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CN101469418B - Control method for plasma reinforced chemical meteorology deposition apparatus - Google Patents

Control method for plasma reinforced chemical meteorology deposition apparatus Download PDF

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Publication number
CN101469418B
CN101469418B CN2007101593061A CN200710159306A CN101469418B CN 101469418 B CN101469418 B CN 101469418B CN 2007101593061 A CN2007101593061 A CN 2007101593061A CN 200710159306 A CN200710159306 A CN 200710159306A CN 101469418 B CN101469418 B CN 101469418B
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China
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pressure
mechanical manipulator
valve
reaction chamber
chamber
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Expired - Fee Related
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CN101469418A (en
Inventor
于海斌
王宏
林跃
徐皑冬
周建辉
康凯
刘明哲
胡河春
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Shenyang Zhongkebo Micro Automation Technology Co ltd
Shenyang Institute of Automation of CAS
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Shenyang Zhongkebo Micro Automation Technology Co ltd
Shenyang Institute of Automation of CAS
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Publication of CN101469418A publication Critical patent/CN101469418A/en
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Abstract

The invention belongs to a control system technique, in particular to a method for controlling plasma intensified chemical vapor phase deposition equipment. The method comprises the equipment initialization control, the wafer processing flow control and the equipment exception alarming control, wherein the equipment initialization control comprises the steps of starting a power supply of the equipment, turning on an alarm monitor, and sending initialization instructions of a sheet transmitting cavity and a reaction cavity; the wafer processing flow control comprises the steps of leading in a technique formulation, and using a batch or layer formulation to perform processing initialization, water processing and processing ending control; the equipment exception alarming control realizes the monitoring of equipment exception and failure, and performs the step treatment on the equipment alarming through an exception pretreating mechanism and an alarming response processing mechanism. The invention realizes the accurate process control to the chemical vapor phase deposition, and meets the process requirement in the process of manufacturing semiconductor devices.

Description

The control method of plasma reinforced chemical meteorology deposition apparatus
Technical field
The invention belongs to the Controlling System technology, specifically a kind of control method of plasma reinforced chemical vapour deposition equipment.
Fast development along with semiconductor technology, requirement to semiconductor manufacturing facility is also more and more harsher, wherein more outstanding to the requirement of chemical vapor depsotition equipment, mainly show the aspects such as deposition uniformity, deposition thickness and deposition quality of wafer, the homogeneity of domestic 6 inches like products mostly is 4%-5% at present, membrane stress is 80-120mPa, and specific refractory power is 1.45-1.48, can not satisfy the process requirements that following semi-conductor is made.
Because chemical vapor depsotition equipment complex structure, it is then very difficult to carry out increasingly automated control, present a lot of semiconductor deposition equipment, need the ratio of personnel's participative decision making very big, its device initialize of semiconductor deposition equipment (CC-1) that takes place to produce as promise just needs the people for making a strategic decision and assigning miscellaneous one-step control instruction.In this case, personnel's mishandle behavior will frequently take place, and equipment dependability and security can't be protected, and has also brought drawback for making up supermatic semiconductor fabrication factory simultaneously.
The Controlling System of the chemical vapor depsotition equipment of present stage, the better simply warning treatment mechanism of general employing, in case equipment failure just stops whole work flow even closing control system,, so just caused unnecessary loss even some threshold value monitoring also can be like this.And the processing after reporting to the police does not almost have, and this just need be to make a lot of loaded down with trivial details processing at different warning people.
The purpose of this invention is to provide a kind of control method that can guarantee the plasma reinforced chemical vapour deposition equipment of wafer deposition uniformity in the semiconductor technology, deposition thickness and device security.
Summary of the invention
To achieve these goals, technical solution of the present invention is as follows:
Comprise device initialize control, the control of wafer work flow, unit exception controlling alarm, wherein: the device initialize controlled step is the starting outfit power supply, opens alarm monitoring, and sends the initialization directive that passes sheet chamber and reaction chamber; Wafer work flow controlled step is the introducing technology prescription, and use is criticized or layer formula is processed initialize, wafer processing and process finishing control; The unit exception controlling alarm realizes the monitoring to unit exception and fault, replys treatment mechanism by unusual pre-treatment mechanism and warning, and equipment alarm is carried out step-by-step processing;
The treatment step of unusual pre-treatment mechanism is: judge current Exception Type, if Exception Type then adds the termination alarm message to alarm queue for stopping class; If unusual, then the time-out alarm message is added to alarm queue for suspending class; If this Exception Type then adds the prompting alarm message to alarm queue for the prompting class; The treatment step that treatment mechanism is replied in warning is: 1) judge current Exception Type, if Exception Type then stops the operation of anomaly unit for stopping class; If Exception Type then suspends the operation of anomaly unit for suspending class; 2) obtain the abnormal information character string and output to screen, make judgement for the user; 3) obtain the abnormal operation sign indicating number, according to abnormal operation sign indicating number opening/closing alarm buzzer, warning beacon state is set, wait for that the user makes at this warning to reply; 4) then stop all unitary work flows for " Abort " as the user answer result; If user answer is for " Continue " then the operation that recovers alarm unit; 5) this is removed from alarm queue unusually, if alarm queue is not sky then repeats this warning and reply treatment step; Wherein being judged as under the situation of denying of step 1), step 3) and step 4) carried out next step in proper order.
Described starting outfit power supply step is: 0 second startup 24V power supply; 0.5 second startup radio frequency generators; 1 second startup well heater; Started the reaction chamber vacuum pump in 2 seconds; Started in 3 seconds and pass sheet chamber vacuum pump; 4 seconds off-response chamber vacuum pumps; Closed in 5 seconds and pass sheet chamber vacuum pump; Opened blower in 7 seconds; Closed blower in 9 seconds.
Described biography sheet chamber device initialize step is: close Ka Xiamen, mechanical manipulator returns initial point and cuts out the biography film gate, closes purge valve, backfill valve and first throttle valve; Judge that reaction chamber pressure greater than 10Torr denys,, pass the judgement that the sheet cavity pressure greater than 9Torr is denied otherwise directly enter if reaction chamber pressure greater than 10Torr then regulate the first throttle valve and make and pass the sheet chamber and reaction chamber pressure reduction remains in the 1Torr, is opened the biography film gate; If pass the sheet cavity pressure greater than 9Torr then open that the first throttle valve cuts out purge valve simultaneously and the backfill valve is evacuated down to below the 9Torr, close the biography film gate, otherwise directly close the biography film gate; Begin positioning mechanical arm then, purify simultaneously, backfill and vacuumize and pass the operation of sheet chamber, be evacuated down to 200mTorr, and wait for that the mechanical manipulator location finishes; Reaction chamber device initialize step is: the sample that resets fork, close high low radio frequency, and the gas of off-response, pressurize gas circuit is provided with heater temperature 400 degree; Judge when the reaction chamber chamber pressure and deny, when the reaction chamber chamber pressure is extracted into its pressure less than 9.5Torr greater than to be passed chambeies such as 9.5Torr Shi Ze, otherwise judges to enter and pass the judgement that the sheet cavity pressure less than 11Torr is denied greater than 9.5Torr; When passing the sheet cavity pressure less than 11Torr, wait film gate to be passed to close, open the control of second throttling valve and authorized pressure and carry out pressure-controlling, otherwise etc. to be passed cavity pressure less than 11Torr; Begin to purify, vacuumize the reaction chamber operation then; Pressure controller is set again is 50mTorr and off-response, pressurize gas circuit gas, wait for that the reaction chamber body is evacuated down to 50mTorr.
Described biography sheet chamber purifying step is: open the first throttle valve and will pass sheet chamber body and be extracted into vacuum 200mTorr, close the first throttle valve, open the backfill valve nitrogen backfill is gone into to pass sheet chamber cavity to 11Torr, close the backfill valve, this scavenging process circulates 3 times at least; Passing sheet chamber backfill step is: close purge valve, backfill valve and first vacuum valve; If current pressure and 1000mTorr sum be less than goal pressure then open the backfill valve, and wait for that current pressure and 50mTorr sum greater than goal pressure, close the backfill valve; If current pressure and 30mTorr sum, are waited for current pressure and 10mTorr sum less than goal pressure then open purge valve and greater than goal pressure, are closed purge valve, close the backfill valve again; Biography sheet chamber vacuumizes step and is: close purge valve and backfill valve, if when forward pass sheet cavity pressure less than goal pressure and 15mTorr sum then end operation, otherwise close first vacuum valve when opening first vacuum valve and waiting for current pressure less than goal pressure and 50mTorr sum.
