CN101471181A - Composite capacitor - Google Patents
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- CN101471181A CN101471181A CNA2007103054516A CN200710305451A CN101471181A CN 101471181 A CN101471181 A CN 101471181A CN A2007103054516 A CNA2007103054516 A CN A2007103054516A CN 200710305451 A CN200710305451 A CN 200710305451A CN 101471181 A CN101471181 A CN 101471181A
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Abstract
The invention discloses a composite capacitor which comprises a base plate, at least a parallel-plate capacitor and at least a through-hole capacitor, wherein the base plate is provided with a plurality of through holes, and the parallel-plate capacitor is arranged on the base plate. At least a through-hole capacitor is connected with at least a parallel-plate capacitor in parallel. The through-hole capacitor comprises at least a positive layer, a first dielectric layer, a first negative layer and a second negative layer, wherein the positive layer is arranged on the inner surface of at least a through hole, and the surface of the positive layer has a porous structure. The first dielectric layer is arranged on the porous structure of the positive layer. The first negative layer covers the surface of the first dielectric layer, and the second negative layer covers the surface of the first negative layer, wherein the conductivity of the second negative layer is bigger than that of the first negative layer.
Description
Technical field
The present invention relates to a kind of composite capacitor (hybrid capacitor), but and be particularly related to a kind of voltage stabilizing and in high frequency descend low noise composite capacitor and manufacture method thereof.
Background technology
Being the multi-functional demand in response to electronic product, the IC of difference in functionality is packaged into a multi-functional IC module with three-dimensional stacked kenel, is system in package (System in Package, technological trend SiP).When different IC is done three-dimensional stacked integration, for solving the ill-matched problem of upper and lower layer IC pin, can add the layout again that one deck intermediary layer is used as upper and lower chip signal, upper and lower layer IC matched.Along with the raising of piling up the number of plies, (surface mounted device, SMD) electric capacity is in the layout of to be not sufficient on the circuit board reach and stablizes the voltage stabilizing demand of multilayer chiop under piling up with surface mounting devices.
In addition, along with the quickening of IC operating frequency, the denoising under the high frequency is if only depend on decoupling capacitance on the circuit board, and is then can the path under the IC multiple-level stack long because of transmission path, causes waiting the school series inductance to increase, and high-frequency noise is difficult for removal.
Summary of the invention
The invention provides a kind of composite capacitor, big electric capacity can be provided, so that the voltage stabilizing of chip chamber to be provided.
The present invention provides a kind of composite capacitor in addition, can remove High-frequency Interference.
The present invention proposes a kind of composite capacitor, comprises a substrate, at least one parallel plate capacitor and at least one through hole electric capacity, and wherein substrate has several through holes, and parallel plate capacitor then is positioned on the substrate.Be arranged at least one through hole and in parallel as for through hole electric capacity with parallel plate capacitor.Through hole electric capacity itself also can all or part of parallel connection.This through hole electric capacity comprises the anodal layer of one deck, one deck first dielectric layer, one deck first negative electrode layer and one deck second negative electrode layer at least.Above-mentioned anodal layer is positioned at the inner surface of above-mentioned through hole at least, and anodal layer is a loose structure to the surface that is less than within the through hole.First dielectric layer then is positioned on the loose structure of anodal layer at least.As for first negative electrode layer is the surface that is covered in first dielectric layer, and second negative electrode layer is the surface that is covered in first negative electrode layer, and wherein the conductivity of second negative electrode layer is greater than the conductivity of first negative electrode layer.
The present invention proposes a kind of composite capacitor in addition, comprises a substrate, at least one parallel plate capacitor and at least one through hole electric capacity, and wherein substrate has several through holes, and through hole electric capacity is arranged at least one through hole.Above-mentioned through hole electric capacity comprises the anodal layer of one deck, one deck first dielectric layer, one deck first negative electrode layer and one deck second negative electrode layer at least.Above-mentioned anodal layer is positioned at the inner surface of above-mentioned through hole at least, and anodal layer to the inner surface that is less than through hole is a loose structure.First dielectric layer then is positioned on the loose structure of anodal layer.As for first negative electrode layer is the surface that is covered in first dielectric layer, and second negative electrode layer is the surface that is covered in first negative electrode layer, and wherein the conductivity of second negative electrode layer is greater than the conductivity of first negative electrode layer.Then be positioned on the substrate around above-mentioned through hole electric capacity as for parallel plate capacitor, and in parallel with through hole electric capacity.Through hole electric capacity itself also can all or part of parallel connection.
