CN101325366A - Circuit with protective circuit for correcting active power factor - Google Patents
Circuit with protective circuit for correcting active power factor Download PDFInfo
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- CN101325366A CN101325366A CNA2007101110780A CN200710111078A CN101325366A CN 101325366 A CN101325366 A CN 101325366A CN A2007101110780 A CNA2007101110780 A CN A2007101110780A CN 200710111078 A CN200710111078 A CN 200710111078A CN 101325366 A CN101325366 A CN 101325366A
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- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses an active power factor correcting circuit with the protective circuit, at least comprising a controlled switch and a power factor control chip for real-time controlling the on and off of the controlled switch, also comprising a voltage detecting circuit, for obtaining the voltage sample from the rectified DC bus voltage or a control voltage, and outputting the voltage sample to the power factor control chip; a voltage sample upper limit corresponding to the DC bus voltage or the normal range upper limit is arranged in the power factor control chip. When the voltage sample obtained through the voltage detecting circuit is higher than the upper limit of the voltage sample, the DC bus voltage or the control voltage is overhigh, then the lower factor control chip stops controlling the on/off of the controlled switch. The preferred embodiment of the invention furthermore provides an active power factor correcting circuit with other type of protective circuits. The circuit of the invention can prolong the service life of the circuit device.
Description
Technical field
The present invention relates to power technology, relate in particular to a kind of passive power factor corrective circuit with protective circuit.
Background technology
In electrical network, there is significant impact in various loads especially nonlinear load to grid supply quality.For example, the power supply of many electrical appliances need be converted to direct current with the alternating current of electrical network, and the pulsating current that produces in switching process includes a large amount of current harmonics components.These current harmonics components blow back into electrical network, can cause the harmonic wave " pollution " to electrical network, cause harmonic voltage to fall when electric current flows through line impedance, and sinusoidal wave line voltage is distorted.In addition, the harmonic wave of generation also causes the power factor (PF) of power network current to descend, and increases the loss of power distribution system conductors and transformer; And increase the center line harmonic current, so that other power device on the electrical network is caused electromagnetic interference.Power factor (PF) reduces load capacity and the reliability that also influences whole power-supply system simultaneously.
Along with the continuous extensive use of variable-frequency control technique, this technology is remarkable day by day to the negative effect that grid power factor produces.This be because, need power supply is carried out the conversion of AC-DC-AC in the frequency control, said process can produce various current harmonicss, if do not take measures, will seriously reduce grid power factor, and then the actual power ability of electrical network is reduced; Simultaneously, also can produce electromagnetic interference, influence other power consumption equipment.
In order to tackle above-mentioned situation, at present, China executes " CCC authentication " to household appliances, and (the CCC authentication i.e. " China Compulsory Certification ", its English name is " China Compulsory Certification ") standard, reach the requirement of this standard, various domestic variable frequency equipment must carry out Active PFC.
The current harmonics of commercialization suppressed and the power factor (PF) calibration device is applied to can realize Active PFC, and make all EMC (electromagnetic compatibility) standards of satisfied " CCC authentication " of each harmonic electric current content in the domestic variable frequency equipment such as convertible frequency air-conditioner.Described EMC standard comprises EMI (electromagnetic interference) standard and EMS (Electronmagnetic Stamina) standard two partly.So-called electromagnetic interference is meant this electromagnetic noise that is unfavorable for other system that produces in the process of carrying out proper function of machine; So-called Electronmagnetic Stamina is meant the ability that machine is not influenced by periphery electromagnetic environment in the process of carrying out function.
By research in recent years,
Existing multiple be used to improve the convertible frequency air-conditioner power factor (PF) and reduce electric current humorousThe device of wave component comprises Passive Power factor correcting circuit and passive power factor corrective circuit.Wherein, the passive power factor corrective circuit comprises omnidistance passive power factor corrective circuit and part passive power factor corrective circuit again.
Fig. 1 illustrates a kind of omnidistance passive power factor corrective circuit under the prior art, and sort circuit inserts a DC/DC switch converters between rectifier and load.This DC/DC switch converters comprises a high-power switching transistor as gate-controlled switch, is specially insulated gate bipolar transistor in this embodiment, i.e. IGBT.This circuit application current feedback technology, control the real-time conducting of this gate-controlled switch IGBT by special power controlling factors chip (hereinafter to be referred as the PFC control chip), carry out the DC/DC switch change-over, input electric current I i waveform was followed the tracks of in the whole electricity cycle exchanged input sinusoidal voltage waveform.This passive power factor corrective circuit can make Ii near sinusoidal, thereby makes the total harmonic distortion amount of input (THD) less than 5%, and power factor (PF) can bring up to 0.99 even higher.
