CN101178549A - Method for removing photoresist layer and method for forming opening - Google Patents
Method for removing photoresist layer and method for forming opening Download PDFInfo
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- CN101178549A CN101178549A CNA200610143599XA CN200610143599A CN101178549A CN 101178549 A CN101178549 A CN 101178549A CN A200610143599X A CNA200610143599X A CN A200610143599XA CN 200610143599 A CN200610143599 A CN 200610143599A CN 101178549 A CN101178549 A CN 101178549A
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Abstract
The invention relates to a method for removing the photoresist layer, being suitable to a dielectric layer, wherein, a picture photoresist layer is arranged above the dielectric layer, while a metallic silicide layer is arranged below the dielectric layer; and a corrosion stopping layer is arranged between the dielectric layer and the metallic silicide layer. The method includes the steps as follows: the picture photoresist layer is used as a mask to remove partial dielectric layer; and an opening is arranged in the dielectric layer, wherein the part of the metallic silicide layer which is exposed from the opening is used as the corrosion stopping layer; and then the picture photoresist layer is removed through an oxygen-free plasma.
Description
Technical field
The present invention relates to a kind of semiconductor technology, relate in particular to a kind of method of photoresist layer and method that forms opening of removing.
Background technology
At metal-oxide semiconductor (MOS) (Metal Oxide Semiconductor, MOS) in the technology, come define pattern quite a lot of with the photoresist layer to carry out etched step, yet after finishing etching step, need remove photoresist layer as etching mask to carry out follow-up technology.
Existing photoengraving carving method, be to carry out being coated with last layer photoresist layer above the etched wafer desiring, to expose after photomask (Mask) covering with specific pattern, with the design transfer on the photomask to the photoresist layer, the photoresist layer of part is gone bad because of sensitization, get rid of the photoresist layer of desiring etching area afterwards, and be that mask carries out etching, again the photoresist layer is removed after etching finishes with the photoresist layer of not removing.Etching method is at present mostly with high-density plasma (High Density Plasma, HDP) carry out anisotropic etching, and in position on (In-Situ) high-density plasma etching machine, bombard facing to the photoresist layer with oxygen plasma, to remove the photoresist layer.But removing with high-density plasma in the process of photoresist layer, high-octane oxygen atom can penetrate the etch stop layer of dielectric layer below in the plasma, and then causes the metal silicide layer of etch stop layer below to produce oxidation.Therefore change the electrical performance of metal silicide layer, and then influence element operation usefulness.
Summary of the invention
The purpose of this invention is to provide a kind of method that removes the photoresist layer, can prevent terminating in the photoresist layer and remove in the process, the problem that bottom conductive layer is damaged produces.
Another purpose of the present invention provides a kind of formation method of opening, can safeguard the electrical performance of the conductive layer of dielectric layer below.
The present invention proposes a kind of method that removes the photoresist layer, be applicable to a dielectric layer, wherein there is a patterning photoresist layer top of this dielectric layer, and there is a metal silicide layer this dielectric layer below, and also has an etch stop layer between this dielectric layer and this metal silicide layer.The method comprises: with this patterning photoresist layer is mask, removes this dielectric layer of part, and to form an opening in this dielectric layer, wherein this opening exposes this etch stop layer of part on this metal silicide layer.Afterwards, remove this patterning photoresist layer with an oxygen-free plasmas.
According to the described method that removes the photoresist layer of embodiments of the invention, wherein this oxygen-free plasmas comprises that one contains hydrogen plasma.
According to the described method that removes the photoresist layer of embodiments of the invention, wherein this amounts of hydrogen that contains in the hydrogen plasma accounts for 4%～10% of total gas.
According to the described method that removes the photoresist layer of embodiments of the invention, wherein a vector gas of this oxygen-free plasmas comprises nitrogen.
According to the described method that removes the photoresist layer of embodiments of the invention, wherein a vector gas of this oxygen-free plasmas comprises inert gas.
According to the described method that removes the photoresist layer of embodiments of the invention, wherein the thickness of this exposed part etch stop layer is about 50～100 dusts.
According to the described method that removes the photoresist layer of embodiments of the invention, wherein the material of this etch stop layer comprises silicon nitride, fire sand, silicon oxynitride and silicon oxide carbide.
