CN101419092A - Pyroelectric infrared detector for planarization thermal isolation structure and method for making same - Google Patents
Pyroelectric infrared detector for planarization thermal isolation structure and method for making same Download PDFInfo
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- CN101419092A CN101419092A CNA2008100798660A CN200810079866A CN101419092A CN 101419092 A CN101419092 A CN 101419092A CN A2008100798660 A CNA2008100798660 A CN A2008100798660A CN 200810079866 A CN200810079866 A CN 200810079866A CN 101419092 A CN101419092 A CN 101419092A
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- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000002955 isolation Methods 0.000 title claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 93
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 19
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 15
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 14
- 239000010980 sapphire Substances 0.000 claims abstract description 14
- 238000002360 preparation method Methods 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000012545 processing Methods 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims description 13
- 238000009413 insulation Methods 0.000 claims description 13
- 238000005516 engineering process Methods 0.000 claims description 12
- 238000001459 lithography Methods 0.000 claims description 7
- 238000009616 inductively coupled plasma Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- 238000001947 vapour-phase growth Methods 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims 1
- 238000003980 solgel method Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 229910021426 porous silicon Inorganic materials 0.000 abstract 2
- 230000002349 favourable effect Effects 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000002161 passivation Methods 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical class CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
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Abstract
The invention discloses a pyroelectric infrared detector provided with a planarized heat-insulated structure and a preparation method thereof. The pyroelectric infrared detector comprises a substrate and the heat-insulated structure, wherein the heat-insulated structure is as follows: a deep notch of a corresponding figure of a lower electrode of a detector is etched on the silicon or sapphire substrate; a porous silicon dioxide layer is deposited inside the deep notch; and silicon dioxide layers or silicon nitride layers are deposited on the porous silicon dioxide layer and the substrate. The detector is easy to be integrated with other devices by means of single scale intergration, is favorable for high-density integration of detector units, has simple manufacturing technique and low processing cost, simultaneously greatly reduces the vertical height difference of steps of a mesa device structure, is easy to interconnect metals, reduces the difficulty of the processing technique of devices and the surface leakage current of the devices, improves the performance and the finished product rate of the pyroelectric infrared detector, and obviously improves the reliability of the devices. The detector provided with the structure is suitable for infrared-ultraviolet dual-range single scale intergration and manufacture of the infrared detector and a CMOS ROIC one chip integrated focal plane device.
Description
Technical field
The invention belongs to the photo-detector technical field, pyroelectric infrared detector of especially a kind of planarization thermal isolation structure and preparation method thereof.
Background technology
Pyroelectric infrared detector is because of its price is low, in light weight, response speed is fast, spectral responsivity is wide, working and room temperature need not freeze, be easy to thermal imaging, ratio of performance to price advantages of higher, be widely used in fields such as industry, environment, medical treatment, military affairs, become one of focus of current infrared technique area research.The key factor that influences the pyroelectric infrared detector performance has two: the one, and the performance of ferroelectric thin-flim materials, another factor are the structures of detector cells; When area one timing of detector, improve responsiveness and just must reduce detector thermal conductance, raising device thermal capacitance, so the design of detector cells thermal insulation structure is the key factor of making high performance device.The pyroelectric infrared detector thermal insulation structure of having reported mainly contains 3 kinds of forms: compound membrane type mesa structure, air-gap structure and micro-bridge structure.First kind is porous SiO
2/ SiO
2Compound membrane type mesa structure, this structure is simpler, but high step influences problems such as passivation and metallization interconnect, thereby has increased technology difficulty and device surface leakage current, and to be difficult for monolithic integrated with other devices, and processing compatibility is poor; Air-gap and micro-bridge structure, these two kinds of structural heat-insulations are effective, but complex manufacturing technology has increased cost, and yield rate is low.
Summary of the invention
The technical problem to be solved in the present invention provides that a kind of manufacture craft is simple, cost is low, yield rate is high, easily and the pyroelectric infrared detector of the single chip integrated planarization thermal isolation structure of other devices and preparation method thereof.
For solving the problems of the technologies described above, the present invention includes substrate and thermal insulation structure, described thermal insulation structure is the deep trouth that is etched with the corresponding figure of detector bottom electrode on silicon or Sapphire Substrate, in deep trouth, deposit porous silica layer, on porous silica layer and substrate, be deposited with silicon dioxide layer or silicon nitride layer.
