CN101552014B

CN101552014B - Data read/ write device

Info

Publication number: CN101552014B
Application number: CN2009101388329A
Authority: CN
Inventors: 久保光一; 平井隆大; 青木伸也; 罗宾·卡特; 鎌田亲义
Original assignee: Toshiba Corp
Current assignee: Kioxia Corp
Priority date: 2005-12-13
Filing date: 2006-12-13
Publication date: 2012-11-14
Anticipated expiration: 2026-12-13
Also published as: CN1983619A; CN1983619B; CN101552014A

Abstract

A data read/write device according to an example of the present invention includes a recording layer, and means for applying a voltage to the recording layer, generating a resistance change in the recording layer, and recording data. The recording layer is composed of a composite compound having at least two types of cation elements, at least one type of the cation element is a transition element having a d orbit in which electrons have been incompletely filled, and the shortest distance between the adjacent cation elements is 0.32 nm or less.

Description

The data read/write device

The application is to be dividing an application of Dec 13, application number in 2006 are 200610168972.7, name is called the data read/write device application for a patent for invention the applying date.

Cross reference is to related application

The application is based on the No.2005-359301 of Japanese patent application formerly and the No.2006-236743 that also require respectively on Dec 13rd, 2005 and application on August 31st, 2006, and both contents are quoted in this merging.

Technical field

The present invention relates to a kind of data read/write device that possesses high record density.

Background technology

In recent years, Miniature Portable Unit is in fashion in the whole world.Simultaneously, along with developing rapidly of high speed data transmission networks, the demand of small-sized high capacity nonvolatile memory is also increased rapidly.Among them, NAND type (NAND type) flash memory (flash memory) and miniature hard-drive (HDD) have fast development on recording density, and have formed great market.

Yet, above-mentioned both is pointed out the limit of overwriting density.That is to say, can appear in the NAND type flash memory because of minimum feature and significantly reduce the problem that causes processing cost to increase and in little HDD, be difficult to accurate tracking.

The idea of new memory of being devoted to significantly to surmount density limit that some tackle this situation was once proposed.

For example, adopt a kind of can be with binary states, i.e. amorphous state (ON) and crystalline state (OFF), the phase transition storage of the recording materials of existence (PRAM).The principle of record data is that binary states is associated with binary data " 0 " and " 1 " respectively.

For example, with regard to writing/wipe operation,,, recording materials produce crystalline state and being applied little pulse of electrical power through recording materials being applied big pulse of electrical power to produce amorphous state.

Read operation is to realize through apply a small amount of read current, the resistance of measuring these recording materials then that are unlikely to write/wipe to recording materials.Greater than its resistance value in crystalline state, both differ 10 to these recording materials in amorphous resistance value ³The order of magnitude.

Even the maximum characteristics of PRAM are that component size is reduced to the 10nm order of magnitude and also can operates.Therefore in this case, can realize about 1.5Tbpsi recording density of (terabyte (terra bite) per square inch), become the candidate of realizing high density recording (referring to for example, JP-A 2005-252068 (KOKAI)).

Though be different from PRAM, once reported very similarly new memory (referring to for example, JP-A 2004-234707 (KOKAI)) of a kind of principle of work and PRAM.

According to this report, a representative instance that is used for the recording materials of record data is a nickel oxide.The same with PRAM, big pulse of electrical power and little pulse of electrical power be used to write/wipe operation.In this case, once report it and write/wiped the advantage that the power consumption when operating decreases than PRAM.

Although up to the present, the principle of work of this new memory is still not clear, and its reappearance has obtained checking, therefore becomes another candidate of realizing high density recording.In addition, to its principle of work, some mechanisms once attempted to clarify.

Except that these storeies, also proposed use MEMS (micro-electromechanical system) the MEMS storer (referring to for example, P.Vettiger, G.Cross; M.Despont, U.Drechsler, U.Durig, B.Gotsmann; W.Haberle, M.A.Lants, H.E.Rothuizen; R.Stutz and G.K.Binning, IEEE Trans.Nanotechnology 1,39 (2002)).

Especially, in the structure of a MEMS storer that is called Millipede, the cantilever of several array shapes and the recording medium with organic substance are against each other.The probe of the end of this cantilever contacts with recording medium with suitable pressure.

The temperature that is added on the well heater on the probe through control selectively carries out write operation.That is to say that if heter temperature raises, recording medium is softening, probe is absorbed in recording medium, then, in recording medium, forms cavity.

The mode that read operation is carried out is, when applying one to probe when being unlikely to make the softening electric current of recording medium, probe scanned on the recording medium surface.If probe falls into the cavity of recording medium, probe temperature descends, and then, the resistance value of well heater increases.Therefore, can come perception data through the variation of reading this resistance value.

The MEMS storer for example maximum characteristics of Millipede is that recording density can significantly improve, because must circuit be set at the recording section of each recorded bit data.The now verified recording density that can realize 1 Tbpsi (referring to for example, P.Vettiger, T.Albrecht, M.Despont, U.Drechsler; U.Durig, B.Gotsmann, D.Jubin, W.Haberle; M.A.Lants, H.E.Rothuizen, R.Stutz, D.Wiesmann and G.K.Binnig; P.Bechtold, G.Cherubini, C.Hagleitner, T.Loeliger; A.Panmtazi, H.Pozidis and E.Eleftheriou, Technical Digest, IEDM 03pp.763-766).

For Millipede, once attempted recently through combining MEMS technology and new recording principle to come significantly to improve its power consumption, recording density and travelling speed etc.

For example, once proposed a kind of system that ferroelectric layer is set on recording medium, on recording medium, applied voltage then, thereby caused dielectric polarization in the ferroelectric layer, with record data.According to this system, a kind of theoretical prediction is arranged, can be in order to the gap between the recording section of recorded bit data (record minimum unit) near the unit structure cell level of a crystal.

The minimum unit of hypothetical record is a unit structure cell of ferroelectric layer crystal, and the recording density that obtains is very large about 4Pbsi (micromicro byte (pico bite) per square inch).

Yet,, can carry out the MEMS storer of ferroelectrics record and fail so far to realize though be a kind of conventionally known principle.

Its chief reason is to have been blocked by airborne ion to its outside electric field from recording medium.That is, the electric field that can not perception sends from recording medium, so read operation can not be carried out.

Another reason is, when having lattice imperfection in the crystal, the charge migration that is produced by this lattice imperfection has been blocked electric charge to recording section.

The problem that the electric field that causes because of airborne ion interrupts can solve through using a kind of sweep type nonlinear dielectric microscope (SNDM); And this novel storer obtained in actual use significant progress (reference example as; A.Onoue, S.Hashimoto, Y.Chu; Mat.Sci.Eng.B120,130 (2005)).

Summary of the invention

According to an aspect of the present invention; A kind of data read/write device; Comprise recording layer and to recording layer apply voltage, in recording layer, having a resistance changes and the device of record data, wherein, recording layer is made up of the complex chemical compound with at least two kinds of cation elements; And at least a cation element is to have the not exclusively transitional element of the d track of filling of electronics, and the bee-line between the neighboring cation element is 0.32nm or following.

According to another aspect of the present invention, a kind of data read/write device, comprise recording layer and to recording layer apply voltage, in recording layer, having a resistance changes and the device of record data, wherein; (wherein, A and M are cation elements to first compound that constituting of recording layer: i. is represented by AxMyXz, and X is at least a O of being selected from, S; Se, N, Cl; The element of Br and I, and the mol ratio of x, y and z satisfies 0.5≤x≤1.5,0.5≤y≤2.5 and 1.5≤z≤4.5 respectively); And ii. contains second compound of at least a transitional element, and it has the position, hole of the cation element that can hold first compound.

Description of drawings

Fig. 1 is the figure of declare record principle;

Fig. 2 is the figure of declare record principle;

Fig. 3 is the figure of declare record principle;

Fig. 4 is the view of probe storage device according to an embodiment of the invention;

Fig. 5 is the figure of display recording medium;

Fig. 6 is the figure that shows that the probe storage device writes down;

Fig. 7 is the figure that shows write operation;

Fig. 8 is the figure that shows read operation;

Fig. 9 is the figure that shows write operation;

Figure 10 is the figure that shows read operation;

Figure 11 is the figure of semiconductor memory according to an embodiment of the invention;

Figure 12 is the figure that shows an example of memory cell array structure;

Figure 13 is the figure that shows an example of memory cell structure;

Figure 14 is the figure that shows an example of memory cell array structure;

Figure 15 is the figure that shows an example of memory cell array structure;

Figure 16 is the figure that shows a flash memory application example;

Figure 17 is a circuit diagram of describing the NAND unit elements;

Figure 18 is the figure that shows the structure of NAND unit elements;

Figure 19 is the figure that shows the structure of NAND unit elements;

Figure 20 is the figure that shows the structure of NAND unit elements;

Figure 21 is a circuit diagram of describing the NOR unit;

Figure 22 is the figure that shows the structure of NOR unit;

Figure 23 is a circuit diagram of describing the 2tr unit elements;

Figure 24 is the figure that shows the structure of 2tr unit elements; And

Figure 25 is the figure that shows the structure of 2tr unit elements.

Embodiment

To combine accompanying drawing to describe the data read/write device of one aspect of the invention in detail below.

1. general introduction

(1) in the data read/write device according to first embodiment of the invention, recording layer is made up of the complex chemical compound that contains two kinds of cation elements at least.Wherein at least a cation element regulation is to have the not exclusively transitional element of the d track of filling of electronics, and the bee-line between the neighboring cation element is at 0.32nm or following.

Transitional element with d track that electronics not exclusively fills is, for example, and the Ti of monovalence, divalence or trivalent, the Mn from the monovalence to the sexavalence, the Co from the monovalence to the octavalence, Ni from monovalence to nine valencys.

