CN101483187A - Electro-optical device and electronic apparatus - Google Patents

Abstract

An electro-optical device comprising a first substrate, a second substrate facing the first substrate, a light-emitting layer arranged between the first substrate and the second substrate which is capable of emitting light from a plurality of pixels including at least a first subpixel and a second subpixel, the first subpixel forming a first image and the second subpixel forming a second image, and a light-shielding layer arranged between the second substrate and the light-emitting layer having an opening which is capable of transmitting light emitted from a first subpixel in the light-emitting layer through the second substrate to a first range and transmitting light emitted from the second subpixel of the light-emitting layer through the second substrate to a second range.

Description

Electro-optical device and electronic equipment

Technical field

The present invention relates to electro-optical device and electronic equipment.

Background technology

In the past, as a kind of electro-optical device, known organic EL (Electro Luminescence) device.In addition,, have, can show the display unit of stereo-picture by alternately cover light by the pair of right and left liquid crystal cell from organic EL as organic El device.(for example with reference to patent documentation 1).

[patent documentation 1] TOHKEMY 2001-318341 communique

At this, use sectional view to describe, in display unit, show the structure of different separately images at both direction with organic EL and a pair of liquid crystal cell.Shown in Figure 27 (a), this display unit 600 has organic EL 601 and a pair of liquid crystal cell 603.A pair of liquid crystal cell 603 is relative with an organic EL, has the first liquid crystal cell 603a and the second liquid crystal cell 603b.

When the second liquid crystal cell 603b is the blocking state, spread all over first scope 605 from the light of organic EL 601.At this moment, if on organic EL 601, form first image, then can be from first scope, 605 visual confirmations, first image.

In addition, when the second liquid crystal cell 603a is the blocking state, shown in Figure 27 (b), spread all over second scope 607 from the light of organic EL 601.At this moment, if on organic EL 601, form second image, then can be from second scope, 607 visual confirmations, second image.

In addition, alternately switch the blocking state between the first liquid crystal cell 603a and the second liquid crystal cell 603b, and alternately form first image and second image at organic EL 601, first image and second image are continuous images by visual confirmation respectively thus.

At this, first scope 605 and second scope 607 shown in Figure 28 (a), have overlapped scope 611.Can under being overlapping state, first image and second image carry out visual confirmation from this scope 611 to them.

From the scope 613a of the scope of removing 611 of first scope 605, only can visual confirmation first image.Similarly, remove the scope 613b of scope 611 from second scope 607, only can visual confirmation second image.Scope 613a and scope 613b are called effective range (Fitness Visual Fan Wall respectively) 613a and effective range 613b.

These effective ranges 613a and effective range 613b shown in Figure 28 (b), can obtain enlarging by the distance L that shortens between organic EL 601 and a pair of liquid crystal cell 603.

Yet, in the display unit that above-mentioned patent documentation 1 is put down in writing, between organic EL and liquid crystal cell, glass substrate is arranged.Therefore, in order in this display unit, to shorten above-mentioned distance L, have to make the glass substrate attenuation.But, make glass substrate attenuation meeting cause the reduction of substrate intensity, can cause a lot of disadvantages such as rate of finished products reduction, manufacturing time prolongation, quality reduction.

That is, in existing display unit, exist to be difficult to enlarge the so unsolved problem of effective range.

Summary of the invention

The present invention finishes at least a portion that solves above-mentioned problem, can or be suitable for routine and accomplished as following mode.

(being suitable for example 1) a kind of electro-optical device, it comprises: first substrate; Second substrate relative with described first substrate; The luminescent layer that between described first substrate and described second substrate, is provided with; And the light shield layer that between described second substrate and described luminescent layer, is provided with, described luminescent layer is controlled luminous in each described pixel of a plurality of pixels, described a plurality of pixel comprises first pixel that forms first image and second pixel that forms second image at least, be provided with peristome at described light shield layer, in the described peristome by arriving the light of first scope via described second substrate, and by arrive the light of second scope via described second substrate from the described luminescent layer of described second pixel from the described luminescent layer of described first pixel.

The electro-optical device that should be suitable for example has first substrate, second substrate, luminescent layer and light shield layer.Second substrate is relative with first substrate.Luminescent layer is arranged between first substrate and second substrate, and control is luminous in each pixel of a plurality of pixels.A plurality of pixels comprise first pixel that forms first image and second pixel that forms second image at least.Light shield layer is arranged between second substrate and the luminescent layer.Be provided with peristome at light shield layer.Peristome is by arriving the light of first scope from the luminescent layer of first pixel via second substrate, and by arrive the light of second scope via second substrate from the luminescent layer of second pixel.

Thus, can carry out visual confirmation to first image that forms by first pixel, can carry out visual confirmation to second image that forms by second pixel from second scope from first scope.Therefore, in this electro-optical device, can carry out directive property at both direction at least and show.

At this, light shield layer is arranged between second substrate and the luminescent layer.That is, light shield layer is between first substrate and second substrate.Therefore, be configured in first substrate with light shield layer and compare, can shorten the distance between a plurality of pixels and the light shield layer with the situation in the outside of second substrate.Thereby, in this electro-optical device, can easily enlarge the effective range of all directions of carrying out the directive property demonstration.

(being suitable for example 2) above-mentioned electro-optical device is characterized in that, comprising: first electrode, and it is oppositely arranged with described luminescent layer between described first substrate and described luminescent layer; Second electrode, it is oppositely arranged with described luminescent layer between described luminescent layer and described light shield layer; And switch element, itself and the corresponding setting of each described pixel, to switching to the supply and the blocking of another electric current that flows of described first electrode and described second electrode from described first electrode and described second electrode one via described luminescent layer, described switch element is arranged between described first substrate and the described luminescent layer.

The electro-optical device that should be suitable for example has first electrode, second electrode and switch element.First electrode is arranged between first substrate and the luminescent layer.Second electrode is arranged between luminescent layer and the light shield layer.First electrode is relative with luminescent layer respectively with second electrode.The corresponding setting of switch element with each pixel.Switch element is to switching to the supply and the blocking of another electric current that flows of first electrode and second electrode from first electrode and second electrode one via luminescent layer.

And, in this electro-optical device, owing to switch element is arranged between first substrate and the luminescent layer, so can not blocked by switch element from the light of luminescent layer towards second substrate.Thereby, can easily improve utilization ratio from the light of luminescent layer.

(being suitable for example 3) above-mentioned electro-optical device is characterized in that: between described luminescent layer and described light shield layer resin bed is arranged.

In this suitable example, between luminescent layer and light shield layer, resin bed is arranged.Utilize resin bed, for example compare, can easily adjust thickness with glass substrate etc.Thereby, in this electro-optical device,, can easily adjust effective range by adjusting the thickness of resin bed.

(being suitable for example 4) a kind of electro-optical device, it comprises: first substrate; Second substrate relative with described first substrate; Luminescent layer, it is arranged between described first substrate and described second substrate, and control is luminous in each described pixel of a plurality of pixels; Light shield layer, it is arranged between described second substrate and the described luminescent layer; First electrode, it is oppositely arranged with described luminescent layer between described first substrate and described luminescent layer; Second electrode, it is oppositely arranged with described luminescent layer between described luminescent layer and described light shield layer; Transistor, itself and the corresponding setting of each described pixel are to controlling to another electric current that flows of described first electrode and described second electrode from described first electrode and described second electrode one via described luminescent layer; And power line, it is arranged between described another substrate and described first electrode, to a plurality of described transistor supply capabilities, described a plurality of pixel comprises first pixel that forms first image and second pixel that forms second image at least, described first pixel and described second pixel are alternately arranged at first direction under the situation of overlooking, be provided with peristome at described light shield layer, in the described peristome by arrive the light of first scope via described second substrate from the described luminescent layer of described first pixel, and by arriving the light of second scope from the described luminescent layer of described second pixel via described second substrate, described power line extends along described first direction.

The electro-optical device that should be suitable for example has first substrate, second substrate, luminescent layer, light shield layer, first electrode, second electrode, transistor and power line.Second substrate is relative with first substrate.Luminescent layer is arranged between first substrate and second substrate, and control is luminous in each pixel of a plurality of pixels.Light shield layer is arranged between second substrate and the luminescent layer.First electrode is arranged between first substrate and the luminescent layer.Second substrate is arranged between luminescent layer and the light shield layer.First electrode is relative with luminescent layer respectively with second electrode.Each pixel of transistor AND gate is corresponding to be provided with.Transistor is to controlling to another electric current that flows of first electrode and second electrode from first electrode and second electrode one via luminescent layer.Power line is arranged between first substrate and second substrate, to a plurality of transistor supply capabilities.

In this electro-optical device, first pixel and second pixel are alternately arranged at first direction under the situation of overlooking.In addition, be provided with peristome at light shield layer, in the described peristome by arriving the light of first scope via second substrate, and by arrive the light of second scope via second substrate from the luminescent layer of second pixel from the luminescent layer of first pixel.Therefore, from first scope, first image that the energy visual confirmation is formed by first pixel, from second scope, second image that the energy visual confirmation is formed by second pixel.Therefore, in this electro-optical device, can carry out directive property at both direction at least and show.

In this electro-optical device, light shield layer is arranged between second substrate and the luminescent layer.That is, light shield layer is between first substrate and second substrate.Therefore, be configured in first substrate with light shield layer and compare, can shorten the distance between a plurality of pixels and the light shield layer with the situation in the outside of second substrate.Thereby, in this electro-optical device, can easily enlarge the effective range of all directions of carrying out the directive property demonstration.

In this electro-optical device, power line extends along first direction between first substrate and first electrode.Therefore, for example compare, can easily shorten pixel interval each other with the situation that power line extends each other along adjacent pixels.Thus, can easily improve the quantity (below be called picture element density) of the pixel of per unit area.As a result, can realize easily that the height in the directive property demonstration becomes more meticulous.

(embodiment 5) above-mentioned electro-optical device is characterized in that: between above-mentioned luminescent layer and above-mentioned light shield layer resin bed is arranged.

In this suitable example, between luminescent layer and light shield layer, resin bed is arranged.Utilize resin bed, for example compare, can easily adjust thickness with glass substrate etc.Thereby, in this electro-optical device,, can easily adjust effective range by adjusting the thickness of resin bed.

(being suitable for example 6) above-mentioned electro-optical device is characterized in that, comprising: a plurality of control lines; A plurality of holding wires; Capacity cell, itself and the corresponding setting of each described pixel keep the current potential of described transistorized grid; And switch element, it is arranged between the described holding wire and each described capacity cell among described a plurality of holding wire, controlled by the control signal that one among described a plurality of control lines described control line is supplied with, described capacity cell, it is arranged between described first substrate and the described power line, and overlapping with described power line under the situation of overlooking.

The electro-optical device that should be suitable for example has a plurality of control lines, a plurality of holding wire, capacity cell and switch element.The corresponding setting of capacity cell with each pixel.Capacity cell keeps the current potential of transistorized grid.Switch element is arranged between the holding wire and each capacity cell among a plurality of holding wires.The control signal that switch element is supplied with by a control line among a plurality of control lines is controlled.In this electro-optical device, owing to capacity cell is arranged between first substrate and the power line, and overlapping with power line under the situation of overlooking, so can easily dwindle the zone of each pixel.Thus, can improve picture element density, can realize that the height in the directive property demonstration becomes more meticulous.

(being suitable for example 7) above-mentioned electro-optical device is characterized in that: described transistor and described switch element are arranged at the position that the described power line of clamping stands facing each other on the second direction of intersecting with described first direction under the situation of overlooking.