Described reaction chamber vacuumizes step: off-response, pressurize gas circuit gas, open second vacuum valve and second throttling valve; Be provided with pressure controller pressure to 50mTorr as goal pressure, it is 30 seconds that overtime timing register is set, and waits for that reaction chamber pressure arrives goal pressure, if overtime then report an error then withdraw from, otherwise closes timing register; The reaction chamber purifying step is: searching and open the nitrogen gas circuit and the mass flowmeter flow rate is set is 5000sccm, multiple road valve (MA) of off-response gas circuit and the multiple road of pressurize gas circuit valve, open second throttling valve simultaneously, be provided with pressure controller pressure to 50mTorr as reaction chamber body vacuum tightness, when reaction chamber pressure is lower than 50mTorr, open multiple road valve of reaction gas circuit and the multiple road of pressurize gas circuit valve, use nitrogen gas backfill reaction chamber simultaneously, it is 9.5Torr that pressure controller is set; Repeat this scavenging process at least 3 times.
Described mechanical manipulator positioning step is: 1) checking transmitter, is that ON then reports an error and withdraws from as working order; 2) mobile manipulator is to the default location of specifying the card casket, carrying out mechanical manipulator transmitter work at present state when default location judges, if mechanical manipulator transmitter work at present state when default location is ON, then reduce by 1000 steps of mechanical manipulator, working order is changed to OFF; If 1000 step backs then report an error and withdraw from when front sensor is that working order is ON; 3) rise mechanical manipulator, become ON or exceeded for 10000 steps up to the working sensor state, the lifting shaft location finishes, and its mechanical manipulator lifting shaft coordinate is a current position; If wherein transmitter exceed 10000 when step working order still for OFF then report an error and withdraw from; 4) rise 2000 steps of mechanical manipulator; 5) stretching mechanical manipulator, up to transmitter OFF or exceeded for 5400 steps, stretch 60 steps of mechanical manipulator again, is working order ON stretching 60 step of mechanical manipulator back as transmitter, then reports an error and withdraws from; 6) withdrawal mechanical manipulator is ON or exceeded for 2000 steps that up to the working sensor state find to be positioned at the outward flange position that mechanical manipulator stretches the transmitter optical window on the axle, transmitter still is OFF when wherein exceeding for 2000 steps as the withdrawal mechanical manipulator, then reports an error and withdraws from; 7) continue to stretch 1500 steps of mechanical manipulator; 8) on 1500 step of stretching, extension bases, stretch mechanical manipulator again, be ON or exceeded for 6000 steps up to the working sensor state; Wherein then report an error and withdraw from still for OFF as transmitter working order when mechanical manipulator exceeded for 6000 steps; 9) regain 500 steps of mechanical manipulator; The working sensor state is ON when 10) going on foot as withdrawal mechanical manipulator 500, then reports an error and withdraws from; 11) stretch mechanical manipulator, be working order ON or exceeded for 2000 steps up to transmitter, find to be positioned at the preglabellar field position that mechanical manipulator stretches the transmitter optical window on the axle, acquisition so far is equipped with the outer edge coordinate position of the card casket of transmitter, and current sensor states working order is ON; Wherein exceeded for 2000 whens step such as the working sensor state still is OFF, then report an error and withdraw from mechanical manipulator; 12) current sensor states working order is to rise 2000 steps of mechanical manipulator under the ON situation when obtaining the outer edge coordinate position of card casket, mechanical manipulator again turns left, up to working sensor state ON or exceeded for 2000 steps, find the left position of the transmitter optical window on the mechanical manipulator turning axle; The left-hand rotation mechanical manipulator exceeded for 2000 whens step such as transmitter is OFF, then reported an error and withdrawed from; 13) rotating machine arm is to default location; 14) right-hand rotation mechanical manipulator, be ON or exceeded for 2000 steps up to the working sensor state, find the location right of the transmitter optical window on the mechanical manipulator turning axle, the left and right edges position coordinates that acquisition so far is equipped with the card casket of transmitter is (leftmost edge position coordinates+the right marginal position coordinate)/2; Working order is OFF when wherein exceeding for 2000 steps as transmitter, then reports an error and withdraws from; 15) mechanical manipulator returns initial point; Wherein:
Being positioned at the first or the 3rd position if obtain the card casket of outer edge coordinate position, should card casket coordinate be ((preglabellar field coordinate+outward flange coordinate)/2)-744 then; Being positioned at the second position if obtain the card casket of coordinate position, should card casket coordinate be ((preglabellar field coordinate+outward flange coordinate)/2)-640 then.
Described processing initialize comprises biography sheet chamber and two kinds of processing of reaction chamber initialize, wherein passes sheet chamber processing initialization step to be: close the first throttle valve, close Ka Xiamen and the mechanical manipulator that resets; If when the pressure in forward pass sheet chamber greater than 20Torr then be evacuated down to 20Torr, close and pass film gate and begin positioning mechanical arm, to pass the sheet chamber then and be extracted into body vacuum 200mTorr, be extracted into body vacuum 200mTorr step otherwise directly enter to close to pass film gate and will pass the sheet chamber; Judge passing tablet mode again, be isobaricly to pass sheet then backfill passes the sheet chamber to the vacuum tightness of the specified pressure of deposition formulation with the 100mTorr sum if pass tablet mode, waits for that the mechanical manipulator location finishes, and locatees completing steps otherwise directly enter the wait mechanical manipulator; Open the first throttle valve, open first vacuum valve and purge valve, wait to be passed cavity pressure to arrive 2.3Torr; Reaction chamber processing initialization step is: the heating plate temperature is set for the prescription assigned temperature and wait for that reaction chamber temperature arrives, judgement reaction chamber pressure less than 9.5Torr is denied, wait for then that less than 9.5Torr reaction chamber pressure is less than 9.5Torr as reaction chamber pressure, close etc. film gate to be passed, otherwise directly close the biography film gate; Carry out layer formula and handle operation; Be evacuated down to body vacuum 50mTorr again, use the pressurize gas circuit gas in the deposition formulation to carry out the backfill reaction chamber, be backfilling into the prescription specified pressure; Enter reaction gas circuit gas and do not open not judgement,, then open specified reaction road gas in the deposition formulation, open cross over valve again, make reactant gases be discharged to the vent gas treatment step if reaction gas circuit gas is not opened;
The described layer formula that carries out is handled in the operation, and layer is handled and comprised that bottom and pre-coating handle, and judges the bottom option earlier, if the bottom prescription then carries out the bottom layer treatment step, judges otherwise directly enter pre-coating option; The layer formula time is greater than 0 o'clock then carry out pre-coating and handle if precoat.
Described wafer processing steps is: mechanical manipulator will be waited to deposit wafer and take out from the card casket, the reaction chamber of when the question response chamber is idle wafer on the mechanical manipulator being packed into, the rotary sample fork makes wafer to be deposited move to the second reaction station, the wafer of deposition on the 8th reaction station moves on the mechanical manipulator simultaneously, the mechanical manipulator unloading has deposited wafer and has closed the biography film gate, reaction chamber begins depositing treatment, and mechanical manipulator will deposit wafer and put back in the card casket, takes off a slice wafer to be deposited simultaneously;
Wherein the reaction chamber deposition process step is: open second vacuum valve and close the biography film gate, be provided with and wait for cavity temperature prescription design temperature, if pressurize road gas is not opened then according to prescription the mass flowmeter flow rate is set, and open gas inlet, pressurize road valve and open the multiple road of pressurize gas circuit valve simultaneously and make pressurize gas enter reaction chamber, reaction chamber deposition pressure 2.2Torr is set and waits for that pressure arrives, if 30 seconds internal reaction cavity pressure no show specified pressures then report an error withdraw from; Reaction chamber pressure is set is prescription pressure, and wait for that chamber pressure is stable; If reaction gas circuit gas is not opened then the mass flowmeter flow rate is set, and open reaction gas circuit gas inlet valve, open cross over valve; If prescription specifies the lead time less than 0 then open the multiple road of reaction gas circuit valve, wait stand-by 0 to deduct second lead time; Waiting temperature is stable to be finished; High frequency power is set is prescription setting power and open HF switch, if the specified low frequency power of filling a prescription greater than 0 then wait for 50 milliseconds, is provided with low frequency power and opens the low frequency switch; The specified lead time is opened the multiple road of reaction gas circuit valve more than or equal to 0 then wait for second lead time if fill a prescription; Wait for the specified depositing time of prescription second; Rearmounted second time of waiting time, closing HF switch and high frequency power is set is 0 greater than 0 then the multiple road of off-response gas circuit valve is opened cross over valve simultaneously the specified rearmounted time if fill a prescription, and closing the low frequency switch and low frequency power is set is 0; Closing the low frequency switch and low frequency power is set is 0 smaller or equal to 0 then to close HF switch and high frequency power is set be 0 the specified rearmounted time if fill a prescription, and the multiple road of off-response gas circuit valve is opened cross over valve simultaneously;
Described step of taking out wafer from the card casket is: rotating machine arm falls mechanical manipulator and deducted for 5000 steps to the specified slot position to the card casket position of acquiescence; Stretch mechanical manipulator in the card casket; Rise mechanical manipulator to the specified slot position, the withdrawal mechanical manipulator; Mobile manipulator is to initial point.