Bee-line is set in 0.32nm or following reason is the electron transport degree that can improve in the recording layer between the neighboring cation element.

Specifically, recording layer is made up of following material.

A _xM _yX ₄

In the formula, A is at least a Na of being selected from, K, Rb, Be, Mg, Ca, Sr, Ba, Al, Ga, Mn, Fe, Co, Ni, Cu, Zn, Si, P, S, Se, Ge, Ag, Au, Cd, Sn, Sb, Pt, Pd, Hg, Tl, the element among Pb and the Bi.

The preferably at least a Mg that is selected from of A, Al, Mn, Fe, Co, the element among Ni and the Zn.This is because use these elements to make the maintenance optimization of radium ionic crystal structure, can guarantee the ion mobilance simultaneously.

In the formula, M is at least a Al of being selected from, Ga, Ti, Ge, Sn, V, Cr, Mn, Fe, Co, Ni, Nb, Ta, Mo, W, the element among Ru and the Rh.

The preferably at least a V that is selected from of M, Cr, Mn, Fe, the element among Co and the Ni.This is because use these elements can be easy to control the electronic state in the crystal.

A and M are elements differing from each other, and X is the element among at least a O of being selected from and the N.Mol ratio x and y satisfy 0.1≤x≤2.2 and 1.8≤y≤2 respectively.

A _xM _yX ₃

In the formula, A is at least a Na of being selected from, K, Rb, Be, Mg, Ca, Sr, Ba, Al, Ga, Mn, Fe, Co, Ni, Cu, Zn, Ge, Ag, Au, Cd, Sn, Sb, Pt, Pd, Hg, Tl, the element among Pb and the Bi.

A and M are elements differing from each other, and X is the element among at least a O of being selected from and the N.Mol ratio x and y satisfy 0.5≤x≤1.1 and 0.9≤y≤1 respectively.

A _xM _yX ₄In the formula, A is at least a Na of being selected from, K, Rb, Be, Mg, Ca, Sr, Ba, Al, Ga, Mn, Fe, Co, Ni, Cu, Zn, Si, P, S, Se, Ge, Ag, Au, Cd, Sn, Sb, Pt, Pd, Hg, Tl, the element among Pb and the Bi.

The preferably at least a Mg that is selected from of A, Al, Ga, Sb, Ti, Mn, the element among Fe and the Co.This is because use these elements to make the maintenance optimization of radium ionic crystal structure, can guarantee the ion mobilance simultaneously.

In the formula, M is at least a Al of being selected from, Ga, Ti, Ge, Sn, V, Nb, Ta, Cr, Mn, Mo, W, the element among Ir and the Os.

The preferably at least a Cr that is selected from of M, Mn, the element among Mo and the W.This is because use these elements can be easy to control the electronic state in the crystal.

A and M are elements differing from each other, and X is the element among at least a O of being selected from and the N.Mol ratio x and y satisfy 0.5≤x≤2.2 and 0.9≤y≤1 respectively.

With regard to above-mentioned three kinds of material (A _xM _yX ₄, A _zM _yX ₃, A _xM _yX ₄) mol ratio x and y, the lower limit of numerical range is set to be able to keep crystal structure, its upper limit to be set to be able to control the electronic state in the crystal.

In addition, this recording layer adopts a kind of in the following crystal structure:

Spinel (Spinel) structure

Cryptomelane (Cryptomelen) structure

Ilmenite (Ilmenite) structure

Black todorokite (Marokite) structure

Hollandite (Hollandite) structure

Hetairite (Heterolite) structure

The Ramsdelite structure

Delafossite (Delafossite) structure

Peridot (Olivine) structure

α-NaFeO ₂Structure

LiMoN ₂Structure

Through using above-mentioned recording layer, can realize other recording density of Pbpsi level basically, can also realize low power consumption in addition.

(2) in the data read/write device according to second embodiment of the invention, the constituting of recording layer: i. is by A _xM _yX _zFirst compound of expression (wherein, A and M are cation elements, and X is at least a O of being selected from, S, and Se, N, Cl, the element of Br and I, and x, y and z satisfy 0.5≤x≤1.5,0.5≤y≤2.5 and 1.5≤z≤4.5 respectively); And ii. contains second compound of at least a transitional element, and it has the position, hole of the cation element that can hold first compound.

Consisting of of second compound:

i.□xMX ₂

Wherein is the cation element that is contained in the position, hole; M is at least a Ti of being selected from, Ge, Sn, V, Cr, Mn, Fe, Co, Ni, Nb, Ta, Mo, W, Re, the element of Ru and Rh; X is at least a O of being selected from, S, Se, N, Cl, the element of Br and I; And satisfied 0.3≤x≤1;

ii.□xMX ₃

Wherein is the cation element that is contained in the position, hole; M is at least a Ti of being selected from, Ge, Sn, V, Cr, Mn, Fe, Co, Ni, Nb, Ta, Mo, W, Re, the element of Ru and Rh; X is at least a O of being selected from, S, Se, N, Cl, the element of Br and I; And satisfied 1≤x≤2;

iii.□xMX ₄

Wherein is the cation element that is contained in the position, hole; M is at least a Ti of being selected from, Ge, Sn, V, Cr, Mn, Fe, Co, Ni, Nb, Ta, Mo, W, Re, the element of Ru and Rh; X is at least a O of being selected from, S, Se, N, Cl, the element of Br and I; And satisfied 1≤x≤2; And

iv.□xMPOz

Wherein is the cation element that is contained in the position, hole; M is at least a Ti of being selected from, Ge, Sn, V, Cr, Mn, Fe, Co, Ni, Nb, Ta, Mo, W, Re, the element of Ru and Rh; P is the three valent phosphors element; O is an oxygen element; And satisfied 0.3≤x≤3 and 4≤z≤6.

In addition, second compound adopts a kind of in the following crystal structure:

Hollandite (Hollandite) structure

The Ramsdelite structure

Anatase (Anatase) structure

Brookite (Brookite) structure

Pyrolusite (Pyrolusite) structure

ReO ₃Structure

MoO _1.5PO ₄Structure

TiO _0.5PO ₄Structure

FePO ₄Structure

βMnO ₂

γMnO ₂

λMnO ₂

The Fermi level of the electronics of first compound is lower than second compound.This is that the state of requirement recording layer shows as one of condition of nonreversibility.Any Fermi level used herein all is the values that calculate from vacuum level.

2. write down, wipe and reproduce the ultimate principle of operation

(1) below will provide the description of carrying out data recording, wipe and reproducing the ultimate principle of operation in the data read/write device according to first embodiment of the invention.

Fig. 1 is the structural drawing of recording section.

Label 11 expression electrode layers; 12 expression recording layers; 13A representes electrode layer (or protective seam).

Xiao Bai circle expression positive ion on the recording layer 12, little black circle is represented negative ion.Da Bai circle expression transitional element.

When recording layer being applied voltage with generation potential gradient on recording layer 12, some positive ions move in crystal.Therefore, in an embodiment of the present invention, the original state of recording layer 12 is defined as insulator (high-resistance state).Make recording layer 12 undergoing phase transition according to potential gradient, and make recording layer 12 that electric conductivity (formation low resistance state) is provided, thereby accomplish recording operation.

At first, for example, form the electromotive force state lower of electrode layer 13A than the electromotive force of electrode layer 11.If electrode layer 11 is in fixed potential (for example, ground potential), apply negative potential can for electrode layer 13A.

At this moment, be included in the side that some positive ions in the recording layer 12 are moved to electrode layer (negative electrode) 13A, the positive ion in recording layer (crystal) 12 reduces with respect to negative ion to some extent.The positive ion of moving to electrode layer 13A obtains electronics from electrode layer 13A, forms metal level 14 with the metal deposition.

Become excessive at recording layer 12 inner negative ions, the result is that the quantivalency that is included in the transitional element in the recording layer 12 raises.That is, recording layer 12 is owing to the carrier implantation has electronic conductance property, and therefore, record (setting operation) is accomplished.

Reproducing operation can accomplish in the following manner easily, supplies with the resistance value of a current impulse with detection record layer 12 to recording layer 12.But this current impulse must be little of the degree that does not make the material generation resistance variations that constitutes recording layer 12.

Said process is a kind of electrophoresis, considers possibly, and when producing reductive agent when electrode layer (negative electrode) 13A side generation electrochemical reduction, electrode layer (anode) 11 side generation electrochemical oxidations and produce oxygenant.

Therefore,, for example need, use heavy current pulse joule heating recording layer 12 redox reaction to take place to impel recording layer 12 in order to turn back to initial state (high-resistance state) from record attitude (low resistance state).That is to say that recording layer 12 becomes insulator again because of the waste heat of having no progeny in the heavy current pulse (operation of resetting).

Yet for this principle of work of ability practical application, the power consumption that must verify does not at room temperature take place to reset operates (stipulating that sufficiently long retention time at interval) and replacement are operated is enough little.

Last operation can be equal to or greater than divalence through the valence number that positive ion is set.

Back one operation can be accomplished through the transmission channel of the positive ion finding out ionic radius and in recording layer (crystal) 12, move.This recording layer 12 can adopt aforesaid element and crystal structure.

Simultaneously, replacement operation back becomes oxygenant at electrode layer (anode) 11 adnations.Therefore, electrode layer 11 preferably is made up of non-oxidizing material (like conductive nitride or electroconductive oxide) almost.

In addition, the preferred this material that does not have ionic conductivity.

