CN101457919A - Phase change heat radiation semiconductor lamp - Google Patents
Phase change heat radiation semiconductor lamp Download PDFInfo
- Publication number
- CN101457919A CN101457919A CNA2009100007635A CN200910000763A CN101457919A CN 101457919 A CN101457919 A CN 101457919A CN A2009100007635 A CNA2009100007635 A CN A2009100007635A CN 200910000763 A CN200910000763 A CN 200910000763A CN 101457919 A CN101457919 A CN 101457919A
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- China
- Prior art keywords
- led
- lamp
- liquid
- semiconductor lamp
- glass shell
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/66—Details of globes or covers forming part of the light source
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/51—Cooling arrangements using condensation or evaporation of a fluid, e.g. heat pipes
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V3/00—Globes; Bowls; Cover glasses
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides an LED-made semiconductor lamp. The main structural components of the invention comprise a glass shell with capillary attraction action on the inner wall, an LED, a liquid storage heat conducting LED installation part with capillary action, an external structural part and the like. The air-tight lamp body is filled with liquid of proper boiling point; when working, the semiconductor lamp makes use of the liquid-gas phase transformation to transfer the heat produced by the LED to the lamp glass shell to carry out heat exchange with the air so as to realize LED radiation; the constant circulation of the working solution within the lamp body in the process of liquid-gas phase transformation is finished by capillary attraction action.
Description
The present invention relates to a kind of preparation method of semiconductor lamp, this method is compared with conventional semiconductor lamp preparation method, can reduce the production cost of lamp, improves the electrical security of lamp.
Light emitting diode (hereinafter to be referred as LED) is a kind of cold light source, has the light efficiency height, and the life-span is long, and volume is little, anti-vibration, and anti-flicker, photochromic various, plurality of advantages such as regulation and control convenience, safety and environmental protection are a kind of new type electro sources.The light fixture of making the light source making of LED is exactly a semiconductor lamp.
Though LED is a cold light source, and light efficiency is higher, and caloric value is lacked than the conventional light source with constant power, and LED is the device of semi-conducting material manufacturing, bears the ability of high temperature.Therefore, make the semiconductor lamp light decay little, long service life just must guarantee that LED works under lower temperature environment.When making the high power semi-conductor lamp, the heat that LED sends is many, lower the operating temperature of LED, and special cooling measure will be arranged.
Traditional heat dissipating method is that LED is installed on the thermal conductivity good metal radiator, and the fin of radiator is exposed in the air and takes away heat with air heat exchange.San Re shortcoming has 2 in this way: 1, cost height.2, electrical security is poor.
The reason that cost is high at first is that radiator generally need use thermal conductivity good metal material to make, and such as copper, aluminium etc., these material prices are all somewhat expensive, and the volume of radiator is also big when making high-power lamp, and the metal material of use is many.Next is will have reasonable radiating effect just must be made into the surface area big heat radiating fin structure of trying one's best with the radiator that metal material is made, for the past contact of the good looking appearance that makes lamp will be processed into certain shape with radiator with the method for secondary operations.The factor of material and processing and forming causes the cost height of radiator, has increased the overall manufacturing cost of semiconductor lamp thus.
The reason of electrical security difference is because heat conduction and a pair of often contradiction of insulation when making semiconductor lamp, and the insulation processing between LED and the radiator usually can reduce heat conductivility, and is unfavorable to the LED long-term stable operation.For LED is better dispelled the heat, when making semiconductor lamp LED is closely contacted with metal heat sink, and radiator is directly exposed in the air to guarantee good heat exchange.Can obtain reasonable radiating effect though do like this, the insulation meeting between LED and the radiator is relatively weaker.Use the semiconductor lamp of mains-supplied, even internal configurations has the also impossible cocksure isolation civil power of the driving power of quarantine measures, if because the quality problems of material that driving power uses or device or owing to the reason of power supply production technology causes the electric isolating effect variation of power supply inside that the radiator of lamp and civil power are communicated, therefore, it is troubling the semiconductor lamp electrical security of external metallization radiator to be installed.If making insulation processing between LED and the radiator then can increase thermal resistance between LED and the radiator in order to solve the electrical security problem, the good general of dispelling the heat not causes the LED operating temperature to improve the LED light decay being accelerated, reduced the service life of lamp.