In an embodiment of the present invention, the material of the anodal layer of above-mentioned through hole electric capacity comprises aluminium (Al), tantalum (Ta), niobium (Nb) or columbium monoxide (NbO).
In an embodiment of the present invention, first dielectric layer of above-mentioned through hole electric capacity comprises the substrate surface that extends to beyond the through hole.
In an embodiment of the present invention, the material of first negative electrode layer of above-mentioned through hole electric capacity comprises that organic semiconductor, inorganic semiconductor or organic and inorganic mix (organic-inorganic hybrid) electric conducting material.Wherein, inorganic semiconductor comprises manganese dioxide (MnO
2), organic semiconductor comprises that then electric charge shifts wrong salt or conducting polymer.Aforementioned conducting polymer comprises polypyrrole (polypyrrole), polythiophene (polythiophene) or polyaniline (polyaniline).And the material of working as first negative electrode layer is the conductive polymer period of the day from 11 p.m. to 1 a.m, can be two kinds of conducting polymer composites of single conducting polymer composite or mixing.
In an embodiment of the present invention, first negative electrode layer of above-mentioned through hole electric capacity comprises sandwich construction.
In an embodiment of the present invention, second negative electrode layer of above-mentioned through hole electric capacity comprises the composite bed of carbon containing and metal, and metal wherein comprises silver, copper, gold or nickel.
In an embodiment of the present invention, second negative electrode layer of above-mentioned through hole electric capacity comprises the simple metal layer.
In an embodiment of the present invention, second negative electrode layer of above-mentioned through hole electric capacity comprises and fills up through hole.
In an embodiment of the present invention, aforesaid substrate comprises silicon substrate, organic substrate, metal substrate or insulated substrate.
In an embodiment of the present invention, the through hole in the aforesaid substrate is arrayed.
In an embodiment of the present invention, above-mentioned parallel plate capacitor comprises one deck first conductor layer at least, is positioned at one deck second dielectric layer and one deck second conductor layer on first conductor layer, and second dielectric layer is between first conductor layer and second conductor layer.Wherein, the dielectric coefficient of second dielectric layer of parallel plate capacitor is about 1～2000, thickness is about 0.1 μ m～10 μ m.
In an embodiment of the present invention, the material of second dielectric layer of above-mentioned parallel plate capacitor then is barium zirconium phthalate (barium zirconate titanate, BZT), barium strontium titanate (barium strontium titanate, BST), barium titanate (barium titanate), contain lead (Pb), niobium (Nb), tungsten (W), calcium (Ca), magnesium (Mg) and zinc (Zn) is the barium titanate of at least a element (barium titanate) wherein, lead titanates (lead titanate), lead zirconate titanate (lead zirconate titanate, PZT), polycrystalline lanthanum modification lead zirconate titanate (polycrystallinelanthanum-modified lead zirconate titanate, PLZT), lead niobate (lead niobate) and derivative thereof, and a kind of material of selecting in the group that forms of lead tungstate (lead tungstate) and derivative thereof.
In an embodiment of the present invention, above-mentioned first conductor layer or second conductor layer can be identical electric conducting material with anodal layer.
In an embodiment of the present invention, above-mentioned first conductor layer or second conductor layer can be identical electric conducting material with second negative electrode layer.
In an embodiment of the present invention, aforesaid substrate comprises metal substrate.And the part of said metal substrates can be used as first conductor layer of parallel plate capacitor; Perhaps, the part of said metal substrates can be used as the anodal layer of through hole electric capacity.