Except above-mentioned omnidistance active power factor emphasizer circuit, also there is part passive power factor corrective circuit.
Different passive power factor corrective circuit all needs to adopt some device for power switching, comprise IGBT shown in this example and heavy-duty diode etc., these devices carry out parameter at normal running conditions and select, when being in situations such as abnormal voltage when rectification circuit, these devices will be in unaccommodated condition of work, after the overlong time, can the serious useful life that shortens device.
In the present passive power factor corrective circuit, adopted some safeguard measures for situations such as direct current overvoltages, still, the work of guaranteed output factor correcting circuit is in normal working conditions fully for these safeguard measures.
Summary of the invention
At above-mentioned defective; the technical problem that the present invention solves is; a kind of passive power factor corrective circuit with protective circuit is provided; whether this circuit can detect current circuit working condition normal; when condition of work is unusual; then stop the work of passive power factor corrective circuit, thereby realize protection the passive power factor corrective circuit.
A kind of passive power factor corrective circuit provided by the invention with protective circuit, at least comprise gate-controlled switch, and the power factor (PF) control chip of controlling this gate-controlled switch conducting in real time and ending, also comprise voltage detecting circuit, the DC bus-bar voltage or the control voltage that are used for after the rectification obtain a voltage sampling value, and this voltage sampling value is outputed to described power factor (PF) control chip; Be provided with voltage sampling higher limit in the described power factor (PF) control chip corresponding to DC bus-bar voltage or control voltage normal range (NR) higher limit, when the voltage sampling value that obtains by described voltage detecting circuit is higher than described voltage sampling higher limit, then judge described DC bus-bar voltage or control overtension, described power factor (PF) control chip stops to control the gate-controlled switch conducting of described passive power factor corrective circuit.
Preferably, be provided with voltage sampling lower limit in the described power factor (PF) control chip corresponding to DC bus-bar voltage or control voltage normal range (NR) lower limit, when the voltage sampling value that obtains by described voltage detecting circuit is lower than described busbar voltage sampling lower limit or control voltage sampling lower limit, then judge described DC bus-bar voltage or control brownout, described power factor (PF) control chip stops to control the gate-controlled switch conducting of described passive power factor corrective circuit.
Preferably, described voltage detecting circuit comprises and is connected on dc bus positive pole and power supply ground or is connected on first sample resistance and second sample resistance between control positive source and the power supply ground, and the common port of described first sample resistance and second sample resistance is connected by current-limiting resistance that correspondent voltage detects input on the described power factor (PF) control chip.
Preferably, described voltage detecting circuit comprises clamp circuit, and described clamp circuit comprises first clamping diode, second clamping diode of differential concatenation between signal power source positive pole and power supply ground; Wherein, the negative electrode of described first clamping diode connects described signal power source positive pole, and its anode connects the negative electrode of described second clamping diode; The anode of described second clamping diode connects power supply ground; The negative electrode common port of the anode of described first clamping diode and described second clamping diode is the common port of described first sample resistance and described second sample resistance.
Preferably, described testing circuit comprises the voltage detecting input that is connected described power factor (PF) control chip and the filter capacitor between the power supply ground.
Preferably; also has temperature protection circuit; this circuit is used for detecting the temperature of this passive power factor corrective circuit power component, and when temperature was too high, then described power factor (PF) control chip stopped to control the gate-controlled switch conducting of described passive power factor corrective circuit.
Preferably, described temperature protection circuit adopts the thermistor that is installed on the fin as detector unit; This thermistor and a sample resistance are connected between signal power source positive pole and the power supply ground, and both common ports connect the temperature detection end of described power factor (PF) control chip by a current-limiting resistance.
Preferably, the concrete connected mode that described thermistor and sample resistance are connected between signal power source positive pole and the power supply ground is, described thermistor one end is isolated inductance by one and is connected described signal power source, and described sample resistance is connected between the thermistor other end and the power supply ground.
Preferably, described thermistor two ends parallel connection is used for the variable capacitance of filtering.