If can remove the metal heat sink of semiconductor lamp, just above 2 problems have fundamentally been solved.
Semiconductor lamp is when making, in order to make the light source dustproof and waterproof and to prevent the lamp electric leakage, all need to use a glass shell that the Lights section is closed, this glass shell has bigger surface area and is exposed in the air, dissipate if can move to the heat that LED sends just can take heat in the air on the glass shell, so just do not need special metal heat sink, both reduced the production cost of lamp, guaranteed the electrical security of lamp again.
The present invention proposes a kind of heat that LED in the semiconductor lamp is sent to move to the method for dispelling the heat on the glass shell of lamp, thereby the metal heat sink of cancellation semiconductor lamp reduces the production cost of lamp and the electrical security of raising lamp.The basic skills that realizes this conception is to utilize the liquid of material/vapour phase to become the transfer of heat that LED is produced to realize natural heat dissipation to the glass shell of lamp.
Liquid will absorb a large amount of heats of vaporization when boiling, and the heat that the liquid continuation heating liquid that seethes with excitement is absorbed will all be used for the vaporization of liquid, and the temperature of liquid remains on the boiling point constant.Utilize this characteristics, if with LED by insulation measures be installed in can absorb and the heat carrier of storage of liquids on, be full of on the heat carrier glass is had immersional wetting and has the liquid of the suitable boiling point of electrical insulating property, heat carrier links to each other with the glass lamp housing that inwall has capillary properties, the heat that LED produces during semiconductor lamp work will raise the temperature of liquid by heating liquid, liquid boiling when the temperature of liquid reaches boiling point, the liquid of boiling constantly absorbs the heat vaporization that LED produces by the liquid storage heat carrier, the temperature of liquid storage heat carrier is constant on the boiling point of liquid, thereby defines the maximum operating temperature of LED.The gas that vaporizing liquid produces is diffused into that cooling forms liquid again on the glass shell of semiconductor lamp, the glass shell inwall of lamp is made into striped or the loose structure with capillary properties, the effect of the condensate liquid that gas cooling forms by glass shell inwall capillary attraction returns on the liquid storage heat carrier that LED is housed finishes liquid/vapour cycle, like this, the liquid that the heat that LED produces just can constantly be vaporized takes on the glass shell of lamp and leaves, and the temperature of LED is limited on the boiling point of liquid.
Accompanying drawing is the semiconductor lamp schematic diagram of the screw socket structure of a kind of usefulness method making of the present invention, and critical piece is:
1, inwall is the glass shell of capillary structure,
2、LED，
3, liquid storage thermally conductive LED installed part (be used to install LED and store working solution)
4, external structure part
5, LED lead-in wire
6, driving power
7, city's electrical lead
8, screw socket
Semiconductor lamp shown in the drawings:
Glass shell 1 and external structure part 4 will be installed in device and the hydraulic fluid and the outside seal isolation of lamp body inside.Civil power is transported on the driving power 6 through city's electrical lead 7 by screw socket 8, the civil power of 6 pairs of inputs of driving power is made power conversion output galvanic current stream, and DC current flows to by LED lead-in wire 5 and is installed in the LED 2 on the liquid storage thermally conductive LED installed part 3 and drives its work.The heat that produces during LED 2 work sends liquid to by liquid storage thermally conductive LED installed part 3, the heat that liquid absorbs LED heats up, liquid evaporation gasification when the temperature of liquid does not reach boiling point, liquid boiling vaporization when reaching boiling point, gas diffusion arrives on the glass shell 1 again, and condensation becomes liquid, the liquid of condensation is back on the liquid storage thermally conductive LED installed part 3 by the capillary structure of glass shell 1 inwall, and the heat that is sent on the glass shell is taken away by outside air convection.Thereby finish liquid/vapour cycle and heat exchange, the maximum temperature of LED maintains on the boiling point of liquid substantially.
