CN101292195A - Imprint apparatus, imprint method, and mold for imprint - Google Patents
Imprint apparatus, imprint method, and mold for imprint Download PDFInfo
- Publication number
- CN101292195A CN101292195A CNA2006800389780A CN200680038978A CN101292195A CN 101292195 A CN101292195 A CN 101292195A CN A2006800389780 A CNA2006800389780 A CN A2006800389780A CN 200680038978 A CN200680038978 A CN 200680038978A CN 101292195 A CN101292195 A CN 101292195A
- Authority
- CN
- China
- Prior art keywords
- mould
- substrate
- distance
- described mould
- optical system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Length Measuring Devices By Optical Means (AREA)
Abstract
An imprint apparatus for imprinting a pattern provided to a mold onto a substrate or a member on the substrate includes a light source for irradiating a surface of the mold disposed opposite to the substrate and a surface of the substrate with light; an optical system for guiding the light from the light source to the surface of the mold and the surface of the substrate and guiding reflected lights from these surfaces to a spectroscope; a spectroscope for dispersing the reflected lights guided by the optical system into a spectrum; and an analyzer for analyzing a distance between the surface of the mold and the surface of the substrate. The analyzer calculates the distance between the surface of the mold and the surface of the substrate by measuring a distance between the surface of the mold and a surface formed at a position away from the surface of the mold.
Description
Technical field
The pattern that the present invention relates to be used for to offer mould is impressed into imprinting apparatus and the method for stamping on the element on substrate or the substrate, and also relates to impressing mould.
Background technology
In recent years, as people such as Stephan Y.Chou at Appl.Phys.Lett., the 67th volume, the 21st phase, proposed in the 3114-3116 page or leaf (1995), a kind of fine pattern transfer that is used for being located on the mould is developed and receives publicity to the technology on semiconductor, glass, resin, metal or the analog.This technology is called as nano impression or nanometer embossing, and reason is the resolution characteristic that it has about several nanometers.By utilizing this technology, can handle the three-dimensional structure of wafer scale simultaneously.For this reason, wish that this technology is applied to such as the production technology of the such optical device of photonic crystal with such as the production technology of the such structure of μ-TAS (micro-total analysis system) and biochip.
In the treatment technology that uses such nano impression, when it for example was used for semiconductor fabrication etc., the fine pattern on the mould was transferred on the element on substrate or the substrate in the following manner.
At first, on substrate (for example semiconductor wafer), form the photocurable resin material layer.
Then, expection pattern mould formed thereon is pressed against on the resin bed, uses ultraviolet rays irradiation afterwards with curing resin material.As a result, the pattern that is formed on the mould is transferred on the resin bed.
, by use resin bed as mask implement etching, on substrate, form the pattern of mould thus thereafter.
During stamping technique transfer impression is formed in pattern on the mould, in order to implement the high resolving power fine processing by improving transfer printing precision, must Measurement die and substrate between distance (gap).
U.S. Patent No. 6,696,220 B2 have described a kind of method by the gap between interferometer measurement mould and the substrate.US 6,696, and 220 B2 also disclose a kind of gap measuring method, and it can be by the shape measure gap of designing mould suitably, even described gap (distance) is 1/4 or following distance of the light wavelength measured with interferometer.This gap measuring method will be described with reference to figure 8.
The distance between the surface 704 of the first surface 702 of mould 701 and substrate 706 for 1/4 or the following situation of measuring wavelength under, be difficult to by the accurate measuring distance 706 of interferometer.At US 6,696, in the gap measuring method that 220 B2 describe, measurement zone is located at the position different with the position that forms first surface 702.In measurement zone, provide second surface 703 in addition.By such structure, when the distance between second surface 703 and the substrate surface 704 for measure wavelength 1/4 or when above, can measure the distance between second surface 703 and the substrate surface 704.For this reason, by the distance 705 between prior measurement first surface 702 and the second surface 703, value that can measuring distance 706, though this distance for measure wavelength 1/4 or below.
Carry one in passing, needing the current of high resolving power fine processing day by day, in above-mentioned nano impression, need further to improve about the impression precision.
Yet at US 6,696, disclosed gap measuring method not necessarily satisfies such needs among 220 B2.
More specifically, the distance 705 between first surface 702 and the second surface 703 can not be measured, reason be these surfaces not toward each other.Therefore, the distance between distance 705 and second surface 703 and the substrate surface 704 need be measured by the method except that the method for using interferometer.Yet, when these two distances are measured by the method except that the method for using interferometer, produced such problem, measuring error promptly takes place easily.
Further, US 6,696,220 B2 also described need be in the textural optical system different with the optical system that is used to implement the range observation between mould and the substrate so that carry out the measurement of position in the plane of mould and substrate.At US 6,696, in the described method of 220 B2, implement to aim in the plane based on the data that obtain by position measurement in the plane.Carry one in passing, term " in the plane " is used about the plane of the treatment surface that is parallel to mould, and the position is by X in the plane, and Y and θ represent.Further, the distance between mould and the substrate (gap) is represented by Z.
Using the device of nano impression is a kind of like this treating apparatus, and promptly the ratio of the size between mould and the imprinted pattern is 1: 1, is different from the device that is used to reduce exposure such as ledex or analog.For this reason, back from the rear surface of mould to the position, space constraints is compared with the situation of ledex or analog and is wanted harsh.For example, the pattern area at the treatment surface place of mould is the diameter that 26 * 36mm and the object lens that are used for optical system have about 20mm, makes these sizes belong to same order.
Therefore, as US 6,696, described in 220 B2, when being provided for implementing the optical system of range observation independently and being used to implement the optical system of position measurement in the plane, be difficult to these optical systems are arranged in the same area together.For this reason, the problem of existence is owing to temperature variation, vibration etc. is difficult to prevent the range observation error that caused by the position deviation between mould and the substrate.
Summary of the invention
Target of the present invention is to address the above problem.
Objectives of the present invention provide imprinting apparatus, method for stamping and the impressing mould of the distance (gap) between the Measurement die surface and substrate surface more accurately.
According to an aspect of the present invention, provide a kind of pattern that will offer mould to be impressed into imprinting apparatus on the element on substrate or the substrate, described imprinting apparatus comprises:
Light source, the surface of the described mould of its usefulness photoirradiation and described substrate positioned opposite and the surface of described substrate;
Optical system, it is used for and will guides to the surface of the surface of described mould and described substrate from the photoconduction of described light source and will direct into spectroscope from these surperficial reflected light;
Spectroscope, it is used for the reflection light diffusing of described optical system guiding is become spectrum; With
Analyzer, it is used to analyze the distance between the surface of the surface of described mould and described substrate;
Wherein said analyzer by measuring described mould the surface and the distance between the surface of the surface of the described mould of distance calculation between the surface that forms in position and described substrate away from the surface of described mould.