Describedly be with pack into the step of reaction chamber of wafer: the forked attitude of sample for reference, if rising then report an error, withdraws from by the sample fork, open and pass film gate and rise mechanical manipulator to the reaction chamber higher position, wait film gate to be passed to open fully; Stretch mechanical manipulator to the reaction chamber position, if mechanical manipulator warm up time is greater than 0 then the wait several seconds; Rise the sample fork and fall mechanical manipulator, wait for that the sample fork rises to the reaction chamber lower position; If mechanical manipulator heat-up time is greater than 0 then start timing register, if wafer heat-up time greater than 0 then fall the sample fork and wait for the several seconds, rise the sample fork.
Described step from reaction chamber unloading wafer is: if mechanical manipulator heat-up time greater than 0 the heating of wait mechanical manipulator finish; Fall the sample fork and rise mechanical manipulator, wait for that the sample fork falls to the reaction chamber higher position; Start-up temperature is stablized timing register; The withdrawal mechanical manipulator cuts out the biography film gate and falls mechanical manipulator to origin position to origin position, waits film gate to be passed to close fully.
The described step that wafer is put into the card casket is: rotating machine arm rises mechanical manipulator to specified groove position to the card casket position of acquiescence, stretches mechanical manipulator to acquiescence card casket position, falls the relative current position of mechanical manipulator and deducts for 5000 steps, and the withdrawal mechanical manipulator stretches axle.
The control of described process finishing comprises biography sheet chamber and reaction chamber process finishing; Wherein passing sheet chamber process finishing step is: mobile manipulator is to origin position; Reaction chamber process finishing step is: the mass flowmeter flow rate that reaction gas circuit gas is set is 0, and closes inlet valve and the multiple road of reaction gas circuit valve; Clean processing by the cleaning time of calculating again; Reaction chamber is evacuated down to 50mTorr.
The described cleaning time is divided into high pressure cleaning time and low pressure cleaning time, and the calculation formula of described high pressure cleaning time is: the high pressure time of cleaning=(1.0+ over etching rate) * deposition thickness/etching rate+0.5; If high pressure cleaning is allowed to and the cleaning time greater than 0 then carry out the high pressure cleaning and handle; The calculation formula of low pressure cleaning time is: the low pressure time of cleaning=high pressure cleaning time * X+Y, wherein X is the formulation parameter cleaning factor, and Y is the cleaning increment; If low pressure cleaning is allowed to and the low pressure cleaning time greater than 0 then carry out the low pressure cleaning and handle.
Described cleaning treatment step is: off-response gas circuit gas is provided with the heating plate temperature and is cleaning prescription temperature; Close and pass film gate and be evacuated down to 50mTorr; If temperature does not reach the prescription design temperature then reports an error and withdraws from 60 seconds; Open the inlet valve of the 3rd pressurize gas circuit and the 4th pressurize gas circuit, and the mass flowmeter flow rate is set sets flow rate for prescription; Open the multiple road of pressurize gas circuit valve; Reaction chamber pressure is set is 2.2Torr and wait for that pressure arrives; High frequency power is set again and opens HF switch, wait the time to be cleaned to finish; Closing HF switch and high frequency power is set is 0; Off-response road, pressurize gas circuit gas; If be the high pressure cleaning, be 2.2Torr and when waiting for that pressure arrives in that reaction chamber pressure is set, add and open etching terminating point detector step; High frequency power being set and opening the times to be cleaned such as HF switch when finishing, add and close etching terminating point detector step.
Add under the situation of alarm queue stopping alarm message stopping class,, then stop the operation of anomaly unit if produce unusual unit and current thread belongs to same unit; Add under the situation of alarm queue at the time-out alarm message, belong to same unit if produce unusual unit and current thread, wait for that then suspending warning replys result, if response result is for stopping then stop the operation of anomaly unit, otherwise return unusual pre-treatment, proceed exception class and judge.
The present invention has following advantage:
1. the present invention is by the accurate control to chemical gas, mass flowmeter, radio frequency power and chamber pressure, effectively raise kinds of processes indexs such as deposition uniformity, thickness, membrane stress and specific refractory power, solve the needs of semiconductor technology future development, and then provide technology ensuring for the later process of semiconductor production.
2. the present invention has simplified user's operation steps by using device initialize mechanism, has improved the automatization level of semiconductor deposition equipment, avoided owing to the initialized mishandle behavior of personnel's participation device, thus the reliability and the security that have improved equipment.
3. the present invention replys treatment mechanism by unusual pre-treatment and warning, perfect depositing device Controlling System, effectively solved the loss that causes owing to unit exception, simultaneously alarm content in time can be fed back to the operator, and the operator also can control warning, has avoided unnecessary warning that current technological process is impacted.
Fig. 1 is plasma reinforced chemical vapour deposition (PECVD) device structure synoptic diagram.
Description of drawings
Fig. 2 is a plasma reinforced chemical vapour deposition equipment gas circuit synoptic diagram.
Fig. 3 is for passing sheet chamber device initialize schema.
Fig. 4 is a reaction chamber device initialize schema.
Fig. 5 is for passing sheet chamber processing initialization flowchart.
Fig. 6 is reaction chamber processing initialization flowchart.
Fig. 7 is unusual pretreatment process figure.
Fig. 8 replys processing flow chart for reporting to the police.
Below in conjunction with accompanying drawing the present invention is described in further detail.
Embodiment
Relating to equipment among the present invention is constructed as follows:
As shown in Figure 1, plasma reinforced chemical vapour deposition equipment has two cavitys, passes the transmission that sheet chamber LL is responsible for wafer; Reaction chamber RC is responsible for the wafer deposition.Two the cavity needs are harmonious, working in coordination just to reach the requirement of technic index.Wafer transfer is to finish actions such as getting sheet, film releasing by the control mechanical manipulator.Two cavitys need be operated under the low pressure environment in deposition process, guarantee the cleaning of sedimentary environment, avoid having influence on because of environmental factors the homogeneity and the cleanliness factor of wafer.
Among Fig. 1: label ROB is a mechanical manipulator; SPI is the sample fork; LL_C is for passing film gate; CS1 is a card casket; CS2 is No. two card caskets; CS3 is No. three card caskets.
As shown in Figure 2, plasma reinforced chemical vapour deposition equipment has 8 tunnel gas circuits and two radio frequency generatorss, and wherein 8 tunnel gas circuit gases are divided into two groups and are referred to as to react road gas and pressurize road gas.Reaction road gas is reactant gases, is used for the wafer film that rises; Pressurize road gas is pressurize gas, is used to keep certain reaction chamber RC operating pressure.Radio frequency source is divided into high and low frequency, is used for the plasma reaction of deposition process.
Among Fig. 2: label MFC is a mass flowmeter; AL is an inlet valve.
The notion that relates among the present invention is as follows:
1) passing sheet chamber LL, is the integral part of plasma reinforced chemical vapour deposition equipment, and mechanical manipulator and 3 card caskets are equipped with in its inside, and each card casket can be respectively charged into 25 wafer, as shown in Figure 1.In process control procedure, pass sheet chamber LL and be responsible for pack into reaction chamber RC or post-depositional wafer unloaded from reaction chamber RC of the wafer in the card casket.
2) reaction chamber RC is made up of sample fork and 8 reaction stations, as shown in Figure 1.Sample fork has lifting and spinning movement, cooperative mechanical hand wafer can be placed on that sample is stuck or the wafer that sample is stuck is taken off.In the deposition process, every wafer is divided deposition 7 times, by rotary sample fork conversion wafer deposition position, promptly deposits once respectively at 7 reaction stations, thereby further ensures deposition uniformity.First reaction station RC1 is used to load and unload wafer, does not do depositing treatment.
3) pass film gate LL_C, between reaction chamber RC and biography sheet chamber LL, as shown in Figure 1.Pass film gate LL_C and separate reaction chamber RC and pass sheet chamber LL, prevent that obnoxious flavour from entering biography sheet chamber LL.
4) backfill gas circuit comprises reaction gas circuit, pressurize gas circuit and liquid nitrogen gas circuit, as shown in Figure 2.Wherein react gas circuit gas and be used for chemical reaction, gas is backfilling among the reaction chamber RC, it is by the gas composition of 4 tunnel (the first~four reaction gas circuit A1-A4), and inlet valve of every route and a mass flowmeter MFC form; Pressurize gas circuit gas is used for pressurize gas or cleaning gas are backfilling into reaction chamber RC, and it is by 4 tunnel (the first~four pressurize gas circuit B1-B4) gas composition, and inlet valve of every route and a mass flowmeter MFC form; The liquid nitrogen gas circuit is used for that nitrogen (N2) is backfilling into biography sheet chamber LL and carries out pressurize, and related valve comprises backfill valve BF and purge valve PU.