One of characteristic of liquid boiling is that boiling point reduces along with the reduction of ambient pressure.Therefore, the lamp chamber that is filled with particular fluid is vacuumized, the boiling point of liquid will reduce in the lamp body.Utilize this characteristic, just can select for use boiling point under the normal pressure to be higher than less expensive liquid that LED the allows junction temperature liquid (such as water) of working, when producing semiconductor lamp the lamp chamber being vacuumized makes the lamp chamber keep certain vacuum when the normal temperature, thereby the boiling point of liquid is reduced to desired value assurance LED steady operation, further reduces the production cost of lamp.
Utilize the LED lamp of this principle work can also be made into other versions such as cast.
As long as application the present invention makes semiconductor lamp the power of reasonable configuration lamp and the ratio of glass shell surface area, just can guarantee under the situation of not using metal heat sink that LED has good heat radiation, thereby produce long service life with lower cost, the semiconductor lamp that electrical security is good.
Claims (3)
1, a kind of semiconductor lamp made from LED, main structural components is: inwall has the glass shell, LED, liquid storage thermally conductive LED installed part, external structure part of capillary structure etc.It is characterized in that: charge into the liquid of suitable boiling point in the airtight lamp chamber, semiconductor lamp when work, utilize liquid/vapour phase of material to become on the glass shell that the heat that LED is produced moves to lamp and leave, utilize the effect of the capillary attraction circulation of liquid in lamp body of finishing the work.
2, semiconductor lamp as claimed in claim 1 is characterized in that the inwall of glass shell and the structure that liquid storage thermally conductive LED installed part has capillary properties, such as the various structures that can produce capillary attraction to the glass wetting liquid such as striped, micropore.
3, semiconductor lamp as claimed in claim 1, the cheap liquid that it is characterized in that using boiling point under the normal pressure to be higher than the LED maximum allowable junction temperature liquid (such as water) of working, when semiconductor lamp is produced the lamp chamber is vacuumized the air pressure in the lamp chamber when reducing normal temperature, thereby the boiling point that reduces the lamp intracavity liquid makes it to reach desired value, guarantees the LED steady operation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100007635A CN101457919A (en) | 2009-01-12 | 2009-01-12 | Phase change heat radiation semiconductor lamp |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100007635A CN101457919A (en) | 2009-01-12 | 2009-01-12 | Phase change heat radiation semiconductor lamp |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101457919A true CN101457919A (en) | 2009-06-17 |
Family
ID=40768934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2009100007635A Pending CN101457919A (en) | 2009-01-12 | 2009-01-12 | Phase change heat radiation semiconductor lamp |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101457919A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101799150A (en) * | 2010-02-10 | 2010-08-11 | 中国科学院广州能源研究所 | LED lamp body type heat pipe radiating system |
| CN102155729A (en) * | 2011-04-28 | 2011-08-17 | 华南理工大学 | Heat dissipation method of LED (light-emitting diode) device and device |
| WO2011139178A1 (en) * | 2010-05-04 | 2011-11-10 | Valyentsov Mikhail Jur Yevich | Method for manufacturing a light-emitting diode lamp |
