CN101215168B - Doping modifying method for lead magnesio-tantalate lead zirconate lead titanate - Google Patents
Doping modifying method for lead magnesio-tantalate lead zirconate lead titanate Download PDFInfo
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- CN101215168B CN101215168B CN2008100466913A CN200810046691A CN101215168B CN 101215168 B CN101215168 B CN 101215168B CN 2008100466913 A CN2008100466913 A CN 2008100466913A CN 200810046691 A CN200810046691 A CN 200810046691A CN 101215168 B CN101215168 B CN 101215168B
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- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 title claims description 13
- 238000000034 method Methods 0.000 title abstract 5
- 239000000919 ceramic Substances 0.000 claims abstract description 45
- 239000000843 powder Substances 0.000 claims abstract description 41
- 239000011230 binding agent Substances 0.000 claims abstract description 22
- 239000002994 raw material Substances 0.000 claims abstract description 14
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 12
- 229910052745 lead Inorganic materials 0.000 claims abstract description 6
- 238000005245 sintering Methods 0.000 claims abstract description 6
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 6
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 6
- 238000009413 insulation Methods 0.000 claims description 15
- 238000000498 ball milling Methods 0.000 claims description 10
- 238000002715 modification method Methods 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910018663 Mn O Inorganic materials 0.000 claims description 5
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- 238000010348 incorporation Methods 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- 238000010792 warming Methods 0.000 claims description 5
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 4
- 235000019353 potassium silicate Nutrition 0.000 claims description 3
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 abstract description 20
- 229910052451 lead zirconate titanate Inorganic materials 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 5
- 229910010293 ceramic material Inorganic materials 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract 4
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 abstract 4
- -1 MgTa2O6 Inorganic materials 0.000 abstract 2
- XMFOQHDPRMAJNU-UHFFFAOYSA-N lead(II,IV) oxide Inorganic materials O1[Pb]O[Pb]11O[Pb]O1 XMFOQHDPRMAJNU-UHFFFAOYSA-N 0.000 abstract 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 abstract 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract 1
- 239000011572 manganese Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 4
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- FOLMBQLGENFKLO-UHFFFAOYSA-N [Pb].[Mg].[Nb] Chemical compound [Pb].[Mg].[Nb] FOLMBQLGENFKLO-UHFFFAOYSA-N 0.000 description 1
- OOBNORVQFIAGPT-UHFFFAOYSA-N antimony manganese Chemical compound [Mn].[Sb] OOBNORVQFIAGPT-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000334 poly[3-(3'-N,N,N-triethylamino-1-propyloxy)-4-methylthiophene-2,5-diyl hydrochloride] polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 230000035924 thermogenesis Effects 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
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- Compositions Of Oxide Ceramics (AREA)
Abstract
The invention relates to a doping vario-property process for ceramic materials. The doping vario-property process of magnesium tantalic acid lead zirconate titanate is characterized in that the process comprises the steps as follows of 1) choosing MgO and Ta2O5 as the raw materials to synthesize MgTa2O6, 2) choosing Pb3O4, MgTa2O6, ZrO2 and TiO2 as row materials according to the mol ratio of Pb, Mg, Zr and Ti in the expression of (1-x-y)Pb(Mg1/3Ta2/3O3-yPbZrO3-xPbTiO3, wherein 0.3<=x<=0.5, 0.1<=y<=0.3, choosing Pb3O4, MgTa2O6, ZrO2 and TiO2 as the raw materials, preheating the raw materials 2hours at the temperature between 850DEG C-1050DEG C and obtaining the ceramic materials by ball grinding and drying the raw materials, 3) adding MnO2 and MnO2 in the ceramic powder, wherein the addedquality is 0.2-1.0% of the quality of the ceramic powder, and obtaining the impure ceramic powder after being ball grinded and dried, 4) add binding agent in the impure ceramic powder, wherein the added quality of the binding agent is 3% of the quality of the impure ceramic powder, sheeting and heat-insulating the impure ceramic powder for 2 hours at the temperature of 600DEG C, then, heating upto 1200-1300DEG C and sintering the impure ceramic powder after being heat insulated 1-3 hours to obtain ceramic pieces. The doping vario-property process can improve mechanical quality factor of theceramic materials and deduce loss.
