CN101239785B - Large screen thin film transistor die set thinning liquid and producing method thereof - Google Patents
Large screen thin film transistor die set thinning liquid and producing method thereof Download PDFInfo
- Publication number
- CN101239785B CN101239785B CN2008100207783A CN200810020778A CN101239785B CN 101239785 B CN101239785 B CN 101239785B CN 2008100207783 A CN2008100207783 A CN 2008100207783A CN 200810020778 A CN200810020778 A CN 200810020778A CN 101239785 B CN101239785 B CN 101239785B
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- Prior art keywords
- earth oxide
- rare earth
- suspension
- film transistor
- reducer
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- 239000007788 liquid Substances 0.000 title claims abstract description 12
- 239000010409 thin film Substances 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 title abstract 5
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims abstract description 54
- 229920000620 organic polymer Polymers 0.000 claims abstract description 9
- 150000007524 organic acids Chemical class 0.000 claims abstract description 8
- 239000000725 suspension Substances 0.000 claims description 38
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 20
- 238000002156 mixing Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 239000000654 additive Substances 0.000 claims description 8
- 230000000996 additive effect Effects 0.000 claims description 8
- -1 silicon aluminate Chemical class 0.000 claims description 6
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims description 5
- 229920002125 Sokalan® Polymers 0.000 claims description 5
- 150000001412 amines Chemical class 0.000 claims description 5
- 239000004584 polyacrylic acid Substances 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000010792 warming Methods 0.000 claims description 2
- ZZVUWRFHKOJYTH-UHFFFAOYSA-N diphenhydramine Chemical compound C=1C=CC=CC=1C(OCCN(C)C)C1=CC=CC=C1 ZZVUWRFHKOJYTH-UHFFFAOYSA-N 0.000 claims 1
- 239000003638 chemical reducing agent Substances 0.000 abstract description 19
- 239000011521 glass Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 20
- 235000019353 potassium silicate Nutrition 0.000 description 13
- 239000004111 Potassium silicate Substances 0.000 description 12
- NNHHDJVEYQHLHG-UHFFFAOYSA-N potassium silicate Chemical compound [K+].[K+].[O-][Si]([O-])=O NNHHDJVEYQHLHG-UHFFFAOYSA-N 0.000 description 12
- 229910052913 potassium silicate Inorganic materials 0.000 description 12
- 238000003756 stirring Methods 0.000 description 11
- 150000003014 phosphoric acid esters Chemical class 0.000 description 7
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 238000005303 weighing Methods 0.000 description 6
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 5
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
- PCHPORCSPXIHLZ-UHFFFAOYSA-N diphenhydramine hydrochloride Chemical compound [Cl-].C=1C=CC=CC=1C(OCC[NH+](C)C)C1=CC=CC=C1 PCHPORCSPXIHLZ-UHFFFAOYSA-N 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- ALYNCZNDIQEVRV-UHFFFAOYSA-N 4-aminobenzoic acid Chemical compound NC1=CC=C(C(O)=O)C=C1 ALYNCZNDIQEVRV-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Silicates, Zeolites, And Molecular Sieves (AREA)
- Silicon Compounds (AREA)
- Soil Conditioners And Soil-Stabilizing Materials (AREA)
Abstract
Description
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008100207783A CN101239785B (en) | 2008-02-26 | 2008-02-26 | Large screen thin film transistor die set thinning liquid and producing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008100207783A CN101239785B (en) | 2008-02-26 | 2008-02-26 | Large screen thin film transistor die set thinning liquid and producing method thereof |
Publications (2)
Publication Number | Publication Date |
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CN101239785A CN101239785A (en) | 2008-08-13 |
CN101239785B true CN101239785B (en) | 2010-11-17 |
Family
ID=39931676
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2008100207783A Active CN101239785B (en) | 2008-02-26 | 2008-02-26 | Large screen thin film transistor die set thinning liquid and producing method thereof |
Country Status (1)
Country | Link |
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CN (1) | CN101239785B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102627916B (en) * | 2012-03-23 | 2014-09-03 | 江苏中晶科技有限公司 | Glass polishing solution with reinforcement function |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4226623A (en) * | 1979-02-19 | 1980-10-07 | Fujimi Kenmazai Kogyo Co., Ltd. | Method for polishing a single crystal or gadolinium gallium garnet |
