CN101566506B - Structure of film thermoelectric converter based on micro bridge resonator and fabricating method thereof - Google Patents
Structure of film thermoelectric converter based on micro bridge resonator and fabricating method thereof Download PDFInfo
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- CN101566506B CN101566506B CN200810060614.3A CN200810060614A CN101566506B CN 101566506 B CN101566506 B CN 101566506B CN 200810060614 A CN200810060614 A CN 200810060614A CN 101566506 B CN101566506 B CN 101566506B
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Abstract
The invention discloses a structure of a film thermoelectric converter based on a micro bridge resonator and a fabricating method thereof. The film thermoelectric converter mainly comprises a heating resistor (1), the micro bridge resonator (2) and a sealing ring (3). Heat of the heating resistor 1 after the temperature rises leads the temperature of the micro bridge resonator (2) to rise through ways of convection, radiation, or heat exchange and the like. Because the heat expansion coefficients of materials made into the micro bridge resonator (2) are different, the axial crushing stress of the heated micro bridge resonator increases or pulling stress reduces, the resonance frequency is lowered, and the temperature information of the heating resistor (1) can be reflected through measuring the change of the resonance frequency. The film thermoelectric converter based on the micro bridge resonator (2) has high sensitivity of measuring the heating resistor (1) by using the micro bridge resonator (2), little heat of conducting to an underlayer through the micro bridge resonator (2), and small error of converting alternative current into direct current; meanwhile, the heating resistor (1) can be flexibly designed.
Description
Technical field
The present invention relates to structure and the manufacture method of thermoelectric converter, particularly a kind of structure and method for making of the film thermoelectric converter based on micro bridge resonator belong to microelectromechanical systems (MEMS) field.
Background technology
The AC-DC conversion standard is one of basic electricity standard, the alternating voltage (or electric current) of 10Hz～1MHz can be derived from corresponding DC quantity by this standard, and (uncertainty is better than 10 to be traceable to Josephson's direct current quantum voltage reference
-8).The most accurate AC-DC conversion modular system is realized by thermoelectric converter in the world at present.Thermoelectric converter is made up of heating resistor and temperature sensor.Alternating voltage (or electric current) and DC voltage (or electric current) are applied on the heating resistor successively in turn, the temperature of temperature sensor measurement heating resistor, and relatively the Joule heat of their generations just can measure the size that alternating voltage (or electric current) produces electric power.For desirable thermoelectric converter, the AC and DC voltage of constant power is applied to identical heating resistor two ends, and the output voltage of temperature sensor also should equate.Thermoelectric converter as the AC-DC conversion standard has following three kinds of main types: unit thermoelectric converter, three-dimensional polynary thermoelectric converter and film (or plane) type thermoelectric converter.
The unit thermoelectric converter was succeeded in developing the fifties in last century, was made up of a thin reheater and a pair of thermocouple in the vacuum glass bubble.Thermocouple by insulation glass or ceramic bead and the thermo-contact of well heater mid point with the temperature of HEATER FOR MEASURING.SJTC is simple in structure, Hz-KHz is wide (maximum operation frequency can reach GHz), and long term drift can be ignored, and is widely used in AC-DC conversion standard and AC power standard.In parallel by with shunt, current measuring range can expand between 1mA～20A; By with the polyphone of inductive voltage divider or Range Extension resistance, the voltage measurement scope can expand between 0.001～1000V.The AC-DC conversion uncertainty of standard of setting up with it is 10
-6Magnitude.The shortcoming of SJTC is heat outputting electric potential signal fainter (only in the millivolt magnitude), for reaching 10
-6Magnitude conversion accuracy, thermoelectrical potential measuring accuracy need reach receives the volt magnitude.
The three-dimensional polynary thermoelectric converter that 70～eighties of last century occurs is to be succeeded in developing by the German federal standard laboratory the earliest.Making the polynary thermoelectric converter of this solid need be that the thermocouple wire of 10 μ m is together in series by modes such as spot welding or argon arc weldings and forms the spiral line type thermoelectric pile with diameter at microscopically, two-wire well heater of thermoelectric pile upper support utilizes thermoelectric pile HEATER FOR MEASURING temperature.The shortcoming of three-dimensional polynary thermoelectric converter be the frequency of utilization narrow range, easily by electrostatic breakdown, manual operations be not suitable for producing in batches, expensive, maximum output voltage generally has only tens millivolts.
