CN101566786A - Method for repairing phase shift mask defect - Google Patents
Method for repairing phase shift mask defect Download PDFInfo
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- CN101566786A CN101566786A CNA2008100365861A CN200810036586A CN101566786A CN 101566786 A CN101566786 A CN 101566786A CN A2008100365861 A CNA2008100365861 A CN A2008100365861A CN 200810036586 A CN200810036586 A CN 200810036586A CN 101566786 A CN101566786 A CN 101566786A
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Abstract
The invention discloses a method for repairing phase shift mask defect, which is used in the condition that focused ion beam is utilized to etch a transparent substrate of the phase shift mask, from which a defect is detected. The method comprises steps as follows: setting the critical etching numbers of the focused ion beam; and etching the transparent substrate where the defect locates by the focused ion beam to the critical etching number. The invention uses focused ion beam to etch the substrate area to be repaired till that the phase delay caused by the thickness of the area is closed to or reaches the requirement absence of defects and the critical etching number is used to determine the etching depth, thereby breaking the bottle neck of the prior art and satisfying the specification requirement of the phase shift mask that can not be well repaired in the prior art.
Description
Technical field
The present invention relates to a kind of restorative procedure of mask defective, particularly relate to a kind of restorative procedure of phase-shift mask defective.
Background technology
In the whole flow process that semiconductor is made, the manufacturing of mask is the key component of Connection between Processes, also is the higher part of cost in the flow process.And mask tends to produce defective in making, and its defective will have influence on the quality of each respective chip.For this reason, the defects detection of mask and recovery technique have obtained bigger development.
In addition, along with the raising with complexity dwindled of semiconductor element size, phase-shift mask has improved resolution and the depth of focus preferably and has obtained development fast with it, and it adopts makes the principle of phase delay 180 degree of incident light.As shown in Figure 1, it is a kind of schematic cross-section of known embedded phase-shift mask.Its in transparency carrier 10 (as, quartz base plate) with between the light non-transmittable layers (as, chromium layer) 30 form phase shift layer 20, the thickness by suitable setting phase shift layer 20 or choose the material of appropriate index, and making the phase delay 180 of incident light spend, just formed photic zone A on the mask this moment
CWith light tight district A
DThe figure that is constituted.
Yet as noted earlier, mask tends to produce defective in making, for example material too much or disappearance and cause quartzy problems such as fluctuating.In order to repair this defective, prior art is often utilized focused ion beam system to get rid of too much material or is utilized deposit such as naphthalene gas to supply the disappearance zone, yet this kind method is in being applied to the mask of some specification requirement the time, as 0.3um figure mask, be difficult to the effect that reaches desirable, so how to break through the bottleneck of existing phase-shift mask restorative procedure, the phase-shift mask restorative procedure of the easy row of provider has become particularly important.
Summary of the invention
The object of the present invention is to provide a kind of restorative procedure of phase-shift mask defective,, reach repairing effect preferably to break through the bottleneck of existing phase-shift mask restorative procedure.
For this reason, the invention provides a kind of restorative procedure of phase-shift mask defective, it comprises: when detecting a defective on the transparent substrates of phase-shift mask, utilize the transparent substrates at this place, defective place of focused-ion-beam lithography, this step comprises: the critical etching number of times of setting focused ion beam; The transparent substrates that utilizes place, the above-mentioned defective of focused-ion-beam lithography place is until reaching above-mentioned critical etching number of times.
Further, the critical etching number of times of above-mentioned focused ion beam is to determine by the following method: (1) is in an etching time intervals, choose a plurality of etching number of times, drafting place, defective place photic zone in the raster image of the phase-shift mask of etching is located non-photic zone and the ratio of normal non-photic zone raster width and the relation curve of etching number of times with the ratio and the defective place of normal photic zone raster width; (2) according to the resulting relation curve of step (1), dwindle the etching time intervals; (3) in the etching time intervals of dwindling, choose a plurality of etching number of times, drafting place, defective place photic zone in the raster image of the phase-shift mask of etching is located non-photic zone and the ratio of normal non-photic zone raster width and the relation curve of etching number of times with the ratio and the defective place of normal photic zone raster width; (4) according to resulting relation curve in the step (3), choose in the curve the most approaching desirable ratio of repairing of the ratio of width, promptly 100%, the pairing etching number of times of point as the critical etching number of times of focused ion beam.