In an embodiment of the present invention, the shape of above-mentioned parallel plate capacitor comprises hexagon, circle, square or annular.
In an embodiment of the present invention, the shape of above-mentioned through hole electric capacity comprises hexagon, circle, square or annular.
The present invention is because of the through hole electric capacity and the parallel plate capacitor of the anodal layer of tool loose structure in parallel, so can obtain the composite capacitor of a big electric capacity.In addition, by the through hole electric capacity of anodal layer and the cooperating of parallel plate capacitor of tool loose structure, can design the composite capacitor of the present invention that meets demand.Therefore, composite capacitor of the present invention can provide the capacitance greater than 0.1 μ F in a die size, so that the voltage stabilizing of chip chamber to be provided, remove the High-frequency Interference of 1～4GHz simultaneously.
For above-mentioned feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is a kind of substrate stereogram of composite capacitor, according to the first embodiment of the present invention.
Fig. 2 is the generalized section of the II-II line segment of Fig. 1.
Fig. 3 is the generalized section of composite capacitor of a kind of variation of Fig. 2.
Fig. 4 is the generalized section according to a kind of composite capacitor of the second embodiment of the present invention.
Fig. 5 is the top view according to a kind of composite capacitor of the third embodiment of the present invention.
Fig. 6 is the generalized section of the VI-VI line segment of Fig. 5.
Fig. 7 is the top view of composite capacitor of a kind of variation of Fig. 5.
Fig. 8 is the impedance of composite capacitor of Fig. 7 and the simulation curve figure of frequency.
Fig. 9 A to Fig. 9 C is three kinds of variation of the 3rd embodiment.
Description of reference numerals
10,40,50: composite capacitor 100,500: substrate
102,402,502: through hole
110,410,510,710a, 710b, 710c, 910a, 910b, 910c: parallel plate capacitor
112,412: the first conductor layers 114,414: the second conductor layers
116,416: the second dielectric layers
120,420,520,720,900a, 900b, 900c: through hole electric capacity
122,422: anodal layer 124,424: the first dielectric layers
126,426: the first negative electrode layers 128,428: the second negative electrode layers
130,300: loose structure 140,440: circuit layout
142,442: projection 144,530: insulating barrier
400: metal substrate 444: insulating barrier
Embodiment
Hereinafter see also accompanying drawing and understand the present invention more fully, wherein accompanying drawing shows various embodiments of the present invention.But, also available multiple multi-form practice of the present invention, and the embodiment that it should be interpreted as being limited to hereinafter and be stated.In fact, provide these embodiment, fully convey the scope of the invention to those skilled in the art simultaneously thus just in order to make the present invention more detailedly and complete disclosed.In the drawings, for the purpose of clear and definite, the size and the relative size of each layer may be done describing of exaggeration.
Fig. 1 is a kind of substrate or the silicon intermediary layer with composite capacitor according to the first embodiment of the present invention.Fig. 2 is the generalized section of the II-II line segment of Fig. 1.
Please refer to Fig. 1 and Fig. 2, the composite capacitor 10 of first embodiment comprises a substrate 100, at least one parallel plate capacitor 110 and at least one through hole electric capacity 120, and wherein substrate 100 has several through holes 102, and parallel plate capacitor 110 then is positioned on the substrate 100.Be arranged at least one through hole 102 and in parallel as for through hole electric capacity 120 with parallel plate capacitor 110.This through hole electric capacity 120 comprises the anodal layer 122 of one deck, one deck first dielectric layer 124, one deck first negative electrode layer 126 and one deck second negative electrode layer 128 at least.In first embodiment, substrate 100 is a silicon substrate, and substrate 100 can also be organic substrate, metal substrate or insulated substrate in addition.Through hole 102 in the aforesaid substrate 100 can be selected with arrayed, and except through hole electric capacity 120 is set, also can be used as the part of circuit layout 140, for example connect power by projection 142 and export into end (Power) and signal end (Signal), through hole electric capacity 120 then is ground connection (Ground).And, though first embodiment shows circular through hole electric capacity 120, but the present invention should not be construed as limited to the given shape of being described among first embodiment, and can comprise the shape that other can be implemented, as through hole electric capacity such as hexagon, circle, square or annulars.