MA: the multiple road of reaction gas circuit valve is backfilling into reaction chamber with reactant gases.
AD: reaction gas circuit cross over valve is discharged to vent gas treatment with reactant gases.
MB: the multiple road of pressurize gas circuit valve is backfilling into reaction chamber with pressurize gas.
BD: pressurize gas circuit cross over valve is discharged to vent gas treatment with pressurize gas.
BF: pass sheet chamber backfill valve, nitrogen is backfilling into fast passes the sheet chamber.
PU: pass sheet chamber purge valve, nitrogen is backfilling at a slow speed passes the sheet chamber.
5) vacuumize gas circuit: vacuumize gas circuit and comprise that reaction chamber RC vacuumizes gas circuit and biography sheet chamber LL vacuumizes gas circuit, as shown in Figure 2.Vacuumizing gas circuit directly links to each other with vent gas treatment.
GV: second vacuum valve is retracted to vent gas treatment with gas among the reaction chamber RC.
AV: first vacuum valve will pass that gas is retracted to vent gas treatment among the LL of sheet chamber.
TV1: the first throttle valve is used for control and passes sheet chamber LL pumping speed;
TV2: second throttling valve is used to control reaction chamber RC pumping speed;
The control method of plasma reinforced chemical vapour deposition equipment of the present invention.It is characterized in that: comprise device initialize control, the control of wafer work flow, unit exception controlling alarm, wherein: the device initialize controlled step is the starting outfit power supply, opens alarm monitoring, and sends the initialization directive that passes sheet chamber LL and reaction chamber RC; Wafer work flow controlled step is the introducing technology prescription, and use is criticized or layer formula is processed initialize, wafer processing and process finishing control; The unit exception controlling alarm realizes the monitoring to unit exception and fault, replys treatment mechanism by unusual pre-treatment mechanism and warning, and equipment alarm is carried out step-by-step processing.
Wherein: starting outfit power supply step is: 0 second startup 24V power supply; 0.5 second startup radio frequency generators RF; 1 second startup well heater; Started the reaction chamber vacuum pump in 2 seconds; Started in 3 seconds and pass sheet chamber vacuum pump; 4 seconds off-response chamber vacuum pumps; Closed in 5 seconds and pass sheet chamber vacuum pump; Opened blower in 7 seconds; Closed blower in 9 seconds.
Device initialize comprises biography sheet chamber LL and reaction chamber RC initialize, and two cavitys need carry out the initialization process of equipment synchronously, owing to reaction chamber RC pressure controller must could be worked below 9.5Torr, so need vacuumize by passing sheet chamber LL.
As shown in Figure 3, passing sheet chamber device initialize step is: close Ka Xiamen, mechanical manipulator returns initial point and cuts out and passes film gate LL_C, closes purge valve PU, backfill valve BF and first throttle valve TV1 (2 inches throttling valve of present embodiment); Judgement reaction chamber RC pressure greater than 10Torr is denied, if reaction chamber RC pressure is greater than 10Torr then regulate first throttle valve TV1 and make and pass sheet chamber LL and reaction chamber pressure reduction remains in the 1Torr, open and pass film gate LL_C, pass the judgement that sheet chamber LL pressure greater than 9Torr is denied otherwise directly enter; If pass sheet chamber LL pressure greater than 9Torr then open that first throttle valve TV1 closes purge valve PU simultaneously and backfill valve BF is evacuated down to below the 9Torr, close to pass film gate LL_C, pass film gate LL_C otherwise directly close; Begin positioning mechanical arm then, purify simultaneously, backfill and vacuumize and pass sheet chamber LL operation, be evacuated down to 200mTorr, and wait for that the mechanical manipulator location finishes; Reaction chamber RC device initialize step is: the sample that resets fork, close high low radio frequency, and the gas of off-response, pressurize gas circuit is provided with heater temperature 400 degree; Judge when reaction chamber RC chamber pressure and deny, when reaction chamber RC chamber pressure is extracted into its pressure less than 9.5Torr greater than to be passed chamber LL such as 9.5Torr Shi Ze, otherwise judges to enter and pass the judgement that sheet chamber LL pressure less than 11Torr is denied greater than 9.5Torr; When passing sheet chamber LL pressure less than 11Torr, wait film gate LL_C to be passed to close, open the second throttling valve TV2 (4 inches throttling valve of present embodiment), and authorized pressure control carries out pressure-controlling, otherwise etc. to be passed chamber LL pressure less than 11Torr; Begin to carry out, vacuumize reaction chamber RC operation then; Pressure controller is set again is 50mTorr and off-response, pressurize gas circuit gas, wait for that reaction chamber RC body is evacuated down to 50mTorr; Present embodiment purifies 5 times.
Passing sheet chamber purifying step is: open first throttle valve TV1 and will pass sheet chamber LL body and be extracted into vacuum 200mTorr, close first throttle valve TV1, open backfill valve BF the nitrogen backfill is gone into to pass sheet chamber LL cavity to 11Torr, close backfill valve BF, this scavenging process circulates 3 times; Passing sheet chamber LL backfill step is: close purge valve PU, the backfill valve BF and the first vacuum valve AV (present embodiment adopts 2 inches vacuum valves); If current pressure and 1000mTorr sum be less than goal pressure then open backfill valve BF, and wait for that current pressure and 50mTorr sum greater than goal pressure, close backfill valve BF; If current pressure and 30mTorr sum, are waited for current pressure and 10mTorr sum less than goal pressure then open purge valve PU and greater than goal pressure, are closed purge valve PU, close backfill valve BF again; Biography sheet chamber vacuumizes step and is: close purge valve PU and backfill valve BF, if when forward pass sheet chamber LL pressure less than goal pressure and 15mTorr sum then end operation, otherwise close the first vacuum valve AV when opening the first vacuum valve AV and waiting for current pressure less than goal pressure and 50mTorr sum;
Wherein reaction chamber vacuumizes step and is: off-response, pressurize gas circuit gas, open the second vacuum valve GV (present embodiment adopts 4 inches vacuum valves) and the second throttling valve TV2; Be provided with pressure controller pressure to 50mTorr as goal pressure, it is 30 seconds that overtime timing register is set, and waits for that reaction chamber RC pressure arrives goal pressure, if overtime then report an error then withdraw from, otherwise closes timing register; Reaction chamber RC purifying step is: searching and open the nitrogen gas circuit and mass flowmeter MFC flow rate is set is 5000sccm, multiple road valve MA of off-response gas circuit and the multiple road valve MB of pressurize gas circuit, open the second throttling valve TV2 simultaneously, be provided with pressure controller pressure to 50mTorr as reaction chamber RC body vacuum tightness, when reaction chamber RC pressure is lower than 50mTorr, open multiple road valve MA of reaction gas circuit and the multiple road valve MB of pressurize gas circuit, use nitrogen gas backfill reaction chamber RC simultaneously, it is 9.5Torr that pressure controller is set, and repeats this scavenging process at least 3 times (present embodiment purifies 4 times).