In this suitable example,, be arranged at the position of the second direction clamping power line face-off that under the situation of overlooking, intersects, so can easily between transistor and switch element, capacity cell be set with first direction owing to transistor and switch element.

(being suitable for example 8) above-mentioned electro-optical device, it is characterized in that: described transistor and described switch element, be separately positioned between described first substrate and the described power line, described transistor has first semiconductor layer that is provided with channel region and source region and drain region, described switch element has second semiconductor layer that is provided with channel region and source region and drain region, in described first semiconductor layer, arrange at described first direction described channel region and described source region and described drain region, in described second semiconductor layer, arrange at described first direction described channel region and described source region and described drain region.

In this suitable example, transistor and switch element are separately positioned between first substrate and the power line.In addition, transistor has first semiconductor layer, and switch element has second semiconductor layer.First semiconductor layer and second semiconductor layer, arrange at first direction respectively channel region and source region and drain region.Therefore, can easily enlarge zone between transistor and the switch element.Thus, can more easily between transistor and switch element, capacity cell be set.

(being suitable for example 9) above-mentioned electro-optical device, it is characterized in that: described transistor has island electrode overlapping with the described channel region of described first semiconductor layer under the situation of overlooking, among described first semiconductor layer and the described island electrode at least one, a part constitutes at least a portion of described capacity cell.

In this suitable example, transistor has the island electrode.The island electrode is overlapping with the channel region of first semiconductor layer under the situation of overlooking.And, at least one among first semiconductor layer and the island electrode, a part constitutes at least a portion of capacity cell.Therefore, can make among first semiconductor layer and the island electrode at least one constitute at least a portion of capacity cell.

(being suitable for example 10) electro-optical device, it is characterized in that: described island electrode and described first semiconductor layer have the length that strides across described power line under the situation of overlooking in described second direction, and the outside of described drain region described power line under the situation of overlooking of described island electrode and described second semiconductor layer is electrically connected.

In this suitable example, the island electrode and first semiconductor layer have the length that strides across power line under the situation of overlooking in second direction.And outside at power line under the situation of overlooking, the drain region of the island electrode and second semiconductor layer is electrically connected.Thus, can use power line and island electrode and first semiconductor layer to constitute capacity cell.

(being suitable for example 11) above-mentioned electro-optical device, it is characterized in that: the described drain region of described first semiconductor layer is arranged on the outside of described power line under the situation of overlooking, and the outside of the described drain region of described first semiconductor layer and described first electrode described power line under the situation of overlooking is electrically connected.

In this suitable example, the drain region of first semiconductor layer is arranged on the outside of power line under the situation of overlooking.And the drain region of first semiconductor layer and first electrode outside at power line under the situation of overlooking is electrically connected.Therefore, can be under the situation that not hindered by power line, with the drain region and the electrical connection of first electrode of first semiconductor layer.

(be suitable for example 12) above-mentioned electro-optical device is characterized in that: in the adjacent described pixel of described first direction each other, the described drain region of described first semiconductor layer is located at each other and clips the mutual opposition side of described power line under the situation of overlooking.

In this suitable example, in the first direction adjacent pixels each other, the drain region of first semiconductor layer is located at each other and clips the mutual opposition side of power line under the situation of overlooking.Therefore, in the first direction adjacent pixels each other, the drain region that can easily make first semiconductor layer away from each other.As a result, can not hinder mutually each other, can easily connect the drain region and first electrode of first semiconductor layer in the first direction adjacent pixels.

(being suitable for example 13) above-mentioned electro-optical device, it is characterized in that: described at least first pixel is adjacent at described first direction with described second pixel, each described control line extends at described first direction, and at least with each corresponding setting of described first pixel and described second pixel, each described holding wire extends in described second direction, and at least with each corresponding setting of described first pixel and described second pixel.

In this suitable example, at least the first pixel is adjacent at first direction with second pixel.Each control line extends at first direction, and at least with each corresponding setting of first pixel and second pixel.Each holding wire extends in second direction, and at least with each corresponding setting of first pixel and second pixel.

In this electro-optical device, each control line and each holding wire at least with each corresponding setting of first pixel and second pixel.Therefore, can between adjacent first pixel of first direction and second pixel, control transistor in first pixel and the transistor in second pixel respectively.

(being suitable for example 14) above-mentioned electro-optical device, it is characterized in that: between described first direction adjacent described first pixel and described second pixel, the described transistor of described first pixel is adjacent at described first direction with the described switch element of described second pixel, described first pixel and described second pixel are also adjacent in described second direction, between described second direction adjacent described first pixel and described second pixel, the described transistor of described first pixel and the described switch element of described second pixel, it is adjacent in described second direction to clip a described control line at least.

In this suitable example, between first direction adjacent first pixel and second pixel, the switch element of the transistor of first pixel and second pixel is adjacent at first direction.In addition, first pixel and second pixel are also adjacent in second direction.And, between second direction adjacent first pixel and second pixel, the switch element of the transistor of first pixel and second pixel, it is adjacent in second direction to clip at least one control line.Thus, can easily make by the switch element of the transistor of first pixel and second pixel control line in the second direction clamping, be common to be positioned at clip this control line and mutually first pixel of opposition side each other or second pixel each other.

(being suitable for example 15) above-mentioned electro-optical device, it is characterized in that: in described first direction adjacent described first pixel and described second pixel, described transistor in described first pixel and described switch element, and described transistor in described second pixel and described switch element, under the situation of overlooking the described holding wire corresponding with described first pixel and with the corresponding described holding wire of described second pixel between.

In this suitable example, in first direction adjacent first pixel and second pixel, transistor in first pixel and switch element, and second transistor and the switch element in the pixel, under the situation of overlooking and the first pixel signal lines and and the second pixel signal lines between.Therefore, can easily shorten at adjacent first pixel of first direction and the interval of second pixel.

(being suitable for example 16) above-mentioned electro-optical device, it is characterized in that: described a plurality of pixels are divided into many group pixel groups, described many group pixel groups are one group of pixel group with a plurality of described pixel that is included in adjacent described first pixel of described first direction and described second pixel at least, the described pixel group of many groups is arranged at described first direction, described a plurality of holding wire is arranged between described first substrate and the described power line, and have the length that strides across described power line in described second direction, described power line strides across at the adjacent described pixel group of described first direction each other.

In this suitable example, a plurality of pixels are divided into many group pixel groups.In one group of pixel group, contain a plurality of pixels that are included in the first adjacent pixel of first direction and second pixel at least.Many group pixel groups are arranged at first direction.A plurality of holding wires are arranged between first substrate and the power line.A plurality of holding wires have the length that strides across power line in second direction.And power line strides across first direction adjacent pixels group each other.

In this electro-optical device, because how the group pixel group is arranged at first direction, so each other the adjacent pixels group, at least two adjacent arrangements of holding wire.At this, in two adjacent structure arranged of holding wire, exist in the situation that two holding wires produce parasitic capacitance each other.Yet, in this suitable example,, between each of power line and two holding wires, be easy to form electric capacity because power line strides across two holding wires each other.Therefore, can easily reduce two data lines electricity each other interferes.

(being suitable for example 17) above-mentioned electro-optical device, it is characterized in that: the connecting portion that is electrically connected described first semiconductor layer and described power line is in the zone that is arranged under the situation of overlooking between described holding wire and the described island electrode.

In this suitable example, because the connecting portion that is electrically connected first semiconductor layer and power line is in the zone that is arranged under the situation of overlooking between holding wire and the island electrode, so the electricity that can reduce between capacity cell and the holding wire is interfered.

(being suitable for example 18) above-mentioned electro-optical device is characterized in that, comprising: second connecting portion, and it is electrically connected the described drain region and described first electrode of described first semiconductor layer; With second light shield layer, it is separated at least between described first direction adjacent described first pixel and described second pixel, described second light shield layer is arranged between described first electrode and the described light shield layer, and is overlapped in described second connecting portion corresponding with described first pixel and described second connecting portion corresponding with described second pixel under the situation of overlooking.

The electro-optical device that should be suitable for example has second connecting portion and second light shield layer.Second connecting portion is electrically connected the drain region and first electrode of first semiconductor layer.Second light shield layer is arranged between first electrode and the light shield layer, and it is separated at least between first direction adjacent first pixel and second pixel.And pairing second connecting portion of second light shield layer and first pixel and pairing second connecting portion of second pixel are overlapping under the situation of overlooking.Therefore, under the situation of overlooking, can easily hide second connecting portion.

(being suitable for example 19) above-mentioned electro-optical device, it is characterized in that: have auxiliary wiring, described auxiliary wiring is configured between described second electrode and the described light shield layer, and with described second electrode conduction, described auxiliary wiring is overlapping with described second light shield layer under the situation of overlooking.

This electro-optical device that is suitable for example has the auxiliary wiring with second electrode conduction.Auxiliary wiring is arranged between second electrode and the light shield layer.And auxiliary wiring is overlapping with second light shield layer under the situation of overlooking.Therefore, auxiliary wiring is difficult to stop up pixel.

(being suitable for example 20) a kind of electronic equipment is characterized in that: have above-mentioned electro-optical device as display part.

Should be suitable for electronic equipment of example, have first substrate, second substrate, luminescent layer and light shield layer as the electro-optical device of display part.Second substrate is relative with first substrate.Luminescent layer is arranged between first substrate and second substrate, and control is luminous in each pixel of a plurality of pixels.A plurality of pixels comprise first pixel that forms first image and second pixel that forms second image at least.Light shield layer is arranged between second substrate and the luminescent layer.On light shield layer, be provided with peristome.Peristome is by arriving the light of first scope from the luminescent layer of first pixel via second substrate, and by arrive the light of second scope via second substrate from the luminescent layer of second pixel.

Thus, can carry out visual confirmation to first image that forms by first pixel, can carry out visual confirmation to second image that forms by second pixel from second scope from first scope.Therefore, in this electro-optical device, can carry out directive property at both direction at least and show.

At this, light shield layer is arranged between second substrate and the luminescent layer.That is, light shield layer is between first substrate and second substrate.Therefore, be configured in first substrate with light shield layer and compare, can shorten the distance between a plurality of pixels and the light shield layer with the situation in the outside of second substrate.Thereby, in this electro-optical device, can easily enlarge the effective range of all directions of carrying out the directive property demonstration.And, since should be suitable for electronic equipment of example possess can enlarge effective range electro-optical device as display part, so can realize the expansion of effective range.

Description of drawings

Fig. 1 is the plane graph of the display unit in the expression present embodiment.

Fig. 2 is the sectional view of the A-A line among Fig. 1.

Fig. 3 is the plane graph of the part of a plurality of pixels in the expression present embodiment.

Fig. 4 is the plane graph of the part of a plurality of pixels in the expression present embodiment.

Fig. 5 is the plane graph of the arrangement of the many groups pixel group in the explanation present embodiment.

Fig. 6 is the figure of the circuit structure of the display unit in the expression present embodiment.

Fig. 7 is the sectional view of the C-C line among Fig. 4.

Fig. 8 be expression in the present embodiment first semiconductor layer and the plane graph of second semiconductor layer.

Fig. 9 is the plane graph of first semiconductor layer, second semiconductor layer, island electrode, scan line and data wire in the expression present embodiment.

Figure 10 is the plane graph of island electrode, scan line and data wire in the expression present embodiment.