Preparation method of the present invention makes the corresponding figure of detector bottom electrode by lithography on silicon or Sapphire Substrate, utilize reactive ion (RIE, Reactive ion etch) etching or inductively coupled plasma (ICP, Inductivecouple plasma) etching forms deep trouth, the deposition porous silica layer is as thermofin in deep trouth, etching away porous silica by the reactive ion large tracts of land makes itself and substrate epitaxial laminar surface form same plane, deposit silicon dioxide or silicon nitride are modified porous silica surface and substrate epitaxial laminar surface again, finish the making of pyroelectric infrared detector on thermal insulation structure with the semiconductor fine processing technology.
The concrete thinking of the present invention is (if integrated with other photoelectric device monolithics at silicon (Si) or Sapphire Substrate, need the material epitaxy layer structure of this photoelectric device of extension on Sapphire Substrate, concrete structure is relevant with requirement on devices before) on make the bigger slightly figure of ratio detection device bottom electrode by lithography; Shelter with thick photoresist, utilize RIE or ICP etching to form deep trouth, remove photoresist, make porous silica layer as thermofin with sol-gal process, by RIE large tracts of land etching porous silica, porous silica around detector bottom electrode figure is etched totally, promptly expose detector bottom electrode figure material epitaxy laminar surface on every side, deposit silicon dioxide or silicon nitride are modified the porous silica surface again, form the porous silica thermofin of buried type complanation structure, finish the making of pyroelectric infrared detector then with the semiconductor fine processing technology.
Adopt the beneficial effect that technique scheme produced to be: the present invention has realized a kind of and the pyroelectric infrared detector planarization thermal isolation structure semiconductor fabrication process compatibility, the detector of this structure is easy to other device monolithics integrated, the high density that helps detector cells is integrated, and manufacture craft is simple, and processing cost is low; Greatly reduced simultaneously the step vertical drop of mesa devices structure, be easy to metal interconnected, thereby reduce the device manufacturing process difficulty, reduce the device surface leakage current; Realization of the present invention has improved pyroelectric infrared detector performance and yield rate, the reliability of device also be improved significantly.The present invention be applicable to pyroelectric infrared detector, infrared-the ultraviolet dual wave-band monolithic is integrated, the making of infrared eye and CMOS ROIC (Lowpressure chemical vapor deposition) the integrated focal plane device of monolithic.
Description of drawings
The present invention is further detailed explanation below in conjunction with the drawings and specific embodiments.
Fig. 1 is a structural representation of the present invention;
Fig. 2 a-2h is a technological process synoptic diagram of the present invention.
Each Reference numeral is represented in the accompanying drawing: epitaxial loayer, 104-SiO on 101-silicon (Si) or Sapphire Substrate, 102-porous silica, 103-silicon (Si) or the Sapphire Substrate
2Or Si
3N
4Decorative layer, 105-bottom electrode pattern electrodes, 106-BST ferroelectric thin film, 107-top electrode pattern electrodes, 108-Si
3N
4Passivation layer, 109-infrared eye top electrode, 110-infrared eye bottom electrode
Embodiment
As shown in Figure 1, the pyroelectric infrared detector of this planarization thermal isolation structure comprises substrate and thermal insulation structure, and described substrate is silicon (Si) or Sapphire Substrate 101.The pyroelectric infrared detector of this planarization thermal isolation structure is the deep trouth that is etched with the corresponding figure of detector bottom electrode on silicon or Sapphire Substrate 101, in deep trouth, deposit porous silica layer 102, on porous silica layer 102 and substrate epitaxial layer 103, be deposited with silicon dioxide layer or silicon nitride layer 104.As shown in Figure 1, on thermal insulation structure, be provided with bottom electrode pattern electrodes 105, BST ferroelectric thin film 106, top electrode pattern electrodes 107, Si3N4 passivation layer 108, infrared eye top electrode 109 and infrared eye bottom electrode 110.
The pyroelectric infrared detector of this planarization thermal isolation structure adopts following preparation method:
1, pre-service before silicon (Si) or Sapphire Substrate 101 photoetching: use trichloroethanes, acetone, isopropyl alcohol cleans substrate 101; If Sapphire Substrate again with the natural oxidizing layer on HCL:H2O removal substrate 101 or the epitaxial loayer 103, is removed the moisture of substrate then under 200 ℃/30min condition, clean with plasma apparatus more in case of necessity;
If this detector is integrated with other device monolithics, needing before the pre-service on sapphire or silicon substrate 101 by metal organic chemical vapor deposition (MOCVD, Metal organic chemical vapordeposition) or molecular beam epitaxy technique (MBE, Molecular beam epitaxy) grown epitaxial layer 103 (concrete material parameter is relevant with other monolithic integrated devices), shown in Fig. 2 a.