Preferably, between the temperature detection end of described power factor (PF) control chip and power supply ground, connect filter capacitor.
The protective circuit of the passive power factor corrective circuit that basic technical scheme of the present invention provides; by detecting the DC bus-bar voltage of rectifier output end; the function that provides overtension to detect; this function can guarantee that device for power switching can not be operated under the too high condition of busbar voltage, can not damage it because operating voltage is too high.Simultaneously, the preferred embodiments of the present invention provide DC bus-bar voltage low excessively detection, and busbar voltage is crossed when hanging down, and described device for power switching quits work, and avoid it owing to condition of work makes device for power switching aging unusually.
In addition; among the present invention further optimization embodiment; detection to the control voltage of PFC control chip also is provided; no matter control overtension or low excessively; the capital produces protection; stop the work of PFC chip, thereby avoid the PFC control chip under improper control voltage conditions, to work, cause the unusual and damage of chip operation.
In further preferred embodiment of the present invention, the heatsink temperature testing circuit is set, and whether this circuit can detect radiator temperature higher, when this situation occurring, the PFC control chip can quit work, thereby avoids the power component explosion owing to temperature overheating in the pfc circuit.
Description of drawings
Fig. 1 is a kind of omnidistance passive power factor corrective circuit of prior art;
Fig. 2 is the circuit theory diagrams of the DC bus-bar voltage testing circuit that provides of the first embodiment of the present invention;
Fig. 3 is the circuit theory diagrams of the control voltage detecting circuit that provides of the first embodiment of the present invention;
Fig. 4 is the circuit theory diagrams of the temperature sensing circuit of first embodiment of the invention employing;
Fig. 5 is the control action sequential chart of first embodiment of the invention.
Embodiment
Please referring to Fig. 1, this figure is a kind of power circuit diagram with passive power factor corrective.This is a concrete application scenario of protective circuit provided by the invention, and still, various protective circuits provided by the invention also are applicable to the power circuit with passive power factor corrective of other occasion fully.
As shown in Figure 1, in this circuit, the ac input end of bridge rectifier ZT connects civil power Vi, filter capacitor C1 in parallel between the both positive and negative polarity of its dc output end, on the negative pole of output end of rectifier power source ZT, be in series with current sampling resistor SH1, the resistance of this sample resistance SH1 is very little, and it connects the negative input of inverter circuit IPM away from the end of rectifier power source ZT, and as power supply ground.Anodal inductance L 1 one ends that connect of the dc output end of described rectification circuit ZT, the other end of this inductance L 1 connects diode FRD anode.The negative electrode of diode FRD connects the input anode of inverter circuit IPM.Connect gate-controlled switch IGBT between the anode of described diode FRD and the power supply ground, among this embodiment, gate-controlled switch adopts insulated gate bipolar transistor (IGBT).Between the negative electrode and power supply ground of described diode FRD, be connected with storage capacitor C2.Simultaneously, between the negative electrode and power supply ground of described diode FRD, also be connected with variable capacitance E1 as flat wave capacitor.
In this circuit, also have the power factor (PF) control unit, be specially a PFC control chip IC among this embodiment.This chip is the special chip with programing function, and its output 3 connects the control end of described gate-controlled switch IGBT, when this output output high level, and described gate-controlled switch IGBT conducting; When its output low level, described gate-controlled switch IGBT turn-offs.This chip IC also has the two ends that sampling current input 1 and 2, two terminals of sampling current input connect current sampling resistor SH1 respectively, obtaining the voltage difference at current sampling resistor SH1 two ends, thereby obtains the current waveform of rectification circuit.Equally, this chip IC also has sampling voltage input 4, and this terminal is connected to the negative electrode of described diode FRD by resistance R 1, is used to obtain the magnitude of voltage that this circuit outputs to inverter circuit.In addition, the output 6 of PFC pio chip IC, output 7 connect anode, the negative electrode of an external LED respectively, this LED is used for the state of the output 3 of display chip IC, when output 3 is high level, the output voltage of output 6, output 7 makes this diode (LED) forward conduction luminous, when output 3 is low level, the output voltage of output 6, output 7 make this diode (LED) by, not luminous; In addition, the terminal 8 of this chip IC connects power supply ground.Another terminal 9 is the power input of this chip, connects DC power supply V between terminal 9 and the terminal 8
d, this DC power supply V
dWorking power for chip IC.In fact, this DC power supply V
dCan adopt multiple mode to obtain, in the present embodiment, this DC power supply V
dBe one from the Switching Power Supply of civil power through a special use, acquisition+DC power supply of 15V.Only illustrate this power supply in this circuit diagram, but do not represent the specific implementation of this power supply.