Figure 11 is the plane graph of the contact hole in the expression present embodiment.

Figure 12 is the plane graph of selection transistor, driving transistors, scan line, data wire, power line, drain electrode and repeater electrode in the expression present embodiment.

Figure 13 is the sectional view of the E-E line among Figure 12.

Figure 14 is the enlarged drawing of the F portion among Fig. 7.

Figure 15 is the plane graph of the pixel electrode in the expression present embodiment.

Figure 16 is the plane graph of the part in the cofferdam (bank) in the expression present embodiment.

Figure 17 be expression in the present embodiment photomask and the plane graph of pixel group.

Figure 18 is the time diagram of the control signal that supplies to each scan line in the present embodiment.

Figure 19 schematically shows the many groups pixel group in the present embodiment and the sectional view of photomask.

Figure 20 is the exploded perspective view of primary structure of another example of the display unit of expression in the present embodiment.

Figure 21 is the exploded perspective view of the primary structure of an example again of the display unit in the expression present embodiment.

Figure 22 is the plane graph of another example of the arrangement of the many group pixel group of expression in the present embodiment.

Figure 23 is the plane graph of another example of the photomask in the expression present embodiment.

Figure 24 is the figure of circuit structure of another example of the display unit of expression in the present embodiment.

Figure 25 is the sectional view of an example again of the display unit in the expression present embodiment.

Figure 26 is a stereogram of using the electronic equipment of the display unit in the present embodiment.

Figure 27 is the sectional view of explanation prior art.

Figure 28 is the sectional view of explanation prior art.

Symbol description

1,10,100-display unit, 3-display surface, 5,5r, 5g, 5b-pixel, 5 ₁-the first pixel, 5 ₂-the second pixel, 7-viewing area, 11,20-device substrate, 13-hermetic sealing substrate, 25-pixel group, 27-selection transistor, 29-driving transistors, 31-capacity cell, 33-pixel electrode, 35-organic layer, 37-common electrode, 39-auxiliary wiring, 41-the first substrate, 51-the first semiconductor layer, 51a-source electrode, 51b-channel region, 51c-drain region, 51d-electrode part, 53-the second semiconductor layer, 53a-source region, 53b-channel region, 53c-drain region, 55-island electrode, 55a-gate electrode portion, 55b-electrode part, 57-gate electrode portion, 59-drain electrode, 65-source electrode part, 67-connecting portion, 69-connecting portion, 71-cofferdam, 71a-cofferdam, 71b-cofferdam, 77-luminescent layer, 81-the second substrate, 83-photomask, 85-peristome, 87,87r, 87g, 87b-chromatic filter, 93-resin bed, 95a, 95b-prism portion, 97-bonding agent, 113-the first scope, 115-the second scope, 117-scope, 119a, 119b-effective range, 131-the first electrode, 133-the second electrode, 141-lens section, 500-electronic equipment, 510-display part, CH1～CH8-contact hole, M-matrix, GT ₁, GT ₂-scan line, SI, SI ₁, SI ₂-data wire, PW-power line.

Embodiment

Is example to utilize organic El device as the display unit of electro-optical device, with reference to accompanying drawing execution mode is described.

As shown in Figure 1, the display unit in the execution mode 1 has display surface 3.

At this, in display unit 1, be set with a plurality of pixels 5.A plurality of pixels 5 in the drawings directions X and Y direction in viewing area 7 arranged, and constitutes directions X is made as line direction, the Y direction is made as the matrix M of column direction.In display unit 1, a plurality of pixels 5 constitute the matrix M of m (m is the integer more than 1) row and 2 * n (n is the integer more than 1) row.Display unit 1, by optionally outside display unit 1, penetrating light via display surface 3 from a plurality of pixels 5, can be at display surface 3 display images.In addition, viewing area 7 be can display image the zone.In Fig. 1, for the easy to understand structure, exaggerative pixel 5.

Shown in Figure 2 as the sectional view in the A-A line among Fig. 1, display unit 1 has pixel substrate 11 and hermetic sealing substrate 13.

On pixel substrate 11, be hermetic sealing substrate 13 sides in display surface 3 sides, corresponding with a plurality of pixel 5 respectively, be provided with switch element described later etc.

With the state relative hermetic sealing substrate 13 is being set than device substrate 11 more close display surface 3 sides with device substrate 11.On hermetic sealing substrate 13, with display unit 1 in the suitable face in the back side of display surface 3 be bottom surface 15 sides, just device substrate 11 sides are provided with photomask described later etc.

Between device substrate 11 and hermetic sealing substrate 13, by sealing at the seal 17 that surrounds viewing area 7 than the more close inboard place of the periphery of display unit 1.

At this, as shown in Figure 3, a plurality of pixels 5 of in display unit 1, setting, the color of the light that penetrates from display surface 3 be set to respectively red system (R), green system (G) and blue be (B) one.That is, a plurality of pixels 5 of formation matrix M comprise pixel 5r, pixel 5g that penetrates G light that penetrates R light and the pixel 5b that penetrates B light.

At this, the R look is not limited to pure red form and aspect, comprises orange etc.The G look is not limited to pure green form and aspect, comprises blue-green, yellow green.The B look is not limited to the form and aspect of pure indigo plant, comprises bluish violet, blue-green etc.From other viewpoint, it is the peak value of optical wavelength is positioned at the scope more than the 570nm in the visible region light that the light that is the R look is defined as.In addition, the light that is the G look peak value that is defined as optical wavelength is positioned at the light of the scope of 500nm～565nm.The peak value that the light that is the B look is defined as optical wavelength is positioned at the light of the scope of 415nm～495nm.

In matrix M, a plurality of pixels 5 of arranging along the Y direction constitute a pixel column 21.In addition, a plurality of pixels 5 of arranging along directions X constitute a pixel column 23.The color of the light of each pixel 5 in pixel column 21 is set among R, G and the B.That is, matrix M have the assortment of Y direction have a plurality of pixel 5r pixel column 21r, in the assortment of Y direction the pixel column 21g of a plurality of pixel 5g is arranged, the pixel column 21b of a plurality of pixel 5b is arranged in the assortment of Y direction.And in display unit 1, pixel column 21r, pixel column 21g and pixel column 21b arrange along directions X repeatedly by these order two row two row ground respectively.

In addition, in display unit 1, constitute a plurality of pixels 5 of matrix M, as shown in Figure 4, be divided into a plurality of first pixels 5 ₁With a plurality of second pixels 5 ₂ Display unit 1 is passed through from a plurality of first pixels 5 ₁Optionally outside display unit 1, penetrate light, can in display surface 3, show first image via display surface 3.In addition, display unit 1 is passed through from a plurality of second pixels 5 ₂Optionally outside display unit 1, penetrate light, can in display surface 3, show second image via display surface 3.

In addition, no matter first image and second image are mutually different images, all it doesn't matter for still mutual identical image.In addition, suitably use the mark of Fig. 5, the mark of pixel 5r, 5g and 5b, first pixel 5 respectively below ₁With second pixel 5 ₂Mark.In addition, for first pixel 5 ₁With second pixel 5 ₂Each discern under the situation of R, G and B, use the first pixel 5r ₁, 5g ₁And 5b ₁Mark, and the second pixel 5r ₂, 5g ₂And 5b ₂Mark.

In display unit 1, first pixel 5 ₁With second pixel 5 ₂Alternately arrange at directions X.A pixel column 21 is by a plurality of first pixels 5 ₁Or a plurality of second pixels 5 ₂Constitute.That is, matrix M has along the Y direction and is arranged with a plurality of first pixels 5 ₁ Pixel column 21 ₁, and be arranged with a plurality of second pixels 5 along the Y direction ₂Pixel column 21 ₂In addition, suitably use the mark of pixel column 21, the mark of pixel column 21r, pixel column 21g and pixel column 21b, pixel column 21 respectively below ₁With pixel column 21 ₂Mark.In addition, for pixel column 21 ₁With pixel column 21 ₂The situation of each identification R, G and B under, use pixel column 21r ₁, 21g ₁And 21b ₁Mark, and pixel column 21r ₂, 21g ₂And 21b ₂Mark.

In display unit 1, constitute a plurality of pixels 5 of matrix M, be divided into in the first adjacent pixel 5 of directions X ₁With second pixel 5 ₂Two pixels 5 be many groups pixel group 25 of one group.First pixel 5 in each pixel group 25 ₁With second pixel 5 ₂Put in order unified between many group pixel groups 25.In display unit 1, see Fig. 4 as can be known, first pixel 5 ₁With second pixel 5 ₂Press this sequence arrangement to the right from the left side at directions X.In addition, if first pixel 5 ₁With second pixel 5 ₂Put in order unified between many group pixel groups 25, then which which can on the right side on a left side.

In addition, in display unit 1, constitute first pixel 5 of each pixel group 25 ₁With second pixel 5 ₂The color of ejaculation light be set among R, G and the B one.That is the first pixel 5r, ₁With the second pixel 5r ₂Constitute one group of pixel group, 25, the first pixel 5g ₁With the second pixel 5g ₂Constitute one group of pixel group, 25, the first pixel 5b ₁With the second pixel 5b ₂Constitute one group of pixel group 25.In addition, below under situation for each identification R, G and the B of many groups pixel group 25, use the mark of pixel group 25r, pixel group 25g and pixel group 25b.

In matrix M, as shown in Figure 5, organize pixel group 25 more and arrange in all directions of directions X and Y direction.That is, organize pixel group 25 is arranged in rectangular more.

In addition, in display unit 1, as mentioned above, a plurality of pixels 5 constitute the matrix M that m is capable and 2 * n is listed as.Therefore, organize pixel group 25 more and constitute the matrix M that m is capable and n is listed as.

Display unit 1, shown in Figure 6 as the figure of indication circuit structure in each pixel 5, has the transistor 27 of selection, driving transistors 29, capacity cell 31, pixel electrode 33, organic layer 35 and common electrode 37.Select transistor 27 and driving transistors 29 to constitute by TFT (Thin FilmTransistor) element respectively, have function as switch element.In addition, in display unit 1,, adopt the TFT element of P channel-types as driving transistors 29 as the TFT element of selecting transistor 27 employing N channel-types.

In addition, display unit 1 has m root scan line GT ₁, m root scan line GT ₂, n data lines SI ₁, n data lines SI ₂With m root power line PW.

In addition, discerning m root scan line GT respectively below ₁Situation under, use scan line GT ₁(h) this mark (h is the integer of 1～m).Similarly, discerning m root scan line GT respectively ₂Under the situation of m root power line PW, use scan line GT ₂(h) this mark and this mark of power line PW (h).

In addition, discerning n data lines SI respectively ₁, n data lines SI ₂Situation under, use data wire SI ₁(j) this mark and data wire SI ₂(j) this mark (j is the integer of 1～n).

M root scan line GT ₁With scan line GT ₂Be spaced from each other under the state at interval in the Y direction, extend along directions X.N data lines SI ₁With n data lines SI ₂Be spaced from each other under the state at interval at directions X, extend along the Y direction.M root scan line GT ₁With n data lines SI ₁By the clathrate wiring.Each first pixel 5 ₁With each scan line GT ₁With each data wire SI ₁Corresponding setting of intersection.

Similarly, m root scan line GT ₂With n data lines SI ₂By the clathrate wiring.Each second pixel 5 ₂With each scan line GT ₂With each data wire SI ₂Corresponding setting of intersection.