Further, the above-mentioned critical etching number of times of choosing in step (3) in the resulting relation curve ratio of pairing width between 90% to 110%.
Further, resulting photic zone and pairing two relation curves of non-photic zone intersect twice in the above-mentioned steps (1).
Further, the central point of above-mentioned etching time intervals of dwindling is a certain etching number of times of choosing, wherein this etching number of times of choosing be close in the primary joining of resulting two relation curves in the step (1) and in this two relation curve the ratio of pairing width near the desirable ratio of repairing, promptly 100%.
Further, the raster width specification of the raster image of above-mentioned phase-shift mask is 0.3 micron.
Further, above-mentioned critical etching number of times is 3100 times.
Further, above-mentioned etching time intervals is 500 to 5000 times.
Further, above-mentioned etching time intervals of dwindling is 2500 to 3500 times.
In sum, the principle that the present invention will bring the out of phase of optical wavelength to postpone according to quartz plate thickness difference, utilize substrate regions that focused-ion-beam lithography need repair until reach this regional phase delay that thickness brought near or requirement when reaching zero defect; It utilizes the critical etching number of times to decide the above-mentioned degree of depth that needs etching, and utilizes equipment such as sweep electron microscope to observe out the reparation result that the different etching number of times is brought, thereby chooses suitable critical etching number of times, reaches comparatively desirable repairing effect.
Description of drawings
Fig. 1 is a kind of schematic cross-section of known embedded phase-shift mask;
Fig. 2 is the schematic flow sheet of the method for repairing phase shift mask defect that one embodiment of the invention provided;
Fig. 3 is the schematic flow sheet of the critical etching number of times establishing method of focused ion beam in one embodiment of the invention;
Fig. 4 is for finishing the schematic cross-section of the embedded phase-shift mask of reparation in one embodiment of the invention;
Fig. 5 is for having the grating synoptic diagram of the phase-shift mask of defective in one embodiment of the invention;
Fig. 6 is big interval CCD curve and a DCD curve synoptic diagram in one embodiment of the invention;
Fig. 7 is for dwindling interval CCD curve and DCD curve synoptic diagram in one embodiment of the invention.
Embodiment
For purpose of the present invention, feature are become apparent, the specific embodiment of the present invention is further described below in conjunction with accompanying drawing.
Please refer to Fig. 2, it is the schematic flow sheet of the method for repairing phase shift mask defect that one embodiment of the invention provided.In focused ion beam is repaired, when detecting defective on the transparent substrates at phase-shift mask, be different from the deposit mode of prior art, this method is utilized the transparent substrates at place, focused-ion-beam lithography defective place, reaches the effect of repair-deficiency.Specifically comprise the steps:
S100: the critical etching number of times (CST, Critical Sweep Time) of setting focused ion beam;
S200: the transparent substrates that utilizes place, focused-ion-beam lithography defective place is until reaching the critical etching number of times.
And the critical etching number of times of focused ion beam need satisfy when finishing the etching of these number of times, the phase delay effect of the phase delay effect of the thickness of defective region during with zero defect near or identical.And determining of this critical etching number of times is to adopt test of many times observable, specifically please refer to Fig. 3, and details are as follows:
S101: in an etching time intervals, choose a plurality of etching number of times, drafting place, defective place photic zone in the raster image of the phase-shift mask of etching is located non-photic zone and the ratio of normal non-photic zone raster width and the relation curve of etching number of times with the ratio and the defective place of normal photic zone raster width;
S102:, dwindle the etching time intervals according to the resulting relation curve of step S101;
S103: in the etching time intervals of dwindling, choose a plurality of etching number of times, drafting place, defective place photic zone in the raster image of the phase-shift mask of etching is located non-photic zone and the ratio of normal non-photic zone raster width and the relation curve of etching number of times with the ratio and the defective place of normal photic zone raster width;
S104: according to resulting relation curve among the step S103, choose in the curve the most approaching desirable ratio of repairing of the ratio of width, promptly 100%, the pairing etching number of times of point as the critical etching number of times of focused ion beam.
