CN101290922A - System realizing three-dimensional interconnection between multi-systems - Google Patents
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Abstract
The invention belongs to the micro-electronic filed, in particular relating to a system for realizing 3D interconnection among a plurality of systems. The system comprises a data sampling and maintaining module, a radio frequency interface module, a time sequence control module and a multi-layered communication system, wherein, a non-contact interconnection structure among the plurality of systems is realized through deposition of transformers on areas on which each layer of communication system is interconnected and by utilization of silicon-based millimeter waves. Compared with the prior contact interconnection structure, the non-contact interconnection structure greatly reduces the problem of wastage of through holes and greatly improves the ability of the system in processing ultrahigh-frequency ultrahigh-speed signals. The system is completely compatible with the modern standard CMOS technique, does not need to customize a brand new mask plate, greatly reduces the complexity of the interconnection technique, and improves the stability and the reliability of multi-system ultrahigh-frequency ultrahigh-speed interconnection.
Description
Technical field
The invention belongs to microelectronic, be specifically related to a kind of ultrahigh speed hyperfrequency three-dimensional interconnection system that utilizes between silica-based millimeter wave realization multisystem.
Background technology
Along with electronic system develops to miniaturization, high performance, multifunction, low cost and high reliability, system on a ship just becomes the inexorable trend of development.Along with the integrated circuit integrated level improves constantly, device cell quantity on every sharply increases, chip area increases, and the growth of line not only influences circuit working speed but also takies a lot of areas between the unit, has a strong impact on integrated circuit and further improves integrated level and operating rate.Especially become the trend of current microelectronic chip development along with SOC (SOC (system on a chip)), traditional interconnection technique is owing to can't satisfy the interconnection loss problem of growth at full speed, not only take very big chip area, but also introduced a series of problems such as be coupled between high frequency delay, substrate loss and line.Integrated multisystem polycaryon processor on the sheet, the seamless data communication of high speed has proposed strict more requirement to interconnection between system between each system.
In order to improve integration density and to reduce outer lead, the three dimensional integrated circuits that formed by the multilayer device stack beginning of the eighties appearred in twentieth century, all isolates with insulating barrier between its each layer of circuit, and interconnects by perforation, can increase exponentially chip integration.Reached more than the tens layers at present, become one of the integrated major technique trend of generation multisystem polycaryon processor that faces down.
The overlay structure of three dimensional integrated circuits shortens the unit line, and makes parallel signal be treated as possibility, thereby realizes the high speed operation of circuit.Simultaneously, three dimensional integrated circuits can be realized novel multifunctional device and Circuits System, and especially along with nearly step of system works frequency is soaring, power system capacity integrated on the sheet further strengthens, and than traditional two-dimentional integrated circuit and system very big advantage is arranged.
Three dimensional integrated circuits is on high-density multi-layered interconnect die, the ultra micro processing technology will constitute the core circuit module and the system assembles of electronic circuit to adopt that brand-new molecular beam epitaxy, chemical vapor deposition and atom are moved etc., form the microelectronic product (comprising assembly, parts, subsystem, system) of high density, high-performance, high reliability.It is for adapt to short, little, light, the thin and high speed of contemporary electronic systems, high-performance, highly reliable, the microelectronics integrated technology of new generation that grows up of developing direction cheaply on the basis of two-dimentional SOC (system on a chip), is the integrated powerful measure of realization multisystem.The key of making three dimensional integrated circuits is SOI (Silicon-On-Insulator, the silicon on a dielectric substrate) technology.Development along with molecular beam epitaxy, chemical vapor deposition and atom such as move at the ultra micro process technology also will progressively realize in the inner three-dimensional of device layout that realizes of semiconductor chip, to produce the higher stereo integrated circuit of density.2004, Tezzaron Semiconductor company has researched and developed out the three-dimensional interconnection technology that is called Fastack, design is divided into two or more IC, suppose that memory is placed on the nude film, microcontroller is placed on another sheet, but in wafer fabrication processes, when die stack together the time, set through hole and interconnection by relevant position, createed short connection at two nude films.The three-dimension sensor of its making can possess 100% array efficiency, and two-dimensional device has only 40-50%.Three-dimensional storage had only for 2 nanoseconds postponed, and two dimensional memory is 25-40 nanosecond.Also fast 3 to 10 times of the speed of three-dimensional process device than two-dimensional device.In February, 2007, northeastern Japan university develops the three dimensional integrated circuits based on 10 layers of silicon chip lamination techniques, has broken the record of 3 chip laminates before this.