Along with development of modern science and technology, the continuous maturation of micromachining technology and thin film technique particularly, significant variation has taken place in the structure of thermoelectric converter and manufacture craft.German federal standard laboratory in 1989 has been developed in the world first stylobate in the multi-element film thermoelectric converter of thermoelectric pile temperature-measurement principle.The hot junction of heater strip and thermocouple is positioned at the Si that back side anisotropic etch is made
3N
4/ SiO
2/ Si
3N
4Adiabatic film upper surface, the cold junction of thermocouple is on silicon substrate.Adopt more than 100 CuNi
44The Bi-Sb thermocouple measurement heating resistor temperature that-Cu or Sai Beier coefficient are bigger, two thermocouple wires also can overlap up and down by insulating interlayer usually on same plane.Early stage heater strip material is CuNi
44, used the NiCr or the Ni that hang down Thomson coefficient afterwards instead
45Cr
50Si
5Deng material, adopt suitable annealing process that temperature-coefficient of electrical resistance is reached below several ppm/ ℃.The AC-DC conversion error of prepared thin film thermoelectric converter (is 0.1 * 10 in the 100Hz～100kHz) at intermediate frequency range
-6, be 8 * 10 during 100kHz
-6, be 40 * 10 during 1MHz
-6, year stability is better than 0.1%.The aerial responsiveness of thermoelectric converter (output voltage and AC signal power ratio) that adopts 134 pairs of Bi-Sb thermopairs to form is 16V/W, and the responsiveness in the vacuum is 120V/W.Under low frequency, in order to increase the time constant of thermoelectric converter, need below heating resistor, make a caloic gauge block, improve thermal time constant, on the bonding pad compensating circuit can make the AC-DC conversion error when 10Hz less than 3 * 10
-6In order to reduce thermoelectric converter in the AC-DC conversion error of high-frequency range, change traditional silicon substrate into the quartz crystal substrate, because the relative dielectric constant of quartz crystal is much smaller than silicon substrate, therefore reduced the electric capacity of heating resistor pad, improved the performance of thin film thermoelectric converter under high frequency, the AC-DC conversion error is reduced to 3 * 10 in 100～500kHz scope
-6, in 700KHz～1MHz. scope, be 5 * 10
-6
Outdoor except the German federal standard test, Unite States Standard (USS) Institute for Research and Technology, Korea S Inje university, the state-run advanced Industrial Science and Technology Institute of Japan all adopt this temp measuring method to realize the thin film thermoelectric converter, and the device of performance and PTB development is close.Compare with the polynary thermoelectric converter of solid, this multi-element film thermoelectric converter of realizing based on the thermoelectric pile thermometry has the following advantages: the Si that (1) utilizes back side anisotropic etch to make
3N
4/ SiO
2/ Si
3N
4Adiabatic membrane good heat-insulation effect, maximum output voltage are generally greater than 100mV.(2) adopt dual surface lithography, evaporation technology generations such as (or sputters) substitute worker in thin-film technique and the micromachining technology to operate to make thermoelectric pile and have desirable periodic structure, make thermal resistance and the temperature of each section of heating resistor basic identical, reduced the AC-DC conversion error that Thomson effect is introduced.(3) pad of making between well heater and the outer lead at the silicon dioxide insulating layer of surface of silicon can make the heat that produces because of peltier effect be conducted effectively by silicon substrate, and the error that conversion produces to thermoelectricity can be ignored substantially.(4) utilize micromachining technology can realize batch making, cost descends significantly.Therefore the polynary thermoelectric converter of film is the focus of present thermoelectric converter research.