Each scan line GT ₁With each scan line GT ₂Corresponding with each pixel column 23 (Fig. 3).In each pixel column 23, as shown in Figure 6, scan line GT ₁With n first pixel 5 ₁Corresponding.In addition, in pixel column 23, scan line GT ₂With n second pixel 5 ₂Corresponding.

Each data wire SI ₁With each data wire SI ₂Corresponding with each pixel column 21 (Fig. 3).In each pixel column 21, as shown in Figure 6, data wire SI ₁With m first pixel 5 ₁I.e. pixel column 21 ₁(Fig. 4) correspondence.In addition, in each pixel column 21, data wire SI ₂With m second pixel 5 ₂I.e. pixel column 21 ₂(Fig. 4) correspondence.

As shown in Figure 6, m root power line PW is spaced from each other under the state at interval in the Y direction, extends along directions X.Each power line PW is corresponding with each pixel column 23 (Fig. 3).

The gate electrode of respectively selecting transistor 27 shown in Figure 6 and each corresponding scan line GT ₁And GT ₂Be electrically connected.Each selects the source electrode of transistor 27 and each corresponding data wire SI ₁And SI ₂Be electrically connected.The drain electrode of selection transistor 27 is electrically connected with the gate electrode of corresponding driving transistors 29 and an electrode of capacity cell 31.

Another electrode of capacity cell 31 and the source electrode of driving transistors 29 are electrically connected with corresponding each power line PW respectively.

The drain electrode of each driving transistors 29 is electrically connected with each pixel electrode 33.Each pixel electrode 33 and common electrode 37 constitutes with pixel electrode 33 and is anode, is the pair of electrodes of negative electrode with common electrode 37.

At this, common electrode 37 is being provided with under the continuum of states between a plurality of pixels 5 that stride across the formation matrix M, strides across between a plurality of pixels 5 to concur.

Organic layer 35 between each pixel electrode 33 and common electrode 37 is made of organic material, has the structure that has comprised luminescent layer.

Select transistor 27, when to the scan line GT that is connected with this selection transistor 27 ₁And GT ₂When supplying with sweep signal, be in the ON state.At this moment, the data wire SI from being connected with this selection transistor 27 ₁And SI ₂Supply with data-signal, driving transistors 29 is in the ON state.During in capacity cell 31, keeping necessarily by current potential, during the grid potential maintenance necessarily with driving transistors 29 with data-signal.Thus, during the ON state maintenance necessarily with driving transistors 29.

When keeping the ON state of driving transistors 29, the electric current corresponding with the grid potential of driving transistors 29 flows to common electrode 37 via pixel electrode 33 and organic layer 35 from power line PW.Then, be included in the luminescent layer in the organic layer, luminous with the brightness corresponding with current amount flowing in organic layer 35.Display unit 1 is that the luminescent layer that comprises in organic layer 35 is luminous, of top light emitting (Top Emission) the type organic El device that penetrates from display surface 3 by hermetic sealing substrate 13 from the light of luminescent layer.

At this, the structure separately of device substrate 11 and hermetic sealing substrate 13 is elaborated.

Shown in Figure 7 as the sectional view of the C-C line among Fig. 4, device substrate 11 has first substrate 41.

First substrate 41 is made of the material with light transmission of for example glass, quartz etc., its have towards first 42a of display surface 3 sides and towards the bottom surface second 42b of 15 sides.

On first 42a of first substrate 41, be provided with gate insulating film 43.Display surface 3 sides at gate insulating film 43 are provided with dielectric film 45.Display surface 3 sides at dielectric film 45 are provided with dielectric film 47.Display surface 3 sides at dielectric film 47 are provided with dielectric film 49.

In addition, on first 42a of first substrate 41, be provided with first semiconductor layer 51 corresponding and second semiconductor layer 53 corresponding with the selection transistor 27 of each pixel 5 with the driving transistors 29 of each pixel 5.

Shown in Figure 8 as plane graph, first semiconductor layer 51 and second semiconductor layer 53 respectively with each pixel 5 corresponding setting.In addition, the cross section of cross section shown in Figure 7 and the D-D line among Fig. 8 is suitable.

First semiconductor layer 51 and second semiconductor layer 53 are adjacent in the Y direction under the state of Y direction devices spaced apart.

First semiconductor layer 51 has source region 51a, channel region 51b, drain region 51c and electrode part 51d.Source region 51a, channel region 51b and drain region 51c arrange at directions X.Electrode part 51d and channel region 51b and drain region 51c are adjacent in the Y direction under the state of Y direction devices spaced apart.In addition, electrode part 51d is adjacent at directions X under the state that is connected with source region 51a.

Second semiconductor layer 53 has source region 53a, channel region 53b and drain region 53c.Source region 53a, channel region 53b and drain region 53c arrange at directions X.

First pixel 5 in each pixel group 25 ₁With second pixel 5 ₂Between, first semiconductor layer 51 each other and second semiconductor layer 53 each other the profile under the situation of overlooking have rotational symmetric relation.

As shown in Figure 7, first semiconductor layer 51 and second semiconductor layer 53 cover from display surface 3 sides by gate insulating film 43.In addition, the material as gate insulating film 43 can adopt for example material of silica etc.

Shown in Figure 9 as plane graph is provided with the island electrode 55 overlapping with first semiconductor layer, scan line GT in display surface 3 sides of gate insulating film 43 ₁And GT ₂, data wire SI ₁And SI ₂

Shown in Figure 10 as plane graph, island electrode 55 has the 55a of gate electrode portion, electrode part 55b.The 55a of gate electrode portion is adjacent in the Y direction under the state that is connected with electrode part 55b.

The channel region 51b of the 55a of gate electrode portion and first semiconductor layer 51 shown in Figure 8 is overlapping.The electrode part 51d of the electrode part 55b and first semiconductor layer 51 is overlapping.Electrode part 51d and electrode part 55b constitute the part of capacity cell 31.

At each scan line GT ₁And GT ₂On, by each corresponding pixel 5, be respectively equipped with towards two gate electrode portions 57 of each pixel 5 in Y direction branch.Each gate electrode portion 57 is overlapping with the channel region 53b of second semiconductor layer 53 shown in Figure 8.

The island electrode 55 corresponding with each pixel 5 and with this pixel 5 corresponding data line SI ₁(SI ₂), adjacent at directions X.In display unit 1, by respectively with pixel group 25 in first pixel 5 ₁With second pixel 5 ₂Corresponding data line SI ₁With data wire SI ₂ Two island electrodes 55 in each pixel group 25 of directions X clamping.

In addition, by respectively with pixel group 25 in first pixel 5 ₁With second pixel 5 ₂Corresponding scanning line GT ₁With scan line GT ₂ Two island electrodes 55 in each pixel group 25 of Y direction clamping.

As island electrode 55, scan line GT ₁And GT ₂, and data wire SI ₁And SI ₂Material, for example can adopt metals such as aluminium, copper, molybdenum, tungsten, chromium, or comprise their alloy etc.As shown in Figure 7, the 55a of gate electrode portion (island electrode 55), (the scan line GT of gate electrode portion 57 ₁With scan line GT ₂) and data wire SI ₁And SI ₂Cover from display surface 3 sides by dielectric film 45.

Shown in Figure 11 as plane graph, on dielectric film 45 with each pixel 5 corresponding contact hole CH1, CH2, CH3, CH4, CH5, CH6 and CH7 of being provided with.

Each contact hole CH1 and each data wire SI ₁And SI ₂Correspondence is arranged on and each data wire SI ₁And SI ₂Overlapping position.Each contact hole CH1 is arranged on the position in the directions X face-off with the source region 53a of second semiconductor layer 53.Each contact hole CH1 arrives each corresponding data wire SI ₁And SI ₂

Each contact hole CH2 is corresponding with each source region 53a, is arranged on the position overlapping with each source region 53a.Each contact hole CH2 is arranged on the position in the directions X face-off with each contact hole CH1.Each contact hole CH2 arrives the source region 53a of second semiconductor layer 53.

Each contact hole CH3 is corresponding with each drain region 53c, is arranged on the position overlapping with each drain region 53c.Each contact hole CH3 arrives the source region 53c of second semiconductor layer 53.

Each contact hole CH4 is corresponding with each electrode part 55b, is arranged on the position overlapping with each electrode part 55b.Each contact hole CH4 is arranged on the position in the face-off of Y direction with each contact hole CH3.Each contact hole CH4 arrives each electrode part 55b.

Contact hole CH5 is corresponding with each drain region 51c of each first semiconductor layer 51, with the overlapping position of each drain region 51c on respectively be provided with two.Each contact hole CH5 arrives the drain region 51c of first semiconductor layer 51.

Each contact hole CH6 and each data wire SI ₁And SI ₂Correspondence is arranged on and each data wire SI ₁And SI ₂Overlapping position.Each contact hole CH6 be arranged at directions X clamping source region 51a and with the position of the 55a of gate electrode portion face-off.Each contact hole CH6 arrives each corresponding data wire SI ₁And SI ₂

Contact hole CH7 is corresponding with each source region 51a, with the overlapping position of each source region 51a on respectively be provided with two.Under the situation of overlooking, each contact hole CH7 is arranged at each data wire SI corresponding with each pixel 5 ₁And SI ₂And between the electrode part 55b of island electrode 55, with the position of electrode part 55b in the directions X face-off.Each contact hole CH7 arrives the source region 51a of first semiconductor layer 51.

Shown in Figure 12 as plane graph, display surface 3 sides at the dielectric film 45 that is provided with contact hole CH1～CH7 are provided with power line PW, drain electrode 59, repeater electrode 62, repeater electrode 63.

Each power line PW is provided with spreading all under directions X strides across the length continuum of states of each pixel column 23 (Fig. 3).As shown in figure 12, the width dimensions of the Y direction of each power line PW is set to the length that strides across two contact hole CH7 that arrange in the Y direction.Each power line PW covers a plurality of contact hole CH7 in each pixel column 23.

In each pixel 5, power line PW is selecting between transistor 27 and the driving transistors 29 under the situation of overlooking.In other words, select transistor 27 and driving transistors 29 clamping power line PW to stand facing each other in the Y direction.In addition, select source region 53a, the channel region 53b (Fig. 8) of transistor 27 and drain region 53c is positioned at power line PW under the situation of overlooking the outside.The part of the source region 51a of driving transistors 29, channel region 51b (Fig. 8) and drain region 51c are positioned at the outside of power line PW under the situation of overlooking.

In addition, first pixel 5 in one group pixel group 25 ₁With second pixel 5 ₂Between, as shown in figure 12, select transistor 27 adjacent at directions X for one with another driving transistors 29.First pixel 5 in one group pixel group 25 ₁With second pixel 5 ₂Between, select transistor 27 to be located at the mutual opposition side of Y direction clamping power line PW each other.Similarly, first pixel 5 in one group pixel group 25 ₁With second pixel 5 ₂Between, driving transistors 29 is located at the mutual opposition side of Y direction clamping power line PW each other.

Shown in Figure 13 as the sectional view of the E-E line among Figure 12, each power line PW arrives the source region 51a of first semiconductor layer 51 by contact hole CH7.In addition, in display unit 1, by the position that contact hole CH7 arrives source region 51a, be known as source electrode part 65 from each power line PW.

As mentioned above, each contact hole CH7 is set at each data wire SI corresponding with each pixel 5 under the situation of overlooking ₁And SI ₂And between the electrode part 55b of island electrode 55.Therefore, each source electrode 65 is positioned at each data wire SI corresponding with each pixel 5 under the situation of overlooking ₁And SI ₂And between the electrode part 55b of island electrode 55.