Described PFC control chip IC also has DC bus-bar voltage detection terminal 11, control voltage detection terminal 12 and temperature protection detection terminal 13, and following introduction is seen in the effect of above-mentioned terminal.
Above circuit at first electric main is converted into DC bus-bar voltage V
Dc, and further carry out current inversion through the inverter circuit IPM shown in the figure, realize frequency modulation and voltage modulation.At present, be extensive use of this class power supply in occasions such as convertible frequency air-conditioners, certainly, in the concrete application scenario, may adopt and above-mentioned different physical circuit and control mode, but its basic structure all comprises insulated gate bipolar transistor IGBT and heavy-duty diode FRD as shown in Figure 1, and storage capacitor C2; In addition, also comprise described insulated gate bipolar transistor IGBT conducting of control and the PFC control chip IC that ends.In actual use, if above-mentioned device is not using under normal voltage conditions and temperature conditions, can produce accelerated ageing or can't operate as normal etc. fault.
Please referring to Fig. 2, this figure is the circuit theory diagrams of the DC bus-bar voltage testing circuit that provides of the first embodiment of the present invention.This circuit is used for obtaining a busbar voltage sampling value from DC bus-bar voltage, and this busbar voltage sampling value is outputed among the described PFC control chip IC.In described PFC control chip IC, according to the higher limit and the lower limit of described DC bus-bar voltage, determine corresponding bus lines voltage sampling higher limit and lower limit respectively, and judge according to this magnitude of voltage by PFC control chip IC; If the busbar voltage sampling value is higher than predetermined busbar voltage sampling higher limit, show that then busbar voltage is too high; If the busbar voltage sampling value is lower than predetermined busbar voltage sampling lower limit, show that then busbar voltage is low excessively, in the above two kinds of cases, PFC control chip IC can quit work.The principle of this DC bus-bar voltage testing circuit is described below in conjunction with Fig. 2.
Comprise sample circuit, clamp circuit and filter capacitor in this DC bus-bar voltage testing circuit.
Described sample circuit comprises two sample resistances that are connected between dc bus positive pole and the dc bus negative pole (the dc bus negative pole is power supply ground simultaneously in this circuit), comprise the 7th resistance R 7, the 9th resistance R 9, the common port of described the 7th resistance R 7 and the 9th resistance R 9 detects input by the busbar voltage that the 8th resistance R 8 is connected described PFC control chip IC, and foregoing circuit is formed the sample circuit of this DC bus-bar voltage testing circuit.This circuit outputs to busbar voltage test side with dropping to described the 9th resistance R 9 and power supply voltage on the ground as sampling voltage with the DC bus-bar voltage dividing potential drop of connecting; Simultaneously, by described the 8th resistance R 8, this voltage is carried out current limliting.The sampling voltage of Huo Deing wherein by suitably choosing the resistance value of the 7th resistance R 7 and the 9th resistance R 9, makes this voltage roughly within 0-5V, with the voltage request of the signal input part that satisfies described PFC control chip IC.
Described clamp circuit comprises second diode D2, the three diode D3 of differential concatenation between+5V DC power supply, and described+5V DC power supply is the signal power source positive pole that is input to described PFC control chip IC; Wherein, the negative electrode connection+5V power supply of the described second diode D2, its anode connects the negative electrode of described the 3rd diode D3; The anode of described the 3rd diode D3 connects power supply ground.The common port of the negative electrode of the anode of the described second diode D2 and described the 3rd diode D3 is the common port of described the 7th resistance R 7 and the 9th resistance R 9.The effect of this clamp circuit is to prevent to be input to the brownout of described PFC control chip IC or too high, surpasses the receivable voltage range of detection terminal of described PFC control chip IC.When overtension, when for example reaching 5.7V, described second diode current flow makes the import-restriction of the busbar voltage test side of the described PFC of being input to control chip be lower than this voltage; Work as brownout, even when becoming negative voltage, reach-when 0.7V was following, described the 3rd diode current flow was limited in the input voltage of described busbar voltage test side and is higher than this voltage.