According to the described method that removes the photoresist layer of embodiments of the invention, wherein the material of this metal silicide layer comprises nickel silicon, titanizing silicon and cobalt silicon.
The present invention provides a kind of formation method of opening again.The method comprises: a substrate is provided, and there is a dielectric layer this substrate top, and wherein there is a conductive layer this dielectric layer below.Then, on this dielectric layer, form a patterning photoresist layer.Afterwards, be a mask with this patterning photoresist layer, carry out an anisotropic etching process, in this dielectric layer, to form a pre-opening, wherein this pre-opening be positioned at this conductive layer directly over, and this dielectric layer of bottom exposed part of this pre-opening.Contain hydrogen plasma with one and remove this patterning photoresist layer again.Opening this pre-opening becomes an opening, and wherein the bottom of this opening exposes this conductive layer of part.
According to the formation method of the described opening of embodiments of the invention, wherein this amounts of hydrogen that contains in the hydrogen plasma accounts for 4%～10% of total gas.
According to the formation method of the described opening of embodiments of the invention, wherein this vector gas that contains hydrogen plasma comprises nitrogen.
According to the formation method of the described opening of embodiments of the invention, wherein this vector gas that contains hydrogen plasma comprises inert gas.
According to the formation method of the described opening of embodiments of the invention, wherein the bottom of this pre-opening to the distance of the upper surface of this conductive layer is about 50～100 dusts.
According to the formation method of the described opening of embodiments of the invention, wherein the material of this conductive layer comprises nickel silicon, titanizing silicon, cobalt silicon, titanium nitride and polysilicon.
According to the formation method of the described opening of embodiments of the invention, wherein this opening comprises a contact window, an interlayer hole opening and a contact opening.
In the present invention, when etching dielectric layer, also can cause damage simultaneously, and reduce the resistance barrier ability of etch stop layer etch stop layer.Because, the present invention is after opening forms, when removing patterning photoresist layer, use oxygen-free plasmas/contain hydrogen plasma to carry out the photoresist layer and remove technology, so the conductive layer of open bottom below can not be subjected to the destruction of oxygen plasma and cause electrically being damaged of conductive layer.Therefore the electrical performance of conductive layer can be kept.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Figure 1A to Fig. 1 D illustrates the formation method into according to one preferred embodiment of the present invention a kind of opening;
Fig. 2 illustrates the diagrammatic sectional view into the contact window of another preferred embodiment according to the present invention;
It is the graph of a relation of quantity and etch-stop layer thickness that Fig. 3 illustrates.
The main element symbol description
100,200: substrate
102: conductive layer
104,104a: etch stop layer
106,106a, 204: dielectric layer
107: dielectric layer structure
108: patterning photoresist layer
110: anisotropic etching process
112: pre-opening
112a: bottom
114: the photoresist layer removes technology
116: opening
202: metal-oxide semiconductor (MOS)
202a: source/drain
206: contact window
Embodiment
Figure 1A to Fig. 1 D illustrates the formation method into according to one preferred embodiment of the present invention a kind of opening.Please refer to Figure 1A, a substrate 100 at first is provided, a conductive layer 102 is arranged in this substrate 100.The material of this conductive layer 102 for example is polysilicon or metal silicide.Wherein metal silicide comprises nickel silicon, titanizing silicon and cobalt silicon.In addition, conductor layer 102 also can be the titanium nitride layer.In addition, also be formed with a dielectric layer structure 107 in substrate 100, this dielectric layer structure 107 comprises a dielectric layer 106 and the etch stop layer 104 between dielectric layer 106 and substrate 100.Wherein the material of dielectric layer 106 for example is a monox.And the material of etch stop layer 104 for example is silicon nitride, fire sand, silicon oxynitride and silicon oxide carbide.Afterwards, form a patterning photoresist layer 108 on dielectric layer 106, this patterning photoresist layer 108 exposes the surface of part dielectric layer 106.