Please continue with reference to Fig. 2, anodal layer 122 is positioned at the inner surface of through hole 102 at least, and wherein anodal layer 122 material is aluminium (Al), tantalum (Ta), niobium (Nb) or columbium monoxide (NbO) etc. for example.And anodal layer 122 is a loose structure 130 to the inner surface that is less than through hole 102, the enlarged drawing upper right as Fig. 2.124 of first dielectric layers are positioned on the loose structure 130 of anodal layer 122; For instance, when anodal layer 122 be an aluminium lamination, and loose structure 130 is metallic aluminium structures after etching, and then 124 of first dielectric layers are loose structure 130 is formed on loose structure 130 surfaces after anodic oxidation aluminium oxide (Al
2O
3).Aforementioned loose structure 130 also can be described as " spongelike structure ".As for first negative electrode layer 126 are the surfaces that are covered in first dielectric layer 124.The material of first negative electrode layer 126 for example organic semiconductor, inorganic semiconductor or organic and inorganic mixes (organic-inorganic hybrid) electric conducting material, wherein inorganic semiconductor such as manganese dioxide (MnO
2), organic semiconductor then for example electric charge shift wrong salt or conducting polymer.And above-mentioned conducting polymer for example polypyrrole (polypyrrole), polythiophene (polythiophene), polyaniline (polyaniline) or other suitable conducting polymer.And the material of first negative electrode layer 126 also can to select be two kinds of conducting polymer composites of single conducting polymer composite or mixing.In addition, first negative electrode layer 126 can be a sandwich construction also, and is not limited to the described simple layer structure of first embodiment.
Please once again with reference to Fig. 2, the material of above-mentioned first negative electrode layer 126 is because have the self-healing effect, so in the regional ability of insulating voluntarily that has of height electric leakage, in order to reduce the electric leakage of capacity cell.128 of second negative electrode layers are to fill up above-mentioned through hole 102, and to cover first negative electrode layer, 126 surfaces, wherein the conductivity of second negative electrode layer 128 is greater than the conductivity of first negative electrode layer 126.Above-mentioned second negative electrode layer 128 comprises the composite bed of carbon containing and metal, and wherein the metal in the composite bed comprises silver, copper, gold or nickel; That is to say that the material of second negative electrode layer 128 can be C/Ag or C/Cu or C/Au.Second negative electrode layer 128 also can be the simple metal layer.Above-mentioned second negative electrode layer 128 comprises and fills up above-mentioned through hole.
Please continue with reference to Fig. 2, above-mentioned parallel plate capacitor 110 comprises one deck first conductor layer 112 at least, is positioned at one deck second conductor layer 114 and one deck second dielectric layer 116 on first conductor layer 112, second dielectric layer 116 is between first conductor layer 112 and second conductor layer 114, and wherein the capacitance of parallel plate capacitor 110 is for example below 0.1 μ F.In addition, parallel plate capacitor 110 also can be selected to be arranged on substrate 100 two-sided except the same one side that is arranged on substrate 100 with Fig. 2.Wherein, the dielectric coefficient of second dielectric layer 116 of parallel plate capacitor 110 for example is 1～2000, thickness for example is between 0.1 μ m～10 μ m.In first embodiment, the material of said second dielectric layer 116 for example is barium zirconium phthalate (barium zirconate titanate, BZT), barium strontium titanate (barium strontium titanate, BST), barium titanate (barium titanate), contain Pb, Nb, W, Ca, Mg and Zn be the barium titanate of at least a element (barium titanate) wherein, lead titanates (lead titanate), lead zirconate titanate (leadzirconate titanate, PZT), polycrystalline lanthanum modification lead zirconate titanate (polycrystallinelanthanum-modified lead zirconate titanate, PLZT), lead niobate (lead niobate) and derivative thereof, and a kind of material of selecting in the group that forms of lead tungstate (lead tungstate) and derivative thereof.