According to a further aspect in the invention, provide a kind of pattern that will offer mould to be impressed into method for stamping on the element on substrate or the substrate, described method for stamping comprises:
First measuring process, its measure the surface of described mould by measuring method and the surface that forms in position away from the surface of described mould between distance;
Second measuring process, it measures the distance between the surface of the described surface that forms in the position away from the surface of described mould and described substrate by measuring method; With
Calculation procedure, the distance between the surface of its surface by deducting the described mould of distance calculation in first measuring process, measured from the distance of second measuring process, measuring and described substrate.
According to further aspect of the present invention, a kind of mould that is used in the imprinting apparatus that comprises optical measuring apparatus is provided, it comprises:
Constitute first element on the surface of described mould; With
Refractive index is different from second element of first element;
Wherein first element has 1/4 or above optical thickness of the light wavelength that is used for optical measurement.
According to further aspect of the present invention, provide a kind of pattern that will offer mould to be impressed into imprinting apparatus on the element on substrate or the substrate, described imprinting apparatus comprises:
Light source, the surface of the described mould of its usefulness photoirradiation and described substrate positioned opposite and the surface of described substrate;
First optical system, it is used for and will guides to the surface of the surface of described mould and described substrate from the photoconduction of described light source and will direct into spectroscope with the surface of measuring described mould and the distance between the surface of described substrate from these surperficial reflected light; With
Second optical system, it is used for and will guides to the surface of the surface of described mould and described substrate from the photoconduction of described light source and will direct into image pick up equipment with position in the plane on the surface of the surface of measuring described mould and described substrate from these surperficial reflected light;
Shared their part of optical axis of first optical system and second optical system wherein.
Following description by considering the preferred embodiments of the present invention in conjunction with the accompanying drawings is with more apparent these and other targets of the present invention, feature and advantage.
Description of drawings
Fig. 1 is the synoptic diagram that shows the structure example that is used in the imprinting apparatus in the embodiments of the invention 1.
Fig. 2 (a)-2 (c) is the synoptic diagram that is used to illustrate measuring principle when wideband light source is used in the embodiments of the invention 1, wherein Fig. 2 (a) has shown the state that three crests and three troughs are arranged in measuring wave-number range, Fig. 2 (b) has shown the state that two crests and two troughs are arranged in measuring wave-number range, Fig. 2 (c) has shown the state that has only a crest and a trough in measuring wave-number range.
Fig. 3 (a) and 3 (b) are used for being illustrated in the synoptic diagram of measuring method that embodiments of the invention 1 use the rear surface of mould, wherein Fig. 3 (a) has shown that the first surface of mould and the surface of resin material are oriented to state separated from one another, and Fig. 3 (b) has shown the first surface of mould and the state that the resin material surface contacts with each other.
Fig. 4 (a)-4 (c) is the synoptic diagram that shows the structure of the mould in the imprinting apparatus that is used in the embodiments of the invention 1, wherein Fig. 4 (a) has shown measurement zone (406) the scope situation from the first surface of mould to first rear surface of mould, Fig. 4 (b) has shown the situation of measurement zone scope from the first surface of mould to second rear surface of mould, and Fig. 4 (c) shown another example of the structure of Fig. 4 (b).
Fig. 5 (a) and 5 (b) are the synoptic diagram that shows the structure of the mould in the imprinting apparatus that is used in the embodiments of the invention 2, wherein Fig. 5 (a) has shown the situation of mould by first element and second component construction, and Fig. 5 (b) has shown another embodiment of the mould shown in Fig. 5 (a).
Fig. 6 (a) and 6 (b) are used for being illustrated in the synoptic diagram that embodiments of the invention 2 use the gap measuring method of the mould that comprises first transparent element and second transparent element, wherein Fig. 6 (a) has shown the first surface of mould and the state surperficial separated from one another of resin material, and Fig. 6 (b) has shown the first surface of mould and the state that the resin material surface contacts with each other.
Fig. 7 (a) and 7 (b) are used for being illustrated in embodiments of the invention 3 with before resin material contacts and use the gap measuring method of Different Light afterwards, wherein Fig. 7 (a) has shown the first surface of mould and the state surperficial separated from one another of resin material, and Fig. 7 (b) has shown the first surface of mould and the state that the resin material surface contacts with each other.
Fig. 8 shows U.S. Patent No. 6,696, the synoptic diagram of the conventional embodiment described in 220.
Fig. 9 (a)-9 (d) is the synoptic diagram of structure that is used for illustrating the optical system of embodiments of the invention 4, wherein Fig. 9 (a) has shown optical system that is used for position in the measurement plane and the part structure coaxially to each other that is used for the optical system of measuring distance, Fig. 9 (b) has shown that the optical system that is used for measuring distance comprises the structure of barrier film, Fig. 9 (c) shown and has been used for the structure that the optical system of position in the measurement plane comprises second imaging optical system, and Fig. 9 (d) has shown that the optical system that is used for measuring distance has can be along the structure perpendicular to the driven mechanism of direction of optical axis.
Figure 10 (a) and 10 (b) are the synoptic diagram that shows the convergence portion in the embodiments of the invention 4, and wherein Figure 10 (a) has shown optical fiber and retaining part, and Figure 10 (b) has shown the element that has a plurality of openings.
Figure 11 (a)-11 (e) is the synoptic diagram that shows the state of the alignment mark that arrives by the optical system observing in the embodiments of the invention 4, wherein Figure 11 (a) has shown the range observation district that is included in center, the visual field and the structure of the mark zone in position measurement district in the plane at another part place, Figure 11 (b) is the sectional view that obtains along the AA ' line shown in Figure 11 (a), Figure 11 (c) is the sectional view that obtains along the AA ' line shown in Figure 11 (a) and has shown and be different from the embodiment shown in Figure 11 (b), Figure 11 (d) has shown and has comprised that the structure of implementing the mark zone in the zone of position measurement in range observation and a part of plane, Figure 11 (e) have shown the structure of the mark that is used to implement three-dimensional position measuring.
Figure 12 (a) and 12 (b) are presented at the process flow diagram that is used to the sequence of operation implementing to aim in the embodiments of the invention 4, wherein Figure 12 (a) has shown the sequence of implementing three axis Position Control with a plurality of marks, and Figure 12 (b) has shown the sequence with single labelled enforcement three axis Position Control.
Embodiment
(embodiment 1)
In embodiment 1, with the structure example of describing according to imprinting apparatus of the present invention.
Fig. 1 has shown the structure example of the imprinting apparatus among the embodiment 1.