Along with the raising of system works frequency, the operating frequency of future communications system might surpass tens of GHz.At fiber optic communication field, communication system and the communication protocol of 60GHz emerge in an endless stream.And, use the millimetre-wave attenuator chipset of 60GHz frequency band to receive much concern at the wireless video transmission field of AV product in the microwave and millimeter wave field.The SiBEAM of risk company of California, USA announces in Tokyo that in June, 2007 new 60GHz band radio transmission system is born.The purpose of SiBEAM is that this chipset is provided in panel TV and the set-top box, realizes the non-compression transmission of being born by HDMI at present of HDTV wirelessly.As the part of the 4th generation communication system (4G), the 60GHz frequency range receives very big concern, especially, and GaAs (GaA
S) the field effect transistor Manifold technology can produce 60GH
ZGaA
SMMIC.Based on GaA
S60GH
ZEquipment can be ordered with the price of 10-20 dollar a slice such as low noise amplifier, high power amplifier, multiplier, switch etc., extensively utilizes microwave and millimeter wave communication to become inevitable trend.
In common three-dimensional interconnection technology, the Micrometer-Nanometer Processing Technology of the semiconducter IC by complexity, thick, film mixing composite material and technology, thick film, pottery is with the multilager base plate technology of PCB and combine other heat radiations and series of new techniques such as reliability design and encapsulation, thus realization analog circuit, digital circuit, power device, photoelectric device, microwave device and all kinds of chip type components and parts effective interconnection.Yet the delay of this moment several nanoseconds that traditional three-dimensional interconnection technology can realize has been not suitable for the future communications system, especially the needs of microwave level communication system communication.And along with the further raising of the integrated number of plies of three-dimensional and density, what the via process complexity of multilayer wiring will index is soaring, and crosstalking between circuit will sharply increase; The increase of packaging density must cause the rapid increase of the caloric value of unit chip area, and the reliability of highdensity through-hole interconnection also will worsen thereupon, and the performance of integrated circuit (IC) system will be subjected to great restriction.
Traditional interconnection is along with the raising of SOC (system on a chip) complexity, especially along with the extensive utilization of multisystem polycaryon processor and the continuous development of three dimensional integrated circuits stereoscopic multi-layer structure: there is following shortcoming in three-dimensional interconnection structure:
1. the area occupied of interconnection line is constantly soaring;
2. coupling and loss have become the bottleneck of SOC (system on a chip) performance boost between the intersystem communications time-delay that long interconnection line brings, system;
3. the reliability and stability problem of the connection of the through hole between different levels is quickened to worsen.
Especially under the ultra-high frequency, existing through hole manufacture craft has been difficult to satisfy high-speed communication requirement between the multisystem polycaryon processor.
The through-hole interconnection structure comprises passivation layer, metal interconnecting layer, surface device layer and layer-of-substrate silicon as shown in Figure 1 between traditional multiple layer metal; By at integrated active device of surface of silicon and circuit, adopt multiple layer metal technology to realize complicated circuit function then.Three dimensional integrated circuits schematic diagram towards follow-on communication system, as shown in Figure 2, three dimensional integrated circuits between a plurality of systems adopts the multilayer silicon fiml, every layer of silicon fiml separates with corresponding dielectric layer, integrated active device and circuit on every layer of silicon fiml, in each subsystem and silicon fiml inside, adopt traditional metal interconnect structure.Between each system, conventional now three dimensional integrated circuits adopts bonding or self-registered technology to realize the Metal Contact interconnection structure, and Fig. 3 represents the interconnection structure of A of system and the B of system layer.
This technology is along with the operating frequency of circuit and work system increases, and it is subject to existing via process, and the loss of inter-level interconnects sharply increases.Because the increase of via depth, the reliability and stability of through hole contact all can rapid deterioration.
