CN101363267A - 太阳能屋顶及太阳能屋 - Google Patents
太阳能屋顶及太阳能屋 Download PDFInfo
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Abstract
本发明涉及一种太阳能屋顶，其包括一个屋顶本体及覆盖于该屋顶本体表面的可挠曲的太阳能电池，该太阳能电池沿着一个穹顶的表面设置，从而该太阳能电池可以接收太阳处于天空不同位置时发出的太阳光。本发明的太阳能屋顶中，可挠曲的太阳能电池是沿着一个穹顶的表面设置。由于穹顶为一个旋转得到的几何体，故穹顶的表面是对称的。故在同一天中，当太阳相对于地球自东向西运动时，太阳能电池可以接受从早上到晚上各时间段的太阳光，从而提高太阳能的利用效率。而且，随着一年四季的变换，从地面上看太阳在天空的位置改变，太阳能电池可以接收太阳在各个位置的照射，从而减小或者消除太阳能电池对太阳能利用效率的季节性差异。
Description
技术领域
本发明涉及一种具有能量收集装置的太阳能屋顶及太阳能屋，尤其涉及一种具有太阳能电池的太阳能屋顶及太阳能屋。
背景技术
太阳能电池主要应用的是光电转换原理，其结构主要包括基板以及设置在基板上的P型半导体材料层和N型半导体材料层。
光电转换是指太阳的辐射能光子通过半导体物质转变为电能的过程(请参见“GrownJunction GaAs Solar Cell”，Shen，C.C.；Pearson，G.L.；Proceedings of the IEEE，Volume 64，Issue 3，March 1976 Page(s)：384-385)。当太阳光照射到半导体上时，其中一部分被表面反射掉，其余部分被半导体吸收或透过。被吸收的光，当然有一些变成热能，另一些光子则同组成半导体的原子价电子碰撞，于是产生电子-空穴对。这样，光能就以产生电子-空穴对的形式转变为电能，并在P型和N型交界面两边形成势垒电场，将电子驱向N区，空穴驱向P区，从而使得N区有过剩的电子，P区有过剩的空穴，在P-N结附近形成与势垒电场方向相反的光生电场。光生电场的一部分除抵消势垒电场外，还使P型层带正电，N型半导体层带负电，在N区与P区之间的薄层产生所谓光生伏打电动势。若分别在P型层和N型半导体层焊上金属引线，接通负载，则外电路便有电流通过。如此形成的一个个电池元件，把它们串联、并联起来，就能产生一定的电压和电流，输出功率。
近年来，太阳能电池已经广泛应用于航天、工业、气象等领域，如何将太阳能电池应用于日常生活，以解决能源短缺、环境污染等问题已成为一个热点问题。因此，将太阳能电池与建筑相结合，使得未来的大型建筑或家庭房屋实现电力自给，是未来一大发展方向，德国、美国等国家更提出光伏屋顶计划。
目前采用太阳能电池的房屋一般是将太阳能电池设置在屋顶上，太阳能电池将太阳能转化为电能，供给房屋的用电设备。
然而，目前的太阳能电池通常是沿着同一个平面的方向设置在屋顶上，故只能接受来自大致一个方向的太阳光。在同一天中，太阳相对于地球自东向西运动，太阳在天空的位置不断改变，因此沿着一个方向设置的太阳能电池只能接受白天中某个时间段的太阳光，从而降低了太阳能的利用效率。而且，随着一年四季的变换，太阳直射地球的位置改变，因此太阳在天空的位置也不断改变。因此，在不同的季节，太阳光照射在上述太阳能电池的角度也不同，而上述太阳能电池无法根据季节作适应性调整。故上述设置的太阳能电池对太阳能的利用效率也随着季节的变迁而存在较大的差异。
发明内容
有鉴于此，有必要提供一种提高太阳能利用效率的太阳能屋顶及太阳能屋。
一种太阳能屋顶，其包括一个屋顶本体及覆盖于该屋顶本体表面的可挠曲的太阳能电池，该太阳能电池沿着一个穹顶的表面设置，从而该太阳能电池可以接收太阳处于天空不同位置时发出的太阳光。
一种太阳能屋，其包括一个房屋主体及一个覆盖于该房屋主体的太阳能屋顶。该太阳能屋顶包括一个屋顶本体及覆盖于该屋顶本体表面的可挠曲的太阳能电池，该太阳能电池沿着一个穹顶的表面设置，从而该太阳能电池可以接收太阳处于天空不同位置时发出的太阳光。
一种太阳能收集装置，其包括一个本体及覆盖于该本体表面的可挠曲的太阳能电池。该本体用于支撑该太阳能电池，该太阳能电池沿着一个穹顶的表面设置，从而该太阳能电池可以接收太阳处于天空不同位置时发出的太阳光。