With reference to figure 1, imprinting apparatus comprises travel mechanism 105 in exposure light source 101, mould retaining part 102, workpiece retaining part 103, workpiece pressing mechanism 104, the plane, optical system 106, measurement light source 107, beam splitter 108, spectroscope 109, image pick up equipment 110, analyzer 111, impression control gear 112, mould 113, photocurable resin material 114 and substrate 115.
By the way, workpiece pressing mechanism 104 can be monitored by scrambler along the position of short transverse.Scrambler can have 100nm or following precision ideally.The control that move position with respect to workpiece, pressure applies and expose is implemented by impression control gear 112.
Further, imprinting apparatus also can comprise the detection system (not shown) that is used to implement aligning in the plane.
Then, with the clearance measurement mechanism of describing among this embodiment.
Clearance measurement mechanism among this embodiment comprises optical system 106, measurement light source 107, beam splitter 108, spectroscope 109, image pick up equipment 110 and analyzer 111.
The light source of the broadband light of 400nm-800nm constitutes measurement light source 107 by for example sending.
The light that sends from measurement light source 107 passes optical system 106 arrival mould 113, photocurable resin material 114 and substrates 115.Described light is interfered among mould 113, photocurable resin material 114 and substrate 115.Interference light returns optical system 106 then and arrives spectroscope 109.The light of spectroscope 109 scatterings is observed by the image pick up equipment 110 such as line sensor.
Here, by additional beam splitter being offered optical system, also optical system can be divided into the optical system that is used to implement the optical system of clearance measurement and is used to implement to aim in the plane (position adjustments).As a result, can implement independently to aim at and clearance measurement in the plane by less optical system.
Then, will the measuring principle of film thickness and clearance distance be described.At first, will method that use narrow-band light source be described.
As such light source, laser, LED etc. are arranged.Further, also can use the wideband light source that has wave filter.
Here, film has thickness d and refractive index n, considers two catoptrical situations of end surfaces at film.
Under the situation that light intensity reduces, wave number k
MoAnd wavelength X
MoRepresent by the following relationship of using arbitrary integer m.
Further, under the situation that light intensity increases, wave number k
MeAnd wavelength X
MeRepresent by the following relationship of using integer m.
As mentioned above, light intensity changes according to wave number and wavelength period ground, makes it for all periodically changing with half each corresponding distance of wavelength.For example, be 600nm and refractive index n when being 1.5 when measuring wavelength, the period of change of light intensity is 200nm.
In order to measure the distance less than this cycle, for example, scrambler has the precision of about 100nm.Further, when the sum of the deviations of the initial position of die surface and substrate surface is in 100nm, can Measurement die and substrate between absolute distance.
Then, under the situation of measurement light source 107 in this embodiment, will describe by using wideband light source to determine the method for the absolute distance in the thickness of film and gap.As wideband light source, can use halogen light source, xenon light source etc.
The synoptic diagram that shows the relation between wave number and the light intensity when Fig. 2 (a)-2 (c) is when refractive index separately and film thickness differs from one another separately.
Fig. 2 (a) has shown the state that three crests and three troughs are arranged in measuring wave number (scope).Fig. 2 (b) has shown the state that two crests and two troughs are arranged in measuring wave number.Fig. 2 (c) has shown the state that single crest and single trough are arranged in measuring wave number.
Film among Fig. 2 (a)-2 (c) has refractive index n respectively
a, n
bAnd n
c, and have thickness d respectively
a, d
bAnd d
cIn Fig. 2 (a) and 2 (b), reference number 201 and 202 is represented the peak-to-peak distances of adjacent wave and is respectively 1/2n
ad
aAnd 1/2n
bd
bIn Fig. 2 (c), reference number 203 is represented the distance between adjacent peaks and the trough and is 1/4n
cd
cBased on these values, can be by frequency analysis Fourier transform and for example with respect to peak value detection computations optical length (distance) nd of crest and crest or crest and trough.
The minimum value that can measure wave number is regarded as k
L=1/ λ
LAnd the maximal value that can measure wave number is regarded as k
M=1/ λ
MFurther, suppose that for the purpose of simplifying the description refractive index does not depend on wavelength.Do not consider to make the light that passes the upper end to reflect in the lower end reflection and then in top and bottom to leave the repeatedly influence of reflection of film yet.
For example, as concrete numerical example, can consider d
a=800nm, d
b=500nm, d
c=300nm, n=1.4, k
L=1/400, and k
M=1/800 situation.
In the method for this embodiment, the number of crest and trough reduces when the less thick of film, makes that acquisition can be measured minimum thickness d when m=0
MinAnd by following formulate.
When the value in the above-mentioned numerical example was applied in the formula, can measure minimum thickness was 71nm.
Then, when considering film by two-layer the composition, light is reflected on the respective end surface.For example, has thickness d respectively when two-layer
aAnd d
bThe time, the summation of the spectrum of Fig. 2 (b) of the spectrum of Fig. 2 of multiplication by constants (a) and multiplication by constants obtains by the light that use has enough wide frequency band.
Implement frequency analysis by the summation of using spectrum, at three position n
ad
a, n
bd
bAnd n
ad
a+ n
bd
bThe place produces peak value.
Further, film by three layers of situation about forming under, the summation enforcement frequency analysis of the spectrum by using Fig. 2 (a), 2 (b) and 2 (c), peak value appears at six position n
ad
a, n
bd
b, n
cd
c, n
ad
a+ n
bd
b, n
bd
b+ n
cd
cAnd n
ad
a+ n
bd
b+ n
cd
c
By the way, in this embodiment, optical interference measurement still also can be used the method for utilizing ellipsometry as measuring method.In using the method for ellipsometry, observe incident light and catoptrical polarized state to obtain the distance etc. between film thickness, mould and the substrate.
Then, with the gap measuring method of describing among this embodiment.
The application conditions of this method is the coherent length that is shorter than light from the rear surface of mould to the optical length of the front surface of substrate.When optical length is longer than coherent length, can interfere with each other at the light of the front surface place of the rear surface of mould and substrate reflection, thereby be immeasurablel.
By the way, coherent length L can be by following formulate:
Wherein c represents the light velocity, and of represents frequency, and δ f represents spectrum width.By the way, this formula is revised by c=f λ.Further, the maximum wavelength in the λ 1 expression spectrum, the minimum wavelength in the λ 2 expression spectrum.
For example, when λ 1 and λ 2 were approximately equal to 400nm and λ 1-λ 2=0.01nm, coherent length was 16nm.In this case, when mould had the thickness of 6mm, mold thickness was less than coherent length, so the measurement of allowable clearance (distance between mould and the substrate).
Then, will mould and the position of substrate and the relation between the interference light (coherent light) be described.