At this, under the situation of overlooking, be formed with capacity cell 31 at the electrode part 55b of power line PW and island electrode 55 and the electrode part 51d overlapping areas of first semiconductor layer 51.Therefore, capacity cell 31 can be regarded as and is arranged between first substrate 41 and the power line PW.Electrode part 55b, electrode part 51d and power line PW constitute the part of capacity cell 31.

As shown in figure 12, drain electrode 59 and each pixel 5 corresponding setting cover contact hole CH5.Shown in Figure 14 as the enlarged drawing of the F portion among Fig. 7, each drain electrode 59 arrives the drain region 51c of first semiconductor layer 51 by contact hole CH5.In display unit 1, be known as connecting portion 67 by the position that contact hole CH5 arrives drain region 51c from drain electrode 59.

As shown in figure 12, repeater electrode 61 and each pixel 5 corresponding setting.Each repeater electrode 61 between two adjacent pixels 5 of Y direction, strides across contact hole CH1 corresponding with a pixel 5 and the contact hole CH6 corresponding with one other pixel 5.In addition, in each pixel 5, each repeater electrode 61 strides across between contact hole CH1 and the contact hole CH2.

Each repeater electrode 61 cover with corresponding contact hole CH1 in two adjacent pixels 5 of Y direction and CH2 and with two pixels 5 in another corresponding contact hole CH6.Thus, at two adjacent data wire SI of Y direction ₁Be electrically connected by repeater electrode 61 each other.In addition, at two adjacent data wire SI of Y direction ₂Also be electrically connected each other by repeater electrode 61.

And then, data wire SI ₁Be electrically connected by repeater electrode 61 with the source region 53a of second semiconductor layer 53 corresponding with it.In addition, data wire SI ₂Be electrically connected by repeater electrode 61 with the source region 53a of second semiconductor layer 53 corresponding with it.

Repeater electrode 63 and each pixel 5 corresponding setting stride across between the contact hole CH3 and contact hole CH4 corresponding with each pixel 5.Each repeater electrode 63 than the more close outside of the profile of power line PW, covers these contact holes CH3 and contact hole CH4.Thus, in each pixel 5, the drain region 53c of second semiconductor layer 53 and the electrode part 55b of island electrode 55 than the more close outside of the profile of power line PW, are electrically connected by repeater electrode 63.

Material as power line PW, drain electrode 59, repeater electrode 61 and repeater electrode 63 for example can adopt metals such as aluminium, copper, molybdenum, tungsten, chromium, or comprises their alloy etc.As shown in Figure 7, drain electrode 59, repeater electrode 61 and repeater electrode 63 cover from display surface 3 sides by dielectric film 47.In addition, power line PW also covers from display surface 3 sides by dielectric film 47.

Dielectric film 47 covers from display surface 3 sides by dielectric film 49.

On dielectric film 47 and dielectric film 49, be provided with contact hole CH8.

As shown in figure 12, each contact hole CH8 and each pixel 5 corresponding setting.Each contact hole CH8 is arranged on and drain electrode 59 overlapping areas, arrives drain electrode 59.

In addition, each drain electrode 59 extends to an opposite side with the 55a of gate electrode portion at directions X.And each contact hole CH8 is overlapping with the position of the prolongation of drain electrode 59 under the situation of overlooking.Thus, contact hole CH5 and contact hole CH8 are not overlapping under the situation of overlooking.At this, contact hole CH5 and contact hole CH8 also can be overlapping.

In display surface 3 sides of the dielectric film 49 that is provided with contact hole CH8, as shown in Figure 7, each pixel 5 is provided with pixel electrode 33.

Shown in Figure 15 as plane graph, each pixel electrode 33 strides across scan line GT in the Y direction ₁With scan line GT ₂, directions X stride across contact hole CH8 and with each pixel 5 corresponding data line SI ₁Or data wire SI ₂Each pixel electrode 33 covers contact hole CH8.

In addition, in display unit 1, as shown in figure 14, be known as connecting portion 69 by the position that contact hole CH8 arrives drain electrode 59 from each pixel electrode 33.

As the material of pixel electrode 33, can adopt silver, aluminium, copper etc. to have the metal of light reflective or comprise their alloy etc.Under the situation that pixel electrode 33 is worked as anode, the preferred work function of silver, platinum etc. of using is than higher material.In addition, also can use ITO (Indium Tin Oxide) or indium-zinc oxide (Indium Zinc Oxide) etc., adopt the structure that between the pixel electrode 33 and first substrate 41, is provided with parts with light reflective as pixel electrode 33.

In addition, for example can adopt the material of silica, silicon nitride, acrylic resin etc. as the material of dielectric film 47 and 49.

As shown in Figure 7, in adjacent pixel electrodes 33 each other, the cofferdam 71 of dividing the effective coverage of each pixel 5 strides across zone 72 and is provided with.Cofferdam 71 arrives dielectric film 49 each other in adjacent pixel electrodes 33.Cofferdam 71 for example is made of resins such as the acrylic resin of high material such as the light absorption with carbon black or chromium etc. or polyimides, and shown in Figure 16 as plane graph is arranged to clathrate.

Cofferdam 71 strides across viewing area 7 and is provided with.Therefore, viewing area 7 is divided into the effective coverage of a plurality of pixels 5 by cofferdam 71.In addition, as shown in figure 16, each pixel electrode 33 its periphery and cofferdam 71 under the situation of overlooking is overlapping.

At this, in cofferdam 71, comprise as at the cofferdam 71a at directions X adjacent pixels group 25 position each other with as first pixel 5 of one group of pixel group 25 ₁With second pixel 5 ₂Between the cofferdam 71b at position.The width dimensions of the directions X of cofferdam 71b is set to longer than the width dimensions of the directions X of cofferdam 71a.

And as Figure 14 and shown in Figure 16, in each pixel 5, the connecting portion 69 of pixel electrode 33 and contact hole CH8 are overlapping with cofferdam 71b under the situation of overlooking.That is, connecting portion 69 and contact hole CH8 are hidden in cofferdam 71b under the situation of overlooking.

As shown in Figure 7, in display surface 3 sides of pixel electrode 33, in 71 area surrounded in cofferdam, be provided with organic layer 35.

Organic layer 35 and each pixel 5 corresponding setting have hole injection layer 73, hole transporting layer 75 and luminescent layer 77.

Hole injection layer 73 is made of organic material, under the situation of overlooking in by 71 area surrounded in cofferdam, be arranged on display surface 3 sides of pixel electrode 33.Hole injection layer 73 can obtain by applying aqueous organic material setting.

As the material of hole injection layer 73, can adopt 3, the mixture of the polythiophene dielectric of the poly-enedioxy thiophene (PEDOT) of 4-etc. and polystyrolsulfon acid (PSS) etc.As the material of hole injection layer 73, also can adopt polystyrene, polypyrrole, polyaniline, polyacetylene or their dielectric etc.

Hole transporting layer 75 is made of organic material, under the situation of overlooking in by 71 area surrounded in cofferdam, be arranged on display surface 3 sides of hole injection layer 73.Hole injection layer 75 can obtain by applying aqueous organic material setting.

As the material of hole transporting layer 75, for example can adopt comprise following compound shown in the structure of triphenylamine base polymer of TFB etc.

Compound 1

Luminescent layer 77 is made of organic material, under the situation of overlooking in by 71 area surrounded in cofferdam, be arranged on display surface 3 sides of hole transporting layer 75.Luminescent layer 77 can obtain by applying aqueous organic material setting.

Material as the luminescent layer corresponding with the pixel 5r of R 77 for example can adopt the CN-PPV shown in the following compound.

Compound 2

As the material of the luminescent layer corresponding 77, for example can adopt the material that the F8BT shown in the following compound 3 and the TFB shown in the above-claimed cpd 1 are mixed with 1:1 with the pixel 5g of G.

Compound 3

As the material of the luminescent layer corresponding 77, for example can adopt (the poly-dioctyl fluorene: PFO) of the F8 shown in the following compound 4 with the pixel 5b of B.

Compound 4

As shown in Figure 7, display surface 3 sides at organic layer 35 are provided with common electrode 37.Common electrode 37 for example by the material with photopermeability of ITO and indium-zinc oxide etc., make filming such as magnesium silver and the material etc. of giving photopermeability constitutes, stride across from display surface 3 sides and cover organic layer 35 and cofferdam 71 between a plurality of pixels 5.

In addition, in display unit 1, luminous zone is defined under the situation of overlooking pixel electrode 33 and organic layer 35 and common electrode 37 overlapping areas in by cofferdam 71 area surrounded in each pixel 5.

Display surface 3 sides at common electrode 37 are provided with auxiliary wiring 39.Auxiliary wiring 39 be set at than common electrode 37 more close display surface 3 sides under the situation of overlooking with cofferdam 71b overlapping areas.For example can adopt the metal of aluminium, copper, gold, silver, molybdenum, tungsten, chromium etc. or comprise their alloy etc. as auxiliary wiring 39.

This auxiliary wiring 39 and common electrode 37 conductings have the function of the conductivity of auxiliary common electrode 37.

Hermetic sealing substrate 13 has second substrate 81.Second substrate 81 for example is made of the material with photopermeability of glass or quartz etc., its have towards the export-oriented face 82a of display surface 3 sides and towards the bottom surface opposed faces 82b of 15 sides.

On the opposed faces 82b of second substrate 81, be provided with photomask 83.Photomask 83 for example is made of the high material of light absorption of the resin that contains carbon black etc., chromium etc.Photomask 83 strides across between a plurality of pixels 5 that constitute matrix M and is provided with.That is, photomask 83 is arranged under the situation of overlooking and a plurality of pixels 5 overlapping areas that constitute matrix M.

Be provided with on the photomask 83 under the situation of overlooking and first pixel 5 that constitutes each pixel group 25 ₁With second pixel 5 ₂ Overlapping peristome 85.

Shown in Figure 17 as the plane graph of photomask 83 and pixel group 25, each peristome 85 and each pixel group 25 corresponding setting.In addition, in this Figure 17,, photomask 83 is implemented shade for the easy to understand structure.

In addition, as shown in Figure 7, be provided with the chromatic filter 87 that covers the zone in the peristome 85 from bottom surface 15 sides at the opposed faces 82b of second substrate 81.By each peristome 85 chromatic filter 87 is set.

At this, chromatic filter 87 can make that the light in provision wavelengths zone passes through among the light of incident.Chromatic filter 87 is by constituting with painted resin of each pixel group 25r, pixel group 25g and pixel group 25b different colours etc.

The chromatic filter 87 corresponding with pixel group 25r can make the light of R pass through.The chromatic filter 87 corresponding with pixel group 25g can make the light of G pass through.The chromatic filter 87 corresponding with pixel group 25b can make the light of B pass through.In addition, discerning under the situation of R, G and B use chromatic filter 87r, 87g and this mark of 87b for each chromatic filter below.

At this, in display unit 1, the luminescent layer 77 of pixel 5r penetrates the light of R.The light transmission chromatic filter 87r of the R that penetrates from the luminescent layer 77 of pixel 5r, the colorimetric purity of R is enhanced thus.In addition, the light transmission chromatic filter 87g of the G that penetrates from the luminescent layer 77 of pixel 5g, the colorimetric purity of G is enhanced thus, the light transmission chromatic filter 87b of the B that penetrates from the luminescent layer 77 of pixel 5b, the colorimetric purity of B is enhanced thus.