Yet, thisly have following shortcoming with thermoelectric pile as the thermoelectric converter of temperature-sensing element (device); (1) considers from the sensitivity angle that improves thermopile temperature sensor, thermocouple material need possess characteristics such as high Seebeck coefficient, low-resistivity, lower thermal conductivity, but according to the Wedman-Franze law, the long-pending of the thermal conductivity of material and resistivity is constant, be difficult to reduce simultaneously thermal conductivity and resistivity, present widely used CuNi
44The thermal conductivity of-Cu, CuNi-NiCr, Bi-Sb thermopair is bigger, and thermal insulation is also undesirable, and the heat that is transmitted to substrate through thermocouple wire is one of main source that produces the AC-DC conversion error.(2) remolding sensitivity of electric thermo-couple temperature sensitive element is lower.In order to improve temperature survey sensitivity (or responsiveness of thermoelectric converter), thermopair is formed the thermoelectric pile sensitive element surplus adopting 100 usually, device size is very big, needs to make large tracts of land Si
3N
4/ SiO
2/ Si
3N
4Thermal insulation film, film are easily sent out wrinkle or fracture, are difficult for realizing stress equilibrium.(3) the higher thermoelectric pile material of responsiveness is (as Bi, Sb, Bi
2Te
3, Bi
0.5Sb
1.5Te
3, Sb
2Te
3) deposition, burn into peel off etc. that the ic process compatibility of technology and standard is poor, yield rate is low.(4) the thermoelectric pile size of a large amount of thermopairs compositions is bigger, limited the degree of freedom of heating resistor design, usually can only adopt the two-wire heating resistor, thereby the heating resistor temperature lowlyer makes the responsiveness of thermoelectric converter very little when measuring ac small signal, transformed error is bigger.
In order to overcome the shortcoming of thermoelectric pile commercial measurement heating resistor temperature, the people such as F.L.Katzmann of German federal standard laboratory are with optics bolometer (or the bolometer of commercialization, thermopile IR detector) combines with heating resistor, the heat of heating resistor radiation is received the direct transmission in back or is sent to photon detector (or thermistor through optical fiber by the condenser lens of infrared eye, thermoelectric pile) is converted to voltage signal, this method can reduce time and the thermal time constant that heat conducts from heating element to temperature sensor, sensing element can not absorb heat from well heater, also can avoid because of thermoelectric effect the AC-DC conversion error that stray capacitance and dielectric loss cause.Shortcoming is not realize the system integration, Optimal Structure Designing and takes necessary electromagnetic shielding measure; Limited by commercial infrared detector encapsulating structure, infrared eye and heating resistor distance can't approach; Performance with also have big gap based on the film thermoelectric converter of thermoelectric pile thermometric mode; Adopt photon detector to need refrigeration plant, cost is higher, and the responsiveness of thermopile IR detector and detectivity are lower.
In sum, the heating resistor method of temperature of MEASUREMENTS OF THIN thermoelectric converter mainly contains two kinds at present: the one, by thermoelectric pile or thermistor contact type measurement, the 2nd, by thermopile IR detector or photon detector non-contact measurement, but all there are some problems.Therefore press for the film thermoelectric converter of novel responsive to temperature principle.
Summary of the invention
The objective of the invention is to invent a kind of film thermoelectric converter based on micro bridge resonator, with the temperature of high sensitivity metering heating resistor, reduce the heating resistor heat through temperature sensor to the conduction of substrate, satisfy the demand that high frequency and faint alternating voltage (stream) measure, the AC-DC conversion error that reduces thermoelectric converter.
For achieving the above object, the technical solution adopted in the present invention is: film thermoelectric converter mainly is made up of heating resistor, micro bridge resonator and sealing ring.Be arranged in adiabatic film upper surface or the interlayer of stress equilibrium by the heating resistor of low Thomson coefficient material making.Micro bridge resonator is made up of micromechanics bridge, vibrator and vibro-pickup, as temperature sensing element, detects the temperature of heating resistor.
