CN101170076A - Method for manufacturing organic electroluminescent device and image display system - Google Patents

Abstract

A method for manufacturing an organic electroluminescent device comprises: providing a substrate, wherein the substrate comprises a first element area and a second element area; forming an amorphous silicon layer over the substrate; forming a protective film over a portion of the amorphous silicon layer in the second device region; performing excimer laser annealing process on the amorphous silicon layer to convert the amorphous silicon layer into a polycrystalline silicon layer; removing the protective film; and patterning the polysilicon layer to form a first patterned polysilicon layer in the first device region and a second patterned polysilicon layer in the second device region, wherein the grain size of the first patterned polysilicon layer is larger than that of the second patterned polysilicon layer, thereby forming the organic electroluminescent device.

Description

Manufacturing method of organic electroluminescent element and image display system

technical field

The invention relates to a manufacturing method of an electroluminescent element and an image display system using the electroluminescent element, and in particular to a manufacturing method of a thin film transistor and an image display system using the thin film transistor.

Background technique

Generally speaking, thin film transistors mainly include amorphous silicon thin film transistors and polysilicon thin film transistors. The array substrate of an existing electroluminescent device display (electroluminescent device display) can be divided into a light-emitting area and a circuit area, and the manufacturing method of the array substrate mainly includes: forming a thin film transistor (thin film transistor; TFT), forming a pixel electrode, and forming Organic Light Emitting Diodes. Wherein, the manufacturing process of the thin film transistor generally includes the following steps: forming a buffer layer, a polysilicon layer, a gate insulating layer, a gate, and an interlayer dielectric layer on the entire surface of the substrate. After the thin film transistor is completed, the pixel electrode is then formed, and the pixel electrode is electrically connected to the thin film transistor. Afterwards, a transparent anode, an organic light-emitting layer, and a reflective cathode are formed on the light-emitting area to complete the fabrication of the electroluminescent element. Usually, the polysilicon thin film transistor manufacturing process includes an excimer laser anneal (excimerlaser anneal; ELA) step to convert the amorphous silicon layer on the buffer layer into a polysilicon layer to form a polysilicon thin film transistor.

However, since thin film transistors (for example, driving TFTs) produced by the excimer laser annealing (excimer laser anneal; ELA) step have large electron mobility (mobility) variability, there will be As a result, the luminance of each sub-pixel is inconsistent, resulting in the defect of uneven color (Mura).

Therefore, the industry urgently needs an electroluminescent element that can solve the above-mentioned problems.

Contents of the invention

In view of the above problems, several preferred embodiments of the present invention improve the problem of excessive electrical differences between thin film transistors by adding a protection film. Moreover, by increasing the protective film, the aperture ratio can be increased by using a smaller channel length.

A preferred embodiment of the present invention provides a method for manufacturing an organic electroluminescent element, comprising: providing a substrate, the substrate including a first element region and a second element region; forming an amorphous silicon layer on the substrate; forming a protective film on the substrate above the portion of the amorphous silicon layer in the second element region; performing an excimer laser annealing process on the amorphous silicon layer to convert the amorphous silicon layer into a polysilicon layer; removing the protective film; and patterning the polysilicon layer , to form a first patterned polysilicon layer in the first element region, and form a second patterned polysilicon layer in the second element region, wherein the grain size of the first patterned polysilicon layer is larger than the second patterned polysilicon layer layer, thereby forming an organic electroluminescence element.

Another preferred embodiment of the present invention provides a method for manufacturing an organic electroluminescent element, comprising: providing a substrate, the substrate including a first element region and a second element region; forming a first and second patterned amorphous silicon layer on above the first and second element regions; forming a protective film above the second patterned amorphous silicon layer; and performing an excimer laser annealing process on the first and second patterned amorphous silicon layers, so that the first 1. The second patterned amorphous silicon layer is converted into the first and second patterned polysilicon layers, wherein the grain size of the first patterned polysilicon layer is larger than that of the second patterned polysilicon layer, thereby forming organic electroluminescence element.