Be provided with protective layer (overcoat layer) 89 in the bottom surface of photomask 83 and chromatic filter 87 15 sides.Protective layer 89 is made of the resin with photopermeability etc., and 15 sides cover photomask 83 and chromatic filter 87 from the bottom surface.

15 sides are provided with resin bed 93 in the bottom surface of protective layer 89.Resin bed 93 for example is made of the material with photopermeability of acrylic resin or epoxylite etc., with each pixel 5 corresponding formation prism 95a of portion and 95b.In display unit 1, the 95a of prism portion and first pixel 5 ₁Correspondence, the 95b of prism portion and second pixel 5 ₂Corresponding.

Hermetic sealing substrate 13 and device substrate 11 with said structure under the 95a of prism portion and the 95b side of resin bed 93 state relative with common electrode 37 sides, form by bonding agent 97 adhering resin layers 93 and common electrode 37.

In display unit 1, seal 17 shown in Figure 2 is by the opposed faces 82b clamping of first 42a of first substrate 41 shown in Figure 7 and second substrate 81.That is, in display unit 1, it is sealed that bonding agent 97 passes through first substrate 41 and second substrate 81 and seal 17.In addition, seal 17 also can be arranged between resin bed 93 and the common electrode 37.In this case, can think that bonding agent 97 is by device substrate 11 and hermetic sealing substrate 13 and seal 17 sealings.

In addition, bonding agent 97 arrives in the 95a of prism portion and 95b of resin bed 93.In addition, as the material of bonding agent 97, can adopt photopermeability and the refractive index material different with the refractive index of resin bed 93.Thus, can make from the luminescent layer 77 of each pixel 5 and arrive the corresponding 95a of prism portion and the light of 95b reflects by 95a of prism portion and 95b respectively.

In display unit 1, the refractive index of resin bed 93 is set to the refractive index height than bonding agent 97.And each 95a of prism portion and 95b are set to the light that makes from the luminescent layer 77 of each pixel 5 of correspondence to the such shape of peristome 85 refractions.

In the display unit 1 with said structure, by making luminescent layer 77 luminous according to each pixel 5, control shows thus.Be controlled at the electric current that each organic layer 35 flows by each driving transistors 29, the luminance of luminescent layer 77 is changed in each pixel 5.

As shown in Figure 6, to each scan line GT ₁(h) supply with control signal CS ₁(h).Similarly, to each scan line GT ₂(h) supply with control signal CS ₂(h).Control signal CS ₁(h) and control signal CS ₂(h) by alternative supply.That is, to scan line GT ₁(1) supplies with control signal CS ₁(1) afterwards, to scan line GT ₂(1) supplies with control signal CS ₂(1).

With picture signal DS ₁(j) as parallel signal to each data wire SI ₁(j) supply with.Similarly, with picture signal DS ₂(j) as parallel signal to each data wire SI ₂(j) supply with.Picture signal DS ₁(j) and picture signal DS ₂(j) by alternative supply.That is, with picture signal DS ₁(1)～DS ₁(n) to data wire SI ₁(1)～SI ₁(n) after the supply, with picture signal DS ₂(1)～DS ₂(n) to data wire SI ₂(1)～SI ₂(n) supply with.

As shown in figure 18, control signal CS ₁(h) and control signal CS ₂(h) respectively in an image duration only once, through than an image duration short during t1 and keep the selection current potential of Hi level.At a time becoming the selection current potential only is control signal CS ₁(h) and control signal CS ₂(h) among one.

If scan line GT ₁(h) become the selection current potential, then with this scan line GT ₁(h) Dui Ying a plurality of first pixels 5 ₁ Selection transistor 27 be in the ON state.At this moment, to data wire SI ₁(1)～SI ₁(n) picture signal DS ₁(1)～DS ₁(n), by selecting transistor 27, supply to the 55a of gate electrode portion and the electrode part 55b (Figure 12) of driving transistors 29.That is, in first pixel 5 ₁In, 55a of gate electrode portion and electrode part 55b become and picture signal DS ₁(j) Dui Ying current potential.

Similarly, as scan line GT ₂(h) for selecting current potential, with this scan line GT ₂(h) Dui Ying a plurality of second pixels 5 ₂ Selection transistor 27 be in the ON state.At this moment, to data wire SI ₂(1)～SI ₂(n) the picture signal DS of Gong Geiing ₂(1)～DS ₂(n), by selecting transistor 27, supply to the 55a of gate electrode portion and the electrode part 55b (Figure 12) of driving transistors 29.That is, in second pixel 5 ₂In, 55a of gate electrode portion and electrode part 55b become and picture signal DS ₂The current potential of current potential correspondence (j).

At this moment, with the corresponding electric current of current potential of the 55a of gate electrode portion of driving transistors 29, flow to drain region 51c by source region 51a and channel region 51b from power line PW (h).

Then, the electric current from power line PW (h) flows at organic layer 35 (Fig. 7) via drain electrode 59 and pixel electrode 33.

On the other hand because between electrode part 55b and the power line PW (h) between (Figure 13), electrode part 55b and the electrode part 51d, accumulating has electric charge, so the current potential of the 55a of gate electrode portion of driving transistors 29 be held certain during.As a result, during the current potential that keeps the gate electrode 55a of portion, electric current continues to flow at organic layer 35.

Like this, in display unit 1 since with picture signal DS ₁(j), picture signal DS ₂The electric current of current potential correspondence (j) flows at organic layer 35, thus can with the photocontrol of sending from luminescent layer 77 according to each pixel 5 with picture signal DS ₁The brightness of current potential correspondence (j).Thus, in display unit 1, can carry out tonal gradation and show.

In addition, in display unit 1, can the different moment to each first pixel 5 ₁With second pixel 5 ₂Supply with picture signal DS ₁(j) and picture signal DS ₂(j).Therefore, can be with the picture signal DS corresponding with first image ₁(j) and the picture signal DS corresponding with second image ₂(j) separately handle.As a result, can omit will be corresponding with first image picture signal DS ₁(j) and the picture signal DS corresponding with second image ₂(j) processing synthetic and that supply with synchronization.

At this, as mentioned above, display unit 1 has the photomask 83 that is provided with peristome 85 by each pixel group 25.From each first pixel 5 ₁The light of luminescent layer 77 penetrate towards display surface 3 by peristome 85.

At this moment, from each first pixel 5 ₁The light 111a that penetrates towards display surface 3, shown in Figure 19 as the sectional view that schematically shows many group pixel groups 25 and photomask 83 arrives first scope 113 by each peristome 85.

In addition, from each second pixel 5 ₂Light 111b towards display surface 3 penetrates arrives second scope 115 by each peristome 85.In addition, cross section shown in Figure 19 is suitable with the cross section in the A-A line among Fig. 1.

Can be to from first pixel 5 from first scope 113 by peristome 85 ₁Light 111a carry out visual confirmation.Can be to from second pixel 5 from second scope 115 by peristome 85 ₂Light 111b carry out visual confirmation.As long as in first scope 113, have viewpoint, just can be to by from a plurality of first pixels 5 ₁First image that forms of light 111a carry out visual confirmation.As long as in second scope 115, have viewpoint, just can be to by from a plurality of second pixels 5 ₂Second image that forms of light 111b carry out visual confirmation.That is, in display unit 1, can carry out showing first image, showing that in second scope 115 different the so-called directive property of second image shows with first scope 113 in first scope 113.

First scope 113 and second scope 115 have the scope 117 of mutual repetition.Can under the state of first image and second doubling of the image, carry out visual confirmation to them from this scope 117.Can only carry out visual confirmation from the scope 119a (below be called effective range 119a) that scope 113 is removed scope 117 to first image.In addition, can only carry out visual confirmation from the scope 119b (below be called effective range 119b) that scope 115 is removed scope 117 to second image.

Display unit 1 constitutes from a plurality of first pixels 5 ₁The light 111a that penetrates intersects at the two ends of first scope 113 respectively, from a plurality of second pixels 5 ₂The light 111b that penetrates intersects at the two ends of second scope 115 respectively.This can be by being set at than being achieved at directions X adjacent pixels group 25 interval Pb weak point each other at the adjacent peristome 85 interval Pa each other of directions X.

Thus, can make from any viewpoint visual confirmation of being positioned at effective range 119a to light quantity in a plurality of first pixels 5 ₁Between equate.Similarly, can make from any viewpoint visual confirmation of being positioned at effective range 119b to light quantity in a plurality of second pixels 5 ₂Between equate.

In display unit 1, photomask 83 is corresponding with light shield layer, and the pixel electrode 33 and first electrode pair are answered, and the common electrode 37 and second electrode pair are answered, and driving transistors 29 is corresponding with transistor, selects transistor 27 corresponding with switch element.In addition, scan line GT ₁With scan line GT ₂Corresponding with control line, data wire SI ₁And data wire SI ₂Corresponding with holding wire, source electrode part 65 and contact hole CH7 are corresponding with connecting portion, and connecting portion 69 and contact hole CH8 are corresponding with second connecting portion.In addition, cofferdam 71b is corresponding with second light shield layer, and directions X is corresponding with first direction, and the Y direction is corresponding with second direction.

In display unit 1, photomask 83 is set at second substrate 81.That is, photomask 83 is between first substrate 41 and second substrate 81.Therefore, be configured in device substrate 11 with photomask 83 and compare, can shorten the distance between a plurality of pixels 5 and the photomask 83 with the situation in the outside of hermetic sealing substrate 13.Thereby, can easily enlarge effective range 119a and effective range 119b in the directive property demonstration.

In addition, in display unit 1, power line PW extends at directions X.Therefore, for example with power line PW along comparing in the situation that the Y direction is extended each other in directions X adjacent pixels 5, can easily shorten pixel 5 interval each other in the directions X.Thus, can easily improve picture element density in the directions X.As a result, can realize easily that the height in the directive property demonstration becomes more meticulous.

In addition, in display unit 1, can adopt light to pass through the top emission type organic El device that hermetic sealing substrate 13 penetrates from display surface 3 from luminescent layer 77.

At this, under the situation of light via the bottom-emission type of first substrate, 41 ejaculations of device substrate 11 that adopts from luminescent layer 77, first substrate 41 is between luminescent layer 77 and photomask 83.Therefore, in the bottom-emission type, be difficult to shorten the distance between luminescent layer 77 and the photomask 83.

Yet, in display unit 1,, can easily shorten the distance between luminescent layer 77 and the photomask 83 owing to adopt top emission type.

In addition, in display unit 1, select transistor 27, driving transistors 29 to be arranged on than 15 side places, luminescent layer 77 more close bottom surfaces.On the other hand, from the light of luminescent layer 77, penetrate from display surface 3 by hermetic sealing substrate 13.That is, select transistor 27, driving transistors 29 not to hinder from luminescent layer 77 advancing towards the light of display surface 3 sides.Thereby, can easily improve utilization ratio from the light of luminescent layer 77.On the other hand, can easily improve the degree of freedom of the allocation position under the situation of overlooking of selecting transistor 27, driving transistors 29 etc.

In addition, in display unit 1, resin bed 93 is between luminescent layer 77 and photomask 83.In resin bed 93, compare with the fragile material of glass, quartz etc. and can easily adjust thickness.Therefore, in display unit 1,, can easily adjust effective range 119a and effective range 119b by adjusting the thickness of resin bed 93.

In addition, in display unit 1, resin bed 93 is provided with 95a of prism portion and 95b.Therefore, can be easily in the future the light of spontaneous photosphere 77 guide to each peristome 85.Thus, can be easy to further improve the utilization ratio of light.