Description
Technical field
The present invention relates to a kind of doping modification method of stupalith.
Background technology
So far the three component system of high power piezoelectric ceramic material is shown several comparatively sophisticated series: magnesium niobium lead zirconate titanate system, and its characteristics are high Kp, specific inductivity, Qm and stable preferably; Lead niobate zincate zirconate titanate system is characterized in more excellent stability, compactness, insulativity, piezoelectricity; Tellurium manganese Pb-based lanthanumdoped zirconate titanates system is characterized in that its piezoelectricity is subjected to the influence of mechanical stress and electrical load little.Antimony manganese Pb-based lanthanumdoped zirconate titanates system is characterized in that Kp and Qm are high, and resonant frequency is subjected to time and Temperature Influence little.And, often require the PZT pottery to have high specific inductivity, high Qm etc. for high-power.Yet in high-power applications, still can produce numerous problems, mainly contain: the drift of resonant frequency; The reduction of Qm; Reducing and the thermostability variation of the electromechanical coupling factor that heating brings.Thermogenesis wherein can be brought intensification, when temperature rises to certain value, will make the material depolarize, makes the piezoelectricity dielectric system of material lose effect fully.So the preparation hard material that dielectric loss is low, Qm is big is particularly paid attention in high power device.
Summary of the invention
The object of the present invention is to provide a kind of doping modification method of lead magnesio-tantalate lead zirconate lead titanate, this doping modification method can improve the mechanical quality factor of stupalith, reduces the wastage.
To achieve these goals, technical scheme of the present invention is: the doping modification method of lead magnesio-tantalate lead zirconate lead titanate is characterized in that it comprises the steps:
1) according to molecular formula MgTa
2O
6The mol ratio of middle Mg and Ta is chosen MgO and Ta
2O
5Raw material 800 ℃ of insulations 2 hours, rises to 1200 ℃ of insulations 4 hours then, and temperature rise rate is 3～5 ℃/min, synthetic MgTa
2O
6
2) be (1-x-y) Pb (Mg by expression formula
1/3Ta
2/3) O
3-yPbZrO
3-xPbTiO
3The mol ratio of middle Pb, Mg, Zr, Ti, wherein, Pb is chosen in 0.3≤x≤0.5,0.1≤y≤0.3
3O
4, MgTa
2O
6, ZrO
2And TiO
2Raw material, 850 ℃～1050 ℃ pre-burnings 2 hours, temperature rise rate was 3～5 ℃/min; The cooling back is medium ball milling 24 hours with alcohol, and oven dry makes ceramic powder, and { expression formula is (1-x-y) Pb (Mg
1/3Ta
2/3) O
3-yPbZrO
3-xPbTiO
3, i.e. lead magnesio-tantalate lead zirconate lead titanate powder };
3) ceramic powder doped with Mn O
2, MnO
2Incorporation be 0.2～1.0% of ceramic powder quality, ball milling 12 hours, oven dry obtains the doped ceramics powder;
4) add binding agent in the doped ceramics powder, the add-on of binding agent is 3% of a doped ceramics powder quality, mix, compressing tablet is in 600 ℃ of insulations 2 hours (binder removal is got rid of binding agent), be warming up to 1200～1300 ℃ then, temperature rise rate is 3～5 ℃/min, is incubated 1～3 hour sintering, obtains ceramic plate.
Described binding agent is polyvinyl alcohol or water glass.
The present invention has determined (1-x-y) Pb (Mg
1/3Ta
2/3) O
3-yPbZrO
3-xPbTiO
3(PMT-PZ-PT) accurate homotype phase boundary (optimum value x=0.4, the y=0.2 of sosoloid three parts and cubic phase composite; Value range 0.3≤x≤0.5,0.1≤y≤0.3), at accurate homotype phase boundary place it is carried out the manganese doping vario-property, the piezo-electric modulus that obtains forming is 500pC/N, mechanical quality factor Q m is 2000, and loss is 0.4%, and the product of mechanical quality factor Q m and piezoelectric constant is 1x10
6, apparently higher than other rigid PZT potteries.Can be used for the high-energy applications of ultrasound.
The invention has the beneficial effects as follows: can improve the mechanical quality factor of stupalith, reduce the wastage.