The mechanical manipulator positioning step is: 1) checking transmitter, is that ON then reports an error and withdraws from as working order; 2) mobile manipulator is to the default location of specifying the card casket, carrying out mechanical manipulator transmitter work at present state when default location judges, if mechanical manipulator transmitter work at present state when default location is ON, then reduce by 1000 steps of mechanical manipulator, working order is changed to OFF; If 1000 step backs then report an error and withdraw from when front sensor is that working order is ON; 3) rise mechanical manipulator, become ON or exceeded for 10000 steps up to the working sensor state, the lifting shaft location finishes, and its mechanical manipulator lifting shaft coordinate is a current position; If wherein transmitter exceed 10000 when step working order still for OFF then report an error and withdraw from; 4) rise 2000 steps of mechanical manipulator; 5) stretching mechanical manipulator, up to transmitter OFF or exceeded for 5400 steps, stretch 60 steps of mechanical manipulator again, is working order ON stretching 60 step of mechanical manipulator back as transmitter, then reports an error and withdraws from; 6) withdrawal mechanical manipulator is ON or exceeded for 2000 steps that up to the working sensor state find to be positioned at the outward flange position (out) that mechanical manipulator stretches the transmitter optical window on the axle, transmitter still is OFF when wherein exceeding for 2000 steps as the withdrawal mechanical manipulator, then reports an error and withdraws from; 7) continue to stretch 1500 steps of mechanical manipulator; 8) on 1500 step of stretching, extension bases, stretch mechanical manipulator again, be ON or exceeded for 6000 steps up to the working sensor state; Wherein then report an error and withdraw from still for OFF as transmitter working order when mechanical manipulator exceeded for 6000 steps; 9) regain 500 steps of mechanical manipulator; The working sensor state is ON when 10) going on foot as withdrawal mechanical manipulator 500, then reports an error and withdraws from; 11) stretch mechanical manipulator, be working order ON or exceeded for 2000 steps up to transmitter, find to be positioned at the preglabellar field position (in) that mechanical manipulator stretches the transmitter optical window on the axle, acquisition so far is equipped with the outer edge coordinate position of the card casket of transmitter, and current sensor states working order is ON; Wherein exceeded for 2000 whens step such as the working sensor state still is OFF, then report an error and withdraw from mechanical manipulator; 12) current sensor states working order is to rise 2000 steps of mechanical manipulator under the ON situation when obtaining the outer edge coordinate position of card casket, mechanical manipulator again turns left, up to working sensor state ON or exceeded for 2000 steps, find the left position of the transmitter optical window on the mechanical manipulator turning axle; The left-hand rotation mechanical manipulator exceeded for 2000 whens step such as transmitter is OFF, then reported an error and withdrawed from; 13) rotating machine arm is to default location; 14) right-hand rotation mechanical manipulator, be ON or exceeded for 2000 steps up to the working sensor state, find the location right of the transmitter optical window on the mechanical manipulator turning axle, the left and right edges position coordinates that acquisition so far is equipped with the card casket of transmitter is (leftmost edge position coordinates+the right marginal position coordinate)/2; Working order is OFF when wherein exceeding for 2000 steps as transmitter, then reports an error and withdraws from; 15) mechanical manipulator returns initial point;
Wherein: being positioned at first or three positions if obtain the card casket of outer edge coordinate position, should card casket coordinate be ((preglabellar field coordinate+outward flange coordinate)/2)-744 then; Being positioned at second position if obtain the card casket of coordinate position, should card casket coordinate be ((preglabellar field coordinate+outward flange coordinate)/2)-640 then.
The processing initialize comprises and passes sheet chamber LL and two kinds of processing of reaction chamber RC initialize, as shown in Figure 5, wherein passes sheet chamber LL processing initialization step and is: close first throttle valve TV1, close Ka Xiamen and the mechanical manipulator that resets; If when the pressure of forward pass sheet chamber LL greater than 20Torr then be evacuated down to 20Torr, close and pass film gate LL_C and begin positioning mechanical arm; Close to pass film gate LL_C and will pass sheet chamber LL and be extracted into body vacuum 200mTorr; Low pressure passes sheet then backfill passes sheet chamber LL to the vacuum tightness of the specified pressure of deposition formulation with the 100mTorr sum if pass tablet mode and be, waits for that mechanical manipulator is located to finish; Open first throttle valve TV1, open the first vacuum valve AV and purge valve PU, wait to be passed chamber LL pressure to arrive 2.3Torr.
As shown in Figure 6, the processing initialize comprises biography sheet chamber LL and two kinds of processing of reaction chamber RC initialize, wherein passes sheet chamber LL processing initialization step and is: close first throttle valve TV1, close Ka Xiamen and the mechanical manipulator that resets; If when the pressure of forward pass sheet chamber LL greater than 20Torr then be evacuated down to 20Torr, close and pass film gate LL_C and begin positioning mechanical arm, also will pass sheet chamber LL is extracted into body vacuum 200mTorr to close biography film gate LL_C, is extracted into body vacuum 200mTorr step otherwise directly enter to close to pass film gate LL_C and will pass sheet chamber LL; Judge again and pass tablet mode, if the biography tablet mode passes sheet for equipressure then backfill passes the vacuum tightness (present embodiment be 2.3Torr) of sheet chamber LL to specified pressure of deposition formulation and 100mTorr sum, finish wait mechanical manipulator location, waits for mechanical manipulator location completing steps otherwise directly enter; Open first throttle valve TV1, open the first vacuum valve AV and purge valve PU, wait to be passed chamber LL pressure to arrive 2.3Torr; Reaction chamber processing initialization step is: the heating plate temperature is set for the prescription assigned temperature and wait for that reaction chamber RC temperature arrives (present embodiment 400 degree), judgement reaction chamber RC pressure less than 9.5Torr is denied, wait for then that less than 9.5Torr reaction chamber RC pressure is less than 9.5Torr as reaction chamber RC pressure, close etc. film gate LL_C to be passed, pass film gate LL_C otherwise directly close; Carry out layer formula and handle operation; Be evacuated down to body vacuum 50mTorr again, use the pressurize gas circuit gas in the deposition formulation to carry out backfill reaction chamber RC, be backfilling into prescription specified pressure (present embodiment is 2.2Torr); Enter reaction gas circuit gas and do not open not judgement,, then open specified reaction road gas in the deposition formulation, open cross over valve AD again, make reactant gases be discharged to the vent gas treatment step if reaction gas circuit gas is not opened.
The wherein said layer formula that carries out is handled in the operation, and layer is handled and comprised that bottom and pre-coating handle, and judges the bottom option earlier, if the bottom prescription then carries out the bottom layer treatment step, judges otherwise directly enter pre-coating option; The layer formula time is greater than 0 o'clock then carry out pre-coating and handle if precoat.
The wafer processing steps is: mechanical manipulator will be waited to deposit wafer and take out from the card casket, reaction chamber RC when question response chamber RC is idle packs the wafer on the mechanical manipulator into, the rotary sample fork makes wafer to be deposited move to the second reaction station RC2, the wafer of deposition on the 8th reaction station RC8 moves on the mechanical manipulator simultaneously, the mechanical manipulator unloading has deposited wafer and has closed and passed film gate LL_C, reaction chamber RC begins depositing treatment, and mechanical manipulator will deposit wafer and put back in the card casket, takes off a slice wafer to be deposited simultaneously;
Wherein reaction chamber RC deposition process step is: open the second vacuum valve GV and close biography film gate LL_C, be provided with and wait for cavity temperature prescription design temperature, if not opening, pressurize road gas mass flowmeter MFC flow rate is set according to prescription, and open gas inlet, pressurize road valve and open the multiple road valve MB of pressurize gas circuit simultaneously and make pressurize gas enter reaction chamber RC, reaction chamber RC deposition pressure 2.2Torr is set and waits for that pressure arrives, if 30 seconds internal reaction chamber RC pressure no show specified pressures then report an error withdraw from; Reaction chamber RC pressure is set is prescription pressure, and wait for that chamber pressure is stable; If reaction gas circuit gas is not opened then mass flowmeter MFC flow rate is set, and open reaction gas circuit gas inlet valve, open cross over valve AD; If prescription specifies lead time PreA less than 0 then open the multiple road valve MA of reaction gas circuit, wait stand-by 0 to deduct lead time (0-PreA) second; Waiting temperature is stable to be finished; High frequency power is set is prescription setting power and open HF switch, if the specified low frequency power of filling a prescription greater than 0 then wait for 50 milliseconds, is provided with low frequency power and opens the low frequency switch; Specified lead time PreA opens the multiple road valve MA of reaction gas circuit more than or equal to 0 then wait for lead time PreA second if fill a prescription; Wait for the specified depositing time SDT of prescription second; Specified rearmounted time PstA is greater than 0 then the multiple road valve MA of off-response gas circuit opens cross over valve AD simultaneously if fill a prescription, and rearmounted time PstA of waiting time second, closing HF switch and high frequency power is set is 0, and closing the low frequency switch and low frequency power is set is 0; Specified rearmounted time PstA is smaller or equal to 0 then to close HF switch and high frequency power is set be 0 if fill a prescription, and closing the low frequency switch and low frequency power is set is 0, and the multiple road valve MA of off-response gas circuit opens cross over valve AD simultaneously.
Described step of taking out wafer from the card casket is: rotating machine arm falls mechanical manipulator and deducted for 5000 steps to the specified slot position to the card casket position of acquiescence; Stretch mechanical manipulator in the card casket; Rise mechanical manipulator to the specified slot position, the withdrawal mechanical manipulator; Mobile manipulator is to initial point.
Describedly be with pack into the step of reaction chamber RC of wafer: the forked attitude of sample for reference, if rising then report an error, withdraws from by the sample fork, open and pass film gate LL_C and rise mechanical manipulator to reaction chamber higher position PCH, wait film gate LL_C to be passed to open fully; Stretch mechanical manipulator to reaction chamber position PC, if mechanical manipulator warm up time is greater than 0 then the wait several seconds; Rise the sample fork and fall mechanical manipulator, wait for that the sample fork rises to reaction chamber lower position PCL; If mechanical manipulator heat-up time is greater than 0 then start timing register, if wafer heat-up time greater than 0 then fall the sample fork and wait for the several seconds, rise the sample fork.
Described step from reaction chamber RC unloading wafer is: if mechanical manipulator heat-up time greater than 0 the heating of wait mechanical manipulator finish; Fall the sample fork and rise mechanical manipulator, wait for that the sample fork falls to reaction chamber higher position PCH; Start-up temperature is stablized timing register; The withdrawal mechanical manipulator cuts out biography film gate LL_C and falls mechanical manipulator to origin position to origin position, waits film gate LL_C to be passed to close fully.