Fig. 3 (a) is the synoptic diagram of the state that shows that mould and resin material do not contact with each other.In this state, broadband light enters mould and reflects at the rear surface 301 of mould, first surface 302, resin material surface 303 and substrate surface 304 places of mould.Reflected light separately interferes with each other shown in reference number 305 and the return measurement system.
Here, the distance between the first surface of the rear surface of mould and mould (pattern is formed at the there) is regarded as d
1, first substrate of mould and the distance between the resin material surface are regarded as d
2, the distance between resin material surface and the substrate surface is regarded as d
3
In this case, when interference light was scattered and be subjected to frequency analysis, peak value appeared at six position n
1d
1, n
2d
2, n
3d
3, n
1d
1+ n
2d
2, n
2d
2+ n
3d
3And n
1d
1+ n
2d
2+ n
3d
3, n wherein
1The refractive index of expression mould, n
2The refractive index of expression air, n
3The refractive index of expression photocurable resin material.
Suppose that these refractive indexes do not change during impressing, can obtain apart from d by calculating
1, d
2And d
3By the way, these refractive indexes can be stored in advance in the storer of imprinting apparatus and can be by suitable reference.
Fig. 3 (b) is the synoptic diagram of the state that shows that mould and resin material contact with each other.
In this case, the refractive index of mould and resin material is closer to each other, makes in the reflection of the surface that forms pattern rare.For this reason, peak value appears at position n
1d
1+ n
3d
3
Then, the sequence that makes mould measurement clearance (between mould and the substrate) near the substrate time will be described in.
At first, the distance between mould rear surface and substrate surface is coherent length or above position, measures and store the thickness of mould.Then, make mould near substrate by the wavelength compressing mechanism.Implement the supervision of the distance between mould and the substrate by the scrambler of wavelength compressing mechanism.When making mould further when the substrate, mould is placed to substrate contacts.In this contact condition, peak value appears at position n
1d
1+ n
3d
3
By from the value n
1d
1+ n
3d
3Deduct the n of prior measurement
1d
1, can calculate d
3As a result, can determine substrate surface and form distance between the surface of pattern.
By using the method described in this embodiment, be subjected to n in advance
1d
1The optical axis of measurement identical with the optical axis of the measurement that during mould is near substrate, is subjected to distance.For this reason, can determine accurately that pattern forms the distance between substrate and the substrate surface.
When can control accurately pattern form between substrate and the substrate surface apart from the time, can also control the thickness of the remaining thin layer that forms by the resin material on the substrate accurately.As a result, can also in the subsequent etch process, improve the precision of pattern transfer to the substrate.
Further, under the situation of value near the refractive index of resin material of the refractive index of the material that constitutes die surface, when mould and resin material contact with each other, be difficult to obtain reflectance spectrum from the border surface between them.For this reason, in the conventional method that mould rear surface or analog are measured, be difficult to measured pattern and form distance between surface and the substrate surface.Yet in this embodiment, the rear surface of mould is also measured, though make also can the Measurement die surface under the situation that mould and substrate contact with each other and substrate surface between distance.
The intensity spectrum of light source is not flat, further preferably in advance cuts apart enforcement normalization between measured intensity spectrum and spectrum by carrying out measuring light and the intensity spectrum.As a result, can be with more high precision enforcement frequency analysis.
Further, further preferably clearance measurement mechanism is located at three or three and locates with top.As a result, can detect the inclination between mould and the substrate, the feasible depth of parallelism that can also regulate between mould and the substrate.
As the other method of regulating the depth of parallelism between mould and the substrate, it also is preferred being used for along the driving mechanism of direction driving optical system in the plane.As a result, can be in direction traverse measurement light in the plane measurement clearance.For example, can detect the inclination between mould and the substrate by the point that moves at initial point, along directions X with along the some place measurement clearance that the Y direction moves.As a result, can regulate the depth of parallelism.
The structure that in Fig. 4 (a)-4 (c), has shown mould among this embodiment.In these figure, first element 401 constitutes the main body of moulds and for example quartz glass (n: be approximately equal to 1.5) or sapphire (n: be approximately equal to 1.8) form by transparent material.
Fig. 4 (a) has shown and has used mould front surface 402 and mould rear surface 403 mold structure as surface measurements.Rectangle region 406 is measurement zones of being measured.
Fig. 4 (b) has shown that the surface 405 of using between mould front surface 402 and mould rear surface 403 replaces the mold structure of mould rear surface 403 as surface measurements.Similar with Fig. 4 (a), rectangle region 406 is measurement zones of being measured.This is configured in pattern and forms distance between surface 402 and the mould rear surface 403 to be longer than under the situation of coherent length be effective.Yet in this case, pattern forms surface 402 and the surface distance between 405 and need be shorter than coherent length.
Fig. 4 (c) has shown another embodiment of Fig. 4 (b), and rectangle measurement zone 406 is positioned at the depressed part office.
By the way, mould front surface, mould rear surface 403 and surface 405 can be plane surfaces ideally.
(embodiment 2)
In embodiment 2, with the measuring method of the border surface between two elements of description use as mould and this mould of use of surface measurements.This embodiment is useful, and it also is suitable under the situation of mold thickness even reason is to be shorter than in coherent length.
Fig. 5 (a) has shown and has used the mold structure of two border surfaces between the element as surface measurements.This mould is made of first element 401 and second mould 407.Border surface between these first elements 401 and second element 407 is by reference number 408 indications.Further, first element 401, second element 407 are made of the different material of refractive index with the photocurable resin material.
As the material that is used for second element 407, can use titanium dioxide (n: be approximately equal to 2.4), ITO (n: be approximately equal to 2), silicon nitride (n: be approximately equal to 2) etc.Further, represent with optical length, the thickness of second element 407 can be desirably measure wavelength 1/4 or more than.
Fig. 5 (b) has shown another embodiment of Fig. 5 (a).In this embodiment, not only the part of teat but also contiguous this teat is formed by second element 407.
By the way, the border surface between first element 401 and second element 407 can be a plane surface ideally.
Then, will the method for the mould measurement clearance (between mould and the substrate) of using this embodiment be described.The part identical with embodiment 1 will be omitted explanation.
Fig. 6 (a) has shown the state that mould and resin material do not contact with each other.Surface shown in Fig. 6 (a) comprises border surface 502, resin material surface 503 and the substrate surface 504 between die surface 501, first element and second element.The broadband light that enters mould is on border surface 502, resin material surface 503 and substrate surface 504 places are reflected and separately reflected light interferes with each other and the return measurement system.