2, apply photoresist on the epitaxial loayer 103 on pretreated substrate 101 or the substrate, the glue type is SPR2204.5, rotating speed: 3000～6000r/min, and the hot plate post bake: 90 ℃/90s, shown in Fig. 2 b.
3, by exposure, develop, the back baking, plasma is swept photoetching process such as glue and produce detector bottom electrode graph of a correspondence on photoresist, shown in Fig. 2 c.
4, utilize SPR220 4.5 photoresists to shelter,, make it to form deep trouth by RIE or ICP etching epitaxial loayer 103, substrate 101, groove depth is 3～6 microns, after etching finishes, removes photoresist with acetone, wherein etchant gas is relevant with substrate type with the etching process parameter, shown in Fig. 2 d.
5, make porous silica with sol-gal process,, select the rotational speed between 3000～6000r/min to apply porous silica 102 according to the degree of depth of concrete groove, if groove is darker, when one time deficiency is filled and led up, repeat this technology, fill and lead up groove until porous silica; Shown in Fig. 2 e.
6, utilize RIE equipment large tracts of land to etch away unnecessary porous silica 102 to epitaxial loayer 103 surfaces, when the porous silica on 103 surfaces corrodes when clean, then form porous silica 102 and epitaxial loayer 103 surfaces in the groove on same surface level, shown in Fig. 2 f.Etching gas is: carbon tetrafluoride or fluoroform, power are 100W, and concrete etching time is relevant with porous silica 102 thickness above the epitaxial loayer 103.
7, utilize plasma-reinforced chemical vapor deposition (PECVD, Plasma enhanced chemical vapordeposition) or low-pressure chemical vapor phase deposition (LPCVD, Low pressure chemical vapordeposition) deposit silicon dioxide or silicon nitride 104 modification porous silicas 102 surfaces on porous silica 102 and epitaxial loayer 103 surfaces, thickness is 180nm～220nm; So far, the planarization thermal isolation structure of infrared eye forms, shown in Fig. 2 g
8, adopt semiconductor technology on the porous silica 102 of planarization thermal isolation structure and SiO2 or Si3N4 decorative layer 104, to make pyroelectric infrared detector, manufacturing process is: the bottom electrode figure that makes detector on the porous silica 102 of the thermal insulation structure of complanation and Si02 or Si3N4 decorative layer 104 by lithography, electron beam evaporation Ti/Pt forms bottom electrode pattern electrodes 105 by stripping technology then; With magnetic control sputtering system deposit Ba0.65Sr0.35TiO3 (BST) ferroelectric thin film on bottom electrode figure 105 and SiO2 or Si3N4 decorative layer 104 surfaces; At bottom electrode pattern electrodes 105 with make the top electrode figure of detector above the BST ferroelectric thin film 106 by lithography, as the top electrode contacting metal, utilize stripping technology to form top electrode pattern electrodes 107 by sputter thin layer Ni/Cr; Table top to infrared eye top electrode 107 carries out figure protection photoetching then, photoresist is AZ1500, corrodes unnecessary BST to SiO2 or Si3N4 decorative layer 104 surface and bottom electrode pattern electrodes 105 (the part bottom electrode metal that exposes) surfaces with the HF:H2O corrosive liquid; Utilize PECVD on SiO2 or Si3N4 decorative layer 104, bottom electrode pattern electrodes 105 and top electrode pattern electrodes 107 (part of exposing) surface deposit 500nm silicon nitride as passivation layer; Make the detector top electrode by lithography and need the bottom electrode graphical window of extension, erode the thick silicon nitride of 500nm in the graphical window, remove photoresist by RIE; At top electrode pattern electrodes 107 and Si3N4 passivation layer 108 surfaces and graphical window sputtered with Ti/Au, an electrode during as plating; On Si3N4 passivation layer 108 surfaces, make the upper and lower electrode pattern of detector by lithography, produce the top electrode 109 and the bottom electrode 110 of detector by electroplating technology, so far, the pyroelectric infrared detector of this planarization thermal isolation structure completes, shown in Fig. 2 h.
Claims (7)
1, a kind of pyroelectric infrared detector of planarization thermal isolation structure, it comprises substrate and thermal insulation structure, it is characterized in that described thermal insulation structure is the deep trouth that is etched with the corresponding figure of detector bottom electrode on silicon or Sapphire Substrate, in deep trouth, deposit porous silica layer, on porous silica layer and substrate, be deposited with silicon dioxide layer or silicon nitride layer.