Under ideal reparation state, the ratio that non-photic zone and normal non-photic zone raster width are located in the ratio of defective place place photic zone and normal photic zone raster width and defective place in the raster image of phase-shift mask should be 100%, the promptly desirable ratio of repairing.Yet in practice, desirable reparation state is to be difficult to realize, between 90% to 110%, just satisfy and repair requirement so often set to repair ratio, the critical etching number of times of promptly choosing in step S103 in the resulting relation curve ratio of pairing width between 90% to 110%.
For making above process understandable more in detail, be that example describes above-mentioned steps in detail with the embedded phase-shift mask shown in Fig. 1:
Please refer to Fig. 4, it is for finishing the schematic cross-section of the embedded phase-shift mask of reparation in one embodiment of the invention.As shown in the figure, originally has defective 40 on it, it can be caused by the too much or disappearance of material, adopt above method, this defective 40 is repaired, the transparent substrates that promptly utilizes place, the above-mentioned defective of focused-ion-beam lithography place promptly arrive required depth H, and the caused phase change of this depth H can satisfy the reparation requirement until reaching the critical etching number of times.
Phase-shift mask with the 0.3um specification that can't break through in the prior art is the establishing method that example describes the critical etching number of times of above focused ion beam in detail below:
Utilize the defective phase-shift masks of equipment observation band such as sweep electron microscope, can obtain its raster image.As shown in Figure 5, be convenient narration, this sentences photic zone grating C and situation alternately appearance identical with non-photic zone grating D width is that example is illustrated.The normal width W of photic zone grating C and non-photic zone grating D is 0.3um.Dashed region is that the caused grating of defective changes among the figure, and as seen the photic zone grating C on the non-photic zone grating D both sides in this zone causes raster image not meet the demands owing to defective connects together.For this reason, need carry out plasma etching to the transparent substrates of phase-shift mask, and repair the defective on it.
At first configure etching size, selected then etching time intervals is 500 to 5000, locates non-photic zone and the ratio of normal non-photic zone raster width and the relation curve of etching number of times (DCD curve) drawing in the raster image of the phase-shift mask of etching place, defective place photic zone and the ratio of normal photic zone raster width and the relation curve of etching number of times (CCD curve) and defective place on this interval.As shown in Figure 6, its horizontal ordinate is the etching number of times, and ordinate is the ratio of width; When the etching number of times more than or equal to 2500 the time, CCD curve and DCD curve have two intersection points; In addition, when the etching number of times rises, the reliability of focused ion beam scanning is with variation, and cause transparency carrier etched area border out of plumb, and reduced its phase shift ability, so choose near CCD curve and the primary joining of DCD curve and the ratio of width near the desirable ratio of repairing, promptly 100% a bit pairing number of times is as the central point of the etching time intervals of dwindling.As figure, this central point is 3000 times.
Etching size is constant, and selected etching time intervals of dwindling is 2500 to 3500, the CCD curve on this interval and DCD curve as shown in Figure 7, when the etching number of times is 3100, the most approaching desirable reparation ratio of the ratio of width, promptly 100%; And, can find that the etched area border is better by scanning electron-microscopic observation.
So by above method, choose critical etching number of times 3100 times as focused ion beam, and with the transparent substrates at place, this etching defective place until reaching this critical etching number of times, and realized reparation to phase-shift mask, overcome the reparation problem of the phase-shift mask of the unappeasable 0.3um specification of prior art.Certainly, those skilled in the art also can point out in view of the above, are applied in the reparation of phase-shift mask of other specifications.
Claims (9)
1. the restorative procedure of a phase-shift mask defective is characterized in that, comprising:
When detecting a defective on the transparent substrates of phase-shift mask, utilize the transparent substrates at this place, defective place of focused-ion-beam lithography, it comprises:
Set the critical etching number of times of focused ion beam;
The transparent substrates that utilizes place, the above-mentioned defective of focused-ion-beam lithography place is until reaching above-mentioned critical etching number of times.