The described step that wafer is put into the card casket is: rotating machine arm rises mechanical manipulator to specified groove position to the card casket position of acquiescence, stretches mechanical manipulator to acquiescence card casket position, falls the relative current position of mechanical manipulator and deducts for 5000 steps, and the withdrawal mechanical manipulator stretches axle.
The control of process finishing comprises biography sheet chamber LL and reaction chamber RC process finishing; Wherein passing sheet chamber LL process finishing step is: mobile manipulator is to origin position; Reaction chamber RC process finishing step is: the mass flowmeter MFC flow rate that reaction gas circuit gas is set is 0, and closes inlet valve and the multiple road valve MA of reaction gas circuit; Clean processing by the cleaning time of calculating again; Reaction chamber RC is evacuated down to 50mTorr.Wherein:
The cleaning time is divided into high pressure cleaning time and low pressure cleaning time, and the calculation formula of described high pressure cleaning time is: the high pressure time of cleaning=(1.0+ over etching rate) * deposition thickness/etching rate+0.5; If high pressure cleaning is allowed to and the cleaning time greater than 0 then carry out the high pressure cleaning and handle; The calculation formula of low pressure cleaning time is: the low pressure time of cleaning=high pressure cleaning time * X+Y, wherein X is the formulation parameter cleaning factor, and Y is the cleaning increment; If low pressure cleaning is allowed to and the low pressure cleaning time greater than 0 then carry out the low pressure cleaning and handle;
Described cleaning treatment step is: off-response gas circuit gas is provided with the heating plate temperature and is cleaning prescription temperature; Close and pass film gate LL_C and be evacuated down to 50mTorr; If temperature does not reach the prescription design temperature then reports an error and withdraws from 60 seconds; Open the inlet valve of the 3rd pressurize gas circuit B3 and the 4th pressurize gas circuit B4, and mass flowmeter MFC flow rate is set sets flow rate for prescription; Open the multiple road valve MB of pressurize gas circuit; Reaction chamber RC pressure is set is 2.2Torr and wait for that pressure arrives; High frequency power is set again and opens HF switch, wait the time to be cleaned to finish; Closing HF switch and high frequency power is set is 0; Off-response road, pressurize gas circuit gas;
If be the high pressure cleaning, be 2.2Torr and when waiting for that pressure arrives in that reaction chamber RC pressure is set, add and open etching terminating point detector step; High frequency power being set and opening the times to be cleaned such as HF switch when finishing, add and close etching terminating point detector step.
As shown in Figure 7, unusual pre-treatment step is: judge current Exception Type, if Exception Type then adds the termination alarm message to alarm queue for stopping class; If unusual, then the time-out alarm message is added to alarm queue for suspending class; If this Exception Type then adds the prompting alarm message to alarm queue for the prompting class;
Add under the situation of alarm queue stopping alarm message stopping class,, then stop the operation of anomaly unit if produce unusual unit and current thread belongs to same unit; Add under the situation of alarm queue at the time-out alarm message, belong to same unit if produce unusual unit and current thread, wait for that then suspending warning replys result, if response result is for stopping (Abort) then stop the operation of anomaly unit, otherwise return unusual pre-treatment, proceed exception class and judge.
As shown in Figure 8, warning is replied treatment step and is: 1) judge current Exception Type, if Exception Type then stops the operation of anomaly unit for stopping class; If Exception Type then suspends the operation of anomaly unit for suspending class; 2) obtain the abnormal information character string and output to screen, make judgement for the user; 3) obtain the abnormal operation sign indicating number, according to abnormal operation sign indicating number opening/closing alarm buzzer, warning beacon state is set, wait for that the user makes at this warning to reply; 4) then stop all unitary work flows for " Abort " as the user answer result; If user answer is for " Continue " then the operation that recovers alarm unit; 5) this is removed from alarm queue unusually, if alarm queue is not sky then repeats this warning and reply treatment step; Wherein being judged as under the situation of denying of step 1), step 3) and step 4) carried out next step in proper order.

Claims (20)

1. the control method of a plasma reinforced chemical vapour deposition equipment, it is characterized in that: comprise device initialize control, the control of wafer work flow, unit exception controlling alarm, wherein: the device initialize controlled step is the starting outfit power supply, open alarm monitoring, and send the initialization directive that passes sheet chamber (LL) and reaction chamber (RC); Wafer work flow controlled step is the introducing technology prescription, and use is criticized or layer formula is processed initialize, wafer processing and process finishing control; The unit exception controlling alarm realizes the monitoring to unit exception and fault, replys treatment mechanism by unusual pre-treatment mechanism and warning, and equipment alarm is carried out step-by-step processing;
The treatment step of unusual pre-treatment mechanism is: judge current Exception Type, if Exception Type then adds the termination alarm message to alarm queue for stopping class; If unusual, then the time-out alarm message is added to alarm queue for suspending class; If this Exception Type then adds the prompting alarm message to alarm queue for the prompting class;
The treatment step that treatment mechanism is replied in warning is: 1) judge current Exception Type, if Exception Type then stops the operation of anomaly unit for stopping class; If Exception Type then suspends the operation of anomaly unit for suspending class; 2) obtain the abnormal information character string and output to screen, make judgement for the user; 3) obtain the abnormal operation sign indicating number, according to abnormal operation sign indicating number opening/closing alarm buzzer, warning beacon state is set, wait for that the user makes at this warning to reply; 4) then stop all unitary work flows for " Abort " as the user answer result; If user answer is for " Continue " then the operation that recovers alarm unit; 5) this is removed from alarm queue unusually, if alarm queue is not sky then repeats this warning and reply treatment step; Wherein being judged as under the situation of denying of step 1), step 3) and step 4) carried out next step in proper order.
2. according to the control method of the described plasma reinforced chemical vapour deposition equipment of claim 1, it is characterized in that: starting outfit power supply step is: 0 second startup 24V power supply; 0.5 second startup radio frequency generators (RF); 1 second startup well heater; Started the reaction chamber vacuum pump in 2 seconds; Started in 3 seconds and pass sheet chamber vacuum pump; 4 seconds off-response chamber vacuum pumps; Closed in 5 seconds and pass sheet chamber vacuum pump; Opened blower in 7 seconds; Closed blower in 9 seconds.
3. according to the control method of the described plasma reinforced chemical vapour deposition equipment of claim 1, it is characterized in that: passing sheet chamber device initialize step is: close Ka Xiamen, mechanical manipulator returns initial point and cuts out and passes film gate (LL_C), closes purge valve (PU), backfill valve (BF) and first throttle valve (TV1); Judgement reaction chamber (RC) pressure greater than 10Torr is denied, if reaction chamber (RC) pressure is greater than 10Torr then regulate first throttle valve (TV1) and make and pass sheet chamber (LL) and reaction chamber pressure reduction remains in the 1Torr, open and pass film gate (LL_C), pass the judgement that sheet chamber (LL) pressure greater than 9Torr is denied otherwise directly enter; If pass sheet chamber (LL) pressure greater than 9Torr then open that first throttle valve (TV1) cuts out purge valve (PU) simultaneously and backfill valve (BF) is evacuated down to below the 9Torr, close to pass film gate (LL_C), otherwise directly close biography film gate (LL_C); Begin positioning mechanical arm then, purify simultaneously, backfill and vacuumize and pass sheet chamber (LL) operation, be evacuated down to 200mTorr, and wait for that the mechanical manipulator location finishes; Reaction chamber (RC) device initialize step is: the sample that resets fork, close high low radio frequency, and the gas of off-response, pressurize gas circuit is provided with heater temperature 400 degree; Judge that working as reaction chamber (RC) chamber pressure greater than 9.5Torr denys, when reaction chamber (RC) chamber pressure is extracted into its pressure less than 9.5Torr greater than to be passed chambeies (LL) such as 9.5Torr Shi Ze, otherwise judges to enter and pass the judgement that sheet chamber (LL) pressure less than 11Torr is denied; When passing sheet chamber (LL) pressure less than 11Torr, wait film gate to be passed (LL_C) to close, open the control of second throttling valve (TV2) and authorized pressure and carry out pressure-controlling, otherwise etc. to be passed chamber (LL) pressure less than 11Torr; Begin to purify, vacuumize reaction chamber (RC) operation then; Pressure controller is set again is 50mTorr and off-response, pressurize gas circuit gas, wait for that reaction chamber (RC) body is evacuated down to 50mTorr.