This examples of material comprises following material.Among them, consider most preferably LaNiO from combination properties such as good electrical conductivity ₃

i.MN

In the formula, M is at least a Ti of being selected from, Zr, Hf, V, the element among Nb and the Ta; N is a nitrogen.

ii.MOx

In the formula, M is at least a Ti of being selected from, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Ir, the element among Os and the Pt; Mol ratio " x " satisfies 1≤x≤4.

iii.AMO ₃

In the formula, A is at least a La of being selected from, K, Ca, Sr, the element among Ba and the Ln (lanthanide series);

M is at least a Ti of being selected from, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Ir, the element among Os and the Pt; And

O is an oxygen.

iv.A ₂MO ₄

In the formula, A is at least a K of being selected from, Ca, Sr, the element among Ba and the Ln (lanthanide series);

O is an oxygen.

Reset and become reductive agent at protective seam (negative electrode) 13 adnations after operation is accomplished.Therefore, protective seam 13 preferably has the function that prevents that recording layer 12 and air from reacting.

This examples of material comprises by agraphitic carbon, diamond-like-carbon, SnO ₂Deng the semiconductor of processing.

Electrode layer 13A can play the effect of the protective seam of protection recording layer 12, perhaps can replace electrode layer 13A with protective seam.In this case, protective seam can be insulator or electric conductor.

In order in the operation of resetting, to heat recording layer 12 effectively, preferably zone of heating (resistivity about 10 is set in electrode layer 13A side ^-5Ω cm or above material).

(2) below will provide in the information recording/reproducer according to second embodiment of the invention the description of writing down, wiping with the ultimate principle of information reproduction.

Fig. 2 is the structural drawing of record cell.

Recording layer 12 is arranged on electrode layer 13A side; Be made up of first compound 12A that is expressed as AxMyXz that is arranged on electrode layer 13A side and the second compound 12B that contains at least a transitional element that is arranged on electrode layer 11 sides, this second compound 12B has the position, hole of the positive ion element that can hold first compound.

Specifically, at initial state (Reset Status), the first compound 12A is expressed as AxMyZx.The second compound 12B contains at least a transitional element and has the position, hole of the positive ion element that can hold first compound.

Attitude is being set, and the second compound 12B contains at least a transitional element and is in the state that the position, hole that self exists accommodates the positive ion element of first compound.At this moment, the first compound 12A is in the state that compound is expressed as Ax-uMyXz (elements A being reduced through " u " that produces during to the second compound 12B at migration of element).

Here, in order to simplify purpose of description, the high state of resistance value of initial state (Reset Status) expression recording layer 12 is provided with the low state of resistance value that attitude is represented recording layer 12.

When the second compound 12B is Mg ²⁺Ti ₂ ³⁺O ₄(or Ti ₂ ⁴⁺O ₄) and the first compound 12A is Mn ₂ ⁴⁺O ₄(or Mg ²⁺Mn ₂ ³⁺O ₄) time, the resistance value of initial state (Reset Status) is high, and the resistance value that attitude is set is low.

These regulations do not represent that this embodiment is subject to this.

Even an apparatus structure is identical with another; The resistance value of recording layer 12 changes along with the variation of the type of the first compound 12A and the second compound 12B, can freely be provided with according to product that embodiments of the invention were directed against so that the resistance value of attitude and replacement attitude is set.

Three kinds of ringlets in the recording layer 12 are all represented the positive ion element for every kind, and great circle is represented the negative ion element.

As shown in Figure 3, the first compound 12A and the second compound 12B of formation recording layer 12, each

It can range upon range ofly be two-layer or multilayer more.

When electrode layer 13A is that the electron potential of anode, electrode layer 11 during for negative electrode is applied on this record cell; And when in recording layer 12, producing potential gradient; Part positive ion migration of element among the first compound 12A enters into the second compound 12B of cathode side then in crystal.

Because have the position, hole that can hold the positive ion element in the crystal of the second compound 12B, the positive ion element of therefore moving out from the first compound 12A is contained in these positions, hole.

Therefore, the quantivalency of the positive ion (transitional element) among the first compound 12A rises, and then, the quantivalency of the positive ion (transitional element) among the second compound 12B descends.

Therefore; At initial state (Reset Status); Suppose that each

recording layer

12A and 12B are in high-resistance state (each all becomes the insulation attitude); Part positive ion element among the first compound 12A is moved among the second compound 12B, and recording layer 12 becomes low resistance state (each all becomes conducting element) from current state, so form attitude is set.

In addition; When applying electromotive force on the negative electrode for anode and electrode layer 13A at electrode layer 11; And when in recording layer 12, producing potential gradient, the part positive ion migration of element among the second compound 12B enters into the first compound 12A of cathode side then in crystal.

Because have the position, hole that can hold the positive ion element in the crystal of the first compound 12A, the positive ion element of therefore moving out from the second compound 12B is contained in these positions, hole.

Therefore, the quantivalency of the positive ion (transitional element) among the second compound 12B rises, and the quantivalency of the positive ion (transitional element) among the first compound 12A descends.

Therefore, the part positive ion element among the second compound 12B migrates among the first compound 12A, and recording layer 12 becomes high-resistance state (insulation component) from low resistance state (conducting element), is returned to initial state (Reset Status) then.

As stated, can come control setting/replacement operation through the direction (direction of voltage/current pulse) that is applied to the voltage on the recording layer 12.

In addition, setting/replacement operation also can be through following method control.

Can be through applying the electromotive force operation of resetting on the anode for negative electrode and electrode layer 13A at electrode layer 11.In this case, in recording layer 12, produce potential gradient, then, produce electric current.At this moment, set one and be equal to or less than the value that ion begins to move required voltage, perhaps apply its width and be equal to or less than the pulse voltage that ion can move the required time interval, thereby produce Joule heat.At this moment, the part positive ion migration of element in the second compound 12B then, enters into the first compound 12A (because the electrochemical energy of cathode side is low) of cathode side in crystal.

Because have the position, hole that can hold the positive ion element in the crystal of the first compound 12A, the positive ion element of therefore moving out from the second compound 12B is housed inside these positions, hole.

Therefore, the quantivalency of the positive ion (transitional element) among the second compound 12B rises, and then, the quantivalency of the positive ion (transitional element) among the first compound 12A descends.

Therefore, the conductive carrier that is present in the crystal of each the first compound 12A and the second compound 12B is eliminated, and recording layer 12 becomes high-resistance state (insulation component) from low resistance state (conducting element).

Meanwhile, although electronics is adjourned the first compound 12A from the second compound 12B, the Fermi level of the electronics of the first compound 12A is lower than the Fermi level of the electronics of the second compound 12B.Therefore, the gross energy of recording layer 12 reduces, and above-mentioned Reset Status forms naturally.

In addition, after setting operation is accomplished, form above-mentioned high-energy state.Yet, when the recording layer 12 that uses according to the embodiment of the invention, do not produce under the situation of Joule heat, can continue to keep that attitude being set.

This is because so-called ion transfer resistance role.

The quantivalency of the elements A among the second compound 12B has caused this effect.This element is that divalence has very important significance.

If elements A is univalent element such as Li ion, be difficult to obtain sufficient ion transfer resistance under the attitude being provided with, the positive ion element turns back to the first compound 12A from the second compound 12B at once.In other words, be difficult to obtain sufficiently long retention time.

In addition, suppose that this elements A is the trivalent or the element of high price more, needs to increase to the voltage of setting operation.Therefore, worst case is that crystal damage possibly take place.

Therefore, preferably being provided with wherein, elements A is the information recording/reproducer of divalence.

Simultaneously, after setting operation was accomplished, anode-side generated oxygenant.Therefore, preferably use oxidized hardly material (like electroconductive oxide) as electrode layer 11.

Preferred conduction property oxide does not have ionic conductivity.Such oxide can be enumerated following material.Consider that from the combination property of good electrical conductivity most preferred material is LaNiO ₃

i.MN

In the formula, M is at least a Ti of being selected from, Zr, Hf, V, the element among Nb and the Ta; N is the nitrogen element.

ii.MOx

In the formula, M is at least a Ti of being selected from, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Ir, the element among Os and the Pt; And O is oxygen element, and 1≤x≤4.

iii.AMO ₃

In the formula, A is at least a K of being selected from, Ca, Sr, the element among Ba and the Ln (lanthanide series); M is at least a Ti of being selected from, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Ir, the element among Os and the Pt; And O is an oxygen element.

iv.A ₂MO ₄

Can be through promoting recording layer 12 to be heated and be contained in positive ion element in the position, hole of the above-mentioned second compound 12B to turn back to the operation of resetting of phenomenon among the first compound 12A.

Specifically, utilize Joule heat and waste heat thereof, can make recording layer 12 change high-resistance state (insulation component) into from low resistance state (conducting element) easily, this Joule heat produces through recording layer 12 being applied heavy current pulse.

As stated, heavy current pulse imposes on recording layer 12, and the resistance value of recording layer 12 increases.Therefore, accomplished the operation of resetting.

Here,, importantly to find a kind of material for realizing low power consumption, when carrying out setting operation its ionic radius with can make the positive ion migration of element can not cause crystal damage to the transmission channel in the crystal.

Material and the crystal structure in " general introduction ", described can effectively satisfy this condition and realize low power consumption.

Zone of heating (resistivity about 10 preferably is set usually ^-5Ω cm or above material), with further promotion replacement operation.

In the probe storage device, reducing material is deposited on cathode side.Therefore, sealer is set preferably, reacts with atmosphere preventing.

Zone of heating and sealer can be by forming with above-mentioned both materials with function.For example, semiconductor such as agraphitic carbon, diamond-like-carbon and SnO ₂All with well heater function and surface protection function.

Reproducing operation can be through accomplishing to recording layer 12 supplying electric current pulses easily, then, and the resistance value of detection record layer 12.

But this current impulse must be very little, and is little of the degree that does not make the material generation resistance variations that constitutes recording layer 12.

In the embodiment of Fig. 2 and Fig. 3, the first compound 12A is positioned at electrode layer 13A side, and the second compound 12B is positioned at electrode layer 11 sides, but this configuration also can be reverse.In this case, being applied to the voltage (just/negative voltage) of

electrode layer

11 and 13A also can be reverse when setting/replacement is operated.