Here, the distance between die surface 501 and the border surface 502 is regarded as d
1, the distance between die surface 501 and the resin material surface 503 is regarded as d
2, the distance between resin material surface 503 and the substrate surface is regarded as d
3
When interference light was scattered and be subjected to frequency analysis, peak value appeared at six position n
1d
1, n
2d
2, n
3d
3, n
1d
1+ n
2d
2, n
2d
2+ n
3d
3And n
1d
1+ n
2d
2+ n
3d
3By from these peak values with reference to the refractive index data, can calculate d
1, d
2And d
3In this case, to form the distance between surface and the substrate surface be d to pattern
2+ d
3
Fig. 6 (b) has shown the state that mould and resin material contact with each other.Under the mould situation different, cause reflecting the border surface that also occurs between die surface and the substrate surface with the resin material refractive index.Therefore, peak value appears at position n
1d
1+ n
3d
3By deduct the n that measures in advance from this value
1d
1, can calculate d
3As a result, can determine that pattern forms the distance between surface and the substrate surface.
(embodiment 3)
In embodiment 1, described the coherent length of broadband light be longer than under the situation of mold thickness by utilize the mould rear surface as surface measurements Measurement die thickness to calculate the distance between die surface and the substrate surface.
Further, in embodiment 2, can calculate distance between die surface and the substrate surface as surface measurements by using the border surface between two elements even described under the situation that coherent length in broadband light is shorter than mold thickness also.
Yet in these embodiments, be shorter than mold thickness and second element can not offer under the situation of mould in the coherent length of broadband light, have such problem, that is, the distance between die surface and the substrate surface can not be measured.
In embodiment 3, the measuring method that description is addressed this is that.
Fig. 7 (a) is the synoptic diagram that shows the contactless state of mould and resin material.The broadband light that enters mould in mould rear surface 601, mould front surface 602, resin material surface 603 and substrate surface 604 places are reflected.Reflected light separately interferes with each other shown in reference number 605 and the return measurement system.
When interference light was scattered and be subjected to frequency analysis, peak value appeared at three position n
2d
2, n
3d
3And n
2d
2+ n
3d
3In embodiment 1, six peak values occur, yet in embodiment 3, three peak values only occur.This is because mold thickness is greater than the coherent length of broadband light in embodiment 3.
By from these three peak values with reference to the refractive index data, can distinguish computed range d
2And d
3In this embodiment, the distance between die surface and the substrate surface is d
2+ d
3Carry out measuring method and contact substrate up to mould.Distance when mould and substrate contact with each other between die surface and the substrate surface is regarded as dc.
Fig. 7 (b) is the synoptic diagram that shows the contact condition of mould and resin material.In this state, the light that enters mould becomes laser from broadband light.Compare with broadband light, laser has longer coherent length., be shorter than in the distance between mould rear surface and the substrate surface under the situation of coherent length of laser, laser is in mould rear surface 601 and substrate surface 604 places are reflected and separately reflected light interferes with each other shown in reference number 606 for this reason.
When mould during, interfere light intensity to change near substrate surface sinusoidally.More specifically, when Wavelength of Laser was regarded as λ, the cycle of laser was λ/2n.Therefore, can be by the intensity of calculated rate and the peak value range estimation amount displacement L of intensity.By implementing aforesaid measurement, can pass through the distance between formula: dc-L calculating die surface and the substrate surface.
By the way, in the above description, be changed to laser from broadband light and implement at die surface and resin material period of contact, but also can with enforcement before resin material contact.
Method for stamping among this embodiment is characterised in that by implementing irradiation with the light of first frequency band and comes first measuring process of the distance between Measurement die surface and the substrate surface, by exposure light is become the light of second frequency band that is narrower than first frequency band and implements irradiation with the light of second frequency band and come second measuring process of the displacement of Measurement die from the light of first frequency band, and deduct the step that the distance of measuring in second measuring process is calculated the distance between die surface and the substrate surface by the distance of from first measuring process, measuring.
Further, imprinting apparatus among this embodiment comprises: be used for the distance between Measurement die surface and the substrate surface and have first light source of first frequency band, secondary light source with second frequency band that is narrower than first frequency band, be used for and guide to die surface and substrate surface and reflected light is directed into spectroscopical optical system from the photoconduction of first light source and secondary light source, be used for the spectroscope of the light that scattering guided by optical system, and be used to analyze the analyzer of the distance between die surface and the substrate surface.Described analyzer is characterised in that from by using first light source to implement die surface that irradiation obtains and the distance between the substrate surface and calculating distance between die surface and the substrate surface by the displacement of using secondary light source to implement the mould that irradiation obtains.
(embodiment 4)
In embodiment 4, use description to implement the constructed embodiment of a part of coaxial arrangement of the optical system of position measurement (XY θ) in range observation (Z) between die surface and the substrate surface and the plane.
Fig. 9 (a) has shown the optical system among this embodiment.The light that sends from light source 802 passes first beam splitter 809 and the first image optics device, 805 arrival mould 806 and substrates 807.Light by mould and substrate reflection returns the first image optics device 805.On the other hand, pass light that first beam splitter 809 arrives second beam splitter 808 respectively along towards optical convergence part 803 that is used for range observation and the direction bifurcated that is used for the image pick up equipment 801 of position measurement in the plane.The light that arrives optical convergence part 803 arrives spectroscope 810 by waveguide (for example optical fiber or analog).
The information of neighborhood that image pick up equipment 801 and optical convergence part 803 are arranged in the focus of the first image optics device 805 forms the position of image.By the way, shared from the optical axis 804 of substrate 807 to second beam splitters 808 by position measuring system in Range Measurement System and the plane.Especially, nano impression is the method that mould and pattern Processing have 1: 1 size ratio.For this reason, there is the feasible space afterwards, rear surface that is difficult to fully guarantee mould of limiting factor.In other words, when the optical system that is used to implement range observation with the optical system that is used to implement position measurement in the plane when preparing respectively, not only be difficult to these optical systems are placed on after the rear surface of mould together, and be difficult to implement simultaneously position measurement in range observation and the plane.In such state, be difficult to prevent the error of the range observation that the mould that causes owing to temperature variation, vibration etc. and the position deviation between the substrate cause.On the other hand, in this embodiment, optical system is made and can eliminate above-mentioned limiting factor by shared.
Fig. 9 (b) has shown the structure of the NA of position measuring system in the numerical aperture (NA) that is used to change Range Measurement System and the plane.This structure comprises the barrier film 811 that is arranged between second beam splitter 808 and the optical convergence part 803.Planar in the position measurement, bigger NA provides higher resolution and the positional accuracy measurement of Geng Gao.On the other hand, in range observation, littler NA may be favourable for the influence of eliminating aberration.In this case, the structure of this embodiment is effective.
Fig. 9 (c) has shown the structure of the optical magnification of position measuring system in the optical magnification that is used to change Range Measurement System and the plane.The second image optics device 812 is arranged between second beam splitter 808 and the image pick up equipment 801.Planar in the position measurement, higher magnification can allow more high-precision position measurement.On the other hand, preferably Range Measurement System has little NA and less optical system so that eliminate the influence of aberration.In this case, the structure of this embodiment is effective.