2, the preparation method of the pyroelectric infrared detector of planarization thermal isolation structure according to claim 1, it is characterized in that on silicon or Sapphire Substrate, making by lithography the corresponding figure of detector bottom electrode, corresponding pattern etching is formed deep trouth, the deposition porous silica layer is as thermofin in deep trouth, etching away porous silica makes itself and substrate epitaxial laminar surface form same plane, deposit silicon dioxide or silicon nitride are modified porous silica surface and substrate epitaxial laminar surface again, finish the making of pyroelectric infrared detector at last on thermal insulation structure.
3, the preparation method of the pyroelectric infrared detector of planarization thermal isolation structure according to claim 2 is characterized in that describedly being to utilize the corresponding figure of reactive ion or inductively coupled plasma etching to be etched into deep trouth, 3～6 microns of groove depths.
4, the preparation method of the pyroelectric infrared detector of planarization thermal isolation structure according to claim 2, it is characterized in that described porous silica is by the making of gel sol gel process, according to the degree of depth of concrete deep trouth, select corresponding rotational speed in deep trouth, to apply porous silica.
5, the preparation method of the pyroelectric infrared detector of planarization thermal isolation structure according to claim 2 is characterized in that making itself and substrate epitaxial laminar surface form same plane by the reactive ion etching porous silica.
6, the preparation method of the pyroelectric infrared detector of planarization thermal isolation structure according to claim 2, it is characterized in that adopting plasma-reinforced chemical vapor deposition method or low-pressure chemical vapor phase deposition method deposit silicon dioxide or silicon nitride to modify the porous silica surface, deposition thickness is 180nm～220nm.
7, according to the preparation method of the pyroelectric infrared detector of described any one planarization thermal isolation structure of claim 2-6, it is characterized in that on thermal insulation structure, finishing the making of pyroelectric infrared detector with the semiconductor fine processing technology.
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Cited By (8)
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| CN102820421A (en) * | 2012-08-15 | 2012-12-12 | 电子科技大学 | Preparation method of pyroelectric thick film detector with silicon cup groove structure |
| CN102842530A (en) * | 2012-08-15 | 2012-12-26 | 电子科技大学 | Thick film material electronic component and preparation method thereof |
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| CN104176699A (en) * | 2014-07-18 | 2014-12-03 | 苏州能斯达电子科技有限公司 | MEMS (micro electro mechanical system) silica-based micro-hotplate provided with thermal insulation channels and processing method of MEMS silica-based micro-hotplate |
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|---|---|---|---|---|
| CN100374832C (en) * | 2005-05-20 | 2008-03-12 | 中国科学院上海技术物理研究所 | Absorbed layer of room-temp. ferroelectric film infrared focal plane probe and preparation method |
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2008
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| US8802990B2 (en) | 2009-06-22 | 2014-08-12 | International Business Machines Corporation | Self-aligned nano-scale device with parallel plate electrodes |
| CN102820421A (en) * | 2012-08-15 | 2012-12-12 | 电子科技大学 | Preparation method of pyroelectric thick film detector with silicon cup groove structure |
| CN102842530A (en) * | 2012-08-15 | 2012-12-26 | 电子科技大学 | Thick film material electronic component and preparation method thereof |
| CN102842530B (en) * | 2012-08-15 | 2014-11-19 | 电子科技大学 | Thick film material electronic component and preparation method thereof |
| CN104108677A (en) * | 2014-07-18 | 2014-10-22 | 苏州能斯达电子科技有限公司 | MEMS (Micro-Electro-Mechanical System) silicon-based micro-heating plate and processing method thereof |
| CN104176699A (en) * | 2014-07-18 | 2014-12-03 | 苏州能斯达电子科技有限公司 | MEMS (micro electro mechanical system) silica-based micro-hotplate provided with thermal insulation channels and processing method of MEMS silica-based micro-hotplate |
| CN105352608A (en) * | 2015-11-19 | 2016-02-24 | 电子科技大学 | Absorption layer for broadband spectrum pyroelectric detector and preparation method thereof |
| CN105914252A (en) * | 2016-06-12 | 2016-08-31 | 中国科学院上海技术物理研究所 | Ultraviolet and infrared double color focal plane detector array, performance design and manufacturing method thereof |
| CN107546319A (en) * | 2017-08-28 | 2018-01-05 | 电子科技大学 | A kind of pyroelectric infrared detector and preparation method thereof |
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