Embodiment
In order to understand the present invention better, further illustrate content of the present invention below in conjunction with embodiment, but content of the present invention not only is confined to the following examples.
Embodiment 1:
The doping modification method of lead magnesio-tantalate lead zirconate lead titanate, it comprises the steps:
1) according to molecular formula MgTa
2O
6The mol ratio of middle Mg and Ta is chosen MgO and Ta
2O
5Raw material 800 ℃ of insulations 2 hours, rises to 1200 ℃ of insulations 4 hours then, and temperature rise rate is 3～5 ℃/minute, synthetic MgTa
2O
6
2) be (1-x-y) Pb (Mg by expression formula
1/3Ta
2/3) O
3-yPbZrO
3-xPbTiO
3The mol ratio of middle Pb, Mg, Zr, Ti, wherein, x=0.4, y=0.2 chooses Pb
3O
4, MgTa
2O
6, ZrO
2And TiO
2Raw material, 1000 ℃ of pre-burnings 2 hours, temperature rise rate was 3～5 ℃/minute; The cooling back is medium ball milling 24 hours with alcohol, and oven dry (getting the phase composite of powdered sample tester) makes ceramic powder, and { expression formula is 0.4Pb (Mg
1/3Ta
2/3) O
3-0.2PbZrO
3-0.4PbTiO
3, i.e. lead magnesio-tantalate lead zirconate lead titanate powder };
3) ceramic powder doped with Mn O
2, MnO
2Incorporation be (0,0.2%, 0.5%, 0.8%, 1.0%, see Table 1) of ceramic powder quality, ball milling 12 hours, oven dry obtains the doped ceramics powder;
4) add binding agent (polyvinyl alcohol) in the doped ceramics powder, the add-on of binding agent is 3% of a doped ceramics powder quality, mix, compressing tablet is in 600 ℃ of insulations 2 hours (binder removal is got rid of binding agent), be warming up to 1280 ℃ then, temperature rise rate is 3～5 ℃/minute, is incubated 2 hours (sintering), obtains ceramic plate.
5 groups of ceramic plate samples that embodiment 1 obtains, last silver slurry, its electric property is tested in polarization (making alive 40kV/cm keeps 10min in room temperature silicone oil), sees Table 1.
Table 1, Mn doping 0.4Pb (Mg
1/3Ta
2/3) O
3-0.2PbZrO
3-0.4PbTiO
3And rigid PZT and PMNT ceramic dielectric and piezoelectric property:
| Sample | ε r (1kHz) | tgδ (1kHz) | d 33 (pC/N) | kp (％) | Q m | kt (％) | T c (℃) | T d (℃) | Pr (μC/cm 2) | Ps (μC/cm 2) | Ec (kV/cm) |
| Mn 0％(wt) | 4050 | 0.024 | 580 | 57 | 75 | 44 | 175 | -- | 27.3 | 39.3 | 6.5 |
| Mn 0.2％(wt) | 2700 | 0.004 | 530 | 62 | 700 | 49 | 175 | 162 | 28.7 | 38.0 | 6.8 |
| Mn 0.5％(wt) | 1710 | 0.004 | 500 | 58 | 2000 | 52 | 173 | 153 | 28.9 | 37.7 | 6.9 |
| Mn | 2120 | 0.008 | 420 | 52 | 2000 | 40 | 171 | 143 | 29.7 | 36.1 | 8.7 |
| 0.8％(wt) |
| Sample | ε r (1kHz) | tgδ (1kHz) | d 33 (pC/N) | kp (％) | Q m | kt (％) | T c (℃) | T d (℃) | Pr (μC/cm 2) | Ps (μC/cm 2) | Ec (kV/cm) |
| Mn 1％(wt) | 1310 | 0.012 | 350 | 50 | 1600 | 50 | 170 | -- | 24.8 | 31.9 | 9.3 |
| PZT4 | 1300 | 0.004 | 289 | 58 | 500 | 51 | 328 | -- | -- | -- | -- |
| PZT8 | 1000 | 0.004 | 225 | 51 | 1000 | 48 | 300 | -- | -- | -- | -- |