3. embodiment

Preferred forms is described now.

With regard to two kinds of situation, promptly embodiments of the invention are applied to the situation and the situation that is applied to semiconductor memory of probe storage device, make description below.

(1) probe storage device

A. structure

What Fig. 4 and Fig. 5 showed all is the probe storage device according to the embodiment of the invention.

Recording medium is arranged on the XY scanner 14.Probe array is with the form setting relative with recording medium.

Probe array comprises that basic unit 23 is arranged on the probe (head) 24 on basic unit 23 fronts with a plurality of with array shape.Each probe 24 is made up of for example cantilever, and is driven by multiplex driver 25 and 26.

Each of a plurality of probes 24 can be included in the miniature driver independent operation in the basic unit 23 through use.Here will provide description with regard to identical total operation and the example of interface that the data area of recording medium is set.

At first, all probes 24 are moved reciprocatingly on directions X with predetermined period, read in the positional information on the Y direction from the servo area of recording medium through multiplex driver 25 and 26.Positional information on the Y direction is sent to driver 15.

Driver 15 drives XY scanner 14 based on this positional information, and recording medium is moved on the Y direction, thus position the record medium and probe.

After accomplished their location, the data read or write operation with the mode of all probes 24 on the data area simultaneously and carry out continuously.

Data read with write operation carries out continuously, and this is because probe 24 is reciprocating at directions X.Data read-write operation is also with respect to the data area, connects the mode of a line by a line, carries out through the position of order change records medium on the Y direction.

Recording medium moves reciprocatingly on directions X with predetermined period, reads positional information from recording medium, and probe 24 can move on the Y direction.

Recording medium is configured to, and for example, basic unit 20, is positioned at the electrode layer 21 in the basic unit 20 and is positioned at the recording layer 22 on the electrode 21.

Recording layer 22 has a plurality of data areas and the servo area that is arranged on the two ends on this a plurality of data areas directions X.The data area has accounted for the major part of recording layer 22.

Servo bursts is recorded in the servo area.Positional information in the servo bursts video data zone on the directions X.

In recording layer 22, except these several information, also be provided with the address area that is used for the recording address data and in order to obtain synchronous lead code.

Data and servo bursts are recorded in the recording layer 22 with recorded bit (resistance fluctuation)." 1 " of recorded bit and the information of " 0 " read through the resistance of surveying recording layer 22.

In this example, a probe (head) is set to related with a data areas, and a probe is set to servo area is made response.

The data area is made up of a plurality of magnetic tracks (track).Magnetic track in the data area is represented by the address signal that reads from the address area.In addition, the servo bursts that reads from servo area is used for making probe 24 move to track center and rejects the reading error of recorded bit.

Here, directions X is corresponding with downtrack and track direction respectively with the Y direction, might utilize HDD position control technology like this.

B. recoding/reproduction operation

Recoding/reproduction operation like Fig. 4 and probe storage device shown in Figure 5 will be described below.

State when Fig. 6 has shown recording operation (setting operation).

The hypothetical record medium is configured to be positioned at electrode layer 21 in the basic unit 20 (like semi-conductor chip), is positioned at the recording layer 22 on the electrode 21 and is positioned at the protective seam 13B on the recording layer 22.Protective seam 13B is made up of for example thin insulator.

Recording operation is accomplished as follows: the recorded bit 27 to recording layer 22 applies a voltage to produce potential gradients in recorded bit 27 inside.Specifically, can current/voltage pulse be applied on the recorded bit 27.

-the first embodiment

First embodiment has showed the material as shown in Figure 1 situation as recording layer of using.

At first, as shown in Figure 7, the electromotive force state lower of formation probe 24 than the electromotive force of electrode layer 21.Suppose that electrode layer 21 is set in fixed potential (for example, ground potential), can apply negative potential to probe 24.

When for example using electronics that source or thermionic source take place, through producing current impulse for electrode layer 21 from probe 24 ejected electrons.

At this moment, for example, in the recorded bit 27 of recording layer 22, some positive ions are moved to probe (negative electrode) 24 sides, and the relative negative ion of the positive ion in the crystal reduces to some extent.The positive ion of in addition, moving to probe 24 sides is accepted to deposit with metal from the electronics of probe 24.

In recorded bit 27, negative ion becomes excessive, and the result is that the valence number of the transitional element in recorded bit 27 raises.That is, the carrier that recorded bit 27 causes because of phase transformation is implanted has electronic conductance property, so recording operation (setting operation) is accomplished.

Can produce the record current pulse by the state higher through the electromotive force that forms a kind of probe 24 than the electromotive force of electrode layer 21.

Fig. 8 has shown the reproduction operation.

Reproduce operation and accomplish in the following manner, supply with the resistance value of a current impulse with detection record position 27 to the recorded bit 27 of recording layer 22.But this current impulse must be very little, little degree to the material generation resistance variations that does not make the recorded bit 27 that constitutes recording layer 22.

For example, supply with recorded bit 27 by the read current (current impulse) that sensor amplifier S/A produces from probe 24, then, the resistance value of recorded bit 27 is measured with this sensor amplifier S/A.

The material of the application of the invention embodiment can be set at the difference that the resistance value between state and Reset Status is set and be equal to or greater than 10 ³

In reproducing operation,, thereby start successively reproducing with the top of probe 24 scan recording medias.

Through recorded bit 27,, wipe (replacement) operation thereby accomplish to promote the oxidation/reduction reaction of recorded bit 27 with heavy current pulse joule heating recording layer 22.

Erase operation can be accomplished on each recorded bit 27, or on a plurality of recorded bit 27, accomplishes to the mode of piece with piece.

-the second embodiment

Second embodiment has showed the material as shown in Figure 2 situation as recording layer of using.

State when Fig. 6 and Fig. 9 have shown record/erase operation.

Being configured to of hypothetical record medium: be positioned at the electrode layer 21 in the basic unit 20 (like semi-conductor chip); Be positioned at the recording layer 22 on the electrode 21; And be positioned at the protective seam 13B on the recording layer 22.Protective seam 13B is made up of for example thin insulator.

Recording operation applies voltage through the recorded bit 27 to recording layer 22 to carry out, and then, produces potential gradient in the inside of recorded bit 27.Specifically, can current/voltage pulse be applied on the recorded bit 27.

In this example, form the electromotive force state higher of probe 24 than the electromotive force of electrode layer 21.Suppose that electrode layer 21 is set in fixed potential (for example, ground potential), can apply positive potential to probe 24.

At this moment, the part positive ion migration of element in first compound (anode-side) of recording layer 22 and is contained in the position, hole of second compound (cathode side) in crystal.

Simultaneously, the quantivalency of the positive ion in first compound (transitional element) rises, and then, the quantivalency of the positive ion in second compound (transitional element) descends.The result is, the recorded bit of recording layer 22 27 changes low resistance state into from high-resistance state, and setting operation (record) is accomplished.

Erase operation forms the electromotive force state lower than the electromotive force of electrode layer 21 of probe 24.Suppose that electrode layer 21 is set in fixed potential (for example, ground potential), can apply negative potential to probe 24.

At this moment, the part positive ion migration of element in first compound (anode-side) of recording layer 22 and is contained in the position, hole of first compound (cathode side) in crystal.

Simultaneously, the quantivalency of the positive ion in second compound (transitional element) rises, and then, the quantivalency of the positive ion in first compound (transitional element) descends.The result is, the recorded bit of recording layer 22 27 changes high-resistance state into from low resistance state, and the operation (wiping) of resetting is accomplished.

With regard to record/erase operation, through making the position relation between first and second compounds reverse, the electromotive force of probe 24 is lower than the electromotive force of electrode layer 21, can carry out setting operation then.

Figure 10 has shown the state when reproducing.

Reproducing operation can carry out through supplying with a current impulse to recorded bit 27, then, and the resistance value of detection record position 27.But this current impulse must be very little, and is little of the degree that does not make the material generation resistance variations that constitutes recorded bit 27.

For example, the read current (current impulse) that relies on sensor amplifier S/A to produce is supplied with recording layer (recorded bit) 22 from probe 24, reads out the resistance value that amplifier S/A measures recorded bit with this.When using aforesaid new material, the difference of the resistance value of setting/Reset Status can be 10 ³Or more than.Can reproduce operation continuously through scan-probe 24.

C. conclusion

According to this probe storage device, can more effectively realize high record density and low power consumption than present hard disk or flash memory.

(2) semiconductor memory

A. structure

Figure 11 has shown the cross-point semiconductor storer of one embodiment of the invention.

Word line WLi-1, WLi and WLi+1 extend along directions X, and bit line BLj-1, BLj and BLj+1 extend along the Y direction.

The end of each word line WLi-1, WLi and WLi+1 all passes through to link to each other with word line driver & demoder 31 as the MOS transistor RSW of selector switch, and each bit line BLj-1, BLj and BLj+1 link to each other with bit line driver & demoder & sensing circuit 32 through the MOS transistor CSW as selector switch.

Input to the grid of MOS transistor RSW in order to selector signal Ri-1, Ri and the Ri+1 that selects word line (OK), input to the grid of MOS transistor CSW in order to selector signal Cj-1, Cj and the Cj+1 of selection bit line (row).

Storage unit 33 is configured in the cross section between each word line WLi-1, WLi and WLi+1 and each bit line BLj-1, BLj and the BLj+1.So-called point of crossing type cell array structure is able to be provided with.

Storage unit 33 also has diode 34, the sneak-out current when being used to prevent the recoding/reproduction operation.

Figure 12 has shown the structure of the memory cell array portion of semiconductor memory shown in Figure 11.