| WO2011139179A1 (en) * | 2010-05-04 | 2011-11-10 | Valyentsov Mikhail Jur Yevich | Light-emitting diode lamp |
| CN102278726A (en) * | 2010-06-12 | 2011-12-14 | 艾迪光电（杭州）有限公司 | LED lamp heat-radiating device |
| CN102588791A (en) * | 2012-02-27 | 2012-07-18 | 中国科学院广州能源研究所 | Cavity type structure heat-radiating LED (light-emitting diode) lamp adopting phase change heat transfer |
| CN102734774A (en) * | 2012-06-12 | 2012-10-17 | 郑州光华灯具有限公司 | Light emitting diode (LED) street lamp radiator |
| CN102792096A (en) * | 2010-02-08 | 2012-11-21 | 欧勒·K·尼尔森 | Steam-cooled lamp |
| CN103322460A (en) * | 2013-07-17 | 2013-09-25 | 乐健科技（珠海）有限公司 | Novel LED candle lamp and LED light source module |
| CN103388767A (en) * | 2013-07-17 | 2013-11-13 | 乐健科技（珠海）有限公司 | Novel LED (light-emitting diode) bulb lamp |
| CN105020608A (en) * | 2011-06-29 | 2015-11-04 | 罗姆股份有限公司 | LED lightbulb |
| CN105736972A (en) * | 2014-12-24 | 2016-07-06 | 通用电气照明解决方案有限责任公司 | Lamp With Led Chips Cooled By A Phase Transformation Loop |
-
2009
- 2009-01-12 CN CNA2009100007635A patent/CN101457919A/en active Pending
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2534419A4 (en) * | 2010-02-08 | 2013-08-07 | Nilssen Ole K | Evaporation cooled lamp |
| EP2534419A2 (en) * | 2010-02-08 | 2012-12-19 | Nilssen, Ole K. | Evaporation cooled lamp |
| CN102792096A (en) * | 2010-02-08 | 2012-11-21 | 欧勒·K·尼尔森 | Steam-cooled lamp |
| CN101799150A (en) * | 2010-02-10 | 2010-08-11 | 中国科学院广州能源研究所 | LED lamp body type heat pipe radiating system |
| WO2011139179A1 (en) * | 2010-05-04 | 2011-11-10 | Valyentsov Mikhail Jur Yevich | Light-emitting diode lamp |
| RU2444677C2 (en) * | 2010-05-04 | 2012-03-10 | Михаил Юрьевич Валенцов | Method of making light-emitting diode lamp |
| CN102713427A (en) * | 2010-05-04 | 2012-10-03 | 上海优利贸易有限公司 | Method for manufacturing a light-emitting diode lamp |
| WO2011139178A1 (en) * | 2010-05-04 | 2011-11-10 | Valyentsov Mikhail Jur Yevich | Method for manufacturing a light-emitting diode lamp |
| CN102278726A (en) * | 2010-06-12 | 2011-12-14 | 艾迪光电（杭州）有限公司 | LED lamp heat-radiating device |
| CN102278726B (en) * | 2010-06-12 | 2014-09-03 | 浙江思朗照明有限公司 | LED lamp heat-radiating device |
| CN102155729A (en) * | 2011-04-28 | 2011-08-17 | 华南理工大学 | Heat dissipation method of LED (light-emitting diode) device and device |
| CN105020608A (en) * | 2011-06-29 | 2015-11-04 | 罗姆股份有限公司 | LED lightbulb |
| CN102588791A (en) * | 2012-02-27 | 2012-07-18 | 中国科学院广州能源研究所 | Cavity type structure heat-radiating LED (light-emitting diode) lamp adopting phase change heat transfer |
| CN102734774A (en) * | 2012-06-12 | 2012-10-17 | 郑州光华灯具有限公司 | Light emitting diode (LED) street lamp radiator |
| CN103388767A (en) * | 2013-07-17 | 2013-11-13 | 乐健科技（珠海）有限公司 | Novel LED (light-emitting diode) bulb lamp |
| CN103388767B (en) * | 2013-07-17 | 2015-08-12 | 乐健科技（珠海）有限公司 | A kind of Novel LED bulb lamp |
| CN103322460A (en) * | 2013-07-17 | 2013-09-25 | 乐健科技（珠海）有限公司 | Novel LED candle lamp and LED light source module |
| CN105736972A (en) * | 2014-12-24 | 2016-07-06 | 通用电气照明解决方案有限责任公司 | Lamp With Led Chips Cooled By A Phase Transformation Loop |
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| DD01 | Delivery of document by public notice |
Addressee: Feng Xusheng Document name: Notification of Patent Invention Entering into Substantive Examination Stage |
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| DD01 | Delivery of document by public notice |
Addressee: Feng Xusheng Document name: the First Notification of an Office Action |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20090617 |