The micro bridge resonator of film thermoelectric converter based on micro bridge resonator involved in the present invention can adopt following exciting mode: static excitation, photothermal excitation, electric heating excitation, piezoelectric excitation, electric magnetization etc.Its resonance frequency can detect in the following ways: capacitor vibration pick-up, the interference of light or the pick-up of optical lever method, voltage dependent resistor (VDR) pick-up, piezoelectricity pick-up, tunnel current pick-up etc.Above-mentioned vibrator adopts different forms when adopting different incentive program.To static excitation, vibrator is the electrostatic attraction electrode that is produced on adiabatic film surface and micromechanics bridge surface.To photothermal excitation, need not make vibrator at the making device, but require the plane of incidence of bridge that incident light is had high reflectivity, its vibrator is external light source.To the electric heating excitation, vibrator is the excitation resistance that is produced on the micromechanics bridge.To piezoelectric excitation, vibrator is the piezo actuator that is produced on the micromechanics bridge.To electric magnetization, vibrator is the coil that is produced on the micromechanics bridge.Equally, adopt the different different forms of above-mentioned vibro-pickup employing in (pick-up) scheme that detect.To capacitor vibration pick-up, vibro-pickup should be the detecting electrode that is produced on adiabatic film upper surface and micromechanics bridge lower surface.To the light signal pick-up, vibro-pickup is outside optical detection device.To the voltage dependent resistor (VDR) pick-up, the voltage dependent resistor (VDR) of vibro-pickup for making by diffusion or ion implantation technology.To the piezoelectricity pick-up, vibro-pickup is piezoelectric vibration pickup.
The principle of work of film thermoelectric converter based on micro bridge resonator involved in the present invention: heating resistor temperature its heat of back that raises causes the rising of micro bridge resonator temperature through approach such as convection current, radiation or heat conduction.Owing to form the material coefficient of thermal expansion coefficient difference of micro bridge resonator, axial compression stress increases (or tension decline), and resonance frequency descends, by measuring the temperature information that change of resonance frequency can reflect heating resistor.Micro bridge resonator can the contact type measurement heating resistor the temperature field, also can be used as the temperature field of infrared eye non-contact measurement heating resistor.The heat of heating resistor radiation is sent to micro bridge resonator through optical fiber after being received by condenser lens when using as infrared eye.
Film thermoelectric converter based on micro bridge resonator involved in the present invention can adopt following method to make:
(1) make heating resistor:
A) adopt low-pressure chemical vapor phase deposition, plasma chemical vapor deposition, thermal oxidation process to make adiabatic film at silicon chip surface;
B) evaporation or sputtered metal film, photoetching or lift-off technology are made the heating resistor figure;
C) back side photoetching forms back of the body corrosion window, and the anisotropic etch silicon substrate goes out adiabatic film up to back exposure.
(2) make micro bridge resonator:
A) original material is common silicon chip or soi wafer, and its front utilizes various thin-film techniques to make bilayer or multilayer film, in the shape of the positive photoetching micromechanics of silicon chip bridge, corrodes the compound film system of above-mentioned bilayer or multilayer film;
B) make vibrator and vibro-pickup at the micromechanics bridge, form micro bridge resonator, make the metal internal lead;
C) front or back side photoetching corrosion window, anisotropic dry or wet etching discharge micro bridge resonator;
(3) heating resistor and micro bridge resonator are combined;
If a) temperature of micro bridge resonator contact type measurement heating resistor, the silicon chip that then will be manufactured with heating resistor is packaged together by anode linkage, glass solder Sealing Technology with the silicon chip that is manufactured with micro bridge resonator; Scribing, welding outer lead;
B) if micro bridge resonator as the temperature field of infrared eye non-contact measurement heating resistor, then the infrared ray with the heating resistor radiation is coupled into Infrared Transmission optical fiber through infrared condenser lens, is transmitted to the micro bridge resonator temperature-sensing element (device) of individual packages again.
Film thermoelectric converter based on micro bridge resonator involved in the present invention has the following advantages: utilize micro bridge resonator measure heating resistor highly sensitive, through temperature sensor be transmitted to that the heat of substrate is minimum, heating resistor can flexible design, the AC-DC conversion error is little.