4. according to the control method of the described plasma reinforced chemical vapour deposition equipment of claim 3, it is characterized in that: passing sheet chamber purifying step is: open first throttle valve (TV1) and will pass sheet chamber (LL) body and be extracted into vacuum 200mTorr, close first throttle valve (TV1), open backfill valve (BF) the nitrogen backfill is gone into to pass sheet chamber (LL) cavity to 11Torr, close backfill valve (BF); This scavenging process circulates 3 times at least; Passing sheet chamber (LL) backfill step is: close purge valve (PU), backfill valve (BF) and first vacuum valve (AV); If current pressure and 1000mTorr sum be less than goal pressure then open backfill valve (BF), and wait for that current pressure and 50mTorr sum greater than goal pressure, close backfill valve (BF); If current pressure and 30mTorr sum, are waited for current pressure and 10mTorr sum less than goal pressure then open purge valve (PU) and greater than goal pressure, are closed purge valve (PU), close backfill valve (BF) again; Biography sheet chamber vacuumizes step and is: close purge valve (PU) and backfill valve (BF), if when forward pass sheet chamber (LL) pressure less than goal pressure and 15mTorr sum then end operation, otherwise close first vacuum valve (AV) when opening first vacuum valve (AV) and waiting for current pressure less than goal pressure and 50mTorr sum.
5. according to the control method of the described plasma reinforced chemical vapour deposition equipment of claim 3, it is characterized in that: reaction chamber vacuumizes step and is: off-response, pressurize gas circuit gas, open second vacuum valve (GV) and second throttling valve (TV2); Be provided with pressure controller pressure to 50mTorr as goal pressure, it is 30 seconds that overtime timing register is set, and waits for that reaction chamber (RC) pressure arrives goal pressure, if overtime then report an error then withdraw from, otherwise closes timing register; Reaction chamber (RC) purifying step is: searching and open the nitrogen gas circuit and mass flowmeter (MFC) flow rate is set is 5000sccm, multiple road valve (MA) of off-response gas circuit and the multiple road valve (MB) of pressurize gas circuit, open second throttling valve (TV2) simultaneously, be provided with pressure controller pressure to 50mTorr as reaction chamber (RC) body vacuum tightness, when reaction chamber (RC) when pressure is lower than 50mTorr, open multiple road valve (MA) of reaction gas circuit and the multiple road valve (MB) of pressurize gas circuit, use nitrogen gas backfill reaction chamber (RC) simultaneously, it is 9.5Torr that pressure controller is set; Repeat this scavenging process at least 3 times.
6. according to the control method of the described plasma reinforced chemical vapour deposition equipment of claim 3, it is characterized in that: the mechanical manipulator positioning step is: 1) checking transmitter, is that ON then reports an error and withdraws from as working order; 2) mobile manipulator is to the default location of specifying the card casket, carrying out mechanical manipulator transmitter work at present state when default location judges, if mechanical manipulator transmitter work at present state when default location is ON, then reduce by 1000 steps of mechanical manipulator, working order is changed to OFF; If 1000 step backs then report an error and withdraw from when front sensor is that working order is ON; 3) rise mechanical manipulator, become ON or exceeded for 10000 steps up to the working sensor state, the lifting shaft location finishes, and its mechanical manipulator lifting shaft coordinate is a current position; If wherein transmitter exceed 10000 when step working order still for OFF then report an error and withdraw from; 4) rise 2000 steps of mechanical manipulator; 5) stretching mechanical manipulator, up to transmitter OFF or exceeded for 5400 steps, stretch 60 steps of mechanical manipulator again, is working order ON stretching 60 step of mechanical manipulator back as transmitter, then reports an error and withdraws from; 6) withdrawal mechanical manipulator is ON or exceeded for 2000 steps that up to the working sensor state find to be positioned at the outward flange position that mechanical manipulator stretches the transmitter optical window on the axle, transmitter still is OFF when wherein exceeding for 2000 steps as the withdrawal mechanical manipulator, then reports an error and withdraws from; 7) continue to stretch 1500 steps of mechanical manipulator; 8) on 1500 step of stretching, extension bases, stretch mechanical manipulator again, be ON or exceeded for 6000 steps up to the working sensor state; Wherein then report an error and withdraw from still for OFF as transmitter working order when mechanical manipulator exceeded for 6000 steps; 9) regain 500 steps of mechanical manipulator; The working sensor state is ON when 10) going on foot as withdrawal mechanical manipulator 500, then reports an error and withdraws from; 11) stretch mechanical manipulator, be working order ON or exceeded for 2000 steps up to transmitter, find to be positioned at the preglabellar field position that mechanical manipulator stretches the transmitter optical window on the axle, acquisition so far is equipped with the outer edge coordinate position of the card casket of transmitter, and current sensor states working order is ON; Wherein exceeded for 2000 whens step such as the working sensor state still is OFF, then report an error and withdraw from mechanical manipulator; 12) current sensor states working order is to rise 2000 steps of mechanical manipulator under the ON situation when obtaining the outer edge coordinate position of card casket, mechanical manipulator again turns left, up to working sensor state ON or exceeded for 2000 steps, find the left position of the transmitter optical window on the mechanical manipulator turning axle; The left-hand rotation mechanical manipulator exceeded for 2000 whens step such as transmitter is OFF, then reported an error and withdrawed from; 13) rotating machine arm is to default location; 14) right-hand rotation mechanical manipulator, be ON or exceeded for 2000 steps up to the working sensor state, find the location right of the transmitter optical window on the mechanical manipulator turning axle, the left and right edges position coordinates that acquisition so far is equipped with the card casket of transmitter is (leftmost edge position coordinates+the right marginal position coordinate)/2; Working order is OFF when wherein exceeding for 2000 steps as transmitter, then reports an error and withdraws from; 15) mechanical manipulator returns initial point.
7. according to the control method of the described plasma reinforced chemical vapour deposition equipment of claim 6, it is characterized in that: being positioned at the first or the 3rd position if obtain the card casket of outer edge coordinate position, should card casket coordinate be ((preglabellar field coordinate+outward flange coordinate)/2)-744 then; Being positioned at the second position if obtain the card casket of coordinate position, should card casket coordinate be ((preglabellar field coordinate+outward flange coordinate)/2)-640 then.
8. according to the control method of the described plasma reinforced chemical vapour deposition equipment of claim 1, it is characterized in that: the processing initialize comprises biography sheet chamber (LL) and two kinds of processing of reaction chamber (RC) initialize, wherein passing sheet chamber (LL) processing initialization step is: close first throttle valve (TV1), close Ka Xiamen and the mechanical manipulator that resets; If when the pressure in forward pass sheet chamber (LL) greater than 20Torr then be evacuated down to 20Torr, close and pass film gate (LL_C) and begin positioning mechanical arm, to pass sheet chamber (LL) then and be extracted into body vacuum 200mTorr, be extracted into body vacuum 200mTorr step otherwise directly enter to close to pass film gate (LL_C) and will pass sheet chamber (LL); Judge passing tablet mode again, be isobaricly to pass sheet then backfill passes sheet chamber (LL) to the vacuum tightness of the specified pressure of deposition formulation with the 100mTorr sum if pass tablet mode, waits for that the mechanical manipulator location finishes, and locatees completing steps otherwise directly enter the wait mechanical manipulator; Open first throttle valve (TV1), open first vacuum valve (AV) and purge valve (PU), wait to be passed chamber (LL) pressure to arrive 2.3Torr; Reaction chamber processing initialization step is: the heating plate temperature is set for the prescription assigned temperature and wait for that reaction chamber (RC) temperature arrives, judgement reaction chamber (RC) pressure less than 9.5Torr is denied, wait for then that less than 9.5Torr reaction chamber (RC) pressure is less than 9.5Torr as reaction chamber (RC) pressure, close etc. film gate to be passed (LL_C), pass film gate (LL_C) otherwise directly close; Carry out layer formula and handle operation; Be evacuated down to body vacuum 50mTorr again, use the pressurize gas circuit gas in the deposition formulation to carry out backfill reaction chamber (RC), be backfilling into the prescription specified pressure; Enter reaction gas circuit gas and do not open not judgement,, then open specified reaction road gas in the deposition formulation, open cross over valve (AD) again, make reactant gases be discharged to the vent gas treatment step if reaction gas circuit gas is not opened.
9. according to the control method of the described plasma reinforced chemical vapour deposition equipment of claim 8, it is characterized in that: the described layer formula that carries out is handled in the operation, layer is handled and is comprised bottom and pre-coating processing, judge the bottom option earlier, if bottom prescription, then carry out the bottom layer treatment step, judge otherwise directly enter pre-coating option; The layer formula time is greater than 0 o'clock then carry out pre-coating and handle if precoat.