Another preferred embodiment of the present invention provides a method for manufacturing an organic electroluminescent element, including: providing a substrate, the substrate including a first element region and a second element region; forming a patterned protective film on the second element region; forming an amorphous silicon layer over the substrate and the patterned protective film; performing an excimer laser annealing process on the amorphous silicon layer to convert the amorphous silicon layer into a polysilicon layer; and patterning the polysilicon layer to A first patterned polysilicon layer is formed in the first element region, and a second patterned polysilicon layer is formed in the second element region, wherein the grain size of the first patterned polysilicon layer is larger than that of the second patterned polysilicon layer, by This forms an organic electroluminescence element.

The present invention also provides an image display system, comprising: an organic electroluminescent element, including: a substrate with a pixel area above, wherein the pixel area includes a plurality of sub-pixels, and each sub-pixel includes: a switch area and a drive area; a switch thin film transistor placed in the switch area; and a drive thin film transistor placed in the drive area and at least including a gate, a polysilicon layer under the gate, and a patterned protective film under the polysilicon layer, wherein the pattern The protective film is a metal layer and is between the polysilicon layer and the substrate.

To sum up, the method of the preferred embodiment of the present invention can solve the problem of excessive electrical difference between thin film transistors, increase the aperture ratio, and will not increase the complexity of the process.

Description of drawings

FIG. 1 is an equivalent circuit diagram of a pixel in an active matrix organic electroluminescence device.

2a-2f are cross-sectional views illustrating a method for manufacturing an organic electroluminescence device in a preferred embodiment of the present invention.

3a-3f are cross-sectional views illustrating a method for manufacturing an organic electroluminescent device in another preferred embodiment of the present invention.

4a-4g are cross-sectional views illustrating a manufacturing method of an organic electroluminescence device in another preferred embodiment of the present invention.

5a-5g are cross-sectional views illustrating a method for manufacturing an organic electroluminescence device in another preferred embodiment of the present invention.

FIG. 6 is a diagram illustrating a system for displaying images in a preferred embodiment of the present invention.

simple notation

I～switching thin film transistor area; II～driving thin film transistor area; 100～pixel; 102～switching thin film transistor; 104～driving thin film transistor; 106～organic light emitting diode; 108～data line; 110～scanning line; 112～storage capacitor 200～substrate; 202～buffer layer; 204～amorphous silicon layer; 204a～polysilicon layer; 204b～polysilicon layer; 204c～channel region; 204d～source/drain; 'c～channel region; 204'd～lightly doped drain; 204'e～source/drain; 206～protective film; 208～excimer laser annealing process; 210～gate dielectric layer; 212～gate ; 214～gate; 216～interlayer dielectric layer; 218～wire; 220～protective layer; 224～transparent electrode; 300～substrate; 302～buffer layer; 304～amorphous silicon layer; 304a～patterned amorphous Silicon layer; 304b ~ patterned amorphous silicon layer; 304c ~ polysilicon layer; 304d ~ polysilicon layer; 304'a ~ channel region; 304'b ~ lightly doped drain; 304'c ~ source/drain; 304' d～channel area; 304'e～source/drain; 306～protective film; 308～excimer laser annealing process; 309～gate dielectric layer; 310～gate; 312～gate; 314～interlayer dielectric Electric layer; 316~wire; 318~protective layer; 322~transparent electrode; 400~substrate; 402~patterned protective film; 404~buffer layer; 406~amorphous silicon layer; 406a~polysilicon layer; 406c~channel area; 406'a~patterned polysilicon layer; 406'b~lightly doped drain; 406'c~source/drain; 406'd~channel region; 406b~patterned polysilicon layer; 406d~source/drain; 408 ～excimer laser annealing process; 410～gate dielectric layer; 412～gate; 414～gate; 416～interlayer dielectric layer; 418～wire; 420～protective layer; 424～transparent electrode; 500～substrate ; 502～patterned protective film; 504～buffer layer; 506～amorphous silicon layer; 506a～polysilicon layer; 506c～channel region; 506'a, 506b～patterned polysilicon layer; ; 506'c～source/drain; 506'd～channel area; 506b～patterned polysilicon layer; 506d～source/drain; 508～excimer laser annealing process; 510～gate dielectric layer; 512～gate 514～grid; 516～interlayer dielectric layer; 518～wire; 520～protective layer; 524～transparent electrode; 600～electronic component; 610～organic electroluminescence component; 620～display panel; 630～control device; 640～plane panel components; 650～input components; 2000～organic electroluminescent components; 3000～organic electroluminescent components; 4000～organic electroluminescent components.