Please refer to Figure 1B, is mask with patterning photoresist layer 108, carries out an anisotropic etching process 110, becomes a pre-opening 112 to remove part dielectric layer structure 107, wherein the bottom 112a exposed part dielectric layer structure 107 of pre-opening 112.Just, remove the part dielectric layer 106 that patterning photoresist layer 108 is exposed, up to the bottom of pre-opening 112 112a exposed part etch stop layer 104, and the dielectric layer 106a that dielectric layer 106 is converted to have pre-opening 112, even partially-etched stop layer 104 is also etched removes, and this pre-opening 112 gos deep in the etch stop layer 104.It should be noted that this pre-opening 112 be positioned at conductive layer 102 directly over.In addition, the bottom 112a of this pre-opening 112 to the surface of conductive layer 102 apart from a, that is the thickness a of the etch stop layer 104 between pre-opening 112 bottom 112a and conductive layer 102 is about 50～100 dusts.
Please refer to Fig. 1 C, then carry out a photoresist layer and remove technology 114 to remove patterning photoresist layer 108.Wherein, the photoresist layer removes technology 114 and comprises and use an oxygen-free plasmas.And this oxygen-free plasmas for example is one to contain hydrogen plasma, and wherein amounts of hydrogen accounts for 4%～10% of total gas.In addition, the vector gas of this oxygen-free plasmas for example is nitrogen or inert gas, for example is helium, neon, argon gas etc.In addition, the photoresist layer remove technology 114 for example be about 200～300 degree Celsius in temperature, air pressure is about and carries out about 120 seconds under 500～1500mTorr.
Please refer to Fig. 1 D, remove after the patterning photoresist layer 108, open pre-opening 112 (shown in Fig. 1 C), to form an opening 116 in dielectric layer 106a and etch stop layer 104a, the bottom of this opening 116 exposes the surface of conductive layer 102.
Opening in the above-mentioned opening formation method for example is interlayer hole opening, contact opening or contact window (as shown in Figure 2).Just above-mentioned opening formation method can be applied in the manufacture method of capacitor, forms the contact opening.Or be applied in the manufacture method or the manufacture method of intraconnections of resistance, form the interlayer hole opening.Also or be applied in the manufacture method of metal-oxide semiconductor (MOS), form contact window (as the contact window 206 of Fig. 2).
Fig. 3 illustrates the graph of a relation into number of times and etch-stop layer thickness.As shown in Figure 3, remove with oxygen plasma in the process of photoresist layer, cover the dielectric layer structure of conductive layer top or the thickness of etch stop layer greater than 70 dusts when above, the oxygen atom of oxygen plasma can not penetrate dielectric layer structure or etch stop layer and reach conductive layer.Yet, when size of component more and more littler, the dielectric layer structure or the thickness of etch stop layer that cover conductive layer are more and more thinner, when dielectric layer structure or the thickness of etch stop layer during less than 70 dusts, oxygen atom in the oxygen plasma can penetrate dielectric layer structure or etch stop layer, and then conductive oxide layer, cause the electrical change of conductive layer, the electrical performance of infringement element.
In the present invention, because in the process that removes patterning photoresist layer 108, use oxygen-free plasmas, just contain hydrogen plasma, therefore the dielectric layer structure or the thickness of etch stop layer when the covering conductive layer is more and more littler, the damage of the conductive layer oxygen atom that also can not be penetrated of below, and cause the electrical change of conductive layer and then the usefulness of infringement element.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any those skilled in the art; under the premise without departing from the spirit and scope of the present invention; can do a little change and retouching, so protection scope of the present invention is as the criterion when looking the claims person of defining.
Claims (15)
1. method that removes the photoresist layer, be applicable to dielectric layer, wherein there is patterning photoresist layer the top of this dielectric layer, and there is metal silicide layer this dielectric layer below, and also have etch stop layer between this dielectric layer and this metal silicide layer, the method comprises:
With this patterning photoresist layer is mask, removes this dielectric layer of part, and to form opening in this dielectric layer, wherein this opening exposes this etch stop layer of part on this metal silicide layer; And
Remove this patterning photoresist layer with oxygen-free plasmas.
2. the method that removes the photoresist layer as claimed in claim 1, wherein this oxygen-free plasmas comprises and contains hydrogen plasma.
3. the method that removes the photoresist layer as claimed in claim 2, wherein this amounts of hydrogen that contains in the hydrogen plasma accounts for 4%～10% of total gas.
4. the method that removes the photoresist layer as claimed in claim 1, wherein the vector gas of this oxygen-free plasmas comprises nitrogen.
5. the method that removes the photoresist layer as claimed in claim 1, wherein the vector gas of this oxygen-free plasmas comprises inert gas.