In addition, in display unit 1, a plurality of luminescent layers 77 according to each pixel 5 be divided into the light that sends R luminescent layer 77, send G light luminescent layer 77 and send the luminescent layer 77 of the light of B.Therefore, can carry out colour in directive property shows shows.

In addition, in display unit 1, corresponding each peristome 85 is provided with chromatic filter 87.Each peristome 85 is corresponding with each pixel group 25.Therefore, can make first pixel 5 that constitutes each pixel group 25 ₁With second pixel 5 ₂A shared chromatic filter 87.

In addition, owing to each chromatic filter 87 is located in each peristome 85, so can easily reduce the thickness of display unit 1.

In addition, in display unit 1, owing to capacity cell 31 is arranged between first substrate 41 and the power line PW, and overlapping with power line PW under the situation of overlooking, so can easily dwindle the zone of each pixel 5.Thus, can be easy to further improve picture element density, can be easy to further realize that the height in the directive property demonstration becomes more meticulous.

In addition, in display unit 1, in each pixel 5, select transistor 27 and driving transistors 29 to be arranged on the position that stands facing each other at Y direction clamping power line PW under the situation of overlooking.Therefore, can be easy to selecting between transistor 27 and the driving transistors 29 capacity cell 31 to be set.As a result, can be easy to dwindle the zone of each pixel 5.

In addition, in display unit 1, the source region 51a of driving transistors 29, channel region 51b and drain region 51c arrange at directions X.And, select source region 53a, channel region 53b and the drain region 53c of transistor 27 to arrange at directions X.Therefore, can be easy to expand the zone of selecting between transistor 27 and the driving transistors 29.Thus, can more easily select between transistor 27 and the driving transistors 29 capacity cell 31 to be set.

In addition, in display unit 1, at driving transistors 29, island electrode 55 has 55a of gate electrode portion and electrode part 55b, and first semiconductor layer 51 has electrode part 51d.Electrode part 55b and electrode part 55d are opposed mutually, and overlapping with power line PW under the situation of overlooking.And electrode part 55b is electrically connected with the drain region 53c that selects transistor 27, and electrode part 51d is electrically connected with power line PW.Therefore, can make electrode part 55b, electrode part 51d and power line PW constitute the part of capacity cell 31.

On the other hand, source region 51a, the channel region 51b of the 55a of gate electrode portion of island electrode 55, first semiconductor layer 51 and drain region 51c constitute driving transistors 29.That is, in display unit 1, can common drive transistor 29 and capacity cell 31.As a result, can more easily dwindle the zone of each pixel 5, can be easy to further realize that the height in the directive property demonstration becomes more meticulous.

In addition, in display unit 1, the drain region 51c of first semiconductor layer 51 is arranged on the outside of power line PW under the situation of overlooking.And the drain region 51c of first semiconductor layer 51 and each pixel electrode 33 outside at power line PW under the situation of overlooking is electrically connected.Therefore, under the situation that hindered by power line PW, each driving transistors 29 and each pixel electrode 33 can be electrically connected.

In addition, in display unit 1, first pixel 5 in one group of pixel group 25 ₁With second pixel 5 ₂Between, the drain region 51c of first semiconductor layer 51 is positioned at clamping power line PW and mutual opposition side each other under the situation of overlooking.Therefore, in these first pixels 5 ₁With second pixel 5 ₂Between, the drain region 51c that can be easy to make first semiconductor layer 51 each other away from.Thereby, in these first pixels 5 ₁With second pixel 5 ₂Between, can be easy to make each contact hole CH8 each other away from.Thus, in these first pixels 5 ₁With second pixel 5 ₂In, can be easy to enlarge the zone under overlooking of each contact hole CH8.As a result, can be easy to enlarge the zone under the situation of overlooking of each connecting portion 69, can be easy to make the conductivity in each connecting portion 69 to improve.

In addition, in display unit 1, scan line GT ₁With first pixel 5 ₁Corresponding setting, scan line GT ₂With second pixel 5 ₂The corresponding setting.Therefore, can be in each first pixel 5 ₁With second pixel 5 ₂Make a plurality of selection transistors 27 be in the ON state with the different moment.Thus, can the different moment to each first pixel 5 ₁With second pixel 5 ₂Supply with picture signal DS ₁(j) and picture signal DS ₂(j).As a result, can be with the picture signal DS corresponding with first image ₁(j) and the picture signal DS corresponding with second image ₂(j) separately handle.

In addition, in display unit 1, first pixel 5 in one group of pixel group 25 ₁With second pixel 5 ₂In, each selects transistor 27 and each driving transistors 29 to be positioned at and these first pixels 5 ₁With second pixel 5 ₂Corresponding data line SI ₁With data wire SI ₂Between.Therefore, can be easy to shorten these first pixels 5 ₁With second pixel 5 ₂The interval of directions X.

In addition, in display unit 1, power line PW strides across directions X adjacent pixels group 25 each other.Directions X adjacent pixels group 25 each other, two data wire SI ₁And SI ₂Extend in the Y direction.Power line PW strides across these data wires SI at directions X ₁And SI ₂

At this, at two data wire SI ₁And SI ₂Between, be easy to form parasitic capacitance.Yet, in display unit 1, because power line PW strides across these data wires SI ₁And SI ₂So, at power line PW and data wire SI ₁Between and power line PW and data wire SI ₂Between be easy to form electric capacity.Therefore, can be easy to reduce two data wire SI ₁And SI ₂Between electricity interfere, realize the raising of display quality.

In addition, in display unit 1, contact hole CH7 and source electrode part 65 are arranged on each data wire SI corresponding with each pixel 5 under the situation of overlooking ₁And SI ₂, and the electrode part 55b of island electrode 55 between.Therefore, can be easy to reduce capacity cell 31 and each data wire SI ₁And SI ₂Between electricity interfere, realize the raising of display quality.

In addition, in display unit 1, the connecting portion 69 of pixel electrode 33 and contact hole CH8 are overlapping with cofferdam 71b under the situation of overlooking.Therefore, under the situation of overlooking, can be easy to hide connecting portion 69 and contact hole CH8 with cofferdam 71b.

In addition, in display unit 1, auxiliary wiring 39 and cofferdam 71 are overlapping under the situation of overlooking.Therefore, auxiliary wiring 39 can not hinder from each luminescent layer 77 advancing towards the light of display surface 3 sides.Thereby auxiliary wiring 39 can adopt the material with light-proofness.In addition, can increase the thickness of auxiliary wiring 39.Therefore, the conductivity of auxiliary wiring 39 is improved.

In addition, in display unit 1, the width dimensions of the directions X of cofferdam 71b is longer than the width dimensions of the directions X of cofferdam 71a.Cofferdam 71b is arranged in first pixel 5 of one group of pixel group 25 ₁With second pixel 5 ₂Between.That is, cofferdam 71b is overlapping with each peristome 85 under the situation of overlooking.

At this,, then can in directive property shows, the scope 117 of first image and second doubling of the image be narrowed down if increase the width dimensions of the directions X of cofferdam 71b.Thereby, in display unit 1, can be easy to enlarge effective range 119a and effective range 119b in the directive property demonstration.

In addition, in display unit 1, auxiliary wiring 39 is arranged under the situation of overlooking and cofferdam 71b overlapping areas.Therefore, compare with under the situation of overlooking, auxiliary wiring 39 being arranged on the structure of cofferdam 71a overlapping areas, can enlarge the width dimensions of the directions X of auxiliary wiring 39.As a result, can further improve the conductivity of auxiliary wiring 39.

In addition, in display unit 1,, adopt the TFT element of P channel-types as driving transistors 29 as the TFT element of selecting transistor 27 employing N channel-types.But selection transistor 27 is not limited to the TFT element of N channel-type, also can adopt the TFT element of P channel-type.In addition, driving transistors 29 is not limited to the TFT element of P channel-type, also can adopt the TFT element of N channel-type.

In addition, in display unit 1,, select the structure between transistor 27 and the driving transistors 29 to be not limited thereto though adopt the structure of the electrode part 55b electrical connection of the drain region 53c will select transistor 27 and driving transistors 29.Also can adopt the structure of inserting new capacity cell at the electrode part 55b of drain region 53c that selects transistor 27 and driving transistors 29.

In addition, in display unit 1, though to be that example is illustrated by applying the situation that aqueous organic material is provided with the so-called coating process of organic layer 35, the formation of organic layer 35 is not limited to coating process, for example also can adopt the vapour deposition method of having applied flexibly evaporation coating technique.

In addition, in display unit 1, though to select the so-called active array type of transistor 27 or driving transistors 29 be that example is illustrated to be provided with according to each pixel 5, display unit 1 is not limited thereto, and also can adopt passive matrix.In the display unit 10 that adopts passive matrix, as shown in figure 20, device substrate 20 has first substrate 41, a plurality of first electrode 131, organic layer 35, cofferdam 71 and a plurality of second electrode 133.In addition, display unit 10 has the structure same with display unit 1 except device substrate 20.Thereby, below to the identical symbol of the corresponding structure of the structure of display unit 1 mark, and omit detailed explanation.

Each first electrode 131 is between first substrate 41 and organic layer 35, respectively in the banded extension of Y direction.A plurality of first electrodes 131 are spaced from each other at interval and arrange at directions X.

Each second electrode 133 is between organic layer 35 and hermetic sealing substrate 13, respectively in the banded extension of directions X.A plurality of second electrodes 133 are spaced from each other at interval and arrange at directions X.

Each first electrode 131 and each second electrode 133 clip organic layer 35 and intersect mutually.And in display unit 10, the zone of each pixel 5 is defined in 71 area surrounded in cofferdam under the situation of overlooking, each first electrode 131 and each second electrode, 133 overlapping areas.

In addition, in display unit 1 and display unit 10,, be not limited thereto, also can adopt the structure of omitting chromatic filter 87 though adopt corresponding each peristome 85 to be provided with the structure of chromatic filter 87.In display unit 1 and display unit 10, since with a plurality of luminescent layers 77 by each pixel 5 be divided into the light that sends R luminescent layer 77, send G light luminescent layer 77 and send the luminescent layer 77 of the light of B, even, also can carry out colour and show so omit chromatic filter 87.

In addition, in display unit 1 and display unit 10, though so that a plurality of luminescent layers 77 are divided into 5 luminescent layers 77 that send the light of R, send the luminescent layer 77 of light of G and the situation of luminescent layer 77 of sending the light of B is that example is illustrated by each pixel, the structure of display unit 1 is not limited thereto.As display unit 1, can adopt the luminescent layer 77 that replaces each light that sends R, G and B, and have the structure of the luminescent layer 77 that sends white light.Because in display unit 1, be provided with different chromatic filter 87r, 87g and 87b by each peristome 85, so even, also can carry out colour demonstration from the only white of all luminescent layers 77.

In this case, in display unit 1 and display unit 10, organic layer 35 is set up under the continuum of states striding across between a plurality of pixels 5.Striding across under the situation about being set up under the continuum of states between a plurality of pixels 5 at organic layer 35, in display unit 1, the zone of each pixel 5 is defined in pixel electrode 33 and common electrode 37 overlapping areas under the situation of overlooking.

In addition, in Figure 20 and Figure 21,, shade is implemented in the zone of each pixel 5 for the easy to understand structure.