Summary of the invention
The objective of the invention is to propose a kind of three-dimensional interconnection system that realizes between multisystem, solve the interconnection line loss problem of sharp increase under the high-frequency, improve the ability of microwave circuit and system handles hyperfrequency ultra high speed signal, and improve the reliability and stability of interconnecting unit under high-frequency.
Above-mentioned purpose of the present invention is to realize by the following technical solutions:
A kind of three-dimensional interconnection system that realizes between multisystem, comprise that data sampling keeps module, time-sequence control module, radio frequency interface module and multilayer communication system, every layer of communication system connects a data sampling and keeps module and time-sequence control module, is deposited with transformer on the zone of every layer of communication system interconnection; Described data sampling keeps module to be connected by radio frequency interface module with transformer; Each layer communication system utilizes transformer to produce and the launching simulation signal; Described data sampling keeps module to receive analog signal, and analog signal is converted into the digital signal of described communication system identification and processing; Described time-sequence control module keeps module by opening or close above-mentioned data sampling, controls the communication sequential of different level communication systems, realizes the noncontact interconnection between the multilayer communication system.
Further, above-mentioned radio frequency interface module comprises low noise amplifier and frequency mixer.
Further, above-mentioned data sampling keeps module to comprise analog to digital conversion circuit and power management module.
Further, the transformer adopting high resistant substrate of above-mentioned every layer of interconnect area, the insulating material of transformer bay dielectric layer deposit low-k; Utilize the copper wiring technique of top-level metallic, form the thick metal spiral induction structure of transformer; Transformer be shaped as circle or regular polygon, wire circle adopts 2 to 4 circles, live width adopts 2 to 6 microns, distance between centers of tracks is less than 2 microns; One guard ring is arranged on the transformer.
Advantage of the present invention and good effect are as follows:
(1) the present invention is as a kind of brand-new " noncontact interconnection " structure, and it reduces through hole loss problem greatly than traditional " contact interconnection " structure, has improved the ability of system handles hyperfrequency ultra high speed signal greatly;
(2) the present invention utilizes the high dynamic characteristic of high speed of silica-based millimeter wave, and adaptive surface is to the requirement of follow-on communication system on-chip interconnect from 12GHz to 60GHz, and the interconnection structure control logic is simple, module reuse rate height;
(3) compatible fully with contemporary standard CMOS technology, do not need to customize brand-new mask plate, reduced greatly in millimeter wave and the centimeter wave communications field the complicated requirement of interconnection structure;
(4) the present invention utilizes in the 3 D stereo multilayer mechanism integrated overlappedly, has the transformer of superior coupling performance, has reduced the complexity of interconnection process greatly, has improved the stability and the reliability of multisystem hyperfrequency ultrahigh speed interconnection.
Description of drawings
Through-hole interconnection structure between the traditional multiple layer metal of Fig. 1;
Wherein: 1----metal throuth hole interconnection structure; The 2----passivation layer;
The 3----metal interconnecting layer; 4----surface device layer;
The 5----layer-of-substrate silicon;
Fig. 2 is towards the three dimensional integrated circuits schematic diagram of next generation communication system;
Fig. 3 is traditional is used for three dimensional integrated circuits sublayer circuit and system interconnection structural representation;
Wherein: 1-metal throuth hole interconnection structure;
4--surface device layer; Dielectric layer between the 6--system;
The Metal Contact interconnection structure that 7--realizes by bonding, self-registered technology etc.;
The A of 8-system; The B of 9-system;
The silica-based millimeter wave that utilizes that Fig. 4 the present invention proposes is realized the structural representation that interconnects between multisystem;
The top plan view of the three-dimensional wide-band microwave transformer that Fig. 5 the present invention proposes;
Wherein: 10--produces and sends the three-dimensional wide-band microwave transformer device structure of silica-based millimeter wave; The 11-guard ring;
The silica-based millimeter wave interconnection structure profile that Fig. 6 the present invention proposes;
Wherein: dielectric layer between the 6-system;
10--produces and sends the three-dimensional wide-band microwave transformer device structure of silica-based millimeter wave;
The silica-based millimeter wave of 12--; 13--high resistant substrate is silica-based;
Double-deck transformer of Fig. 7 inserts the change curve of loss with operating frequency;
Realize the Principle of Communication schematic diagram of interconnection structure between multisystem among Fig. 8 the present invention;
Wherein: the silica-based millimeter wave of 12--; The 14--data sampling keeps module;
The three-dimensional interconnect structure of the silica-based millimeter wave of 15--.