In addition, Fig. 2 describes with cross sectional illustration, and cross sectional illustration is just done it idealized illustrative, therefore may be because of design requirement and/or permission and different with the shape among the figure, so the present invention should not be construed as limited to the given shape of being described among first embodiment, but comprise the shape that other can be implemented.For example, 110 shapes of the parallel plate capacitor among Fig. 2 comprise hexagon, circle, flat shape such as square.Therefore, profile is essentially schematically, and its shape is not meaned the accurate shape of element, and not in order to limit the scope of the invention.And above-mentioned first conductor layer 112 or second conductor layer 114 can be selected to adopt and anodal layer 122 identical electric conducting material; Or select to adopt the electric conducting material identical with second negative electrode layer 128.As for then being insulating barrier 144 in substrate 100 surface coverage.
Fig. 3 then is the generalized section of composite capacitor of a kind of variation of Fig. 2, wherein use with Fig. 2 in the components identical symbol represent identical member.Please refer to Fig. 3, itself and Fig. 2 maximum difference are that the loose structure 300 of anodal layer 122 is to extend to through hole 102 substrate 100 surfaces in addition.In other words, first dielectric layer (not illustrating) that is positioned at loose structure 300 surfaces also will extend to through hole 102 substrate 100 surfaces in addition, so the through hole capacitance will be bigger.
Fig. 4 is the generalized section according to a kind of composite capacitor of the second embodiment of the present invention.
Please refer to Fig. 4, the composite capacitor 40 of second embodiment comprises a metal substrate 400, at least one parallel plate capacitor 410 and at least one through hole electric capacity 420, and wherein metal substrate 400 has several through holes 402.The part of metal substrate 400 can be used as first conductor layer 412 of parallel plate capacitor 410, second conductor layer 414 of parallel plate capacitor 410 then is positioned on second dielectric layer, 416 surfaces, and 416 of second dielectric layers are between metal substrate 400 surfaces and second conductor layer 414.Please refer to first embodiment as for second dielectric layer, 416 selectable materials.
Please continue with reference to Fig. 4, through hole electric capacity 420 is positioned at through hole 402 and in parallel with parallel plate capacitor 410.And, because second embodiment is the relation that adopts metal substrate, so the part of metal substrate 400 can be used as the anodal layer 422 of through hole electric capacity 420.And loose structure 430 is located in the inner surface of through hole 402.424 of first dielectric layers are positioned on the loose structure 430, the enlarged drawing upper right as Fig. 4.Selection about position, material and the structure of first negative electrode layer 426 and second negative electrode layer 428 all can be with reference to first embodiment, so repeat no more.In addition, because the relation of metal substrate 400 need not made through hole so connect anodal position.As for the through hole of transmission signals, then also to an insulating barrier 444 be set at through hole 402 and 440 of circuit layouts.And the through hole 402 in the metal substrate 400 also can be selected with arrayed, and through hole electric capacity 420 is the same with first embodiment, except that can be circle, also can comprise the shape that other can be implemented, as hexagon, circle, square or annular etc.In addition, 410 shapes of the parallel plate capacitor among Fig. 4 can be hexagon, circle, flat shape such as square.In addition, the part of metal substrate 400 can be used as first conductor layer and anodal layer, also can be chosen on the metal substrate 400 in addition other electric conducting materials of sputter as first conductor layer or anodal layer.
Fig. 5 is the top view according to a kind of composite capacitor of the third embodiment of the present invention.Fig. 6 is the generalized section of the VI-VI line segment of Fig. 5.
Please refer to Fig. 5 and Fig. 6, the composite capacitor 50 of the 3rd embodiment comprises a substrate 500, at least one parallel plate capacitor 510 and at least one through hole electric capacity 520, and wherein substrate 500 has through hole 502, and through hole electric capacity 520 promptly is arranged in through hole 502.The structure of above-mentioned through hole electric capacity 520 is identical with the through hole electric capacity of first embodiment, so use the component symbol of first embodiment to represent identical or similar elements.Be positioned on the substrate 500 around above-mentioned through hole electric capacity 520 as for 510 of parallel plate capacitors, and in parallel with through hole electric capacity 520.The parallel plate capacitor of the structure of above-mentioned parallel plate capacitor 510 and first embodiment is similar, so use the component symbol of first embodiment to represent identical or similar elements.And also cover a layer insulating 530 on parallel plate capacitor 510 and substrate 500 surfaces.