Detailed ways

FIG. 1 is an equivalent circuit diagram of a pixel in an active matrix organic electroluminescence device. It is worth noting that each "pixel" referred to in the specification includes a switching thin film transistor (switching thin film transistor) and a driving thin film transistor (driving thin film transistor)

As shown in FIG. 1 , in a pixel region (not shown) including a plurality of pixels, a pixel 100 includes a switching TFT 102 , a driving TFT 104 , an OLED 106 , a data line 108 , a scanning line 110 and a storage capacitor 112 . The OLED 106 further includes an anode, an electroluminescent layer and a cathode (not shown). It should be noted that the switching thin film transistor 102 and the driving thin film transistor 104 are formed in the same pixel.

first embodiment

2a-2f are cross-sectional views illustrating a method for manufacturing an organic electroluminescence device in a preferred embodiment of the present invention.

As shown in FIG. 2a, on a substrate 200 including a first element region (for example, a switching thin film transistor (switchingthin film transistor) region I) and a second element region (for example, a driving thin film transistor (drivingthin film transistor) region II) in sequence A buffer layer 202 , an amorphous silicon layer 204 and a protective film 206 are formed. Wherein, the protection film 206 is formed on the part of the amorphous silicon layer 204 in the second element region II; and the protection film 206 includes a material based on silicon, such as silicon oxide (SiOx), silicon nitride (SiNx), Silicon oxynitride (SiOxNy), or a stacked structure of silicon oxide and silicon nitride.

As shown in Figure 2b, an excimer laser annealing process 208 is performed on the amorphous silicon layer 204 to convert the amorphous silicon layer into a polysilicon layer (204a, 204b); however, in the excimer laser annealing process 208, because the protection Part of the polysilicon layer 204 a and part of the polysilicon layer 204 b have different crystallization effects because the film 206 can reflect part of the laser energy. That is to say, since the part of the polysilicon layer 204b not covered by the protective film 206 is directly irradiated by the complete excimer laser energy, it has a larger grain size, and its electron mobility is about 100 cm ² / Vs. On the other hand, due to the part of the laser energy reflected by the protective film 206, the grain size of the underlying polysilicon layer 204a is smaller, but the grain uniformity (uniformity) is increased, and its electron mobility is approximately less than 100 cm ² /Vs .

As shown in FIG. 2c, the protection film 206 is removed. Next, as shown in FIG. 2d, the polysilicon layer (204a, 204b) is patterned to form the first active layer 204'b located in the switching thin film transistor region I and the second active layer 204a located in the driving thin film transistor region II. .

As shown in FIG. 2e , a gate dielectric layer 210 is formed to cover the patterned polysilicon layer and the buffer layer 202 such as the first active layer 204'b and the second active layer 204a.

Then, as shown in FIG. 2f, follow-up processes are performed sequentially to form gates (212, 214), interlayer dielectric layer 216, wire 218, cover layer 220, and transparent electrode (pixel electrode) 224, because this part is not The key points of the present invention are omitted here. Finally, the organic electroluminescent device 2000 is completed, including the switching thin film transistor and the driving thin film transistor. The switching thin film transistor includes a gate 212, a gate dielectric layer 210, and a first active layer 204'b; in addition, the driving thin film transistor includes a gate 214, a gate dielectric layer 210, and a second active layer 204a. Wherein, the first active layer 204'b includes a channel region 204'c, a lightly doped drain (lightly doped drain) 204'd, and a source/drain 204'e; the second active layer 204a includes a channel region 204c and source/drain 204d.