2. the restorative procedure of phase-shift mask defective according to claim 1 is characterized in that, wherein the critical etching number of times of above-mentioned focused ion beam is to determine by the following method:
(1) in an etching time intervals, choose a plurality of etching number of times, drafting place, defective place photic zone in the raster image of the phase-shift mask of etching is located non-photic zone and the ratio of normal non-photic zone raster width and the relation curve of etching number of times with the ratio and the defective place of normal photic zone raster width;
(2) according to the resulting relation curve of step (1), dwindle the etching time intervals;
(3) in the etching time intervals of dwindling, choose a plurality of etching number of times, drafting place, defective place photic zone in the raster image of the phase-shift mask of etching is located non-photic zone and the ratio of normal non-photic zone raster width and the relation curve of etching number of times with the ratio and the defective place of normal photic zone raster width;
(4) according to resulting relation curve in the step (3), choose in the curve the most approaching desirable ratio of repairing of the ratio of width, promptly 100%, the pairing etching number of times of point as the critical etching number of times of focused ion beam.
3. the restorative procedure of phase-shift mask defective according to claim 2 is characterized in that, the wherein above-mentioned critical etching number of times of choosing in step (3) in the resulting relation curve ratio of pairing width between 90% to 110%.
4. the restorative procedure of phase-shift mask defective according to claim 2 is characterized in that, wherein resulting photic zone and pairing two relation curves of non-photic zone intersect twice in the above-mentioned steps (1).
5. the restorative procedure of phase-shift mask defective according to claim 4 is characterized in that, the central point of wherein above-mentioned etching time intervals of dwindling is a certain etching number of times of choosing,
Wherein this etching number of times of choosing be close in the primary joining of resulting two relation curves in the step (1) and in this two relation curve the ratio of pairing width near the desirable ratio of repairing, promptly 100%.
6. the restorative procedure of phase-shift mask defective according to claim 2 is characterized in that, wherein the raster width specification of the raster image of above-mentioned phase-shift mask is 0.3 micron.
7. the restorative procedure of phase-shift mask defective according to claim 6 is characterized in that, wherein above-mentioned critical etching number of times is 3100 times.
8. the restorative procedure of phase-shift mask defective according to claim 7 is characterized in that, wherein above-mentioned etching time intervals is 500 to 5000 times.
9. the restorative procedure of phase-shift mask defective according to claim 8 is characterized in that, wherein above-mentioned etching time intervals of dwindling is 2500 to 3500 times.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100365861A CN101566786B (en) | 2008-04-24 | 2008-04-24 | Method for repairing phase shift mask defect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100365861A CN101566786B (en) | 2008-04-24 | 2008-04-24 | Method for repairing phase shift mask defect |
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| Publication Number | Publication Date |
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| CN101566786A true CN101566786A (en) | 2009-10-28 |
| CN101566786B CN101566786B (en) | 2011-09-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2008100365861A Expired - Fee Related CN101566786B (en) | 2008-04-24 | 2008-04-24 | Method for repairing phase shift mask defect |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102053480A (en) * | 2009-11-10 | 2011-05-11 | 中芯国际集成电路制造(上海)有限公司 | Method for repairing defect of mask |
| CN107703715A (en) * | 2016-08-08 | 2018-02-16 | 中芯国际集成电路制造(上海)有限公司 | A kind of restorative procedure of mask pattern defect |
| CN114758942A (en) * | 2022-03-24 | 2022-07-15 | 中国科学院光电技术研究所 | Reactive ion etching mask |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20070109115A (en) * | 2006-05-09 | 2007-11-15 | 주식회사 하이닉스반도체 | Method of exposing the wafer having high pattern density region and low pattern density region |
-
2008
- 2008-04-24 CN CN2008100365861A patent/CN101566786B/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102053480A (en) * | 2009-11-10 | 2011-05-11 | 中芯国际集成电路制造(上海)有限公司 | Method for repairing defect of mask |
| CN102053480B (en) * | 2009-11-10 | 2012-08-29 | 中芯国际集成电路制造(上海)有限公司 | Method for repairing defect of mask |
| CN107703715A (en) * | 2016-08-08 | 2018-02-16 | 中芯国际集成电路制造(上海)有限公司 | A kind of restorative procedure of mask pattern defect |
| CN107703715B (en) * | 2016-08-08 | 2020-09-25 | 中芯国际集成电路制造(上海)有限公司 | Method for repairing mask pattern defects |
| CN114758942A (en) * | 2022-03-24 | 2022-07-15 | 中国科学院光电技术研究所 | Reactive ion etching mask |
| CN114758942B (en) * | 2022-03-24 | 2023-05-30 | 中国科学院光电技术研究所 | Reactive ion etching mask |
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| CN101566786B (en) | 2011-09-07 |
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