Word line WLi-1, WLi and WLi+1 and bit line BLj-1, BLj and BLj+1 are configured on semiconductor+chip 30, and storage unit 33 and diode 34 are configured in the cross section of these lines.

The characteristics of this point of crossing type cell array structure are to help high integration, because needn't separately MOS transistor be connected to storage unit 33.For example, like Figure 14 and shown in Figure 15, can be with storage unit 33 laminations, thus the memory cell array of three-dimensional structure is provided.

Storage unit 33, for example shown in figure 13, be the stepped construction that constitutes by recording layer 22, protective seam 13B and zone of heating 35.The 1-bit data is with storage unit 33 storages.In addition, diode 34 is configured between word line WLi and the storage unit 33.

For the situation that only changes setting/replacement, preferably reject diode 34 through voltage direction.

B. write, wipe and read operation

To combine Figure 11 and Figure 13 to describe below writes, wipes and read operation.

Here, suppose the storage unit 33 that selected with dashed lines A irises out, then, write, wipe and read operation to the storage unit execution of selecting.

First embodiment

Recording operation (setting operation) can be accomplished as follows, and the storage unit of selecting 33 is applied a voltage, so in storage unit 33, produce potential gradient so that current impulse to be provided.Therefore, for example, form the electromotive force state lower of word line WLi than the electromotive force of bit line BLj.Suppose that bit line BLj is set in fixed potential (for example, ground potential), can apply negative potential to word line WLi.

At this moment, in the selected storage unit 33 of being irised out by dotted line A, some positive ions are moved to word line (negative electrode) WLi side, and the relative negative ion of positive ion that is included in the crystal reduces to some extent.The positive ion of moving to word line WLi side is accepted to deposit with metal from the electronics of word line WLi.

In the selected storage unit 33 of being irised out by dotted line A, it is excessive that negative ion becomes, and the result is that the valence number that is included in the transitional element in the crystal raises.That is, the carrier that the selected storage unit 33 of being irised out by dotted line A causes because of phase transformation is implanted has electronic conductance property, so recording operation (setting operation) is accomplished.

When recording operation, preferably bit line BLj-1, the BLj+1 biasing with all word line WLi-1 that do not select, WLi+1 and not choosing is same electromotive force.

In addition, during holding state before record, preferably all word line WLi-1, WLi and WLi+1 and all bit line BLj-1, BLj and BLj+1 are carried out precharge.

Can produce the record current pulse by the state higher through the electromotive force that forms a kind of word line WLi than the electromotive force of bit line BLj.

Reproduce operation through accomplishing to the resistance value of the selected storage unit of irising out 33 supplying electric current pulses and detection of stored unit 33 by dotted line A.But this current impulse must be very little, and is little of the degree that does not make the material generation resistance variations that constitutes storage unit 33.

For example, supply with the storage unit 33 of being irised out by dotted line A by the read current (current impulse) that sensing circuit produces from bit line BLj, then, the resistance value of storage unit 33 is measured with this sensing circuit.Through using aforesaid new material, the difference that the resistance value between state and Reset Status is set can be set at and be equal to or greater than 10 ³

Through the selected storage unit 33 of irising out by dotted line A,, wipe (replacement) operation thereby accomplish to promote the oxidation/reduction reaction in the storage unit 33 with the heating of heavy current pulse joule.

Second embodiment

In write operation (setting operation), the storage unit of selecting 33 is applied a voltage, in storage unit 33, produce potential gradient, current impulse is provided thus.Therefore, for example, the electromotive force of word line WLi is higher than the electromotive force of bit line BLj.When bit line BLj is set in fixed potential (for example, ground potential), can apply positive potential to word line WLi.

At this moment, in the selected storage unit 33 of being irised out by dotted line A, the part positive ion in first compound migrates in the cavitation area of second compound.Therefore, the quantivalency of the positive ion in first compound (transitional element) rises, and then, the quantivalency of the positive ion in second compound (transitional element) descends.

The result is, storage unit 33 changes low resistance state into from high-resistance state, and setting operation (writing) is accomplished.

When write operation, preferably bit line BLj-1, the BLj+1 biasing with all word line WLi-1 that do not select, WLi+1 and not choosing is same electromotive force.

In addition, during holding state before write operation, preferably all word line WLi-1, WLi and WLi+1 and all bit line BLj-1, BLj and BLj+1 are carried out precharge.

Erase operation (operation of resetting) has utilized Joule heat and waste heat thereof, and Joule heat produces through supplying with heavy current pulse to selected storage unit 33.Therefore, for example, the electromotive force of word line WLi is higher than the electromotive force of bit line BLj.When bit line BLj is set in fixed potential (for example, ground potential), can apply positive potential to word line WLi.

At this moment, in the selected storage unit 33 of being irised out by dotted line A, the part positive ion in second compound migrates in the cavitation area of first compound.Therefore, the quantivalency of the positive ion in second compound (transitional element) rises, and then, the quantivalency of the positive ion in first compound (transitional element) descends.

The result is, storage unit 33 changes high-resistance state into from low resistance state, and the operation (wiping) of resetting is accomplished.

Here, erase operation also can carry out through following method.Yet, in this case, as stated, preferably from as removing diode 34 Fig. 8 and the semiconductor memory shown in Figure 9.

For example, the electromotive force of word line WLi is lower than the electromotive force of bit line BLj.When bit line BLj is set in fixed potential (for example, ground potential), can apply negative potential to word line WLi.

Equally, when erase operation, preferably bit line BLj-1, the BLj+1 biasing with all word line WLi-1 that do not select, Wli+1 and not choosing is same electromotive force.

In addition, during holding state before erase operation, preferably all word line WLi-1, WLi and WLi+1 and all bit line BLj-1, BLj and BLj+1 are carried out precharge.

Through to the selected storage unit of being irised out by dotted line A 33 supplying electric current pulses, the resistance value of detection of stored unit 33 is carried out read operation then.But this current impulse must be very little, and is little of the degree that does not make the material generation resistance variations that constitutes storage unit 33.

For example, supply with the storage unit 33 of being irised out by dotted line A by the read current (current impulse) that sensing circuit produces from bit line BLj, then, the resistance value of storage unit 33 is measured with this sensing circuit.Through adopting aforesaid new material, the difference of the resistance value of setting/Reset Status can be 10 ³Or more than.

C. conclusion

According to this semiconductor memory, might realize higher recording density and lower power consumption being arranged than current hard disk or flash memory.

(3) other

Though this embodiment has been described two kinds of storeies, promptly probe storage device and semiconductor memory also can be applied to material that proposes in the embodiment of the invention and principle such as on the recording mediums such as existing hard disk or DVD.

4. manufacturing approach

Manufacturing approach according to the recording medium of the embodiment of the invention will be described below.

Here, describe as an example with the structure of recording medium shown in Figure 6.

Basic unit 20 is disks of the about 60mm of diameter, thick about 1mm, is processed by glass.In basic unit 20, the Pt (platinum) through the thick about 500nm of vapour deposition is to form electrode layer 21.

On electrode layer 21, at first, under the atmosphere of 300 ℃～600 ℃ atmospheric pressure and Ar (argon gas) 95%, O (oxygen) 25%, use target to carry out the RF magnetron sputtering, the component of target makes deposition ZnMn through adjustment ₂O ₄Thereby formation constitutes the ZnMn of thick about 10nm of recording layer 22 parts ₂O ₄

Subsequently, with the RF magnetron sputtering at ZnMn ₂O ₄The TiO of the thick about 3nm of last formation ₂The result is that recording layer 22 has ZnMn ₂O ₄And TiO ₂Layer structure.

At last, on recording layer 22, form protective seam 13B, thereby accomplished recording medium as shown in Figure 6.

5. experimental example

Describe in the face of experimental example down, wherein, prepared sample, and the resistance difference of resetting between (wiping) state and setting (writing) state is evaluated.

The recording medium that will have structure as shown in Figure 6 is as sample.

Use terminal being sharpened to diameter to 10nm or following probe to estimating.

Such probe contacts to being made for protective seam 13B, writes/wipe operation through an execution using probe centering.Write operation through will be for example the potential pulse of 1V impose on recording layer 22 with the width of 10nsec (nanosecond) and accomplish.Erase operation through will be for example the potential pulse of 0.2V impose on recording layer 22 with the width of 100nsec (nanosecond) and accomplish.

In addition, use the another of probe centering between write operation and erase operation, to carry out read operation.Read operation is through imposing on recording layer 22 with the potential pulse of 0.1V with the width of 10nsec and the resistance value measurement of recording layer (recorded bit) 22 being carried out.

(1) first experimental example

The sample of first experimental example is following.

Electronic shell 21 is to be processed by the Pt film that is formed on the last thick about 500nm of dish.Recording layer 22 is by ZnV ₂O ₄Process, protective seam 13B is diamond-like-carbon (DLC).

The temperature maintenance of dish then, is carried out the RF magnetron sputtering under the atmosphere of atmospheric pressure and 95%Ar and 5%O2 in for example 300 ℃～500 ℃ scopes, thereby on dish, form the ZnV of thick about 10nm ₂O ₄Diamond-like-carbon is to be formed on ZnV through CVD technology for example with the thickness of about 3nm ₂O ₄On.

Resistance value after the write operation is 10 ³The Ω order of magnitude, the resistance value behind the erase operation are 10 ⁷The Ω order of magnitude, both are about 10 by resistance difference ⁴Ω.Empirical tests can leave enough leeway when read operation.

(2) second experimental examples

In second experimental example, except recording layer by ZnCr ₂O ₄Outside processing, adopt with identical sample in first experimental example.

Writing/wiping in same first experimental example of resistance value after operating equally is 10 ³Ω/10 ⁷The Ω order of magnitude, both resistance differences are about 10 ⁴Ω.Empirical tests can leave enough leeway when read operation.