2nd embodiment

3a-3f are cross-sectional views illustrating a method for manufacturing an organic electroluminescent device in another preferred embodiment of the present invention.

As shown in FIG. 3a, a buffer layer 302 and an amorphous silicon layer 304 are sequentially formed on a substrate 300 including a switching thin film transistor region I and a driving thin film transistor region II.

As shown in FIG. 3 b , the amorphous silicon layer 304 is patterned to form a patterned amorphous silicon layer 304 b located in the switching TFT region I and a patterned amorphous silicon layer 304 a located in the driving TFT region II.

As shown in FIG. 3 c , a protective film 306 covering the surface of the patterned amorphous silicon layer 304 a and part of the buffer layer 302 is formed. The protective film 306 includes a silicon-based material, such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), or a stacked structure of silicon oxide and silicon nitride.

As shown in FIG. 3d, an excimer laser annealing process 308 is performed to convert the patterned amorphous silicon layers 304a and 304b into polysilicon layers 304c and 304d. Among them, the polysilicon layer 304d located in the switching thin film transistor region I is used as the first active layer of the subsequently formed switching thin film transistor, and the polysilicon layer 304c located in the driving thin film transistor region II is used as the second active layer of the subsequently formed driving thin film transistor. active layer. However, in the excimer laser annealing process 308 , because the protective film 306 can reflect part of the laser energy, the polysilicon layer 304 c and the polysilicon layer 304 d have different crystallization effects. In other words, since the polysilicon layer 304b not covered by the protective film 306 is directly irradiated with the full excimer laser energy, it has larger grains, and its electron mobility is about 100 cm ² /Vs . On the other hand, due to the part of the laser energy reflected by the protective film 306, the grain size of the underlying polysilicon layer 304c is smaller, but the grain uniformity (uniformity) is increased, and its electron mobility is approximately less than 100 cm ² /Vs .

As shown in FIG. 3 e , a gate dielectric layer 309 is formed to cover the patterned polysilicon layer such as the first active layer and the second active layer and the buffer layer 302 .

Next, as shown in FIG. 3f, subsequent processes are performed sequentially to form gates (310, 312), interlayer dielectric layers 314, wires 316, covering layers 318, and transparent electrodes (pixel electrodes) 322. Since this part is not The key points of the present invention are omitted here. Finally, the organic electroluminescent device 3000 is completed, including the switching thin film transistor and the driving thin film transistor. The switching thin film transistor includes a gate 310 , a gate dielectric layer 309 and a first active layer; in addition, the driving thin film transistor includes a gate 312 , a gate dielectric layer 309 and a second active layer. Wherein, the first active layer includes channel region 304'a, lightly doped drain (lightly doped drain) 304'b, source/drain 304'c; the second active layer includes channel region 304'd and source/drain Drain 304'e.

3rd embodiment

4a-4g are cross-sectional views illustrating a manufacturing method of an organic electroluminescence device in another preferred embodiment of the present invention.

As shown in FIG. 4a, a patterned protection film 402 is formed on a substrate 400 including a switching thin film transistor region I and a driving thin film transistor region II. The above-mentioned patterned protective film is located in the region II of the driving thin film transistor. The material of the patterned protection film 402 includes silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), or a stacked structure thereof.

As shown in FIG. 4 b , a buffer layer 404 is formed on the patterned protective film 402 and the substrate 400 . Next, an amorphous silicon layer 406 is formed on the buffer layer 404, as shown in FIG. 4c.

As shown in FIG. 4d, an excimer laser annealing process 408 is performed on the amorphous silicon layer 406 to convert the amorphous silicon layer 406 into a polysilicon layer (406a, 406b).