6. the method that removes the photoresist layer as claimed in claim 1, wherein the thickness of this exposed part etch stop layer is about 50～100 dusts.
7. the method that removes the photoresist layer as claimed in claim 1, wherein the material of this etch stop layer comprises silicon nitride, fire sand, silicon oxynitride and silicon oxide carbide.
8. the method that removes the photoresist layer as claimed in claim 1, wherein the material of this metal silicide layer comprises nickel silicon, titanizing silicon and cobalt silicon.
9. the formation method of an opening, this method comprises:
Substrate is provided, and there is dielectric layer this substrate top, and wherein there is conductive layer this dielectric layer below;
On this dielectric layer, form patterning photoresist layer;
With this patterning photoresist layer is mask, carries out anisotropic etching process, in this dielectric layer, to form pre-opening, wherein this pre-opening be positioned at this conductive layer directly over, and this dielectric layer of bottom exposed part of this pre-opening;
Remove this patterning photoresist layer to contain hydrogen plasma; And
Opening this pre-opening becomes opening, and wherein the bottom of this opening exposes this conductive layer of part.
10. the formation method of opening as claimed in claim 9, wherein this amounts of hydrogen that contains in the hydrogen plasma accounts for 4%～10% of total gas.
11. the formation method of opening as claimed in claim 9, wherein this vector gas that contains hydrogen plasma comprises nitrogen.
12. the formation method of opening as claimed in claim 9, wherein this vector gas that contains hydrogen plasma comprises inert gas.
13. the formation method of opening as claimed in claim 9, wherein the bottom of this pre-opening to the distance of the upper surface of this conductive layer is about 50～100 dusts.
14. the formation method of opening as claimed in claim 9, wherein the material of this conductive layer comprises nickel silicon, titanizing silicon, cobalt silicon, polysilicon and titanium nitride.
15. the formation method of opening as claimed in claim 9, wherein this opening comprises contact window, interlayer hole opening and contact opening.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200610143599XA CN101178549A (en) | 2006-11-09 | 2006-11-09 | Method for removing photoresist layer and method for forming opening |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200610143599XA CN101178549A (en) | 2006-11-09 | 2006-11-09 | Method for removing photoresist layer and method for forming opening |
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| CN101178549A true CN101178549A (en) | 2008-05-14 |
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| CNA200610143599XA Pending CN101178549A (en) | 2006-11-09 | 2006-11-09 | Method for removing photoresist layer and method for forming opening |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101740497A (en) * | 2008-11-14 | 2010-06-16 | 联华电子股份有限公司 | Method for manufacturing microdisplay |
| CN103412423A (en) * | 2013-08-27 | 2013-11-27 | 江西合力泰科技股份有限公司 | Low temperature process for printing titanizing silicon |
| CN103928314A (en) * | 2014-04-22 | 2014-07-16 | 上海华力微电子有限公司 | Manufacturing method of self-alignment double-layer pattern without loads at bottom |
| CN108538838A (en) * | 2017-03-01 | 2018-09-14 | 联华电子股份有限公司 | The method for making semiconductor element |
-
2006
- 2006-11-09 CN CNA200610143599XA patent/CN101178549A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101740497A (en) * | 2008-11-14 | 2010-06-16 | 联华电子股份有限公司 | Method for manufacturing microdisplay |
| CN103412423A (en) * | 2013-08-27 | 2013-11-27 | 江西合力泰科技股份有限公司 | Low temperature process for printing titanizing silicon |
| CN103412423B (en) * | 2013-08-27 | 2016-05-11 | 江西合力泰科技有限公司 | A kind of technique of low temperature printing titanizing silicon |
| CN103928314A (en) * | 2014-04-22 | 2014-07-16 | 上海华力微电子有限公司 | Manufacturing method of self-alignment double-layer pattern without loads at bottom |
| CN103928314B (en) * | 2014-04-22 | 2017-06-06 | 上海华力微电子有限公司 | A kind of preparation method of the non-loaded autoregistration bilayer figure in bottom |
| CN108538838A (en) * | 2017-03-01 | 2018-09-14 | 联华电子股份有限公司 | The method for making semiconductor element |
| CN108538838B (en) * | 2017-03-01 | 2019-11-26 | 联华电子股份有限公司 | The method for making semiconductor element |
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Open date: 20080514 |