| PMN-P ZT | 3020 | -- | 351 | 52 | 1090 | 48 | 215 | -- | -- | -- | -- |
Embodiment 2:
The doping modification method of lead magnesio-tantalate lead zirconate lead titanate, it comprises the steps:
1) according to molecular formula MgTa
2O
6The mol ratio of middle Mg and Ta is chosen MgO and Ta
2O
5Raw material 800 ℃ of insulations 2 hours, rises to 1200 ℃ of insulations 4 hours then, and temperature rise rate is 3 ℃/min, synthetic MgTa
2O
6
2) be (1-x-y) Pb (Mg by expression formula
1/3Ta
2/3) O
3-yPbZrO
3-xPbTiO
3The mol ratio of middle Pb, Mg, Zr, Ti, wherein, x=0.3, y=0.1 chooses Pb
3O
4, MgTa
2O
6, ZrO
2And TiO
2Raw material, 850 ℃ of pre-burnings 2 hours, temperature rise rate was 3 ℃/min; The cooling back is medium ball milling 24 hours with alcohol, and oven dry makes ceramic powder, and { expression formula is 0.6Pb (Mg
1/3Ta
2/3) O
3-0.1PbZrO
3-0.3PbTiO
3, i.e. lead magnesio-tantalate lead zirconate lead titanate powder };
3) ceramic powder doped with Mn O
2, MnO
2Incorporation be 0.2% of ceramic powder quality, ball milling 12 hours, oven dry obtains the doped ceramics powder;
4) add binding agent (polyvinyl alcohol) in the doped ceramics powder, the add-on of binding agent is 3% of a doped ceramics powder quality, mix, compressing tablet is in 600 ℃ of insulations 2 hours (binder removal is got rid of binding agent), be warming up to 1200 ℃ then, temperature rise rate is 3 ℃/min, is incubated 1 hour (sintering), obtains ceramic plate.
Embodiment 3:
The doping modification method of lead magnesio-tantalate lead zirconate lead titanate, it comprises the steps:
1) according to molecular formula MgTa
2O
6The mol ratio of middle Mg and Ta is chosen MgO and Ta
2O
5Raw material 800 ℃ of insulations 2 hours, rises to 1200 ℃ of insulations 4 hours then, and temperature rise rate is 5 ℃/min, synthetic MgTa
2O
6
2) be (1-x-y) Pb (Mg by expression formula
1/3Ta
2/3) O
3-yPbZrO
3-xPbTiO
3The mol ratio of middle Pb, Mg, Zr, Ti, wherein, x=0.5, y=0.3 chooses Pb
3O
4, MgTa
2O
6, ZrO
2And TiO
2Raw material, 1050 ℃ of pre-burnings 2 hours, temperature rise rate was 5 ℃/min; The cooling back is medium ball milling 24 hours with alcohol, and oven dry makes ceramic powder, and { expression formula is 0.2Pb (Mg
1/3Ta
2/3) O
3-0.3PbZrO
3-0.5PbTiO
3, i.e. lead magnesio-tantalate lead zirconate lead titanate powder };
3) ceramic powder doped with Mn O
2, MnO
2Incorporation be 1.0% of ceramic powder quality, ball milling 12 hours, oven dry obtains the doped ceramics powder;
4) add binding agent (water glass) in the doped ceramics powder, the add-on of binding agent is 3% of a doped ceramics powder quality, mix, compressing tablet is in 600 ℃ of insulations 2 hours (binder removal is got rid of binding agent), be warming up to 1300 ℃ then, temperature rise rate is 5 ℃/min, is incubated 3 hours (sintering), obtains ceramic plate.