As shown in FIG. 4e, the polysilicon layers (406a, 406b) are patterned to form patterned polysilicon layers 406'a and 406b. Among them, the polysilicon layer 406'a located in the switching thin film transistor region I is used as the first active layer of the subsequently formed switching thin film transistor, and the polysilicon layer 406b located in the driving thin film transistor region II is used as the first active layer of the subsequently formed driving thin film transistor. second active layer. However, in the excimer laser annealing process 408 , because the patterned protective film 402 can reflect part of the laser energy, the patterned polysilicon layers 406 ′ a and 406 b have different crystallization effects. In other words, since the patterned polysilicon layer 406'a is directly irradiated by the excimer laser energy, it has larger grains, and its electron mobility is about 100 cm ² /Vs. On the other hand, since the patterned protective film 402 absorbs part of the laser energy, the grain size of the upper patterned polysilicon layer 406'a is smaller, but the grain uniformity (uniformity) is increased, and its electron mobility About less than 100cm ² /Vs.

As shown in FIG. 4f , a gate dielectric layer 410 is formed to cover the patterned polysilicon layer such as the first active layer and the second active layer and the buffer layer 402 .

Then, as shown in FIG. 4g, subsequent processes are performed sequentially to form gates (412, 414), interlayer dielectric layers 416, wires 418, covering layers 420, and transparent electrodes (pixel electrodes) 424. Since this part is not The key points of the present invention are omitted here. Finally, the organic electroluminescent device 4000 is completed, including the switching thin film transistor and the driving thin film transistor. The switching thin film transistor includes a gate 412 , a gate dielectric layer 410 and a first active layer; in addition, the driving thin film transistor includes a gate 414 , a gate dielectric layer 410 and a second active layer. Wherein, the first active layer includes channel region 406'd, lightly doped drain (lightly doped drain) 406'b, source/drain 406'c; the second active layer includes channel region 406c and source/drain 406d.

4th embodiment

5a-5g are cross-sectional views illustrating a method for manufacturing an organic electroluminescence device in another preferred embodiment of the present invention.

As shown in FIG. 5a, a patterned protective film 502 is formed on a substrate 500 including a switching thin film transistor region I and a driving thin film transistor region II. The above-mentioned patterned protective film is located in the region II of the driving thin film transistor. The above-mentioned patterned protection film 502 includes any metal material.

As shown in FIG. 5 b , a buffer layer 504 is formed on the patterned protective film 502 and the substrate 500 . Next, an amorphous silicon layer 506 is formed on the buffer layer 504, as shown in FIG. 5c.

As shown in FIG. 5d, an excimer laser annealing process 508 is performed on the amorphous silicon layer 506 to convert the amorphous silicon layer 506 into a polysilicon layer (506a, 506b).

As shown in FIG. 5e, the polysilicon layers (506a, 506b) are patterned to form patterned polysilicon layers 506'a and 506b. Among them, the polysilicon layer 506'a located in the switching thin film transistor region I is used as the first active layer of the subsequently formed switching thin film transistor, and the polysilicon layer 506b located in the driving thin film transistor region II is used as the first active layer of the subsequently formed driving thin film transistor. second active layer. However, in the excimer laser annealing process 508, because the patterned protection film 502 dissipates heat faster than other parts, the patterned polysilicon layers 506'a and 506b have different crystallization effects. In other words, since the patterned polysilicon layer 506'a is directly irradiated by the full excimer laser energy, it has larger grains with an electron mobility of about 100 cm ² /Vs. On the other hand, the patterned polysilicon layer 506'a above the patterned passivation film 502 has a smaller grain size but increased grain uniformity, and its electron mobility is less than about 100 cm ² /Vs.

As shown in FIG. 5 f , a gate dielectric layer 510 is formed to cover the patterned polysilicon layer such as the first active layer and the second active layer and the buffer layer 502 .

Next, as shown in FIG. 5g, subsequent processes are performed sequentially to form gates (512, 514), interlayer dielectric layers 516, wires 518, covering layers 520, and transparent electrodes (pixel electrodes) 524. Since this part is not The key points of the present invention are omitted here. Finally, the organic electroluminescent element 5000 is completed, including the switching thin film transistor and the driving thin film transistor. The switching thin film transistor includes a gate 512 , a gate dielectric layer 510 and a first active layer; in addition, the driving thin film transistor includes a gate 514 , a gate dielectric layer 510 and a second active layer. Wherein, the first active layer includes channel region 506'd, lightly doped drain (lightly doped drain) 506'b, source/drain 506'c; the second active layer includes channel region 506c and source/drain 506d.