This busbar voltage testing circuit also comprises filter capacitor, i.e. the 3rd capacitor C 3 among the figure, and the busbar voltage that this electric capacity is connected described PFC control chip IC detects between input and the power supply ground, is used to filter the alternating component that may flow into PFC control chip IC.
Owing to have foregoing circuit, the busbar voltage test side of described PFC control chip IC can obtain the sampling value of DC bus-bar voltage at any time, when this sampling value is higher than a predefined upper voltage limit, show that described DC bus-bar voltage is too high, described PFC control chip IC quits work immediately, the control end of described gate-controlled switch IGBT is always a low level, make this gate-controlled switch be in the state that turn-offs all the time, like this, this gate-controlled switch IGBT can or not cross low and is damaged because of overtension.
Except above-mentioned busbar voltage testing circuit, in the present embodiment, this passive power factor corrective circuit also has the control voltage detecting circuit of the supply power voltage that detects PFC control chip IC, and the effect of this control voltage detecting circuit is the magnitude of voltage that the supply voltage that provides to described PFC control chip IC is provided.This supply voltage is called control voltage.This control voltage is a direct voltage about 15V in the present embodiment, in Fig. 1, represents this DC power supply with a battery symbol, but in fact, this control voltage can obtain by multiple direct voltage source, for example, obtains by a Switching Power Supply.
Please referring to Fig. 3, this figure is the circuit theory diagrams of the control voltage detecting circuit that provides of present embodiment.This circuit obtains a control voltage sampling value from described control voltage, and this sampling value is outputed to the control voltage detecting end 12 of described PFC control chip IC, IC judges according to this sampling voltage value by the PFC control chip, if this sampling voltage value shows described control voltage and is lower than the predetermined lower limit value, then shows the control brownout; If sampling voltage value is higher than the preset upper limit value, then show the control overtension, in the above two kinds of cases, PFC control chip IC can quit work, with the Active PFC control abnormity of avoiding causing owing to the control electric voltage exception.
Circuit structure with described busbar voltage testing circuit is identical in this control voltage detecting circuit, and the voltage difference of its sampling only is input to the terminal difference of described PFC control chip IC.Concrete component parameters also should change accordingly according to sampling voltage.
This control voltage detecting circuit comprises sample circuit, clamp circuit and filter capacitor.
Described sample circuit comprises the tenth resistance R the 10, the 12 resistance R 12 that is connected between control positive source and the control voltage source ground (all power supplys adopt same power supply ground in this circuit), the common port of described the tenth resistance R 10 and the 12 resistance R 12 is connected the control voltage detecting end of described PFC control chip IC by the 11 resistance R 11, and foregoing circuit is formed the sample circuit of this control voltage detecting circuit.This circuit outputs to control voltage detecting end with dropping to described the 12 resistance R 12 and power supply voltage on the ground as sampling voltage with the DC bus-bar voltage dividing potential drop of connecting; Simultaneously, by described the 11 resistance R 11, this voltage is carried out current limliting.Wherein the sampling voltage of Huo Deing by suitably choosing the resistance value of the tenth resistance R 10 and the 12 resistance R 12, makes this voltage roughly within 0-5V, to satisfy the requirement of described PFC control chip IC.
Described clamp circuit comprises four diode D4, the five diode D5 of differential concatenation between+5V DC power supply both positive and negative polarity; Wherein, the negative electrode connection+5V power supply of described the 4th diode D4, its anode connects the negative electrode of described the 5th diode D5; The anode of described the 5th diode D5 connects power supply ground.The common port of the negative electrode of the anode of described the 4th diode D4 and described the 5th diode D5 is the common port of described the tenth resistance R 10 and the 12 resistance R 12.The effect of this clamp circuit is to prevent to be input to the brownout of described PFC control chip IC or too high, surpasses the receivable voltage range of detection terminal of described PFC control chip IC.When overtension, when for example reaching 5.7V, described the 4th diode D4 conducting makes the import-restriction of the busbar voltage test side of the described PFC of being input to control chip be lower than this voltage; Work as brownout, even when becoming negative voltage, reach-when 0.7V was following, described the 5th diode D5 conducting was limited in the input voltage of described control voltage detecting end and is higher than this voltage.
This control voltage detecting circuit also comprises filter capacitor, i.e. the 4th capacitor C 4 among the figure, and this electric capacity is connected between the control voltage detecting input and power supply ground of described PFC control chip IC, is used to filter the alternating component that may flow into PFC control chip IC.