Embodiment
Below in conjunction with accompanying drawing, describe the present invention:
The present invention proposes a kind of three-dimensional interconnection system that utilizes silica-based millimeter wave to realize ultrahigh speed hyperfrequency between multisystem, utilize hyperfrequency transformer device structure on the silicon chip, the step of compatible contemporary standard CMOS technology, keep module and time-sequence control module by the integrated data sampling, thereby realize " the noncontact interconnection " of multisystem.
The present invention utilizes silica-based millimeter wave to realize the structural representation of hyperfrequency ultrahigh speed interconnection between multisystem, as shown in Figure 4, during system X emission data, data sampling keeps module to receive analog signal, and the three-dimensional interconnection system produces silica-based millimeter wave by radio frequency interface module at three-dimensional wide-band microwave transformer.This silica-based millimeter wave is by the multi-layer transformer coupled structure, in the mode of frequency electromagnetic waves information transmitted is delivered to other communication system layers.
When system X receives data, the silica-based millimeter wave that this layer three-dimensional interconnection system produces by radio frequency interface module receiving transformer structure, produce analog signal and be delivered to data sampling maintenance module, the digital signal that data sampling keeps module that the analog signal conversion that receives can be discerned and be handled for the X of system.Work unification between multilayer system is subjected to the control of time-sequence control module, by the enable signal of time-sequence control module, opens or closes the data sampling holding circuit module of certain layer of communication system correspondence, thereby realize noiseless reception between each layer communication system.
(1) utilizes silica-based millimeter wave to realize the system of ultrahigh speed hyperfrequency three-dimensional interconnection between multisystem in the present embodiment,, prepare general communication circuit system and device at silicon chip surface by the preparation flow of standard CMOS process.The core circuit of the interconnecting parts between communication system mainly comprises time-sequence control module, sets up the radio frequency interface module (as low noise amplifier, frequency mixer) of the microwave regime of information interaction and the module (as analog to digital conversion circuit, power management module) of data sampling maintenance accordingly with the corresponding communication system.The zone that needs high-speed interconnect between every layer of communication system, deposit transformer, described time-sequence control module are controlled the communication sequential of different level communication systems, the interference of avoiding the high-speed data-flow between communication system to produce.
Because the ultrahigh speed hyperfrequency transfer of data between communication system is to propagate with the form of the little territory of silica-based millimeter wave net, the electromagnetic field of its high speed conversion can produce other communication systems and disturb.Therefore; present embodiment adopts guard ring to reduce the influence of electromagnetic field leakage to the electromagnetic susceptibility module in the communication system; making between the electromagnetic susceptibility module (as low noise amplifier, local oscillator etc.) of other communication systems and this interconnection system has good electromagnetic screen, as shown in Figure 5.
(2) be operating frequency range that guarantees transformer and the coupling loss that reduces transformer, the structure of above-mentioned transformer is as follows:
A) transformer adopting high resistant substrate can be chosen SOI substrate or porous silicon substrate or suspension substrate, be used to reduce the substrate eddy current loss under the extremely high frequency, and the inductive coupled effect of substrate is to the influence of interconnection circuit and system module;
B) utilize the copper wiring technique of top-level metallic, promptly pass through chemical vapor deposition CVD, technologies such as etching Etch form the thick metal spiral induction structure of transformer, top plan view as shown in Figure 5, the 3-D solid structure schematic diagram is as shown in Figure 6.
When adopting SOI substrate or porous silicon substrate, for preventing that copper is at silicon Si and silicon dioxide SiO
2Middle diffusion, deposition one deck barrier layer on metal throuth hole; And then the very thin copper of deposition one deck is as the conducting medium of plasma etching ECP, also as the crystal nucleation layer of the metallic crystal growth of electro-coppering; Producing copper electroplating layer by ECP, carry out chemical Mechanical Polishing Technique CMP then, mainly is to grind off unnecessary copper, simultaneously silicon chip surface is polished.