(3) the 3rd experimental examples

In the 3rd experimental example, except recording layer by ZnMn ₂O ₄Outside processing, adopt with identical sample in first experimental example.

(4) the 4th experimental examples

In the 4th experimental example, except recording layer by ZnCo ₂O ₄Outside processing, adopt with identical sample in first experimental example.

(5) the 5th experimental examples

In the 5th experimental example, except recording layer by MgCr ₂O ₄Outside processing, adopt with identical sample in first experimental example.

(6) the 6th experimental examples

In the 6th experimental example, except recording layer by MgMn ₂O ₄Outside processing, adopt with identical sample in first experimental example.

(7) the 7th experimental examples

In the 7th experimental example, except recording layer by MgCo _nO ₄Outside processing, adopt with identical sample in first experimental example.

(8) the 8th experimental examples

In the 8th experimental example, except recording layer by CoMn _nO ₄Outside processing, adopt with identical sample in first experimental example.

(9) the 9th experimental examples

In the 9th experimental example, except recording layer by CaCr _nO ₄Outside processing, adopt with identical sample in first experimental example.

(10) the tenth experimental examples

In the tenth experimental example, except recording layer by CaMn _nO ₄Outside processing, adopt with identical sample in first experimental example.

(11) the 11 experimental examples

In the 11 experimental example, except recording layer by SrMn _nO ₄Outside processing, adopt with identical sample in first experimental example.

(12) the 12 experimental examples,

In the 12 experimental example, except recording layer by Ba _0.25Mn ₂O ₄Outside processing with the lamination of Ba, adopt with identical sample in first experimental example.Ba _0.25Mn ₂O ₄Form with sputtering technology, Ba forms the about 10nm of thickness.

(13) the 13 experimental examples

In the 13 experimental example, except recording layer by Zn _0.25Mn ₂O ₄Outside processing with the lamination of Zn, adopt with identical sample in first experimental example.Zn _0.25Mn ₂O ₄Form with sputtering technology, Zn forms the about 10nm of thickness.

Resistance value in original state is 10 ⁸The Ω order of magnitude, the resistance value after write operation are 10 ³Order of magnitude Ω, in addition, the resistance value after erase operation is 10 ⁷The Ω order of magnitude.The difference of the resistance between write operation and erase operation is 10 ⁴Ω to 10 ⁵Ω.Empirical tests can leave enough leeway when read operation.

(14) the 14 experimental examples

In the 14 experimental example, except recording layer by CuA ₂Outside processing, adopt with identical sample in first experimental example.

Resistance value in original state is 10 ⁸The Ω order of magnitude, the resistance value after write operation are 10 ³Order of magnitude Ω, in addition, the resistance value after erase operation is 10 ⁷The Ω order of magnitude.The difference of the resistance between write operation and erase operation is 10 ³Ω to 10 ⁵Ω.Empirical tests can leave enough leeway when read operation.

(15) the 15 experimental examples

In the 15 experimental example, except recording layer by MgCrO ₃Outside processing, adopt with identical sample in first experimental example.

Resistance value in original state is 10 ⁷The Ω order of magnitude, the resistance value after write operation are 10 ³The Ω order of magnitude, in addition, the resistance value after erase operation is 10 ⁶The Ω order of magnitude.The difference of the resistance between write operation and erase operation is 10 ³Ω to 10 ⁴Ω.Empirical tests can leave enough leeway when read operation.

(16) the 16 experimental examples

In the 16 experimental example, except recording layer by NiWN ₂Process with protective seam by SnO ₂Outside processing, adopt with identical sample in first experimental example.NiWN ₂Be to adopt sputtering technology under atmospheric pressure with in 95%Ar and the 35%NH atmosphere to form.

Resistance value in original state is 10 ⁷The Ω order of magnitude, the resistance value after write operation are 10 ³The Ω order of magnitude, in addition, the resistance value after erase operation is 10 ⁶The Ω order of magnitude.The difference of the resistance between write operation and erase operation is 10 ²Ω to 10 ⁵Ω.Empirical tests can leave enough leeway when read operation.

(17) the 17 experimental examples

In the 17 experimental example, except recording layer by Zn _1.2V _1.8O ₄Process with protective seam by SnO ₂Outside processing, adopt with identical sample in first experimental example.

Resistance value in original state is 10 ⁶The Ω order of magnitude, the resistance value after write operation are 10 ²The Ω order of magnitude, in addition, the resistance value after erase operation is 10 ⁶The Ω order of magnitude.The difference of the resistance between write operation and erase operation is about 10 ⁴Ω.Empirical tests can leave enough leeway when read operation.

(18) the 18 experimental examples

In the 18 experimental example, except recording layer by Zn _1.2Cr _1.8O ₄Process with protective seam by SnO ₂Outside processing, adopt with identical sample in first experimental example.

(19) the 19 experimental examples

In the 19 experimental example, except recording layer by ZnAl _1.8Cr _0.2O ₄Process with protective seam by SnO ₂Outside processing, adopt with identical sample in first experimental example.

Resistance value in original state is 10 ⁸The Ω order of magnitude, the resistance value after write operation are 10 ³The Ω order of magnitude, in addition, the resistance value after erase operation is 10 ⁸The Ω order of magnitude.The difference of the resistance between write operation and erase operation is about 10 ⁵Ω.Empirical tests can leave enough leeway when read operation.

(20) the 20 experimental examples

In the 20 experimental example, except recording layer by ZnAl _1.8Mn _0.2O ₄Process with protective seam by SnO ₂Outside processing, adopt with identical sample in first experimental example.

(21) the 21 experimental examples

In the 21 experimental example, except recording layer by SiNi ₂O ₄Process with protective seam by SnO ₂Outside processing, adopt with identical sample in first experimental example.

(22) the 22 experimental examples

In the 22 experimental example, except recording layer by SeNi ₂O ₄Process with protective seam by SnO ₂Outside processing, adopt with identical sample in first experimental example.

(23) the 23 experimental examples

In the 23 experimental example, except recording layer by NiTiO ₃Process with protective seam by SnO ₂Outside processing, adopt with identical sample in first experimental example.

(24) the 24 experimental examples

Sample explanation in the 24 experimental example as follows.

Recording layer 22 is by the ZnMn of thick about 10nm ₂O ₄TiO with thick about 3nm ₂The rhythmo structure that constitutes is formed.

In this case, the result shows that the resistance value of Reset Status is 10 ⁷The Ω order of magnitude, the resistance value that state is set is 10 ³The Ω order of magnitude.In addition, empirical tests recycles the life-span and can reach and be equal to or greater than 100,000 periods.

(25) the 25 experimental examples

Sample explanation in the 25 experimental example as follows.

(26) the 26 experimental examples

Sample explanation in the 26 experimental example as follows.

Recording layer 22 is by the MgMn of thick about 10nm ₂O ₄TiO with thick about 3nm ₂The rhythmo structure that constitutes is formed.

(27) the 27 experimental examples

Sample explanation in the 27 experimental example as follows.

Recording layer 22 is by the ZnMn of thick about 10nm ₂O ₄ZrO with thick about 3nm ₃The rhythmo structure that constitutes is formed.

(28) the 28 experimental examples

Sample explanation in the 28 experimental example as follows.

Recording layer 22 is by the SrMoO of thick about 10nm ₃ReO with thick about 3nm ₃The rhythmo structure that constitutes is formed.

(29) reference examples

Sample explanation in the reference examples as follows.

Recording layer 22 is only by the ZnMn of the about 10nm of thickness ₂O ₄Constitute.

In this case, the resistance value of Reset Status is 10 ⁷The Ω order of magnitude, the resistance value that state is set is 10 ³The Ω order of magnitude, identical with in first to the 5th experimental example.

Yet it recycles the order of magnitude that the life-span is 100 periods, and empirical tests is more effective to rewrite operation repeatedly according to the structure of the embodiment of the invention.

(30) conclusion

As stated, in the middle of any one sample of the first to the 28 experimental example, can realize basic writing, wipe and read operation.

Table 1 has shown from the checking result of the first to the 28 experimental example and reference examples and has gathered.

Table 1

?

Recording layer material

Crystal structure

Protective seam

Initial resistivity value [Ω]

Record back resistance value [Ω]

Wipe back resistance value [Ω]

First experimental example

ZnV ₂O ₄

Spinel

DLC

10 ⁷

10 ³

10 ⁷

Second experimental example

ZnCr ₂O ₄

Spinel

DLC

10 ⁷

10 ³

10 ⁷

The 3rd experimental example

ZnMn ₂O ₄

Spinel (hetairite)

DLC

10 ⁷

10 ³

10 ⁷

The 4th experimental example

ZnCo ₂O ₄

Spinel

DLC

10 ⁷

10 ³

10 ⁷

The 5th experimental example

MgCr ₂O ₄

Spinel

DLC

10 ⁷

10 ³

10 ⁷

The 6th experimental example

MgMn ₂O ₄

Spinel

DLC

10 ⁷

10 ³

10 ⁷

The 7th experimental example

MgCo ₂O ₄

Spinel

DLC

10 ⁷

10 ³

10 ⁷

The 8th experimental example

CoMn ₂O ₄

Spinel

DLC

10 ⁷

10 ³

10 ⁷

The 9th experimental example

CaCr ₂O ₄

Black todorokite

DLC

10 ⁷

10 ³

10 ⁷

The tenth experimental example

CaMn ₂O ₄

Black todorokite

DLC

10 ⁷

10 ³

10 ⁷

The 11 experimental example

SrMn ₂O ₄

Cryptomelane

DLC

10 ⁷

10 ³

10 ⁷

The 12 experimental example

Ba _0.25Mn ₂O ₄+Ba

Cryptomelane

DLC

10 ⁷

10 ³

10 ⁷

The 13 experimental example

Zn _0.25Mn ₂O ₄+Zn

Ramsdelite

DLC

10 ⁸

10 ³

10 ⁷

The 14 experimental example

CuAlO ₂

Delafossite

DLC

10 ⁸

10 ³

10 ⁶

The 15 experimental example

MgCrO ₃

Ilmenite

DLC

10 ⁷

10 ³

10 ⁶

The 16 experimental example

NiWN ₂

LiMoN ₂

SnO ₂

10 ⁷

10 ³

10 ⁵

[0426]