10. according to the control method of the described plasma reinforced chemical vapour deposition equipment of claim 1, it is characterized in that: the wafer processing steps is: mechanical manipulator will be waited to deposit wafer and take out from the card casket, the reaction chamber (RC) of when question response chamber (RC) is idle wafer on the mechanical manipulator being packed into, the rotary sample fork makes wafer to be deposited move to the second reaction station (RC2), the wafer of deposition on the 8th reaction station (RC8) moves on the mechanical manipulator simultaneously, the mechanical manipulator unloading has deposited wafer and has closed and passed film gate (LL C), reaction chamber (RC) beginning depositing treatment, mechanical manipulator will deposit wafer and put back in the card casket, take off a slice wafer to be deposited simultaneously.
11. control method according to the described plasma reinforced chemical vapour deposition equipment of claim 10, it is characterized in that: wherein reaction chamber (RC) deposition process step is: open second vacuum valve (GV) and close biography film gate (LL_C), be provided with and wait for cavity temperature prescription design temperature, if not opening, pressurize road gas mass flowmeter (MFC) flow rate is set according to prescription, and open gas inlet, pressurize road valve and open the multiple road valve (MB) of pressurize gas circuit simultaneously and make pressurize gas enter reaction chamber (RC), reaction chamber (RC) deposition pressure 2.2Torr is set and waits for that pressure arrives, if 30 seconds internal reaction chamber (RC) pressure no show specified pressures then report an error withdraw from; Reaction chamber (RC) pressure is set is prescription pressure, and wait for that chamber pressure is stable; If reaction gas circuit gas is not opened then mass flowmeter (MFC) flow rate is set, and open reaction gas circuit gas inlet valve, open cross over valve (AD); If prescription specifies the lead time (PreA) less than 0 then open the multiple road valve (MA) of reaction gas circuit, wait stand-by 0 to deduct lead time (0-PreA) second; Waiting temperature is stable to be finished; High frequency power is set is prescription setting power and open HF switch, if the specified low frequency power of filling a prescription greater than 0 then wait for 50 milliseconds, is provided with low frequency power and opens the low frequency switch; Specified lead time PreA opens the multiple road valve (MA) of reaction gas circuit more than or equal to 0 then wait for lead time (PreA) second if fill a prescription; Wait for the specified depositing time of prescription (SDT) second; The specified rearmounted time (PstA) is greater than 0 then the multiple road valve (MA) of off-response gas circuit is opened cross over valve (AD) simultaneously if fill a prescription, second rearmounted time of waiting time (PstA), closing HF switch and high frequency power is set is 0, and closing the low frequency switch and low frequency power is set is 0; Closing the low frequency switch and low frequency power is set is 0 smaller or equal to 0 then to close HF switch and high frequency power is set be 0 the specified rearmounted time (PstA) if fill a prescription, and the multiple road valve (MA) of off-response gas circuit is opened cross over valve (AD) simultaneously.
12. control method according to the described plasma reinforced chemical vapour deposition equipment of claim 10, it is characterized in that: described step of taking out wafer from the card casket is: rotating machine arm falls mechanical manipulator and deducted for 5000 steps to the specified slot position to the card casket position of acquiescence; Stretch mechanical manipulator in the card casket; Rise mechanical manipulator to the specified slot position, the withdrawal mechanical manipulator; Mobile manipulator is to initial point.
13. control method according to the described plasma reinforced chemical vapour deposition equipment of claim 10, it is characterized in that: describedly be: the forked attitude of sample for reference pack into the step of reaction chamber (RC) of wafer, if rising then report an error, withdraws from by the sample fork, open biography film gate (LL_C) and rise mechanical manipulator, wait film gate to be passed (LL_C) to open fully to reaction chamber higher position (PCH); Stretch mechanical manipulator to reaction chamber position (PC), if mechanical manipulator warm up time is greater than 0 then the wait several seconds; Rise the sample fork and fall mechanical manipulator, wait for that the sample fork rises to reaction chamber lower position (PCL); If mechanical manipulator heat-up time is greater than 0 then start timing register, if wafer heat-up time greater than 0 then fall the sample fork and wait for the several seconds, rise the sample fork.
14. the control method according to the described plasma reinforced chemical vapour deposition equipment of claim 10 is characterized in that: described step from reaction chamber (RC) unloading wafer is: if mechanical manipulator heat-up time greater than 0 the heating of wait mechanical manipulator finish; Fall the sample fork and rise mechanical manipulator, wait for that the sample fork falls to reaction chamber higher position (PCH); Start-up temperature is stablized timing register; The withdrawal mechanical manipulator cuts out biography film gate (LL_C) and falls mechanical manipulator to origin position to origin position, waits film gate to be passed (LL_C) to close fully.
15. control method according to the described plasma reinforced chemical vapour deposition equipment of claim 10, it is characterized in that: the described step that wafer is put into the card casket is: rotating machine arm is to the card casket position of acquiescence, rise mechanical manipulator to specified groove position, stretch mechanical manipulator to acquiescence card casket position, fall the relative current position of mechanical manipulator and deducted for 5000 steps, the withdrawal mechanical manipulator stretches axle.
16. the control method according to the described plasma reinforced chemical vapour deposition equipment of claim 1 is characterized in that: the control of process finishing comprises biography sheet chamber (LL) and reaction chamber (RC) process finishing; Wherein passing sheet chamber (LL) process finishing step is: mobile manipulator is to origin position; Reaction chamber (RC) process finishing step is: mass flowmeter (MFC) flow rate that reaction gas circuit gas is set is 0, and closes inlet valve and the multiple road valve (MA) of reaction gas circuit; Clean processing by the cleaning time of calculating again; Reaction chamber (RC) is evacuated down to 50mTorr.
17. control method according to the described plasma reinforced chemical vapour deposition equipment of claim 16, it is characterized in that: the cleaning time is divided into high pressure cleaning time and low pressure cleaning time, and the calculation formula of described high pressure cleaning time is: the high pressure time of cleaning=(1.0+ over etching rate) * deposition thickness/etching rate+0.5; If high pressure cleaning is allowed to and the cleaning time greater than 0 then carry out the high pressure cleaning and handle; The calculation formula of low pressure cleaning time is: the low pressure time of cleaning=high pressure cleaning time * X+Y, wherein X is the formulation parameter cleaning factor, and Y is the cleaning increment; If low pressure cleaning is allowed to and the low pressure cleaning time greater than 0 then carry out the low pressure cleaning and handle.
18. the control method according to the described plasma reinforced chemical vapour deposition equipment of claim 16 is characterized in that: described cleaning treatment step is: off-response gas circuit gas is provided with the heating plate temperature and is cleaning prescription temperature; Close and pass film gate (LL_C) and be evacuated down to 50mTorr; If temperature does not reach the prescription design temperature then reports an error and withdraws from 60 seconds; Open the inlet valve of the 3rd pressurize gas circuit (B3) and the 4th pressurize gas circuit (B4), and mass flowmeter (MFC) flow rate is set sets flow rate for prescription; Open the multiple road valve (MB) of pressurize gas circuit; Reaction chamber (RC) pressure is set is 2.2Torr and wait for that pressure arrives; High frequency power is set again and opens HF switch, wait the time to be cleaned to finish; Closing HF switch and high frequency power is set is 0; Off-response road, pressurize gas circuit gas.
19. control method according to the described plasma reinforced chemical vapour deposition equipment of claim 17, it is characterized in that: if be the high pressure cleaning, in that reaction chamber (RC) pressure is set is 2.2Torr and when waiting for that pressure arrives, and adds and opens etching terminating point detector step; High frequency power being set and opening the times to be cleaned such as HF switch when finishing, add and close etching terminating point detector step.
20. control method according to the described plasma reinforced chemical vapour deposition equipment of claim 1, it is characterized in that: add under the situation of alarm queue stopping alarm message in the termination class, belong to same unit if produce unusual unit and current thread, then stop the operation of anomaly unit; Add under the situation of alarm queue at the time-out alarm message, belong to same unit if produce unusual unit and current thread, wait for that then suspending warning replys result, if response result is for stopping (Abort) then stop the operation of anomaly unit, otherwise return unusual pre-treatment, proceed exception class and judge.
CN2007101593061A 2007-12-29 2007-12-29 Control method for plasma reinforced chemical meteorology deposition apparatus Expired - Fee Related CN101469418B (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5801634A (en) * 1997-09-08 1998-09-01 Sony Corporation Signal tower controller
CN1327082A (en) * 2000-06-07 2001-12-19 中国科学院沈阳科学仪器研制中心 Computer control device for vacuum coating
CN1730722A (en) * 2005-08-03 2006-02-08 西北工业大学 Large power heat gradient chemical gas phase infiltration process system monitoring device and method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5801634A (en) * 1997-09-08 1998-09-01 Sony Corporation Signal tower controller
CN1327082A (en) * 2000-06-07 2001-12-19 中国科学院沈阳科学仪器研制中心 Computer control device for vacuum coating
CN1730722A (en) * 2005-08-03 2006-02-08 西北工业大学 Large power heat gradient chemical gas phase infiltration process system monitoring device and method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2005-307239A 2005.11.04

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