相对于现有技术，本发明的太阳能屋顶中，可挠曲的太阳能电池是沿着一个穹顶的表面设置。由于穹顶为一个旋转得到的几何体，故穹顶的表面是对称的。故在同一天中，当太阳相对于地球自东向西运动时，太阳能电池可以接受从早上到晚上各时间段的太阳光，从而提高太阳能的利用效率。而且，随着一年四季的变换，从地面上看太阳在天空的位置改变，太阳能电池可以接收太阳在各个位置的照射，从而减小或者消除太阳能电池对太阳能利用效率的季节性差异。
附图说明
图1是本发明第一实施例太阳能屋与太阳在冬季的立体示意图；
图2是本发明第一实施例太阳能屋与太阳在夏季的立体示意图；
图3是本发明第一实施例太阳能屋的局部爆炸立体图；
图4是本发明第一实施例太阳能屋的电路连接示意图；
图5是本发明第一实施例的太阳能电池在自然状态(挠曲之前)的剖面示意图；
图6是本发明第二实施例太阳能屋的立体示意图。
具体实施方式
下面将结合附图，对本发明作进一步的详细说明。
请一起参阅图1至图3，为本发明第一实施例的太阳能接收装置的示意图。在本实施例中，太阳能收集装置是一个太阳能屋10，其包括一个房屋主体12及一个覆盖于该房屋主体上的太阳能屋顶14。太阳能屋顶14包括一个屋顶本体140及覆盖于该屋顶本体140表面的四块可挠曲的太阳能电池142。
房屋主体12用于支撑太阳能屋顶14，房屋主体12大致呈圆柱体状。屋顶本体140为一个穹顶(Dome)，在数学中，穹顶为一个旋转得到的几何体，其相对于其旋转轴是对称的。穹顶包括球体穹顶(Spherical Dome)和类似球体的穹顶(Spheroidal Dome)。当屋顶本体140为球体穹顶时，屋顶本体140的外表面是球面的一部分，例如二分之一球面或者三分之一球面等。类似球体的穹顶可以是例如椭球体穹顶(Ellipsoidal Dome)等。当屋顶本体140为椭球体穹顶时，屋顶本体140的外表面是椭球面的一部分，例如二分之一椭球面或者三分之一椭球面等。在本实施例中，屋顶本体140为一个半球体穹顶(Hemisphere Dome)，即屋顶本体140的外表面是二分之一球面。
屋顶本体140可以采用玻璃纤维(Fiber Glass)、玻璃或者钢筋混凝土等材料建造。优选地，屋顶本体140是采用玻璃纤维建造。房屋主体12可以采用常用的建筑材料建造，例如钢筋混凝土等。
太阳能电池142沿着一个穹顶的表面设置在屋顶本体140上，从而太阳能电池142可以接收太阳处于天空不同位置时发出的太阳光。太阳能电池142通过例如粘接或者支架固定在屋顶本体140上。在本实施例中，太阳能电池142贴合于屋顶本体140。太阳能电池142吸收照射到屋顶本体上的太阳光，并将其转换成电能。请参阅图4，太阳能电池142与变流器16电连接，变流器16与用电设备18(例如照明设备等)电连接，从而对用电设备18实施供电。
请参阅图5，图5为自然状态下(即挠曲之前)的太阳能电池142的剖面示意图。太阳能电池142包括一个可挠曲的基板1421，基板1421上依次形成有：背电极(Back MetalContact Layer)1422，P型半导体层1423，P-N结层1424，N型半导体层1425，及前电极(Front Metal Contact Layer)1426。
基板1421的材料是例如聚合物、不锈钢或者铝镁合金。聚合物可以是透明或者不透明的。透明的聚合物材料可以是聚碳酸酯(Polycarbonate，PC)、聚甲基丙烯酸甲酯(Polymethyl Methacrylate，PMMA)等。不透明的聚合物材料可以是聚醚醚酮(PolyetherEther Ketone，PEEK)、液晶聚合物(Liquid Crystal Polymer，LCP)等。不锈钢可以是奥氏体(Austenitic)不锈钢，铁素体(Ferritic)不锈钢，马氏体(Martensitic)不锈钢等。在本实施例中，基板1421的材料是聚合物。
背电极1422的材料可以是银(Ag)，铜(Cu)，钼(Mo)，铝(Al)，铜铝合金(Cu-Al Alloy)，银铜合金(Ag-Cu Alloy)，或者铜钼合金(Cu-Mo Alloy)等。背电极1422可以采用溅射(Sputtering)或者沉积(Deposition)的方法形成。
P型半导体层1423的材料可以是P型非晶硅(P type amorphous silicon，简称P-a-Si)材料，特别是P型含氢非晶硅(P type amorphous silicon with hydrogen，简称P-a-Si:H)材料。当然，该P型半导体层的材料也可以是III-V族化合物或II-VI族化合物，特别是掺杂铝(Al)、钾(Ga)、铟(In)的半导体材料，如氮化铝钾(AlGaN)或铝砷化镓(AlGaAs)。