FIG. 6 is a diagram illustrating a system for displaying images in a preferred embodiment of the present invention. Here, the system can be the display panel 620 , the flat panel component 640 or the electronic component 600 . The above-mentioned organic electroluminescent element can be assembled in a display panel to be made into an organic electroluminescent diode panel. As shown in FIG. 6 , the display panel 620 includes an organic electroluminescent device 610 , such as the organic electroluminescent devices 2000 , 3000 and 4000 shown in FIGS. 2 f , 3 f and 4 g respectively. In other embodiments, the planar panel element 640 may be composed of the display panel 620 and the controller 630 . In other embodiments, the display panel 620 may also constitute a part of many electronic components (for example, the electronic component 600 here). Generally speaking, the electronic component 600 may include a flat panel component 640 , and the flat panel component 640 has a display panel 620 , a controller 630 and an input component 650 . Moreover, the input element 650 is coupled to the planar panel element 640 and provides an input signal (eg, an image signal) to the display panel 620 to generate an image. The electronic component 600 may be a mobile phone, a digital camera, a personal digital assistant (personal digital assistant, PDA), a notebook computer, a desktop computer, a television, a car monitor, or a portable DVD player.

In summary, several preferred embodiments of the present invention use an excimer laser anneal (excimer laser anneal; ELA) step to add an additional protective film or metal film on or below the buffer layer, or on the gate insulating layer, resulting in The switching TFT and the driving TFT have different crystallization effects. As a result, the active-matrix organic electroluminescent element of the thin film transistor having the above-mentioned different crystallization effects will have a more uniform driving current, and avoid the defect of uneven color (Mura).

Claims (26)

1. the manufacture method of an organic electroluminescent element comprises:

Substrate is provided, and this substrate comprises the pixel region that contains a plurality of pixels, wherein comprises first element area and second element area in each pixel;

Form amorphous silicon layer in this substrate top;

Form this amorphous silicon layer top of the part of diaphragm in this second element area;

This amorphous silicon layer is carried out quasi-molecule laser annealing technology, to incite somebody to action

This amorphous silicon layer is converted into polysilicon layer; And

This polysilicon layer of pattern, to form the first patterned polysilicon layer at this first element area, and form the second patterned polysilicon layer at this second element area, wherein the crystallite dimension of this first patterned polysilicon layer forms organic electroluminescent element by this greater than this second patterned polysilicon layer.

2. the manufacture method of organic electroluminescent element as claimed in claim 1, wherein this diaphragm comprises with silicon being the material of base material.

3. the manufacture method of organic electroluminescent element as claimed in claim 1, wherein in this quasi-molecule laser annealing technology, this diaphragm is in order to the reflecting part laser energy.

4. the manufacture method of organic electroluminescent element as claimed in claim 1 also comprises:

After the step of this this polysilicon layer of pattern, form gate dielectric, to cover this patterned polysilicon layer.

5. the manufacture method of organic electroluminescent element as claimed in claim 1, the first patterned polysilicon layer that wherein is positioned at this first element area is first active layer, the second patterned polysilicon layer that is positioned at this second element area is second active layer.

6. the manufacture method of organic electroluminescent element as claimed in claim 1 wherein forms the switching thin-film transistor element, and forms the drive thin film transistors element in this second element area in this first element area.

7. the manufacture method at dynamo-electric exciting light element as claimed in claim 6 also comprises: Organic Light Emitting Diode, wherein this Organic Light Emitting Diode forms with this drive thin film transistors element and is electrically connected.

8. the manufacture method of organic electroluminescent element as claimed in claim 1 wherein removes this diaphragm after quasi-molecule laser annealing technology.

9. the manufacture method of organic electroluminescent element as claimed in claim 1 wherein forms first, second patterning amorphous silicon layer earlier above this first, second element area with this amorphous silicon layer pattern after the step above this amorphous silicon layer is formed at this substrate immediately.