In the 3rd embodiment, substrate 500 can be silicon substrate, and substrate 500 can also be metal substrate, organic substrate or insulated substrate in addition.When substrate 500 was metal substrate, first conductor layer, another part that the part of substrate 500 can be used as parallel plate capacitor 510 can be used as the anodal layer of through hole electric capacity 520.
Please once again with reference to Fig. 5, parallel plate capacitor 510 among the figure and through hole electric capacity 520 are to be configured in the hexagon-shaped pattern that is arrayed.Therefore, can be according to the position and the quantity of required capacitance design parallel plate capacitor, as Fig. 7.In Fig. 7, show a composite capacitor 70 that is constituted by single through hole electric capacity 720 and three circle parallel plate capacitor 710a, 710b and 710c, and parallel plate capacitor 710a, 710b and 710c can select the electric capacity of different dielectric coefficient, and obtain the impedance (Impedance) of Fig. 8 and the simulation curve figure of frequency (Frequency).As can be seen from Figure 8, the composite capacitor of the 3rd embodiment can be according to demand, and design is all having low-impedance composite capacitor in the frequency on a large scale.
Please once again with reference to Fig. 6 and Fig. 7, when parallel plate capacitor 710a, 710b and 710c want and through hole electric capacity 720 when in parallel, except same one side parallel connection at substrate 500, also can be in the substrate 500 two-sided parallel plate capacitors that all dispose, or do interconnected parallel plate capacitor design in substrate is two-sided.In addition, the parallel plate capacitor of the 3rd embodiment and through hole electric capacity can also have other distortion, as the hexagon through hole electric capacity 900c of the squared-shaped passthrough openings electric capacity 900b of the circular through hole electric capacity 900a of Fig. 9 A and ring-like parallel plate capacitor 910a, Fig. 9 B and square frame parallel plate capacitor 910b, Fig. 9 C and the ring-like parallel plate capacitor 910c of hexagonal etc.
In addition, though all only show a through hole electric capacity in the composite capacitor of above each embodiment, but the technical staff of the technical field of the invention is after consulting above embodiment, and the quantity that should understand through hole electric capacity also can become the through hole electric capacity of mutual parallel connection according to increase in demand.
In sum, composite capacitor of the present invention can pass through the through hole electric capacity of anodal layer and the cooperating of parallel plate capacitor of tool loose structure, and designs the composite capacitor that meets demand.For instance, composite capacitor of the present invention can provide the capacitance greater than 0.1 μ F in a die size, so that the voltage stabilizing of chip chamber to be provided; And composite capacitor of the present invention can be removed the High-frequency Interference of 1～4GHz.And this composite capacitor is suitable for that (silicon interposer substratecapacitor SISC), certainly also can be arranged on the organic substrate under the IC as silicon interposer substrate electric capacity.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; those skilled in the art without departing from the spirit and scope of the present invention, when can doing a little change and retouching, so protection scope of the present invention is when looking being as the criterion that claim defines.
Claims (28)
1. composite capacitor comprises:
Substrate, this substrate has a plurality of through holes;
At least one parallel plate capacitor is positioned on this substrate; And
At least one through hole electric capacity is arranged at least one through hole and in parallel with this parallel plate capacitor, and this through hole electric capacity comprises at least:
Anodal layer is positioned at the inner surface of this through hole at least, should positive pole layer to the inner surface that is less than through hole be a loose structure wherein;
First dielectric layer is positioned on this loose structure of this positive pole layer at least;
First negative electrode layer is covered in the surface of this first dielectric layer; And
Second negative electrode layer is covered in the surface of this first negative electrode layer, and wherein the conductivity of this second negative electrode layer is greater than the conductivity of this first negative electrode layer.