优选地，P型半导体层1423的材料为P型非晶硅材料。非晶硅材料对光的吸收性比结晶硅材料强约500倍，所以在对光子吸收量要求相同的情况下，非晶硅材料制成的半导体层的厚度远小于结晶硅材料制成的半导体层的厚度。且非晶硅材料对基板材质的要求更低。所以采用非晶硅材料不仅可以节省大量的材料，也使得制作大面积的太阳能电池成为可能(结晶硅太阳能电池的面积受限于硅晶圆的尺寸)。
P-N结层1424的材料可以是结合性较好的III-V族化合物或I-III-VI族化合物，如碲化镉(CdTe)、铜铟硒(CuInSe2)等材料。也可以是铜铟镓硒(CuIn1-XGaSe2，CIGS)。该P-N结层132用于将光子转换成电子-孔穴对并形成势垒电场。该P-N结层132可以通过化学气相沉积法(Chemical Vapor Deposition，CVD)，溅射法等方法形成。
N型半导体层1425的材料可以是N型非晶硅(N Type Amorphous Silicon，简称N-a-Si)材料，特别是N型含氢非晶硅(N Type Amorphous Silicon With Hydrogen，简称N-a-Si：H)材料。当然，该N型半导体层133的材料也可以是III-V族化合物或II-VI族化合物，特别是掺杂氮(N)、磷(P)、砷(As)的半导体材料，如氮化钾(GaN)或磷化铟镓(InGaP)。
前电极1426的材料可以是，例如，铟锡氧化层(Indium Tin Oxide，ITO)，氧化锌(ZnO)等。
在本发明实施例的太阳能屋10中，可挠曲的太阳能电池142是沿着一个穹顶的表面设置。由于穹顶为一个旋转得到的几何体，故穹顶的表面是对称的。故在同一天中，当太阳相对于地球自东向西运动时，太阳能电池142可以接受从早上到晚上各时间段的太阳光，从而提高太阳能的利用效率。而且，随着一年四季的变换，从地面上看太阳在天空的位置改变，太阳能电池142可以接收太阳在各个位置的照射，从而减小或者消除太阳能电池142对太阳能利用效率的季节性差异。更具体地说，例如在冬季一天的某个时刻，太阳处在天空的第一位置，请参阅图1，太阳光主要照射在太阳能电池的区域A上，当然其他区域也可以接收到太阳光；在夏季一天的同一个时刻，太阳处在天空的第二位置，请参阅图2，太阳光主要照射在太阳能电池的区域B上，从而太阳能电池142可以在一年四季中接收太阳在各个位置的照射。此外，当屋顶本体140为一个半球体穹顶时，太阳能电池142可以在四季中保持恒定的面积接收太阳光的垂直照射，从而进一步减小或者消除太阳能电池142对太阳能利用效率的季节性差异。
请参阅图6，本发明第二实施例太阳能屋20与第一实施例太阳能屋10类似，太阳能屋20包括一个房屋主体22与一个太阳能屋顶24，该太阳能屋顶24包括一个屋顶本体(未标示)及覆盖于该屋顶本体表面的可挠曲的太阳能电池，区别在于：该屋顶本体为半椭球体穹顶，该太阳能电池沿着半椭球体穹顶的表面设置。
可以理解的是，房屋主体22的外表面上也可以设置可挠曲的太阳能电池(图未示)，从而接收照射到房屋主体22外表面的太阳光，进一步提高太阳能的利用率。
另外，本领域技术人员还可在本发明精神内做其它变化，当然，这些依据本发明精神所做的变化，都应包含在本发明所要求保护的范围之内。
Claims (10)
- 【权利要求1】一种太阳能屋顶，其包括一个屋顶本体及覆盖于该屋顶本体表面的可挠曲的太阳能电池，该太阳能电池沿着一个穹顶的表面设置，从而该太阳能电池可以接收太阳处于天空不同位置时发出的太阳光。
- 【权利要求2】如权利要求1所述的太阳能屋顶，其特征在于，该穹顶为球体穹顶或者椭球体穹顶。
- 【权利要求3】如权利要求2所述的太阳能屋顶，其特征在于，该球体穹顶是半球体穹顶。
- 【权利要求4】如权利要求2所述的太阳能屋顶，其特征在于，该类似球体的穹顶是半椭球体穹顶。
- 【权利要求5】如权利要求1所述的太阳能屋顶，其特征在于，该屋顶本体是由玻璃或者玻璃纤维制成。
- 【权利要求6】如权利要求1所述的太阳能屋顶，其特征在于，该太阳能电池包括一个基板、一层背电极、一层P型半导体层、一层P-N结层、一层N型半导体层及一层前电极，该背电极形成在该基板上，该P型半导体层形成在该背电极上，该P-N结层形成在该P型半导体层上，该N型半导体层形成在该P-N结层上，该前电极形成在该P-N结层上。
- 【权利要求7】如权利要求6所述的太阳能屋顶，其特征在于，该基板的材料是聚合物、不锈钢或者铝镁合金。
- 【权利要求8】如权利要求6所述的太阳能屋顶，其特征在于，该P-N结层的材料是铜铟镓硒、碲化镉或者铜铟硒。