Fig. 9 (d) has shown the structure of the measurement that is used to implement the inclination between die surface and the substrate surface.In the structure of this embodiment, be used for being arranged in image space along the driving mechanism 813 that moves optical convergence part 803 perpendicular to the in-plane of optical axis.By when moving optical convergence part 803, implementing range observation, can detect the inclination between die surface and the substrate surface along in-plane.
Here, will be with reference to the structure of Figure 10 (a) and 10 (b) description optical convergence part 803.In Figure 10 (a), optical convergence part 803 is made of optical fiber 901 and holding element 802.The also antireflective film of the reflection that can be provided for suppressing unnecessary around holding element 902.Further, the shape of holding element 902 also can be taper so that do not make light return measurement part.
Figure 10 (b) has shown the element 904 that has a plurality of openings 903.The arrangements of elements that has a plurality of openings at imaging surface is between the optical convergence part 803 shown in Fig. 9 (a) and second beam splitter 808.By a plurality of optical fiber and switch openings are provided at opening, can be in a plurality of planes the position measuring distance.As a result, can calculate inclination between die surface and the substrate surface.
Then, with reference to Figure 11 (a)-11 (c), use description to carry out simultaneously the spatial position measuring mark zone of position measurement in range observation between die surface and the substrate surface and the plane.In these figure, the forward of z axle be regarded as along as shown in Figure 11 (a) on drawing the direction from the rear side to the front side.Further, by the circle 1004 of dotted line indication be by optical system observing to the visual field.
Figure 11 (a) shows that mould and substrate are positioned at the synoptic diagram of the state of basic expection relative position.The spatial position measuring mark zone is made of position measurement district 1005 in the first range observation district 1003 and the plane.The first range observation district 1003 is corresponding to the center in the visual field of optical system.Planar in the position measurement district 1005, a plurality of mould mark composed components 1001 and a plurality of substrate mark composed component 1002 have been arranged.A plurality of mould mark composed components 1001 are arranged between the adjacent molds mark composed component along x direction layout and a plurality of substrate mark composed component.By the way, when the interval between mould mark composed component 1001 and the adjacent substrate mark composed component equals adjacent spaces, determine position alignment in the plane of mould and substrate.In the spatial position measuring mark zone, can be along aiming at along direction in the plane of die surface (x axle) with perpendicular to two axle enforcing locations of the direction (z axle) of direction in the plane.
Figure 11 (b) is the sectional view that obtains along the AA ' line shown in Figure 11 (a).The mould mark is made of the composed component 1006 with outstanding structure and the substrate mark is made of the composed component 1007 with sunk structure.In the range observation district, die surface is in the height level identical with the top surface of the outstanding structure of mark and substrate surface and is in the identical height level of top surface with the outstanding structure of mark, and making does not provide the frontier district especially.
Figure 11 (c) is another sectional view that obtains along the AA ' line shown in Figure 11 (a), and wherein the sunk structure of the outstanding structure of mould and substrate becomes inverse relationship with respect to the situation of Figure 11 (b).By the way, these structures can be outstanding structure or sunk structure.
Further, in the range observation district, one of mould mark and substrate mark or both also can have sunk structure.
Figure 11 (d) has shown the structure that the part in position measurement district 1005 in second distance measurement zone 1010 and the plane overlaps each other.
Figure 11 (e) has shown the structure that can implement the mark of position measurement in the three-dimensional planar.According to this structure, range observation can be implemented the center in the visual field on three axles.Further, by implementing range observations at peripheral part 1011, can the Measurement die surface and substrate surface between inclination.
Then, use description to implement simultaneously the sequence of position measurement in range observation between die surface and the substrate surface and the plane.
Figure 12 (a) show to use the marker configurations shown in Figure 11 (a) and 11 (d) to carry out the position control plane in and apart from the process flow diagram of the sequence of controlling.Under the situation of implementing the three-dimensional position aligning, this combination of mark and optical system is located at two or more positions.
At first, at step S1-1, make mould near substrate.In this case, scrambler or the analog of the distance between mould treatment surface and the substrate surface by using motor carries out coarse adjustment and is set to for example about tens microns.In step S1-2, selected marker.In step S1-3, implement range observation, in step S1-4, (1) determines whether to satisfy condition.Condition (1) for example is that distance error with respect to desired distance is in several nanometers.When not satisfying condition (1), in step S1-5, implement distance control.When satisfying condition (1), in step S1-6, implement position measurement in the plane.In step S1-7, (2) determine whether to satisfy condition.Condition (2) for example is that site error is in several nanometers.When not satisfying condition (2), in step S1-8, implement position control in the plane.When satisfying condition (2), in step S1-9, determine condition (3).Condition (3) for example comprises (a) underlined not measuring, (b) as the result of underlined measurement, must further make mould near substrate and (c) as the result of underlined measurement, the distance between mould treatment surface and the substrate reaches final value.Under the situation of (a), sequence enters step S1-2, implements the measurement of another mark in this step.Under the situation of (b), sequence enters step S1-10, and the distance in this step between mould treatment surface and the substrate surface reduces by small movements, makes the reducing from tens nm to hundreds of nm of distance.Under the situation of (c), EOS.
Figure 12 (b) shows the process flow diagram of implementing the sequence of three-dimensional position aligning by single labelled and single optical system.
At first, in step S2-1, be similar to the situation of Figure 12 (a), make mould near substrate by moving (1).Then, in step S2-2, measure the distance between them.This range observation is implemented in a plurality of positions.In step S2-3, calculate the inclination between mould treatment surface and the substrate surface.In step S2-4, determine distance and the inclination error condition (1) in several nanometers.When not satisfying condition (1), in step S2-5, implement distance control.When satisfying condition (1), in step S2-6, implement position measurement in the plane.In step S2-7, determine the condition (2) of in place position error in several nanometers.When not satisfying condition (2), in step S2-8, implement position control in the plane.When satisfying condition (2), in step S2-9, determine condition (3).Condition (3) is whether the distance between mould treatment surface and the substrate surface is final distance.When satisfying condition (3), EOS.When not satisfying condition (3), sequence enters step S2-11, reduces the distance between mould treatment surface and the substrate surface in this step.By the way, even under the situation of using two-dimensional marker, also can further improve precision by observing a plurality of marks by means of a plurality of optical systems.
Industrial applicibility
According to the present invention, can provide more accurately Measurement die surface and substrate surface it Between imprinting apparatus, method for stamping and the impressing mould of distance.