The 17 experimental example

Zn _1.2V _1.8O ₄

Spinel

SnO ₂

10 ⁶

10 ²

10 ⁶

The 18 experimental example

Zn _1.2Cr _1.8O ₄

Spinel

SnO ₂

10 ⁶

10 ²

10 ⁶

The 19 experimental example

ZnAl _1.8Cr _0.2O ₄

Spinel

SnO ₂

10 ⁸

10 ³

10 ⁸

The 20 experimental example

ZnAl _1.8Mn _0.2O ₄

Spinel

SnO ₂

10 ⁸

10 ³

10 ⁸

The 21 experimental example

SiNi ₂O ₄

Peridot

SnO ₂

10 ⁸

10 ³

10 ⁵

The 22 experimental example

SeNi ₂O ₄

Peridot

SnO ₂

10 ⁸

10 ³

10 ⁵

The 23 experimental example

NiTiO ₃

Ilmenite

SnO ₂

10 ⁸

10 ³

10 ⁵

The 24 experimental example

ZnMn ₂O ₄/TiO ₂

λMnO ₂(TiO ₂)

DLC

10 ⁷

10 ³

10 ⁷

The 25 experimental example

ZnMn ₂O ₄/ZrO ₂

λMnO ₂(TiO ₂)

DLC

10 ⁷

10 ³

10 ⁷

The 26 experimental example

MgMn ₂O ₄/TiO ₂

λMnO ₂(TiO ₂)

DLC

10 ⁷

10 ³

10 ⁷

The 27 experimental example

MgMn ₂O ₄/ZrO ₂

λMnO ₂(TiO ₂)

DLC

10 ⁷

10 ³

10 ⁷

The 28 experimental example

SrMoO ₃/ReO ₃

ReO ₃(ReO ₃)

DLC

10 ⁷

10 ³

10 ⁷

Reference examples

ZnMn ₂O ₄

Spinel (hetairite)

DLC

10 ⁷

10 ³

10 ⁷

6. be applied to flash memory

(1) structure

Embodiments of the invention can be applied to flash memory.

Figure 16 has shown the storage unit of flash memory.

The storage unit of flash memory is made up of metal-insulator semiconductor (MIS) transistor.

Diffusion layer 42 is formed in the surface region of base semiconductor 41.Gate insulation layer 43 is formed on the channel region between the diffusion layer 42.Recording layer (RRAM: resistance R AM) 44 be formed on the gate insulation layer 43 according to the embodiment of the invention.Control grid electrode 45 is formed on the recording layer 44.

Base semiconductor 41 can be a well area, and base semiconductor 41 has reciprocal conductivity type with diffusion layer 42.Control grid electrode 45 obtains as word line, and is made up of for example electric conductivity polysilicon.

Recording layer 44 is made up of Fig. 1, Fig. 2 or material shown in Figure 3.

(2) basic operation

To combine Figure 16 to describe basic operation below.

Through control grid electrode 45 being applied electromotive force V1, base semiconductor 41 is applied electromotive force V2 carrying out setting (writing) operation.

The difference of electromotive force V1 and V2 will be wide enough so that recording layer 44 produces phase transformation or resistance variations, but to the not special restriction of its direction.

That is to say that V1＞V2 or V1＜V2 all can.

For example, suppose at initial state (Reset Status) that recording layer 44 is made up of insulator (big resistance), gate insulation layer 43 is thickening basically, makes the threshold value of storage unit (MIS transistor) raise.

So that recording layer 44 when becoming electric conductor (small resistor), gate insulation layer 43 attenuation basically makes the threshold values of storage unit (MIS transistor) reduce when applying electromotive force V1 and V2 with this state.

Though on base semiconductor 41, applied electromotive force V2, electromotive force V2 can be sent to the channel region of storage unit on the contrary from diffusion layer 42.

Through control grid electrode 45 being applied electromotive force V1 ', diffusion layer 42 is applied electromotive force V3, and to another diffusion layer 42 apply electromotive force V4 (＜V3) carry out replacement (wiping) operation.

Electromotive force V1 ' is set at the value that surpasses the threshold value of storage unit under the attitude being provided with.

At this moment, storage unit is got to ON, and electronics flows to diffusion layer 42 from another diffusion layer 42, produces thermoelectron simultaneously.Because thermoelectron is to be implanted in the recording layer 44 through gate insulation layer 43, the temperature of recording layer 44 rises.

By this way, recording layer 44 is changed to insulator (big resistance) from electric conductor (small resistor).Therefore, insulation course 43 is thickening basically, and the threshold value of storage unit (MIS transistor) raises like this.

By this way, owing to the storage unit threshold value can change according to the principle that is similar to flash memory, thereby be able to the information recording/reproducer of practical application according to the embodiment of the invention.

(3) NAND (with non-) type flash memory

What Figure 17 showed is the circuit diagram of NAND unit elements.What Figure 18 showed is the structure according to the NAND unit elements of the embodiment of the invention.

Regional 41b of N type trap (N-well) and the regional 41c of P type trap (P-well) are formed among the 41a of P-type semiconductor basic unit.NAND unit according to the embodiment of the invention is formed among the P type well area 41c.

Constituting of NAND unit elements: the NAND string of forming by the storage unit MCs of a plurality of series connection; Select gate transistor ST for two altogether, each all links to each other with the two ends of NAND string.

Each storage unit MC has identical structure with selection transistor ST.Specifically, these elements each be configured to: n type diffused layer 42; Gate insulation layer 43 on the channel region between the n type diffused layer 42; Be positioned at the recording layer (PRAM) 44 on the gate insulation layer 43; And be positioned at the control grid electrode 45 on the recording layer 44.

The state (insulator/electric conductor) of the recording layer 44 of storage unit MC can change according to above-mentioned basic operation.On the contrary, the recording layer 44 of selection gate transistor ST is fixed on attitude is set, i.e. electric conductor (small resistor).

Select among the gate transistor STs one to link to each other with source line SL, another then links to each other with bit line BL.

Suppose that all storage unit in the NAND unit elements were in Reset Status (big resistance) before (writing) operation is set.

(writing) operation is set to be carried out to the storage unit that is positioned at bit line BL side from the storage unit MC that is positioned at source line SL side with the mode of stepping in proper order.

To write electromotive force V1 (positive potential) and be applied on the selected word line WL (control grid electrode), will shift electromotive force Vpass (electromotive force when storage unit MC gets to ON) and be applied on the unselected word line WL.

The selection gate transistor ST that is positioned at source line SL side gets to OFF, and the selection gate transistor ST that is positioned at bit line BL side gets to ON, makes routine data be transferred into the channel region of selected storage unit MC from bit line BL.

For example, when the routine data that obtains is " 1 ", taboo is write the channel region that electromotive force (for example, equaling the electromotive force of V1 basically) is sent to selected storage unit MC, so that the resistance value of the recording layer 44 of selected storage unit MC becomes low resistance state from high-resistance state.

In addition, when the routine data that obtains is " 0 ", with V2 (＜V1) be sent to the channel region of selected storage unit MC, so that the resistance value of the recording layer 44 of selected storage unit MC becomes low resistance state from high-resistance state.

In (wiping) operation of resetting, for example, V1 ' is applied on all word line WLs (control grid electrode), and all the storage unit MCs in the NAND unit elements get to ON.In addition, select gate transistor STs to be got to ON for two so that V3 is applied to that bit line BL goes up and V4 (＜V3) be applied on the line SL of source.

At this moment, thermoelectron is implanted in this recording layer 44 of storage unit MCs all in the NAND unit elements.Therefore, in batches to the operation of resetting of all the storage unit MCs in the NAND unit elements.

In the structure of Figure 18, select gate transistor ST to have the structure identical with storage unit MC.Yet, for example shown in figure 19, select gate transistor ST also can form the general MIS transistor that does not have recording layer.

Figure 20 has shown the remodeling embodiment of NAND type flash memory.

The characteristics of this remodeling embodiment be each constitute NAND string the gate insulation layer of a plurality of storage unit MC replace with p type semiconductor layer 47.

Along with the progress of high integration, if storage unit MC dimension shrinks, p type semiconductor layer 47 under the state that no-voltage applies by the depletion layer filling.

When (writing) operation is set, the control grid electrode 45 of selected storage unit MC is applied the positive electromotive force (for example 3.5v) that writes, and the control grid electrode 45 of unselected storage unit MC is applied positive transfer electromotive force (for example 1V).

At this moment, the surface of the P type well area 41c of a plurality of storage unit MC in the NAND string is changed the N type into from the P type, and forms raceway groove.

Then, as stated, when the selection gate transistor ST that is positioned at bit line BL side is got to ON, and routine data " 0 " is able to carry out setting operation when bit line BL transfers to the channel region of selected storage unit MC.

Through all control grid electrodes 45 are applied negative wipe electromotive force (as-3.5V); Can be in batches to all storage unit MC that constitute the NAND string (wiping) operation of resetting; Then, apply ground potential (0V) on P type well area 41c and p type semiconductor layer 47.

When read operation; The control grid electrode 45 of selected storage unit MC is applied the positive electromotive force (for example 0.5V) of reading; And the control grid electrode 45 of unselected storage unit MC applied shift electromotive force (for example 1V); Shift under the electromotive force, at this always data are " 0 " or " 1 " no matter storage unit MC is got to ON.