C) the transformer bay medium adopts novel advanced low-k materials (being the material of dielectric constant k＜3) as insulating material, with the high speed performance that guarantees device and control energy consumption, improve the coupling coefficient between different layers, improve under tens of GHz high-frequency signal by the bandwidth of operation and the operating rate of transformer.Described dielectric materials has the characteristic of low-loss, low current leakage, high adhesion force, high rigidity, corrosion resistance, low water absorbable and high stability.
For requiring than higher communication system, the transformer bay medium need adopt ferromagnetic-ferroelectric function material or ferromagnetic-partly lead functional material.Wherein: ferromagnetic-ferroelectric function material is a class at material internal coexist simultaneously ferroelectric phase and ferromagnetic functional material mutually, generally all have higher dielectric constant, higher magnetic permeability and permittivity (dielectric constant) are arranged, as BiFeO3 (Ba, Pb) (Ti, Zr) O3 based material.Ferromagnetic-partly lead functional material and be a class material internal have simultaneously ferromagnetism and semi-conductive ferromagnetic-partly lead functional material, higher magnetic permeability and high () stream transport factor that carries are arranged, as europium-sulphur (Eu-S) be and europium-selenium (Eu-Se) based material.Adopt ferromagnetic-partly lead functional material, can greatly improve the communication frequency of this interconnection structure, thereby expand its utilization scope in microwave regime, improve the sensitivity of communication.
D) selection of transformer process, show that according to 3 D electromagnetic field emulation experiment every layer of transformer shape optimum is circular (or positive polygons), wire circle adopts the 2-4 circle, live width adopts the 2-6 micron, and distance between centers of tracks adopts the minimum technology spacing (less than 2 microns) of thick-layer metal.Thereby reduce the displacement current that the coupling of inductive coupled eddy current effect of bringing of substrate and capacitive brings.
Generally speaking, along with the increase of number of inductor, the growth of live width, the dwindling of distance between centers of tracks, this interconnection structure maximum operation frequency scope and insert loss and also reduce thereupon, but the coupling coefficient between system will increase thereupon.Actual communication systems is formulated according to concrete spectrum requirement and rule of communication, the priority of communicating by letter between locking system and the requirement of data volume, thus choose the suitable hyperfrequency ultrahigh speed interconnection structure of interlayer.
(3) in communication process, adopt time division multiplexing mode between multisystem, as shown in Figure 8.Promptly according to the transmission characteristic of transformer between different layers and the requirement of transmission priority, under the control of the central control system of the control system of each interlayer and universe, by open or close the transmission of the silica-based millimeter wave between different layers or receive order, thereby the information of ultra-high frequency and ultraspeed is propagated between the realization system.In order to guarantee the consistency of global system clock, clock control module satisfies the communication protocol requirement of each interlayer communication system, as the center control command, comprise that clear command, enable command and mode of operation select command must be consistent in the time-delay of each interlayer interface, mutual error can not exert an influence to silica-based millimeter wave.
Fig. 7 utilizes the insertion loss of a double-deck transformer device structure of three-dimensional all-wave electromagnetic-field simulation instrument HFSS emulation along with the change curve of operating frequency.Emulation one 500 micron thickness SOI substrate, on the general silica dielectric layer, the circular coil of transformer adopting 2.5 circles, the live width of every circle is 6 microns, distance between centers of tracks is 2 microns, and the internal diameter of coil is 60 microns, and the interfloor distance of two-layer coil is 20 microns four end transformer modules up and down, interlayer inserts loss, promptly by the ground floor transformer unit to the loss (Insertion Loss) of second layer transformer unit change curve along with incoming frequency (Frequency).As seen, under the transformer parameter of setting, the coupling loss of transformer be 6dB only, and remains on extremely wide frequency range interior (5GHz-80GHz), only has ± fluctuation of 2.5dB.Emulation shows that the silica-based millimeter wave that utilizes that the present invention proposes realizes that the ultrahigh speed hyperfrequency interconnection operating frequency between multisystem can surpass 60GHz, and keeps the inter-level interconnects loss to be lower than 10dB, all has irreplaceable advantage physically with on the technology.