2. composite capacitor comprises:
Substrate, this substrate has a plurality of through holes;
At least one through hole electric capacity is arranged at least one through hole, and this through hole electric capacity comprises at least:
Anodal layer is positioned at the inner surface of this through hole at least, should positive pole layer to the inner surface that is less than through hole be a loose structure wherein;
First dielectric layer is positioned on this loose structure of this positive pole layer at least;
First negative electrode layer is covered in the surface of this first dielectric layer; And
Second negative electrode layer is covered in the surface of this first negative electrode layer, and wherein the conductivity of this second negative electrode layer is greater than the conductivity of this first negative electrode layer; And
At least one parallel plate capacitor is positioned on this substrate around this through hole electric capacity and in parallel with this through hole electric capacity.
3. composite capacitor as claimed in claim 1 or 2, wherein the material of this positive pole layer of this through hole electric capacity comprises aluminium, tantalum, niobium or columbium monoxide.
4. composite capacitor as claimed in claim 1 or 2, wherein this first dielectric layer of this through hole electric capacity comprises this substrate surface that extends to beyond this through hole.
5. composite capacitor as claimed in claim 1 or 2, wherein the material of this first negative electrode layer of this through hole electric capacity comprises organic semiconductor, inorganic semiconductor or organic and inorganic hybrid conductive material.
6. composite capacitor as claimed in claim 5, wherein this inorganic semiconductor comprises manganese dioxide.
7. composite capacitor as claimed in claim 5, wherein this organic semiconductor comprises that electric charge shifts wrong salt or conducting polymer.
8. composite capacitor as claimed in claim 7, wherein this conducting polymer comprises polypyrrole, polythiophene or polyaniline.
9. composite capacitor as claimed in claim 7, wherein the material of this first negative electrode layer comprises two kinds of conducting polymer composites of single conducting polymer composite or mixing.
10. composite capacitor as claimed in claim 1 or 2, wherein this first negative electrode layer of this through hole electric capacity comprises sandwich construction.
11. composite capacitor as claimed in claim 1 or 2, wherein this second negative electrode layer of this through hole electric capacity comprises the composite bed of carbon containing and metal.
12. composite capacitor as claimed in claim 11, wherein the metal in this composite bed comprises silver, copper, gold or nickel.
13. composite capacitor as claimed in claim 1 or 2, wherein this second negative electrode layer of this through hole electric capacity comprises the simple metal layer.
14. composite capacitor as claimed in claim 1 or 2, wherein this second negative electrode layer of this through hole electric capacity comprises and fills up this through hole.
15. composite capacitor as claimed in claim 1 or 2, wherein this substrate comprises silicon substrate, organic substrate, metal substrate or insulated substrate.
16. composite capacitor as claimed in claim 1 or 2, wherein this through hole in this substrate is arrayed.
17. composite capacitor as claimed in claim 1 or 2, wherein this parallel plate capacitor comprises at least:
First conductor layer;
Second conductor layer is positioned on this first conductor layer; And
Second dielectric layer is between this first conductor layer and this second conductor layer.
18. composite capacitor as claimed in claim 17, wherein the dielectric coefficient of this of this parallel plate capacitor second dielectric layer is 1～2000.
19. composite capacitor as claimed in claim 17, wherein the thickness of this of this parallel plate capacitor second dielectric layer is 0.1 μ m～10 μ m.
20. composite capacitor as claimed in claim 17, wherein the material of this of this parallel plate capacitor second dielectric layer is from barium zirconium phthalate, barium strontium titanate, barium titanate, contains a kind of material of selecting in Pb, Nb, W, Ca, Mg and the Zn group that wherein barium titanate, lead titanates, lead zirconate titanate, polycrystalline lanthanum modification lead zirconate titanate, lead niobate and the derivative thereof of at least a element and lead tungstate and derivative thereof are formed.
21. composite capacitor as claimed in claim 17, wherein this first conductor layer or this second conductor layer are identical electric conducting material with this positive pole layer.