Claims (according to the modification of the 19th of treaty)
1. the pattern that will offer mould is impressed into the imprinting apparatus on the element on substrate or the substrate, and described imprinting apparatus comprises:
Light source, the surface of the described mould of its usefulness photoirradiation and described substrate positioned opposite and the surface of described substrate;
Optical system, it is used for and will guides to the surface of the surface of described mould and described substrate from the photoconduction of described light source and will direct into spectroscope from these surperficial reflected light;
Spectroscope, it is used for the reflection light diffusing of described optical system guiding is become spectrum; With
Imageing sensor, it is used to observe the light of described spectroscope scattering;
Analyzer, it is based on the distance between the surface of the surperficial and described substrate of the described mould of information analysis of described imageing sensor acquisition;
First distance of the distance between the described surface that the information analysis that wherein said analyzer obtains based on the light of the surface reflection of sending from described light source and forming by the surface of described mould with in the position away from the surface of described mould forms as the surperficial of described mould with in the position away from the surface of described mould;
Wherein said analyzer is based on the second distance of the information analysis of sending from described light source and being obtained by the light of the surface reflection of described surface that forms in the position away from the surface of described mould and described substrate as the distance between the surface of described surface that forms in the position away from the surface of described mould and described substrate; And
Wherein said analyzer by deducting the described mould of first distance calculation from second distance the surface and the distance between the surface of described substrate.
2. device according to claim 1, wherein the described surface that forms in the position away from the surface of described mould is the rear surface of described mould.
3. device according to claim 1, wherein the described surface that forms in the position away from the surface of described mould is located between the rear surface of the surface of described mould and described mould.
4. device according to claim 1, wherein the described surface that forms in position away from the surface of described mould be constitute described mould the surface first element and comprise interface between second element of the material that refractive index is different with the material of first element.
5. the pattern that will offer mould is impressed into the method for stamping on the element on substrate or the substrate, and described method for stamping comprises:
First measuring process, its measure the surface of described mould by measuring method and the surface that forms in position away from the surface of described mould between distance;
Second measuring process, it measures the distance between the surface of the described surface that forms in the position away from the surface of described mould and described substrate by measuring method; With
Calculation procedure, the distance between the surface of its surface by deducting the described mould of distance calculation in described first measuring process, measured from the distance of described second measuring process, measuring and described substrate.
6. the measuring method in the method according to claim 5, the measuring method in wherein said first measuring process and described second measuring process uses identical optical axis.
7. method according to claim 5, wherein the described surface that forms in the position away from the surface of described mould is the rear surface of described mould.
8. method according to claim 5, wherein the described surface that forms in the position away from the surface of described mould is located between the rear surface of the surface of described mould and described mould.
9. method according to claim 5, wherein the described surface that forms in position away from the surface of described mould be constitute described mould the surface first element and comprise interface between second element of the material that refractive index is different with the material of first element.
10. method according to claim 5, wherein the measuring method in described first and second steps uses optical interdferometer.
11. a mould that is used in the imprinting apparatus according to claim 1, it comprises:
Constitute first element on the surface of described mould; With
Refractive index is different from second element of described first element;
Wherein said first element has 1/4 or above optical thickness of the light wavelength that is used for optical measurement.
12. the technology by use method for stamping production structure, it comprises:
Method for stamping according to claim 5.
13. the pattern that will offer mould is impressed into the imprinting apparatus on the element on substrate or the substrate, described imprinting apparatus comprises:
Light source, the surface of the described mould of its usefulness photoirradiation and described substrate positioned opposite and the surface of described substrate;
First optical system, it is used for and will guides to the surface of the surface of described mould and described substrate from the photoconduction of described light source and will direct into spectroscope with the surface of measuring described mould and the distance between the surface of described substrate from these surperficial reflected light; With
Second optical system, it is used for and will guides to the surface of the surface of described mould and described substrate from the photoconduction of described light source and will direct into image pick up equipment with position in the plane on the surface of the surface of measuring described mould and described substrate from these surperficial reflected light;
Shared their part of optical axis of wherein said first optical system and described second optical system.
14. device according to claim 13, wherein said second optical system has the numerical aperture greater than described first optical system.
15. device according to claim 13, wherein said second optical system has the magnification greater than described first optical system.
16. the technology by use imprinting apparatus production structure, it comprises:
Use imprinting apparatus according to claim 13.
Claims (15)
1. the pattern that will offer mould is impressed into the imprinting apparatus on the element on substrate or the substrate, and described imprinting apparatus comprises:
Light source, the surface of the described mould of its usefulness photoirradiation and described substrate positioned opposite and the surface of described substrate;
Optical system, it is used for and will guides to the surface of the surface of described mould and described substrate from the photoconduction of described light source and will direct into spectroscope from these surperficial reflected light;
Spectroscope, it is used for the reflection light diffusing of described optical system guiding is become spectrum; With
Analyzer, it is used to analyze the distance between the surface of the surface of described mould and described substrate;
Wherein said analyzer by measuring described mould the surface and the distance between the surface of the surface of the described mould of distance calculation between the surface that forms in position and described substrate away from the surface of described mould.
2. device according to claim 1, wherein the described surface that forms in the position away from the surface of described mould is the rear surface of described mould.
3. device according to claim 1, wherein the described surface that forms in the position away from the surface of described mould is located between the rear surface of the surface of described mould and described mould.
4. device according to claim 1, wherein the described surface that forms in position away from the surface of described mould be constitute described mould the surface first element and comprise interface between second element of the material that refractive index is different with the material of first element.
5. the pattern that will offer mould is impressed into the method for stamping on the element on substrate or the substrate, and described method for stamping comprises:
First measuring process, its measure the surface of described mould by measuring method and the surface that forms in position away from the surface of described mould between distance;
Second measuring process, it measures the distance between the surface of the described surface that forms in the position away from the surface of described mould and described substrate by measuring method; With
Calculation procedure, the distance between the surface of its surface by deducting the described mould of distance calculation in described first measuring process, measured from the distance of described second measuring process, measuring and described substrate.
6. method according to claim 5, wherein the described surface that forms in the position away from the surface of described mould is the rear surface of described mould.
7. method according to claim 5, wherein the described surface that forms in the position away from the surface of described mould is located between the rear surface of the surface of described mould and described mould.
8. method according to claim 5, wherein the described surface that forms in position away from the surface of described mould be constitute described mould the surface first element and comprise interface between second element of the material that refractive index is different with the material of first element.
9. method according to claim 5, wherein the measuring method in described first and second steps uses optical interdferometer.
10. mould that is used in the imprinting apparatus that comprises optical measuring apparatus, it comprises:
Constitute first element on the surface of described mould; With
Refractive index is different from second element of described first element;
Wherein said first element has 1/4 or above optical thickness of the light wavelength that is used for optical measurement.