In display unit 1 and display unit 10, as shown in Figure 5, though be that example is illustrated with many groups pixel group 25 along the situation of the rectangular assortment of all directions of directions X and Y direction, the assortments of many group pixel groups 25 are not limited thereto.As shown in figure 22, the assortment of organizing pixel group 25 also can be adopted the assortment of for example arranging in a zigzag in the Y direction more.Under the situation of assortment shown in Figure 22, first pixel 5 shown in Figure 4 ₁With second pixel 5 ₂Alternately arrange at directions X, and also alternately arrange in the Y direction.

In this case, in display unit 1 and display unit 10, as shown in figure 23, be provided with each peristome 85 of photomask 83 at each pixel group 25.Thereby, many group pixel groups 25 the Y direction with the zigzag structure arranged in, a plurality of peristomes 85 also in the Y direction to arrange in a zigzag.Therefore, compare along the situation of the rectangular assortment of direction separately of directions X and Y direction, can shorten adjacent obliquely peristome 85 distance each other with many groups pixel group 25.As a result, can easily improve the exploring degree of the incline direction in the showing separately of first image and second image, can be easy to further to realize that the height of directive property in showing becomes more meticulous.

In addition, be suitable for many groups pixel group 25 for display unit 1 in the display unit 100 of Y direction with the zigzag structure arranged, as shown in figure 24, in that adjacent pixels group 25 each other can shared scan line GT obliquely with respect to the Y direction ₁With scan line GT ₂

In display unit 1, scan line GT is set at each pixel column 23 ₁With scan line GT ₂With respect to this, in display unit 100, can make at Y direction adjacent pixels row 23 shared each other scan line GT ₁With scan line GT ₂Therefore, in display unit 100, compare, can reduce scan line GT with display unit 1 ₁With scan line GT ₂Quantity.

In addition, in display unit 100, in a pixel column 21 (Fig. 3), comprise first pixel 5 ₁With second pixel 5 ₂Therefore, with each data wire SI of each pixel column 21 corresponding setting, not with first pixel 5 ₁With second pixel 5 ₂Corresponding separately.That is, each data wire SI is by first pixel 5 ₁With second pixel 5 ₂Institute is shared.

In addition, even in display unit 100, also can adopt the structure of omitting chromatic filter 87.Even adopt the structure of omitting chromatic filter 87, also, can carry out colour and show with display unit 1 and same in display unit 100.

Omit in display unit 100 under the situation of chromatic filter 87, pixel column 21r shown in Figure 3, pixel column 21g and pixel column 21b are listed as repeatedly along directions X one by this order and arrange, and can reduce to each data wire SI ₁And SI ₂The aspect of the exchange of the data assortment of supplying with is preferred.

In addition, in display unit 1,10 and 100 and omit from their structure of chromatic filter 87, be that example is illustrated with the structure that is provided with 95a of prism portion and 95b at each resin bed 93 respectively, but the structure of resin bed 93 is not limited thereto.As shown in figure 25, resin bed 93 also can adopt the structure that is provided with lens section 141.In this case, as the material of bonding agent 97, adopt the big material of refractive index of refractive index ratio resin bed 93.

Above-mentioned display unit 1,10 and 100 and omit the structure of chromatic filter 87 from their can be applicable to the display part 510 of electronic equipment for example shown in Figure 26 500 respectively.This electronic equipment 500 is display devices that Vehicular navigation system is used.In electronic equipment 500, by having utilized display unit 1,10 or 100, perhaps omit the display part 510 of the structure of chromatic filter 87 from them, for example can carry out visual confirmation to images such as map, can carry out visual confirmation to images such as image from copilot's seat side as second image from the operator's seat side as first image.

In addition,, perhaps omit the structure of chromatic filter 87, so can easily enlarge effective range 119a and effective range 119b in the directive property demonstration from them owing to can be suitable for display unit 1,10 or 100 as display part 510.

And then, in electronic equipment 500,, perhaps omit the structure of chromatic filter 87 from them in display unit 1,10 or 100, owing to can easily improve the picture element density of directions X, become more meticulous so can realize the height in the directive property demonstration.

In addition,, be not limited to Vehicular navigation system, can enumerate various electronic equipments such as mobile phone, mobile computer, digital still camera, digital camera, mobile unit and stereo set as electronic equipment 500.

Claims (20)

1. electro-optical device, it comprises:

First substrate;

Second substrate relative with described first substrate;

The luminescent layer that between described first substrate and described second substrate, is provided with; With

The light shield layer that between described second substrate and described luminescent layer, is provided with,

Described luminescent layer is controlled luminous in each described pixel of a plurality of pixels,

Described a plurality of pixel comprises first pixel that forms first image and second pixel that forms second image at least,

Be provided with peristome at described light shield layer, in the described peristome by arriving the light of first scope via described second substrate, and by arrive the light of second scope via described second substrate from the described luminescent layer of described second pixel from the described luminescent layer of described first pixel.

2. electro-optical device as claimed in claim 1 is characterized in that, comprising:

First electrode, it is oppositely arranged with described luminescent layer between described first substrate and described luminescent layer;

Second electrode, it is oppositely arranged with described luminescent layer between described luminescent layer and described light shield layer; With

Switch element, itself and the corresponding setting of each described pixel switch one from described first electrode and described second electrode supply and the blocking via another electric current that flows of described luminescent layer in described first electrode and described second electrode,

Described switch element is arranged between described first substrate and the described luminescent layer.

3. electro-optical device as claimed in claim 2 is characterized in that:

Between described luminescent layer and described light shield layer, resin bed is arranged.

4. electro-optical device, it comprises:

First substrate;

Second substrate relative with described first substrate;

Luminescent layer, it is arranged between described first substrate and described second substrate, and control is luminous in each described pixel of a plurality of pixels;

Light shield layer, it is arranged between described second substrate and the described luminescent layer;

First electrode, it is oppositely arranged with described luminescent layer between described first substrate and described luminescent layer;

Second electrode, it is oppositely arranged with described luminescent layer between described luminescent layer and described light shield layer;

Transistor, itself and the corresponding setting of each described pixel are controlled via described luminescent layer another electric current that flows in described first electrode and described second electrode one from described first electrode and described second electrode; With

Power line, it is arranged between described another substrate and described first electrode, to a plurality of described transistor supply capabilities,

Described a plurality of pixel comprises first pixel that forms first image and second pixel that forms second image at least,

Described first pixel and described second pixel are alternately arranged at first direction under the situation of overlooking,

Be provided with peristome at described light shield layer, in the described peristome by arrive the light of first scope via described second substrate from the described luminescent layer of described first pixel, and by arrive the light of second scope via described second substrate from the described luminescent layer of described second pixel

Described power line extends along described first direction.

5. electro-optical device as claimed in claim 4 is characterized in that:

Between described luminescent layer and described light shield layer, resin bed is arranged.

6. as claim 4 or 5 described electro-optical devices, it is characterized in that, comprising:

A plurality of control lines;

A plurality of holding wires;

Capacity cell, itself and the corresponding setting of each described pixel keep the current potential of described transistorized grid; With

Switch element, it is arranged between the described holding wire and each described capacity cell among described a plurality of holding wire, is controlled by the control signal that one among described a plurality of control lines described control line is supplied with,

Described capacity cell, it is arranged between described first substrate and the described power line, and overlapping with described power line under the situation of overlooking.

7. electro-optical device as claimed in claim 6 is characterized in that:

Described transistor and described switch element are arranged at the position that the described power line of clamping stands facing each other on the second direction of intersecting with described first direction under the situation of overlooking.

8. electro-optical device as claimed in claim 7 is characterized in that:

Described transistor and described switch element are separately positioned between described first substrate and the described power line,

Described transistor has first semiconductor layer that is provided with channel region and source region and drain region,

Described switch element has second semiconductor layer that is provided with channel region and source region and drain region,

In described first semiconductor layer, arrange at described first direction described channel region and described source region and described drain region,

In described second semiconductor layer, arrange at described first direction described channel region and described source region and described drain region.

9. electro-optical device as claimed in claim 8 is characterized in that:

Described transistor has island electrode overlapping with the described channel region of described first semiconductor layer under the situation of overlooking,

Among described first semiconductor layer and the described island electrode at least one, a part constitutes at least a portion of described capacity cell.

10. electro-optical device as claimed in claim 9 is characterized in that:

Described island electrode and described first semiconductor layer have the length that strides across described power line under the situation of overlooking in described second direction,

The outside of described drain region described power line under the situation of overlooking of described island electrode and described second semiconductor layer is electrically connected.

11., it is characterized in that as each described electro-optical device in the claim 8～10:

The described drain region of described first semiconductor layer is arranged at the outside of described power line under the situation of overlooking,

The outside of the described drain region of described first semiconductor layer and described first electrode described power line under the situation of overlooking is electrically connected.

12. electro-optical device as claimed in claim 11 is characterized in that:

In the adjacent described pixel of described first direction each other, the described drain region of described first semiconductor layer is located at each other and clips the mutual opposition side of described power line under the situation of overlooking.

13. electro-optical device as claimed in claim 12 is characterized in that:

At least described first pixel is adjacent at described first direction with described second pixel,

Each described control line extends at described first direction, and at least with each corresponding setting of described first pixel and described second pixel,

Each described holding wire extends in described second direction, and at least with each corresponding setting of described first pixel and described second pixel.

14. electro-optical device as claimed in claim 13 is characterized in that:

Between described first direction adjacent described first pixel and described second pixel, the described transistor of described first pixel is adjacent at described first direction with the described switch element of described second pixel,

Described first pixel and described second pixel are also adjacent in described second direction,

Between described second direction adjacent described first pixel and described second pixel, the described transistor of described first pixel and the described switch element of described second pixel, it is adjacent in described second direction to clip a described control line at least.

15., it is characterized in that as claim 13 or 14 described electro-optical devices:

In described first direction adjacent described first pixel and described second pixel,

Described transistor in described first pixel and described switch element, and described transistor in described second pixel and described switch element, under the situation of overlooking the described holding wire corresponding with described first pixel and with the corresponding described holding wire of described second pixel between.

16. electro-optical device as claimed in claim 15 is characterized in that:

Described a plurality of pixel is divided into many group pixel groups, and described many group pixel groups are one group of pixel group with a plurality of described pixel that is included in adjacent described first pixel of described first direction and described second pixel at least,

The described pixel group of many groups is arranged at described first direction,

Described a plurality of holding wire is arranged between described first substrate and the described power line, and has the length that strides across described power line in described second direction,

Described power line strides across at the adjacent described pixel group of described first direction each other.

17. electro-optical device as claimed in claim 16 is characterized in that:

The connecting portion that is electrically connected described first semiconductor layer and described power line is in the zone that is arranged under the situation of overlooking between described holding wire and the described island electrode.

18. as each described electro-optical device in the claim 13～17, it is characterized in that, comprising:

Second connecting portion, it is electrically connected the described drain region and described first electrode of described first semiconductor layer; With

Second light shield layer, it is separated at least between described first direction adjacent described first pixel and described second pixel,

Described second light shield layer is arranged between described first electrode and the described light shield layer, and is overlapped in described second connecting portion corresponding with described first pixel and described second connecting portion corresponding with described second pixel under the situation of overlooking.

19. electro-optical device as claimed in claim 18 is characterized in that:

Have auxiliary wiring, described auxiliary wiring is configured between described second electrode and the described light shield layer, with described second electrode conduction,

Described auxiliary wiring is overlapping with described second light shield layer under the situation of overlooking.

20. an electronic equipment, it has in the claim 1～3 each described electro-optical device as display part.

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