- 【权利要求9】一种太阳能屋，其包括：一个房屋主体；及一个如权利要求1-8任一项所述的太阳能屋顶，该太阳能屋顶覆盖于该房屋主体上，从而该房屋主体支撑该太阳能屋顶。
- 【权利要求10】一种太阳能收集装置，其包括一个本体及覆盖于该本体表面的可挠曲的太阳能电池，该本体用于支撑该太阳能电池，该太阳能电池沿着一个穹顶的表面设置，从而该太阳能电池可以接收太阳处于天空不同位置时发出的太阳光。
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| CN113547924A (zh) * | 2021-08-20 | 2021-10-26 | 李新亚 | 安装太阳能发电装置的汽车 |
| CN113982319A (zh) * | 2021-10-11 | 2022-01-28 | 李新亚 | 多层住房的太阳能发电装置 |
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| GB2492063B (en) * | 2011-06-15 | 2013-08-28 | Rania Gideon Hill | Three dimensional solar panel base |
| EP2631389A1 (de) * | 2012-02-21 | 2013-08-28 | Andreas Braunagel | Konstruktionselement, Herstellungsverfahren, Verwendung sowie Gebäude |
| CN102619358B (zh) * | 2012-04-25 | 2014-03-19 | 皇明太阳能股份有限公司 | 一种太阳能逐日旋转凉亭及使用方法 |
| ES2547469B1 (es) * | 2015-02-05 | 2016-06-22 | Alessandro CAVIASCA | Módulo fotovoltaico |
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| US4594470A (en) * | 1983-08-26 | 1986-06-10 | Headrick Richard T | Solar generator mounting structure |
| DE69708463T2 (de) * | 1996-02-27 | 2002-05-16 | Canon K.K., Tokio/Tokyo | Photovoltaische Vorrichtung, die ein undurchsichtiges Substrat mit einer spezifischen unregelmässigen Oberflächenstruktur aufweist |
| US6184456B1 (en) * | 1996-12-06 | 2001-02-06 | Canon Kabushiki Kaisha | Photovoltaic device |
| US6499260B2 (en) * | 2000-02-23 | 2002-12-31 | Amtech Corporation | Portable greenhouse structure and method and apparatus for assembling same |
| US7150938B2 (en) * | 2001-03-30 | 2006-12-19 | Lithium Power Technologies, Inc. | Structurally embedded intelligent power unit |
| US20040065025A1 (en) * | 2001-07-10 | 2004-04-08 | Steven Durham | Energy generating shelter system and method |
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| CN113547924A (zh) * | 2021-08-20 | 2021-10-26 | 李新亚 | 安装太阳能发电装置的汽车 |
| CN113982319A (zh) * | 2021-10-11 | 2022-01-28 | 李新亚 | 多层住房的太阳能发电装置 |
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