Except above-mentioned protective circuit; owing in having the power circuit of Active PFC, have some power devices, be example with circuit shown in Figure 1; comprise gate-controlled switch IGBT, diode FRD, rectifier bridge ZT etc., these power devices all are installed on the fin.These power devices can produce many heats at work, elevate the temperature, if these long term device are in superheat state, can make device cause damage, and serious meeting is blasted.For this reason; in the present embodiment; increased temperature protection circuit; this circuit is by detecting the temperature of fin; estimate the temperature value of described gate-controlled switch IGBT, diode FRD, rectifier bridge ZT, and under condition of overhigh temperature, described power factor correction circuit is quit work; avoid temperature to continue to rise, cause device failure.When temperature is returned a predetermined numerical value, described power factor correction circuit is resumed work.
Fig. 4 illustrates the circuit theory diagrams of the temperature sensing circuit of present embodiment employing, and this circuit adopts thermistor as temperature sensor, detects the temperature detection end that the temperature detection voltage that obtains is provided to the PFC control chip, judges for it.
As shown in Figure 4, this temperature sensing circuit adopts a temperature sensor that is installed on the fin to carry out temperature detection, this temperature sensing implement body is to adopt thermistor CN2, and this thermistor CN2 can adopt semistor, and promptly resistance rises along with temperature and raises; Also can adopt negative tempperature coefficient thermistor, promptly resistance rises and descends along with temperature; Therefore, by detecting the change in resistance of this thermistor, just can know the temperature conditions of corresponding fin.In the present embodiment, use semistor.
As shown in Figure 4, described temperature sensing circuit comprises temperature sampling circuit, this circuit comprises thermistor CN2 and the 6th resistance R 6 that is connected between signal power source+5V and the power supply ground, and wherein, the end of thermistor CN2 connects described+5V power supply by isolating inductance L 1; One end of described the 6th resistance R 6 connects power supply ground; The common port that described thermistor CN2 is connected with the 6th resistance R 6 has passed through the 5th resistance R 5 of metering function, connects the temperature detection end 13 of described PFC control chip IC.In addition ,+clutter that 5V power supply may introduce described in order to filter be to the influence of thermistor CN2, the second variable capacitance E2 in parallel at thermistor CN2 two ends.Flow into the temperature protection detection terminal 13 of described PFC control chip IC for fear of extraneous alternating current clutter, between this temperature protection detection terminal 13 and power supply ground, connect the 5th capacitor C 5, so that filter the alternating component that to scurry into.
The temperature sampling voltage of said temperature testing circuit output, be input to after the temperature detection input 13 of described PFC control chip IC, judge according to this sampled voltage whether the temperature of high-power switch device has exceeded normal value by described PFC control chip IC, when this sampled voltage is higher than a temperature sampling voltage higher limit, then stop the control of described PFC control chip IC, after described sampled voltage is lower than temperature sampling voltage higher limit, then recover the work of described PFC control chip IC again.
More than three kinds of testing circuits, all need to be provided for the predetermined value of corresponding work condition judgment, then, scope according to measured voltage, work to PFC control chip IC is controlled, and when condition of work is undesirable, then stops the work of described PFC control chip IC, after the condition for the treatment of is recovered, the work that then recovers PFC control chip IC.Should illustrate that the described predetermined value that is used for the condition of work judgement in fact all adopts two values with retrace interval, in order to avoid change repeatedly owing to the measured value fluctuation produces operating state, concrete condition is seen below and is chatted content.
Fig. 5 illustrates the sampled voltage that uses above-mentioned three testing circuits to obtain and carries out the control action sequential chart that the PFC control circuit is protected.This sequential chart is used to illustrate the concrete process of controlling according to detected value and the various threshold values that set.