CN1288920A (en) * | 1999-09-21 | 2001-03-28 | 不二见株式会社 | Polishing composition |
CN1748009A (en) * | 2003-02-11 | 2006-03-15 | 卡伯特微电子公司 | Mixed-abrasive polishing composition and method for using the same |
CN1903962A (en) * | 2006-08-14 | 2007-01-31 | 北京蓝景创新科技有限公司 | Preparation method of super fine precision polishing powder using ceriumdioxide as main body and polishing powder |
CN1919949A (en) * | 2006-08-23 | 2007-02-28 | 孙韬 | High precision composite polishing liquid, preparation method and use thereof |
CN1919950A (en) * | 2006-08-23 | 2007-02-28 | 孙韬 | High precision polishing liquid, preparation method and use thereof |
-
2008
- 2008-02-26 CN CN2008100207783A patent/CN101239785B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4226623A (en) * | 1979-02-19 | 1980-10-07 | Fujimi Kenmazai Kogyo Co., Ltd. | Method for polishing a single crystal or gadolinium gallium garnet |
CN1288920A (en) * | 1999-09-21 | 2001-03-28 | 不二见株式会社 | Polishing composition |
CN1748009A (en) * | 2003-02-11 | 2006-03-15 | 卡伯特微电子公司 | Mixed-abrasive polishing composition and method for using the same |
CN1903962A (en) * | 2006-08-14 | 2007-01-31 | 北京蓝景创新科技有限公司 | Preparation method of super fine precision polishing powder using ceriumdioxide as main body and polishing powder |
CN1919949A (en) * | 2006-08-23 | 2007-02-28 | 孙韬 | High precision composite polishing liquid, preparation method and use thereof |
CN1919950A (en) * | 2006-08-23 | 2007-02-28 | 孙韬 | High precision polishing liquid, preparation method and use thereof |
Non-Patent Citations (2)
Title |
---|
JP特开2000-8025A 2000.01.11 |
JP特开2005-239546A 2005.09.08 |
Also Published As
Publication number | Publication date |
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CN101239785A (en) | 2008-08-13 |
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Owner name: JIANGSU SINO KRYSTALS OPTRONICS TECHNOLOGY CO., LT Free format text: FORMER OWNER: SUN TAO Effective date: 20110720 |
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Free format text: CORRECT: ADDRESS; FROM: 226600 JIANGSU CHERRICA MICROELECTRONIC NANOMATERIALS CO., LTD., NO. 8, DONGHU ROAD, DEVELOPMENT ZONE, HAI'AN COUNTY, JIANGSU PROVINCE TO: 213164 NO. 8, XIHU ROAD, WUJIN HIGH-TECH. INDUSTRIAL DEVELOPMENT ZONE, CHANGZHOU CITY, JIANGSU PROVINCE |
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Effective date of registration: 20110720 Address after: 213164 No. 8, West Lake Road, hi tech Industrial Development Zone, Changzhou, Jiangsu, Wujin Patentee after: Jiangsu MICROTEK Photoelectric Technology Co.,Ltd. Address before: 226600 East Lake Road, Haian County of Jiangsu Province Development Zone No. 8 Jiangsu Ji Ruika micro nano material Co Ltd Patentee before: Sun Tao |
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EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Jiangsu Sino Krystals Technology Co.,Ltd. Assignor: Jiangsu MICROTEK Photoelectric Technology Co.,Ltd. Contract record no.: 2012320000322 Denomination of invention: Large screen thin film transistor die set thinning liquid and producing method thereof Granted publication date: 20101117 License type: Exclusive License Open date: 20080813 Record date: 20120328 |
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Effective date of registration: 20221117 Address after: No. 18-69, Changwu Middle Road, Changzhou City, Jiangsu Province, 213000 Patentee after: Jiangsu Jicui Zhongyi Technology Industry Development Co.,Ltd. Address before: 213164 No.8 Xihu Road, Wujin high tech Industrial Development Zone, Changzhou City, Jiangsu Province Patentee before: Jiangsu MICROTEK Photoelectric Technology Co.,Ltd. |
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Effective date of registration: 20231220 Address after: No. 1-3 Haihu Road, Wujin High tech Industrial Development Zone, Changzhou City, Jiangsu Province, 213164 Patentee after: Jiangsu Wujin High tech Investment Holding Co.,Ltd. Address before: No. 18-69, Changwu Middle Road, Changzhou City, Jiangsu Province, 213000 Patentee before: Jiangsu Jicui Zhongyi Technology Industry Development Co.,Ltd. |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Production method of thinning solution for large screen thin-film transistor modules Effective date of registration: 20231229 Granted publication date: 20101117 Pledgee: Industrial and Commercial Bank of China Changzhou Wujin Branch Pledgor: Jiangsu Wujin High tech Investment Holding Co.,Ltd. Registration number: Y2023980075099 |
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