11. the technology by use method for stamping production structure, it comprises:
Method for stamping according to claim 5.
12. the pattern that will offer mould is impressed into the imprinting apparatus on the element on substrate or the substrate, described imprinting apparatus comprises:
Light source, the surface of the described mould of its usefulness photoirradiation and described substrate positioned opposite and the surface of described substrate;
First optical system, it is used for and will guides to the surface of the surface of described mould and described substrate from the photoconduction of described light source and will direct into spectroscope with the surface of measuring described mould and the distance between the surface of described substrate from these surperficial reflected light; With
Second optical system, it is used for and will guides to the surface of the surface of described mould and described substrate from the photoconduction of described light source and will direct into image pick up equipment with position in the plane on the surface of the surface of measuring described mould and described substrate from these surperficial reflected light;
Shared their part of optical axis of wherein said first optical system and described second optical system.
13. device according to claim 12, wherein said second optical system has the numerical aperture greater than described first optical system.
14. device according to claim 12, wherein said second optical system has the magnification greater than described first optical system.
15. the technology by use imprinting apparatus production structure, it comprises:
Use imprinting apparatus according to claim 12.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005302679 | 2005-10-18 | ||
| JP302679/2005 | 2005-10-18 | ||
| JP230222/2006 | 2006-08-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101292195A true CN101292195A (en) | 2008-10-22 |
Family
ID=40035642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006800389780A Pending CN101292195A (en) | 2005-10-18 | 2006-10-18 | Imprint apparatus, imprint method, and mold for imprint |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101292195A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103069251A (en) * | 2010-09-03 | 2013-04-24 | Ev集团E·索尔纳有限责任公司 | Device and method for reducing a wedge error |
| CN103279014A (en) * | 2013-06-14 | 2013-09-04 | 苏州苏大维格光电科技股份有限公司 | Device and method for preparing nano imaged substrate |
| TWI418950B (en) * | 2009-02-04 | 2013-12-11 | Asml Netherlands Bv | Imprint lithography |
| CN108037647A (en) * | 2017-12-18 | 2018-05-15 | 中国科学院光电技术研究所 | Real-time leveling system and method for proximity lithography machine |
| CN108036732A (en) * | 2017-11-30 | 2018-05-15 | 中国科学院光电技术研究所 | Gap detection device based on super-resolution lithography |
| CN108121171A (en) * | 2016-11-30 | 2018-06-05 | 佳能株式会社 | For adjusting the system and method for the position of template |
| CN109789659A (en) * | 2016-09-08 | 2019-05-21 | 博浩特股份公司 | Imprint mold for deforming smooth and embossed film |
| CN113777287A (en) * | 2021-08-30 | 2021-12-10 | 歌尔光学科技有限公司 | Method for testing curing shrinkage of glue |
-
2006
- 2006-10-18 CN CNA2006800389780A patent/CN101292195A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI418950B (en) * | 2009-02-04 | 2013-12-11 | Asml Netherlands Bv | Imprint lithography |
| US9194700B2 (en) | 2010-09-03 | 2015-11-24 | Ev Group E. Thallner Gmbh | Device and method for reducing a wedge error |
| CN103069251A (en) * | 2010-09-03 | 2013-04-24 | Ev集团E·索尔纳有限责任公司 | Device and method for reducing a wedge error |
| CN103279014A (en) * | 2013-06-14 | 2013-09-04 | 苏州苏大维格光电科技股份有限公司 | Device and method for preparing nano imaged substrate |
| CN103279014B (en) * | 2013-06-14 | 2016-01-20 | 苏州苏大维格光电科技股份有限公司 | Nano-patterned substrate preparation facilities and method |
| CN109789659A (en) * | 2016-09-08 | 2019-05-21 | 博浩特股份公司 | Imprint mold for deforming smooth and embossed film |
| CN109789659B (en) * | 2016-09-08 | 2021-10-12 | 博浩特股份公司 | Embossing die for deforming smooth or embossed films |
| CN108121171B (en) * | 2016-11-30 | 2021-02-19 | 佳能株式会社 | System and method for adjusting position of template |
| CN108121171A (en) * | 2016-11-30 | 2018-06-05 | 佳能株式会社 | For adjusting the system and method for the position of template |
| US10969680B2 (en) | 2016-11-30 | 2021-04-06 | Canon Kabushiki Kaisha | System and method for adjusting a position of a template |
| CN108036732A (en) * | 2017-11-30 | 2018-05-15 | 中国科学院光电技术研究所 | Gap detection device based on super-resolution lithography |
| CN108037647A (en) * | 2017-12-18 | 2018-05-15 | 中国科学院光电技术研究所 | Real-time leveling system and method for proximity lithography machine |
| CN113777287A (en) * | 2021-08-30 | 2021-12-10 | 歌尔光学科技有限公司 | Method for testing curing shrinkage of glue |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8047828B2 (en) | Imprint apparatus, imprint method, and mold for imprint | |
| CN100536073C (en) | Pattern forming method and pattern forming system | |
| CN101292195A (en) | Imprint apparatus, imprint method, and mold for imprint | |
| JP5591173B2 (en) | Imprint method and imprint apparatus | |
| CN101427185B (en) | Align method, imprinting method, align device and imprinting device | |
| US8770958B2 (en) | Pattern forming method and pattern forming apparatus in which a substrate and a mold are aligned in an in-plane direction | |
| US7884935B2 (en) | Pattern transfer apparatus, imprint apparatus, and pattern transfer method | |
| JP6884515B2 (en) | Position detection method, imprinting device and article manufacturing method | |
| JP4448191B2 (en) | Mold, imprint method, and chip manufacturing method | |
| JP4926881B2 (en) | Imprint apparatus and alignment method | |
| CN101454636A (en) | Gap measuring method, imprint method, and imprint apparatus | |
| CN101604124B (en) | Mold, pattern forming method, and pattern forming apparatus | |
| US20070231421A1 (en) | Enhanced Multi Channel Alignment | |
| US20070035056A1 (en) | Imprint apparatus and imprint method | |
| EP1526411A1 (en) | Apparatus and method for aligning surface | |
| US20130221556A1 (en) | Detector, imprint apparatus and method of manufacturing article | |
| JP2008008889A (en) | Gap measuring method, imprinting method, and imprinting system | |
| CN100526052C (en) | Imprint lithography with improved monitoring and control and apparatus therefor | |
| TWI460559B (en) | Level sensor arrangement for lithographic apparatus, lithographic apparatus and device manufacturing method | |
| CN113405471B (en) | Optical displacement sensor and optical displacement detection system | |
| TWI383466B (en) | An imprinting platform alignment and leveling measurement system | |
| KR20190107573A (en) | Position detection device, position detection method, imprint apparatus, and method for manufacturing article |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20081022 |