The control procedure of the too high protection of DC bus-bar voltage at first is described according to this figure.Fig. 5 illustrates, when this passive power factor corrective circuit operate as normal, and DC bus-bar voltage V
DcNormal value be set at and can not be higher than bus voltage upper limit value 380V, the DC bus-bar voltage sampling value of corresponding described 380V is 1.94V, this value is DC bus-bar voltage first higher limit of taking a sample; The DC bus-bar voltage sampling value that outputs to described PFC control chip IC by described DC bus-bar voltage testing circuit is higher than this DC bus-bar voltage when taking a sample the first higher limit 1.94V, as shown in Figure 5, described PFC control chip IC stops output, promptly stop promptly being in low level interval all the time in the operating state curve of expression gate-controlled switch IGBT in the corresponding diagram 5 to described gate-controlled switch IGBT output high-level control signal.After described PFC control chip IC stops output, described DC bus-bar voltage testing circuit continues to detect the DC bus-bar voltage sampling value, when described DC bus-bar voltage sampling value is lower than a predetermined DC bus-bar voltage and takes a sample the second higher limit 1.81V, illustrate that DC bus-bar voltage has been lower than 355V, then described PFC control chip IC begins normally to export control signal to described gate-controlled switch IGBT.The control action sequential chart of Fig. 5 as can be seen; aforementioned DC bus-bar voltage higher limit is actual to comprise described busbar voltage first higher limit and busbar voltage second higher limit of taking a sample of taking a sample; this can make the corresponding certain backhaul interval of the too high protection of described busbar voltage; when avoiding busbar voltage near 380V, to shake; the scope of the too high protection of busbar voltage appears just having entered; very fast again end protection causes unstable working condition.
Equally with reference to Fig. 5, illustrate that DC bus-bar voltage crosses the control procedure of low protection.Fig. 5 illustrates, when this passive power factor corrective circuit operate as normal, and DC bus-bar voltage V
DcNormal value be set at and can not be lower than DC bus-bar voltage lower limit 190V, the DC bus-bar voltage sampling value of corresponding described 190V is 0.97V, this value is DC bus-bar voltage first lower limit of taking a sample; The busbar voltage sampling value that outputs to described PFC control chip IC by described DC bus-bar voltage testing circuit is lower than this DC bus-bar voltage when taking a sample the first lower limit 1.94V, as shown in Figure 5, described PFC control chip IC stops system output, promptly stop promptly being in low level interval all the time in the operating state curve of expression gate-controlled switch IGBT in the corresponding diagram 5 to described gate-controlled switch IGBT output high-level control signal.After described PFC control chip IC quits work, described DC bus-bar voltage testing circuit continues to detect the busbar voltage sampling value, when described busbar voltage sampling value is higher than a predetermined busbar voltage and takes a sample the second lower limit 1.07V, illustrate that busbar voltage is higher than 210V, then described PFC control chip IC begins normally to export control signal to described gate-controlled switch IGBT.Stipulate that described busbar voltage the take a sample reason of second lower limit of first lower limit and busbar voltage of taking a sample is identical with the too high protection of described busbar voltage.
With reference to Fig. 5, the control procedure of control brownout protection is described equally.Fig. 5 illustrates, when this passive power factor corrective circuit operate as normal, and control voltage V
dNormal value be set at and can not be lower than control lower voltage limit value 10V, the control voltage sampling value of corresponding described 10V is 2.07V, this value is control voltage sampling first lower limit; When the control voltage sampling value that outputs to described PFC control chip IC by described control voltage detecting circuit is lower than this control voltage sampling first lower limit 2.07V, as shown in Figure 5, described PFC control chip IC turn-offs, promptly stop promptly being in low level interval all the time in the operating state curve of expression gate-controlled switch IGBT in the corresponding diagram 5 to described gate-controlled switch IGBT output high-level control signal.When closing, described PFC control chip IC has no progeny, described control voltage detecting circuit continues to detect control voltage sampling value, when described control voltage sampling value is higher than an expectant control voltage sampling second lower limit 2.49V, illustrate that control voltage is higher than 12V, then described PFC control chip IC begins normally to export control signal to described gate-controlled switch IGBT.Stipulate that described control voltage sampling first lower limit is identical with the too high protection of described busbar voltage with the reason of control voltage sampling second lower limit.
Fig. 5 also illustrates the control procedure of temperature sensing circuit simultaneously.Its temperature sampling voltage first higher limit is 4.5V, and temperature sampling voltage second higher limit is 4.4V.Its concrete control procedure no longer describes in detail.
The controlled course of work of LED also is shown among Fig. 5, and as can be seen, when described gate-controlled switch IGBT quit work, described light-emitting diode extinguished, and when described gate-controlled switch IGBT operate as normal, this LED is luminous.
By above-mentioned protective circuit, this PFC control circuit can be quit work under various abnormal operating conditions, avoid causing the unusual and device failure of the power work that produces owing to the PFC control abnormity or reduce negative consequence such as useful life.