Yet, the starting voltage Vth of storage unit MC under one state " 1 " supposition is at 0V＜Vth " 1 "＜scope of 0.5V in, storage unit MC is at the starting voltage Vth under " 0 " attitude " 0 " supposition is at 0.5V＜Vth " 0 "＜scope of 1V in.

In addition, select gate transistor ST to get to ON, then, act in collusion to make each other's confessions to read current for two to NAND.

When forming this situation, to NAND act in collusion to make each other's confessions to the value of the magnitude of current data of storing in according to selected storage unit MC change.Therefore, can be through detecting this variation sense data.

In this remodeling embodiment, the hole doping that requires p type semiconductor layer 47 is bigger than P type well area 41c's, and the Fermi level of p type semiconductor layer 47 is than dark about 0.5V of P type well area 41c.

This is because when control grid electrode 45 is applied positive potential, taken place from the reverse of P type to the N type from the surface portion of the P type well area 41c between n type diffused layer 42, and formed raceway groove.

Through like this, for example, when write operation, only on the interface between P type well area 41c and the p type semiconductor layer 47, form the raceway groove of unselected storage unit MC.When read operation, only form the raceway groove of a plurality of storage unit MC in the NAND string on the interface between P type well area 41c and p type semiconductor layer 47.

That is, even the recording layer 44 of storage unit MC is conducting element (being provided with under the attitude), diffusion layer 42 can short circuit with control grid electrode 45 yet.

(4) NOR (or non-) type flash memory

What Figure 21 showed is the circuit diagram of NOR unit elements.What Figure 22 showed is the structure according to the NOR unit elements of the embodiment of the invention.

N type well area 41b and P type well area 41c are formed among the 41a of P-type semiconductor basic unit.NOR unit according to the embodiment of the invention is formed among the P type well area 41c.

Each NOR unit is by constituting at a storage unit (MIS transistor) MC that is connected between bit line D1 and source line SL.

Each storage unit MCs is configured to: n type diffused layer 42; Gate insulation layer 43 on the raceway groove between the n type diffused layer 42; Be positioned at the recording layer (PRAM) 44 on the gate insulation layer 43; And be positioned at the control grid electrode 45 on the recording layer 44.

The state (insulator/electric conductor) of the recording layer 44 of storage unit MCs can change according to above-mentioned basic operation.

(5) 2tr haplotype flash memory

What Figure 23 showed is the circuit diagram of 2tr unit elements.What Figure 24 showed is the structure according to the 2tr unit elements of the embodiment of the invention.

The 2tr unit elements has developed into the new cellular construction of the characteristics that have NAND unit elements and NOR unit elements concurrently.

N type well area 41b and P type well area 41c are formed among the 41a of P-type semiconductor basic unit.2tr unit elements according to the embodiment of the invention is formed among the P type well area 41c.

The 2tr unit elements is made up of the selection gate transistor ST of a storage unit MC and a series connection.

Each storage unit MC has identical structure with selection gate transistor ST.Specifically, these elements each be configured to: n type diffused layer 42; Gate insulation layer 43 on the channel region between the n type diffused layer 42; Be positioned at the recording layer (PRAM) 44 on the gate insulation layer 43; And be positioned at the control grid electrode 45 on the recording layer 44.

The state (insulator/electric conductor) of the recording layer 44 of storage unit MC can change according to above-mentioned basic operation.On the contrary, the recording layer 44 of selection gate transistor ST is fixed on attitude is set, promptly at electric conductor (small resistor).

Select gate transistor ST to link to each other with source line SL, storage unit MC then links to each other with bit line BL.

The state (insulator/electric conductor) of the recording layer 44 of storage unit MC can change according to above-mentioned basic operation.

In the structure of Figure 24, select gate transistor ST to have the structure identical with storage unit MC.Yet, for example shown in figure 25, select gate transistor ST also can form the general MIS transistor that does not have recording layer.

Other

According to embodiments of the invention, only (record cell) writes down (writing) operation in the position that has applied electric field.Therefore, data can be recorded in very little zone with low-down power consumption.

In addition, erase operation is accomplished through applying heat.Yet during the material that in using the embodiment of the invention, proposes, recurring structure changes hardly, therefore can carry out erase operation with low-down power consumption.

In addition, according to embodiments of the invention, initial state (insulator) can exist with the most stable energy state.After write operation, electric conductor partly is formed in the insulator.Therefore, when read operation, current concentration partly flows through at electric conductor, might realize having the recording principle of very high sensing efficient.

As stated, according to embodiments of the invention, although the data recording of the recording density that also can carry out with very simple mechanism can not accomplishing in the prior art.Therefore, embodiments of the invention have the huge industrial advantage that can break through the technology of the recording density that has nonvolatile memory now as the next generation.

Other advantage is expected the person skilled in the art with remodeling easily.Therefore, the present invention is not limited to the exemplary embodiment and the details that show and describe here with regard to the aspect of broad.Therefore, under the situation of aim that does not break away from the defined total inventive concept of appended claim and equivalents thereof and scope, can carry out various improvement.

Claims

1. data read/write device, it comprises:

Recording layer; With

In order to said recording layer is applied voltage, in said recording layer, having a resistance changes and the device of record data,

Wherein, consisting of of said recording layer:

I. first compound of representing by AxMyXz, wherein, A and M are cation elements, X is at least a O of being selected from, S, Se, N, Cl, the element of Br and I, and mol ratio x, y and z satisfy 0.5≤x≤1.5,0.5≤y≤2.5 and 1.5≤z≤4.5 respectively; And

Ii. second compound that contains at least a transitional element, it has the position, hole of the cation element that can hold said first compound.

2. data read/write device as claimed in claim 1 is characterized in that, said device comprises that the part applies the magnetic head that voltage is given said recording layer.

3. data read/write device as claimed in claim 1 is characterized in that, said device comprises word line and the bit line that is clipped between the recording layer.

4. data read/write device as claimed in claim 1 is characterized in that said device comprises the MIS transistor, and said recording layer is arranged between transistorized gate electrode of said MIS and the gate insulation layer.

5. data read/write device as claimed in claim 1; It is characterized in that; Said device comprises the first conductive-type semiconductor basic unit, and two second conductive type diffusion layers that are arranged in the said base semiconductor are arranged on the said base semiconductor and the semiconductor layer in the zone between said two diffusion layers; And in order to control the gate electrode that said two diffusion layers connect or break off, wherein said recording layer is arranged between said gate electrode and the said semiconductor layer.

6. data read/write device as claimed in claim 3 is characterized in that it further comprises:

The diode of setting up for said recording layer.

7. data read/write device as claimed in claim 3 is characterized in that it further comprises:

The zone of heating that is used for heating said recording layer of setting up for said recording layer.

8. data read/write device as claimed in claim 1 is characterized in that it further comprises:

Be arranged on the electrode layer on face of said recording layer; And

Be arranged on the protective seam on the said recording layer another side.

9. data read/write device as claimed in claim 8 is characterized in that said protective seam has the function that prevents that said recording layer and atmosphere from reacting.

10. data read/write device as claimed in claim 1 is characterized in that, the consisting of of said second compound:

□xMX ₂

Wherein is the cation element that is contained in the position, hole; M is at least a Ti of being selected from, Ge, Sn, V, Cr, Mn, Fe, Co, Ni, Nb, Ta, Mo, W, Re, the element of Ru and Rh; X is at least a O of being selected from, S, Se, N, Cl, the element of Br and I; And satisfied 0.3≤x≤1.

11. data read/write device as claimed in claim 1 is characterized in that, the consisting of of said second compound:

□xMX ₃

Wherein is the cation element that is contained in the position, hole; M is at least a Ti of being selected from, Ge, Sn, V, Cr, Mn, Fe, Co, Ni, Nb, Ta, Mo, W, Re, the element of Ru and Rh; X is at least a O of being selected from, S, Se, N, Cl, the element of Br and I; And satisfied 1≤x≤2.

12. data read/write device as claimed in claim 1 is characterized in that, the consisting of of said second compound:

□xMX ₄

13. data read/write device as claimed in claim 1 is characterized in that, the consisting of of said second compound:

□xMPOz

14. data read/write device as claimed in claim 1 is characterized in that, said second compound has a kind of in the following structure: hollandite structure, Ramsdelite structure, anatase structured, brookite structure, pyrolusite structure, ReO ₃Structure, MoO _1.5PO ₄Structure, TiO _0.5PO ₄Structure, FePO ₄Structure, β MnO ₂Structure, γ MnO ₂Structure and λ MnO ₂Structure.

15. data read/write device as claimed in claim 1 is characterized in that the Fermi level of the electronics of said first compound is lower than the Fermi level of the electronics of said second compound.

16. data read/write device as claimed in claim 8 is characterized in that, the consisting of of said electrode layer:

MN

Wherein M is at least a Ti of being selected from, Zr, Hf, V, the element among Nb and the Ta; N is a nitrogen.

17. data read/write device as claimed in claim 8 is characterized in that, the consisting of of said electrode layer:

MOx

Wherein M is at least a Ti of being selected from, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Ir, the element among Os and the Pt; Mol ratio x satisfies 1≤x≤4.

18. data read/write device as claimed in claim 8 is characterized in that, the consisting of of said electrode layer:

AMO ₃

Wherein A is at least a La of being selected from, K, Ca, Sr, the element among Ba and the Ln (lanthanide series);

O is an oxygen.

19. data read/write device as claimed in claim 8 is characterized in that, the consisting of of said electrode layer:

A ₂MO ₄

Wherein A is at least a K of being selected from, Ca, Sr, the element among Ba and the Ln (lanthanide series);

O is an oxygen.

20. data read/write device as claimed in claim 8 is characterized in that said protective seam is made up of the material that is selected from agraphitic carbon, diamond-like-carbon and the semiconductor.