Although disclose specific embodiments of the invention and accompanying drawing for the purpose of illustration, its purpose is to help to understand content of the present invention and implement according to this, but it will be appreciated by those skilled in the art that: without departing from the spirit and scope of the invention and the appended claims, various replacements, variation and modification all are possible.The present invention should not be limited to this specification most preferred embodiment and the disclosed content of accompanying drawing, and the scope of protection of present invention is as the criterion with the scope that claims define.
Claims (10)
1. realize the three-dimensional interconnection system between multisystem for one kind, comprise that data sampling keeps module, time-sequence control module, radio frequency interface module and multilayer communication system,
It is characterized in that every layer of communication system connects a data sampling and keep module and time-sequence control module, is deposited with transformer on the zone of every layer of communication system interconnection; Described data sampling keeps module to be connected by radio frequency interface module with transformer; Each layer communication system utilizes transformer to produce and the launching simulation signal; Described data sampling keeps module to receive analog signal, and analog signal is converted into the digital signal of described communication system identification and processing; Described time-sequence control module keeps module by opening or close above-mentioned data sampling, controls the communication sequential of different level communication systems, realizes the noncontact interconnection between the multilayer communication system.
2. a kind of three-dimensional interconnection system that realizes between multisystem as claimed in claim 1 is characterized in that described analog signal is silica-based millimeter wave.
3. a kind of three-dimensional interconnection system that realizes between multisystem as claimed in claim 1 is characterized in that described radio frequency interface module comprises low noise amplifier and frequency mixer.
4. a kind of three-dimensional interconnection system that realizes between multisystem as claimed in claim 1 is characterized in that, described data sampling keeps module to comprise analog to digital conversion circuit and power management module.
5. a kind of three-dimensional interconnection system that realizes between multisystem as claimed in claim 1 is characterized in that, the transformer adopting high resistant substrate of described every layer of interconnect area, the insulating material of transformer bay dielectric layer deposit low-k; Utilize the copper wiring technique of top-level metallic, form the thick metal spiral induction structure of transformer.
6. as claim 1 or 5 described a kind of three-dimensional interconnection systems that realize between multisystem, it is characterized in that a guard ring is arranged on the transformer of described every layer of interconnect area.
7. as claim 1 or 5 described a kind of three-dimensional interconnection systems that realize between multisystem, it is characterized in that, described transformer be shaped as circle or regular polygon, wire circle adopts 2 to 4 circles, live width adopts 2 to 6 microns, distance between centers of tracks is less than 2 microns.
8. a kind of three-dimensional interconnection system that realizes between multisystem as claimed in claim 5 is characterized in that, described superelevation resistance substrate is SOI or porous silicon substrate or suspension substrate.
9. a kind of three-dimensional interconnection system that realizes between multisystem as claimed in claim 5 is characterized in that, described advanced low-k materials is ferromagnetic-ferroelectric function material or ferromagnetic-partly lead functional material.
10. a kind of three-dimensional interconnection system that realizes between multisystem as claimed in claim 9, it is characterized in that, described ferromagnetic-ferroelectric function material is BiFeO3 and/or (Ba, Pb) (Ti, Zr) O3 based material, described ferromagnetic-partly to lead functional material be that europium-sulphur (Eu-S) is and/or europium-selenium (Eu-Se) based material.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101741408A (en) * | 2008-11-26 | 2010-06-16 | 宝定科技股份有限公司 | Wireless transceiver module |
| CN103975285A (en) * | 2011-12-15 | 2014-08-06 | 英特尔公司 | Implementing an inter-processor communication in a multi-core system using mmwave radios |
-
2008
- 2008-06-03 CN CN2008101144851A patent/CN101290922B/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101741408A (en) * | 2008-11-26 | 2010-06-16 | 宝定科技股份有限公司 | Wireless transceiver module |
| CN101741408B (en) * | 2008-11-26 | 2013-04-03 | 智邦科技股份有限公司 | Wireless transceiver module |
| CN103975285A (en) * | 2011-12-15 | 2014-08-06 | 英特尔公司 | Implementing an inter-processor communication in a multi-core system using mmwave radios |
| CN103975285B (en) * | 2011-12-15 | 2017-02-15 | 英特尔公司 | Implementing an inter-processor communication in a multi-core system using mmwave radios |
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| CN101290922B (en) | 2011-04-20 |
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