Claims (2)
1. the doping modification method of lead magnesio-tantalate lead zirconate lead titanate is characterized in that it comprises the steps:
1) according to molecular formula MgTa
2O
6The mol ratio of middle Mg and Ta is chosen MgO and Ta
2O
5Raw material 800 ℃ of insulations 2 hours, rises to 1200 ℃ of insulations 4 hours then, and temperature rise rate is 3～5 ℃/min, synthetic MgTa
2O
6
2) be (1-x-y) Pb (Mg by expression formula
1/3Ta
2/3) O
3-yPbZrO
3-xPbTiO
3The mol ratio of middle Pb, Mg, Zr, Ti, wherein, Pb is chosen in 0.3≤x≤0.5,0.1≤y≤0.3
3O
4, MgTa
2O
6, ZrO
2And TiO
2Raw material, 850 ℃～1050 ℃ pre-burnings 2 hours, temperature rise rate was 3～5 ℃/min; The cooling back is medium ball milling 24 hours with alcohol, and oven dry makes ceramic powder;
3) ceramic powder doped with Mn O
2, MnO
2Incorporation be 0.2～1.0% of ceramic powder quality, ball milling 12 hours, oven dry obtains the doped ceramics powder;
4) add binding agent in the doped ceramics powder, the add-on of binding agent is 3% of a doped ceramics powder quality, mixes, compressing tablet in 600 ℃ of insulations 2 hours, is warming up to 1200～1300 ℃ then, temperature rise rate is 3～5 ℃/min, is incubated 1～3 hour sintering, obtains ceramic plate.
2. the doping modification method of lead magnesio-tantalate lead zirconate lead titanate according to claim 1, it is characterized in that: described binding agent is polyvinyl alcohol or water glass.
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|---|---|---|---|
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| CN101215168B true CN101215168B (en) | 2010-06-02 |
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| CN101531512B (en) * | 2009-04-11 | 2011-11-30 | 桂林工学院 | Temperature stable type tungsten bronze structure dielectric ceramic and preparation method thereof |
| CN101538157B (en) * | 2009-04-11 | 2011-11-09 | 桂林工学院 | Tantalate microwave dielectric ceramic with high quality factor sintered at low temperature and preparation method thereof |
| CN101538160B (en) * | 2009-04-14 | 2011-11-09 | 桂林工学院 | Temperature-stable tantalate dielectric ceramic and preparation method thereof |
| CN108585852B (en) * | 2018-05-10 | 2021-04-20 | 哈尔滨工业大学 | Praseodymium-doped lead indium niobate magnesio-titanate luminescent piezoelectric ceramic, and preparation method and application thereof |
| CN109503163A (en) * | 2018-12-20 | 2019-03-22 | 中国科学院上海硅酸盐研究所 | One kind having ultrahigh Q-value tantalic acid magnesium media ceramic and preparation method thereof |
| CN114436652B (en) * | 2022-01-28 | 2023-05-16 | 厦门乃尔电子有限公司 | Lead zirconate titanate-lead niobium tantalum magnesium acid piezoelectric ceramic material and preparation method thereof |
| CN115894020B (en) * | 2022-12-23 | 2023-12-19 | 佛山仙湖实验室 | PMNZT-based piezoelectric ceramic with high piezoelectric coefficient and preparation method and application thereof |
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|---|---|---|---|---|
| EP0767151A1 (en) * | 1995-10-06 | 1997-04-09 | Murata Manufacturing Co., Ltd. | Piezoelectric ceramics and manufacturing method thereof |
| US5965057A (en) * | 1995-10-06 | 1999-10-12 | Murata Manufacturing Co., Ltd. | Piezoelectric ceramic and manufacturing method thereof |
| CN1442389A (en) * | 2003-04-11 | 2003-09-17 | 中国科学院上海硅酸盐研究所 | Low temperature sintering of zirconium enriched lead zirconate titanate ceramics |
| CN1803708A (en) * | 2006-01-19 | 2006-07-19 | 湖北大学 | Low temperature sintered PMMSN titanic acid piezoelectric ceramic material and preparation method thereof |
-
2008
- 2008-01-16 CN CN2008100466913A patent/CN101215168B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0767151A1 (en) * | 1995-10-06 | 1997-04-09 | Murata Manufacturing Co., Ltd. | Piezoelectric ceramics and manufacturing method thereof |
| US5965057A (en) * | 1995-10-06 | 1999-10-12 | Murata Manufacturing Co., Ltd. | Piezoelectric ceramic and manufacturing method thereof |
| CN1442389A (en) * | 2003-04-11 | 2003-09-17 | 中国科学院上海硅酸盐研究所 | Low temperature sintering of zirconium enriched lead zirconate titanate ceramics |
| CN1803708A (en) * | 2006-01-19 | 2006-07-19 | 湖北大学 | Low temperature sintered PMMSN titanic acid piezoelectric ceramic material and preparation method thereof |
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