),即可完成芯片堆叠的封装结构。Next, refer to FIG. 2F , which is a schematic diagram illustrating forming a plurality of conductive elements on the front surface of the substrate. In FIG. 2F , the front surface of the
另外,图3A至图3F是表示本发明的另一芯片堆叠的封装结构的实施例。在图3A中,是先提供一基板10,其具有一正面及一背面,且在正面及背面分别设置有一线路布局(layout)(未在图中表示),在此,在基板10的正面与背面可以配置相同或是不相同的线路布局,而在本实施例中,是用以堆叠不同尺寸及功能的芯片为其主要的发明技术特征,因此,是以具有不同线路布局的基板10做为实施例的说明。然而,要说明的是,基板10的线路布局的形成及其结构并非本发明的技术特征,仅以应用具有线路布局的基板做为本发明的实施例说明,因此不再多加陈述。In addition, FIG. 3A to FIG. 3F show another embodiment of the chip stack packaging structure of the present invention. In FIG. 3A, a
接着,是利用半导体工艺,在基板10的上方形成一图案化的光致抗蚀剂层(未在图中表示);接着进行显影及蚀刻,以移除部份基板,而形成一开口12贯穿基板10的正面及背面。在此,基板10的材料可以是单层或是多层的电路板或是金属薄板(metal foil)。Next, a patterned photoresist layer (not shown) is formed on the
紧接着,图3B是表示将一第一芯片贴附在基板的背面的示意图。在图3B中,是先提供第一芯片30,其具有一主动面其一背面,且于主动面上具有多个焊垫32。接着,是将第一芯片30的主动面朝下,并且通过黏着层20B将第一芯片30的背面对准基板10的开口12,将第一芯片30的部份背面固着在基板10的部份背面上,并且覆盖住基板10的开口12而曝露出黏着层20B。在此实施例中,黏着层20B可以是芯片黏着胶膜(DAF;die attach film)或是环氧树脂(epoxy)。Next, FIG. 3B is a schematic diagram illustrating attaching a first chip on the back surface of the substrate. In FIG. 3B , the
接下来,请参考图3C,其是表示将第二芯片堆叠在第一芯片上的示意图。在图3C中,是提供一第二芯片50,其具有一主动面及一背面,且于主动面上具有多个焊垫52。接着,将第二芯片50的主动面朝上,其第二芯片50的背面通过黏着层20B固着在第一芯片30的背面上,以形成一芯片堆叠结构。在此实施例中,第一芯片30与第二芯片50是不同功能的芯片,借此以增加芯片堆叠封装结构的应用范围。Next, please refer to FIG. 3C , which is a schematic diagram of stacking the second chip on the first chip. In FIG. 3C , a
接着,请参考图3D,其是表示将第一芯片、第二芯片分别与基板电性连接的示意图。在图3D中,是先将贴附在基板10上的第一芯片30与第二芯片50上下翻转,使得第一芯片30的主动面朝上而第二芯片50的主动面朝下。接着,利用打线接合(bonding wire)的方式,将多条第一导线60的两端,分别形成在第一芯片30的主动面的多个焊垫32及基板10的背面上,且在基板10的背面上配置有一线路布局,因此,利用多条第一导线60可以电性连接第一芯片30及基板10。然后,再将第一芯片30与第二芯片50下上翻转,使得第一芯片30的主动面朝下及第二芯片50的主动面朝上。同样地,利用打线接合的方式,将多条第二导线70的两端分别形成在第二芯片50的主动面的多个焊垫52及基板10的正面上。由于,在基板10的正面上同样配置有一线路布局,使得多条第二导线70可以电性连接第二芯片50及基板10。另外,要说明的是,在本发明的实施例中,也可以先在第二芯片50上形成多条第二导线70然后再将第二芯片50与第一芯片30上下倒转,再在第一芯片30上形成多条第一导线60。Next, please refer to FIG. 3D , which is a schematic diagram illustrating electrically connecting the first chip and the second chip to the substrate respectively. In FIG. 3D , the
紧接着,参考图3E,其是表示形成封装体在基板上的示意图。在图3E中,首先将一高分子材料(未在图中表示)注入第二芯片50的四周及基板10的开口12内。接着,对此高分子材料进行一烘烤程序(bake process),使得高分子材料固化以形成一封装体80A以包覆住第二芯片50、曝露于开口12的黏着层20B、多条第一导线60且覆盖住基板10的开口12及基板10的部份正面上。然后,将第一芯片30与第二芯片50上下翻转,使得第一芯片30的主动面朝上。同样地,再将另一高分子材料注入第一芯片30的四周。接下来,对高分子材料进行一烘烤程序,使得高分子材料故化以形成另一封装体80B以包覆住第一芯片30、部份黏着层20B、多条第一导线60以及基板10的背面。在此实施例中,高分子材料可以是硅胶、环氧树脂、丙烯酸(acrylic)、及苯环丁烯(BCB)等材料。Next, refer to FIG. 3E , which is a schematic diagram showing the formation of the package on the substrate. In FIG. 3E , first, a polymer material (not shown in the figure) is injected into the periphery of the
紧接着,参考图3F,其是表示将多个导电元件形成在基板的正面的示意图。在图3F中,在基板10的正面上是阵列排列方式,形成多个导电元件90,例如金属凸块(metal bump)或是锡球(solder ball),即可完成芯片堆叠的封装结构。Next, refer to FIG. 3F , which is a schematic view showing forming a plurality of conductive elements on the front surface of the substrate. In FIG. 3F , the front surface of the
虽然本发明以前述的较佳实施例揭露如上,然而其并非用以限定本发明,任何熟悉本技术的技术人员,在不脱离本发明的精神和范围内,当可作出种种等同的改变或替换,因此本发明的专利保护范围须视本说明书所附的本申请权利要求范围所界定的为准。Although the present invention is disclosed above with the aforementioned preferred embodiments, it is not intended to limit the present invention. Any skilled person who is familiar with this technology can make various equivalent changes or substitutions without departing from the spirit and scope of the present invention. Therefore, the scope of patent protection of the present invention must be defined by the scope of the claims of the application attached to this specification.
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