Description of drawings
Fig. 1 is the structural representation of film thermoelectric converter based on micro bridge resonator involved in the present invention;
Fig. 1 (a) is the film thermoelectric converter that static excitation/capacitance method detects the micro bridge resonator frequency;
Fig. 1 (b) is the film thermoelectric converter that photothermal excitation/optical lever method or optical interferometry detect the micro bridge resonator frequency;
Fig. 1 (c) is the film thermoelectric converter that electric heating excitation/pressure drag detects the micro bridge resonator frequency;
Fig. 1 (d) is the film thermoelectric converter of piezoelectric excitation/piezoelectric detection micro bridge resonator frequency; But excitation and detection mode are not limited to combinations thereof, independent assortment as required; For example also can adopt static excitation/pressure drag detection method to realize micro bridge resonator;
Fig. 2 is the manufacture craft process flow diagram that detects the film thermoelectric converter of micro bridge resonator deformation as the voltage dependent resistor (VDR) method of the embodiment of the invention.
Among the figure: the 1-heating resistor; The 3-sealing ring; The adiabatic film of 4-; 5-micromechanics bridge; The 8-electrostatic attraction electrode; The 9-light source; 10-encourages resistance; The 11-piezo actuator; The 13-detecting electrode; The 14-optical detection device; The 15-voltage dependent resistor (VDR); The 16-piezoelectric vibration pickup;
Embodiment
The present invention will be further described below in conjunction with drawings and Examples, but be not limited to this embodiment.
Embodiment:
Utilize technical scheme of the present invention to make a kind of film thermoelectric converter of the micro bridge resonator based on static excitation/capacitor vibration pick-up.Its manufacture craft flow process is as follows:
1) original silicon chip adopts N-type, (100) face silicon chip, resistivity 1～10 Ω .cm.(see accompanying drawing 2[1])
2) low-pressure chemical vapor phase deposition (LPCVD) silicon nitride film, thickness 200nm; The low-pressure chemical vapor phase deposition polysilicon membrane, thickness 200nm, thermal oxide makes it all change silica membrane into; The low-pressure chemical vapor phase deposition silicon nitride film, thickness 200nm.Evaporation technology is made the aluminium film, photoetching process combine with etching process the aluminium bottom electrode of formation electrostatic attraction electrode 8 and detecting electrode 13 and aluminum lead figure (see accompanying drawing 2[2])
3) photoetching process obtains heating resistor 1 figure, the sputter chrome-nickel alloy thin film, and stripping technology is made heating resistor 1 figure.Plasma chemical vapor deposition technology (PECVD) deposition silicon nitride film, thickness 400nm, the masking layer in front when corroding as the back side.(see accompanying drawing 2[3])
4) adiabatic film 4 is corroded in back side photoetching, forms back of the body corrosion window, and the anisotropic etch silicon substrate goes out adiabatic film 4 up to back exposure.The silicon nitride film of the PECVD method deposit in dry etch process etching front.(see accompanying drawing 2[4])
5) get other a slice N-type, (100) face silicon chip, resistivity 1～10 Ω .cm.The thermal oxidation method silicon dioxide thin film growth.(see accompanying drawing 2[5])
6) positive sputter gold thin film, plasma plasma-reinforced chemical vapor deposition (PECVD) silicon nitride film.The figure of positive photoetching micromechanics bridge 5, the dry etching silicon nitride film, the acid gilding film forms micromechanics bridge 5.(see accompanying drawing 2[6])
7) positive sputtered aluminum film, the top electrode of photoetching electrostatic attraction electrode 8 and detecting electrode 13 and lead-in wire figure.Plasma plasma-reinforced chemical vapor deposition (PECVD) silicon nitride film.(see accompanying drawing 2[7])
8) back side photoetching, the corrosion silicon substrate goes out silica membrane up to back exposure.Back side dry etching silica membrane, positive dry etching silicon nitride film.(see accompanying drawing 2[8])
9) with 2)～4) silicon chip that contains heating resistor 1 and 5 finished of step process)～8) silicon chip that contains micro bridge resonator finished of step is packaged together by the glass solder Sealing Technology.Scribing, welding outer lead.(see accompanying drawing 2[9])
Claims (4)
1. film thermoelectric converter based on micro bridge resonator, it is characterized in that: film thermoelectric converter mainly is made up of heating resistor (1), micro bridge resonator and sealing ring (3), and described micro bridge resonator is made up of micromechanics bridge (5), vibrator and vibro-pickup; This film thermoelectric converter adopts following processing step to make and obtains:
(1) make heating resistor (1):
A) adopt low-pressure chemical vapor phase deposition, plasma chemical vapor deposition, thermal oxidation process to make adiabatic film (4) at silicon chip surface;
B) evaporation or sputtered metal film, photoetching or lift-off technology are made heating resistor (1) figure;
C) back side photoetching forms back of the body corrosion window, and the anisotropic etch silicon substrate goes out adiabatic film (4) up to back exposure;
(2) make micro bridge resonator:
A) original material is common silicon chip or soi wafer, and its front utilizes various thin-film techniques to make bilayer or multilayer film, in the shape of the positive photoetching micromechanics bridge of silicon chip (5), corrodes the compound film system of above-mentioned bilayer or multilayer film;
B) make vibrator and vibro-pickup at micromechanics bridge (5), form micro bridge resonator, make the metal internal lead;
C) front or back side photoetching corrosion window, anisotropic dry or wet etching discharge micro bridge resonator;
(3) heating resistor (1) and micro bridge resonator are combined:
If a) temperature of micro bridge resonator contact type measurement heating resistor (1), the silicon chip that then will be manufactured with heating resistor (1) is packaged together by anode linkage, glass solder Sealing Technology with the silicon chip that is manufactured with micro bridge resonator; Scribing, welding outer lead;
B) if micro bridge resonator as the temperature field of infrared eye non-contact measurement heating resistor (1), then the infrared ray with heating resistor (1) radiation is coupled into Infrared Transmission optical fiber through infrared condenser lens, is transmitted to the micro bridge resonator temperature-sensing element (device) of individual packages again.
2. a kind of film thermoelectric converter based on micro bridge resonator according to claim 1, it is characterized in that: the temperature of heating resistor (1) is measured by micro bridge resonator, its heat caused that through convection current, radiation or heat conduction path the micro bridge resonator temperature raises after heating resistor (1) temperature raise, owing to form the material coefficient of thermal expansion coefficient difference of micro bridge resonator, axial compression stress increases or tension descends, resonance frequency descends, by measuring the temperature information that change of resonance frequency can reflect heating resistor (1).
3. a kind of film thermoelectric converter based on micro bridge resonator according to claim 1, it is characterized in that: micro bridge resonator is by the temperature field of contact type measurement heating resistor (1), or as the temperature field of infrared eye non-contact measurement heating resistor (1), when using as infrared eye, the heat of heating resistor (1) radiation is sent to micro bridge resonator through optical fiber after being received by condenser lens.
4. a kind of film thermoelectric converter based on micro bridge resonator according to claim 1 is characterized in that: the following exciting mode of micro bridge resonator employing: static excitation, photothermal excitation, electric heating excitation, piezoelectric excitation, electric magnetization; The micro bridge resonator resonance frequency detects in the following ways: capacitor vibration pick-up, the interference of light or the pick-up of optical lever method, voltage dependent resistor (VDR) pick-up, piezoelectricity pick-up, tunnel current pick-up.
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| CN102079503B (en) * | 2009-11-26 | 2012-08-29 | 中芯国际集成电路制造(上海)有限公司 | Etching method of silicon substrate forming MEMS (Micro Electro Mechanical System) device |
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| CN106449960B (en) * | 2016-07-01 | 2018-12-25 | 中国计量大学 | A kind of structure and production method based on static excitation/capacitance detecting micro-bridge resonator film thermoelectric converter |
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| CN109987570B (en) * | 2019-03-29 | 2022-11-25 | 中国计量大学 | Thermoelectric converter structure based on electromagnetic excitation monocrystalline silicon resonant beam and manufacturing method |
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| CN112710402B (en) * | 2020-12-22 | 2022-11-22 | 武汉敏声新技术有限公司 | Resonant thermal infrared sensor and preparation method thereof |
| CN114242881B (en) * | 2021-12-16 | 2023-04-07 | 中国工程物理研究院电子工程研究所 | Cascade type plane thermoelectric thin film structure for cooling chip hot spots |
| CN114890373B (en) * | 2022-05-11 | 2024-10-01 | 山东大学 | Self-supporting MEMS infrared light source and preparation method thereof |
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