The above only is a preferred implementation of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1, a kind of passive power factor corrective circuit with protective circuit, at least comprise gate-controlled switch, and the power factor (PF) control chip of controlling this gate-controlled switch conducting in real time and ending, it is characterized in that, also comprise voltage detecting circuit, the DC bus-bar voltage or the control voltage that are used for after the rectification obtain a voltage sampling value, and this voltage sampling value is outputed to described power factor (PF) control chip; Be provided with voltage sampling higher limit in the described power factor (PF) control chip corresponding to DC bus-bar voltage or control voltage normal range (NR) higher limit, when the voltage sampling value that obtains by described voltage detecting circuit is higher than described voltage sampling higher limit, then judge described DC bus-bar voltage or control overtension, described power factor (PF) control chip stops to control the gate-controlled switch conducting of described passive power factor corrective circuit.
2; passive power factor corrective circuit with protective circuit according to claim 1; it is characterized in that; be provided with voltage sampling lower limit in the described power factor (PF) control chip corresponding to DC bus-bar voltage or control voltage normal range (NR) lower limit; when the voltage sampling value that obtains by described voltage detecting circuit is lower than described busbar voltage sampling lower limit or control voltage sampling lower limit; then judge described DC bus-bar voltage or control brownout, described power factor (PF) control chip stops to control the gate-controlled switch conducting of described passive power factor corrective circuit.
3, the passive power factor corrective circuit with protective circuit according to claim 1 and 2; it is characterized in that; described voltage detecting circuit comprises and is connected on dc bus positive pole and power supply ground or is connected on first sample resistance and second sample resistance between control positive source and the power supply ground, and the common port of described first sample resistance and second sample resistance is connected by current-limiting resistance that correspondent voltage detects input on the described power factor (PF) control chip.
4, the passive power factor corrective circuit with protective circuit according to claim 3, it is characterized in that, described voltage detecting circuit comprises clamp circuit, and described clamp circuit comprises first clamping diode, second clamping diode of differential concatenation between signal power source positive pole and power supply ground; Wherein, the negative electrode of described first clamping diode connects described signal power source positive pole, and its anode connects the negative electrode of described second clamping diode; The anode of described second clamping diode connects power supply ground; The negative electrode common port of the anode of described first clamping diode and described second clamping diode is the common port of described first sample resistance and described second sample resistance.
5, the passive power factor corrective circuit with protective circuit according to claim 4 is characterized in that, described testing circuit comprises the voltage detecting input that is connected described power factor (PF) control chip and the filter capacitor between the power supply ground.
6, according to claim 1 or 2 described passive power factor corrective circuit with protective circuit; it is characterized in that; also has temperature protection circuit; this circuit is used for detecting the temperature of this passive power factor corrective circuit power component; when temperature was too high, then described power factor (PF) control chip stopped to control the gate-controlled switch conducting of described passive power factor corrective circuit.
7, the passive power factor corrective circuit with protective circuit according to claim 6 is characterized in that, described temperature protection circuit adopts the thermistor that is installed on the fin as detector unit; This thermistor and a sample resistance are connected between signal power source positive pole and the power supply ground, and both common ports connect the temperature detection end of described power factor (PF) control chip by a current-limiting resistance.
8, the passive power factor corrective circuit with protective circuit according to claim 7; it is characterized in that; the concrete connected mode that described thermistor and sample resistance are connected between signal power source positive pole and the power supply ground is; described thermistor one end is isolated inductance by one and is connected described signal power source, and described sample resistance is connected between the thermistor other end and the power supply ground.
9, the passive power factor corrective circuit with protective circuit according to claim 8 is characterized in that, the two ends parallel connection of described thermistor is used for the variable capacitance of filtering.
10, the passive power factor corrective circuit with protective circuit according to claim 8 is characterized in that, connects filter capacitor between the temperature detection end of described power factor (PF) control chip and power supply ground.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101110780A CN101325366A (en) | 2007-06-14 | 2007-06-14 | Circuit with protective circuit for correcting active power factor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101110780A CN101325366A (en) | 2007-06-14 | 2007-06-14 | Circuit with protective circuit for correcting active power factor |
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| CN101325366A true CN101325366A (en) | 2008-12-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2007101110780A Pending CN101325366A (en) | 2007-06-14 | 2007-06-14 | Circuit with protective circuit for correcting active power factor |
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