22. composite capacitor as claimed in claim 17, wherein the metal of this first conductor layer or this second conductor layer and this second negative electrode layer is identical electric conducting material.
23. composite capacitor as claimed in claim 17, wherein this substrate comprises metal substrate.
24. composite capacitor as claimed in claim 23, wherein the part of this metal substrate is as this first conductor layer of this parallel plate capacitor.
25. composite capacitor as claimed in claim 1 or 2, wherein this substrate comprises metal substrate.
26. composite capacitor as claimed in claim 25, wherein the part of this metal substrate is as this positive pole layer of this through hole electric capacity.
27. composite capacitor as claimed in claim 1 or 2, wherein the shape of this parallel plate capacitor comprises hexagon, circle, square or annular.
28. composite capacitor as claimed in claim 1 or 2, wherein the shape of this through hole electric capacity comprises hexagon, circle, square or annular.
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| CNA2007103054516A CN101471181A (en) | 2007-12-28 | 2007-12-28 | Composite capacitor |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8390984B2 (en) | 2009-06-04 | 2013-03-05 | Industrial Technology Research Institute | Capacitor substrate structure |
| CN101964254B (en) * | 2009-07-23 | 2013-04-17 | 财团法人工业技术研究院 | Capacitor substrate structure |
| CN103189945A (en) * | 2010-11-11 | 2013-07-03 | 罗伯特·博世有限公司 | Method for production of a capacitive storage element, storage element and its use |
| RU2553981C2 (en) * | 2010-04-02 | 2015-06-20 | Интел Корпорейшн | Charge accumulator, method of its manufacturing, method for manufacturing of electroconductive structure for charge accumulator, mobile electronic device using charge accumulator and microelectronic device containing charge accumulator |
| CN107591256A (en) * | 2017-07-14 | 2018-01-16 | 电子科技大学 | A kind of board-like array capacitor chip of Large Copacity gradient and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5949638A (en) * | 1997-05-02 | 1999-09-07 | Cm Components, Inc. | Multiple anode capacitor |
| US6446317B1 (en) * | 2000-03-31 | 2002-09-10 | Intel Corporation | Hybrid capacitor and method of fabrication therefor |
| JP3792129B2 (en) * | 2001-03-01 | 2006-07-05 | 新光電気工業株式会社 | Capacitor, capacitor built-in circuit board, and manufacturing method thereof |
| US6757152B2 (en) * | 2001-09-05 | 2004-06-29 | Avx Corporation | Cascade capacitor |
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2007
- 2007-12-28 CN CNA2007103054516A patent/CN101471181A/en active Pending
- 2007-12-28 CN CN201210188751.1A patent/CN102693975B/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8390984B2 (en) | 2009-06-04 | 2013-03-05 | Industrial Technology Research Institute | Capacitor substrate structure |
| CN101964254B (en) * | 2009-07-23 | 2013-04-17 | 财团法人工业技术研究院 | Capacitor substrate structure |
| RU2553981C2 (en) * | 2010-04-02 | 2015-06-20 | Интел Корпорейшн | Charge accumulator, method of its manufacturing, method for manufacturing of electroconductive structure for charge accumulator, mobile electronic device using charge accumulator and microelectronic device containing charge accumulator |
| CN103189945A (en) * | 2010-11-11 | 2013-07-03 | 罗伯特·博世有限公司 | Method for production of a capacitive storage element, storage element and its use |
| CN103189945B (en) * | 2010-11-11 | 2016-06-29 | 罗伯特·博世有限公司 | For manufacturing the method for capacitive memory component, memory component and application thereof |
| US9583263B2 (en) | 2010-11-11 | 2017-02-28 | Robert Bosch Gmbh | Method for manufacturing a capacitive storage element, storage element and its use |
| CN107591256A (en) * | 2017-07-14 | 2018-01-16 | 电子科技大学 | A kind of board-like array capacitor chip of Large Copacity gradient and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102693975A (en) | 2012-09-26 |
| CN102693975B (en) | 2015-09-16 |
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