10. the manufacture method of organic electroluminescent element as claimed in claim 9, wherein this diaphragm comprises with silicon being the material of base material.

11. the manufacture method of organic electroluminescent element as claimed in claim 9, wherein in this quasi-molecule laser annealing technology, this diaphragm can the reflecting part laser energy.

12. the manufacture method of organic electroluminescent element as claimed in claim 9 also comprises:

After this quasi-molecule laser annealing technology, form gate dielectric, cover polysilicon layer, substrate and this diaphragm that this not protected film covers.

13. the manufacture method of organic electroluminescent element as claimed in claim 9, wherein this first, second patterned polysilicon layer is respectively first active layer that is positioned at this first element area and second active layer that is positioned at this second element area.

14. the manufacture method of organic electroluminescent element as claimed in claim 9 wherein forms the switching thin-film transistor element, and forms the drive thin film transistors element in this second element area in this first element area.

15. the manufacture method of organic electroluminescent element as claimed in claim 14 also comprises:

Organic Light Emitting Diode, wherein this Organic Light Emitting Diode forms with this drive thin film transistors element and is electrically connected.

16. the manufacture method of an organic electroluminescent element comprises:

Substrate is provided, and this substrate comprises the pixel region that contains a plurality of pixels, wherein comprises first element area and second element area in each pixel;

Form the patterning diaphragm in this second element area top;

Form amorphous silicon layer in this substrate and this patterning diaphragm top;

This amorphous silicon layer is carried out quasi-molecule laser annealing technology so that this amorphous silicon layer is converted into polysilicon layer; And

This polysilicon layer of pattern, to form the first patterned polysilicon layer at this first element area, and form the second patterned polysilicon layer at this second element area, wherein the crystallite dimension of this first patterned polysilicon layer forms organic electroluminescent element by this greater than this second patterned polysilicon layer.

17. the manufacture method of organic electroluminescent element as claimed in claim 16, wherein this patterning diaphragm comprises metal material.

18. the manufacture method of organic electroluminescent element as claimed in claim 16, wherein in this quasi-molecule laser annealing technology, this patterning diaphragm has higher heat to pass coefficient.

19. the manufacture method of organic electroluminescent element as claimed in claim 16 also comprises:

After the step of this this polysilicon layer of pattern, form gate dielectric, to cover this patterned polysilicon layer and this substrate.

20. the manufacture method of organic electroluminescent element as claimed in claim 16, wherein this first, second patterned polysilicon layer is respectively first active layer that is positioned at this first element area and second active layer that is positioned at this second element area.

21. the manufacture method of organic electroluminescent element as claimed in claim 16 wherein forms the switching thin-film transistor element, and forms the drive thin film transistors element in this second element area in this first element area.

22. the manufacture method of organic electroluminescent element as claimed in claim 21 also comprises:

Organic Light Emitting Diode, wherein this Organic Light Emitting Diode forms with this drive thin film transistors element and is electrically connected.

23. an image display system comprises:

Organic electroluminescent element comprises:

The top has the substrate of pixel region, and wherein this pixel region comprises pixel a plurality of times, and each time pixel comprises:

Switch region and driving district;

Switching thin-film transistor places this switch region; And

Drive thin film transistors places this driving district, and comprises grid at least, is positioned at the polysilicon layer of this grid below and is positioned at the patterning diaphragm of this polysilicon layer below, and wherein this patterning diaphragm is a metal level and between this polysilicon layer and this substrate.

24. image display system as claimed in claim 23 also comprises display floater, wherein this organic electroluminescent element forms the part of this display floater.

25. image display system as claimed in claim 24 also comprises electronic component, wherein this electronic component comprises:

This display floater; And

Be coupled to the input unit of this display floater, and this input unit is in order to providing input signal to this display floater, thereby this display floater show image.

26. image display system as claimed in claim 25, wherein this electronic component is display or a portable digital versatile disc player on mobile phone, digital camera, personal digital assistant, notebook, desktop computer, TV, the car.

Images